Development of 808 nm High-power Distributed Feedback Laser Array

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "808 nm大功率分布反馈激光器列阵研制" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Development of 808 nm High-power Distributed Feedback Laser Array" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "班", "givenname": "雪峰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BAN", "givenname": "Xue-feng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "班雪峰(1993-)，男，辽宁丹东人，博士研究生，2016年于吉林大学获得学士学位，主要从事大功率半导体激光器的研究。E-mail: banxuefeng@semi.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349393&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349397&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349400&type=" } ], "data": [ [ { "name": "text", "data": "班雪峰" }, { "name": "text", "data": "(1993-)，男，辽宁丹东人，博士研究生，2016年于吉林大学获得学士学位，主要从事大功率半导体激光器的研究。E-mail: banxuefeng@semi.ac.cn" } ] ] } ], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "翠鸾", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Cui-luan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail: clwang@semi.ac.cn", "data": [ { "name": "text", "data": "E-mail: clwang@semi.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王翠鸾(1980-)，女，河北石家庄人，博士，副研究员，2009年于中国科学院半导体研究所获得博士学位，主要从事大功率半导体激光器、激光二极管阵列光束整形的研究。E-mail: clwang@semi.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349403&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349406&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349409&type=" } ], "data": [ [ { "name": "text", "data": "王翠鸾" }, { "name": "text", "data": "(1980-)，女，河北石家庄人，博士，副研究员，2009年于中国科学院半导体研究所获得博士学位，主要从事大功率半导体激光器、激光二极管阵列光束整形的研究。E-mail: clwang@semi.ac.cn" } ] ] } ], "email": "clwang@semi.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "素平", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Su-ping", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "马", "givenname": "骁宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MA", "givenname": "Xiao-yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学院半导体研究所 光电子器件国家工程中心，北京 　 100083", "data": [ { "name": "text", "data": "中国科学院半导体研究所 光电子器件国家工程中心，北京 　 100083" } ] }, { "lang": "en", "label": "1", "text": "National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China", "data": [ { "name": "text", "data": "National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学 材料科学与光电技术学院，北京 　 100049", "data": [ { "name": "text", "data": "中国科学院大学 材料科学与光电技术学院，北京 　 100049" } ] }, { "lang": "en", "label": "2", "text": "School of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "School of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "为提高大功率半导体激光器的泵浦效率，必须降低半导体激光器输出波长随温度的漂移系数。采用MOCVD外延技术、纳米压印和干法刻蚀附加湿法腐蚀等工艺制备了大功率分布反馈激光器列阵。激光器列阵的腔长为1 mm,25 ℃时中心波长为808 nm，通过测试不同热沉温度下的" }, { "name": "italic", "data": [ { "name": "text", "data": "P-V-I" } ] }, { "name": "text", "data": "曲线和光谱图，表明当脉冲工作电流为148 A时，激光器列阵的输出功率可以达到100 W，斜率效率为0.9 W/A，光谱的FWHM为0.5 nm，边模抑制比可以达到40 dB，出射波长随温度的漂移系数为0.056 nm/℃，单列阵波长锁定范围可达50 ℃，总锁定范围100 ℃。另外还分析了腔面镀膜对波长锁定效果的影响。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In order to improve the pumping efficiency of high-power semiconductor lasers, the drift coefficient of the output wavelength of the semiconductor laser with temperature must be reduced. The high-power distributed feedback laser array is fabricated using MOCVD epitaxial technology, nano-imprinting, dry etching and wet etching. The cavity length of this laser array is 1 mm, and the wavelength is 808 nm at 25 ℃. By testing the " }, { "name": "italic", "data": [ { "name": "text", "data": "P-V-I" } ] }, { "name": "text", "data": " curve and spectrogram at different heat sink temperatures, it is shown that when the pulse working current is 148 A, the output power of the laser array can reach 100 W. The slope efficiency is 0.9 W/A. The FWHM of the spectrum is 0.5 nm. The side mode suppression ratio can reach 40 dB. The thermal drift coefficient of the emission wavelength is 0.056 nm/℃. Single-array wavelength lock ranges up to 50 ℃ and total lock ranges 100 ℃. In addition, the influence of the cavity surface coating on the wavelength locking effect is also analyzed." