Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "940 nm水平腔面发射半导体激光器设计与制备" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "术", "givenname": "玲", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHU", "givenname": "Ling", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "术玲(1995-), 女, 山东济南人, 硕士研究生, 2018年于潍坊学院获得学士学位, 主要从事半导体激光器的研究。E-mail:1457492341@qq.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "术玲" } ] }, { "name": "text", "data": "(1995-), 女, 山东济南人, 硕士研究生, 2018年于潍坊学院获得学士学位, 主要从事半导体激光器的研究。E-mail:" }, { "name": "text", "data": "1457492341@qq.com" } ] ] } ], "email": "1457492341@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "海", "givenname": "一娜", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAI", "givenname": "Yi-na", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "邹", "givenname": "永刚", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZOU", "givenname": "Yong-gang", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "ZOU Yong-gang, E-mail: zouyg@cust.edu.cn", "data": [ { "name": "text", "data": "ZOU Yong-gang, E-mail: zouyg@cust.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "邹永刚(1982-), 男, 吉林长春人, 博士, 研究员, 博士研究生导师, 2009年于吉林大学获得博士学位, 主要从事激光技术与应用、光电子器件等方面的研究。E-mail:zouyg@cust.edu.cn" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "邹永刚" } ] }, { "name": "text", "data": "(1982-), 男, 吉林长春人, 博士, 研究员, 博士研究生导师, 2009年于吉林大学获得博士学位, 主要从事激光技术与应用、光电子器件等方面的研究。E-mail:" }, { "name": "text", "data": "zouyg@cust.edu.cn" } ] ] } ], "email": "zouyg@cust.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "范", "givenname": "杰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FAN", "givenname": "Jie", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "傲", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Ao", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "", "text": "长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022", "data": [ { "name": "text", "data": "长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022" } ] }, { "lang": "en", "label": "", "text": "State Key Laboratory of High-power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "State Key Laboratory of High-power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "水平谐振腔面发射分布反馈（Surface emitting distributed feedback，SE-DFB）半导体激光器因具有更好的光束质量获得了广泛关注。本文设计了波长为940 nm的水平谐振腔面发射分布反馈半导体激光器，分析了光栅的结构参数（形状、周期、占空比、刻蚀深度等）对激光器发光特性（线宽、边模抑制比、功率及斜率效率等）的影响。结合二阶光栅、脊形波导、电极及出光口、解理封装等器件工艺，制备出发光波长为940.3 nm的水平谐振腔面发射半导体激光器，线宽为0.52 nm，连续工作模式下发射功率为890 mW。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Due to the better beam quality, horizontal cavity surface emitting distributed feedback(SE-DFB) semiconductor lasers have received widespread attention. In this paper, a horizontal cavity surface emitting distributed feedback semiconductor laser with a wavelength of 940 nm was designed. This paper analyzed the influence of the structure parameters of the grating(shape, period, duty cycle, etched depth," }, { "name": "italic", "data": [ { "name": "text", "data": "etc" } ] }, { "name": "text", "data": ".) on the optical characteristics of the laser(linewidth, side-mode suppression ratio, power and slope efficiency, " }, { "name": "italic", "data": [ { "name": "text", "data": "etc" } ] }, { "name": "text", "data": ".). Combined with the fabrication of second-order grating, ridge-shaped waveguide, electrode and light exiting, as well as cleavage and encapsulation technology, the device with optical wavelength of 940.3 nm is prepared. The line width of the device is 0.52 nm, and the surface emission power is 890 mW under continuous operation mode." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "面发射分布反馈(SE-DFB)半导体激光器" } ], [ { "name": "text", "data": "二阶光栅" } ], [ { "name": "text", "data": "光栅形貌" } ], [ { "name": "text", "data": "耦合因子" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "surface emitting distributed feedback(SE-DFB) semiconductor laser" } ], [ { "name": "text", "data": "second-order gratings" } ], [ { "name": "text", "data": "grating morphology" } ], [ { "name": "text", "data": "coupling factor" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "近年来，半导体激光器已成为光电子领域的核心器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，被广泛应用在泵浦源、光通信、激光制导和环境监测等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "b2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "b2", "b3", "b4" ], "text": "2-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "水平谐振腔面发射分布反馈半导体激光器(Surface emitting distributed feedback，SE-DFB)利用二阶光栅的衍射和反馈功能实现波长稳定性和表面发射，具有高光束质量、窄光谱线宽、波长稳定性好等显著优点。二阶光栅作为激光器的关键部分，一直是研究人员关注的焦点，主要研究手段是通过优化光栅结构以提升SE-DFB半导体激光器的输出特性。