A study of GaN grown on sputtered AlN/Mo/Sc_0.2Al_0.8N composite structure with different Mo thickness Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "不同Mo层厚度的AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N复合结构上MOCVD外延GaN的研究" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "A study of GaN grown on sputtered AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N composite structure with different Mo thickness" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "李", "givenname": "嘉豪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Li", "givenname": "Jia-hao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "李嘉豪（1998－），男，北京市人，硕士研究生，主要从事半导体光电材料与器件的外延生长研究。 E-mail： 1483676540@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544754&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544756&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544755&type=", "width": "23.65266609", "height": "33.14814758", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "李嘉豪" }, { "name": "text", "data": "（1998－），男，北京市人，硕士研究生，主要从事半导体光电材料与器件的外延生长研究。 E-mail： " }, { "name": "text", "data": "1483676540@qq.com" } ] ] } ], "email": "1483676540@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "韩", "givenname": "军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAN", "givenname": "Jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "邢", "givenname": "艳辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Xing", "givenname": "Yan-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "董", "givenname": "晟园", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Dong", "givenname": "Sheng-yuan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "冰辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Wang", "givenname": "Bing-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "任", "givenname": "建华", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Ren", "givenname": "Jian-hua", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "曾", "givenname": "中明", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Zeng", "givenname": "Zhong-ming", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "宝顺", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Zhang", "givenname": "Bao-shun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "邓", "givenname": "旭光", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "Deng", "givenname": "Xu-guang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： xgdeng2011@sinano.ac.cn", "data": [ { "name": "text", "data": "E-mail： xgdeng2011@sinano.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "邓旭光（1987－），男，内蒙古呼和浩特市人，硕士，高级工程师，主要从事GaN材料生长和HEMT器件制备。E-mail：xgdeng2011@sinano.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544757&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544759&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544758&type=", "width": "26.00973511", "height": "35.02527618", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "邓旭光" }, { "name": "text", "data": "（1987－），男，内蒙古呼和浩特市人，硕士，高级工程师，主要从事GaN材料生长和HEMT器件制备。E-mail：" }, { "name": "text", "data": "xgdeng2011@sinano.ac.cn" } ] ] } ], "email": "xgdeng2011@sinano.ac.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "北京工业大学 信息学部 光电子技术教育部重点实验室，北京 朝阳 100124", "data": [ { "name": "text", "data": "北京工业大学 信息学部 光电子技术教育部重点实验室，北京 朝阳 100124" } ] }, { "lang": "en", "label": "1", "text": "Faculty of Information Technology， Key Laboratory of Opto-electronics Technology，Ministry of Education Beijing University of Technology， Chaoyang 100124， China", "data": [ { "name": "text", "data": "Faculty of Information Technology， Key Laboratory of Opto-electronics Technology，Ministry of Education Beijing University of Technology， Chaoyang 100124， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "长春理工大学 高功率半导体激光国家重点实验室 吉林 长春 130022", "data": [ { "name": "text", "data": "长春理工大学 高功率半导体激光国家重点实验室 吉林 长春 130022" } ] }, { "lang": "en", "label": "2", "text": "State Key Laboratory of High Power Semiconductor Lasers of Changchun University of Science and Technology； Jilin Changchun 130022", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Lasers of Changchun University of Science and Technology； Jilin Changchun 130022" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "中国科学院 苏州纳米技术与纳米仿生研究所， 江苏 苏州 215123", "data": [ { "name": "text", "data": "中国科学院 苏州纳米技术与纳米仿生研究所， 江苏 苏州 215123" } ] }, { "lang": "en", "label": "3", "text": "Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences， Suzhou 215123， China", "data": [ { "name": "text", "data": "Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences， Suzhou 215123， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "采用脉冲直流磁控溅射法在Si（100）衬底上制备了AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N复合结构薄膜，在该结构上通过金属有机化学气相沉积（MOCVD）技术进行GaN薄膜的外延。