Synthesis and Luminescence Properties of Sr₃(BN₂)₂ Phosphor

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X 射线衍射、扫描电子显微镜、荧光分光光度计对荧光粉的相组成、形貌和发光性能进行表征。讨论了SBN荧光粉的缺陷发光机理和长余辉特性。结果表明，所制备的样品SBN晶体为立方晶系" }, { "name": "italic", "data": [ { "name": "text", "data": "Im" } ] }, { "name": "text", "data": "-3" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "。在紫外区域有较宽的激发带，发射光谱峰值位于525 nm，半峰宽为3 334 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。SBN荧光粉材料存在本征缺陷，在基质中形成了Sr的空位，在光激励下形成发光中心。进一步的余辉衰减曲线与热释光曲线也证实，该材料存在固有缺陷，其余辉时间约10 s。变温光谱显示，当温度达到150 ℃时，荧光强度是室温初始强度的43%，优于稀土掺杂硼氮化物衰减到10%的结果。SBN荧光粉具有合成工艺简单、结构稳定、紫外波段激发获得长余辉绿光发射等优异性能，在LED发光器和指示方面具有潜在的应用前景。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "A new type of phosphor Sr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " (hereinafter abbreviated as SBN) was synthesized by high temperature solid phase one-step method. The phase composition, morphology and luminescent properties of the phosphor were characterized by X-ray diffraction, scanning electron microscopy and fluorescence spectrophotometer. The defect luminescence mechanism and long afterglow characteristics of SBN phosphors were discussed. The results show that the prepared sample SBN crystals is cubic crystal system " }, { "name": "italic", "data": [ { "name": "text", "data": "Im-" } ] }, { "name": "text", "data": "3" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": ". The results show that there is a wide excitation band in the ultraviolet region, and the emission spectrum peak is at 525 nm, and the half peak width is 3 334 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ". The SBN phosphor material has inherent defects. Sr vacancies are formed in the matrix, and the luminous center is formed under light excitation. Further decay curve and thermoluminescence curve also confirm that the material has inherent defects, and the afterglow time is about 10 s. The variable temperature spectrum shows that when the temperature reaches 150 ℃, the fluorescence intensity is 43% of the initial intensity at room temperature, which is better than the 10% attenuation result of rare earth doped boron nitride. The SBN phosphor has a simple synthesis process, a stable structure, and excellent performance such as long afterglow green light emission obtained by ultraviolet wavelength excitation, and has potential application prospects in white light LED lighting and indication." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "Sr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ], [ { "name": "text", "data": "缺陷发光材料" } ], [ { "name": "text", "data": "长余辉" } ], [ { "name": "text", "data": "发光机理" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "Sr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ], [ { "name": "text", "data": "defective luminescent material" } ], [ { "name": "text", "data": "long afterglow" } ], [ { "name": "text", "data": "luminescence mechanism" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "目前，稀土离子掺杂的荧光粉因其在白光发光二极管(WLEDS)、太阳能变换器和光电子器件等领域的广泛应用而备受关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5", "R6" ], "text": "1-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。主流方式是使用稀土离子掺杂的荧光粉与蓝色LED芯片相结合，形成白光发光器件。这些荧光粉大部分都需要贵重且稀缺的稀土离子或者过渡金属离子作为激活剂掺杂到基质材料中。基质材料需要给稀土激活离子提供配位的格点，最终获得稀土离子掺杂的发光材料。例如YAG∶Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、BaMg Al" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "17" } ] }, { "name": "text", "data": "∶Eu" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "(BAM∶Eu" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、BaSi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "∶Eu" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、CaAlSiN" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶Eu" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和Ca" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Si" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "∶Cr" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。各基质材料中的部分碱土金属会被稀土离子Eu" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "所替代，不同基质材料在稀土离子周围环境提供不同的晶体场环境从而获得不同的发光性能。稀土原料价格高，获得特定离子价态需要还原气氛，因此制备方法比较复杂。多数基质材料自身有毒，环境不友好。为了克服这些缺点，缺陷发光材料因无需引入其它组分、由晶格缺陷引起发光，而有望成为替代稀土发光材料的一种材料，对发展新型缺陷发光材料具有重要意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "缺陷发光材料作为一种无毒、低成本、应用广泛的新型发光材料，近些年来受到广泛关注。