Investigation on ohmic contact characteristics of AlGaN-based deep-ultraviolet light-emitting- diodes with NiAu transparent electrode Enhanced Publication

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"GUO", "givenname": "Kai", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "勇强", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Yong-Qiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "童", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Tong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "闫", "givenname": "建昌", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YAN", "givenname": "Jian-Chang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "晋闽", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Jin-Min", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "山西中科潞安紫外光电科技有限公司， 山西　046000", "data": [ { "name": "text", "data": "山西中科潞安紫外光电科技有限公司， 山西　046000" } ] }, { "lang": "en", "label": "1", "text": "Advanced Ultraviolet Optoelectronics Co.， Ltd， Shanxi 046000， China", "data": [ { "name": "text", "data": "Advanced Ultraviolet Optoelectronics Co.， Ltd， Shanxi 046000， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院半导体研究所半导体照明技术研究开发中心， 北京　100083", "data": [ { "name": "text", "data": "中国科学院半导体研究所半导体照明技术研究开发中心， 北京　100083" } ] }, { "lang": "en", "label": "2", "text": "Semiconductor Lighting Technology Research and Development Center， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China", "data": [ { "name": "text", "data": "Semiconductor Lighting Technology Research and Development Center， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "在p-AlGaN表面沉积Ni/Au/Ni/Au透明电极体系，通过传输线模型测试，研究了退火温度对Ni/Au/Ni/Au与p-AlGaN材料接触特性的影响。结果表明，AlGaN基深紫外LED采用Ni/Au/Ni/Au金属体系，在600 ℃空气氛围下退火3 min形成p型半导体材料NiO。进一步优化Ni/Au/Ni/Au体系金属厚度，当Ni/Au/Ni/Au各层厚度由20/20/20/20 nm减薄至2/2/5/5 nm，并在600 ℃空气氛围退火3 min，其与p-AlGaN材料的接触电阻率从3.23×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "降到2.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。采用上述优化的Ni/Au/Ni/Au体系，制备的深紫外LED器件，器件光电特性得到改善：在150 mA驱动下工作电压低至5.8 V；通过提升电极透过率，光输出功率提升18.9 %。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "A Ni/Au/Ni/Au transparent electrode system was deposited on the surface of p-AlGaN， and the effects of annealing temperature on the contact characteristics of Ni/Au/Ni/Au with p-AlGaN were studied by transmission line model. When the AlGaN -based deep ultraviolet LED adopted Ni/Au/Ni/Au metal system， meanwhile annealed at 600 ℃ for 3 min， the results show that p-type semiconductor material NiO can be formed in the contact interface. The metal thickness of Ni/Au/Ni/Au system was further optimized. When the Ni/Au/Ni/Au layers were thinned from 20/20/20/20 nm to 2/2/5/5 nm，with the annealing condition at 600 ℃ for 3 min， the specific contact resistivity decreased from 3.23×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " to 2.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": "Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ". Using the above optimized Ni/Au/Ni/Au system into LED chip process， the photoelectric characteristics of the LED device can be improved drastically： the operating voltage was reduced to 5.8V at 150 mA， as the increase of the electrode transmittance， the optical output power was increased by 18.9 % at the same current." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "UV-LED" } ], [ { "name": "text", "data": "AlGaN" } ], [ { "name": "text", "data": "NiAu" } ], [ { "name": "text", "data": "欧姆接触" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "UV-LED" } ], [ { "name": "text", "data": "AlGaN" } ], [ { "name": "text", "data": "NiAu" } ], [ { "name": "text", "data": "specific contact resistivity" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "随着280 nm以下波段的深紫外光在水体、固体的杀菌消毒，生物检测和医疗等方面的广泛应用，以第三代氮化物材料制备的小型高效的深紫外发光二极管（LED）进入了人们的视野" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。AlGaN氮化物半导体是一种直接带隙的宽禁带材料，通过调整AlGaN材料中的Al组分，得到可在3.4 ~ 6.1 eV连续调节的宽禁带材料，其发光波长覆盖范围为210 ~ 360 nm，因此AlGaN氮化物半导体是制备深紫外LED的优选材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于受到材料激活效率的限制，深紫外LED普遍采用p-GaN作为空穴提供层，但GaN材料对深紫外波段的光存在严重的吸收，深紫外LED有源区辐射的光很难通过表面发射出来。