使用原子力显微镜、高分辨X射线衍射、粉末X射线衍射、扫描电子显微镜和拉曼光谱研究了Mo插入层的厚度对Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层和GaN外延层晶体质量的影响，研究了Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层对Mo上生长的GaN外延层的影响。研究结果表明，Mo插入层的厚度是影响Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层和GaN外延层的重要因素，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层对Mo上GaN晶体质量的提高具有重要意义。随Mo厚度的增加，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层的表面粗糙度先减小后增大，GaN外延层的（002）面X射线衍射摇摆曲线半峰全宽先减小后增大。当Mo插入层厚度为400 nm时，GaN外延层的晶体质量最好，GaN（002）面的X射线衍射摇摆曲线半峰全宽为0.51°，由拉曼光谱计算得到的压应力483.09 MPa；直接在Mo上进行GaN的外延，GaN（002）面的X射线衍射摇摆曲线半峰全宽无法测得，在Mo上进行GaN的外延需要Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N composite structure films were prepared on Si（100） substrate by pulsed DC magnetron sputtering， and the epitaxy of GaN films was grown by metal-organic chemical vapor deposition （MOCVD）. Atomic force microscopy， high-resolution X-ray diffraction， powder X-ray diffraction， scanning electron microscopy and Raman spectroscopy were used to study the effect of the thickness of the Mo layer on the crystal quality of the Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N layer and the GaN epitaxial layer， and the importance of the Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N layer for the GaN epitaxial layer grown on Mo was also studied. The results show that the thickness of the Mo layer is an important factor affecting the Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N layer and the GaN epitaxial layer， and the Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N layer is of great significance to the epitaxy of GaN on Mo. When the thickness of the Mo layer is 400 nm， the crystal quality of the GaN epitaxial layer is the best， the full width at half maximum of the X-ray diffraction on the GaN（002） surface is 0.51°， and the compressive stress calculated by Raman spectroscopy is 483.09 MPa." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "GaN" } ], [ { "name": "text", "data": "MOCVD" } ], [ { "name": "text", "data": "ScAlN" } ], [ { "name": "text", "data": "X射线衍射" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "GaN" } ], [ { "name": "text", "data": "MOCVD" } ], [ { "name": "text", "data": "ScAlN" } ], [ { "name": "text", "data": "XRD" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "氮化镓作为宽禁带半导体，具有较高的电子迁移率以及较高的临界击穿场强，使其在光电、电力电子、射频通讯等领域有广泛应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5", "R6", "R7", "R8" ], "text": "1-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。GaN 高电子迁移率晶体管(High Electron Mobility Transistor, HEMT)作为主流GaN器件更加符合5G技术需要，可以大幅度提高通信效率，促进产业进步" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。硅基互补金属氧化物半导体(Complementary Metal Oxide Semiconductor, CMOS)工艺成熟，可以大幅降低成本、功耗，提高集成度，因此将GaN HEMT与硅基CMOS工艺相结合对无线通信电路领域有巨大的发展优势。GaN HEMT常在Si(111)衬底上生长制备，而CMOS技术则是基于Si(100)衬底，再加上工艺复杂度与生产成本等差异的影响导致CMOS工艺与GaN HEMT的存在兼容性问题。因此，如何在Si(100)衬底上制备出高质量的GaN薄膜材料成为了解决CMOS工艺与GaN HEMT兼容性的关键问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "GaN为六方晶系的纤锌矿结构，而Si(100)衬底为立方晶系的金刚石结构，二者晶格结构不同而且存在很大的晶格失配和热失配，直接导致在Si(100)衬底上外延的GaN薄膜晶体质量较差" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R11", "R12" ], "text": "11-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了缓解GaN与Si衬底之间的晶格失配，常使用AlN成核层和AlGaN应力释放层结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "R13", "R14" ], "text": "13-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而Si(100)衬底与AlN晶格结构不同，直接在Si(100)上通过金属有机化合物化学气相沉积(Metal organic Chemical Vapor Deposition, MOCVD)外延的AlN表面粗糙且晶体质量差。以往研究是通过引入插入层的方式屏蔽Si(100)衬底的影响来解决这一问题。北京大学的冯玉霞等人在Si(100)衬底上通过引入单原子层的石墨烯，用NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "对石墨烯进行预处理，sp" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "杂化的C-N键可以诱导AlN的成核，从而优化GaN外延层的晶体质量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Vasily Bessolov等人通过在Si(100)衬底上引入50 nm的薄层的SiC，再进行20 nm AlN/1 μm GaN的外延，使得Si(100)衬底与GaN之间的晶格失配带来的后续外延位错高的问题大幅缓解，可获得高质量的GaN外延层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些研究都说明，选择合适的插入层，可以为后续AlN、GaN的MOCVD外延提供合适的生长基底。体声波(FBAR)和声表面波(SAW)器件中，Mo常作为器件的下电极" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。体心立方结构的Mo(110)与AlN(002)存在取向关系，意味着可以通过在Si(100)衬底上制备Mo(110)缓冲层改善AlN成核层的质量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有研究表明，在生长AlN时掺入Sc，可以减少AlN与GaN的晶格失配，当Sc含量为20%时，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N与GaN仅有0.4%的晶格失配，能够更好的缓解Si(100)衬底与GaN之间的晶格失配" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。本文研究了Si(100)/Sputtered-Mo(Sp-Mo)基底(磁控溅射钼基底)上GaN的MOCVD外延，并且将Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N和Mo结合，研究了AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N复合结构对Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N、GaN MOCVD外延的影响,溅射的薄层AlN提供六方晶格结构的生长模板，并且一定程度上屏蔽衬底对外延层的影响，通过改变Mo的厚度对Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N和GaN外延层的晶体质量进行优化，并对Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N、GaN外延层的表面形貌和晶体质量进行了分析与表征。