基片温度对PLD制备ZnO薄膜光学常数的影响

于永强; 梁 齐; 马渊明; 仇旭升; 章 伟; 揭建胜

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基片温度对PLD制备ZnO薄膜光学常数的影响

论文 | 更新时间：2020-08-12

- 基片温度对PLD制备ZnO薄膜光学常数的影响
- Influence of Substrate Temperature on the Optical Constants of ZnO Thin Film Grown by PLD
- 发光学报 2009年30卷第3期页码：297-303
- 作者机构：
  
  合肥工业大学应用物理系
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3
- 收稿：2008-09-10，
  
  修回：1900-1-2，
  
  网络首发：2009-06-30，
  
  纸质出版：2009-06-30
- 稿件说明：
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于永强, 梁齐, 马渊明, 等. 基片温度对PLD制备ZnO薄膜光学常数的影响[J]. 发光学报, 2009,30(3):297-303.

YU Yong-qiang, LIANG Qi, MA Yuan-ming, et al. Influence of Substrate Temperature on the Optical Constants of ZnO Thin Film Grown by PLD[J]. Chinese Journal of Luminescence, 2009, 30(3): 297-303.
于永强, 梁齐, 马渊明, 等. 基片温度对PLD制备ZnO薄膜光学常数的影响[J]. 发光学报, 2009,30(3):297-303. DOI：

YU Yong-qiang, LIANG Qi, MA Yuan-ming, et al. Influence of Substrate Temperature on the Optical Constants of ZnO Thin Film Grown by PLD[J]. Chinese Journal of Luminescence, 2009, 30(3): 297-303. DOI：

摘要

光谱椭偏仪被用来研究用脉冲激光沉积方法在Si(100)基片上

温度分别为400

500

600

700 ℃制备的ZnO薄膜的特性。利用三层Cauchy散射模型拟合椭偏参数

计算了每个温度下制备的ZnO薄膜在400~800 nm波长范围内的折射率(

)和消光系数(

)。发现基片温度对光学常数有很大的影响。通过分析XRD表征的晶体结构和 AFM表征的薄膜表面形貌

发现折射率的变化归因于薄膜堆积密度的变化。为了获得具有较好的光学和薄膜质量的ZnO薄膜

相比与其他沉积温度600 ℃或许是最佳的沉积温度。

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references

. Kang H S, Kand J S, Kim J W, et al. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films [J]. J. Appl. Phys., 2004, 95 (3):1264-1250.

. Ohta H, Kawamura K, Orita M, et al. Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO [J]. Appl. Phys. Lett., 2002, 77 (4):475-477.

. Wang X J, Buyanova I A, Chen W M, et al. Optical characterization studies of grown-in defects in ZnO epilayers grown by molecular beam epitaxy [J]. Phys. B: Condensed Matter, 2007, 401-402 :413-416.

. Sun Jianwu, Lu Youming, Liu Yichun, et al. Hole scattering mechanisms in nitrogen-doped p-type ZnO films grown by plasma assisted molecular beam epitaxy [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):437-440 (in Chinese).

. Shou Y K, Wei C C, Chin P C. Investigation of annealing-treatment on the optical and electrical properties of sol-gel-derived zinc oxide thin films [J]. Superlattices and Microstrutures, 2006, 39 (1-4):162-170.

. Sato Y, Sato S. Preparation and some properties of nitrogen-mixed ZnO thin films [J]. Thin Solid Films, 1996, 281-282 :445-458.

. Wen Jun, Chen Changle. Structural and photoluminescence properties of N-doped ZnO thin films grown by RF magnetron sputtering [J]. Chin. J. Lumin. (发光学报), 2008, 29 (5):856-860 (in Chinese).

. Sun X W, Kwok H S. Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition [J]. J. Appl. Phys., 1999, 86 (1):408-411.

. Ye Zhigao, Zhu Liping, Peng Yingzi, et al. Fabrication and magnetic properties of Co-doped ZnO thin films by pulsed laser deposition [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):486-490 (in Chinese).

. Grola R C, Wmanetogly N W, Liang S, et al. Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011 2) sapphire by metalorganic chemical vapor deposition [J]. J. Appl. Phys., 1999, 85 (5):2595-2602.

. Li Xiangping, Zhang Baolin, Dong Xin, et al. Study on the properties of ZnO films prepared by photo-assisted MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):139-143 (in Chinese).

. Liu Xuedong, Gu Shulin, Li Feng, et al. The effect of carrier gas H2 used during MOCVD-growth on the properties of N-doped ZnO [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):441-446 (in Chinese).

. Gioffre M, Angeloni M, Gagliardi M, et al. The influence of oxygen on the optical properties of RF-sputtered zinc oxide thin films [J]. Supperlattics and Mirostructures, 2007, 42 (1-6):85-88.

. Shan F K, Liu G X, Lee W J, et al. Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition [J]. J. Cryst. Growth, 2005, 277 (1-4):284-292.

. Zhang J P, He G, Zhu L Q, et al. Effect of oxygen partial pressure on the structural and optical properties of ZnO film deposited by reactive sputtering [J]. Appl. Surf. Sci., 2007, 253 (24):9414-9421.

. Miao L, Tanemura S, Tanemura M, et al. Thickness-dependent optical properties of ZnO thin films [J]. J. Mater. Sci.: Mater. Electron., 2007, 18 :S343-S346.

. Liu Y C, Hsieh J H, Tung S K. Extraction of optical constants of zinc oxide thin films by ellipsomerty with various models [J]. Thin Solid Films, 2006, 510 (1-2):32-38.

. Herzinger C, Snyder P, Johs B, et al. InP optical constants between 0.75 and 5.0 eV determined by variable-angle spectroscopic ellipsometry [J]. J. Appl. Phys., 1995, 77 (4):1715-1724.

. Tan S T, Chen B J, Sun X W, et al. Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition [J]. J. Appl. Phys., 2005, 98 (1):013505-1-5.

. Mohamed S H, Abd El-Rahman A M, Salem A M, et al. Effect of rf plasma nitriding time on electrical and optical properties of ZnO thin films [J]. J. Phys. Chem. Solids, 2006, 67 (11):2351-2357.

. Senadim E, Tü Zemen, Kavak H, et al. Influence of oxygen pressure of ZnO/glass substrate produced by plused filtered cathodic vacuum arc deposition [J]. Phys. B: Condensed Matter, 2007, 390 (1-2):366-372.

. Liu Z W, Ong C K. Synthesis and size control of ZnO nanorods by conventional pulsed-laser deposition without catalyst [J]. Mater. Lett., 2007, 61 (16):3329-3333.

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