因此采用透明的p-AlGaN接触层替换p-GaN接触层，这是深紫外LED行业一个重要的发展趋势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Takano等首次报道了采用p-AlGaN接触层替代传统的p-GaN接触层，减弱向上传播时的光吸收，提高LED光输出功率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "制备高导电性的p-AlGaN面临以下两个挑战点：（1）随着Al含量的提升，p-AlGaN材料的功函数越高。根据金属-半导体接触理论，只有功函数大于p-AlGaN材料才能与其形成良好的欧姆接触。（2）p-AlGaN材料的Mg受主离化能高、离化率低，难以实现高空穴浓度 " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。针对AlGaN材料的欧姆接触的特性，国内外许多学者开展了多方面的研究。 Kyeong Heon Kim 等利用电击穿的方法，在芯片上形成导电通道，改善金属-半导体之间接触特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。徐帅等在Ag/p-GaN层之间插入一层金属Ni，采用“牺牲Ni处理方法”提高了Ag/p-GaN之间的接触性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。王雪等采用ITO/Al通过热处理的方式形成透明导电薄膜，优化与p-GaN材料间的接触特性，提升芯片光功率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Siva Pratap Reddy Mallem等采用Pd/Al/Au金属体系在p-AlGaN表面形成低欧姆接触" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Shirong Zhao等报道了Ni/Au体系，采用空气退火与p-GaN形成良好的欧姆接触，并对金属体系的高温稳定性进行了研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Noritoshi Maeda等系统研究了Ni/Au和Ni/Al两种金属体系对AlGaN基的性能优化情况，结果表明Ni/Au金属体系的欧姆接触优于Ni/Al金属体系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Hu等采用电子显微镜和x射线光电子能谱，对p型AlGaN/GaN半导体中低电阻Ni/Au/Ni/Au的欧姆接触进行了详细的研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。我司研发中心对比研究了双层金属NiAu和多层复合金属NiAuNiAu与p-AlGaN之间的接触特性，实验结果表明在高功函数的p-AlGaN表面蒸镀多层复合金属NiAuNiAu，有利于金属-半导体之间形成欧姆接触。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本论文重点研究了低电阻体系Ni/Au/Ni/Au与p-AlGaN半导体间的接触特性。通过对Ni/Au/Ni/Au体系厚度的调整，使得金属-半导体间的接触由肖特基接触优化为欧姆接触，显著改善了金属-半导体间的接触效果。通过减薄体系厚度，明显改善电极体系的透光率，提升器件光输出功率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "选择（0001）晶面的蓝宝石衬底，采用金属有机化学沉积的方法在蓝宝石衬底上生长一层约3μm左右的AlN缓冲层，在AlN缓冲层上依次生长约300 nm的AlGaN缓冲层、2.5 μm Si掺杂的n-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "N层、3个周期未掺杂的AlGaN的多量子阱、100 nm的电子阻挡层和50 nm Mg掺杂的p-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N层。在750℃氮气氛围中退火10 min来激活p-AlGaN层中的Mg受主，完成外延片的制作。随后采用硫酸双氧水混合试剂在85 ℃ 水浴条件下清洗外延片，采用丙酮超声清洗去除外延片上的有机杂质。通过标准的芯片制作工艺，采用ELEDE 380G感应耦合高密度等离子体刻蚀机，刻蚀得到传输线模型（TLM）台面，采用EVA-601高真空蒸发镀膜机，在p-AlGaN表面沉积金属Ni/Au/Ni/Au；然后使用JetFirst300C快速退火炉在550 ℃ ~ 650 ℃的条件下对金属快速退火，退火时间为3 min，退火氛围空气。采用CS­4探针台，测量间距为20 μm的传输线模型电极间的I-V曲线，测试条件为-1 V～1 V范围内的电压扫描。为保证数据准确性，本次实验均在退火后及时测量。采用扫描电子显微镜能谱仪（EDS）观察退火后金属体系的元素变化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过标准的芯片制作工艺，制备峰值波长为275 nm，尺寸为250 μm× 460 μm 的深紫外LED，Ti/Al/Ti/Au作为芯片的n电极（850 ℃氮气氛围退火3 min），Ni/Au/Ni/Au作为芯片的p电极（600 ℃空气氛围退火3 min），并在接触电极表面蒸镀反射率较高的反射金属Al（R＞85 %）电极作为扩展电极，在此基础上制作焊盘电极，完成芯片器件制作。利用电致发光探针测试系统测试深紫外LED 芯片的工作电压和光输出功率，并获得芯片的电流­光输出功率和电流­电压的特性曲线。芯片截面结构示意图如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "芯片截面示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Cross-sectional schematic of chip" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923499&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923501&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923500&type=", "width": "77.69583130", "height": "55.76411057", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果及讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "实验中使用高真空蒸发镀膜机在p-AlGaN基底上沉积Ni/Au/Ni/Au作为传输线模型电极。Ni/Au/Ni/Au电极的厚度信息如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，退火氛围均为空气：样品1表示Ni/Au/Ni/Au厚度分别为20nm、20nm、20nm、20nm；样品2表示Ni/Au/Ni/Au厚度分别为5nm、5nm、20nm、20nm；样品3表示Ni/Au/Ni/Au厚度分别为5nm、5nm、10nm、10nm；样品4表示Ni/Au/Ni/Au厚度分别为2nm、2nm、5nm、5nm。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "Ni/Au/Ni/Au电极的厚度信息" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "The thickness information of " }, { "name": "bold", "data": [ { "name": "text", "data": "Ni/Au/Ni/Au" } ] }, { "name": "text", "data": " electrodes" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "样品编号" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "样品厚度/nm" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "退火氛围" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "1" } ] }, { "align": "center", "data": [ { "name": "text", "data": "20/20/20/20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "Air" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "2" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5/5/20/20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "Air" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "3" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5/5/10/10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "Air" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "4" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "2/2/5/5" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "Air" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923503&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923502&type=", "width": "77.69583130", "height": "20.46386719", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "为样品1经过550 ℃、600 ℃、650 ℃空气氛围退火后，样品1在-1 V～1 V电压范围的电流值变化曲线。