Synthesis of CsCu₂I₃ nanocrystalline films by mixed antisolvent strategy for light-emitting diodes Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "混合反溶剂法制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米晶薄膜及其发光器件应用研究" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Synthesis of CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanocrystalline films by mixed antisolvent strategy for light-emitting diodes" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "姬", "givenname": "心震", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JI", "givenname": "Xin-zhen", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "姬心震（1997－），男，河北沧州人，博士研究生，2022年于郑州大学获得硕士学位，主要从事非铅金属卤化物钙钛矿材料及其在电致发光二极管中的应用研究。 E-mail： 1437640144@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480701&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480710&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480704&type=", "width": "26.12299919", "height": "36.54800415", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "姬心震" }, { "name": "text", "data": "（1997－），男，河北沧州人，博士研究生，2022年于郑州大学获得硕士学位，主要从事非铅金属卤化物钙钛矿材料及其在电致发光二极管中的应用研究。 E-mail： " }, { "name": "text", "data": "1437640144@qq.com" } ] ] } ], "email": "1437640144@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "马", "givenname": "壮壮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MA", "givenname": "Zhuang-zhuang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "田", "givenname": "世超", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TIAN", "givenname": "Shi-chao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "贾", "givenname": "陌尘", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JIA", "givenname": "Mo-chen", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "陈", "givenname": "旭", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Xu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "史", "givenname": "志锋", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Zhi-feng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： shizf@zzu.edu.cn", "data": [ { "name": "text", "data": "E-mail： shizf@zzu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "史志锋（1987－），男，河南商丘人，博士，教授，博士生导师，2015年于吉林大学获微电子学与固体电子学专业博士学位，主要从事新型半导体发光材料的合成、光物理及其光电器件应用研究。E-mail： shizf@zzu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480716&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480728&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480722&type=", "width": "25.11800003", "height": "33.44300842", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "史志锋" }, { "name": "text", "data": "（1987－），男，河南商丘人，博士，教授，博士生导师，2015年于吉林大学获微电子学与固体电子学专业博士学位，主要从事新型半导体发光材料的合成、光物理及其光电器件应用研究。E-mail： " }, { "name": "text", "data": "shizf@zzu.edu.cn" } ] ] } ], "email": "shizf@zzu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "郑州大学 物理学院，河南 郑州　450052", "data": [ { "name": "text", "data": "郑州大学 物理学院，河南 郑州　450052" } ] }, { "lang": "en", "label": "1", "text": "Key Laboratory of Materials Physics of Ministry of Education， School of Physicsand Microelectronics， Zhengzhou University， Zhengzhou 450052", "data": [ { "name": "text", "data": "Key Laboratory of Materials Physics of Ministry of Education， School of Physicsand Microelectronics， Zhengzhou University， Zhengzhou 450052" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "河南超威光电科技有限公司， 河南 郑州　450001", "data": [ { "name": "text", "data": "河南超威光电科技有限公司， 河南 郑州　450001" } ] }, { "lang": "en", "label": "2", "text": "ChinaHenan Chaowei Photoelectric Technology Co. LTD， Zhengzhou 450001，China", "data": [ { "name": "text", "data": "ChinaHenan Chaowei Photoelectric Technology Co. LTD， Zhengzhou 450001，China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "近年来，新兴的三元铜基卤化物（CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）材料由于其高荧光量子产率、环保无毒、环境稳定、成本低廉等诸多优点，在环保型发光二极管（LED）中的应用备受瞩目。然而，由于难以控制的结晶动力学，制备高质量的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发光层薄膜仍是一个巨大的挑战，这限制了LED器件性能的进一步提升。