因此，与缺陷相关的发光材料逐渐被发现和报道，如ZnS" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、BCNO" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Si" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349200&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349212&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349204&type=" } } } ] }, { "name": "text", "data": "玻璃、多孔氧化铝膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Sn" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349215&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349223&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349219&type=" } } } ] }, { "name": "text", "data": "、In" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349227&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349234&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349231&type=" } } } ] }, { "name": "text", "data": "等。与氧化物、硫化物相比，氮化物具有热稳定性好、发光效率高、环境友好等优点，具有良好的应用前景。许多以氮化物为基质的与缺陷相关的发光材料也被报道并被证明有潜在的应用价值。如GaN、InGaN、AlGaN等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然缺陷发光材料已经进入人们的视野，但到目前为止商用的缺陷相关发光材料非常少，并且对缺陷发光的机理研究还不够深入。因此，有必要寻找与缺陷相关的新型发光材料。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "作为氮化物基发光材料的延伸，硼氮化物基发光材料逐渐进入人们的视野。硼氮化物中含有的双键N" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349236&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349242&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349239&type=" } } } ] }, { "name": "text", "data": "B" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349245&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349252&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349248&type=" } } } ] }, { "name": "text", "data": "N阴离子意味着能够形成相对稳定的结构，但是，高质量的硼氮化物发光材料需要在高温和高气压环境下才能获得。一方面要考虑碱土氮化物材料在高温下容易分解，另一方面还得注意氮化硼在一定高温才有反应活性的特点，这给合成带来了一定的难度。BN共价性强，不容易与一般的碱土氮化物反应;而多数碱土氮化物在高温下容易分解，需要高温高压条件下抑制其分解反应。因此，人们提出了两步法合成硼氮化物。例如，德国Dutczak课题组通过两步法陆续合成了Mg" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")N、Mg" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "Si(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "N" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "、Mg" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Al-(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Mg" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Ga(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349257&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349263&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349260&type=" } } } ] }, { "name": "text", "data": "，重点研究了合成条件与晶体结构之间的关系。Ding等采用样品压块烧结法合成了α,β-Ca" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "材料，同时研究了稀土掺杂后的发光性能，表明硼氮化物基荧光粉在LED方面具有潜在的应用。然而，对硼氮化物基缺陷发光材料的合成方法、晶体结构以及发光性能方面的研究还不够深入。本文通过高温固相一步法合成了无稀土离子掺杂的荧光粉SBN，对该荧光粉进行了晶体结构、表面形貌和发光性能等表征，并对其发光机理进行了深入探讨。本文旨在研究新型硼氮化物缺陷发光材料的结构以及缺陷发光机理，以期为获得更多的缺陷发光材料应用于照明和显示领域。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "采用高温固相法制备SBN样品。由于所用原料易挥发易氧化，所有操作均在充满氩气的干燥手套箱(H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "text", "data": "<" }, { "name": "text", "data": "1 mg/L,O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "<" }, { "name": "text", "data": "1 mg/L)中进行。制备SBN样品所用的原料为Sr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(AR)、h-BN(AR 99.9%)。以适当的原子比称取原料，将称取的原料放入玛瑙研钵中研磨10 min，使所有原料混合均匀。然后把混合物放进刚玉坩埚里，用密封条将其密封，并将其从手套箱转移到箱式烧结炉中。为尽量避免原料氧化，利用高纯氮气(99.999%)将箱式炉冲洗34次。在常压氮气流动条件下，以5 ℃/min的升温速率将样品加热至1 400 ℃，保温5 h。之后，样品随炉冷却至室温。通过一步烧结获得了样品，样品多为白色或粒状多晶粉末。所得反应产物经分级处理后待进行各类测试。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　测量和表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "采用Panalytical Empyrean Ⅱ型X射线衍射仪对样品进行晶体结构分析，该仪器采用Cu靶，Kα射线(" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "=0.154 06 nm)。在10°80°范围内采集X射线衍射图(XRD)，计数时间为每步0.1 s，步长为0.03°。用扫描电子显微镜 S-3400N(Hitachi)以及配备的能谱仪(EDS)分析粉末的形貌及元素。采用FS5稳态瞬态荧光光谱仪(Edinburgh,UK)，配合450 W氙光源和双激发单色仪，对样品的激发、发射光谱、衰减曲线及热稳定性进行了测量。使用以碱性白板为标准参照物的PerkinElmer 950光谱仪研究了样品的扩散-反射光谱(DRS)。在测试热释光曲线前先将样品用普通紫外灯(365 nm)照射5 min并放置5 min后，利用自制微型自动控温加热器(加热速率为5 ℃/min)，测试范围从室温到250 ℃，结合FS5稳态瞬态荧光光谱仪进行测定。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　晶体结构与相鉴定" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "通过高温固相一步法制备出SBN样品，并对其进行X射线衍射(XRD)测试，研究了其晶体结构。采用full prof软件作为运行程序，实现了SBN的XRD-Rietveld细化。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "显示了实验XRD数据、相应的Rietveld细化结果、Bragg反射以及SBN样品的实验值和计算值之间的差值。