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "激光器" } ], [ { "name": "text", "data": "分布反馈激光器列阵" } ], [ { "name": "text", "data": "内置布拉格光栅" } ], [ { "name": "text", "data": "波长稳定" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "lasers" } ], [ { "name": "text", "data": "distributed feedback laser diode array" } ], [ { "name": "text", "data": "inner Bragg grating" } ], [ { "name": "text", "data": "wavelength stabilization" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "大功率半导体激光器主要用于固体激光器(DPSSL)、光纤激光器和放大器的泵浦" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而808 nm半导体激光器可以高效且理想地泵浦Nd∶YAG固体激光器。但固体激光器中的掺杂离子Nd" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的吸收峰很窄" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，一般只有几个纳米左右，而半导体激光器的激射波长会因为工作温度的升高和工作电流的增大而变长，这必定会对整个系统的泵浦效率产生不利影响。所以，用作泵浦源的大功率半导体激光器不但要具有高输出功率和效率，而且还要具备窄输出线宽和良好的波长稳定性。目前减小半导体激光器的中心波长随工作温度和电流变化的漂移系数的方法有两种:一种是半导体激光器外部波长稳定方法，另一种是内部波长稳定方法。半导体激光器外部波长稳定是通过使用一些波长锁定设备或者光反馈回路的校准器，从而达到半导体激光器激射中心波长随工作温度和电流变化的漂移系数减小的效果。有三种具体实现方法:光纤光栅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、体布拉格光栅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和闪耀光栅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然外部波长稳定方法具有热稳定性好、高损伤阈值和线性传输等优点，但是大尺寸的外腔和高昂的费用无法满足各种环境下的应用，在运输和使用过程中难免会产生振动，影响系统的准直性，而且其优点都是通过耦合过程中损失半导体激光器的效率得到的。为了得到波长稳定效果更好的半导体激光器，解决外部波长稳定存在的问题，必须要提高系统的集成度，将布拉格光栅设计在半导体激光器芯片内部，制作内部波长稳定半导体激光器。内部波长稳定激光器分为两种:一种是分布反射布拉格激光器(Distributed Bragg reflector laser,DBR)，另一种是分布反馈激光器(Distributed feedback laser,DFB)。两种激光器实现波长稳定的基本原理是:当发光区的光经过布拉格光栅时，满足布拉格条件的光会被反射，在谐振腔内继续振荡，而不满足布拉格条件的光会以出射损耗的方式消失，激光器的激射波长被限制在布拉格光栅对应的波长，从而实现了激光的窄线宽输出，同时也降低了光谱随工作温度和电流的漂移。从制作工艺上来看，内部波长稳定的方法改变了半导体激光器芯片的结构，需要额外一步光刻工艺和二次外延工艺" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，增加了制作难度和成本，同时可能会引入缺陷和杂质，加剧内部损耗。但其具有巨大的优势，在仅仅改变半导体激光器芯片结构的情况下，其他工艺都是原有的、成熟的;实际应用中配套设施少，系统兼容性高。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "国外对大功率DFB激光器的研究始于上世纪九十年代" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，经过十年左右的发展，本世纪初期已经有大量成熟器件和产品的报道。2006年，德国FBH研究所的Klehr和Bugge等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了光栅周期为240 nm的808 nm大功率宽条DFB-LD，腔长为3 mm，室温条件(20 ℃)下连续输出功率为4.7 W，斜率效率为1.06 W/A;当输出功率为4 W时，光谱宽度为0.1 nm，波长随温度的漂移系数为0.075 nm/K。2009年，美国Alfalight公司的He和An等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了大功率808 nm DFB-LD，其光谱宽度为0.3 nm，波长随温度的漂移系数为0.062 nm/K;在25 ℃条件下，光电效率可达57%，连续激射功率为4 W。但近十年来，国内外对808 nm波段DFB激光器单管和列阵的研究出现空白，大功率DFB-LDA更是至今未见报道。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过金属有机化合物气相沉积(MOCVD)和纳米压印工艺制作了808 nm大功率一级光栅分布反馈激光器列阵(Distributed feedback laser diode array,DFB-LDA)，具体的结构设计方案在参考文献[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]中有详细介绍。我们对激光器的功率和光谱进行了表征，结果表明该激光器的波长稳定特性得到了极大的提高，此外还讨论了腔面镀膜对波长锁定的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　光栅制备与表征" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "实验中一次外延生长的外延结构如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。量子阱材料为经过组分调整后对应合适波长的AlGaInAs材料，波导层为非对称分离限制结构;光栅材料选择无铝材料GaInP，这有利于提高二次外延的质量。之后采用纳米压印工艺和ICP干法刻蚀工艺进行光栅的制作，干法刻蚀100 s，刻蚀结果的扫描电子显微镜(SEM)图像如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示，所刻蚀的光栅周期为120 nm，沟槽深度为80 nm。