2006年，Schubert等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "b5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对输出波长100 μm的面发射太赫兹量子级联激光器进行了分析。采用的是中心π相移二阶金属光栅，该光栅可以将反对称近场图样转变为沿腔长方向的对称近场图样，从而形成双瓣变单瓣出光的远场图样。2009年, Masions等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "设计了波长5.65 μm的水平腔量子级联激光器。光栅设计为非周期光栅结构，由一个一阶光栅和一个二阶光栅组成，对垂直波导方向模式进行耦合的同时又能降低由金属引起的损耗。激光从衬底出射，温度300 K时阈值电流1.8 A，峰值功率超过10 mW，同时该器件有较高的边模抑制比。2010年，叶淑娟等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于耦合模理论，详细地分析了二阶光栅分布反馈半导体激光器出光特性。针对激射波长为1.55 μm的SE-DFB半导体激光器，研究发现光栅最佳占空比为0.43，得到外微分量子效率为47%，边模抑制比达到35 dB。2012年，Chen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了激射波长约940 nm的二阶金属表面光栅宽条型分布反馈半导体激光器，器件阈值电流为0.32 A，光谱线宽(FWHM)小于0.1 nm，斜率效率为0.6 W/A，连续工作模式下输出功率达到718 mW。2014年，Sigler等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "设计了4.6 μm波段的面发射掩埋异质结构DFB/DBR光栅耦合量子级联激光器，该光栅结构抑制器件的反对称模，同时两端的分布布拉格反射镜(DBR)光栅可以对光场和载流子分布起到束缚作用，避免不可控反射以及灾变性端面退化。器件在连续波工作时输出功率可达瓦级，远场单瓣，阈值电流小于0.45 A，斜率效率大于3.4 W/A。2015年，刘颖慧等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "设计了激射波长4.8 μm的顶部二阶金属-半导体光栅表面发射分布反馈量子级联激光器。激光衬底出射输出功率94 mW，边模抑制比约为30 dB。由此可知光栅结构可以提高半导体激光器的斜率效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，压窄光谱线宽选单纵模，提高边模抑制比，并且实现表面发射的效果。因此，研究光栅结构对SE-DFB半导体激光器光输出特性的影响尤为重要。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文设计了940 nm SE-DFB半导体激光器的二阶光栅结构参数，并通过优化光栅结构参数探索提升激光器光输出特性的方法。采用光栅周期为278 nm、占空比为0.4、刻蚀深度280 nm的矩形光栅，获得了发光波长为940.3 nm的水平腔面发射半导体激光器，线宽0.52 nm，连续工作模式下发射功率为890 mW。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "SE-DFB半导体激光器结构设计" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "SE-DFB半导体激光器工作原理" } ], "level": "2", "id": "s2-1" } }, { "name": "p", "data": [ { "name": "text", "data": "设计的SE-DFB半导体激光器结构示意图如" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "所示，" }, { "name": "xref", "data": { "text": "图 1(a)", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1(a)" } ] } }, { "name": "text", "data": "为激光器三维立体图，" }, { "name": "xref", "data": { "text": "图 1(b)", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1(b)" } ] } }, { "name": "text", "data": "为剖面图。在激光器件的P-限制层上刻蚀二阶光栅，光子穿过波导层与二阶光栅发生衍射，实现激光表面发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，利用布拉格光栅对光波进行分布反馈实现单纵模。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "光栅置于P面的SE-DFB半导体激光器结构示意图。(a)三维立体图；(b)剖面图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "Structural representation of SE-DFB semiconductor laser with grating placed on P surface. (a)Three-dimensional diagram. (b)Section view." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971084&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971084&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971084&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "二阶光栅数值分析" } ], "level": "2", "id": "s2-2" } }, { "name": "p", "data": [ { "name": "text", "data": "激光器实现光振荡是利用光栅的衍射特性，其基本原理即为光栅的衍射原理。满足光栅衍射条件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "1" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971086&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971086&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971086&type=middle" } } } ], "id": "fgxb-42-2-223-E1" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "为入射角; " }, { "name": "italic", "data": [ { "name": "text", "data": "φ" } ] }, { "name": "text", "data": "为衍射角; " }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "为整数0，1，2，3……，代表衍射级次; " }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "为入射光波长; " }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "eff" } ] }, { "name": "text", "data": "为有效折射率; " }, { "name": "italic", "data": [ { "name": "text", "data": "Λ" } ] }, { "name": "text", "data": "为光栅周期。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于二阶布拉格光栅，当波长和阶数均确定后，只有满足条件的光才会在谐振腔中形成稳定振荡。光栅周期满足：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "2" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971088&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971088&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971088&type=middle" } } } ], "id": "fgxb-42-2-223-E2" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "=2为光栅阶数，" }, { "name": "italic", "data": [ { "name": "text", "data": "Λ" } ] }, { "name": "text", "data": "为光栅周期，" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为Bragg波长，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "eff" } ] }, { "name": "text", "data": "为光栅有效折射率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "联立公式(1)、(2)得到的二阶光栅具有与入射光垂直的一级衍射光和与其方向相反的二级衍射光，如" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "所示。一级衍射光提供光输出耦合，影响表面发射耦合系数；二级衍射光用来进行光学反馈和模式选择从而影响反馈耦合系数，两个耦合系数一同影响激光器的出光特性。同时，通过增大表面发射耦合系数实现更大的主模和最低阶次模之间的阈值增益差，从而消除模式简并，达到选单纵模、稳定激光波长的目的。