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1. 长春理工大学 光电工程学院
2. 长春工业大学 电气与电子工程学院
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收稿日期:2008-09-25,
修回日期:1900-01-02,
网络出版日期:2009-04-30,
纸质出版日期:2009-04-30
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林志琦, 张 洋, 郎永辉, 等. 采用半导体激光器自身pn结特性测温的 半导体激光器恒温控制[J]. 发光学报, 2009,30(2):223-227.
Constant Temperature Control of Semiconductor Laser Based on Temperature Characteristics of pn Junction[J]. Chinese journal of luminescence, 2009, 30(2): 223-227.
温度对半导体激光器的发射波长有很大的影响
而很多应用都要求半导体激光器的发射波长是稳定的。针对使用测温元件作为温度传感器进行半导体激光器恒温控制中存在的温度误差
提出了以半导体激光器自身pn结作为温度检测元件进行半导体激光器恒温控制的方法
设计了半导体制冷器的驱动电路。该方法利用pn结的温度敏感特性
首先通过实际测量标定pn结的温度与其两端压降的对应关系
然后通过测量压降得出相应的实际温度。实验结果表明
采用该方法消除了使用温度传感器进行半导体激光器恒温控制中温度梯度造成的恒温误差
提高了测量速度
显著减小了超调量
消除了静差和波动。
paper
. Liu Weihua, Li Youqun, Fang Wenqing, et al. The junction-temperature characteristic of GaN light-emitting diodes on Si substrate [J]. Chin. J. Lumin.(发光学报), 2006, 27 (2):211-214 (in Chinese).
. Chen Ting, Chen Zhizhong, Lin Liang, et al. Methods for determining junction temperature of GaN-based LEDs [J]. Chin. J. Lumin.(发光学报), 2006, 27 (3):407-412 (in Chinese).
. Wang Jian, Huang Xian, Liu Li, et al. Effect of temperature and current to LED luminous effeciency [J]. Chin. J. Lumin.(发光学报), 2008, 29 (2):358-362 (in Chinese).
. Huang Kun, Han Ruqi. Base of Semiconductor Physics [M]. Beijing: Publishing House of Science, 1979,246-248.
. Song Haipeng, Wen Jinmin, Zen Xiongwen, et al. Research of pulse injection method for measuring LD chip temperature [J]. Chin. J. Lasers, 2005, 32 (3):407-410.
. Tan Yanliang, You Kaiming, Chen Liejun, et al. Analysis of the discharge phenomena of light-emitting diodes[J]. Chin. J. Lumin.(发光学报), 2007, 28 (4):551-556 (in Chinese).
. Pan Huapu, Huang Liwei, Li Rui, et al. Finite element model of GaN based LED and the optimization of the mesa structure [J]. Chin. J. Lumin.(发光学报), 2007, 28 (1):114-120 (in Chinese).
. Su Kuifeng, Lu Qiang, Geng Qingfeng, et al. Theory and Development of TMS320F2812 [M]. Beijing: Publishing House of Electronics Industry, 2005, 16-36,395-422.
. Eric Black. An introduction to pound-driver-hall laser frequency stabilization [J]. Am. J. Phys., 2001, 69 (1):79-87.
. Cao Yulian, Wang Le, Liao Xinsheng, et al. Reliability of high-power semiconductor laser diode [J]. Chin. J. Lumin.(发光学报), 2003, 24 (1):100-102 (in Chinese).
. Zhang Na, Zhang Yongli, Tian Xiaojian, et al. Theory and application on the constant temperature control of laser diode [J]. J. Jilin University (吉林大学学报,理学版), 2002, 40 (3):284-287 (in Chinese).
. Chen Guoxiang. Temperature Control of Semiconductor Laser based on MCU . Tianjin: Tianjin University of Tech-nology, 2007, 15-27.
. Li Zhiquan, Wang Zhibin, Wu Fei, et al. Study on a semiconductor temperature sensor with single light source [J]. J. Transduction Technology, 2003, 16 (1):44-46. Constant Temperature Control of Semiconductor Laser Based on Temperature Characteristics of pn Junction LIN Zhi-qi1,2, ZHANG Yang2, LANG Yong-hui2, YIN Fu-chang1 ( 1. Institute of Opto-electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China; 2. School of Electric and Electronic Engineering, Changchun University of Technology, Changchun 130012, China) Abstract: Since the temperature has a great effect on emission wavelength of semiconductor laser device, constant temperature control is necessary to the situation which require high wavelength stabilization. In view of temperature error in constant temperature control of semiconductor laser by means of temperature sensor, a new method taking pn junction of laser diode (LD) itself as temperature detector to achieve the goal of constant temperature was proposed. The drive circuit of semiconductor refrigerator was designed also. This method makes use of the temperature sensitive characteristic of pn junction to test the temperature of pn junction through its terminal voltage. The experiment results showed that the temperature error caused by temperature gradient is eliminated; the experiment speed is increased; the overshoot value is reduced distinctly; and the static error and fluctuation were also eliminated. Key words: laser diode (LD); temperature detecting; temperature measurement by pn junction; semiconductor refrigeration
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