生长温度对碳纳米管阴极场发射性能的影响

王莉莉; 孙卓; 陈婷

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生长温度对碳纳米管阴极场发射性能的影响

研究论文 | 更新时间：2020-08-11

- 生长温度对碳纳米管阴极场发射性能的影响
- Effects of CVD-Carbon Nanotubes Growth Temperatures on Field Emission Properties
- 发光学报 2006年27卷第1期页码：123-128
- 作者机构：
  
  华东师范大学, 纳米功能材料与器件应用研究中心, 上海纳晶科技有限公司
- 作者简介：
- 基金信息：
  
  上海市科委纳米专项(0452NM048)();上海市科委科技攻关项目(035211036)();上海市技术创新体系建设项目(沪创新J-64)();教育部科学技术研究重点
- DOI：
  中图分类号： O462.4;TN873+.95
- 收稿：2004-10-11，
  
  修回：2005-4-20，
  
  纸质出版：2006-01-20
- 稿件说明：
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王莉莉, 孙卓, 陈婷. 生长温度对碳纳米管阴极场发射性能的影响[J]. 发光学报, 2006,27(1): 123-128

WANG Li-li, SUN Zhou, CHEN Ting. Effects of CVD-Carbon Nanotubes Growth Temperatures on Field Emission Properties[J]. Chinese Journal of Luminescence, 2006,27(1): 123-128
王莉莉, 孙卓, 陈婷. 生长温度对碳纳米管阴极场发射性能的影响[J]. 发光学报, 2006,27(1): 123-128 DOI：

WANG Li-li, SUN Zhou, CHEN Ting. Effects of CVD-Carbon Nanotubes Growth Temperatures on Field Emission Properties[J]. Chinese Journal of Luminescence, 2006,27(1): 123-128 DOI：

摘要

碳纳米管(Carbon Nanotubes

CNTs)场发射平面显示器(Field Emission Display

FED)与其他显示器比较显示了其独特优点

被认为是未来理想的平面显示器之一。碳纳米管阴极作为器件的核心部分

其性能的好坏直接影响显示器的性能。针对30~60英寸(76.2~152.4cm)大屏幕显示器所用的厚膜工艺

即采用丝网印刷法制备了碳纳米管阴极阵列

研究了化学气相沉积法在不同温度下生长的CNTs的场发射电流-电压特性

找到了适合FED用碳纳米管的最佳生长温度。结果表明生长温度越高(750℃)

CNTs场发射性能越好。并用荧光粉阳极测试这些CNTs的场发射发光显示效果

验证了上述结论。

Abstract

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