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "二阶光栅的衍射特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "text", "data": "Diffraction characteristics of second order grating" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971090&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971090&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971090&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "耦合系数是光栅结构中最重要的表征参数，其直接影响激光器的阈值和单模特性。对于矩形薄光栅，耦合系数" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "满足：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "3" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971092&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971092&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971092&type=middle" } } } ], "id": "fgxb-42-2-223-E3" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "4" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971094&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971094&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971094&type=middle" } } } ], "id": "fgxb-42-2-223-E4" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "为光栅刻蚀深度；" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "为光栅占空比，满足" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971140&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971140&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971140&type=middle" } } } ] }, { "name": "text", "data": "；" }, { "name": "italic", "data": [ { "name": "text", "data": "Λ" } ] }, { "name": "text", "data": "为光栅周期; Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "为折射率差，即为上波导层和上限制层的折射率差；" }, { "name": "italic", "data": [ { "name": "text", "data": "Γ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "为光栅限制因子。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过公式(3)、(4)计算得到耦合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "与" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "随占空比" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "的变化如" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": "所示。图中曲线(a)、(b)分别表示反馈耦合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和表面发射耦合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "耦合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "随占空比" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "Variation diagram of coupling coefficient " }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": " and " }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " with duty cycle " }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971095&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971095&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971095&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": "可知，" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "在" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "=0.25时取得最大值56 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，而在" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "=0.5时" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "=0，代表此时并没有光反馈，并在其附近光反馈均很弱；随着" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "从0增大到0.5，" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "也从0增大到最大值9.8 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。在SE-DFB半导体激光器中，反馈耦合和表面发射耦合必须同时存在，缺一不可。没有反馈耦合将不能产生激光，没有表面发射耦合将无法实现表面出光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。考虑到耦合系数过大会产生空间烧孔效应影响激光器的激射特性；耦合系数过小，激光器的谐振腔损耗增大导致激光器阈值电流增大。因此，针对设计的940 nm SE-DFB半导体激光器，由公式(2)确定光栅周期为278 nm，通过公式(3)、(4)及" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": "确定光栅占空比0.4，根据光栅刻蚀深度对光栅反射率大小及选单纵模的模拟选定刻蚀深度为280 nm。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "光栅结构参数优化" } ], "level": "2", "id": "s2-3" } }, { "name": "p", "data": [ { "name": "text", "data": "光栅的耦合系数同时还与光栅形貌有关，典型光栅形貌有矩形、梯形和三角形" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "联立公式(3)、(4)得到矩形光栅表面发射耦合系数公式：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "5" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971097&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971097&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971097&type=middle" } } } ], "id": "fgxb-42-2-223-E5" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "由公式(5)定义矩形光栅耦合因子：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "6" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971098&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971098&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971098&type=middle" } } } ], "id": "fgxb-42-2-223-E6" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "通常在制作SE-DFB半导体激光器时，为了提高电流注入效率，会在垂直晶向的方向腐蚀至限制层以获得脊形波导形貌，因此在进行湿法腐蚀工艺时避免不了对光栅形貌产生影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "b16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。