具有叠层超薄膜结构的高性能有机晶体管氨气传感器 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "具有叠层超薄膜结构的高性能有机晶体管氨气传感器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High-performance Organic Transistor Ammonia Sensor with Laminated Ultrathin Film Structure" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "陈", "givenname": "晗", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Han", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "陈晗(1996-)，男，湖南长沙人，硕士研究生，2018年于合肥工业大学获得学士学位，主要从事有机超薄膜场效应晶体管及其传感特性的研究。E-mail: 18656096421@sina.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351370&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351372&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351376&type=" } ], "data": [ [ { "name": "text", "data": "陈晗" }, { "name": "text", "data": "(1996-)，男，湖南长沙人，硕士研究生，2018年于合肥工业大学获得学士学位，主要从事有机超薄膜场效应晶体管及其传感特性的研究。E-mail: " }, { "name": "text", "data": "18656096421@sina.cn" } ] ] } ], "email": "18656096421@sina.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "胡", "givenname": "琪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HU", "givenname": "Qi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "邱", "givenname": "龙臻", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "QIU", "givenname": "Long-zhen", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "晓鸿", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Xiao-hong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "zh", "text": "Corresponding Author, E-mail: xhwang11@hfut.edu.cn", "data": [ { "name": "text", "data": "Corresponding Author, E-mail: xhwang11@hfut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王晓鸿(1981-)，女，山东临朐人，博士，副研究员，2016年于合肥工业大学获得博士学位，主要从事有机共轭聚合物光电材料、有机光电晶体管器件及印刷有机电子器件的研究。Email: xhwang11@hfut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351380&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351384&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351388&type=" } ], "data": [ [ { "name": "text", "data": "王晓鸿" }, { "name": "text", "data": "(1981-)，女，山东临朐人，博士，副研究员，2016年于合肥工业大学获得博士学位，主要从事有机共轭聚合物光电材料、有机光电晶体管器件及印刷有机电子器件的研究。Email: " }, { "name": "text", "data": "xhwang11@hfut.edu.cn" } ] ] } ], "email": "xhwang11@hfut.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "合肥工业大学 光电技术研究院， 特种显示技术国家工程实验室，现代显示技术省部共建国家重点实验室培育基地， 安徽 合肥 　 230009", "data": [ { "name": "text", "data": "合肥工业大学 光电技术研究院， 特种显示技术国家工程实验室，现代显示技术省部共建国家重点实验室培育基地， 安徽 合肥 　 230009" } ] }, { "lang": "en", "label": "1", "text": "National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China", "data": [ { "name": "text", "data": "National Engineering Lab of Special Display Technology, National Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "研究了基于给-受体共轭聚合物双(2-氧代二氢吲哚-3-亚基) -苯并二呋喃-二酮和联噻吩(PBIBDF-BT) 超薄膜叠层晶体管的电学性能及氨气传感特性。使用相分离方法以及转移-刻蚀步骤制备了不同堆叠层数的PBIBDF-BT超薄膜。系统地研究了PBIBDF-BT超薄膜堆叠层数与器件性能的关系。实验结果表明，单层PBIBDF-BT超薄膜器件对氨气具有良好的传感性能，电学性能较差。超薄膜叠层能够有效提高传感器的电学性能，随着超薄膜叠层数量的增加，器件迁移率不断上升;超薄膜层数增加为3层及更多时迁移率上升趋势变缓，迁移率最大值为0.58 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。超薄膜叠层器件氨气传感性能在层数为2层后呈现下降趋势。通过PBIBDF-BT超薄膜叠层方法，制备出在1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "氨气环境下，迁移率为0.23 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "、源漏电流变化百分比为90.7%、性能良好的OFET氨气传感器。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The electrical properties and the ammonia sensing transistor characteristics of ultrathin film laminated transistors based on donor-acceptor conjugated polymer bis(2-oxoindole-3-ylidene)-benzodifuran-dione and bithiophene(PBIBDF-BT) were studied. The PBIBDF-BT ultrathin films with different stacking layers were prepared by phase separation method and transfer-etching step. The relationship between the number of PBIBDF-BT ultrathin film stacks and the performance of the device were systematically studied. Experimental results indicate that the single-layer PBIBDF-BT ultrathin film device has good sensing performance for ammonia, but the electrical performance is poor. Ultrathin film stacking can effectively improve the electrical performance of the device. As the number of ultrathin film stacks increases, the device mobility increased. When the number of ultrathin film layers increases to 3 layers or more, the increasing trend of mobility slows down and the maximum mobility is 0.58 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ". The ammonia sensing performance of ultrathin film laminate devices shows a downward trend when the number of layers is 2. Through the PBIBDF-BT ultrathin film stacking method, an OFET ammonia gas sensor with good performance was prepared under 1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " ammonia environment, with a mobility of 0.23 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ", the source-drain current change percentage of 90.7%." