Optoelectronic Performance of 2D WSe₂ Field Effect Transistor

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "二维WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管光电性能" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Optoelectronic Performance of 2D WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " Field Effect Transistor" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "夏", "givenname": "风梁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIA", "givenname": "Feng-liang", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "夏风梁(1995－), 男, 黑龙江黑河人, 硕士研究生, 2018年于黑龙江科技大学获得学士学位, 主要从事半导体微纳米结构探测器件的研究。E-mail:1172323231@qq.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "夏风梁" } ] }, { "name": "text", "data": "(1995－), 男, 黑龙江黑河人, 硕士研究生, 2018年于黑龙江科技大学获得学士学位, 主要从事半导体微纳米结构探测器件的研究。E-mail:" }, { "name": "text", "data": "1172323231@qq.com" } ] ] } ], "email": "1172323231@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "石", "givenname": "凯熙", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Kai-xi", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "赵", "givenname": "东旭", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Dong-xu", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "云鹏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Yun-peng", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "范", "givenname": "翊", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FAN", "givenname": "Yi", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "金华", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Jin-hua", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "LI Jin-hua, E-mail: jhli_cust@edu.com", "data": [ { "name": "text", "data": "LI Jin-hua, E-mail: jhli_cust@edu.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "李金华(1977－), 女, 吉林柳河人, 博士, 教授, 博士研究生导师, 2006年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事纳米光电功能材料与器件的研究。E-mail:jhli_cust@edu.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "李金华" } ] }, { "name": "text", "data": "(1977－), 女, 吉林柳河人, 博士, 教授, 博士研究生导师, 2006年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事纳米光电功能材料与器件的研究。E-mail:" }, { "name": "text", "data": "jhli_cust@edu.com" } ] ] } ], "email": "jhli_cust@edu.com", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "长春理工大学 理学院, 吉林 长春 130022", "data": [ { "name": "text", "data": "长春理工大学 理学院, 吉林 长春 130022" } ] }, { "lang": "en", "label": "1", "text": "School of Science, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "School of Science, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室, 吉林 长春 130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室, 吉林 长春 130033" } ] }, { "lang": "en", "label": "2", "text": "State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "自石墨烯被发现以来，随着人们不断的研究和探索，越来越多具有类似结构的二维材料因其优异的光电性质相继被发现和研究。过渡金属硫族化合物（TMDs）因其丰富的物理性质而受到广泛关注。本文研究了三层二硒化钨（WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）纳米片的光电性能。利用范德华力将WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "转移到SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si衬底的Au电极上，用银浆引出背栅电极，制备了WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管，其载流子迁移率为3.42 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/（V·s）。WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管在630 nm波长下探测器响应度为0.61 A/W，器件的光响应恢复时间为1 900 ms。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Since the graphene was found, with the continuous research and exploration by people, more and more two-dimensional materials with similar structures have been discovered and studied successively due to their excellent photoelectrical properties. The widespread attention is paid to the transition metal dichaldogenides(TMDs) due to their rich physical properties. This paper researches the two-dimensional three-layer WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " photoelectric property, and transfers it to the Au electrode of SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si substrate by Van Der Waals force. Finally, the silver paste is used to extract the back gate electrode with WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " field effect transistor manufactured, whose carrier mobility is 3.42 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/(V·s). The detector response ratio of the WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " field effect transistor based on the 630 nm wavelength is 0.61 A/W and the light response recovery time is 1 900 ms." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "二维半导体材料" } ], [ { "name": "text", "data": "过渡金属硫族化物" } ], [ { "name": "text", "data": "二硒化钨" } ], [ { "name": "text", "data": "光电探测" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "two-dimensional semiconductor materials" } ], [ { "name": "text", "data": "transition metal dichaldogenides(TMDs)" } ], [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ], [ { "name": "text", "data": "photoelectric detection" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器在军事和国民经济的各个领域具有广泛应用，主要用于射线测量、光度计量等。作为沟道材料，过渡金属硫族化合物(TMDs)由于在电子学、光子学中的潜在应用，引起了学者们极大的研究兴趣。TMDs材料具有天然带隙(1~2 eV)，并且当TMDs材料从体材料厚度减少至原子层级厚度时，由于层与层之间的耦合作用和量子限域效应其带隙宽度会逐渐变大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而改变光谱探测范围。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于无机半导体材料来说，p型掺杂一直是研究的瓶颈，在实际应用中存在很多难题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "b2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而二硒化钨(WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")是一种间接带隙约为1.2 eV的半导体材料，与大多数半导体材料不同，WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "可以实现双极性输运，即电子主导和空穴主导的两种输运行为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "b3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "不仅具有高迁移率、高开关比的优异性能，可以应用于p型场效应晶体管；而且它还具有优越的光学特性使其成为光电应用的候选材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其光电探测器的光响应度在可见光范围内为10" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "~10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " A/ W，响应时间从毫秒到秒" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "b5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。