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1.Faculty of Information Technology, Key Laboratory of Opto-electronics Technology,Ministry of Education Beijing University of Technology, Chaoyang 100124, China
2.State Key Laboratory of High Power Semiconductor Lasers of Changchun University of Science and Technology; Jilin Changchun 130022
3.Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Published Online:07 February 2023,
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李嘉豪,韩军,邢艳辉等.不同Mo层厚度的AlN/Mo/Sc0.2Al0.8N复合结构上MOCVD外延GaN的研究[J].发光学报,
Li Jia-hao,HAN Jun,Xing Yan-hui,et al.A study of GaN grown on sputtered AlN/Mo/Sc0.2Al0.8N composite structure with different Mo thickness[J].Chinese Journal of Luminescence,
李嘉豪,韩军,邢艳辉等.不同Mo层厚度的AlN/Mo/Sc0.2Al0.8N复合结构上MOCVD外延GaN的研究[J].发光学报, DOI:10.37188/CJL.20220406
Li Jia-hao,HAN Jun,Xing Yan-hui,et al.A study of GaN grown on sputtered AlN/Mo/Sc0.2Al0.8N composite structure with different Mo thickness[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20220406
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