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "有机超薄膜晶体管" } ], [ { "name": "text", "data": "给体-受体共轭聚合物" } ], [ { "name": "text", "data": "氨气检测" } ], [ { "name": "text", "data": "超薄膜叠层" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "organic ultra-thin film transistor" } ], [ { "name": "text", "data": "donor-acceptor conjugated polymer" } ], [ { "name": "text", "data": "ammonia gas detection" } ], [ { "name": "text", "data": "ultrathin film stack" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "氨气检测对于工业、食品储存、健康检测十分重要。性能良好的传感器可使人们及时对有害气体做出反应，进而降低危害" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有机场效应晶体管(OFET)近些年成为气体传感器领域的研究热点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R4", "R5", "R6", "R7", "R8", "R9", "R10" ], "text": "4-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。OFET气体传感器的传感能力(感应电流)与目标分析物扩散到OFET器件导电沟道的能力直接相关，如何减少目标分析物扩散至器件导电沟道的路径也越来越重要" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "超薄膜OFET传感器因其超薄有机半导体层与气体分子有着更多的接触面积以及能够有效减少气体分子扩散至导电沟道的路径，在性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R12", "R13", "R14", "R15" ], "text": "12-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、功耗成本" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R16", "R17" ], "text": "16-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等方面与传统电阻传感器件相比具有优势。尽管目前已有许多关于超薄膜OFET传感的研究，精确地控制共轭聚合物超薄膜的层数，实现超薄薄膜从单分子层向多层的转变，对于理解有机场效应晶体管的传感机制、构建性能良好的OFET气体传感器具有重要意义。研究人员一般利用Langmuir-Schäfer(LS)膜法获得共轭聚合物的单层超薄膜以及多层超薄膜结构。Fabiano等通过LS法研究了poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)},P(NDI2OD-T2)的单层、多层结构及其对电学性能的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R18", "R19", "R20" ], "text": "18-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。叠层引起器件性能变化的物理机制是单层膜中存在缺陷，增加层数，电荷可以从增加的薄膜中传输，形成导电通路，消除或减小单层中缺陷的影响。Ge等认为超薄膜经过叠层之后，π-π距离保持不变，层间间距缩小，分子堆积更加紧密，表现出良好的结晶性质，这可能有利于载流子的传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，目前关于超薄膜叠层对传感性能影响的研究还相对较少，因此需要系统研究超薄膜叠层结构对器件电学性能以及传感性能的影响。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "普通的旋涂成膜方法在工艺上难以制备超薄膜，相分离方法能够精确控制超薄膜厚度，保证薄膜的均一性，有利于制备超薄膜叠层结构。本文利用相分离方法制备出基于共轭聚合物PBIBDF-BT/绝缘聚合物的相分离复合薄膜，通过多次重复转移-刻蚀步骤，成功制备出PBIBDF-BT超薄膜以及一系列不同层数的超薄膜叠层结构。通过制备OFET器件，系统地研究了PBIBDF-BT超薄膜堆叠层数与器件性能的关系。通过PBIBDF-BT超薄膜叠层这一方法，获得了性能稳定、电学性能以及传感性能良好的OFET传感器。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　PBIBDF-BT超薄膜叠层及OFET制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "首先用7∶3比例配置的浓硫酸和双氧水将SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si和Si基底加热1.5 h，然后用蒸馏水清洗SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si和Si基底并用氮气气流进行干燥。将含氟聚合物perfluoro(1-butenyl vinyl ether) polymer(Cytop)以3 000 r/min的速度旋涂在SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si基底上，旋涂时间持续60 s。然后将其放置于热台上，以180 ℃的温度热处理15 min。将聚乙烯醇(PVA)用作转移薄膜的牺牲层，以2 000 r/min的速度旋涂至硅基底上，旋涂时间为40 s。在室温下以4 000 r/min的速度将PBIBDF-BT(0.5 mg/mL)和聚苯乙烯PS(20 mg/mL)的共混溶液旋涂至PVA处理的硅基底上，旋涂时间为40 s。将复合薄膜缓慢浸入水中，使制备好的PBIBDF-BT/PS复合薄膜漂在水面上，然后用经过Cytop处理的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si基底将复合薄膜倒置捞出。用乙酸乙酯蚀刻复合薄膜中的PS，冲洗三次，此时PBIBDF-BT超薄膜留在Cytop处理的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si基底上。重复以上转移刻蚀步骤，获得PBIBDF-BT超薄膜叠层(如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示)。叠层完毕后在150 ℃氮气环境下退火约20 min。最后，利用掩膜版在薄膜上沉积金源极和金漏极(" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "text", "data": "= 1 000 μm," }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "=100 μm)，制备并测试20~25个器件。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "PBIBDF-BT/PS复合膜反复转移-刻蚀，得到PBIBDF-BT超薄膜叠层。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Repetitive transfer-etch process of PBIBDF-BT/PS blend films to form PBIBDF-BT multilayers" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351392&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351401&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351396&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　实验仪器及材料" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体聚合物(PBIBDF-BT," }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": "=58 852 g/mol)的合成见本课题组先前文章" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R22", "R23" ], "text": "22-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。氯仿(CHCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")和PS(" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": "=2 000 g/mol)购自Sigma-Aldrich Chemical Co,Cytop和PVA购自Asahi Glass Co., Ltd。利用Keithley 4200型半导体测试仪在实验室内测量了基于PBIBDF-BT超薄膜有机场效应晶体管的电学特性和氨气传感特性。