Effect of deposition parameters on the luminescence properties and structure evolution of CsPb<sub>2</sub>Br<sub>5</sub> phase in cesium lead bromide perovskite films

LIN shu-di; WU haixia; SONG jie; HUANG rui; LYU you-ming

doi:10.37188/CJL.20220335

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Effect of deposition parameters on the luminescence properties and structure evolution of CsPb₂Br₅ phase in cesium lead bromide perovskite films

Updated：2022-11-24

- Effect of deposition parameters on the luminescence properties and structure evolution of CsPb₂Br₅ phase in cesium lead bromide perovskite films Enhanced Publication
- Chinese Journal of Luminescence Vol.null, Issue null, (2022)
- Affiliations：
  
  School of Materials， Shenzhen University,Shenzhen,China,518060;School of Materials Science and Engineering， Hanshan Normal University,Chaozhou,China,521041
- Author bio：
- Funds：
  
  National Natural Science Foundation of China(12104117);Natural Science Foundation of Guangdong Province(2020A1515010432)
- DOI：10.37188/CJL.20220335 CLC：
- Published Online：24 November 2022，
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林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb₂Br₅相结构演变和发光特性的影响[J].发光学报,

LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb₂Br₅ phase in cesium lead bromide perovskite films[J].Chinese Journal of Luminescence,
林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb₂Br₅相结构演变和发光特性的影响[J].发光学报, DOI：10.37188/CJL.20220335

LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb₂Br₅ phase in cesium lead bromide perovskite films[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20220335