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "DFB激光器一次外延结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "The first epitaxial structure of DFB laser" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "外延层名称" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "外延层组分" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "外延层厚度/nm" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "光栅层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.505" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.495" } ] }, { "name": "text", "data": "P" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "100" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "上波导层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "350" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "量子阱" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "AlGaInAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "8" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "下波导层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "410" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "下限制层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.58" } ] }, { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1 000" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349413&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349411&type=" } } }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "干法刻蚀后的光栅图形" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Shape of grating after dry etching" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349415&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349422&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349418&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "干法刻蚀工艺之后再结合湿法腐蚀工艺去除干法刻蚀过程中产生的聚合物、颗粒物以及晶格损伤，保证外延片表面的洁净度，腐蚀液为溴、氢溴酸和去离子水按一定比例配置，腐蚀时间为15 s，腐蚀之后的光栅SEM图像如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。从图中我们可以看出光栅沟槽表面变得光滑圆润，光栅周期为120 nm，沟槽深度大约为60 nm，占空比为60%左右，在DFB-LDA腔长为1 mm时，对正弦形一级光栅耦合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "κ" } ] }, { "name": "text", "data": "进行计算，光栅耦合强度" }, { "name": "italic", "data": [ { "name": "text", "data": "κL" } ] }, { "name": "text", "data": "值约为1.06左右。之后进行二次外延工艺掩埋布拉格光栅，光栅覆盖层的材料为AlGaAs，光栅覆盖层之上外延一层GaAs材料作为欧姆接触层，完成布拉格光栅的制作。光栅二次外延后经过显结处理的光栅形貌SEM图形如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "湿法腐蚀后的光栅图形" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Shape of grating after wet corrosion" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349424&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349430&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349428&type=" } ] } }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "二次外延后的光栅图形" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Shape of grating after re-growth" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349432&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349436&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349434&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件制作与表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "二次外延之后，采用磁控溅射工艺在外延片P面溅射Ti-Pt-Au电极，之后对外延片N面进行减薄抛光，再使用真空蒸发镀膜设备在N面蒸镀一层Au-Ge-Ni合金作为N面电极。然后使用真空解理设备沿(110)面将激光器芯片解理为腔长1 mm bar条;再使用高真空电子束镀膜机在前腔面镀高透膜，后腔面镀高反膜;最后将bar条三明治结构封装在AlN热沉上，完成器件的制作。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "将封装完成的bar条焊接到Cu过渡热沉上进行输出特性测试与表征。供电方式为具有脉冲工作模式的SDL激光电源，测试温度使用ESPEC调温调湿箱进行设定，激射光谱采用AVANTES公司的AvaSpec-3648光谱仪进行测定，其测量波长范围为2001 100 nm，分辨率为0.02520 nm。本文中的激光器激射波长为808 nm，光谱FWHM为0.5 nm左右，光谱包络是可以被精确描述的。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　激射特性分析" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "将封装好的1 mm腔长、列阵总宽度1 cm、发光点宽度120 μm、单列阵发光点80个左右的DFB-LDA进行测试，输出功率和光谱分别如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，测试温度为25 ℃，测试脉冲电流为200 μS、20 Hz。从图中分析可知工作电流为148 A时，输出功率可以达到100 W，斜率效率为0.9 W/A左右;此时DFB-LDA输出中心波长为808 nm，光谱FWHM为0.5 nm左右，边模抑制比可以达到40 dB。