Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD
发光学报2005年26卷第2期 页码:229-232
作者机构:
1. 西安交通大学理学院
2. Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA
作者简介:
基金信息:
国家自然科学基金资助项目(10474078)
DOI:
中图分类号:O433;O472;O765
收稿:2004-05-08,
修回:2004-12-11,
纸质出版:2005-03-20
稿件说明:
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王瑞敏, 陈光德, LIN J Y, JIANG H X. MOCVD生长的GaN和GaN:Mg薄膜的拉曼散射[J]. 发光学报, 2005,26(2): 229-232
WANG Rui-min, CHEN Guang-de, LIN J Y, JIANG H X. Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2005,26(2): 229-232
王瑞敏, 陈光德, LIN J Y, JIANG H X. MOCVD生长的GaN和GaN:Mg薄膜的拉曼散射[J]. 发光学报, 2005,26(2): 229-232DOI:
WANG Rui-min, CHEN Guang-de, LIN J Y, JIANG H X. Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2005,26(2): 229-232DOI: