Luminescence of Mn<sup>2+</sup> in Metal Chalcogenide Cluster-based Semiconductors

Jian LIN; De-sui CHEN; Jia-hui SHEN; Pei-yong ZENG

doi:10.37188/CJL.20210047

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Luminescence of Mn²⁺ in Metal Chalcogenide Cluster-based Semiconductors

Invited Review | Updated：2021-07-22

- Luminescence of Mn²⁺ in Metal Chalcogenide Cluster-based Semiconductors
- Chinese Journal of Luminescence Vol.42, Issue 7, (2021)
- Affiliations：
  
  School of Materials Science and Engineering, Suzhou University of Science and Technology,Suzhou,China,215009;Zhejiang Key Laboratory for Excited-state Materials, Department of Chemistry, Zhejiang University,Hangzhou,China,310027
- Author bio：
- Funds：
  
  National Natural Science Foundation of China(22001187);Natural Science Research Foundation of Jiangsu Higher Education Institutions(20KJB150032)
- DOI：10.37188/CJL.20210047 CLC： O482.31
- Published：01 July 2021，
  
  Received：31 January 2021，
  
  Revised：26 February 2021，
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Jian LIN, De-sui CHEN, Jia-hui SHEN, et al. Luminescence of Mn²⁺ in Metal Chalcogenide Cluster-based Semiconductors. [J]. Chinese Journal of Luminescence 42(7):953-975(2021)
DOI：

Jian LIN, De-sui CHEN, Jia-hui SHEN, et al. Luminescence of Mn²⁺ in Metal Chalcogenide Cluster-based Semiconductors. [J]. Chinese Journal of Luminescence 42(7):953-975(2021) DOI： 10.37188/CJL.20210047.

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] } ], "bio": [ { "lang": "zh", "text": [ "林坚(1986-)，男，浙江绍兴人，博士，副教授，2017年于苏州大学获得博士学位，主要从事半导体功能材料的合成与光电性能的研究。E-mail: linjian@mail.usts.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351653&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351659&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351665&type=" } ], "data": [ [ { "name": "text", "data": "林坚" }, { "name": "text", "data": "(1986-)，男，浙江绍兴人，博士，副教授，2017年于苏州大学获得博士学位，主要从事半导体功能材料的合成与光电性能的研究。E-mail: " }, { "name": "text", "data": "linjian@mail.usts.edu.cn" } ] ] } ], "email": "linjian@mail.usts.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "陈", "givenname": "德睢", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "De-sui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], 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"发光特性。金属硫族簇基半导体具有原子级的精确结构，为探究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光的精确“构效关系”提供了理想模型。在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体中， Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "附近键长和团簇组装方式的差异决定了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位场强的变化，进而影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光波长的变化。在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族纳米团簇中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的聚集形式和聚集体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的数量决定了Mn-Mn耦合相互作用的大小，直接影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率、寿命及激发特性。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The relatively stable luminescence properties of manganese ions and the success of manganese doped phosphors benefit the continuous study on the luminescence properties of manganese ions. In this paper, cluster structures and component-related luminescence properties of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions in the Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " doped metal chalcogenide cluster-based semiconductors are reviewed. Metal chalcogenide cluster-based semiconductors with precisely structure in atomic level, provide an ideal model for exploring the precise \"structure-property relationship\" corresponding to the luminescence of Mn " }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions. In the Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " doped metal chalcogenide cluster-based semiconductors, the difference of bond length near Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions and the assembly mode of clusters determine the change of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " coordination field intensity, further affect the change of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ion emission wavelength. In the Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " doped metal chalcogenide nanoclusters, the aggregation form of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions and the number of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions in the aggregate determine the magnitude of Mn-Mn coupling interactions, which directly affect the luminescence efficiency, lifetime, and excitation characteristics of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "金属硫族化合物" } ], [ { "name": "text", "data": "锰掺杂" } ], [ { "name": "text", "data": "半导体" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "metal chalcogenides" } ], [ { "name": "text", "data": "manganese doping" } ], [ { "name": 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"data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。传统胶体量子点尺寸分散、表面原子结构不规则、纳米晶核与表面配体界面结构不清晰、缺陷/杂质位随机分布。而MCSC拥有更为精细的结构特点，如达到原子级别的尺寸均一性、结构精确、掺杂原子分布有序。金属硫族簇基半导体这些特性为广泛而深入地理解局部精确结构与位置/尺寸依赖特性之间的联系提供了可靠模型。加州大学河滨分校冯萍云教授课题组在该研究领域做出了重要贡献" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R6", "R7", "R8", "R9", "R10", "R11" ], "text": "6-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，苏州大学吴涛教授课题组则在金属硫族簇基半导体功能化领域开展了一系列的工作" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R12", "R13", "R14", "R15", "R16", "R17", "R18", "R19", "R20" ], "text": "12-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "Ⅱ-Ⅵ族半导体体相材料(a)、量子点(QDs)(b)与T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "型金属硫族超四面体团簇(MCSC)(c)的演化关系图;(d)~(e)T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "团簇较QDs在原子级精确掺杂合成化学中的结构优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Evolutionary relationship of bulk Ⅱ-Ⅵ semiconductor(a), Ⅱ-Ⅵ group QD(b), and T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-type MCSC(c). (d)-(e)Structural advantages of the T " }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": " cluster over QDs in developing atomically precise nanochemistry" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351671&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351680&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351674&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "金属硫族簇基半导体中多变的团簇尺寸、组分及团簇组装方式为这类材料光电性能的精确调控提供了便利。杂质原子的引入能实现金属硫族簇基半导体的精确掺杂，这利于精确“构效关系”的研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在常见的过渡金属掺杂剂中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "独特的光学、磁学性能使其成为半导体掺杂领域的重点研究对象" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } } ], "rid": [ "R21", "R22", "R23", "R24", "R25", "R26", "R27" ], "text": "21-27", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以团簇尺寸、组分及团簇组装方式各异的金属硫族簇基半导体为掺杂主体，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在主体晶格内展现出与掺杂位点、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集方式、团簇组装方式紧密相关的发光特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } } ], "rid": [ "R28", "R29", "R30", "R31", "R32", "R33", "R34", "R35" ], "text": "28-35", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些精确“构效关系”的建立为揭示Ⅱ-Ⅵ族半导体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光规律提供了更为直接的研究方法。锰离子在不同介质中的发光规律已被广泛研究，锰离子的价态及发光特性在不同掺杂主体中不尽相同" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R36", "R37", "R38", "R39" ], "text": "36-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，已有理论模型可初步预测不同基质中锰离子的发光特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } } ], "rid": [ "R40", "R41" ], "text": "40-41", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因而在介绍有关Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族簇基半导体的研究工作之前，有必要对不同介质中锰离子发光的研究进展及主要发光规律作简要介绍，这有助于我们理解Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在金属硫族簇基半导体中的发光机理及调控特性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "随着固态照明技术的出现，具有特定发光性能的荧光材料受到越来越多科技工作者的重视。其中，金属离子掺杂发光技术引领了一系列新型荧光粉的开发和商用化。对无稀土荧光粉的商业需求使得锰离子掺杂荧光粉的研究逐渐成为发光领域的研究热点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R36", "R37", "R38", "R39" ], "text": "36-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年来，对各类锰离子发光体系持续深入的研究使得锰离子新的发光特性与应用不断涌现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } } ], "rid": [ "R42", "R43", "R44", "R45", "R46", "R47", "R48", "R49", "R50" ], "text": "42-50", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "锰离子常见的掺杂主体包括氧化物、卤化物、硫化物等。氧化物组分、结构变化多样，其掺杂的锰离子可发射绿光、黄光、橙光、红光。卤化物中锰离子的掺杂主要集中在氟化物，其掺杂的锰离子主要发射橙光、红光或近红外光。这两类掺杂主体是商用荧光粉的重要载体，它们的重要特征是锰离子常常存在于体相晶格中。已有较多研究者对锰离子掺杂的不同荧光粉材料作了详细的综述报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R36", "R37", "R38", "R39" ], "text": "36-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，以锰离子为发光中心的锰配合物亦受到了广泛的关注，南京邮电大学的赵强等对发光二价锰配合物的合成方法、特性及其在光电领域的应用作了相应的总结" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着卤化物钙钛矿光电材料研究的兴起，锰离子掺杂的研究主体逐渐由氟化物向其他结构的卤化物转变。伴随主体结构的变化，掺杂锰原子由氟化物中的四价变为二价" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } } ], "rid": [ "R42", "R43", "R44" ], "text": "42-44", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。特殊情况下，卤化物体系中锰离子由占比较少的杂质原子可转变为完全占据主体晶格的原子，最终形成特殊的锰配合物" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } } ], "rid": [ "R49", "R50" ], "text": "49-50", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "锰离子的各类掺杂主体中，氧化物、硫化物中锰离子与硫族元素形成共价键，而卤化物中锰离子则与卤素离子形成离子键。基于应用需求，锰掺杂的氧化物荧光粉多采用固相反应合成，而氟化物荧光粉多采用湿化学方法合成，合成方法决定了这两类材料的研究以体相为主。金属硫族化合物本征的半导体特性是其成为发光领域研究热点的重要原因。与氧化物相比，金属硫族化合物结构相对单一，其研究对象往往集中在具有闪锌矿或纤锌矿结构的Ⅱ-Ⅵ族半导体，且这些化合物中金属离子仅形成四配位的结构。此外，它们具有比氧化物更窄的禁带宽度，能够有效降低实现锰离子发光时激发主体材料所需的能量。有关金属硫族化合物的研究集中在尺寸、组分依赖的发光性能调控方面，相应的合成方法主要采用胶体化学法。主体晶格由体相微米尺寸延伸至纳米尺寸为锰掺杂金属硫族化合物的研究提供了更多的调控手段。此外，Ⅱ-Ⅵ族胶体纳米晶的溶液加工特性赋予了锰掺杂纳米晶更多的应用潜力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "大量研究表明发光锰离子主要以Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "两种价态存在于特定的配位环境中，此处仅讨论Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光特性。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的吸收、发光特性与其外壳层3d电子的d-d跃迁相关，其特征发光源于自旋禁阻的" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的d-d跃迁是完全禁阻的，因此Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光主要通过主体晶格与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子之间的能量转移实现。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子不仅存在于四配位的四面体(T" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ")场中，也存在于八面体(O" }, { "name": "sub", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": ")中。锰离子3d壳层电子所处的d轨道在不同晶体场中的分裂能力不同，这是实现锰离子发光性能调控的物理基础。锰离子所处的晶体场越强对应的3d轨道分裂越大，导致产生自发辐射的两个轨道能级差越小，对应的发光波长越长。根据晶体场理论，在主体晶格原子相同的情况下，O" }, { "name": "sub", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "场强度远大于T" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "场。根据主体晶格特点，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子可选择性地处于O" }, { "name": "sub", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "或T" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "场中，这使得Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光几乎囊括蓝光外的所有可见光。合肥科技大学屈冰雁等通过锰离子发射峰能量、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子与配体离子间平均键长、配体轨道能等构建了新的参数，可得到线性预测模型，这使得锰发光预测的模型更为直观" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "上述锰离子的发光特性可由Tanabe-Sugano(田边-菅野)图较好地概括，即随着晶体场强的变化(横坐标)锰离子3d电子轨道能量(纵坐标)相应地变化。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "示意了d" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在田边-菅野图上的唯象模型" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在较弱的T" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "配位场中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子主要发射绿光;在较强的T" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "或O" }, { "name": "sub", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "配位场中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子主要发射橙光、红光或近红外光。能与锰离子配位的原子众多，涉及Ⅴ-Ⅶ族元素中的N、P、O、S、Se、F、Cl、Br、I等。调节与锰离子配位原子的种类必然引起对应晶体场的变化，这在理论上可实现锰离子发光性能的调控。