传统WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管的常规制备方法是将金属电极材料蒸镀在二维材料表面，然后通过电子束光刻将电极材料刻成固定形状电极。受材料表面特性、电子束光刻深度等器件制备工艺的影响，很难同时实现器件的高响应度及快速的响应速度。例如，WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管当响应度较高时，响应时间却很长；而当响应时间很短时，响应度却很低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "研究综合性能较高的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管，使其能更广泛地应用于光电探测领域是十分重要的。本研究中采用二维材料定点转移法，利用范德华力将WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料转移到沟道为3 μm的Au叉指电极表面。器件的响应度为0.61 A/W，响应时间为1 900 ms。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "样品制备" } ], "level": "2", "id": "s2-1" } }, { "name": "p", "data": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料：首先使用3M胶带从本体晶体(SPI材料)剥离部分体材料，再使用蓝膜在3M胶带上粘取WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "体材料，然后反复对折蓝膜，破坏层间的范德华力，最终得到WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料。再置于氧化层厚度300 nm的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si衬底上, 在烘箱中60 ℃烘干20 min，待样品冷却至室温后撕下蓝膜。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管(FET)：将剥离的二维材料采用二维材料定点转移法转移到Au电极上。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "背栅电极：在SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si衬底Si的一面涂覆导电银浆，并将其压在一块ITO衬底上，最后将背栅电极用银浆引出。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "样品表征" } ], "level": "2", "id": "s2-2" } }, { "name": "p", "data": [ { "name": "text", "data": "XRD图谱测试使用的是Bruker axs D8 Focus X射线衍射仪，电压为40 kV。拉曼光谱和PL光谱测量使用的是LabRAM HR E拉曼系统，激发波长为532 nm，激光积分时间为10 s，积分次数为3次，设备的精度为0.8 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，光栅为2 500 g/mm。电学性能测量使用的仪器为Keysight B1500A。光响应测试选用氙灯作为激发光源的光谱响应系统，测试WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光电探测器在300~800 nm的光谱选择特性。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的结构及形貌表征" } ], "level": "2", "id": "s3-1" } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图 1(a)", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1(a)" } ] } }, { "name": "text", "data": "中可以看到剥离下的材料主要分为两种颜色：白色和紫色(蓝色为蓝膜残余)。二维材料体系中，根据层数一般定义2~5层为少层、6~10层为多层。通常二维材料可以通过光学显微镜观察剥离的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "材料的颜色初步判断材料的层数规模。较亮的白色材料为多层或体材料WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，而紫色材料为少层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料。扫描电镜结果(" }, { "name": "xref", "data": { "text": "图 1(b)", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1(b)" } ] } }, { "name": "text", "data": ")显示少层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料宽度约为5 μm。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "少层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光学显微镜图像(a)及扫描电镜图像(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "Optical microscope image(a) and scanning electron microscope image(b) of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " in a few layers" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971147&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971147&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971147&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过原子力显微镜测量结果可以观察到WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "形貌，其表面较均匀，并结合材料高度剖面图计算出材料与衬底间的厚度差为1.97 nm(" }, { "name": "xref", "data": { "text": "图 2(a)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(a)" } ] } }, { "name": "text", "data": ")。理论计算单层材料厚度为0.64 nm，可以判断出制备的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料厚度为3层。X射线衍射图(" }, { "name": "xref", "data": { "text": "图 2(b)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(b)" } ] } }, { "name": "text", "data": ")显示，其与六方晶系WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的PDF(#87-2418)标准卡特征峰高度一致，无多余杂峰，且半高宽较窄，可以看出剥离的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料结晶质量非常好，缺陷较少。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料的原子力显微镜图(a)、XRD图谱(b)及拉曼光谱(c)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "text", "data": "Atomic force micrograph(a), XRD atlas(b) and Raman spectrum(c) of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " two-dimensional materials." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971149&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971149&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971149&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si衬底上的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "拉曼光谱(" }, { "name": "xref", "data": { "text": "图 2(c)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(c)" } ] } }, { "name": "text", "data": ")在249.9 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和257.6 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "处有两个特征峰，分别为Se原子和W原子面内振动模式(E" }, { "name": "sub", "data": [ { "name": "text", "data": "2g" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": ")和对应的Se原子的面外振动模式(A" }, { "name": "sub", "data": [ { "name": "text", "data": "1g" } ] }, { "name": "text", "data": ")。同时在308 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "附近的位置会出现一个由于层间范德华力引起的活性峰，若为单层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "则该峰是失活的。这个范德华力引起的活性峰可以用来快速确认WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层数。拉曼光谱中范德华力的活性峰位于308.5 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，可以判断剥离的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为3层，与AFM结果相对应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的光学特性" } ], "level": "2", "id": "s3-2" } }, { "name": "p", "data": [ { "name": "text", "data": "单层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光峰位于755 nm附近，而剥离的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光峰位于890 nm附近(" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": ")，这是由于随着层数增加，层间耦合作用增大。