最终的结果收敛于剩余因子" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "=10.16%," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "wp" } ] }, { "name": "text", "data": "=15.21%," }, { "name": "italic", "data": [ { "name": "text", "data": "χ" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "=10.4，表明精修质量良好。SBN晶体结构参数如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "所示，SBN属于立方晶系" }, { "name": "italic", "data": [ { "name": "text", "data": "Im" } ] }, { "name": "text", "data": "-3" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "，晶胞参数为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "=0.764 193 nm。碱土金属Sr与6个N原子相连，形成SrN" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "八面体，其中一个碱土位点位于对称中心，另一个碱土位点与6个N原子配位形成无序SrN" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "八面体。Sr位点通过面共享彼此连接，这意味着主体晶格紧密。通常，由于面共享而产生的两个紧密的阳离子位点会使晶格不稳定，但与碱土连接的[N" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349267&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349275&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349269&type=" } } } ] }, { "name": "text", "data": "B" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": 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"en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Atomic parameters of SBN sample from the Rietveld refinement　" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Atom" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x/a" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y/b" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "z/c" } ] } ] } ] ], "body": [ 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{ "name": "text", "data": "0.310" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.000" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Sr2" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.250" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.250" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.250" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349301&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349296&type=" } } }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "SBN样品的X射线衍射图Rietveld细化" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Rietveld refinement of the X-ray diffraction pattern of SBN" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349304&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349311&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349309&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用扫描电镜(SEM)分析了SBN样品的形貌和元素组成，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。结果表明，SBN样品均呈不规则形貌，颗粒具有较大的分散性。这种不规则的形貌是高温固相反应的结果。相应的EDS光谱分析如" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": "所示，表明样品主要由Sr、B、N、O组成，该结果与晶体结构数据吻合(碳元素主要来自导电胶)。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)~(b)SBN样品的SEM照片;(c)SBN样品的EDS图谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "(a)-(b)SEM photos of SBN. (c)EDS spectrum of SBN" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349315&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349326&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349321&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　发光特性" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "显示了SBN样品的漫反射光谱(DRS)以及激发光谱图。DRS谱图说明SBN在300 nm有一个明显的吸收，表明SBN的带间跃迁。而在可见光部分有很强烈的反射，这和其白色体色相一致。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "的插图显示了SBN样品的[" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与光子能量" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "的关系图，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")是Kubella-Munk函数，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")=(1-" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/2" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "是漫反射光谱中观察到的反射率。采用Cao等提出的方法，外推到" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")=0" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，计算出SBN样品的光学带隙能量约为3.72 eV。从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中也可以看到最有效的激发光谱主峰波长位于360 nm，在SBN基质的吸收光范围内。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "SBN样品的慢反射光谱和激发光谱，插图显示了SBN样品的[" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 与光能" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "的关系图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Diffusion reflection spectra and PLE spectra of SBN, illustrations show the relationship between [" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and light energy" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": " of SBN." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349329&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349335&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349331&type=" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)SBN样品的激发光谱和发射光谱;(b)Sr空位形成的发光中心示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "(a)PLE and PL spectra of SBN samples. (b)Diagram of luminescent center formed by Sr vacancy." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349339&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349348&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349343&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究其发光性能，测试了SBN样品的归一化激发光谱和发射光谱，如" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "所示。从图中可以看出，在" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "em" } ] }, { "name": "text", "data": "=525 nm处监测到一个激发光谱，其激发光谱范围为300400 nm，主峰波长为360 nm。在" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ex" } ] }, { "name": "text", "data": "=360 nm激发下，可以观察到发射峰值" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "em" } ] }, { "name": "text", "data": "=525 nm处的绿光，其发光范围为450650 nm，几乎覆盖整个可见光谱，半峰宽约为3 334 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，斯托克斯位移约为8 730 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，具有较高的转换效率。SBN样品在日光下呈白色，在" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "=365 nm紫外灯下呈现绿色，这与光谱数据完全吻合。虽然在合成过程中很难避免会产生一些杂质，例如BO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和未反应的BN，但是这些材料不会产生荧光现象。另外，根据Li等的关于Mg" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")N发光材料中观察到的缺陷发光现象" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，我们认为SBN样品的发光属于缺陷发光。结合PLE和DRS数据，我们合理推断出作为本征缺陷的Sr空位形成了如下反应所示的发光中心:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349353&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349358&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349363&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "展示了Sr空位形成的发光中心示意图。由于热振动，原子会离开晶格并向外扩散形成空位，产生肖特基缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当激发光被引入主晶格时，一部分光子沿着①方向被晶格振动吸收，另一部分沿着②方向被Sr空位形成的发光中心捕获，晶格弛豫后，晶格振动吸收不到的低能光子沿着方向③发光。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了验证SBN样品的发光属于缺陷发光，我们测量了SBN样品的余辉衰减曲线。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，为了确保在关闭激发源之前所有缺陷状态都已饱和，用" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ex" } ] }, { "name": "text", "data": "=360 nm对材料激发大约30 s后关闭激发源，并记录525 nm处的发射强度。在30~40 s之间可以清晰地观察到样品的发射强度。从" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "的插图中可以看到样品在30 s处发光最强，一直衰减到40 s处时样品的发射强度基本降到最低，判断其余辉时间约为10 s。从长余辉现象也可以说明SBN样品的发光属于缺陷发光。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "SBN样品的余辉衰减曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Afterglow decay curves of SBN sample" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349368&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349374&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349370&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "热释光是分析长余辉材料陷阱的主要手段。通过测试样品的热释光谱(如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示)可以得到25250 ℃之间只有一个很强的热释发光谱，其峰值在54 ℃附近。该热释光谱对应于Sr空位形成的陷阱，也就是说，在本样品中起陷阱作用的是SBN基质的固有缺陷。位于54 ℃处的热释峰还表明，热释峰所对应的温度较低，陷阱深度较浅，陷阱对载流子的束缚能力较弱，载流子释放较快，这是余辉时间被限制10 s左右的原因。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "SBN样品的热释光曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Thermoluminescence curves of SBN samples" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349377&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349384&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349380&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "为SBN样品发射光谱的温度依赖性图谱。从" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "中明显看出，随着温度升高，样品的发射强度明显降低。从" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "中可以看出，当温度从25 ℃升高到200 ℃时，样品的发射强度逐渐降低，光谱的形状基本不变，在200 ℃时主峰位置蓝移了5 nm。主峰位置发生蓝移的主要原因可能是在高温下在势垒Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "处发生了“热反传”" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这将导致在较高能级下发生电子跃迁。因此，发生短波长发射，造成主峰位置蓝移。对于固有的缺陷，其不会受到晶体环境的影响，升高温度，缺陷所产生的能级位置并不会发生改变，温度升高只会影响缺陷内电子的浓度。