p型深受主能级对OLED器件电荷输运的影响

陈 伟; 饶海波; 蒋 泉; 余心梅; 胡 玥; 李君飞; 侯 斌

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p型深受主能级对OLED器件电荷输运的影响

论文 | 更新时间：2020-08-12

- p型深受主能级对OLED器件电荷输运的影响
- Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs
- 发光学报 2009年30卷第1期页码：51-54
- 作者机构：
  
  电子科技大学光电信息学院,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN383.1;TN873.3
- 纸质出版日期：2009-2-20，
  
  网络出版日期：2009-2-20，
  
  收稿日期：2008-4-16，
  
  修回日期：1900-1-2，
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陈伟, 饶海波, 蒋泉, 等. p型深受主能级对OLED器件电荷输运的影响[J]. 发光学报, 2009,30(1):51-54.

CHEN Wei, RAO Hai-bo, JIANG Quan, et al. Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs[J]. Chinese Journal of Luminescence, 2009,30(1):51-54.
陈伟, 饶海波, 蒋泉, 等. p型深受主能级对OLED器件电荷输运的影响[J]. 发光学报, 2009,30(1):51-54. DOI：

CHEN Wei, RAO Hai-bo, JIANG Quan, et al. Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs[J]. Chinese Journal of Luminescence, 2009,30(1):51-54. DOI：

摘要

对OLED器件施加扫描电压时

器件的瞬态电压-电流特性表现出滞后现象。并且随着扫描电压的方向、扫描速度的不同

器件瞬态电压-电流曲线也不相同。使用具有ITO/CuPc/NPD/Alq

/LiF/Al结构的OLED器件做电压扫描测试

并尝试用p型深受主型陷阱能级的存在

以及深能级较长的充放电时间特性对OLED器件中载流子输运过程的影响来定性解释上述滞后现象

获得了比较满意的结果

为器件性能的进一步优化找到了方向。

Abstract

Transient voltage-current characteristics of OLED show hysteresis effects in the bias regime depending on the direction and speed of bias sweep. This behaviour was investigated here for the example of device based on the configuration of ITO/CuPc/NPD/Alq<sub>3</sub>/LiF/Al. The existence and relatively long recharging time of p-type deep accepter-like trap on the recharging process after the change of bias of OLED should be responsible for these phenomena. According to the above mentioned analysis

some measurements were taken to change the concentration of those deep traps in order to improve the optical and electric performance of OLED.

关键词

有机电致发光电压-电流特性p型深受主能级前向扫描

Keywords

OLEDvoltage-current characteristicp-type deep accepter-like trapforward sweep

references

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. Liu Y Q, Zhang Z F. Reseach and development of OLED [J]. The Electronic Technology of Vacuum (真空电子技术), 2005, (5):24-27 (in Chinese).

. Wang Guangde, Wang Li, Jiang Wenlong, et al. The impact of different DPVBi thickness and position on the organic light-emitting devices [J]. Chin. J. Lumin. (发光学报), 2007, 28 (2):189-192 (in Chinese).

. Li Lu, Yu Junsheng, Li Weizhi, et al. Modification effect of NPB film thickness on charge carrier recombination zone of hetrostructure OLEDs [J]. Chin. J. Lumin. (发光学报), 2007, 28 (3):341-344 (in Chinese).

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. Nguyen P H, Scheinert S, Berleb S, et al. The influence of deep traps on transient current-voltage characteristics of organic light-emitting diodes [J]. Organic Electronics, 2001, 2 (3-4):105-120.

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