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"深圳大学，材料学院，广东深圳　518060", "data": [ { "name": "text", "data": "深圳大学，材料学院，广东深圳　518060" } ] }, { "lang": "en", "label": "1", "text": "School of Materials， Shenzhen University， Shenzhen 518060， China", "data": [ { "name": "text", "data": "School of Materials， Shenzhen University， Shenzhen 518060， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "韩山师范学院，材料科学与工程学院，广东潮州　521041", "data": [ { "name": "text", "data": "韩山师范学院，材料科学与工程学院，广东潮州　521041" } ] }, { "lang": "en", "label": "2", "text": "School of Materials Science and Engineering， Hanshan Normal University， Chaozhou 521041， China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering， Hanshan Normal University， Chaozhou 521041， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "基于化学气相沉积（CVD）法制备的铯铅溴钙钛矿薄膜具有优异的光电特性，然而薄膜通常存在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "两个不同的相结构区域。本文通过CVD法制备了铯铅溴钙钛矿薄膜，并利用X射线衍射（XRD）、扫描电镜（SEM）、电子能谱仪（EDS）及荧光光谱仪研究了反应气压与N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量对其中的CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构的影响。实验结果表明，反应气压的变化对CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构无影响，与此不同，随着N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的减少，薄膜中部分CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构逐渐转变为CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相结构，其发光也由以~620nm为主的宽带发射转变为以~525nm为主的窄带发射。实验表明N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量是调控CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构和发光特性的有效手段。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The cesium lead bromide perovskite thin films prepared by chemical vapor deposition （CVD） have excellent optoelectronic properties， but the thin films generally have two different phase structures， CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": ". In our work， CVD method is considered to prepare cesium lead bromide perovskite thin films， and the effects of reaction pressure and N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow on CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " in the thin films were studied by X-ray diffraction （XRD）， scanning electron microscopy （SEM）， energy dispersive spectroscopy （EDS） and fluorescence spectrometer. The results show that the change of the reaction pressure has no effect on the CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5 " } ] }, { "name": "text", "data": "phase. However， with the decrease of the N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow， part of the CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5 " } ] }, { "name": "text", "data": "phase in the film gradually transforms into the CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "phase， and its luminescence also converts from a broadband emission dominated by ~640nm to a narrowband emission dominated by ~525nm. Experimental results reveal that N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow is an effective means to control the phase structure and luminescence properties of CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "化学气相沉积" } ], [ { "name": "text", "data": "铯铅溴钙钛矿薄膜" } ], [ { "name": "text", "data": "CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "CVD" } ], [ { "name": "text", "data": "cesium lead bromide perovskite film" } ], [ { "name": "text", "data": "CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] } ], [ { "name": "text", "data": "CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "全无机卤化物钙钛矿材料因具有高发光量子产率、可调谐的带隙、高载流子迁移率、高的缺陷容忍度等优异性能而在太阳能电池、激光器、探测器和发光二极管器件得到广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5", "R6", "R7", "R8" ], "text": "1-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前已发展了多种制备全无机卤化钙钛矿材料的方法，如热注入法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、过饱和结晶法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、一步旋涂法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "与化学气相沉积法（CVD）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。CVD法其可制备大面积、高质量、元素均匀分布和缺陷密度低的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，且工艺简单、可控，而成为一种非常有前景的制备技术。刘新风课题组通过调控CVD的生长温度在蓝宝石衬底上实现大面积高质量、低缺陷密度单晶CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的制备，并在室温下获得阈值为8 μJ cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "的放大自发辐射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Xu等人利用CVD法在750℃条件下生长了陷阱态密度低、晶粒尺寸大的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相钙钛矿薄膜，基于该薄膜构建的光电探测器具有3.2 × 10 " }, { "name": "sup", "data": [ { "name": "text", "data": "-8 " } ] }, { "name": "text", "data": "A的光电流和~ 2.5 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "的高开/关比" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。尽管基于CVD法制备的钙钛矿薄膜取得了突破性的进展，然而，由于CsBr与PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "两者熔点差异大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，且CVD生长区域存在温差，这导致了所生长的薄膜结构不均匀，存在CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "和 CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "等不同相结构区域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R15", "R16", "R17" ], "text": "15-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "，理论计算表明CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "是间接带隙材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，电子空穴无法通过导带与价带间的跃迁直接复合发光，发光效率低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。显然，CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "的存在无疑会限制CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜在高效发光器件的应用。因此，对CVD法制备的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜中CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "的调控尤为重要。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过CVD法制备了铯铅溴钙钛矿薄膜，并利用XRD、扫描电镜、电子能谱仪及荧光光谱仪研究了反应气压与N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量对其中的CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构的影响。实验表明N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量是调控CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构和发光特性的有效手段，而反应气压的变化对CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构无影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　薄膜制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本文利用化学气相沉积方法，以CsBr与PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为前驱体制备大面积铯铅溴钙钛矿薄膜。实验药品为西安宝莱特光电科技公司生产的纯度99.9% 的CsBr、PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "粉末，其质量比为1：2。称取总量为0.15g的 CsBr与PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "粉末，并将其分别置于管式炉的加热中心区域，两者相距1cm。将长*宽为8*1cm的氧化硅衬底（氧化层厚度为300nm的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si单晶基底）放置管式炉下游位置，通过控制抽气口实现对其生长气压的调控。管式炉的本底真空为6帕，通入高纯度N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为载气，炉管中心温度为630℃，样品放置处所对应区域①的温度约为360℃±20℃，区域②的温度约为260℃±20℃。薄膜生长时间为5min。薄膜生长完成后掀开炉盖让其自然降温，并停止载气的通入，待炉温冷却后取出样品。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了研究不同制备工艺参数对薄膜的影响，实验中在N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量为30sccm条件下，改变反应气压：50pa、100pa、150pa、200pa、300pa；以及在气压为100pa条件下，改变N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量：5sccm、10sccm、20sccm、30sccm、60sccm。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　薄膜表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "在室温下，利用LabRAM HR Evolution高分辨拉曼光谱仪、Edinburgh FLS980光谱仪在325nm的光激发下测量薄膜的发光光谱，利用场发射扫描电子显微镜（SU5000）观测薄膜表面形貌，利用电子能谱仪分析元素成分，利用D8 Advance X-射线衍射仪表征物相结构。