基片温度对PLD制备ZnO薄膜光学常数的影响

于永强; 梁 齐; 马渊明; 仇旭升; 章 伟; 揭建胜

doi:null

您当前的位置：

首页 >

文章列表页 >

基片温度对PLD制备ZnO薄膜光学常数的影响

论文 | 更新时间：2020-08-12

- 基片温度对PLD制备ZnO薄膜光学常数的影响
- Influence of Substrate Temperature on the Optical Constants of ZnO Thin Film Grown by PLD
- 发光学报 2009年30卷第3期页码：297-303
- 作者机构：
  
  合肥工业大学应用物理系,安徽合肥,230009
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3
- 收稿日期：2008-09-10，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-06-30，
  
  纸质出版日期：2009-06-30
- 稿件说明：
移动端阅览
于永强, 梁齐, 马渊明, 等. 基片温度对PLD制备ZnO薄膜光学常数的影响[J]. 发光学报, 2009,30(3):297-303.

YU Yong-qiang, LIANG Qi, MA Yuan-ming, et al. Influence of Substrate Temperature on the Optical Constants of ZnO Thin Film Grown by PLD[J]. Chinese journal of luminescence, 2009, 30(3): 297-303.
于永强, 梁齐, 马渊明, 等. 基片温度对PLD制备ZnO薄膜光学常数的影响[J]. 发光学报, 2009,30(3):297-303. DOI：

YU Yong-qiang, LIANG Qi, MA Yuan-ming, et al. Influence of Substrate Temperature on the Optical Constants of ZnO Thin Film Grown by PLD[J]. Chinese journal of luminescence, 2009, 30(3): 297-303. DOI：

摘要

光谱椭偏仪被用来研究用脉冲激光沉积方法在Si(100)基片上

温度分别为400

500

600

700 ℃制备的ZnO薄膜的特性。利用三层Cauchy散射模型拟合椭偏参数

计算了每个温度下制备的ZnO薄膜在400~800 nm波长范围内的折射率(

)和消光系数(

)。发现基片温度对光学常数有很大的影响。通过分析XRD表征的晶体结构和 AFM表征的薄膜表面形貌

发现折射率的变化归因于薄膜堆积密度的变化。为了获得具有较好的光学和薄膜质量的ZnO薄膜

相比与其他沉积温度600 ℃或许是最佳的沉积温度。

Abstract

Spectroscopic ellipsometry(SE) was employed to characterize ZnO thin films prepared by pulsed laser deposition (PLD) on Si (100) substrates at various temperature of 400

500

600 and 700 ℃. The refractive indices (

) and extinction coefficients (

) of the ZnO films were calculated in the spectral range of 400~800 nm for each deposition temperature by fitting the ellipsometic parameters based on a three-layers dispersion with Cauchy model. It was found that the optical constants were significantly affected by the substrate temperature. Through analyzing the crystalline structures and surface morphologies of ZnO thin films grown at different substrate temperature by XRD and atomic force microscopy (AFM)

respectively

the variation of the refractive index can be attributed to the changes of the packing density of the thin film. After comparing the results obtained at different grown temperature

it was suggested 600 ℃ might be the optimum deposition temperature for growing dense ZnO films with high optical and crystalline quality.

关键词

Keywords

references

. Kang H S, Kand J S, Kim J W, et al. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films [J]. J. Appl. Phys., 2004, 95 (3):1264-1250.

. Ohta H, Kawamura K, Orita M, et al. Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO [J]. Appl. Phys. Lett., 2002, 77 (4):475-477.

. Wang X J, Buyanova I A, Chen W M, et al. Optical characterization studies of grown-in defects in ZnO epilayers grown by molecular beam epitaxy [J]. Phys. B: Condensed Matter, 2007, 401-402 :413-416.

. Sun Jianwu, Lu Youming, Liu Yichun, et al. Hole scattering mechanisms in nitrogen-doped p-type ZnO films grown by plasma assisted molecular beam epitaxy [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):437-440 (in Chinese).