本文通过使用甲苯与甲醇混合溶剂作为反溶剂来增强反溶剂的钉扎效应，增加CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体的成核密度，降低薄膜的晶粒尺寸，进而形成了光滑、致密的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米晶薄膜。此外，混合反溶剂策略可以有效增强辐射复合效率，显著提高CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的发光性能，相比对照样品（只使用甲苯），混合反溶剂法所制备薄膜的荧光量子产率（PLQY）增加了1.5倍，激子束缚能从~201.6 meV提高至~234.5 meV。最终，相比对照器件，基于混合反溶剂策略的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基LED的最大亮度和最高外量子效率分别提高了5.5倍和1.6倍。本工作的研究结果不仅有助于加深CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜制备过程中结晶规律的理解，而且有助于进一步推动基于CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "环境友好型的LED器件性能的提升。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Recently， the emerging ternary copper-based halide （CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "） materials have attracted much attention in the application of environmentally friendly light-emitting diodes （LEDs） due to their high photoluminescence quantum yield （PLQY）， non-toxicity， good stability， and low cost. However， the synthesis of high-quality CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " light-emitting films is still a great challenge due to the ungovernable crystallization dynamics of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， which limits the further improvement of device performance. Here， by using a mixed solvent of toluene and methanol as an antisolvent to improve the pinning effect from the antisolvent， increase the nucleation density of CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " crystals， and reduce the grain size of the films， and a smooth and dense CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanocrystalline film was formed. Moreover， the mixed antisolvent strategy can effectively enhance the radiative recombination efficiency and significantly improve the PL properties of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films. Compared with the control sample （only using toluene）， the PLQY of the films prepared by the mixed antisolvent method is increased by 1.5 times， and the exciton binding energy was increased from ~201.6 meV to ~234.5 meV. Finally， the maximum luminance and the external quantum efficiency of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " LED based on the mixed antisolvent strategy were enhanced by 5.5 and 1.6 times compared with the control device， respectively. The results of this work are not only conducive to deepening the understanding of crystallization laws during the preparation of CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films， but also help to further promote the device performance of CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-based environmentally friendly LEDs." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ], [ { "name": "text", "data": "纳米晶薄膜" } ], [ { "name": "text", "data": "反溶剂" } ], [ { "name": "text", "data": "黄光LED" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ], [ { "name": "text", "data": "nanocrystalline films" } ], [ { "name": "text", "data": "anti-solvent" } ], [ { "name": "text", "data": "yellow LED" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "显示和照明是构成日常生活中的两个主要能源消耗来源，全世界约20%的电力用于发光能耗，因此开发节能LED的新材料和技术至关重要。铅卤钙钛矿发光二极管（PeLED）展现出的宽色域、高亮度以及低成本能够满足人们日益增长的物质需求，有望成为下一代显示和照明技术的替代品。短短7年的时间，PeLED（红、绿、蓝）发展突飞猛进，其性能已接近钻研数十年之久的有机发光二极管（OLED）和量子点发光二极管（QLED）。最近，器件的外量子效率（EQE）在近红外、红和绿光均已突破20%，满足了基本的实际应用需求，并且蓝光LED的EQE也已经达到13.8%，令人振奋" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "然而，发光位于橙黄光波段的铅基PeLED发展较为迟滞。位于540-570 nm波段的光在人眼中能够产生最大的光感和最高的光谱灵敏度，故而黄光LED适用于道路照明、隧道照明以及室内照明，满足安全、舒适、节能的发展潮流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。除此之外黄光LED也是固态照明的重要组成部分，采用多基色LED混合成白光的方式，能够避免荧光粉的使用，消除荧光粉带来的器件性能衰退问题。此外，光遗传学、光治疗和可见光通信等领域黄光LED的身影也处处可见" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "铅卤钙钛矿作为黄色LED的发射体，较目前商用的黄光LED发射体III-V族半导体（如InGaN和AlGaInP）来说，具有成本低、可溶液制备加工，操作简单等优点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通常，铅卤钙钛矿黄光发射体采用混合卤化物的方法来制备。