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "d" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " 田边-菅野图的唯象模型(颜色区域代表Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在四面体或八面体场中的相对位置)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Phenomenological model of the Tanabe-Sugano diagram for a d" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " (Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ") ion. Colored areas show relative locations of tetrahedral and octahedral Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " fields" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351688&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351699&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351693&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "锰离子掺杂荧光粉的发光是晶格中所有锰离子发光统计平均的结果，探究发光锰离子精确“构效关系”时却需要着重考虑锰离子局部的配位场环境。虽然田边-菅野图可唯象地判断锰离子在不同主体晶格中的发光波长，但是一些锰离子的发光特性却与理想的配位场模型预测结果不符。此外，田边-菅野图亦不能有效解释锰离子发光寿命、激发等相关特性。实际情况中，处于主体晶格中的锰离子发光特性不仅受配位原子的直接影响，而且受与锰离子未直接配位原子的间接影响。解释上述现象的有效方法是开发更多锰离子发光相关的体系，尽可能地建立锰离子发光相关的精确“构效关系”。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "实现锰离子发光相关的精确“构效关系”研究前提是:精确调控并表征锰离子附近的配位原子种类及结构(对称性、键长、锰离子聚集形式)。在体相硫化物或胶体纳米晶中，无法精确调控锰离子的局部配位环境。基于金属硫族簇基半导体的晶态材料可通过单晶X射线衍射(SCXRD)精确表征原子级结构与组分分布，这不仅为探究锰离子发光相关的精确“构效关系”提供了理想模型，而且为金属硫族半导体中锰离子发光性能的调控提供了实验依据。本文着重总结了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在不同金属硫族簇基半导体中的发光规律，并穿插对比了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在Ⅱ-Ⅵ族半导体纳米晶中的发光特性。根据Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族簇基半导体主体晶格特点，从结构、组分依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态对自身发光性能影响、潜在应用等三个方面作了详细的介绍。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　金属硫族簇基半导体中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　结构、组分依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "2013年，苏州大学吴涛等报道了一例具有特殊金属空位的金属硫族簇基半导体晶态材料:ISC-10-CdInS ([Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "52" } ] }, { "name": "text", "data": "(SH)" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "·[H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "-DBN]" }, { "name": "sub", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "·[H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "-PR]" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ",DBN∶1,5-二氮杂双环[4.3.0]壬-5-烯，PR:哌啶)。该材料中金属空位精确分布于以孤立团簇Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "52" } ] }, { "name": "text", "data": "(SH)" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "为重复单元的周期性晶格中(" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": ")。利用后掺杂的方式，Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "离子可在主体晶格中实现原子级精确掺杂(能用SCXRD进行结构解析)，掺杂前后ISC-10-CdInS展现出明显不同的光电流响应能力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这为锰离子发光相关的精确“构效关系”研究提供了动力。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "ISC-10-CdInS 周期性结构及其单铜掺杂示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Schematic diagram of periodic structure and monocopper doping of ISC-10-CdInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351705&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351717&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351710&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用后掺杂的方式向Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇中心金属空位引入Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子，可有效调控ISC-10-CdInS的光致发光行为。未掺杂的ISC-10-CdInS表现出缺陷相关的蓝绿光发射特性(发射峰随激发波长的变化而变化)，其最大激发为420 nm，最大发射为490 nm。随着少量Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入，ISC-10-CdInS在490 nm及630 nm处同时出现发射峰，且630 nm处的发射峰不随激发波长的变化而变化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。逐步增加Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂量，可有效抑制主体晶格相关的发光，630 nm处的发射强度随着Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的增加而提升(" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": ")。主体材料ISC-10-CdInS的荧光寿命在~10" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " ns量级，随着Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入，主体晶格缺陷相关的发光被抑制，发光形式由荧光向磷光转变。d" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光与自旋跃迁禁阻的" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁相关，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS的发光需要Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子与主体晶格之间通过能量转移的间接激发方式实现。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下ISC-10-CdInS 的光致发光特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doping level dependent photoluminescence(PL) spectra" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351722&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351733&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351728&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "ISC-10-CdInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光(630 nm)区别于其在Ⅱ-Ⅵ族半导体中的橙光(" }, { "name": "text", "data": "<" }, { "name": "text", "data": " 600 nm)发射特性。2010年，中科院高能物理所高学云等在制备MnS-CdS异质结的过程中发现，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子进入MnS-CdS异质结界面处CdS晶格中(Cd" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "半径远大于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "半径)可实现晶格应力诱导的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光(650 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，Kim等报道的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂CdS量子点的发光波长在590 nm附近" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Sarma等报道的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂CdS纳米晶保留了纳米晶的表面态发光，通过延迟荧光测试可确定Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光在620 nm附近" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Cao等则报道了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的CdS/ZnS核/壳纳米晶，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光在600 nm附近，其在核心、界面、壳层处的发光峰略微不同，调节宽带半导体ZnS的厚度可将Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光效率提升至56%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。彭笑刚教授在阿肯色大学期间报道了利用小尺寸MnSe纳米团簇为核、ZnSe为包覆壳层的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnSe的发光性能。通过调节MnSe纳米团簇大小、ZnSe包覆温度等条件，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光可在565~610 nm范围内调节。他们将150 ℃条件下ZnSe包覆产生的640 nm发射归结为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "中心离子距离较近时的Mn-Mn簇发光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnSe纳米晶中(Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "半径略小于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "半径),Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光则主要集中在橙色光区域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于过渡金属离子掺杂纳米晶的发光性能受纳米晶合成及掺杂方式的影响较大(掺杂量及分散效果)，在纳米晶中直接表征掺杂离子局部晶格的精确信息较为困难，在研究掺杂离子发光时仅能给出特定合成条件下的唯象解释。ISC-10-CdInS晶态材料中Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇的精确原子结构为我们直接探究金属硫族半导体中影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光性能的根本原因提供了理想模型。对Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇而言，中心金属空位与邻近4个S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "的距离为0.222 nm(比大多数金属硫化物的键长短)，团簇中的Cd—S键长为0.237 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。向Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇中心金属空位引入金属离子，容易在该金属离子附近产生挤压作用的晶格应力，从而增大该金属离子所处的晶体场强。事实上，体相MnS中Mn—S键长为0.242 1~0.243 8 nm，向Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇中心引入Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子，必然在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子附近产生挤压作用的晶格应力 (“化学压强”)。由于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的最大发射峰红移至630 nm，参照田边-菅野图，随着局部晶格的挤压，T" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "(MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")晶体场中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子所受真实晶体场强大小应该与O" }, { "name": "sub", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "晶体场强接近。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ISC-10-CdInS样品中，温度依赖的发射光谱可进一步验证上述结论。随着温度的降低，主体晶格整体性收缩，这同样能提升Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "附近晶体场强度，对应Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光进一步红移。当Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ISC-10-CdInS由室温降至30 K时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光峰位由630 nm进一步红移至654 nm。ISC-10-CdInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的特征发光为那些单晶尺寸较小、无法利用常规SCXRD技术表征金属硫族簇基半导体内精细原子结构的材料提供了可靠的间接表征方法。在合成ISC-10-CdInS的同构材料ISC-10-ZnInS时，因反应组分的差异导致ISC-10-ZnInS单晶尺寸较小，因而无法用常规SCXRD技术表征" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然粉末X射线衍射(PXRD)测试表明ISC-10-ZnInS具有与ISC-10-CdInS相同的堆积结构，但仍无法确定ISC-10-ZnInS中T5-ZnInS团簇是否包含中心金属空位。利用Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后掺杂的方式，ISC-10-ZnInS的发光峰位由485 nm变为625 nm。该现象与ISC-10-CdInS中掺杂Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的情况相似，因此可推断ISC-10-ZnInS中T5-ZnInS团簇包含中心金属空位，对应团簇组分为Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ISC-10-CdInS表现出独特的发光行为，但是这类材料的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量与发光效率均很低，不利于后续潜在的应用。四配位环境下Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "离子半径为0.074 nm，小于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子半径(0.080 nm)，因而ISC-10-CdInS中的金属空位更倾向于捕获Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ",Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子无法通过后掺杂的方式高效引入晶体金属空位。通过原位合成的方法，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ISC-10-CdInS发光效率可由0.5%提升至43%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。基于对MCSC结构的认识，在溶剂热原位反应的过程中，反应产物中可能同时存在如下几种团簇结构(如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "):(a)未掺杂的○@CdInS@InS(Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": ",“○”代表中心金属空位),(b)团簇中心金属空位掺杂Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的Mn@CdInS@InS(MnCd" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "),(c)团簇中心金属空位及表面部分掺杂Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的Mn@MnCdInS@InS (Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "仅为其中一种可能结构),(d)团簇中心及表面Cd" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "均被Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "占据的MnInS@InS(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": ")。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "核壳结构清晰和组分分布有序的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族超四面体Cd-In-S纳米团簇" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped metal-chalcogenide supertetrahedral Cd-In-S nanoclusters with well-defined core-shell structure and ordered composition distribution" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351749&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351759&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351755&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "溶剂热反应条件下形成○@CdInS@InS团簇时，团簇中心位置倾向于容纳半径较小的原子。在有效控制Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "前驱物投料量的前提下，可在统计意义上得到主要由Mn@CdInS@InS团簇构成的晶态材料。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "，不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下ISC-10-CdInS的实际发光性能验证了上述猜测。在控制Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "前驱物投料量的前提下，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "原位掺杂的ISC-10-CdInS样品与后掺杂样品的发光波长基本一致(原位掺杂效率更高、发光更红移)。若以反应生成的ISC-10-CdInS中○@CdInS@InS团簇所含特定金属空位数为参照标准，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的实际掺杂量在58%、101%、150%、183%、236%和320%时的最大发射波长分别为634,643,639,638,631,629 nm。原位掺杂得到的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.01" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "5.99" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇样品最大发射峰为643 nm，表明Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在晶格中已存在较大压缩应力，因此降温过程中其温度依赖的发射光谱红移现象不明显(643→647 nm, 293→10 K)。在上述研究成果的影响下，广西大学曹盛等在2020年6月报道了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂Cd-In-S胶体纳米晶的发光性质，随着Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的改变，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "相关的发射峰可由601 nm红移至643 nm。利用ZnS壳层的包覆钝化作用，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂Cd-In-S胶体纳米晶的最大光致发光效率为56%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "在激发波长为400 nm光激发下，不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量ISC-10-CdInS的光致发光光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "PL spectra of " }, { "name": "italic", "data": [ { "name": "text", "data": "in situ" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped ISC-10-CdInS with different doping level upon the excitation at 400 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351766&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351778&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351773&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "极端溶剂热反应条件下(反应中不添加Cd的前驱物),○@CdInS@InS团簇中心及表面Cd" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子均被Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子占据。