矩形光栅是梯形光栅在倾角" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "=90°时的一个特例，当倾斜角度由90°逐渐减小到一定程度，即相比于矩形光栅的占空比从光栅顶端的0线性地变到底端的1时为三角形光栅。如" }, { "name": "xref", "data": { "text": "图 4", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4" } ] } }, { "name": "text", "data": "所示，" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "是矩形光栅结构参数图，" }, { "name": "xref", "data": { "text": "图 4(b)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(b)" } ] } }, { "name": "text", "data": "是梯形光栅结构参数图，" }, { "name": "xref", "data": { "text": "图 4(c)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(c)" } ] } }, { "name": "text", "data": "是三角形光栅结构参数图。" } ] }, { "name": "fig", "data": { "id": "Figure4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "光栅结构参数图。(a)矩形光栅；(b)梯形光栅；(c)三角形光栅。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "text", "data": "Parameter diagram of grating structure. (a)Rectangular. (b)Trapezoidal. (c)Triangular." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971101&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971101&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971101&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "采用类比矩形光栅的计算方法依次对梯形二阶光栅和三角形二阶光栅做归一化积分计算。假设梯形光栅倾斜角度为" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "，顶部宽为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "，底部为" }, { "name": "italic", "data": [ { "name": "text", "data": "Λ" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "，光栅深度均为" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "，对其" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "方向做积分得到任意倾斜角度" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "下梯形光栅耦合因子和三角形光栅耦合因子分别为：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "7" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971104&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971104&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971104&type=middle" } } } ], "id": "fgxb-42-2-223-E7" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "8" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971106&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971106&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971106&type=middle" } } } ], "id": "fgxb-42-2-223-E8" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "由公式(7)获得梯形光栅耦合因子与倾斜角度的关系图，如" }, { "name": "xref", "data": { "text": "图 5", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5" } ] } }, { "name": "text", "data": "所示。从图中看出，梯形光栅耦合因子与倾角" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "成正比关系，梯形光栅耦合因子随着倾斜角度的增大而增大。定义光栅刻蚀深度相同，计算得出倾斜角度63.6°时为三角形光栅，此时耦合因子为0.5，即为图中左边箭头所指点，与公式(8)结果相符；当倾斜角度为90°时为矩形光栅，此时耦合因子最大，结果为1，即为图中右边箭头所指点。" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "梯形光栅耦合因子与倾斜角度关系图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Relation diagram between coupling factor of trapezoidal grating and tilt angle" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971111&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971111&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971111&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "耦合因子表示该光栅结构表面耦合效率的大小，高的耦合系数可以降低激光器的阈值，同时会压窄线宽。通过分析得到耦合因子大小比较为：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "9" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971115&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971115&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971115&type=middle" } } } ], "id": "fgxb-42-2-223-E9" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "根据上述光栅结构参数，分别对矩形、梯形、三角形二阶光栅选单纵模的性能进行仿真研究。如" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "所示，" }, { "name": "xref", "data": { "text": "图 6(a)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(a)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(b)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "(b)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(c)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "(c)" } ] } }, { "name": "text", "data": "分别是矩形、梯形、三角形光栅反射率图。3种光栅均具有选单纵模作用，反射谱宽度分别为0.4，0.48，0.95 nm。由" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "可知，矩形光栅反射率最高，发光波长更接近940 nm，证明矩形光栅压窄线宽选单纵模效果更优。3种光栅选模情况与上述耦合因子影响激光器选模的结论一致。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "光栅反射率。(a)矩形光栅；(b)梯形光栅；(c)三角形光栅。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Reflectivity of grating. (a)Rectangular grating. (b)Trapezoidal grating. (c)Triangular grating." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971119&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971119&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971119&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "上述讨论比较了不同形貌的二阶光栅的耦合因子和反射率的大小，确定了矩形二阶光栅的结构参数，在制备过程中也应尽量保持光栅形貌的均匀性以确保激光器具有良好的输出特性。若制备的光栅周期、占空比、刻蚀深度改变，获得光栅侧壁不完全垂直，使得光栅形貌不均匀，则会影响激光器的输出特性，导致器件的线宽变宽，输出功率和斜率效率降低等。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.4" } ], "title": [ { "name": "text", "data": "器件结构设计" } ], "level": "2", "id": "s2-4" } }, { "name": "p", "data": [ { "name": "text", "data": "根据以上光栅参数设计优化，利用SimuPics3D软件模拟940 nm SE-DFB半导体激光器外延结构，并对光栅影响激光器输出特性的设想进行了验证。" }, { "name": "xref", "data": { "text": "表 1", "type": "table", "rid": "Table1", "data": [ { "name": "text", "data": "表 1" } ] } }, { "name": "text", "data": "为设计的940 nm SE-DFB半导体激光器的外延结构。" } ] }, { "name": "table", "data": { "id": "Table1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "940 nm SE-DFB半导体激光器外延结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 1" } ], "title": [ { "name": "text", "data": "Epitaxial structure of 940 nm SE-DFB semiconductor laser" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "层结构" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "材料" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "厚度/μm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "掺杂/cm" }, { "name": "sup", "data": [ { "name": "text", "data": 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"data": "2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": "(渐变)" } ] } ], [ { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "衬底" } ] }, { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "GaAs" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [] }, { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "模拟得到940 nm SE-DFB半导体激光器的光场分布如" }, { "name": "xref", "data": { "text": "图 7", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图 7(a)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(a)" } ] } }, { "name": "text", "data": "是光场分布三维图，" }, { "name": "xref", "data": { "text": "图 7(b)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(b)" } ] } }, { "name": "text", "data": "是光谱图，" }, { "name": "xref", "data": { "text": "图 7(c)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(c)" } ] } }, { "name": "text", "data": "为激光器光场分布三维结构图。从图中可以看出，光场主要分布在有源区及波导层附近，有源区的光场强度最大，保证了激光器的出光质量。外延设计的非对称波导结构使光场发生偏置" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "b17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，P面波导层厚度相对较小，会使光子更容易进入P限制层与该层的二阶光栅发生衍射作用。" } ] }, { "name": "fig", "data": { "id": "Figure7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "光场分布图。(a)光场分布三维图；(b)光谱图；(c)激光器光场分布三维结构图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 7" } ], "title": [ { "name": "text", "data": "Optical field distribution diagram. (a)Three-dimensional diagram of optical field distribution. (b)Spectrogram. (c)Three-dimensional structure diagram of laser optical field distribution." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971122&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971122&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971122&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在P-限制层上刻蚀二阶光栅并由脊形波导限制侧向光场，对带有不同光栅结构的940 nm SE-DFB半导体激光器进行模拟得到光谱曲线、" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线分别如" }, { "name": "xref", "data": { "text": "图 8", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "9", "type": "fig", "rid": "Figure9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图 8(a)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(a)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(b)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "(b)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(c)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "(c)" } ] } }, { "name": "text", "data": "分别对应矩形、梯形、三角形二阶光栅SE-DFB半导体激光器的光谱图，由图可知器件均在波长940 nm附近激射，边模抑制比分别是78.7，75.6，71.5 dB。" }, { "name": "xref", "data": { "text": "图 9", "type": "fig", "rid": "Figure9", "data": [ { "name": "text", "data": "图 9" } ] } }, { "name": "text", "data": "为不同光栅结构SE-DFB半导体激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线，图中(a)、(b)和(c)分别为矩形、梯形和三角形光栅SE-DFB半导体激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线。当注入电流为500 mA时，器件表面发射功率分别为643，436，281 mW，斜率效率分别为1.28, 0.87，0.57 W/A。相比之下, 矩形光栅SE-DFB半导体激光器光输出特性最佳，与上述光栅耦合因子结论一致。因此，可以通过设计优化光栅结构参数来改善940 nm SE-DFB半导体激光器的光输出特性。" } ] }, { "name": "fig", "data": { "id": "Figure8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同光栅结构940 nm SE-DFB半导体激光器光谱图。(a)矩形光栅；(b)梯形光栅；(c)三角形光栅。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 8" } ], "title": [ { "name": "text", "data": "Spectrogram of 940 nm SE-DFB semiconductor laser with different grating structures. (a)Rectangular grating. (b)Trapezoidal grating. (c)Triangular grating." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971128&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971128&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971128&type=middle" } ] } }, { "name": "fig", "data": { "id": "Figure9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "不同光栅结构940 nm SE-DFB半导体激光器" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 9" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": " curves of 940 nm SE-DFB semiconductor laser with different grating structures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971132&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971132&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971132&type=middle" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "器件制备" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "基于对光栅结构参数和外延结构的设计进行了940 nm SE-DFB半导体激光器件的制备，制备流程如下：" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(1) 外延片生长：使用金属有机化合物气相沉积(MOCVD)设备在GaAs衬底上依次生长" }, { "name": "xref", "data": { "text": "表 1", "type": "table", "rid": "Table1", "data": [ { "name": "text", "data": "表 1" } ] } }, { "name": "text", "data": "中的外延结构。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(2) 二阶光栅制备：利用电子束曝光技术和感应耦合等离子体(ICP)刻蚀技术制备二阶光栅。所得光栅SEM图形如" }, { "name": "xref", "data": { "text": "图 10", "type": "fig", "rid": "Figure10", "data": [ { "name": "text", "data": "图 10" } ] } }, { "name": "text", "data": "所示，光栅周期为279.8 nm，占空比0.4，刻蚀深度为283.8 nm。" } ] }, { "name": "fig", "data": { "id": "Figure10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "(a) 光栅表面形貌；(b)光栅截面。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 10" } ], "title": [ { "name": "text", "data": "(a)Surface topography of grating. (b)Cross section of grating." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971135&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971135&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971135&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "(3) 脊形波导制备：采用紫外曝光机和湿法腐蚀的方法制备脊形波导。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(4) 镀制SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "绝缘层：使用等离子体增强化学气相沉积(PECVD)设备镀制SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "绝缘层，厚度为268.8 nm。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(5) 镀制电极：利用磁控溅射技术溅射电极材料Ti/Pt/Au。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(6) 减薄抛光：使用自动研磨机和抛光机将外延片结构降至130 μm左右。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(7) 出光口制备：利用紫外曝光机双面对准工艺和Lift-off制备N面出光口，如" }, { "name": "xref", "data": { "text": "图 11(a)", "type": "fig", "rid": "Figure11", "data": [ { "name": "text", "data": "图 11(a)" } ] } }, { "name": "text", "data": "所示，出光口大小为600 μm×100 μm。其中出光口增透膜(透射率96%)由电子束镀膜机(莱宝)制备，N面电极(Ni/AuGe/Ni/Au)由磁控溅射技术制备。" } ] }, { "name": "fig", "data": { "id": "Figure11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "(a) N面出光口；(b)SE-DFB半导体激光器。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 11" } ], "title": [ { "name": "text", "data": "(a)N-surface light exiting. (b)SE-DFB semiconductor laser" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971136&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971136&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971136&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "(8) 解理封装：合金后，利用划片解理机解理出SE-DFB半导体激光器单管，使用C-mount封装形式进行封装，如" }, { "name": "xref", "data": { "text": "图 11(b)", "type": "fig", "rid": "Figure11", "data": [ { "name": "text", "data": "图 11(b)" } ] } }, { "name": "text", "data": "所示。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "器件测试与分析" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "按照器件制备流程制备出腔长为1 mm的SE-DFB半导体激光器，并进行初步测试，结果如" }, { "name": "xref", "data": { "text": "图 12", "type": "fig", "rid": "Figure12", "data": [ { "name": "text", "data": "图 12" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图 12(a)", "type": "fig", "rid": "Figure12", "data": [ { "name": "text", "data": "图 12(a)" } ] } }, { "name": "text", "data": "中曲线(1)、(2)分别为SE-DFB半导体激光器的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "曲线和" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线，" }, { "name": "xref", "data": { "text": "图 12(b)", "type": "fig", "rid": "Figure12", "data": [ { "name": "text", "data": "图 12(b)" } ] } }, { "name": "text", "data": "为SE-DFB半导体激光器的光谱。" } ] }, { "name": "fig", "data": { "id": "Figure12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "SE-DFB半导体激光器输出特性。(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "曲线；(b)光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 12" } ], "title": [ { "name": "text", "data": "Output characteristics of SE-DFB semiconductor laser. (a)" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " curves. (b)Spectrum." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971138&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971138&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971138&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图 12", "type": "fig", "rid": "Figure12", "data": [ { "name": "text", "data": "图 12" } ] } }, { "name": "text", "data": "可知，器件在连续工作条件下表面发射功率为890 mW，阈值电流为900 mA，斜率效率为0.44 W/A，发光波长为940.3 nm，光谱线宽为0.52 nm。结果表明，根据所设计的光栅结构参数获得的器件发光波长较准确，波长锁定在940 nm左右。但器件实际输出功率相对较低，分析原因如下：(1)器件阻值较大影响激光器的输出功率；(2)未镀腔面膜，在一定程度上影响了功率的提升；(3)光栅表面形貌不够均匀，在制备过程中不能够完全保证光栅的垂直性，后续的工艺操作也会对光栅形貌产生一定的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "5" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了不同形貌光栅(矩形、梯形、三角形)的耦合因子，通过数值计算讨论了光栅结构参数(周期、占空比、刻蚀深度等)对器件出光特性(线宽、功率及斜率效率等)的影响，并制备了周期279.8 nm、占空比0.4、刻蚀深度283.8 nm的矩形光栅。根据所设计外延及SE-DFB半导体激光器结构，结合二阶光栅、脊形波导、电极及出光口、解理封装等器件工艺，制备出发光波长为940.3 nm的水平谐振腔面发射半导体激光器，线宽为0.52 nm，连续工作模式下发射功率为890 mW，阈值电流为900 mA，斜率效率为0.44 W/A。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "b1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王立军, 宁永强, 秦莉, 等.大功率半导体激光器研究进展[J].发光学报, 2015, 36(1):1-19." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "WANG L J, NING Y Q, QIN L, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Development of high power diode laser[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin" } ] }, { "name": "text", "data": "., 2015, 36(1):1-19. (in Chinese)" } ] } ] }, { "id": "b2", "label": "2", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LYAKH A, ZORY P, D'sOUZA M, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Substrate-emitting, distributed feedback quantum cascade lasers[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett" } ] }, { "name": "text", "data": "., 2007, 91(18):181116-1-3." } ] } ] }, { "id": "b3", "label": "3", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "宋跃辉, 周煜东, 汪丽, 等.基于半导体激光器的780 nm高光谱分辨率激光雷达系统设计[J].中国激光, 2019, 46(10):1001006-1-9." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "SONG Y H, ZHOU Y D, WANG L, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Design of 780-nm high spectral resolution lidar based on laser diode[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lasers" } ] }, { "name": "text", "data": ", 2019, 46(10):1001006-1-9. (in Chinese)" } ] } ] }, { "id": "b4", "label": "4", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "马骁宇, 王俊, 刘素平, 等.国内大功率半导体激光器研究及应用现状[J].红外与激光工程, 2008, 37(2):189-194." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "MA X Y, WANG J, LIU S P, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Present situation of investigations and applications in high power semiconductor lasers[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Infrar. Laser Eng" } ] }, { "name": "text", "data": "., 2008, 37(2):189-194. (in Chinese)" } ] } ] }, { "id": "b5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SCHUBERT M, RANA F. Analysis of terahertz surface emitting quantum-cascade lasers[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "IEEE J. Quantum Electron" } ] }, { "name": "text", "data": "., 2006, 42(3):257-265." } ] } ] }, { "id": "b6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MAISONS G, CARRAS M, GARCIA M, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Substrate emitting index coupled quantum cascade lasers using biperiodic top metal grating[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett" } ] }, { "name": "text", "data": "., 2009, 94(15):151104-1-3." } ] } ] }, { "id": "b7", "label": "7", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "叶淑娟, 秦莉, 戚晓东, 等.二阶光栅分布反馈半导体激光器的出光特性[J].中国激光, 2010, 37(9):2371-2375." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "YE S J, QIN L, QI X D, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Emission characteristics of second-order distributed feedback semiconductor lasers[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lasers" } ] }, { "name": "text", "data": ", 2010, 37(9):2371-2375. (in Chinese)" } ] } ] }, { "id": "b8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y Y, QIN L, JIA P, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. High power narrow far-field broad-stripe semiconductor lasers with second-order metal grating feedback[C]." }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE-Semiconductor Lasers and Applications" } ] }, { "name": "text", "data": " V, " }, { "name": "italic", "data": [ { "name": "text", "data": "Beijing" } ] }, { "name": "text", "data": ", 2012: 277-298." } ] } ] }, { "id": "b9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SIGLER C, KIRCH J D, EARLES T, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett" } ] }, { "name": "text", "data": "., 2014, 104(13):131108-1-5." } ] } ] }, { "id": "b10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU Y H, ZHANG J C, JIA Z W, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Top grating, surface-emitting DFB quantum cascade lasers in continuous-wave operation[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "IEEE Photon. Technol. Lett" } ] }, { "name": "text", "data": "., 2015, 27(17):1829-1832." } ] } ] }, { "id": "b11", "label": "11", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "仕均秀.