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　PBIBDF-BT超薄膜叠层表征及其电学性能" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "利用原子力显微镜对叠层半导体超薄膜进行表征，结果如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图2(a)~(d)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)~(d)" } ] } }, { "name": "text", "data": "分别为叠层数为单层、两层、三层、四层的超薄膜。利用AFM软件计算不同叠层数超薄膜厚度，随着叠层数量的增加，叠层超薄膜的厚度分别为4.1,8.3,11.9,15.3 nm。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同对叠层数的PBIBDF-BT超薄膜膜厚分析。(a)单层;(b)双层;(c)三层;(d)四层。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Profile analysis of PBIBDF-BT ultrathin films with different layer numbers. (a)1 layer. (b)2 layers. (c)3 layers. (d)4 layers." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351406&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351414&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351409&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对制备的一系列PBIBDF-BT叠层超薄膜的电学特性进行研究，将叠层的半导体超薄膜上蒸镀一层金电极，制备底栅顶接触的OFET器件。饱和状态下工作的OFET器件其迁移率由|" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "|" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "作图的最大斜率所得，计算过程如公式(1)所示:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351417&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351419&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351424&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF26" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "为漏极电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "为栅极电压，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "为阈值电压，" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "为单位面积电容，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "text", "data": "分别为导电沟道的长度和宽度。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "展示了层数分别为1层、2层、3层、4层的超薄膜器件转移特性输出曲线。从图中可以看出单层的超薄膜器件电学性能较低，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "=-80 V时器件源漏极电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "=3.7×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": " A，迁移率为5.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。当PBIBDF-BT超薄膜叠层数增加为两层之后，器件电流提高为" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "=1.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " A，器件开态电流得到了明显的提高，迁移率也相对应地提高为0.23 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图4(a)、(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)、(b)" } ] } }, { "name": "text", "data": "显示了超薄膜层数从1层到4层变化时PBIBDF-BT超薄膜OFET器件的迁移率和阈值电压的变化趋势。PBIBDF-BT超薄膜OFET器件迁移率随着层数增加处于上升趋势，当超薄膜层数达到3层以及更多时，迁移率上升趋势变缓，叠层超薄膜器件迁移率最大值达到0.58 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " ·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "可以看出超薄膜叠层能够有效提高器件的场效应性能，开关比(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "off" } ] }, { "name": "text", "data": ")、阈值电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": ")等OFET性能参数表现良好。这证明了叠层能够有效优化超薄膜器件的电学性能。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同层数的PBIBDF-BT超薄膜转移特性曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Transfer curves of PBIBDF-BT ultrathin films with different layer numbers" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351428&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351440&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351433&type=" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同层数PBIBDF-BT超薄膜的迁移率变化趋势(a)与阈值电压变化趋势(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Evolution of the field-effect mobilities(a) and the threshold voltages(b) by varying PBIBDF-BTultrathin film layer numbers" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351444&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351453&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351449&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "阈值电压的变化趋势则不同于迁移率变化趋势，随着超薄膜叠层数量的增加，阈值电压不断变小，当超薄膜层数达到3层以及更多时阈值电压变化趋于稳定，维持在-5 V左右。值得注意的是，由于这种超薄膜OFET的导电沟道直接暴露在外界环境下，高LUMO能级(-4.03 eV)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的PBIBDF-BT聚合物在空气中形成电子陷阱，降低了超薄膜OFET器件的电子传输性能，故PBIBDF-BT超薄膜叠层器件电子传输性能较差。通过叠层能够使器件获得稳定的空穴传输性能。以上数据充分说明了叠层的优势，证明了超薄膜叠层能够为PBIBDF-BT半导体载流子提供更为良好的导电通道，超薄膜叠层结构能够优化器件的电学性能。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　PBIBDF-BT超薄膜氨气选择性" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "对PBIBDF-BT超薄膜OFET器件进行气体选择性测试，测试装置如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，将器件分别暴露于乙醇、丙酮这两种极性分子蒸气和正己烷这种非极性分子蒸气中。利用饱和蒸气压原理产生有机溶剂蒸气，其浓度在5.7×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "~6.5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "之间变化。