元素分析及PXRD表明Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇周期性排列得到的晶态结构(ISC-10-MnInS)与ISC-10-CdInS相同。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "为特殊样品ISC-10-MnInS的光谱特征，样品在可见光区域存在吸收，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在可见光区的最大激发峰在510 nm 附近，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的最大发射峰为620 nm。结合○@CdInS@InS团簇的结构特征，以ISC-10-MnInS光谱信息为参照标准，可得到如下信息:(1)理想掺杂团簇Mn@CdInS@InS的最大发射峰应较620 nm红移(间接表明原位掺杂过程中绝大多数Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "可成功进入○@CdInS@InS团簇中心金属空位);(2)Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态的形成可打破Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "晶体场对称性实现部分d-d跃迁从而直接激发Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光。在有关Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnS薄膜的发光性能研究中发现，锰团簇的形成会降低Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位对称性从而导致Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光的红移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于ISC-10-MnInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "占据团簇表面位置的比例高于ISC-10-Mn@CdInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "占据团簇中心位置(对应更大的晶格应力)的比例，因而ISC-10-MnInS中形成锰团簇时Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光蓝移，且温度依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光红移(621→646 nm,293→10 K)比ISC-10-Mn@CdInS中更加明显。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "ISC-10-MnInS的吸收谱(黑色点线)、光致发光激发谱(红色点线)和光致发光谱(蓝色点线) " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Adsorption(black spot line), photoluminescence excitation(PLE, red spot line), and PL(blue spot line) spectra of ISC-10-MnInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351786&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351800&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351793&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "金属硫族簇基半导体中精确可知的团簇结构为晶格位置依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光性能研究提供了一系列理想平台。OCF-40-ZnGaSnS为由孤立纳米团簇T4-ZnGaSnS([Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": ")周期性排列组合得到的晶态材料。由于价态的限制，掺杂过程中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子只能取代T4-ZnGaSnS四面体团簇表面的Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " 离子(如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": ")。控制Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "前驱物投料比例，在统计意义上可获得主要由[Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "MnGa" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "、[Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "、[ZnMn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "、[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": " 4种Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂纳米团簇构成的OCF-40晶态材料。其中，基于[Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "MnGa" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "团簇的样品在室温下发射红光(625 nm)，基于[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "团簇的重掺杂样品在室温下发射波长为641 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。T4-ZnGaSnS晶格中Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Ga" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "、Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "离子半径分别为0.074,0.061,0.069 nm，而Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子半径为0.080 nm。[Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "MnGa" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "团簇中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "取代Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "产生晶格应力，因而Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的OCF-40团簇比Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的Ⅱ-Ⅵ族半导体Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光波长更长，[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "团簇中大量离子半径较小的Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "被Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "取代产生比[Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "MnGa" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "更为明显的红移现象。[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "团簇中形成的(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": ")-Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "团簇具有比部分掺杂的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "更高的对称性及晶格应力，相应样品的发光对温度的敏感性相对较低。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "超四面体硫族纳米团簇[Z" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351806&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351817&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351811&type=" } } } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "=1~4)的结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Structure of supertetrahedral chalcogenide [Z" }, { "name": "sub", "data": [ { "name": "text", "data": "4-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "-Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "12-" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "=1-4) nanocluster" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351823&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351850&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351829&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的Ⅱ-Ⅵ族金属硫族半导体中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的主体晶格往往具有连续性，即使在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的纳米晶中，多数掺杂主体尺寸也能达到10 nm左右。对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体而言，其掺杂主体团簇尺寸仅为~2 nm，绝大多数Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子处于团簇晶格表面。由于团簇的连接方式不同对主体晶格中的键长键角存在影响，因而独立团簇中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的配位环境也可能受到金属硫族簇基半导体中团簇组装方式的影响。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "是以[Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "14-" } ] }, { "name": "text", "data": " (T4-ZnInS)团簇为基本构筑单元组装而成的两类二维金属硫族簇基半导体材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中OCF-98-ZnInS由T4-ZnInS共顶角连接的方式形成平面型层状结构(F-T4-Zn)，而OCF-99-ZnInS中T4-ZnInS以共顶角连接形成扭转平面型层状结构(T-T4-Zn)。由于T4-ZnInS团簇扭转角度的差异，导致对应团簇晶格内金属原子所受晶格应力不同。溶剂热反应中以Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "前驱物替代Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "前驱物，可得到具有相同结构特征的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光样品OCF-98-MnInS(F-T4-Mn)和OCF-99-MnInS(T-T4-Mn)。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "OCF-98-ZnInS((a)、(c)、(e))和OCF-99-ZnInS((b)、(d)、(f))的二维结构特点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "2D structure of OCF-98-ZnInS((a), (c), (e)) and OCF-99-ZnInS((b), (d), (f))" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351855&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351865&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351861&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "T4-MnInS([Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "14-" } ] }, { "name": "text", "data": ")团簇组装方式的差异使得F-T4-Mn在室温下的最大发射峰为618 nm，而T-T4-Mn的最大发射峰为628 nm。此外，F-T4-Mn及T-T4-Mn中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子表现出不同的环境响应发光(" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": ")。在真空环境下，F-T4-Mn的最大发射波长由618 nm红移至622 nm,T-T4-Mn的最大发射波长由628 nm蓝移至617 nm。真空环境下随着样品温度的降低，F-T4-Mn的最大发射波长由622 nm红移至652 nm,T-T4-Mn的最大发射波长由617 nm红移至644 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂在非真空条件下、真空条件下室温(298 K)及低温(63 K)时的光致发光特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "Summary of the room-temperature(298 K) and low-temperature(63 K) PL emissions for vacuum-treated and non-vacuum-treated Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped samples" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351872&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351882&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351877&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "金属硫族簇基半导体亦可通过团簇共顶点连接的方式自组装形成三维结构，以T4-MnInS团簇为基本构筑单元共顶点自组装得到的三维结构MCOF-5在室温下的最大发射峰为619 nm，而以T4-MnInS为基本构筑单元、以[Sb" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "]为桥连单元自组装形成的三维结构MCOF-6在室温下的最大发射峰为611 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "为由T4-MnInS和T5-MnInS([Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "27" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "17-" } ] }, { "name": "text", "data": ")两种不同尺寸团簇通过顶点" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "周期性连接而成的三维框架结构OCF-45，其与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的最大发射峰为633 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "拥有单重金刚石网络特征的三维开放框架结构OCF-45，橙色团簇代表T4-MnInS([Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": "-S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "14-" } ] }, { "name": "text", "data": ")，靛蓝色团簇代表T5-MnInS([Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "27" } ] }, { "name": "text", "data": "-S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "17-" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "Three-dimensional open-framework structure of OCF-45 with single diamond net, orange cluster: T4-MnInS([Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "35" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "14-" } ] }, { "name": "text", "data": "), indigo one: T5-MnInS([Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "27" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "17-" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351888&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351898&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351892&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "OCF-45拥有未穿插的单重金刚石网络结构，去除有机阳离子模板剂，其理论孔隙率达81%。相对柔性的框架结构使得OCF-45温度依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发射峰偏移达30 nm(633→663 nm,293→23 K)。以T4-MnInS为考察对象可发现团簇不同连接方式对独立团簇中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光性能的影响规律如下:(1)团簇以应力较大的方式组装时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光容易向长波方向移动(T-T4-Mn,Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ":628 nm;MCOF-5,Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ":619 nm;含T4-MnInS结构OCF-45,Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ":633 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(2)团簇以应力较小的方式组装时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光容易向短波方向移动(F-T4-Mn,Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ":618 nm;MCOF-6,Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ":611 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "与Ⅱ-Ⅵ族半导体纳米晶相比，金属硫族簇基半导体的团簇尺寸较小且作为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂主体的团簇类型选择有限(主要集中在T4、T5两类结构)。2018年，苏州大学吴涛教授课题组成功合成了由更大尺寸的超四面体团簇T6-ZnInS([Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "25" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "31" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "84" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "25-" } ] }, { "name": "text", "data": ")共顶点连接而成的二维晶态材料OCF-100，这使得团簇尺寸依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光特性研究对象得以拓展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以Zn-In-S体系为例，随着Zn-In-S团簇尺寸的增大，Zn-In-S团簇表现出如下特性:(1)团簇内部原子数增多;(2)团簇晶格中特殊金属位点增多;(3)团簇核心ZnS碎片尺寸增大，如T4-ZnInS团簇核心仅为Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S,T5-ZnInS团簇核心为Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ",T6-ZnInS团簇核心则变至Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "(" }, { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": ")。团簇晶格中特殊金属位点的增多可为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂提供更多的特殊位点。这些位点的差异主要表现为团簇核心与表面Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "数量的差异(" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": ")，核心Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "原子与4个" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "桥连，表面Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "原子则与1个" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "桥连和3个" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "桥连。