In this paper we derived hole-burning quantum efficiency by the luminescent dynamical equations under the condition of pumping and gating with a pulsed laser. Holeburning were perfomed at 77K by a 560 nm laser with different laser power. The dependence of hole depth on pulse number were observed and hole burning quantum efficiency with different laser power were obtained. The dependence of hole-burning quantum efficiency on

5

D

J

-

7

F

0

transition probability were proved by measuring the dependence of hole depth on pulse number in BaF(Cl

Br): Sm

2+

and in SrF(Cl

Br):Sm

2+

under the same burning condition.