Zn,Cd掺杂AlN电子结构的第一性原理计算

董玉成; 郭志友; 毕艳军; 林 竹

doi:null

您当前的位置：

首页 >

文章列表页 >

Zn,Cd掺杂AlN电子结构的第一性原理计算

论文 | 更新时间：2020-08-12

- Zn,Cd掺杂AlN电子结构的第一性原理计算
- First-principles Calculation of AlN Electronic Structure by Doping with Zn and Cd
- 发光学报 2009年30卷第3期页码：314-320
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O471.5
- 收稿日期：2008-06-30，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-06-30，
  
  纸质出版日期：2009-06-30
- 稿件说明：
移动端阅览
董玉成, 郭志友, 毕艳军, 等. Zn,Cd掺杂AlN电子结构的第一性原理计算[J]. 发光学报, 2009,30(3):314-320.

DONG Yu-cheng, GUO Zhi-you, BI Yan-jun, et al. First-principles Calculation of AlN Electronic Structure by Doping with Zn and Cd[J]. Chinese journal of luminescence, 2009, 30(3): 314-320.
董玉成, 郭志友, 毕艳军, 等. Zn,Cd掺杂AlN电子结构的第一性原理计算[J]. 发光学报, 2009,30(3):314-320. DOI：

DONG Yu-cheng, GUO Zhi-you, BI Yan-jun, et al. First-principles Calculation of AlN Electronic Structure by Doping with Zn and Cd[J]. Chinese journal of luminescence, 2009, 30(3): 314-320. DOI：

摘要

基于密度泛函理论(DFT)框架下的第一性原理的平面波超软赝势方法(USPP)

对Zn

Cd掺杂AlN的32原子超原胞体系进行了几何结构优化

从理论上给出了掺杂和非掺杂体系的晶体结构参数。计算了掺杂AlN晶体的结合能、电子态密度、差分电荷密度

并对计算结果进行了细致的分析。计算结果表明

Cd、Zn都可以提供很多的空穴态

是良好的p型掺杂剂

但是相对于Cd

Zn原子在AlN晶体中的溶解度更大

并且可以提供更多的空穴

有利于形成更好的p型电导。

Abstract

AlN is a new type of direct wide bandgap Ⅲ-V nitride semiconductor material.Because the AlN possesses of many interesting physics characteristics

it has attracted huge attention on potential applications. In addition

AlN is a type of direct bandgap semiconductor material with a very wide direct bandgap of 6.2 eV

as solid-state light sources

which are in the process of profoundly changing the way that human generates light for general lighting applications. Solid-state light sources possess of two highly desirable features

which set them apart from most other light sources: (i) they have the potential to create light with essentially unit power efficiency and (ii) the properties of light can be controlled to a degree.In another actual application

AlN as a kind of high-efficiency ultraviolet solid-state light sources is greatly important material to develop short wavelength ultraviolet light-emitting diodes. Microelectronic fabrication technologies and the enviromental sciences both require light source with shorter emission wavelengths

such as the former to imporve resolution in photolithography and the latter for sensors that can instantaneously detect hazardous particles. Furthermore

ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage

biomedical research

water and air purification

and sterilization.In recent years

the great importance of semiconductor material has been realized in the fabrication of the shoter emission wavelength light-emitting diodes

resulting in research on AlN thin film. At present

resear-chers have completed Si doped AlN n-type conduction with very strong conductivity. Lately

Nepal

et al.

made use of Zn doping to obtain p-type AlN.However

the efficiency of doping is quite low

the p-type AIN possesses of lower quantum energy

and the acceptor compositions need to be detected further.In this paper

we studied the efficiency of Zn and Cd as p-type doping in wurtzite AlN crystals. In the present study we performed the geometrical structure of Zn and Cd doped 32 atoms supercell of AlN

which is optimized by adopting the ultra-soft pseudopotential method of total-energy plan wave based on the destiny functional theory(DFT). Cell parameters of both undoped and doped cells were calculated theoretically. Binding energy

partial destiny of state and electron destiny differences of doped AlN crystals were calculated and discussed in detail. We focus our attention on whether the doping can provide enough holes in doped AlN crystals. The result of our calculation revealed the fact that both Cd and Zn atoms can provide a good deal of the state holes

which means that both of them are well p-type doping

nevertheless

comparing with Cd

Zn has a better solubility in AlN crystals

because Zn in AlN crystals can provide more the state of hole

which is propitious to come into being better p-type conduction. We prove that Zn is a better p-type doping ion than Cd.