从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "曲线得出，样品1在空气氛围退火后，电压为1 V时的电流值比未退火的电流值提高一个数量级，可达到12 μΑ。样品1经过550 ℃、600 ℃、650 ℃空气氛围退火后，电流值随温度的升高表现出先增加后减小的趋势，退火温度为600 ℃时电流值最佳。但从曲线图形来看，该体系在空气退火后与p-AlGaN之间的接触仍属于肖特基接触，未能形成完美的欧姆接触。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "样品1（20/20/20/20 nm）在空气氛围下不同退火条件的I-V特征图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "I-V characteristics of sample 1 （20/20/20/20 nm） annealed at different temperatures in Air" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923504&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923506&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923505&type=", "width": "77.69583130", "height": "57.86045837", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Chen" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等人研究了Ni/Au体系在p-GaN基底上的接触情况，研究表明Ni和O的亲和能大于Au，Ni会向Au表面扩散，与O结合形成p型半导体NiO，Au扩散在NiO层之间形成了良好的欧姆接触。由于Ni倾向于通过Au薄膜的缺陷扩散到表面与O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "反应，形成NiO导电膜，提高金属-半导体之间的欧姆接触。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "是采用EDS分析Ni/Au/Ni/Au体系在600 ℃空气氛围下退火3 min的金属体系侧面元素分布情况。结果表明，在p-AlGaN表面Ni和O结合形成p型半导体NiO，从而改善金属与半导体之间的欧姆接触。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）中顶部O的含量比较多是由于Al扩展电极氧化所致。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "是将多层复合金属第一层金属Ni和第二层金属Au由20/20 nm减薄至5/5 nm，在550 ℃、600 ℃、650 ℃空气氛围退火后，测量电极间的I-V曲线。对比" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "曲线得出同一退火条件下，减薄底层Ni/Au厚度，退火后的电流值增加，电流值随退火温度的升高变化规律未变。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "NiAuNiAu体系的EDS图（a）结构图，（b）Ga，（c）O，（d）Ni" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "EDS of the oxidized NiAuNiAu film. （a） Structure chart， （b） Ga mapping， （c） O mapping， （d） Ni mapping." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923507&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923509&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923508&type=", "width": "77.69583130", "height": "60.86008835", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "样品2（5/5/20/20 nm）在空气氛围下不同退火条件的I-V特征图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "I-V characteristics of sample 2 （5/5/20/20 nm） annealed at different temperatures in Air" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923510&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923512&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923511&type=", "width": "77.69583130", "height": "56.84474564", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "是不同样品在最佳退火温度600 ℃条件下空气氛围退火得到的I-V特征图。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，随着金属体系的减薄，I-V曲线图形逐渐从曲线变成直线，说明金属-半导体的接触从肖特基接触变成欧姆接触，形成低电阻接触。从图中曲线可以看出，随着Ni/Au/Ni/Au体系的减薄，电流值逐渐增大，样品4（2/2/5/5 nm）在600 ℃空气氛围下退火电流值达到15 μΑ。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同样品在600 ℃空气氛围下退火得到的I-V特征图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "I-V characteristics of different samples annealed at 600 ℃ in Air" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923513&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923515&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923514&type=", "width": "77.69583130", "height": "58.39254761", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了更准确的了解各样品与p-AlGaN之间的接触情况，从传输线模型中提取出各样品的电阻率和方块电阻，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "是样品1到样品4在空气氛围下600 ℃退火3 min后，从传输线模型中提取出的电阻率和方块电阻值。从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中来看，随着Ni/Au/Ni/Au体系的减薄，电阻率和方块电阻总体表现为下降的趋势。从图中可以看出样品的电阻率从3.23×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "降到2.