团簇中与" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "桥连的主体晶格原子种类不同可改变" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "与Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的成键特征(键长与键角),Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子取代Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子时则对应影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂位点的局部晶体场强。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "理想T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-ZnInS团簇中涉及Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位环境的结构特点" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Structural characteristics of Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " coordination environment in the deal T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-ZnInS nanocluster" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "团簇" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "核心Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "数量" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "表面Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "数量" } ] }, { "colspan": "2", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "桥连特征及数量" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "桥连形式" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "T4" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "0" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "1" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "12" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Zn" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "T5" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "1" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "12" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "36" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Zn" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S, InZn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" } ] } ], [ { "colspan": "1", "rowspan": "2", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "T6" } ] }, { "colspan": "1", "rowspan": "2", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4" } ] }, { "colspan": "1", "rowspan": "2", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "24" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "10" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "40" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Zn" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S, InZn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S, Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351906&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351903&type=" } } }, { "name": "fig", "data": { "id": "F12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "理想T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-ZnInS结构及其对应的Zn-S核心特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.12" } ], "title": [ { "name": "text", "data": "Ideal T" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-ZnInS and the corresponding Zn-S core" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351909&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351918&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351914&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "前期在有关Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-ZnInS的研究中已证明，将Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子引入Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇核心时可得到最大发射波长625 nm的光致发光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，向含有大量内部晶格原子的Ⅱ-Ⅵ族半导体纳米晶掺杂Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子时，样品大概率发橙光(580~600 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } } ], "rid": [ "R60", "R61", "R62", "R63" ], "text": "60-63", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，可以预测团簇尺寸的变化有利于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光性能的调控。如" }, { "name": "xref", "data": { "text": "图13", "type": "fig", "rid": "F13", "data": [ { "name": "text", "data": "图13" } ] } }, { "name": "text", "data": ",T6-ZnInS团簇中核心原子附近的Zn—(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S)键长为0.230 0~0.236 9 nm、(Zn/In)—(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S)键长为0.239 9~0.242 4 nm，团簇表面原子附近的(Zn/In)—(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S)键长为0.228 4~0.243 0 nm、In—(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-S)键长为0.241 7~0.253 7 nm，团簇边附近的In—(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-S)键长为0.239 8~0.249 8 nm。考虑到ZnS体相中Zn—S键长为0.234 5~0.234 9 nm，体相In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中In—(" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-S) 键长为0.243 9~0.248 1 nm,T6-ZnInS团簇表面In" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "离子受到晶格拉伸影响，而团簇核心ZnS碎片整体受到晶格压缩影响。" } ] }, { "name": "fig", "data": { "id": "F13", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图13" } ], "title": [ { "name": "text", "data": "(a)T6-ZnInS中的M—S键长;(b)仅含单个掺杂原子的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂纳米团簇可能的多面体示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.13" } ], "title": [ { "name": "text", "data": "(a)M—S bond length in T6-ZnInS. (b)Proposed polyhedron of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped NCs with one dopant" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351922&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351939&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351934&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的T6-ZnInS团簇中，通过对比" } ] }, { "name": "p", "data": [ { "name": "text", "data": "体相MnS中Mn—S键 (0.242 1~0.243 8 nm)与团簇中Zn—S键可知，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "更倾向于占据T6-ZnInS团簇表面位置。相应的发光性能测试验证了上述猜测，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子掺杂的OCF-100最高发射峰为612 nm。对由T4-ZnInS团簇构成的OCF-99而言，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的掺杂可实现621 nm的最高发射峰。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子掺杂的OCF-99随温度降低产生的发光红移量为27 nm(" }, { "name": "xref", "data": { "text": "图14(a)", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14(a)" } ] } }, { "name": "text", "data": ")，而Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子掺杂的OCF-100发光红移量仅为15 nm(" }, { "name": "xref", "data": { "text": "图14(b)", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14(b)" } ] } }, { "name": "text", "data": ")。" }, { "name": "xref", "data": { "text": "图14(c)", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14(c)" } ] } }, { "name": "text", "data": "可唯象地解释Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的OCF-99与OCF-100发光的差异。具有更大尺寸的OCF-100团簇其核心Zn—S碎片可在更大程度上实现对团簇中掺杂Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子晶格应力的缓冲。因而Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在OCF-100中所受的晶体场强偏小，对应" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁的两个轨道能级差更大，较OCF-99中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光蓝移。" } ] }, { "name": "fig", "data": { "id": "F14", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图14" } ], "title": [ { "name": "text", "data": "T4-MnZnInS(a)和T6-ZnInS(b)温度依赖的光致发光特性;(c)利用缓冲层厚度调节Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光机理示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.14" } ], "title": [ { "name": "text", "data": "Temperature-dependent PL spectra of T4-MnZnInS(a) and T6-ZnInS(b). (c)Proposed mechanism on Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " emission tuned by the thickness of “buffer cushion”" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351944&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351954&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351950&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集状态对自身发光的影响" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的各类主体晶格中必然会遇到Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子分散性的问题。以Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族半导体为例，为提升Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光效率，不仅需要增加掺杂主体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光位点，而且需要有效避免Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的聚集。受不同合成环境的影响，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的掺杂浓度无法真实反映Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光效率、寿命、激发特征等信息。这些Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光特性与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在主体晶格中的分散情况密切相关，对精确研究掺杂主体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的分散性(Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集度)具有重要意义。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.1　Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集状态对发光效率的影响" } ], "level": "3", "id": "s2b1" } }, { "name": "p", "data": [ { "name": "text", "data": "在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族半导体中，仍无法通过Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂浓度对标其发光效率，最大的原因在于无法确定、控制不同掺杂浓度下Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的聚集状态。Cao等在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的CdS/ZnS核/壳纳米晶的研究中发现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量仅为0.36%时即可实现大于40%的发光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在CdS/ZnS核/壳纳米晶核心、界面、壳层处的分布位置对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光效率影响明显。在保证0.36% Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量不变的情况下，ZnS壳层中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂位置的变化对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光效率存在直接的影响。CdS/ZnS核/壳晶格界面处Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光效率小于25%,Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在0~4.0层的ZnS壳层范围内，对应发光效率出现先增后降的趋势，在3.2层ZnS处Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "拥有53%的最高效率。彭笑刚教授在阿肯色大学期间报道了利用成核掺杂策略获得发光效率高达50%的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnSe 纳米晶" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。显然，不同合成方法中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂方式对其发光效率存在较大的影响。2016年，浙江大学彭笑刚教授课题组报道了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂浓度在2.5%~36%范围内变化的Mn∶ZnSe/ZnSe纳米晶，它们对应的发光量子效率为~(70±5)%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近期该课题组报道的Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS纳米晶对应ZnSe核心Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量为0.1%、15%和50%时的发光效率可保持在70%~90%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这两项研究结果均表明，对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光效率存在直接影响的因素不仅包含Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在主体晶格中的掺杂量，而且应该包含Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的聚集形式。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "若掺杂样品中存在比Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子与主体晶格间能量转移更快的其他衰减通道时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光效率会受到较大影响。Park等在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂纳米晶反应过程中引入Li离子对纳米晶进行表面钝化，虽然钝化前后样品的寿命未发生明显变化(2.2→3.3 ns)，但是表面钝化后Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光效率由19% 提升至43%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着合成技术的进步，在大量已报道的半导体纳米晶中，能与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子自发辐射竞争的辐射通道可被有效抑制，因此可以认为影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命的主要因素仍是Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在主体晶格中的聚集状态。探究主体晶格中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态对其发光性能的影响具有重要意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体为研究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光性能的影响同样提供了较为理想的研究平台。在有关原位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS的研究中，可直接建立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率之间的定性联系。