
浏览全部资源
扫码关注微信
东北师范大学, 先进光电子功能材料研究中心
收稿:2007-10-20,
修回:2007-11-24,
纸质出版:2008-03-20
移动端阅览
董利普, 刘玉学, 徐长山, 刘益春, 李亚军. 电子束蒸发结合热处理方法制备高质量Mg<sub>x</sub>Zn<sub>1-x</sub>O薄膜[J]. 发光学报, 2008,29(2): 313-317
DONG Li-pu, LIU Yu-xue, XU Chang-shan, LIU Yi-chun, LI Ya-jun. High Quality Mg<sub>x</sub>Zn<sub>1-x</sub>O Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment[J]. Chinese Journal of Luminescence, 2008,29(2): 313-317
董利普, 刘玉学, 徐长山, 刘益春, 李亚军. 电子束蒸发结合热处理方法制备高质量Mg<sub>x</sub>Zn<sub>1-x</sub>O薄膜[J]. 发光学报, 2008,29(2): 313-317 DOI:
DONG Li-pu, LIU Yu-xue, XU Chang-shan, LIU Yi-chun, LI Ya-jun. High Quality Mg<sub>x</sub>Zn<sub>1-x</sub>O Films Fabricated by Electron Beam Evaporation Combined with Heat Treatment[J]. Chinese Journal of Luminescence, 2008,29(2): 313-317 DOI:
利用电子束蒸发结合热处理方法在150℃下
石英衬底上生长了纤锌矿结构的Mg
x
Zn
1-x
O薄膜。用X射线衍射(XRD)
扫描电镜(SEM)
吸收光谱和室温光致发光(PL)光谱研究了退火条件和降温方式对Mg
x
Zn
1-x
O薄膜的微结构和光学性质的影响。在吸收光谱中
吸收边和吸收峰的蓝移说明:通过改变退火条件和降温方式
可以将Mg
x
Zn
1-x
O薄膜的带隙从3.37eV提高到3.61eV。从SEM的结果得出:吸收边和吸收峰的蓝移不是由量子限制效应引起的
而是形成了Mg
x
Zn
1-x
O合金薄膜。在XRD谱图中
没观察到属于MgO的衍射峰
700℃退火快速降温至室温薄膜的衍射峰的半高全宽(FWHM)较其他薄膜的衍射峰有所展宽
说明Mg
2+
已经成功地取代了ZnO中的Zn
2+
。薄膜的室温光致发光谱说明:通过采用快速降温
可制得高质量的Mg
x
Zn
1-x
O薄膜。
Makino T,Chia C H,Tuan N T,et al.Room-temperature luminescence of excitons in ZnO/(Mg,Zn)O multiple quantum wells on lattice-matched substrates[J].Appl.Phys.Lett.,2000,77(7):975-977.
Makino T,Tuan N T,Sun H D,et al.Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells[J].Appl.Phys.Lett.,2001,78(14):1979-1981.
Chia C H,Makino T,Tamura K,et al.Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells[J].Appl.Phys.Lett.,2003,82(12):1848-1850.
Ohtomo A,Kawasaki M,Koida T,et al.MgxZn1-xO as a Ⅱ-Ⅵ widegap semiconductor alloy[J].Appl.Phys.Lett.,1998,72(19):2466-2468.
Muthukumar S,Zhong J,Chen Y,et al.Growth and structural analysis of metalorganic chemical vapor deposited (1120) MgxZn1-xO (0[6] Park W I,Yi G C,Jang H M.Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0≤x≤0.49) thin films[J].Appl.Phys.Lett.,2001,79(13):2022-2024.
Liu Wei,Gu Shulin,Zhu Shunmin,et al.The deposition and annealing study of MOCVD ZnMgO[J].J.Cryst.Growth,2005,277(1-4):416-421.
Heitsch S,Zimmermann G,Fritsch D,et al.Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition[J].J.Appl.Phys.,2007,101(8):08352-1-6.
Misra P,Sharma T K,Porwal S,et al Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition[J].Appl.Phys.Lett.,2006,89(16):161912-1-3.
Schmidt R,Rheinla under B,Schubert M,et al.Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (x≤0.29) thin films[J].Appl.Phys.Lett.,2003,82(14):2260-2262.
Bundesmann C,Schubert M,Spemann D,et al.Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2)[J].Appl.Phys.Lett.,2002,81(13):2376-2378.
Bundesmann C,Schubert M,Rahm A,et al.Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO(x≥0.67) thin films on sapphire (0001)[J].Appl.Phys.Lett.,2004,85(6):905-907.
Teng C W,Muth J F,Ozgür U,et al.Refractive indices and absorption coefficients of MgxZn1-xO alloys[J].Appl.Phys.Lett.,2000,76(8):979-981.
Shibata H,Tampo H,Matsubara K,et al.Photoluminescence characterization of Zn1-xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy[J].Appl.Phys.Lett.,2007,90(12):124104-1-4.
Koike K,Hama K,Nakashima I,et al.Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J].J.Cryst.Growth,2005,278(1-4):288-292.
Ogata K,Koike K,Tanite T,et al.ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy[J].J.Cryst.Growth,2003,251(1-4):623-627.
Chen J,Shen W Z,Chen N B,et al.The study of composition non-uniformity in ternary MgxZn1-xO thin films[J].J.Phys.Condens.Matter.,2003,15(30):L475-L482.
Suchand Sandeep C S,Philip Reji,Satheeshkumar R,et al.Sol-gel synthesis and nonlinear optical transmission in Zn1-xMgxO (x≤0.2) thin films[J].Appl.Phys.Lett.,2006,89(6):063102-1-3.
Lorenz M,Kaidashev E M,Rahm A,et al.MgxZn1-xO(0≤x《0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition[J].Appl.Phys.Lett.,2005,86(14):143113-1-3.
0
浏览量
206
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构
京公网安备11010802024621