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "DFB-LDA输出" }, { "name": "italic", "data": [ { "name": "text", "data": "P-V-I" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "DFB-LDA output" }, { "name": "italic", "data": [ { "name": "text", "data": "P-V-I" } ] }, { "name": "text", "data": " curve" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349438&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349442&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349440&type=" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "DFB-LDA输出光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "DFB-LDA output spectrum" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349444&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349450&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349447&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　波长稳定分析" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "为工作电流为150 A条件下，DFB-LDA与F-P腔LDA在不同热沉温度时的输出光谱。" }, { "name": "xref", "data": { "text": "图6(a)、(b)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)、(b)" } ] } }, { "name": "text", "data": "为中心波长略有不同的808 nm波段的两支DFB-LDA的测试光谱。如" }, { "name": "xref", "data": { "text": "图6(a)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)" } ] } }, { "name": "text", "data": "所示，热沉温度由50 ℃增加到100 ℃时，对应的输出波长由808.8 nm变化到812.1 nm，波长随温度的漂移系数为0.066 nm/℃;" }, { "name": "xref", "data": { "text": "图6(b)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(b)" } ] } }, { "name": "text", "data": "中热沉温度由-10 ℃增加到40 ℃时，对应的输出波长由805.1 nm变化为807.9 nm，波长随温度的漂移系数为0.056 nm/℃;" }, { "name": "xref", "data": { "text": "图6(c)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(c)" } ] } }, { "name": "text", "data": "中的F-P腔LDA 为制作DFB-LDA外延片上无光栅图形区域解理出的芯片制成的，作为对比结果更有说服力。由测试光谱图可得热沉温度由30 ℃增加到50 ℃时，对应的输出波长由800.1 nm变化为805.6 nm，波长随温度的漂移系数为0.275 nm/℃。对比" }, { "name": "xref", "data": { "text": "图6(a)、(b)、(c)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)、(b)、(c)" } ] } }, { "name": "text", "data": "的结果，可见制作的DFB-LDA的温漂系数比普通的F-P腔LDA减小了4~5倍，具有良好的波长稳定效果。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同热沉温度下DFB-LDA((a)~(b))和F-P腔LDA(c)的光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Spectra of DFB-LDA((a)-(b)) and F-P cavity LDA(c) at different heat sink temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349453&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349459&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349456&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　镀膜对波长锁定的影响" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "是工作电流为150 A条件下测试得到的波长锁定效果不好的DFB-LDA光谱图，图中同时出现了布拉格光栅锁定波长和激光器主输出波长。起初分析原因认为是布拉格光栅的耦合强度不够而导致的锁定效果不理想，于是在激光器列阵其他结构和参数不变的条件下只将光栅的深度从50 nm增加到60 nm以增加光栅的耦合强度。具有不同深度光栅的DFB-LDA光谱测试图如" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "所示，两支DFB-LDA的波长锁定效果基本相同，所以有理由认为布拉格光栅深度为50 nm时耦合强度已经足够进行波长锁定，出现两个输出波长另有原因。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "后腔面镀95%高反膜，前腔面分别镀5%(a)、4%(b)和2%(c)高透膜的DFB-LDA光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "DFB-LDA spectra of 95% high reflection film on the back cavity surface and 5%(a), 4%(b) and 2%(c) high transmission film on the front cavity surface." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349462&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349471&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349466&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "影响DFB-LDA输出波长的因素除了量子阱的应变和布拉格光栅的耦合强度之外，还有一个是腔面镀膜的反射率。于是我们决定DFB-LDA后腔面镀95%高反膜保持不变，通过改变前腔面膜厚来调节反射率的大小，使前腔面镀的高透膜由5%降低到4%和2%。在测试条件不变的情况下测得的光谱如" }, { "name": "xref", "data": { "text": "图7(b)、(c)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)、(c)" } ] } }, { "name": "text", "data": "所示，可以看到降低前腔面镀膜的折射率可以有效地提升DFB-LDA的波长锁定效果。最终经过多次实验优化，将DFB-LDA的镀膜条件确定为后腔面镀95%的高反膜，前腔面镀0.5%左右的高透膜，测试光谱如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　分析与讨论" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "传统的F-P腔激光器列阵的输出波长随温度的漂移系数为0.3 nm/℃左右，本文制备的808 nm大功率DFB列阵的输出波长随温度的漂移系数可以达到0.05 nm/℃左右，单列阵波长锁定范围可达50 ℃，波长稳定得到了极大的提高。同时，一阶光栅虽然耦合强度大，但是一阶光栅的DFB半导体激光器的输出容易存在两个模式，通常为了得到单模特性，DFB激光器的光栅多为二阶光栅或者更高阶光栅。但本文将DFB激光器制作为列阵时将这一缺点转化为了优点，因为DFB-LDA的输出光谱原本就是一个多发光点被压缩的包络。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备了输出波长为808 nm的分布反馈半导体激光器列阵，该激光器列阵腔长为1 mm。25 ℃条件下脉冲工作电流为148 A时，输出功率可以达到100 W，斜率效率为0.9 W/A左右，此时DFB-LDA光谱FWHM为0.5 nm左右，边模抑制比可以达到40 dB，波长随温度的漂移系数为0.056 nm/℃。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { 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