关键词

Keywords

references

. Li J, Nam K B, Nakarmi M L, et al. Band structure and functional optical transitions in wurtzite AlN [J]. Appl. Phys. Lett., 2003, 83 (25):5163-5165.

. Liu Yansong, Wang Lianwei, Huang Jipo, et al. Growth of AlN thin film with ZnO buffer layer [J]. Piezoelectrics & Acoustooptics (压电与声光), 2000, 22 (5):322-325 (in Chinese).

. Raghavan S, Redwing J M. In situ stress measurements during the MOCVD growth of AlN buffer layers on (111)Si substrates [J]. J. Cryst. Growth, 2004, 261 (2-3):294-300.

. Gong J R, Yeh M F, Wang C L. Growth and characterization of GaN and AlN films on (111) Si substrates [J]. J. Cryst. Growth, 2003, 247 (3-4):261-268.

. Taniysu Y, Kasu M, Makimoto T. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (＞100 cm2·V-1·s-1 ) [J]. Appl. Phys. Lett., 2004, 85 (20):4672-4674.

. Han J, Crawford M H, Shui R J, et al. AlGaN/GaN quantum well ultraviolet light emitting diodes [J]. Appl. Phys. Lett., 1998, 73 (12):1688-1690.

. Schubert E F, Kim J K. Solid-state light sources getting smart [J]. Science, 2005, 308 (5726):1274-1278.

. Taniysu Y, Kasu M, Makimoto T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres [J]. Nature, 2006, 441 (7091):325-328.

. Taniysu Y, Kasu M, Kobayashi N. Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN(0.42＜x<1) [J]. Appl. Phys. Lett., 2002, 81 (7):1255-1257.

. Nepal N, Nakarmi M L, Jang H U, et al. Growth and photoluminescence studies of Zn-doped AlN epilayers [J]. Appl. Phys. Lett., 2006, 89 (19):192111-1-3.

. Tan Changlong, Cai Wei, Tian Xiaohua. First-principles study on the effect of Hf content on martensitic transformation temperature of TiNiHf alloy [J]. Chin. Phys., 2006, 15 (11):2718-2723.

. Bi Yanjun, Guo Zhiyou, Liu Zhu, et al. First-principle research on feromagnetism of (Co,Mn)-Codoped ZnO[J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1031-1035 (in Chinese).

. Ishihara M, Li S J, Yumoto H, et al. Characterization of cementite films prepared by electron-shower-assisted PVD method [J]. Thin Solid Films, 1998, 316 (1-2):100-104.

. Segall M D, Lindan P, Probet M J, et al. First-principles simulation: ideas, illustrations and the CASTEP code [J]. J. Phys.: Condens.Matter, 2002, 14 (11):2717-2744.

. Vanderbilt D. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism [J]. Phys. Rev. B, 1990, 41 (11):7892-7895.

. Perdew J, Burke K, Ernzerhof M. Generalized gradient approximation made simple [J]. Phys. Rev. Lett., 1996, 77 (18):3865-3868.

. Monkhorst H J, Pack J D. Special points for brillouin-zone integrations [J]. Phys. Rev. B, 1976, 13 (12):5188-5192.

. Fischer T H, Almlof J. General methods for geometry and wave function optimization [J]. J. Phys.Chem., 1992, 96 (24):9768-9744.

. Miwa K, Fukumoto A. First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride [J]. Phys. Rev. B, 1993, 48 (11):7897-7902.

. Suzuki M, Uenoyama T. Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers [J]. J. Appl. Phys., 80 (12):6868-6874.

. Ma G M Ar, Armando R S, Miguel A B. Ab initio determination of the electronic structure of beryllium-,aluminum-,and magnesium-nitrides: A comparative study [J]. Phys. Rev. B, 2000, 62 (8):4890-4898.

. Stampfl C, Van de Walle C G. Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation [J]. Phys. Rev. B, 1999, 59 (8):5521-5535.

浏览量

270

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

CuI晶体及其缺陷态电子结构的模拟

p型MgZnOS透明导电薄膜及其p-n结型自驱动紫外光电探测器研究

超小尺寸银团簇：类分子结构模拟与吸收光谱计算

1.55 μm高功率单横模半导体激光器的研制

β⁃Ga₂O₃的p型掺杂研究进展