在对其进行不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "含量的掺杂时，通过" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂结构示意图可在统计意义上确定Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂○@CdInS@InS团簇的结构信息。" }, { "name": "xref", "data": { "text": "图15", "type": "fig", "rid": "F15", "data": [ { "name": "text", "data": "图15" } ] } }, { "name": "text", "data": "对应不同批次Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS样品的发光量子产率平均值随Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子掺杂量的变化情况" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在统计意义上主要由Mn@CdInS@InS纳米团簇构成的样品(ISC-10-Mn@CdInS)发光效率高达43%，极端Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂条件下的ISC-10-MnInS发光效率仅为17%,○@CdInS@InS纳米团簇核心及表面同时存在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子时的发光效率在20%~30%变化。在统计上仅有一半○@CdInS@InS团簇金属空位掺杂时的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率却大于30%。上述结果进一步表明，直接影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率的是Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在主体晶格中的聚集状态而非Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂量。" } ] }, { "name": "fig", "data": { "id": "F15", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图15" } ], "title": [ { "name": "text", "data": "ISC-10-CdInS在不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下的发光量子产率(插图:ISC-10-MnInS在不同波长激发下的量子产率) " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.15" } ], "title": [ { "name": "text", "data": "Plot of photoluminescence quantum yield(PLQY) " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " doping level(Inset: PLQY of ISC-10-MnInS under different excitation wavelength)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351959&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351965&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351962&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为更清晰地展现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在○@CdInS@InS团簇中的聚集特性，" }, { "name": "xref", "data": { "text": "图16", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "图16" } ] } }, { "name": "text", "data": "总结了几例具有代表性的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂○@CdInS@InS团簇中对应Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态 (锰团簇)的结构示意图。四配位的孤立MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "四面体可作为其他Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体的参照。以○@CdInS@InS纳米团簇为原位掺杂的载体，在理论上可形成以下几种代表性Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体:(1)团簇核心MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "与表面MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "共顶点形成的二聚体(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": ");(2)团簇核心MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "与表面MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "共顶点形成的三聚体，根据Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在团簇表面的分散情况表现为3种代表性聚合体(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": ",Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "[I],Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": " [Ⅱ]);(3)极端掺杂情况下，ISC-10-MnInS中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子多聚体以一定占有概率存在。" } ] }, { "name": "fig", "data": { "id": "F16", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图16" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺○@CdInS@InS纳米团簇中对应Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态(锰团簇)结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.16" } ], "title": [ { "name": "text", "data": "Different structures of aggregated Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " clusters in the Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped ○@CdInS@InS nanocluster" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351968&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351974&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351971&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "受到团簇价态的限制，ISC-10-CdInS中对应○@CdInS@InS纳米团簇表面Cd" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的占有率仅为50%，因此ISC-10-MnInS中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体并非理想情况下的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "。根据纳米团簇表面Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的占据特性，ISC-10-MnInS中的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体存在Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "或Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "两种可能。由于团簇中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "连接方式的差异，Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "包含2个Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "三聚体和3个Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": " [Ⅱ]三聚体，Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "包含1个Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体、2个Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "三聚体和1个Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": " [Ⅱ]三聚体。ISC-10-MnInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂量为20%，对应聚集度≥4个Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体的聚体状态。在○@CdInS@InS团簇中全部金属空位被掺杂的情况下，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂量为2.85%，对应孤立的MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "四面体。基于上述Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子分散特性下的发光效率可知:(1)尽可能地避免Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的团聚利于获得较高的发光效率;(2)Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集不严重时也能获得可观的发光效率(" }, { "name": "text", "data": ">" }, { "name": "text", "data": "20%)，例如Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "以小于Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体的形式分散于主体晶格中。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在现有Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体中，仍无法直接获得一系列不同聚集状态的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体。在统计意义上Mn@CdInS@InS团簇中均以孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子形式存在，但在实际样品中仍存在一定比例的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体。ISC-10-Mn@CdInS及ISC-10-MnInS在室温下与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子有关的电子顺磁共振 (EPR)测试表明，ISC-10-Mn@CdInS未能完整展现出孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "精细分裂相关的特征峰(说明存在聚集的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子)，而ISC-10-MnInS仅展现出一个单一的宽峰(" }, { "name": "xref", "data": { "text": "图17", "type": "fig", "rid": "F17", "data": [ { "name": "text", "data": "图17" } ] } }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体中，唯一确定Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集状态的是Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351977&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351985&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351981&type=" } } } ] }, { "name": "text", "data": "四聚体，它们存在于OCF-40-MnGaSnS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 、OCF-98/99-MnInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、OCF-45-MnInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对应晶格中。OCF-40-MnGaSnS发光很弱，OCF-98/99-MnInS的发光量子效率也仅为0.21%和0.77%,OCF-45-MnInS发光也较弱(未报道，通过对比OCF-98/99-MnInS样品寿命判断)。在四类材料中，OCF-40-MnGaSnS中主体元素与ISC-CdInS差异较大，无法直接确定Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351989&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351995&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351992&type=" } } } ] }, { "name": "text", "data": "四聚体是导致Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率低的主要原因。OCF-45-MnInS拥有三维结构，OCF-98/99-MnInS拥有不同的二维结构，因此也无法直接确定Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351999&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352007&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352004&type=" } } } ] }, { "name": "text", "data": "四聚体是导致Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率低的主要原因。当然，从ISC-10-MnInS可能的聚集状态及其他四种样品中Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352011&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352019&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352015&type=" } } } ] }, { "name": "text", "data": "四聚体的发光特性可得出如下结果:(1)在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的半导体中，避免Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352023&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352034&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352027&type=" } } } ] }, { "name": "text", "data": "四聚体的产生有利于获得较高的发光效率;(2)存在较小聚集状态的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体或Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "二聚体时，保持这些聚集体的分散性是获得较高发光效率的基础。彭笑刚教授课题组报道的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂Mn∶ZnSe/ZnSe纳米晶中，对比Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量为14.6%~26%的纳米晶与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量为20%的ISC-10-MnInS样品对应的发光效率可知，在有效控制Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "或Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "等Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体分散性的情况下，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的样品同样可以获得较高的发光效率。" } ] }, { "name": "fig", "data": { "id": "F17", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图17" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.01" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "5.99" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "和ISC-10-MnInS的EPR谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.17" } ], "title": [ { "name": "text", "data": "EPR spectra of Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.01" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "5.99" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": " and ISC-10-MnInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352039&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352050&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352044&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.2　Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态对发光寿命的影响" } ], "level": "3", "id": "s2b2" } }, { "name": "p", "data": [ { "name": "text", "data": "受Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态影响的另一个发光性能为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光寿命。根据Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光物理原理，自旋禁阻" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁的寿命在毫秒量级，但是Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的Ⅱ-Ⅵ族半导体寿命却在纳秒至毫秒量级之间变化。早期报道的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnS纳米晶寿命在纳秒级，比对应Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂体相材料的毫秒级寿命快5个数量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随后，Bol等报道了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ZnS纳米晶发光寿命不是纳秒级而是毫秒级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Suyver等在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnSe纳米晶中发现随着Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的增加，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光效率提升，但发光寿命降低(290→190 μs)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。 Kim等在有关Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的CdS纳米晶中发现:未掺杂的纳米晶寿命为几百纳秒，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的纳米晶寿命提升至微秒级别" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Sarma等报道了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的CdS纳米晶中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光寿命在毫秒量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。高学云等在MnS-CdS异质结纳米晶的研究中发现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光寿命仅为~10 ns" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率研究中的情况相似，我们同样无法通过Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂浓度对标其发光寿命。这受限于金属硫族纳米晶合成及掺杂控制(掺杂量及分散效果)的不确定性。近年来，彭笑刚教授课题组有关Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnSe纳米晶的研究为控制Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在主体晶格中的聚集状态提供了可行的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } } ], "rid": [ "R64", "R65" ], "text": "64-65", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该合成方法可在保持特定Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体分散性的前提下，将Mn∶ZnSe/ZnSe纳米晶中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂浓度由2.5%提升至36%。