. Shou Y K, Wei C C, Chin P C. Investigation of annealing-treatment on the optical and electrical properties of sol-gel-derived zinc oxide thin films [J]. Superlattices and Microstrutures, 2006, 39 (1-4):162-170.

. Sato Y, Sato S. Preparation and some properties of nitrogen-mixed ZnO thin films [J]. Thin Solid Films, 1996, 281-282 :445-458.

. Wen Jun, Chen Changle. Structural and photoluminescence properties of N-doped ZnO thin films grown by RF magnetron sputtering [J]. Chin. J. Lumin. (发光学报), 2008, 29 (5):856-860 (in Chinese).

. Sun X W, Kwok H S. Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition [J]. J. Appl. Phys., 1999, 86 (1):408-411.

. Ye Zhigao, Zhu Liping, Peng Yingzi, et al. Fabrication and magnetic properties of Co-doped ZnO thin films by pulsed laser deposition [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):486-490 (in Chinese).

. Grola R C, Wmanetogly N W, Liang S, et al. Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011 2) sapphire by metalorganic chemical vapor deposition [J]. J. Appl. Phys., 1999, 85 (5):2595-2602.

. Li Xiangping, Zhang Baolin, Dong Xin, et al. Study on the properties of ZnO films prepared by photo-assisted MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):139-143 (in Chinese).

. Liu Xuedong, Gu Shulin, Li Feng, et al. The effect of carrier gas H2 used during MOCVD-growth on the properties of N-doped ZnO [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):441-446 (in Chinese).

. Gioffre M, Angeloni M, Gagliardi M, et al. The influence of oxygen on the optical properties of RF-sputtered zinc oxide thin films [J]. Supperlattics and Mirostructures, 2007, 42 (1-6):85-88.

. Shan F K, Liu G X, Lee W J, et al. Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition [J]. J. Cryst. Growth, 2005, 277 (1-4):284-292.

. Zhang J P, He G, Zhu L Q, et al. Effect of oxygen partial pressure on the structural and optical properties of ZnO film deposited by reactive sputtering [J]. Appl. Surf. Sci., 2007, 253 (24):9414-9421.

. Miao L, Tanemura S, Tanemura M, et al. Thickness-dependent optical properties of ZnO thin films [J]. J. Mater. Sci.: Mater. Electron., 2007, 18 :S343-S346.

. Liu Y C, Hsieh J H, Tung S K. Extraction of optical constants of zinc oxide thin films by ellipsomerty with various models [J]. Thin Solid Films, 2006, 510 (1-2):32-38.

. Herzinger C, Snyder P, Johs B, et al. InP optical constants between 0.75 and 5.0 eV determined by variable-angle spectroscopic ellipsometry [J]. J. Appl. Phys., 1995, 77 (4):1715-1724.

. Tan S T, Chen B J, Sun X W, et al. Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition [J]. J. Appl. Phys., 2005, 98 (1):013505-1-5.

. Mohamed S H, Abd El-Rahman A M, Salem A M, et al. Effect of rf plasma nitriding time on electrical and optical properties of ZnO thin films [J]. J. Phys. Chem. Solids, 2006, 67 (11):2351-2357.

. Senadim E, Tü Zemen, Kavak H, et al. Influence of oxygen pressure of ZnO/glass substrate produced by plused filtered cathodic vacuum arc deposition [J]. Phys. B: Condensed Matter, 2007, 390 (1-2):366-372.

. Liu Z W, Ong C K. Synthesis and size control of ZnO nanorods by conventional pulsed-laser deposition without catalyst [J]. Mater. Lett., 2007, 61 (16):3329-3333.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

ZnO强耦合微腔中的激子极化激元

基于频率-分辨干涉自相关区分ZnO F-P微腔的二次谐波和多光子荧光

双电层氧化锌薄膜晶体管偏压应力稳定性

基于电场调控的高性能紫外无机-有机复合结构光电探测器

厚度误差对THz-TDS的测量不确定度分析