p型深受主能级对OLED器件电荷输运的影响

陈 伟; 饶海波; 蒋 泉; 余心梅; 胡 玥; 李君飞; 侯 斌

doi:null

您当前的位置：

首页 >

文章列表页 >

p型深受主能级对OLED器件电荷输运的影响

论文 | 更新时间：2020-08-12

- p型深受主能级对OLED器件电荷输运的影响
- Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs
- 发光学报 2009年30卷第1期页码：51-54
- 作者机构：
  
  1. 电子科技大学光电信息学院,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
扫描看全文
陈伟, 饶海波, 蒋泉, 等. p型深受主能级对OLED器件电荷输运的影响[J]. 发光学报, 2009,30(1):51-54.

CHEN Wei, RAO Hai-bo, JIANG Quan, et al. Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs[J]. Chinese Journal of Luminescence, 2009,30(1):51-54.
陈伟, 饶海波, 蒋泉, 等. p型深受主能级对OLED器件电荷输运的影响[J]. 发光学报, 2009,30(1):51-54. DOI：

CHEN Wei, RAO Hai-bo, JIANG Quan, et al. Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs[J]. Chinese Journal of Luminescence, 2009,30(1):51-54. DOI：

摘要

对OLED器件施加扫描电压时,器件的瞬态电压-电流特性表现出滞后现象。并且随着扫描电压的方向、扫描速度的不同,器件瞬态电压-电流曲线也不相同。使用具有ITO/CuPc/NPD/Alq,3,/LiF/Al结构的OLED器件做电压扫描测试,并尝试用p型深受主型陷阱能级的存在,以及深能级较长的充放电时间特性对OLED器件中载流子输运过程的影响来定性解释上述滞后现象,获得了比较满意的结果,为器件性能的进一步优化找到了方向。

Abstract

Transient voltage-current characteristics of OLED show hysteresis effects in the bias regime depending on the direction and speed of bias sweep. This behaviour was investigated here for the example of device based on the configuration of ITO/CuPc/NPD/Alq₃/LiF/Al. The existence and relatively long recharging time of p-type deep accepter-like trap on the recharging process after the change of bias of OLED should be responsible for these phenomena. According to the above mentioned analysis, some measurements were taken to change the concentration of those deep traps in order to improve the optical and electric performance of OLED.

关键词

有机电致发光电压-电流特性p型深受主能级前向扫描

Keywords

OLEDvoltage-current characteristicp-type deep accepter-like trapforward sweep

references

. Tang C W, Vanslyke S A. Organic electroluminescent diodes [J]. Appl. Phys. Lett., 1987, 51 (12):913-915.

. Zhao G Q, Zhou S H. The development of organic electroluminescence [J]. Exploitation of the Information of Science and Technology (科技情报开发与经济), 2005, 15 (11):160-161 (in Chinese).

. Liu Y Q, Zhang Z F. Reseach and development of OLED [J]. The Electronic Technology of Vacuum (真空电子技术), 2005, (5):24-27 (in Chinese).

. Wang Guangde, Wang Li, Jiang Wenlong, et al. The impact of different DPVBi thickness and position on the organic light-emitting devices [J]. Chin. J. Lumin. (发光学报), 2007, 28 (2):189-192 (in Chinese).

. Li Lu, Yu Junsheng, Li Weizhi, et al. Modification effect of NPB film thickness on charge carrier recombination zone of hetrostructure OLEDs [J]. Chin. J. Lumin. (发光学报), 2007, 28 (3):341-344 (in Chinese).

. Tang Xiaoqing, Yu Junsheng, Li Lu, et al. Effect of ultrathin BCP layer on organic light-emitting device performance [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):253-258 (in Chinese).

. Han Shiliang, Yuan Yongbo, Lian Jiarong, et al. The effect of ITO anode resistance on OLEDs performance [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):429-432 (in Chinese).

. Nguyen P H, Scheinert S, Berleb S, et al. The influence of deep traps on transient current-voltage characteristics of organic light-emitting diodes [J]. Organic Electronics, 2001, 2 (3-4):105-120.

. Riel H, Brutting W, Beierlein T, et al. Influence of space charges on the current-voltage characteristic of organic light-emitting devices [J]. Synthetic Metals, 2000, 111-112 :303-306.

. Liu E K, Zhu B J, Luo P S, et al. Semiconductor Physics [M]. Sixth edition, Beijing: Publishing House of Electronics Industry, 2003 (in Chinese).

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

BPhen作为发光层间隔层对黄光OLED的影响

碳酸铯修饰Al作为反射阴极的倒置顶发射OLED器件

基于新型连接层的有机叠层电致发光器件

MoO₃作空穴注入层的有机电致发光器件

一种新型铕配合物的有机电致发光性能