如" }, { "name": "xref", "data": { "text": "图18", "type": "fig", "rid": "F18", "data": [ { "name": "text", "data": "图18" } ] } }, { "name": "text", "data": "，不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的Mn∶ZnSe/ZnSe 纳米晶均以单指数的方式衰减，这表明Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的纳米晶中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的聚集态均一性得到了有效的调控" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另一例有关Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS纳米晶研究中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量为0.1%、15%和50%时发光寿命分别为1 042,241,85 μs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该结果同时表征了不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下的EPR信号，在0.1%的掺杂量下，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "表现出与孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "原子相同的超精细结构，较高Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下EPR仅展现出一个单一的宽峰，随着掺杂量的增大，峰与峰之间的距离(线宽Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": ")随之增大。上述文献已表明对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命存在直接影响的因素不仅包含Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在主体晶格中的掺杂量，而且包含Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的聚集状态。" } ] }, { "name": "fig", "data": { "id": "F18", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图18" } ], "title": [ { "name": "text", "data": "不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "含量Mn∶ZnSe纳米晶的发光衰减曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.18" } ], "title": [ { "name": "text", "data": "PL decay curves of Mn∶ZnSe d-dots with different amounts of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352056&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352066&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352062&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体为研究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在主体晶格中的聚集状态对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命的影响同样提供了较为理想的研究平台。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光寿命对基质中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的聚集态极为敏感，拥有不同聚集态的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂样品发光衰减曲线为多指数衰减函数。与2.2.1 中描述Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态对发光效率影响的情况一致，本部分仅着重讨论统计意义上占较大优势的 Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命之间的关系。在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后掺杂的ISC-10-CdInS研究中，虽然Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光波长表现为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "占据○@CdInS@InS团簇中心金属空位时的掺杂状态(Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "以分散形式存在)，但是对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态更灵敏的发光寿命测试表明Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后掺杂的ISC-10-CdInS样品在630 nm处的发光寿命仅为~0.5 ms，这与孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子~1 ms的发光寿命仍存在差距。对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后掺杂的ISC-10-CdInS样品进行酸洗处理后，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命提升至~1.1 ms。酸洗处理可去除后掺杂过程中吸附在○@CdInS@InS团簇表面或ISC-10-CdInS晶体表面的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子及其聚集态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态同样敏感的EPR测试也表现出类似的现象。酸洗后Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后掺杂ISC-10-CdInS样品由单一的宽峰(Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子存在聚集)变为与孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子类似的超精细结构。当然，从数量级的角度考虑Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子主要聚集态与发光寿命之间的联系，~0.5 ms的寿命已足够做出比较合理的统计学分析。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "仍以原位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS的研究结果为例，结合" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图16", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "图16" } ] } }, { "name": "text", "data": "中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂结构和Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态示意图，可直接建立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命之间的联系。正如前文所述，在原位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ISC-10-CdInS样品中不可避免地存在各种Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态，但这仍不影响我们从统计的角度建立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态与发光寿命的联系。" }, { "name": "xref", "data": { "text": "图19", "type": "fig", "rid": "F19", "data": [ { "name": "text", "data": "图19" } ] } }, { "name": "text", "data": "为ISC-10-Mn@CdInS与ISC-10-MnInS的发光衰减曲线，以及不同批次Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS样品的发光寿命平均值随Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的变化情况(Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量在低于300%时发光寿命大于300 μs)。在统计意义上主要由50% Mn@CdInS@InS团簇构成的ISC-10-Mn@CdInS发光寿命为~1 ms，极端Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂条件下的ISC-10-MnInS的发光寿命仅为~60 μs。虽然ISC-10-Mn@CdInS发光衰减通道中不可避免地存在与ISC-10-MnInS近似的衰减通道，但Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量较低时孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的衰减特征仍占决定性的比例。基于ISC-10-MnInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的聚体态特征，可以在统计意义上得出如下结论:Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体中存在5个互相连接的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "z" } ] } ] }, { "name": "text", "data": "三聚体时，其发光寿命与60 μs接近。考虑到Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "容易优先占据○@CdInS@InS团簇中心金属空位，在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量较大时(" }, { "name": "text", "data": ">" }, { "name": "text", "data": "200%)，在统计上○@CdInS@InS团簇表面必定存在1~2个Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子，那么可以进一步得出结论:(1)Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体中存在分散的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "二聚体时其发光寿命必定在350 μs以上;(2)Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体中存在分散的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体时其发光寿命很大可能达到350 μs以上。" } ] }, { "name": "fig", "data": { "id": "F19", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图19" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.58" } ] }, { "name": "text", "data": "C" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352071&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352078&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352074&type=" } } } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": " 和 ISC-10-MnInS的发光衰减曲线(插图:ISC-10-CdInS在不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下的寿命)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.19" } ], "title": [ { "name": "text", "data": "PL decay curves of Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.58" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "6.42" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": " sample and ISC-10-MnInS(Inset: plot of lifetime " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " doping level)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352083&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352092&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352088&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "明确存在Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352097&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352107&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352102&type=" } } } ] }, { "name": "text", "data": "四聚体的OCF-40-MnGaSnS、OCF-45-MnInS、OCF-98/99-MnInS样品中，它们的发光寿命分别为42,21,4.63,19.60 μs。由于这些含Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352110&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352119&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352114&type=" } } } ] }, { "name": "text", "data": "四聚体的团簇存在于各种维度的结构中，因此可以初步得出结论:Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体中存在Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体(即使处于分散状态)，其发光寿命应该较短(" }, { "name": "text", "data": "<" }, { "name": "text", "data": "50 μs)。基于这些Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体结构信息和对应的发光寿命，" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "列举了锰掺杂ZnSe纳米晶中不同寿命下对应锰聚集态可能的统计特性。发光寿命为241 μs的15% Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS纳米晶中必定存在大量分散的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3.20" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "3.80" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "," }, { "name": "text", "data": ">" }, { "name": "text", "data": "350 μs);发光寿命为85 μs的50% Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS纳米晶中必定存在大量未完全分散的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体(ISC-10-MnInS,~60 μs)。发光寿命为560 μs含71个Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的Mn∶ZnSe/ZnSe 纳米晶中必定存在主要以Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "二聚体为主的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.83" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "5.17" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "," }, { "name": "text", "data": ">" }, { "name": "text", "data": "500 μs);发光寿命为290 μs含187个Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的Mn∶ZnSe/ZnSe 纳米晶中必定存在主要以Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体为主的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集体(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3.20" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "3.80" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "," }, { "name": "text", "data": ">" }, { "name": "text", "data": "350 μs);发光寿命为100 μs和180 μs的Mn∶ZnSe/ZnSe 纳米晶中应该存在分散性不佳的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体(Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3.20" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "3.80" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "," }, { "name": "text", "data": ">" }, { "name": "text", "data": "350 μs)，但这些Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体通过配位原子共顶点连接的数量必定少于5个，且不存在Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnSe纳米晶和金属硫族簇基半导体可能的结构信息和对应的发光寿命" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Possbile stuctural information and lifetime of Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " doped metal ZnSe nanocrystal and chalcogenide nanocluster-based semiconductor" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "团簇状态" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "掺杂主体　" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "寿命/μs" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "MnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "部分聚集" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.01" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "5.99" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": 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"data": [ { "name": "text", "data": "560" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "部分聚集" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.83" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "5.17" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": ">" }, { "name": "text", "data": "500" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "部分聚集" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3.20" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "3.80" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": ">" }, { "name": "text", "data": "350" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "分散" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn∶ZnSe/ZnSe(187Mn)" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "290" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "分散" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "241" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "聚集(<5个)" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn∶ZnSe/ZnSe(337Mn)" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "180" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "聚集(<5个)" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Mn∶ZnSe/ZnSe(431Mn)" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "100" }, { "name": 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"name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "4", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] } ] }, { "colspan": "1", "rowspan": "4", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "分散" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "OCF-40-MnGaSnS" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "42" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "OCF-45-MnInS" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "21" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "OCF-98-MnInS" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "~4" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "OCF-99-MnInS" } ] }, { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "~20" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352126&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352124&type=" } } }, { "name": "p", "data": [ { "name": "text", "data": "以Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子“精确掺杂”的金属硫族簇基半导体为参考模型，以Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族半导体纳米晶为讨论对象，我们可以得出如下结论:(1)Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命更易受Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态影响(不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态的Mn∶ZnSe/ZnSe 纳米晶发光效率基本相同、但寿命差异很大);(2)Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂晶格中以孤立离子或分散的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "二聚体为主时，其发光寿命高于500 μs;(3)当Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子以2~3个互相联系的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "三聚体形式存在时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光寿命会低于200 μs;(4)当Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子以Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体形式存在时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光寿命会低于50 μs。