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. Kong Meiying, Zeng Yiping, Li Jinmin, et al. Tuning of Infrared absorption wavelength of MBE InGaAs/GaAs quantum dots [J]. Chin. J. Semicond. (半导体学报), 2003, 24 (3):78-80 (in Chinese). InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE WU Dian-zhong1, WANG Wen-xin2, YANG Cheng-liang2, JIANG Zhong-wei2, GAO Han-chao2, TIAN Hai-tao2, CHEN Hong2, JIANG Hong-wei1 (1. Department of Physics, Capital Normal University, Beijing 100048, China; 2. Beijing National Laboratory Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China) Abstract: Self-assembled InAs quantum dots (QDs) capping with the InGaAs layer of the graded component are grown by molecular beam epitaxy (MBE) on GaAs (001). Surface structure, morphology and optical properties of QDs were studied by atomic force microscopy (AFM) and photoluminescence spectroscopy (PL). The insertion of InGaAs layer enhances the quality of epitaxial layer, relaxes the stress of InAs quantum dots, changes the energy level of QDs and suppress the component segregation of indium from the quantum dots. Characteristic of devices were studied byphotocurrent spectra(PC) and volt-ampere characteristic curves. Wavelength red-shift of QDs device with InGaAs graded composition layer was determined by PL and PC curves. Key words: InAs quantum dots; InGaAs graded component layer; photoluminescence; molecular beam epitaxy; infrared detector device