The operating characteristics of Al-free InGaP/InGaAsP/GaAs separate confinement heterostructure single quantum well (SCH. SQW)high pover laser grovn by LP MOCVD are reported. The internal differential quantum efficiency η

i

is closed 100%. The external differntial quantum efficienty η

d

of 75% and characteristics temperature to of 146℃ are achieved

CW total output power both facets of 2.6W single quantum well laser with 100μm width

1.1mm cavity length is obtand threshold current desity J

th

. Reciprocal differential quantum efficiency 1/η

d

. Emisson wavelength and charactreistic temperature to as function of laser cavity length

L

respectively have been measued and researched. Dependence of J

th

and η

d

respectively on temperature

T

have been goven and explained.On the basis of these work

we researched and fabricated 808nm InGaAsP/InGaP/GaAs separate confinement heterostructure single quantum well (SCH SQW) laser array with 30 elements

1cm long laser bar. Slope efficiency 1.2W/A. Laser array working wavelength at 808nm

QCW output power is up to 27 watts.