MOCVD生长InxGa1-xN合金微观结构和光学特性

竹有章; 陈光德; 苑进社

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MOCVD生长In_xGa_1-xN合金微观结构和光学特性

论文 | 更新时间：2020-08-12

- MOCVD生长In_xGa_1-xN合金微观结构和光学特性
- Investigation on Optical and Micro-structural Properties of In_xGa_1-xN Alloys Grown by MOCVD
- 发光学报 2008年29卷第2期页码：318-324
- 作者机构：
  
  1. 西安交通大学, 应用物理系
  2. 第二炮兵工程学院, 物理教研室
  3. 重庆师范大学, 应用物理系
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(10474078)()
- DOI：
  中图分类号： O472.3;O482.31
- 收稿：2007-07-14，
  
  修回：2008-1-9，
  
  纸质出版：2008-03-20
- 稿件说明：
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竹有章, 陈光德, 苑进社. MOCVD生长InxGa1-xN合金微观结构和光学特性[J]. 发光学报, 2008,29(2): 318-324

ZHU You-zhang, CHEN Guang-de, YUAN Jin-she. Investigation on Optical and Micro-structural Properties of InxGa1-xN Alloys Grown by MOCVD[J]. Chinese Journal of Luminescence, 2008,29(2): 318-324
竹有章, 陈光德, 苑进社. MOCVD生长InxGa1-xN合金微观结构和光学特性[J]. 发光学报, 2008,29(2): 318-324 DOI：

ZHU You-zhang, CHEN Guang-de, YUAN Jin-she. Investigation on Optical and Micro-structural Properties of InxGa1-xN Alloys Grown by MOCVD[J]. Chinese Journal of Luminescence, 2008,29(2): 318-324 DOI：

摘要

利用发光光谱、X射线衍射(XRD)、原子力显微(AFM)等实验方法对MOCVD生长的In

1-x

N合金进行了研究。原子力显微图样表明样品表面出现纳米尺度为微岛状结构。样品PL和PLE谱表明

其主要吸收峰位于波长为365

474nm

发光峰的位置位于波长为545

493nm处

其中545nm发光峰半高宽较493nm发光峰宽

这两个峰分别起源于In(Ga)N浸润层和InGaN层发光

浸润层局域化激子和岛状微观结构弛豫特性是产生发光峰Stokes移动的重要原因。

Abstract

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references

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