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1.School of Science, Changchun University of Science and Technology, Changchun 130022, China
2.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Published:2021-2,
Received:7 December 2020,
Accepted:4 January 2021
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Cite this article
Feng-liang XIA, Kai-xi SHI, Dong-xu ZHAO, et al. Optoelectronic Performance of 2D WSe2 Field Effect Transistor. [J]. Chinese Journal of Luminescence 42(2):257-263(2021)
Feng-liang XIA, Kai-xi SHI, Dong-xu ZHAO, et al. Optoelectronic Performance of 2D WSe2 Field Effect Transistor. [J]. Chinese Journal of Luminescence 42(2):257-263(2021) DOI: 10.37188/CJL.20200374.
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