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本文使用Orbotech公司的SPTS’s Sigma® fxp磁控溅射设备在5.08 cm(2 inch)的Si(100)衬底上溅射了200 nm的Mo插入层，标记为样品A。随后在Si(100)衬底上溅射了AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N结构，根据Mo厚度的不同，将样品依次标记为B，C，D，E。五个样品的具体外延结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示，样品A-E的具体参数如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。溅射所用靶材为高纯度Mo、Al靶以及Sc含量20%的ScAl合金靶，工作气体和反应气体分别为纯度99.9995%的Ar和N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。在溅射前，用丙酮、异丙醇和去离子水分别对衬底超声清洗5 min，然后在真空度为139 Pa的预处理腔室内用450℃热板加热5 min以去除衬底表面的水汽。通过抽真空使溅射腔的本底气压小于6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6 " } ] }, { "name": "text", "data": " Pa，基板温度固定为200℃。溅射上文所说的结构后，为了研究Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层对在Mo上进行GaN的外延的重要性以及不同Mo的厚度对GaN薄膜材料质量的影响，将溅射后的样品置于CRIUS MOCVD中在低压下外延厚度约200 nm的AlN，700 nm的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "N，200 nm的GaN。采用H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为载气，三甲基铝(Trimethylaluminium, TMAl)、三甲基镓(Trimethylgallium, TMGa)和NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "分别用作Al源、Ga源和N源，生长GaN外延层的Ⅴ/Ⅲ为1129，温度1290℃。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a） 样品A的外延结构示意图 （b） 样品B-E的外延结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Schematic diagram of the epitaxial structure of Sample A （b）Schematic diagram of the epitaxial structure of Sample B-E" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544760&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544762&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544761&type=", "width": "77.69583130", "height": "44.48044586", "fontsize": "" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "样品A-E的外延结构参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Epitaxial structural parameters of samples A-E" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Samples" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "A" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "B" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "C" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "D" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "E" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "Sp-AlN厚度/nm" } ] }, { "align": "center", "data": [ { "name": "text", "data": "-" } ] }, { "align": "center", "data": [ { "name": "text", "data": "20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "20" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "Sp-Mo厚度/nm" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "data": [ { "name": "text", "data": "400" } ] }, { "align": "center", "data": [ { "name": "text", "data": "600" } ] }, { "align": "center", "data": [ { "name": "text", "data": "800" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "Sp-Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N厚度/nm" } ] }, { "align": "center", "data": [ { "name": "text", "data": "-" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1000" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "MOCVD-AlN厚度/nm" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "data": [ { "name": "text", "data": "200" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "MOCVD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "N厚度/nm" } ] }, { "align": "center", "data": [ { "name": "text", "data": "700" } ] }, { "align": "center", "data": [ { "name": "text", "data": "700" } ] }, { "align": "center", "data": [ { "name": "text", "data": "700" } ] }, { "align": "center", "data": [ { "name": "text", "data": "700" } ] }, { "align": "center", "data": [ { "name": "text", "data": "700" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "MOCVD-GaN厚度/nm" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "200" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544764&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544763&type=", "width": "77.69584656", "height": "28.10832596", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　样品表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "采用Bruker公司的Dimension 3100型原子力显微镜(Atomic Force Microscope, AFM)在轻敲模式下对Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "AlN缓冲层的表面形貌进行测试；通过PANalytical公司的pw3040/60型高分辨X射线衍射仪(High Resolution X-ray diffraction, HRXRD)测试Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N和GaN的(002)面摇摆曲线；GaN材料所受应力采用HORIBA JobinYvon 公司的Hr800激光共聚焦显微拉曼光谱仪进行测试表征；所使用的粉末X射线衍射仪是 BRUKER 公司的 D8 ADVANCE，用于测量样品2θ-ω联动扫描曲线的衍射峰强度；所使用的扫描电子显微镜(Scanning Electron Microscope , SEM)是Raith 公司的 eLINE Plus 型扫描电子显微镜，加速电压为 10kV，工作时的腔室真空度约 6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-7 " } ] }, { "name": "text", "data": "mbar，用于表征样品的截面结构。