并且层间的间接跃迁相对于直接跃迁占绝对优势。直接跃迁峰在双层、三层中不明显，从而引起峰位红移，这很好地解释了体材料发光特性是间接跃迁，而单层的是直接跃迁" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。所以随着层数的减少，WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的光学带隙变大。" } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "二维材料的PL光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "PL spectrum of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " two-dimensional materials" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971150&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971150&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971150&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的电学特性" } ], "level": "2", "id": "s3-3" } }, { "name": "p", "data": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管(FET)模型图如" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "、实物图如" }, { "name": "xref", "data": { "text": "图 4(b)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(b)" } ] } }, { "name": "text", "data": "，其中使用的WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "沟道材料宽度约为3 μm。通过观察Au-WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Au的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "曲线(" }, { "name": "xref", "data": { "text": "图 4(c)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(c)" } ] } }, { "name": "text", "data": ")的斜率可以判断WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与Au电极的接触受肖特基势垒影响较小。" } ] }, { "name": "fig", "data": { "id": "Figure4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET模型图(a)、实物图(b)及Au-WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Au的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "曲线(c)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET diagrammatic figure(a), physical map(B) and Au-WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Au " }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " curve(c)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971151&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971151&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971151&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "输出特性曲线(" }, { "name": "xref", "data": { "text": "图 5(a)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(a)" } ] } }, { "name": "text", "data": ")是指FET在特定的栅压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": ")下，源漏电流(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": ")随源漏电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": ")的变化情况，即" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "关系曲线，输出特性曲线可以反映出FET中沟道材料与器件电极材料的接触情况及栅压对器件的控制情况" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。转移特性曲线则是指特定的漏极电压下，器件的源漏电流随栅极电压的变化情况，即" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "gs" } ] }, { "name": "text", "data": "关系曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。场效应晶体管器件中最重要的参数就是载流子迁移率，其反映了电场作用下的电子(或空穴)在半导体中的迁移能力，即导电能力。其可以通过转移特性曲线(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": ")计算出来，计算公式为：" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET输出曲线(a)、转移曲线(b)及对数坐标下的转移曲线(c)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Output curve(a), transfer curve(b)and transition curve of logarithmic coordinates(c) of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971152&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971152&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971152&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "1" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971154&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971154&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971154&type=middle" } } } ], "id": "fgxb-42-2-257-E1" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "本实验中沟道长度" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "=1.8 μm；宽度" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "text", "data": "=3 μm；" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "=0.5 V；" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "为转移曲线斜率(" }, { "name": "xref", "data": { "text": "图 5(b)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(b)" } ] } }, { "name": "text", "data": ")，表示栅极电压对于源漏电流的控制强弱。栅极绝缘层" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "= " }, { "name": "italic", "data": [ { "name": "text", "data": "εε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为真空介电常数8.85×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-12" } ] }, { "name": "text", "data": " F/m，" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "为SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "相对介电常数3.9，" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "为SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "厚度300 nm。代入以上数据，计算出WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管载流子迁移率为3.42 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/(V·s)。根据转移曲线(" }, { "name": "xref", "data": { "text": "图 5(c)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(c)" } ] } }, { "name": "text", "data": ")可以观察出器件的开关比为10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的光电性能" } ], "level": "2", "id": "s3-4" } }, { "name": "p", "data": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET光电探测器的一个重要参数是响应度" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "，即探测器在光照下产生的光电流与入射光光功率的比值，它反映出器件的光电转换能力，单位为A/W(或mA/W)。