公式(2)给出了有机溶剂蒸气浓度计算方法:" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "PBIBDF-BT超薄膜OFET测试装置示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Testing equipment for PBIBDF-BT ultrathin film OFET" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351456&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351465&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351461&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351469&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351470&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351474&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF27" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "是物质的蒸汽压，" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "是温度，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "为Antoine常数，可以通过查表得到。氨气的浓度控制为1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "。整个传感测试过程参数如下:漏极电压恒定为-80 V，栅极电压为频率为0.2 Hz的脉冲电压，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "off" } ] }, { "name": "text", "data": "=0 V," }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "=-60 V。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "给出了器件选择性测试曲线，曲线纵坐标为器件源漏极电流，横坐标表示器件测试时间。从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中可以计算出器件在丙酮蒸气下电流降低为初始值的65.8%，在乙醇蒸气下电流降低为初始值的46.8%，正己烷蒸气下电流降低为初始值的41.0%，在氨气下电流降低为初始值的88.3%。结果表明，器件对1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "氨气的电流变化远高于浓度为5.7×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "~6.5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "的其他有机溶剂蒸气，基于PBIBDF-BT超薄膜的OFET对氨具有良好的选择性。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "PBIBDF-BT超薄膜OFET在不同气体分析物下的电流曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Curves of PBIBDF-BT ultrathin film OFET exposed to different gas analytes" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351477&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351484&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351480&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　PBIBDF-BT超薄膜叠层器件氨气敏感特性" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究超薄膜叠层对氨气传感性能的影响，将不同超薄膜堆叠层数的OFET器件置于不同氨气浓度下进行传感测试。氨气浓度由0(纯氮)依次变化为2.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ", 4.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",6.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",8.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "，气体浓度通过N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的气体流速之比控制。在整个气体测试过程中，混合气体的流速保持在1.5 L/min不变，实验环境湿度控制在45%~55%，温度控制在26 ℃。在不同浓度的氨气条件下，器件场效应参数变化的百分比(" }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": ")通过公式(3)来定义:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351488&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351492&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351496&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF28" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "表示器件源漏电流变化百分比;" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为测量初始值;" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "i" } ] } ] }, { "name": "text", "data": "表示不同测量条件下的数值，" }, { "name": "italic", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "=1,2,3,…。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "为不同超薄膜堆叠层数的OFET器件在氨气浓度为0,2.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",4.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",6.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",8.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": ",1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "时的转移特性曲线。从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "中可以计算出叠层数量为4层的OFET器件在纯氮环境中源漏极电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "= 3.2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " A，迁移率为0.58 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。随着氨气的浓度增加为1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "，器件的开态电流下降至" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "= 2.1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " A，迁移率降低为0.3 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，源漏电流变化百分比为34.3%。这种较小的电学性能变化说明4层的器件虽然具有良好的电学性能，但氨气传感能力较差。单层的超薄膜OFET器件在纯氮环境中源漏极电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "=3.7×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": " A，迁移率为5.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。随着氨气浓度增加为1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "，其器件的开态电流下降至" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "=2.4×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-9" } ] }, { "name": "text", "data": " A，迁移率降低为1.49×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，源漏电流变化为93.5%。这说明单层超薄膜OFET器件具备较好的传感性能，电学性能差。叠层数量为2层的OFET器件在纯氮环境中源漏极电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "=1.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " A，迁移率为0.23 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，相较于1层器件而言电学性能有着很大的提升。