然而，混合卤化物钙钛矿具有固有的相位不稳定性，导致发光器件在持续施加偏压的情况下卤素迁移，器件的发光颜色随之发生明显的变化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。除此之外，重金属Pb对于环境和人体是不友好的，以及材料本身的较差的环境稳定性也一直饱受争议。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "因此，从实际应用的角度来看，寻找新型的无铅和环境稳定的发光体作为替代品，是一条解决上述障碍的可行之路。具有低维结构的三元铜卤化合物因具有可媲美铅卤钙钛矿的光电性能而引起广泛关注。其中，具有一维（1D）链状结构的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料，兼具无毒稳定、环境友好的优势，并且该材料表现出本征的黄光发射，是一种很有前途的无铅卤化物发射体候选物" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Luo等人通过直接蒸发CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "粉末，成功地获得了PLQY超过20%的致密均匀的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，相应的电致发光器件的最大亮度为10 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，EQE为0.02%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Ma等人通过溶液法2020将CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基LED最大亮度提升至47.5 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，EQE为0.17%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Chen等人将具有C—O—C键的添加剂（Tween和聚乙烯氧化物）用于制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，不仅促进空穴的注入和传输，而且可以增强PLQY通过减少发射层的陷阱状态。最终，将CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基LED的效率提高到3.1%，亮度为1570 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然以CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为发射层，最近报道了一些结果，但是器件性能仍然较低，这表明基于铜卤化物的器件性能仍有很大的提升空间。通过适当材料修饰和器件结构优化是实现器件性能提升的必经之路。其中，通过减小晶粒尺寸，限制激子扩散可以有效促进载流子的辐射重组。在这方面，反溶剂处理是一种有效的策略，通过快速提取前驱体溶剂诱导成核生长，可制备出致密度高、晶粒尺寸小的钙钛矿薄膜。例如，Lee等人首次报道了添加剂纳米晶钉扎工程策略，即实现了晶粒尺寸减小，同时也愈合了界面缺陷。所制备PeLED的EQE由2.56%提升至8.79%，提高了243.4%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，Zhang等人采用绿色极性抗溶剂碳酸二甲酯（DMC）作为反溶剂，有效的实现了准二维钙钛矿薄膜的形貌控制，最终显著提高了准二维PeLED的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "按照这个思路，我们通过优化反溶剂工程对CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜生长进行了优化。在甲苯（TL）中加入甲醇（MeOH）制备混合反溶剂，混合反溶剂汉森溶解度参数与前驱液溶剂更为相近，两者互溶更加充分，增强了在薄膜内的扩散范围，从而有助于高效提取溶剂，降低晶粒尺寸。所制备的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜致密均匀、表面平整，其PLQY也得到了显著提高，较初始值提高了47.2%。并且薄膜的激子束缚能显著提升，证明了通过减小晶粒尺寸、限制激子扩散来促进辐射复合，是提高薄膜发光性能的一种有效方法。最终，采用ITO/PEDOT:PSS/Poly-TPD/CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TmPyPB/LiF/Al器件结构，相比于对照器件，基于混合反溶剂策略的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基LED的最大亮度和最高EQE分别提高了5.5倍和1.6倍。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　试剂与仪器" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "碘化铯（CsI，99.99%）和碘化亚铜（CuI，99.99%）从Sigma-Aldrich购买。N、N-二甲基甲酰胺（DMF，99%）、二甲基亚砜（DMSO，99%）、甲苯（MB，99%）、甲醇（MeOH，99%）购自北京化学试剂有限公司。聚（亚乙基二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）、聚[N，N'-双（4-丁基苯基）-N，N'-双苯基联苯胺]（Poly-TPD）、三氧化钼（MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，99.9%）、1，3，5-三[（3-吡啶基）-酚-3-基]苯（TmPyPB）和氟化锂（LiF，99.99%）购自西安宝莱特光电科技公司。所有这些化学材料均直接使用，无需进一步纯化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "仪器：超声波清洗器、超纯水机、等离子清洗机（PDC-32G）、匀胶机（EZ4-S）、加热搅拌器（Thermo Scientific Cimarec+）、手套箱（米开罗那）以及高真空蒸发镀膜机（ZHDS400）。扫描电子显微镜（SEM），仪器型号：JEOL-JSM-6700F/INCA-ENERGY。X射线衍射分析（XRD），仪器型号：Panalytical X’Pert Pro。光致发光光谱（PL），仪器型号：Fluorolog-3型（Horiba）。紫外–可见光分光光度计（UV-vis），仪器型号：UV-3150。X射线光电子能谱仪（XPS），仪器型号：Thermo EESC ALAB 250。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "LED测试系统：源表（Keithley 2400）、锁相放大器（Stanford；SR830-DSP）、光电倍增管（PMTH-S1-R1527）、分光光度计 PR705 Spectra Scan、硅光电探测器（THORLABS; S120VC）、数字光功率计（THORLABS; PM100D）。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜及器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "反溶剂制备：将甲苯和甲醇按体积比的形式混合用于CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的制备。参数分别为1:0、20:1和0:1。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "前驱体溶液制备：将CsI与CuI按照1:2的摩尔比称量，随后加入DMF和DMSO，两者比例为1:1，溶液浓度为0.5 mmol/mL。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基片处理：将衬底依次在玻璃清洗剂、丙酮、无水乙醇、去离子水中清洗10 min，洗净后用吹风机加热吹干。使用前，将清洗好的衬底经紫外臭氧处理25 min后使用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "器件制备：首先将PEDOT:PSS水溶液4000 rpm、60 s旋涂到ITO衬底上，然后在空气环境140 °C退火20 min。之后，将衬底转移到充满氩气的手套箱中，将Poly-TPD氯苯溶液（6 mg/mL）以3000 rpm、60 s旋涂到PEDOT:PSS层上，随即在氩气环境120 °C退火20 min。