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "(a)为A样品Si(100)/Sp-Mo基底和D样品AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N的MOCVD生长的在位监控曲线，" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "(b)和(c)分别为A样品和D样品的SEM截面形貌图。A样品的曲线的反射信号较弱而且没有周期性振荡，表明样品A上外延AlN、AlGaN和GaN时不是二维生长模式。虽然Mo(110)与AlN(002)有取向关系，但AlN的晶格结构为六方纤锌矿结构，而Mo为立方结构，二者晶格结构的差异导致在MOCVD中Al原子在Mo表面迁移能力较差，浸润性差，更容易形成岛状生长而非二维生长，影响后续GaN外延层的晶体质量，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "(b)所示，外延层的表明粗糙并且界面区分不明显。D样品生长时的振幅完整且强度较高，表明样品的外延质量较高，在Mo上加入Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层后，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N与AlN同为六方晶格结构，晶格常数相近，有利于GaN外延层的生长，说明溅射Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N可以改善Sp-Mo/Si(100)上GaN的MOCVD外延。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "(c)所示，D样品的Mo层，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N层，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "N层清晰明确，这说明样品的外延结构完整，具有较高的质量。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a） 样品A和样品D的MOCVD 反应监控曲线 （b） A样品的SEM截面形貌图 （c） D样品的SEM截面形貌图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a） MOCVD reaction monitoring curves for samples A and D （b） SEM cross-sectional topography of sample A（c）SEM cross-sectional topography of sample D" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544765&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544767&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544766&type=", "width": "58.84230042", "height": "125.11767578", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "为不同Mo厚度的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层样品的表面形貌的AFM测试结果，" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "为Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N样品的表面粗糙度随Mo厚度的变化趋势，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N样品表面晶粒的横向尺寸和高度随着Mo厚度的增加先减小后增大，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N表面粗糙度也随之先减小后增大，分别为1.17 nm，1.08 nm，1.22 nm，1.35 nm。这是因为，当Mo的厚度较薄时，Mo层的晶体质量较差，导致后续生长的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N层晶体质量也较差，但若Mo的厚度过厚，会因为应力原因使得Mo层开裂，也会对Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N层造成一定的不良影响，相关Al金属层厚度的研究表明Al金属层的厚度对后续生长的薄膜质量有重要影响，影响半导体层的结晶度，与我们的实验结果相吻合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R21", "R22", "R23" ], "text": "21-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同Mo厚度的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层的AFM表面形貌" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Surface morphology of AFM of Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N buffer layer with different Mo thicknesses" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544768&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544770&type=", "big": 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"text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N(002)半峰全宽最小为1.38°，其次为C样品，为1.43°，表明四个样品中，样品C、E的晶体质量较好。当Mo层较薄时，晶粒尺寸较小，此时表面粗糙度起主要作用。粗糙度较大的表面影响溅射的Al、Sc等原子在表面迁移进而影响Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N的晶体质量。当Mo厚度为800 nm时，Mo的晶粒尺寸较大，(110)择优取向得到加强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，Mo(110) //Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N(002)，因而Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N(002)取向也得到促进，半峰全宽有所降低，此时晶粒尺寸成为决定晶体质量的主要方面。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a） Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N（002）面XRD测试的FWHM变化趋势（b） GaN（002）面XRD测试的FWHM变化趋势" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a） FWHM trend of XRD test on Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N（002） surface （b） FWHM trend of XRD test on GaN（002） surface" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544774&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544776&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544775&type=", "width": "68.03717041", "height": "104.26879883", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "(b)为在样品B~E上外延200 nm厚GaN材料后，XRD测试(002)面半峰全宽的变化趋势。从" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "(b)中可以看出，GaN(002)面半峰全宽随Mo的厚度增加先减小后增大，四个样品中C样品的GaN晶体质量最好为0.51°。这说明，GaN外延层的晶体质量与缓冲层的表面形貌与晶体质量密切相关，与上文Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N表面形貌及晶体质量变化趋势相吻合。缓冲层表面微晶尺寸大，表面不平整，影响GaN的成岛，使得GaN的晶体质量较差。GaN(002)面摇摆曲线半峰全宽主要受到穿透螺型位错影响，GaN(002)的穿透螺型位错密度计算公式如下" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544778&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544777&type=", "width": "20.74333191", "height": "7.78933382", "fontsize": "" } } }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { 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"data": [ { "name": "text", "data": "1.22×10" }, { "name": "sup", "data": [ { "name": "text", "data": "10" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "1.72×10" }, { "name": "sup", "data": [ { "name": "text", "data": "10" } ] } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544784&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544783&type=", "width": "77.69583130", "height": "24.31596375", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(a)为B-E四个样品的粉末XRD的2θ-ω联动扫描曲线，全部样品测试曲线的AlN(002)和Mo(110)晶面衍射峰都较强，表明不同Mo厚度的四个样品皆可实现Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N和Mo的高质量生长。