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，降低了3个数量级，由此可以看出减薄体系的厚度，有利于改善金属-半导体间的欧姆接触。从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中看出各样品之间方块电阻由2.64×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " Ω/□降到1.24×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " Ω/□，体系厚度的变化对金属-半导体间的方块电阻影响不大。这是由于合适的退火温度下，p层材料的Ga空位增加，改善材料表面的载流子浓度，降低金属-半导体间的欧姆接触。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同样品的电阻率和方块电阻曲线图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Specific contact resistivity （ρ" }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "） and sheet resistance （R" }, { "name": "sub", "data": [ { "name": "text", "data": "sh" } ] }, { "name": "text", "data": "） of various samples" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923516&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923518&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923517&type=", "width": "71.32666016", "height": "46.48525620", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Jin-Kuo Ho" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "曾报道过由于Kirkendall效应的存在，Ni/Au体系在氧气氛围下退火后Ni和O反应生成透明的NiO半导体，同时Au原子向GaN表面扩散，最终可获得Au原子均匀的扩散在NiO半导体层中的导电膜。在该理论支撑下，若Ni/Au/Ni/Au体系足够薄，可获得透明的薄膜。本文考虑到电极扩展效应，选择Ni/Au/Ni/Au体系膜厚为2/2/5/5 nm的样品4作为电极金属，在空气氛围下退火后可获得半透明金属体系，采用紫外分光光度计对该体系进行透过率测试。结果表明，样品4在270 nm~280 nm深紫外波段的透过率约为20.3 %，曲线如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "样品1（20/20/20/20 nm）和样品4（2/2/5/5 nm）的透过率曲线图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Transmittance curves of sample 1 （20/20/20/20 nm） and sample 4 （2/2/5/5 nm）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923519&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923521&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923520&type=", "width": "72.95486450", "height": "53.89121246", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "本文将样品1和样品4作为p-AlGaN层的接触电极，金属Al做为扩展电极，制备峰值波长为275 nm，尺寸为250 μm× 460 μm 的深紫外LED芯片器件。对比两种芯片器件的电流­光输出功率和电流­电压曲线，数据如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "所示。结果表明采用样品4制备的半透明电极芯片器件具有更高的透过率，制备的深紫外芯片器件相对于样品1制备芯片器件，光在150mA的电流下，输出功率提升了18.9 %，电压由6.8 V降低至5.8 V。从图中曲线可以看出，在30 mA测试条件下，样品1和样品4的光输出功率相差不大，这一现象是由于在低电流条件下，电流扩展好的接触电极有利于提升芯片器件的光输出功率。随着电流的增大，提升芯片器件的光输出功率，反射起主要的作用。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "样品1（20/20/20/20 nm）和样品4（2/2/5/5 nm）的电流-光输出功率曲线图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Current-output power characteristic curves of sample 1 （20/20/20/20 nm） and sample 4 （2/2/5/5 nm）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923522&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923524&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923523&type=", "width": "73.12265015", "height": "55.48733521", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "样品1（20/20/20/20 nm）和样品4（2/2/5/5 nm）的电流-电压曲线图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Current-voltage characteristic curves of sample 1 （20/20/20/20 nm） and sample 4 （2/2/5/5 nm）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923525&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923527&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37923526&type=", "width": "77.69583130", "height": "57.11901855", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结 论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "在p-AlGaN表面沉积Ni/Au/Ni/Au体系，通过测量间距为20 μm的两电极之间传输线，系统研究了不同Ni/Au/Ni/Au体系条件下的欧姆接触情况。结果表明，在空气氛围下退火3 min，随着Ni/Au/Ni/Au体系的金属厚度减薄，金属与p-AlGaN半导体间的接触由肖特基接触变为欧姆接触，电阻率由3.23×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "降到2.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Ω·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，降低了3个数量级，明显改善了金属-半导体间的欧姆接触。采用标准的芯片制作工艺，制备峰值波长为275 nm，尺寸为250 μm× 460 μm 的深紫外芯片器件。结果表明：采用样品4可获得透过率为20.3 %的半透明电极，对比样品1（20/20/20/20 nm）制备的芯片器件，样品4（2/2/5/5 nm）制备的芯片器件在150mA的电流下，光输出功率提升了18.9 %，电压由6.8 V降低至5.8 V。该结果与I-V曲线对应，说明优化样品厚度可得到理想的低电阻欧姆体系。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PENG X C" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GUO W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XU H Q" }, { "name": "text", "data": "，" }, { "name": 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