之后，分别以500 rpm和3000 rpm的转速将CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "前驱体溶液（0.5 M）旋涂在Poly-TPD薄膜的顶部，时间分别为5 s和55 s。距转速停止前15 s，将反溶剂快速滴在薄膜表面，然后在100 °C下退火处理40 min。最后，通过热蒸发的方式（真空压强：1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "Pa），分别蒸镀TmPyPB（40 nm）、LiF（1 nm）和Al（100 nm）。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的形貌表征" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "由于DMSO和DMF溶剂较高的极性，常被用于溶解卤化物材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是DMSO和DMF具有较低的挥发性（沸点：~189 °C，~153 °C），使得在制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜时残留溶剂干燥缓慢，导致CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜在溶剂被完全去除之前持续生长。因此，要想获得具有纳米晶状态的薄膜，应在晶粒持续生长之前迅速去除残留溶剂，为此我们采用了纳米晶钉扎策略" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "展示了两种不同反溶剂制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的机理示意图。首先，选取常用作反溶剂的TL来制备薄膜。TL虽然能够有效提取DMSO和DMF，但是由于其与前驱液溶剂互溶性较差，使得扩散范围不能覆盖整个薄膜，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）所示，导致DMSO和DMF大量残留" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。残留溶剂使晶粒连续生长，致使薄膜终态晶粒尺寸较大，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（d）所示。进而，我们将一定比例（1:20）的MeOH与TL混合，较高极性的MeOH加入提高了反溶剂与前驱液溶剂的互溶性。TL:MeOH可以完全渗透CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜，洗涤DMSO和DMF溶剂，同时诱导残留的溶剂快速共蒸发，使得薄膜迅速结晶，从而形成纳米级晶粒，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（e、f）所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "反溶剂纳米晶钉扎工艺制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜原理图。（a-c、e）旋涂过程中不同抗溶剂的有效扩散范围。（d、f）不同反溶剂制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜的最终宏观状态。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Schematic mechanism of AE-NCP process for CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film formation. （a-c， e） The effective diffusion range of different anti-solvents in the process of spin coating. （d， f） The final macroscopic performance of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film was prepared by AE-NCP." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480734&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480745&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480738&type=", "width": "151.50000000", "height": "91.37290955", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了验证混合反溶剂策略的可靠性，特别是MB与MeOH混合后与前驱体溶剂的溶解特性，我们根据汉森溶解度参数表（总参数（" }, { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "）、色散（" }, { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "）、极性（" }, { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "）和氢键（" }, { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "））将DMSO、DMF、MB和MeOH四者的溶解度参数进行了对比，并列举到" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中进行参考" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "DMSO、DMF、TL和MeOH的汉森溶解度参数表。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Hansen solubility parameters for DMSO， DMF， TL and MeOH." } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Solvent" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "t" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "H" } ] } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "DMSO" } ] }, { "align": "center", "data": [ { "name": "text", "data": "26.7" } ] }, { "align": "center", "data": [ { "name": "text", "data": "18.4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "16.4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "10.2" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "DMF" } ] }, { "align": "center", "data": [ { "name": "text", "data": "24.8" } ] }, { "align": "center", "data": [ { "name": "text", "data": "17.4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "13.7" } ] }, { "align": "center", "data": [ { "name": "text", "data": "11.3" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "TL" } ] }, { "align": "center", "data": [ { "name": "text", "data": "18.3" } ] }, { "align": "center", "data": [ { "name": "text", "data": "8.8" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "MeOH" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "29.6" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "15.1" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "12.3" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "22.3" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480754&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480748&type=", "width": "162.79998779", "height": "24.22864532", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "可知，MeOH的极性与DMSO和DMF更为接近，初步认为三者之间混溶性更佳。