宽条型二阶金属光栅分布反馈半导体激光器的研制[D].长春: 中国科学院长春光学精密机械与物理研究所, 2011." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "SHI J X. " }, { "name": "italic", "data": [ { "name": "text", "data": "Research and Manufacture of Broad-stripe Second-order Metal Grating Distributed Feedback Semiconductor Lasers" } ] }, { "name": "text", "data": " [D]. Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2011. (in Chinese)" } ] } ] }, { "id": "b12", "label": "12", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "叶淑娟.二阶光栅分布反馈半导体激光器的研制[D].长春: 中国科学院长春光学精密机械与物理研究所, 2010." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "YE S J. " }, { "name": "italic", "data": [ { "name": "text", "data": "Research and Manufacture of Second-order Grating Distributed Feedback Semiconductor Lasers" } ] }, { "name": "text", "data": " [D]. Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2010. (in Chinese)" } ] } ] }, { "id": "b13", "label": "13", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "徐正文. 980 nm高功率波长锁定半导体激光器内置光栅的研究[D].长春: 长春理工大学, 2014." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "XU Z W. " }, { "name": "italic", "data": [ { "name": "text", "data": "Research on Internal Grating of High Power and Wavelength-locked Semiconductor Laser of 980 nm" } ] }, { "name": "text", "data": " [D]. Changchun: Changchun University of Science and Technology, 2014. (in Chinese)" } ] } ] }, { "id": "b14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GLINSKI J, MAKINO T. Mode selectivity in DFB lasers with a second-order grating[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Electron. Lett" } ] }, { "name": "text", "data": "., 1986, 22(12):679-680." } ] } ] }, { "id": "b15", "label": "15", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "张灿, 马丽, 梁松, 等.光栅形貌分析及矩形光栅的制作研究[C].第十七届全国化合物半导体材料微波器件和光电器件学术会议, 开封, 2012." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "ZHANG C, MA L, LIANG S, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. The analysis of grating morphology and study for fabrication of rectangular corrugation[C]." }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of the" } ] }, { "name": "text", "data": " 17" }, { "name": "italic", "data": [ { "name": "text", "data": "th National conference on Microwave Devices and Optoelectronic Devices of Compound Semiconductor Materials" } ] }, { "name": "text", "data": ", " }, { "name": "italic", "data": [ { "name": "text", "data": "Kaifeng" } ] }, { "name": "text", "data": ", 2012. (in Chinese)" } ] } ] }, { "id": "b16", "label": "16", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHO S C, KIM B G, DAGLI N. Ray optics determination of the DFB coupling coefficient for trapezoidal gratings[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "J. Lightw. Technol" } ] }, { "name": "text", "data": "., 1998, 16(4):715-720." } ] } ] }, { "id": "b17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HAI Y N, MA X H, ZOU Y G, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. Research of asymmetric waveguide on surface emitting distributed feedback semiconductor lasers[J]." }, { "name": "italic", "data": [ { "name": "text", "data": "Opt. Commun" } ] }, { "name": "text", "data": "., 2018, 423:12-16." } ] } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20200346", "clc": [ [ { "name": "text", "data": "TN248.4" } ] ], "dc": [], "publisherid": "fgxb-42-2-223", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "吉林省科技发展计划（20190302052GX，20180519018JH）；吉林省教育厅\"十三五\"科技项目（JJKH20190543KJ）资助" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by Jilin Science and Technology Development Plan(20190302052GX, 20180519018JH); Jilin Education Department \"135\" Science(JJKH20190543KJ)" } ] } ], "history": { "received": "2020-11-12", "accepted": "2020-12-07", "opub": "2021-02-08" }, "copyright": { "data": [ { "lang": "zh", "data": [ { "name": "text", "data": "版权所有©《发光学报》编辑部2021" } ], "type": "copyright" }, { "lang": "en", "data": [ { "name": "text", "data": "Copyright ©2021 Chinese Journal of Luminescence.All rights reserved." } ], "type": "copyright" } ], "year": "2021" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "2", "volume": "42", "originalSource": [] }