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）不同Mo厚度的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层的粉末XRD扫描曲线 （b）不同Mo厚度的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层上GaN的粉末XRD扫描曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a） XRD scanning curve of powder with Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N buffer layer with different Mo thicknesses （b） XRD scanning curve of GaN powder on Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N buffer layer with different Mo thicknesses" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544785&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544787&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544786&type=", "width": "70.28213501", "height": "102.88562012", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(b)为B-E四个样品外延GaN后的粉末XRD的2θ-ω联动扫描曲线，全部样品测试曲线的GaN(002)、AlN(002)和Mo(110)晶面衍射峰都较强，表明通过MOCVD高温外延生长GaN后，GaN的晶体质量较好，且高温生长并没有引起Mo的扩散，Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N、AlN和Mo的晶体质量不受影响，依然有较高的质量。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(a)为B~E样品的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "AlN拉曼测试曲线。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(a)所示皆为Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N的E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)声子散射峰。四个样品的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)峰位分别位于624.5，629.0，625.1，620.1cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）不同Mo厚度的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层的拉曼光谱 （b）不同Mo厚度的Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N缓冲层上GaN的拉曼光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "（a） Raman spectra of Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N buffer layers with different Mo thicknesses （b） Raman spectra of GaN on Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N buffer layers with different Mo thicknesses" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544788&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544790&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544789&type=", "width": "71.66442871", "height": "115.76232910", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(b)为B~E样品的GaN拉曼测试曲线。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(b)所示皆为GaN的E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)声子散射峰，虚线为无应力状态下GaN的E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)峰位，其值为567.6cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " 。四个样品的GaN E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)峰位分别位于569.1，569.6，568.6，567.7cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，相比于标准峰位，全部四个样品的GaN E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)峰位均发生蓝移，这表明全部四个样品的GaN薄膜中均存在压应力。依据公式：" } ] }, { "name": "dispformula", "data": { "label": [], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544792&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544791&type=", "width": "13.46199989", "height": "2.79399991", "fontsize": "" } } } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "计算四个样品的薄膜应力，其中" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544794&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544793&type=", "width": "4.91066647", "height": "2.79399991", "fontsize": "" } } } ] }, { "name": "text", "data": "为GaN的E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)拉曼峰位频移，k为GaN的拉曼应力因子(-4.2cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "/GPa)，σ为薄膜双轴应力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据公式计算得到四个样品B~E的薄膜应力依次为366.19，483.09，249.28，15.71 MPa。可以看出，随Mo的厚度增加，GaN外延层所受压应力先增大后减小，这是因为，Mo的晶格常数为0.314nm，而GaN的晶格常数为a=0.3189 nm，c=0.5185nm，随Mo的厚度增大，应力的积累越大，而GaN的晶格常数大于Mo，也受到压应力，因此C样品相较于B样品压应力变大；但随着Mo的厚度继续增厚，会超过临界厚度，薄膜出现裂纹，使得应力逐渐被释放，因此相较于C样品，D、E样品所受压应力依次减小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "为了改善在Si(100)上外延GaN的质量，我们引入了AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N复合结构。通过改变Mo的厚度对GaN的质量进行优化，随Mo的厚度增加，GaN(002)面的FWHM先减小后增大，在Mo厚度为400 nm时，GaN(002)的FWHM最小为0.51°，表明该厚度的GaN晶体质量最优。研究表明AlN/Mo/Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N复合结构降低了Si(100)衬底对GaN外延层的影响，大幅减少了晶格失配，为GaN外延层的生长提供了合适的六方结构基底。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Yin S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Lin Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Hao R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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