相关理论表明，溶解度参数越相似，它们之间的混溶性就越好" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然MeOH溶解度与前驱体溶剂更为相似，但CsI和CuI在MeOH中的溶解度不同，单独使用MeOH会导致杂质相的析出" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，后文中有实验具体验证。所以，将一定比例的MeOH和TL混合，既可以增强TL与前驱体溶剂的互溶性，又不会导致杂质相的产生。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "我们将只采用TL和MeOH制备出的薄膜作为对照组，与采用TL:MeOH混合的样品进行了对比，用以验证上述猜测。我们首先通过SEM和AFM对三个样品的微观形貌进行了表征。显然，TL与MeOH处理的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜与预想的结果一致，但晶粒大小不一、尺寸较大、针孔聚集、覆盖度低，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a、d）和（c、f）所示。这种高表面粗糙度和针孔的存在导致界面接触不良和漏电现象严重，因此将严重限制光电器件的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着MeOH添加到TL后，所制备薄膜的覆盖度得到改善。前驱体溶剂被高效提取以及迅速共蒸发导致晶粒尺寸显著减小，晶粒分布密度增加，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b、e）所示。采用Nano Measure软件提取了AFM图像中50个晶粒的数据，相应的晶粒尺寸分布由如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（g）所示。三种样品晶粒的平均尺寸分别为135.29 nm、34.96 nm和86.45 nm（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "h）。采用TL:MeOH制备的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜晶粒具有最窄的覆盖范围（20~55 nm），再次证明了混合反溶剂是制备高质量纳米晶薄膜的有效策略。表面粗糙度由AFM测试所得，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "h所示，TL和MeOH处理后的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜表面粗糙，均方根粗糙度（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "）值分别为13.22 nm和6.28 nm，而用TL:MeOH处理的样品都呈现出光滑的表面，粗糙度仅为3.73 nm，可见薄膜形貌得到了有效的改善。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同反溶剂制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的形貌。（a-c）俯视扫描电子显微镜图像和（d-f）原子力显微镜图像（分别对应为a、d：TL处理；b、e：TL：MeOH处理；c、f：MeOH处理）。（g）不同反溶剂制备样品的粒度分布图。（h）不同反溶剂制备薄膜的平均晶粒尺寸和R.M.S.粗糙度演化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Morphologies CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films with different anti-solvents. （a-c） Top-view SEM images and （d-f） AFM images of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films prepared with different anti-solvents （a， d： TL-treated， b， e： TL：MeOH-treated， c， f： MeOH-treated）. （g） Grain size distribution with different films. （h） Aerage Size and R.M.S. roughness evolution of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films with different anti-solvents." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480759&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480766&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480762&type=", "width": "148.70129395", "height": "92.60035706", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的物相分析" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "紧接着，我们对不同反溶剂制备的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜进行了XRD测试，来探究薄膜的物相变化。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）所示，三个样品显示出相似的衍射峰，并与正交CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（PDF Card-01-072-9857；空间群，" }, { "name": "italic", "data": [ { "name": "text", "data": "Cmcm" } ] }, { "name": "text", "data": "）的标准卡片吻合。其中，位于10.74°、13.43°、21.57°、21.90°、26.09°、27.05°、32.60°、33.97°、42.86°和43.95°处的衍射峰对应于正交相CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的（110）、（020）、（220）、（130）、（221）、（040）、（330）、（202）、（350）和（242）晶面。然而，采用MeOH作为反溶剂处理的样品，在25.68°处出现了属于CuI的杂质峰，与文献中报道的一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于CsI和CuI在MeOH中的溶解度不同，单独使用MeOH会导致杂质相的析出，影响薄膜性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。并且，采用TL:MeOH制备的薄膜展示出最强的衍射峰值，表明其具有更高的结晶质量。