Ag掺杂p型ZnO薄膜及其同质结的光电性质

孙利杰; 钟声; 张伟英; 王筝; 林碧霞; 傅竹西

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Ag掺杂p型ZnO薄膜及其同质结的光电性质

论文 | 更新时间：2020-08-12

- Ag掺杂p型ZnO薄膜及其同质结的光电性质
- Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties
- 发光学报 2008年29卷第2期页码：304-308
- 作者机构：
  
  中国科学技术大学, 物理系
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(50532070,50472009,10474091)()
- DOI：
  中图分类号： O482.31
- 收稿：2007-10-25，
  
  修回：2007-12-24，
  
  纸质出版：2008-03-20
- 稿件说明：
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孙利杰, 钟声, 张伟英, 王筝, 林碧霞, 傅竹西. Ag掺杂p型ZnO薄膜及其同质结的光电性质[J]. 发光学报, 2008,29(2): 304-308

SUN Li-jie, ZHONG Sheng, ZHANG Wei-ying, WANG Zheng, LIN Bi-xia, FU Zhu-xi. Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties[J]. Chinese Journal of Luminescence, 2008,29(2): 304-308
孙利杰, 钟声, 张伟英, 王筝, 林碧霞, 傅竹西. Ag掺杂p型ZnO薄膜及其同质结的光电性质[J]. 发光学报, 2008,29(2): 304-308 DOI：

SUN Li-jie, ZHONG Sheng, ZHANG Wei-ying, WANG Zheng, LIN Bi-xia, FU Zhu-xi. Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties[J]. Chinese Journal of Luminescence, 2008,29(2): 304-308 DOI：

摘要

采用磁控溅射技术在Si基片上生长了Ag掺杂的ZnO薄膜

XRD测试表明所得薄膜结晶性质良好

未出现Ag的分相。未掺杂和Ag掺杂氧化锌薄膜的低温(10K)光致发光(PL)谱显示:Ag的掺入使得中性施主束缚激子发射(D

X)显著减弱

并且在3.315eV处观测到了与Ag有关的施主-受主对(DAP)发射

受主缺陷的形成归因于掺入的Ag替位Zn。计算得到受主能级离价带顶约110meV。霍尔效应测得电阻率约0.1Ω

#183;cm

迁移率约36cm

#183;s

空穴浓度约1.7

#215;10

-3

。在此基础上制备了ZnO:Ag/ZnO的同质结

测试显示了明显的整流特性

且反向漏电流很小。所有结果表明Ag掺杂的氧化锌薄膜已经转化为p型。

Abstract

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Keywords

references

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