随着氨气浓度增加为1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "，其器件的开态电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "=1.2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " A，迁移率为0.035 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，电流变化为90.7%。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同层数的PBIBDF-BT超薄膜OFET器件在2.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": "~1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "浓度下的转移曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Transfer curves of the OFET devices based on different ultrathin PBIBDF films layer numbers under different NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " concentration from 2.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " to 1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351498&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351505&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351501&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "展示了超薄膜叠层器件在不同氨气浓度下的迁移率和阈值电压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "。随着氨气浓度的增加，迁移率逐渐降低，阈值电压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "的变化趋势与迁移率表现一致。这是由于氨气与半导体之间的电荷偶极效应增加了半导体中的能量扰动数，而氨气分子在半导体/绝缘层界面上的偶极捕获效应形成了陷阱，改变了界面处的接触电位所导致的。氨气分子作为电子供体，在空穴载流子传输过程中充当空穴陷阱吸附空穴载流子，从而导致PBIBDF-BT 超薄膜叠层器件源漏电流降低。" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "总结了不同超薄膜叠层数OFET器件在NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 为1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "下的源漏电流变化百分比及电学性能。从表中可以看出叠层数为2层的器件有着良好的电学性能以及传感性能。实验证明了利用叠层方法可以实现对器件传感性能和电学性能的调控，获得同时具有良好电学性能和良好氨气传感性能的器件。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同超薄膜堆叠层数的OFET器件电学性能与氨气传感性能" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Electrical performance and ammonia sensing performance of OFET devices with different stack numbers of ultra-thin films" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "超薄膜叠层数" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "迁移率/(cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "阈值电压 (" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": 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mobility and " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": " on the NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " concentration of the OFET devices based on different ultrathin PBIBDF films layer numbers" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351517&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351521&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351520&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　PBIBDF-BT超薄膜叠层器件氨气传感稳定性" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "　稳定性对于传感器件而言是一个很重要的评价参数。在恒定漏极电压为-80 V、栅极电压为0.2 Hz、" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "off" } ] }, { "name": "text", "data": "=0 V、" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "=-60 V的条件下对叠层数为2层的OFET超薄膜器件进行循环测试。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "显示了叠层数为2层的OFET超薄膜器件循环测试曲线，当器件在高纯度氮气环境下工作时，源漏极电流(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": ")处于最大值状态;当器件暴露于1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "浓度的氨气时，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "在短时间内显著下降。当氨气被去除后，电流能够迅速恢复到原来的值，此时的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DS" } ] }, { "name": "text", "data": "缓慢下降是由于器件的偏压不稳定性所导致，文中实验部分施加频率为0.2 Hz的栅极电压能够最大程度上减缓器件的偏压不稳定性。如此重复5个周期，测试曲线基本保持一致。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "证明了利用叠层方法制备的2层超薄膜OFET器件在5个周期范围内具有稳定性和重复性。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "双层PBIBDF-BT超薄膜OFET的循环测试性能" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Cycle test performance of the double layers PBIBDF-BT ultrathin films OFET" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351524&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351528&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351526&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过重复简单的转移-刻蚀方法，制备了PBIBDF-BT超薄膜叠层结构。这些超薄膜叠层具有非常稳定的优异的电学性能，超薄膜堆叠层数上升，空穴迁移率能够保持上升趋势且最大值为0.58 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。研究了PBIBDF-BT超薄膜堆叠层数与器件性能的关系，证明了基于溶液相分离的叠层方法能够有效控制OFET的电学性能以及氨气传感性能，叠层超薄膜结构能够在保证器件传感性能的同时最大程度提高器件的电学性能，使器件的气敏性和电学稳定性达到最大程度的平衡。当超薄膜叠层数为2层时，制备的有机场效应晶体管迁移率为0.23 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，源漏电流变化百分比为90.7%，制备了性能稳定、电学性能及氨气传感性能良好的OFET传感器。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210107." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YU S H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHO J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SIM K 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