此外，我们利用EDS对该样品进行元素mapping测试（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "b，内嵌EDS谱），可以发现Cs、Cu、I元素在薄膜中均匀分布（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "d-f），三者信号强度与CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "化学计量较为吻合（原子比Cs:Cu:I=16.4:37.1:46.5，近似于1:2:3）。为了证明MeOH的引入不会改变Cu的化合价态，我们对含TL:MeOH处理的样品进行了XPS测试。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "c显示了CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的XPS全谱，检测到了Cs、Cu和I三个元素的相关信号。经C 1s（284.57 eV）峰校准后，Cu 2p谱中两个自旋轨道峰分别位于932.1 eV和951.8 eV（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（h）），两个孤立的峰证明Cu以Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "的形式存在，此外Cs 3d和I 3d的结合能和之前文献一致（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（g、i））" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）不同反溶剂制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的XRD对比。（b、d-f）TL：MeOH制备样品的EDS数据分析。（c）TL：MeOH制备样品的XPS能谱。（g-i）Cs 3d、Cu 2p和I 3d XPS能谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "（a） XRD comparison of CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films prepared by different antisolvents. （b， d-f） EDS data analysis of samples prepared by TL：MeOH. （c） TL： XPS energy spectrum of MeOH prepared samples. （g-i） Cs 3d， Cu 2p and I 3d XPS energy spectra." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480772&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480781&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480776&type=", "width": "148.55313110", "height": "123.19189453", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的光学性能" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "接下来我们对不同条件下所制备薄膜的光学性能进行了评估。首先进行了稳态PL谱和紫外-可见吸收光谱测试。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）和（b）所示，3个样品均表现出宽谱发光特征，中心波长位于~550 nm，吸收边位于~320 nm。MeOH制备的样品出现了额外的发射，属于杂质CuI的本征发射，与XRD结果相符合。相比之下，采用TL:MeOH制备的样品只有源于CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的发射，并展现出最强的发射，这与上面观察到的形貌和结晶度演化趋势很一致。同时，较大的斯托克斯位移（~220 nm）和宽光谱发射（FWHM~100 nm），说明CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "光发射来源于STEs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。晶粒尺寸降低导致激子束缚能力提升，这对于发光来说是有利的。为了更好地解释反溶剂优化处理后的发光增强机制，我们在10-300 K的温度范围内进行了随温度变化的PL测试。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）和（e）显示了两个样品（TL和TL:MeOH制备的样品）的PL积分强度随温度变化的曲线，从中可以看出，发光峰位随温度升高展现出蓝移的现象，该现象可能与温度升高过程中晶格的热膨胀和电子-声子重整化有关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；同时，随着温度升高PL强度逐渐降低，后者表现出更缓慢的热猝灭现象。同时该温度猝灭行为可以根据下式拟合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a、b）不同反溶剂制备CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的PL光谱和吸收光谱。（c、e）TL和TL：MeOH处理CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜在不同温度下的PL谱。（d、f）TL和TL：MeOH改性的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的积分PL强度与温度的函数关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "（a， b） Steady-state PL and absorption spectra with different anti-solvents. （c， e） Temperature-dependent PL spectra of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films with TL and TL：MeOH modification. （d， f） Integrated PL intensity of the CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films with TL and TL：MeOH as a function of reciprocal temperature." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480788&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480798&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480793&type=", "width": "99.99500275", "height": "130.73899841", "fontsize": "" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480808&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480802&type=", "width": "37.76133347", "height": "13.03866673", "fontsize": "" } } }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为0 K时的发光强度，A为比例常数，K为玻耳兹曼常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "是激子结合能。最终拟合结果可得两个样品的" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "值分别为201.6±5.1 meV和234.5±6.4 meV。较高的" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "值有利于激子在室温甚至更高温度下的稳定存在，确保了激子的存活率和高的辐射复合率，有助于获得更高效的发光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于TL:MeOH处理过的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "的提升可归因于晶粒尺寸减小引起的量子限制效应，该现象与在铅基钙钛矿纳米结构中类似" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的PLQY由初始的12.7%（TL制备）提升至18.7%（TL:MeOH），其变化与上述形貌和结晶特性相符合。