Optical Properties of SiC Nanorods with Sandwich Structure Synthesized by Pyrolysis of Polymer[J]. Chinese journal of luminescence, 2009, 30(2): 219-222.
Optical Properties of SiC Nanorods with Sandwich Structure Synthesized by Pyrolysis of Polymer[J]. Chinese journal of luminescence, 2009, 30(2): 219-222.DOI:
. Casady J B, Johnson R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications [J]. Solid-State Electronics, 1996, 39 (10):1409-1422.
. Schaffer W J. In diamond, solicon carbide and nitride wide band gap semiconductors [J]. MRS Symposium Proceedings, 1994, 339 :595-599.
. Morkoc H. Large band gap SiC, Ⅲ-Ⅴ nitride, and Ⅱ-Ⅵ ZeSe-based semiconductor-device technologies [J]. J. Appl. Phys., 1994, 76 (3):1363-1398.
. Dai H, Wong E, Lu Y, et al. Synthesis and characterization of carbide nanorods [J]. Nature, 1995, 375 (6534):769-772.
. Wu X, Song W, Huang W, et al. Simultaneous growth of α-Si3N4 and β-SiC nanorods [J]. Mater. Res. Bull., 2001, 36 (5-6):847-852.
. Zhou X, Wang N, Lai H, et al. Surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative electron affinity [J]. Appl. Phys. Lett., 1999, 74 (1):28-30.
. Seeger T, Redlich P, Rühle M. Synthesis of nanometer-sized SiC whiskers in the arc-discharge [J]. Adv. Mater., 2000, 12 (4):279-282.
. Lu Q, Hu J, Tang K, et al. Growth of SiC nanorods at low temperature [J]. Appl. Phys. Lett., 1999, 75 (4):507-509.
. Burton J C, Sun L, Pophristic M, et al. Spatial characterization of doped SiC wafers by Raman spectroscopy [J]. J. Appl. Phys., 1998, 84 (11):6268-6273.
. Han W. Continuous synthesis and characterization of silicon carbide nanorods [J]. Chem. Phys. Lett., 1997, 265 (3-5):374-378.
. Lu Q Y. Growth of SiC nanorods at low temperature [J]. Appl. Phys. Lett., 1999, 75 (4):507-509.
. Feng Z C, Mascarenhas A J, Choyke W J, et al. Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si [J]. J. Appl. Phys., 1988, 64 (6):3176-3186.
. Choyke W J, Feng Z C, Powell J A. Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si [J]. J. Appl. Phys., 1988, 64 (6):3163-3165.
. Itoh H, Yoshikawa M, Nashiyama I, et al. Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si [J]. J. Appl. Phys., 1995, 77 (2):837-839.
. Wu X L, Siu G G, Stokes M J, et al. Blue-emitting-SiC fabricated by annealing C60 coupled on porous silicon [J]. Appl. Phys. Lett., 2000, 77 (9):1292-1294.