808nm high power semiconductor laser was widely used to pump Nd: YAG laser.Here we report the quasi-continuous wave (QCW) operation of 808urn Al-free InGaAsP/GaAs high-power 1-cm-wide laser array bar. The active layer structure we used here was the separate confine heterostructure (SCH) single quantum well. An output power of 37W with frequeney of 1000Hi

pulse width of 200μs and duty-cycle of 20% was achieved at room temperature when driven by excitation current of 49A

which was the upper limit of our driving source. The slope efficiency of the bar was 1.03W/A.The power efficiency was estimated to be about 39%.