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件性能" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "为了评估所制备的薄膜在LED应用中的可行性，我们构建了正置结构器件，并对相关器件性能进行了初步的测量。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）展示了所制备LED的结构示意图，相应的异质结构的横截面SEM图像如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）所示，显示了清晰明显的异质界面。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）为各功能层的能带图，电子和空穴可以在外加电压的驱动下进入发光层，实现电致发光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d）展示了CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-LED的电流密度-电压-亮度（J-V-L）曲线。由TL制备薄膜所构建的器件在相同驱动电压下具有更高的电流密度，表明它具有更高的漏电流，这可归因于发光层较多的孔洞所致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从L-V曲线可以看出，器件的开启电压（亮度为1 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时所对应的驱动电压值" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）显著降低，这可归因于薄膜致密度提升有效抑制了器件漏电流，从而使得载流子能够有效地辐射复合。因此，器件的最大亮度由11.53 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "提升至63.37 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。EQE也是评估LED性能的关键参数" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（e）所示，TL:MeOH制备薄膜所构建的器件表现出更高的EQE。其最优EQE为~0.11%，相比于对照器件（~0.07%）提高了1.6倍。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（f）为所构建的基于TL:MeOH的黄色LED的电致发光谱（7.0 V）。从图中可以观察到，光谱的峰位位于~550 nm，没有出现来自载流子传输层的发光寄生现象，说明该器件能够有效地将载流子复合限制在CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "有源层内。插图显示了器件单个发射单元的发光照片（2×2 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "），色坐标位于（0.416，0.517）。此外，为了评估器件的工作稳定性，我们在恒定电压（7.0 V）下对器件的工作寿命进行了测试。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "f插图所示，采用TL:MeOH处理所制备的LED在持续工作40 min后，EL谱的强度没有发生明显的衰减，这表明所制备的器件具有较好的工作稳定性。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "基于CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的LED器件结构和EL性能。（a）器件结构示意图。（b）所制备LED的横截面SEM图像。（c）异质结构器件的能带图。（d）基于TL和TL：MeOH处理的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜LED的电流密度-电压-亮度曲线。（e）经TL和TL：MeOH处理的LED的EQE与电压之间的关系。（f）TL：MeOH处理的LED在7.0 V下捕获的EL谱。插图显示了其相应的照片，发光面积为4 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，国际照明委员会（CIE）色度坐标，恒定电压（7.0 V）下器件在40分钟内的EL谱变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Device structure and EL performances of CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-based LEDs. （a） Schematic diagram. （b） Cross-sectional SEM image of the proposed LEDs. （c） Energy band diagram of the heterostructure device. （d） Current density-voltage-luminance curves of the LEDs based on the TL and TL：MeOH-treated CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films. （e） EQE versus voltage of the TL and TL：MeOH-treated LEDs. （f） The insets show their corresponding photographs with a 4 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " emitting area， Commission internationale de l'éclairage （CIE） coordinates and EL spectra evolution of the TL：MeOH-treated LEDs captured at 7.0 V for 40 min." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480813&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480818&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39480816&type=", "width": "140.00000000", "height": "78.19300079", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结 论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "综上所述，我们通过使用混合反溶剂工程优化了CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的生长。通过将TL与MeOH按一定比例混合后用作反溶剂，成功制备出尺寸为~35 nm的高度均匀、致密的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米晶薄膜。晶粒尺寸的降低导致激子束缚能从~201.6 meV提高至~234.5 meV，薄膜的PLQY提高至为18.7%。最终，所构建的CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基LED实现了明亮的黄光发射，其色坐标位于（0.416，0.517）。同时，EQE从最初的0.07%提高到0.11%，证实了该策略的有效性。上述结果表明，通过混合反溶剂策略调控薄膜形貌和晶粒尺寸，是提高CsCu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基黄光LED的可行性方案之一。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": 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