计算公式为:" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "2" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971156&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971156&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971156&type=middle" } } } ], "id": "fgxb-42-2-257-E2" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "illum" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "分别为器件在光照下和无光照时的电流值，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "为光生电流值，入射光功率" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "inc" } ] }, { "name": "text", "data": "等于入射光强度" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "inc" } ] }, { "name": "text", "data": "与器件有效工作面积" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "的乘积" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图 6(a)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(a)" } ] } }, { "name": "text", "data": "为器件光电流曲线，经过计算，我们得出三层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜光电晶体管光响应度随光照功率的变化曲线，如" }, { "name": "xref", "data": { "text": "图 6(b)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(b)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同光照功率下WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET输出特性曲线(a)及光响应度随光照功率变化曲线(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Output characteristic curves(a) and curve of light response varying with the light power(b) of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET as per different light power" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971158&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971158&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971158&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对器件在1 mW光照功率照射下、不同栅压调制下的输出特性曲线变化情况进行测试对比分析，如" }, { "name": "xref", "data": { "text": "图 7(a)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(a)" } ] } }, { "name": "text", "data": "所示。由图中可以获得器件的漏极电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ds" } ] }, { "name": "text", "data": "随栅极电压的变化情况，进而通过公式(2)计算出在特定光照功率下器件的光响应度随栅压的变化情况，如" }, { "name": "xref", "data": { "text": "图 7(b)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(b)" } ] } }, { "name": "text", "data": "所示。器件响应时间主要由沟道材料及光照强度决定。在不改变光照强度及所加源漏电压强度下，器件的光响应时间基本没有变化；而器件光响应度随着栅极电压的增大接近线性增长。实现了在不牺牲器件响应时间的前提下提高器件的光响应度。" } ] }, { "name": "fig", "data": { "id": "Figure7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "1 mW光照下不同栅极电压WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET输出特性曲线(a)及光响应度随栅极电压变化曲线(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 7" } ], "title": [ { "name": "text", "data": "Output characteristic curves(a) and curve of optical response varying with gate voltage(b) of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET under 1 mW illumination based on different gate voltages" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971159&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971159&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971159&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "选用氙灯为激发光源测试了300~800 nm探测器的光谱探测范围。从响应谱(" }, { "name": "xref", "data": { "text": "图 8", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8" } ] } }, { "name": "text", "data": ")可以看出，探测器的响应度在650 nm波长下为0.61 A/W, 响应波段为450~800 nm，具有可见光区段及近红外区段的宽光谱响应范围。" } ] }, { "name": "fig", "data": { "id": "Figure8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光电探测器响应谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 8" } ], "title": [ { "name": "text", "data": "Response spectrum of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " photodetector" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971162&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971162&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971162&type=middle" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 9", "type": "fig", "rid": "Figure9", "data": [ { "name": "text", "data": "图 9" } ] } }, { "name": "text", "data": "为WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜光电探测器在532激光(5 mW)照射下的开关特性测试曲线。测试结果显示，器件的光响应恢复时间为1 900 ms。由于制备的FET所选用的沟道材料为间接带隙的少层WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜，相比于直接带隙的单层材料，其光电流的产生及衰减所用的时间有所增长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "Figure9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光电探测器开关性能" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 9" } ], "title": [ { "name": "text", "data": "Switching performance of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " photoelectric detector" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971163&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971163&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971163&type=middle" } ] } }, { "name": "table", "data": { "id": "Table1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管性能对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 1" } ], "title": [ { "name": "text", "data": "Performance comparison of WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " FET" } ] } ], "note": [], "table": [ { "head": [ [ { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "材料" } ] }, { "colspan": "4", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "晶体管性能" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "参考文献" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "载流子迁移率/" }, { "name": "text", "data": "" }, { "name": "text", "data": "(cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "器件类型" } ] } ], [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "响应度/" }, { "name": "text", "data": "" }, { "name": "text", "data": "(A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "上升时间/" }, { "name": "text", "data": "" }, { "name": "text", "data": "ms" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "下降时间/" }, { "name": "text", "data": "" }, { "name": "text", "data": "ms" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "开关比" } ] } ] ], "body": [ [ { "align": "left", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.171" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "23" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "23" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } }, { 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