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "显示不同反应气压条件下制备的全无机铯铅溴钙钛矿薄膜照片，由图可知，所制备的薄膜均存在两个明显不同的区域（黄色区域①和淡蓝色区域②）。XRD分析表明区域①的薄膜呈现CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单斜相特征结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而区域②的薄膜呈现CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "四方相特征结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如图" }, { "name": "xref", "data": { "text": "2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "(a)和" }, { "name": "xref", "data": { "text": "2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "(b)所示。对于区域①，由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）还可知，100pa 条件下制备的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的主峰半高宽最窄，且其峰强较强，这表明100pa条件下，薄膜CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶粒最大，晶化度高。而随着反应气压的增大，主峰半高宽增大，且峰强减弱，这表明随着反应气压的增大，晶粒变小，结晶度降低。对于区域②，由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）可知，CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜主峰强度随着反应气压的增大而略微增强，半高宽则无明显变化，这表明反应气压对CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜的结构影响小。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "不同反应气压条件下制备的全无机铯铅溴钙钛矿薄膜照片（黄色区域①和淡蓝色区域② ）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Photographs of all-inorganic cesium lead bromide perovskite films prepared with different reaction pressures （yellow area ① and light blue area ②）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213815&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213817&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213816&type=", "width": "60.30920410", "height": "87.68312073", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同反应气压下制备的薄膜的XRD图谱. （a）区域①CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜（PDF#18-0364；（b）区域②CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜（PDF#25-0211）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "XRD patterns of films with different reaction pressures. （a） CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "film （PDF#18-0364） of area ①；（b） CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " film （PDF#25-0211） of area ②" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213818&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213820&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213819&type=", "width": "60.80597687", "height": "92.83869934", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "的PL谱分析表明在325nm波长激发下区域①的薄膜展现主峰位于~530nm的发射光谱，与CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的特征发光峰相吻合。我们注意到PL 谱可以分解为一个发光峰位于 528 nm的窄谱和一个发光峰位位于540 nm的宽谱。根据文献报道，高能侧的窄发射光谱源于自由激子辐射复合，低能侧的宽发射光谱则源于Br空位缺陷引起的束缚激子辐射复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R22", "R23", "R24", "R25" ], "text": "22-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与区域①不同，区域②的薄膜则呈现主峰位于~630nm的宽带弱发射峰，该峰为CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "自陷激子态引起的光发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "的扫描电子显微镜照片显示不同反应气压下制备的薄膜的表面形貌，由" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(a)-(c)可知区域①的薄膜表面颗粒尺寸均较大，约5—10um。相反，(d)-(f)显示区域②的薄膜颗粒尺寸均较小，从SEM图可看出，随着反应气压的增大，颗粒尺寸逐渐由约1µm减小至约0.5µm。这可能是由于反应气压的增大，提高了反应腔体内的分子数密度，使得生长速率变快，进而不利于晶粒长大。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同反应气压下制备的薄膜的发光谱. （a）区域①CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜；（b）区域②CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "PL spectra of films with different reaction pressures. （a） CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "film of area ①；（b） CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5 " } ] }, { "name": "text", "data": "film of area ②" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213821&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213823&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213822&type=", "width": "65.81099701", "height": "92.42800140", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同反应气压下制备的薄膜的SEM图. （a）-（c） 50pa、150pa、300pa的区域①CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜；（d）-（f） 50pa、150pa、300pa的区域②CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "SEM images of films with different reaction pressures. （a）-（c） 50pa、150pa、300pa of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film of area ①；（d）-（f） 50pa、150pa、300pa of CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " film of area ②" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213824&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213826&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213825&type=", "width": "73.99500275", "height": "66.49900055", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）还可发现，100Pa条件下制备的区域①薄膜PL最强，300Pa条件下制备的区域①薄膜PL最弱，结合" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "的SEM结果分析，我们认为这主要由于100Pa条件下制备的薄膜晶粒尺寸大，而300Pa条件下制备的薄膜晶粒尺寸小，晶粒变小导致晶界增加，表面态增多，进而导致非辐射复合中心增多，发光变弱。在以上研究的基础上，我们进一步研究反应气压为100pa的条件下不同流量对区域②薄膜相结构的影响。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "显示不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量条件下制备的全无机铯铅溴钙钛矿薄膜照片，由图可知，在N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量为60sccm时，所制备的薄膜与" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "相似，存在两个明显不同的区域，分别对应黄色区域①与淡蓝色区域②。然而，随着N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量逐渐减小，区域②的淡蓝色面积逐渐变小，当流量减小为5sccm时，区域②转变为黄色，与区域①趋于一致。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量条件下制备的全无机铯铅溴钙钛矿薄膜照片" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Photographs of all-inorganic cesium lead bromide perovskite films prepared with different N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213827&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213829&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213828&type=", "width": "61.11899948", "height": "87.71800232", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "的XRD分析表明在N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量为60sccm时，区域②的薄膜呈现CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "四方相结构特征，随着N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的减小，区域②薄膜相结构逐渐发生变化，当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量为5sccm时，薄膜呈现CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "和CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的混合相结构，这说明减少N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量有利于区域②薄膜CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "四方相向CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单斜相转变。由" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "还可知，随着氮气流量从10sccm降低至5sccm时，CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相的衍射主峰强度略有增强，但半高宽无明显变化。由" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "的PL谱可知，在325nm波长激发下，当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量为60sccm时，区域②的薄膜呈现主峰位于~630nm的宽带弱发射峰。当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量减小为5sccm时，薄膜的光发射显著增强，并且发光峰位蓝移至~530nm，其半高宽明显变窄，结合" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "的XRD分析结果可知，光发射特性随N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的显著变化可归咎于CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "四方相向CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单斜相的转变。