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1.Advanced Ultraviolet Optoelectronics Co., Ltd, Shanxi 046000, China
2.Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Published Online:20 December 2022,
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王雪,刘乃鑫,王兵等.AlGaN基深紫外LED的NiAu透明电极及其接触特性研究[J].发光学报,
WANG Xue,LIU Nai-Xin,WANG Bing,et al.Investigation on ohmic contact characteristics of AlGaN-based deep-ultraviolet light-emitting- diodes with NiAu transparent electrode[J].Chinese Journal of Luminescence,
王雪,刘乃鑫,王兵等.AlGaN基深紫外LED的NiAu透明电极及其接触特性研究[J].发光学报, DOI:10.37188/CJL.20220385
WANG Xue,LIU Nai-Xin,WANG Bing,et al.Investigation on ohmic contact characteristics of AlGaN-based deep-ultraviolet light-emitting- diodes with NiAu transparent electrode[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20220385
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