The study on the temperature dependence of photoluminescence(PL)is essentially important for clarifying the processes of energy relaxation and energy transfer in the self-assembled quantum dots(QDs).The unusual dependence on temperature of both the peak energy position and the width of the PL bands has been reported.The fast redshift of PL energy and the anomalous decrease of line-width with increasing tempe-rature have been attributed to thermally enhanced carrier relaxation between quantum dots due to carrier thermal emission and carrier transport through thewetting layer.The PL intensity quencheswith temperature due to carrier thermal escape from the dotground states to the states of thematrixmaterial and/ornonradiative recombination centers.In this paper

the temperature dependence of the PL of self-assembled bimodal QDs was simulated by using a steady-state rate equationmodel. The temperature dependence ofPL intensity ratio of two Q Dspopulationswas emphatically investigated.The results showed tha

t the intensity ratio remains constant at low temperature (

<

75K) and increases continuously at intermediate temperature(75K

<

T

<

150K); when the temperature is raised above 150 K

the intensity ratio has an abnormal decrease.