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "当然，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族半导体中Mn-Mn之间的距离也可能影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光寿命。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子“精确掺杂”的金属硫族簇基半导体为表征Mn-Mn距离对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光性能的可能影响同样提供了理想的模型。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集状态对发光效率和寿命存在影响的本质原因为涉及偶极-偶极相互作用和自旋-交换作用的Mn-Mn耦合作用。传统Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子重掺杂的半导体中，确定Mn-Mn耦合作用主要通过统计平均的方法确定。这种缺少判断结构特征的方式无法精确获取有关四配位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的局部结构信息，使得理解控制Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率、寿命的本征机制困难重重。近期，吴涛教授课题组成功合成了两例含Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的簇基金属硫族开放框架材料(Metal chalcogenide open-frameworks,MCOFs) " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这两例MCOFs由包含Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S精确构型的T4-MnInS纳米团簇及[Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "]或[Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "]连接团簇组装而成(如" }, { "name": "xref", "data": { "text": "图20", "type": "fig", "rid": "F20", "data": [ { "name": "text", "data": "图20" } ] } }, { "name": "text", "data": ")。由于结构上的细微差异，两例材料表现出明显不同的发光性能，这为研究Mn-Mn相关的耦合作用对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光性能的影响提供了合适的研究平台。MCOF-6和MCOF-7中与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的细微差异主要在于T4-MnInS纳米团簇中[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S]核心对称性不同引起Mn-Mn距离的变化。" } ] }, { "name": "fig", "data": { "id": "F20", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图20" } ], "title": [ { "name": "text", "data": "由T4-MnInS 纳米团簇及长度可变的连接团簇构建而成的两例MOCFs(MCOF-6含[Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "]连接团簇，MCOF-7含[Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "]连接团簇)及对应[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S]配位信息(Mn-Mn 距离及 Mn-S-Mn 成键角度)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.20" } ], "title": [ { "name": "text", "data": "Two MOCFs constructed from T4-MnInS NCs and length-variable linkers([Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "] in MCOF-6 and [Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "] in MCOF-7) and detailed [Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S] coordination environments(Mn-Mn distances and Mn-S-Mn bond angles)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352129&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352135&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352133&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在室温条件下，普通光源无法激发MCOF-7发光，在激光光源激发下MCOF-7发红光(611 nm)。利用变功率的激光分别激发MCOF-6与MCOF-7,MCOF-7表现出线性增强的发光特性，而MCOF-6发光强度基本不变，这表明在室温下MCOF-7荧光猝灭的主要原因是低对称性的[Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S]核心中存在快速的非辐射能量转移通道。两类材料对应的EPR谱和磁学性能同样表现出差异。室温X波段和高频EPR测试表明MCOF-7特征线宽Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "(46.5 mT," }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "=9.148 GHz;34.0 mT," }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "=240 GHz)高于MCOF-6(19.4 mT," }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "=9.148 GHz;20.4 mT," }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "=240 GHz)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一般认为Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "增宽对应增强的偶极-偶极相互作用，而Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "变窄对应增强的自旋-交换作用。变温磁化率测试中，MCOF-6与MCOF-7也展现出不同的特性。居里-韦斯拟合结果表明，MCOF-6拥有更强的反铁磁自旋-交换作用，该现象与EPR测试结果一致。基于上述信息，该研究结果表明，在包含Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S精确构型的T4-MnInS纳米团簇中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态细微变化是导致MCOF-7荧光猝灭的诱因。相应的发光寿命验证了上述猜测(" }, { "name": "xref", "data": { "text": "图21", "type": "fig", "rid": "F21", "data": [ { "name": "text", "data": "图21" } ] } }, { "name": "text", "data": "),MCOF-7在常温下的发光寿命在皮秒级别，即使在23 K低温下其寿命也仅为0.17 ns,MCOF-6与包含T4-MnInS纳米团簇的其他金属硫族簇基半导体拥有类似的微秒级发光寿命。" } ] }, { "name": "fig", "data": { "id": "F21", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图21" } ], "title": [ { "name": "text", "data": "MCOF-6((a)，插图为0.15 ms窗口的衰减信息)和MCOF-7(b)温度依赖的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "相关发光动力学衰减曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.21" } ], "title": [ { "name": "text", "data": "Temperature-dependent Mn-related emission decay dynamics of MCOF-6(inset shows the early delay time to 0.15 ms)(a) and MCOF-7(b)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352138&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352145&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352142&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "造成Mn-Mn耦合作用中偶极-偶极相互作用和自旋-交换作用变化的结构性原因仍值得探讨。在MCOF-6/7中我们能直接观察到的结构差异为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚体团簇中键长键角的差异。从前面的讨论中，我们已了解到ISC-10-CdInS体系中表面金属原子Cd/In-Cd/In距离小于0.39 nm，当由离子半径更小的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子取代Cd" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子时可得ISC-10-MnInS。理论上ISC-10-MnInS中Mn-Mn距离比MCOF-7中Mn-Mn距离 (0.39 nm)更短，为何上述样品中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光不猝灭仍值得考虑。此外，在六配位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "八面体构成的卤化物体系中Mn-Mn的距离短至0.32 nm，但Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光仍然很强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。若认为EPR峰-峰线宽Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "对应Mn-Mn距离敏感的偶极-偶极相互作用，那么50%掺杂的Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS纳米晶样品中Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "接近100 mT(MCOF-7,46.5 mT) " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，为何Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光不猝灭?考虑到ISC-10-MnInS中可能存在Mn-Mn距离比0.39 nm更短的团簇，但其对应EPR的Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "仅为19.4 mT " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，应考虑到还存在影响Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "的其他因素或者说EPR中Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "仅能作为判断偶极-偶极作用强弱的参考。虽然Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子“精确掺杂”的金属硫族簇基半导体为我们理解Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体中部分Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光规律提供了重要帮助，但现有Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子“精确掺杂”的金属硫族簇基半导体仍存在一定的局限性，还有待更多适合研究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子“精确掺杂”构效关系化合物的合成。此外，在键长、键角等结构信息基础上需更加关注Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子电子结构，特别是Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子电子结构、掺杂主体晶格电子结构及它们之间的相互作用对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光寿命的影响。针对性的理论计算可从电子结构角度为我们理解上述发光机制提供指导性的帮助。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.3　Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态对激发特性的影响" } ], "level": "3", "id": "s2b3" } }, { "name": "p", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子“精确掺杂”的金属硫族簇基半导体除了作为研究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集状态对Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光效率与发光寿命影响的模型外，其本身也为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂Ⅱ-Ⅵ族半导体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光相关新现象的发现提供了借鉴。当我们回顾Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光相关的基础物理规律时可发现，孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子存在标准的自旋禁阻" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁，其对应的吸收可忽略不计。受制于上述基本物理规律的限制，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的激发只能通过受激主体晶格的能量转移实现。然而，在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族簇基半导体发光性能的研究中发现，随着Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的增加可直接实现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的直接激发发光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在原位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ISC-10-CdInS样品中，随着Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量的增加，ISC-10-Mn@CdInS在可见光区的吸收明显增加(" }, { "name": "xref", "data": { "text": "图22(a)", "type": "fig", "rid": "F22", "data": [ { "name": "text", "data": "图22(a)" } ] } }, { "name": "text", "data": ")，对应样品的光致发光激发谱同样在可见光区域出现明显的激发峰。除~400 nm光源激发T5-CdInS团簇实现能量转移的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光外，在~500 nm光源的激发下同样可实现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的发光(" }, { "name": "xref", "data": { "text": "图22(b)", "type": "fig", "rid": "F22", "data": [ { "name": "text", "data": "图22(b)" } ] } }, { "name": "text", "data": ")。极端掺杂样品ISC-10-MnInS对应的光致发光激发谱中，~500 nm附近的激发峰强度接近主体晶格的激发峰强(" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": ")。在波长依赖的发光效率测试中，ISC-10-MnInS最高发光效率(17%)的激发峰为510 nm，而主体晶格最大激发峰(367 nm)激发的样品发光效率仅为11%(" }, { "name": "xref", "data": { "text": "图15", "type": "fig", "rid": "F15", "data": [ { "name": "text", "data": "图15" } ] } }, { "name": "text", "data": ")。" } ] }, { "name": "fig", "data": { "id": "F22", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图22" } ], "title": [ { "name": "text", "data": "(a)不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下ISC-10-CdInS对应的Tauc 曲线;(b)光致发光激发谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.22" } ], "title": [ { "name": "text", "data": "(a)Tauc plot of " }, { "name": "italic", "data": [ { "name": "text", "data": "in situ" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped ISC-10-CdInS with different doping level. (b)Photoluminescence excitation(PLE) spectra of " }, { "name": "italic", "data": [ { "name": "text", "data": "in-situ" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped ISC-10-CdInS with different doping level" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352147&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352151&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352149&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的主体为共价化合物，无法将上述可见光区域的吸收归结为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子与有机配体间的电荷转移，因此上述吸收峰归因于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子自身的d-d跃迁较为合理。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子d-d跃迁吸收对应基态" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "(" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "S)至不同激发态(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "E(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "D)," }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "D)," }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "E(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "G)," }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "G)," }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "G)," }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "(" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "G))的跃迁。