对比稀土掺杂的硼氮化物，SBN样品在150 ℃时，发射强度约为室温下初始强度的43%(" }, { "name": "xref", "data": { "text": "图7(b)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)" } ] } }, { "name": "text", "data": ")，优于已报道的α-" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "text", "data": "=Ca,Sr)∶Eu" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "、α,β-Ca" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-(BN" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "荧光粉" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } } ], "rid": [ "R26", "R27" ], "text": "26-27", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等在125 ℃时其发光强度热猝灭为初始强度的10%和20%，说明SBN荧光粉比稀土掺杂的硼氮化物的热稳定性能好一些。一方面，由于SBN致密的立方晶体结构，使其具有相对好的热稳定性;另一方面，我们也采用Arrhenius方程对SBN的热猝灭数据进行了拟合，计算出其活化能Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "。计算公式如下" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "(a)SBN样品的光致发光光谱的温度依赖性;(b)SBN样品的相对强度的温度依赖性;(c)SBN样品的缺陷能基态和激发态的构型坐标图;(d)SBN样品的ln(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "-1)与1000/" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "的关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "(a)Temperature dependence of emission spectra of SBN sample. (b)Temperature dependence of relative intensity of SBN sample. (c)Configurational coordinate diagram of the ground states and excited states of defect energy for SBN sample. (d)Relationship of ln(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "-1)" }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " 1000/" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": " for the sample of SBN." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349385&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349392&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349389&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349395&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349398&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349401&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "是室温下的发射强度，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] } ] }, { "name": "text", "data": "是不同温度下的发射强度，" }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "是8.629×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " eV的玻尔兹曼常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "是主体的常数，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "是热猝灭的活化能。" }, { "name": "xref", "data": { "text": "图7(c)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(c)" } ] } }, { "name": "text", "data": "显示了SBN样品的ln(" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] } ] }, { "name": "text", "data": "-1)与1 000/" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "的关系，该线性关系的斜率为-2.439。根据公式(2)，可以计算活化能Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "为0.210 5 eV。为了进一步说明热猝灭过程，" }, { "name": "xref", "data": { "text": "图7(d)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(d)" } ] } }, { "name": "text", "data": "显示了SBN的基态和缺陷能激发态的位形坐标图。如前所述，电子从基态转移到激发态，然后经过自旋晶格弛豫，最后电子沿①返回基态，发出绿色的光，较深缺陷能级上的电子受到热激发，到达激发态而返回到基态。然而，一些电子也可以通过吸收活化能Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "沿②返回基态，从而导致热猝灭。也就是说，SBN缺陷的热释发光和热猝灭两种作用共存。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "SBN荧光粉的色度坐标如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示，SBN荧光粉的色度坐标为(0.322,0.512)。SBN荧光粉可以与发射365 nm波长的紫外芯片结合使用，以制成LED发光器件。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "SBN样品的色度坐标" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Chromaticity coordinates of SBN sample" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349404&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349410&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349407&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "采用高温固相一步法合成了相纯度较高的立方晶系SBN缺陷发光材料。SBN荧光粉的漫反射光谱结果表明，SBN荧光粉的带隙值为3.72 eV，具有紫外波段吸收和激发特性。SBN荧光粉在" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ex" } ] }, { "name": "text", "data": "=360 nm激发时发出峰值波长在525 nm处的宽谱带绿光，谱带宽度为6 837 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，其发光可能是来自Sr空位产生的缺陷形成了发光中心，属于材料的固有缺陷。进一步的余辉衰减曲线与热释光曲线也证实，该材料存在固有缺陷，其余辉时间约为10 s。上述结果表明，SBN缺陷发光材料是一种十分有潜力的发光材料，可以应用于白光LED照明和显示等领域。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SUEHIRO T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HIROSAKI N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIE R J" }, { "name": "text", "data": ". 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