与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ZnS薄膜中锰团簇的形成会降低Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位对称性的情况类似" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态的形成同样会改变Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的配位对称性，这利于打破孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子d-d自旋禁阻的跃迁限制。" }, { "name": "xref", "data": { "text": "图16", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "图16" } ] } }, { "name": "text", "data": "已展示了ISC-10-Mn@CdInS及ISC-10-MnInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子主要聚集态的各种可能结构，这些Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态整体对称性低，相应d-d跃迁所对应的五指特征吸收峰不明显(各种Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态吸收峰重叠)，但ISC-10-MnInS的光致发光激发谱中已展现出与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "相关的五指激发峰的局部轮廓(" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": ")。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "不同于ISC-10-Mn@CdInS及ISC-10-MnInS中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态种类不明确的情况，在OCF-40-MnGaSnS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、OCF-98/99-MnInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、MCOF-6" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体中，可以确定团簇中仅存在单一的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体。单一的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集体能有效避免不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态吸收峰之间的重叠。因而，这些材料中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子d-d跃迁对应的五指特征吸收峰轮廓更为明显。" }, { "name": "xref", "data": { "text": "图23", "type": "fig", "rid": "F23", "data": [ { "name": "text", "data": "图23" } ] } }, { "name": "text", "data": "为OCF-40-MnGaSnS、OCF-98/99-MnInS中已初步显现的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子d-d跃迁所对应的五指特征吸收峰。OCF-40-MnGaSnS在低温条件下(33 K)的光致发光激发谱展现出清晰的五指激发峰轮廓，该Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体的五指激发峰与锰掺杂的OCF-40-ZnGaSnS样品中孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的激发峰相同。" } ] }, { "name": "fig", "data": { "id": "F23", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图23" } ], "title": [ { "name": "text", "data": "室温下OCF-40-ZnGaSnS和OCF-40-MnGaSnS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(a)、F/T-T4-Zn和F/T-T4-Mn(b)的紫外-可见吸收谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.23" } ], "title": [ { "name": "text", "data": "UV-Vis absorption spectra of OCF-40-ZnGaSnS and OCF-40-MnGaSnS at room temperature" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(a), F/T-T4-Zn and F/T-T4-Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " (b)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352153&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352157&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352155&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在In-S主体晶格中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在室温下同样展现出与Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子类似的局部五指光致发光激发谱特征。主体晶格中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集方式的差异可影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子激发峰强与主体晶格激发峰强的比值。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "中ISC-10-MnInS及" }, { "name": "xref", "data": { "text": "图24(a)", "type": "fig", "rid": "F24", "data": [ { "name": "text", "data": "图24(a)" } ] } }, { "name": "text", "data": "中OCF-45存在多种Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子激发峰强与主体晶格激发峰强的比值偏大。对仅含Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体的OCF-98/99-MnInS和MCOF-6(" }, { "name": "xref", "data": { "text": "图24(b)", "type": "fig", "rid": "F24", "data": [ { "name": "text", "data": "图24(b)" } ] } }, { "name": "text", "data": ")而言，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子激发峰强与主体晶格激发峰强的比值偏小。在仅含Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": "四聚体的OCF-98/99-MnInS和MCOF-6中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的光致发光激发谱含有3个明显的激发峰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。OCF-45中含有T4-MnInS和T5-MnInS两种不同尺寸的团簇，在不同Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态光致发光激发谱的影响下OCF-45仅展现出两个Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的激发峰(" }, { "name": "xref", "data": { "text": "图24(a)", "type": "fig", "rid": "F24", "data": [ { "name": "text", "data": "图24(a)" } ] } }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F24", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图24" } ], "title": [ { "name": "text", "data": "室温下OCF-45" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " (a)、MCOF-6(b)的PL和PLE谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.24" } ], "title": [ { "name": "text", "data": "PL and PLE spectra of OCF-45" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " (a), MCOF-6(b) at room temperature" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352159&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352163&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352161&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "是否能观察到Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的激发峰与主体晶格吸光系数、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的聚集程度及测试温度等因素相关。在以金属硫族纳米晶为掺杂主体的金属硫族半导体中，直接观察到Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的激发峰较为困难。如" }, { "name": "xref", "data": { "text": "图25", "type": "fig", "rid": "F25", "data": [ { "name": "text", "data": "图25" } ] } }, { "name": "text", "data": ",Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "-Mn" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Se/2ZnSe/7ZnS纳米晶仅在低温条件下(15 K)可观察到Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的部分激发峰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。即使在50%的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量下，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的ZnSe纳米晶中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的激发峰强仍较低，这很大可能是由ZnSe纳米晶自身较高的吸光系数所引起。当ZnSe纳米晶中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量降至0.1%时，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子相关的激发峰消失。上述研究结果进一步验证了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "聚集态的形成可改变Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位对称性及相关d-d自旋禁阻跃迁限制的事实。因此，我们认为，有目的性地合成以特定Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集态为掺杂客体的Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体材料，有利于突破孤立Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子掺杂的金属硫族半导体中只能通过主体晶格激发实现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光的限制。大量这类样品的合成必定有利于我们深入理解和调控Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光，同时有利于拓展Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光相关的新应用。" } ] }, { "name": "fig", "data": { "id": "F25", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图25" } ], "title": [ { "name": "text", "data": "3种代表性d-dots在低温下(15 K)的PLE谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.25" } ], "title": [ { "name": "text", "data": "PLE spectra of the three typical samples of d-dots at 15 K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352165&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352169&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352167&type=" } ] } } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族簇基半导体的潜在应用" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体为探究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光的精确“构效关系”提供结构模型的同时也展现出一定的应用潜力。在具有固定金属空位的ISC-10-CdInS研究中已发现离散在主体晶格中的金属空位是Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "等金属离子的理想掺杂位点。由于一个金属空位只能容纳一个金属离子，在对ISC-10-CdInS进行Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺杂时，实际得到的样品能有效避免Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发光中心的相互干扰，这为多金属掺杂荧光粉的开发提供了很好的借鉴。对ISC-10-CdInS进行Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺杂或将ISC-10-CdInS和单独掺杂样品ISC-10-Cu@CdInS、ISC-10-Mn@CdInS按一定比例混合，在控制掺杂量和混合比例的情况下均可实现基于改性ISC-10-CdInS的白光发射。如" }, { "name": "xref", "data": { "text": "图26", "type": "fig", "rid": "F26", "data": [ { "name": "text", "data": "图26" } ] } }, { "name": "text", "data": "，利用发光波长为400 nm的发光二极管光源激发混合有ISC-10-CdInS、Cu(10%)掺杂ISC-10-CdInS和Mn(100%)掺杂ISC-10-CdInS的样品可实现暖白光发射。Cu(5%)∶Mn(50%)共掺杂的ISC-10-CdInS样品同样具有暖白光发射特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F26", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图26" } ], "title": [ { "name": "text", "data": "不同掺杂ISC-10-CdInS在色坐标中的位置" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.26" } ], "title": [ { "name": "text", "data": "CIE chromaticity positions for several doped ISC-10-CdInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352171&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352176&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352173&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的金属硫族簇基半导体除了在传统的荧光粉领域具有应用外，也可用于电化学发光试剂的开发。在ISC-10-CdInS及ISC-10-Mn@CdInS样品中，存在反位金属、金属空位、掺杂原子等一系列缺陷位。通过对比ISC-10-CdInS及Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS样品的结构、光致发光、电致发光(ECL)数据，可确立这些缺陷位相关的ECL机理。其中，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在共反应剂参与的情况下拥有明显的ECL特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以ISC-10-ZnInS为主体晶格，利用原位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的方式可得到光致发光效率比原位Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂ISC-10-CdInS更高的红色荧光粉。以Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.36" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "5.64" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "团簇为电化学发光体可以实现高达~27%的ECL效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图27", "type": "fig", "rid": "F27", "data": [ { "name": "text", "data": "图27" } ] } }, { "name": "text", "data": "，该样品的ECL机理与ISC-10-Mn@CdInS类似，Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在氧气参与下的ECL特性为溶解氧的检测提供了有效的检测方法。滴涂有Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1.36" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "5.64" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "28" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "56" } ] }, { "name": "text", "data": "的玻碳电极可通过ECL强度对在0.68~19.6 mg/L范围内的溶解氧进行线性检测。" } ] }, { "name": "fig", "data": { "id": "F27", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图27" } ], "title": [ { "name": "text", "data": "原位锰掺杂ISC-10-ZnInS样品中的ECL辐射路径" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.27" } ], "title": [ { "name": "text", "data": "Proposed ECL radiation paths in the " }, { "name": "italic", "data": [ { "name": "text", "data": "in situ" } ] }, { "name": "text", "data": " Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "-doped ISC-10-ZnInS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352179&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352184&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352182&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文综述了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族簇基半导体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光特性。金属硫族簇基半导体原子级的精确结构使得在原子、分子尺寸探究Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光的精确“构效关系”成为可能。在金属硫族簇基半导体中，不仅可直接观察到掺杂Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子在不同团簇中局部晶格环境的变化，而且能通过团簇连接方式的差异实现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子整体晶格应力的调控。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子周边不同的晶格应力决定了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位场强的变化，进而影响相应Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的发光峰位。在金属硫族簇基半导体中对团簇组分进行调控，可实现Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子的“可控”聚集。这些金属硫族簇基半导体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集形式各异且各聚集态中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子数量也存在差异。Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子聚集形式和聚集体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子数量的差异决定了Mn-Mn偶极相互作用的变化，这进一步影响Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光效率、寿命及激发特性。上述研究成果不仅为其他Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂金属硫族半导体中Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光性能的调控提供了借鉴，而且能进一步推动一系列新型金属硫族簇基半导体的设计与合成，它们共同为Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子发光研究的深入提供了动力。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TALAPIN D V" }, { "name": "text", "data": ", 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