我们注意到当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量从10sccm减小为5sccm时，PL的峰值发生了红移，这可能为束缚激子辐射复合所导致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } } ], "rid": [ "R25", "R26" ], "text": "25-26", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量区域②薄膜的XRD图谱，其中CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（PDF#18-0364）、CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "（PDF#25-0211）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "XRD patterns of films with different N" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "flows at area ② （the marked diffraction peaks of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film (PDF#18-0364) and CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " film (PDF#25-0211))" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213830&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213832&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213831&type=", "width": "70.94400024", "height": "54.32799911", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量区域②薄膜的PL图谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "PL spectra of films with different N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow at area ②" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213833&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213835&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213834&type=", "width": "69.97299194", "height": "60.95999908", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "显示区域②薄膜的扫描电子显微图片，由" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "可知，当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量为60sccm时，薄膜颗粒尺寸较小，约为0.5-1um，随着N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的减小，颗粒尺寸不断增大，当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量减小为5sccm时，其颗粒尺寸增大至约2-5um。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "给出区域②薄膜Cs、Pb、Br元素的含量比随不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的变化关系，其中的Cs、Pb、Br元素含量比由EDS能谱测得。由图可知，随着N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的减小，薄膜中Cs、Pb、Br的原子百分比变化明显，当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量由60sccm减少至5sccm时，薄膜中Cs、Pb、Br的原子百分比由1：2：5转变为接近1：1：3。这也进一步证明了薄膜中CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "四方相向CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单斜相的转变。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量区域②薄膜的SEM图（a）5sccm；（b）30sccm；（c）60sccm" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "SEM images of films with different N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow at area ② （a）5sccm；（b）30sccm；（c）60sccm" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213836&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213838&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213837&type=", "width": "57.83800125", "height": "107.20899963", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "由EDS能谱所得到的区域②薄膜Cs、Pb、Br元素含量随不同N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量变化的比例图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "The elemental content of Cs、Pb、Br ratio chart of films obtained by EDS results with different N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " flow at area ②" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213839&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213841&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37213840&type=", "width": "69.49700165", "height": "58.34899902", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在我们实验中，相比于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相结构，形成CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构所需能量较低。由于区域①更靠近加热源，其所获得的能量相对更高，故容易形成CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相，在同样的反应气压和氮气流量下，由于PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(917℃@1atom and 20.75 kJ mol" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " )的蒸发温度与升华焓均比CsBr(1300℃@1atom and 23.64 kJ mol" }, { "name": "sup", "data": [ { "name": "text", "data": "-1 " } ] }, { "name": "text", "data": ")低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，同时，区域②的温度比区域①低，使得区域②形成富PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，易形成CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜。另一方面，在气压恒定的条件下，流量越大，气相中反应分子基团平均获得的能量越少，同时，流量越大，反应分子基团在反应区域停留的时间也越短" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。显然，较大的N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量不利于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶核的形成和生长，这可能是导致N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量（大于等于20sccm）条件下在区域②生长的是CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构，而不是CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相结构的原因。相比于大的N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量条件，当N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量（小于等于10sccm）较小时，气相中反应气体分子平均可获得更多的能量，同时由于流量变小，反应气体分子在反应区停留的时间也变长，这无疑有助于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶核的形成和生长，我们认为这可能是导致低N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量条件下区域②薄膜中CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "四方相向CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单斜相转变的主要原因。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过CVD法制备了铯铅溴钙钛矿薄膜，并研究了反应气压与N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量对其中的CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构的影响。研究结果表明，反应气压的变化对薄膜中CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构无影响，而N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "流量的减少则使得薄膜中部分CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构逐渐转变为CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相，并且颗粒尺寸变大，其发光也由以~640nm为主的宽带发射转变为以~525nm为主的窄带发射。实验表明N" }, { "name": "sub", "data": [ 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" }, { "name": "text", "data": "Chinese Physics Letters" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2004" }, { "name": "text", "data": "， " }, { "name": "text", "data": "21" }, { "name": "text", "data": "：" }, { "name": "text", "data": "1168" }, { "name": "text", "data": "." } ], "title": "Fast growth of polycrystalline film in SiCl4/H2 plasma" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220335", "clc": [], "dc": [ { "name": "text", "data": "D" } ], "publisherid": "1000-7032（XXXX）XX-0001-07", "citeme": [ { "data": [ { "name": "text", "data": "林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "相结构演变和发光特性的影响[J].发光学报,DOI:10.37188/CJL.20220335" } ], "text": "林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响[J].发光学报,DOI:10.37188/CJL.20220335" }, { "data": [ { "name": "text", "data": "LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " phase in cesium lead bromide perovskite films[J]" }, { "name": "text", "data": ".Chinese Journal of Luminescence,DOI:10.37188/CJL.20220335" } ], "text": "LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb2Br5 phase in cesium lead bromide perovskite films[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220335" } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（12104117）、广东省自然科学基金（2020A1515010432）" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China（12104117）； Natural Science Foundation of Guangdong Province（2020A1515010432）" } ] } ], "history": { "epub": "2022-11-24", "opub": "2022-11-24" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "originalSource": [] }

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Effect of deposition parameters on the luminescence properties and structure evolution of CsPb2Br5 phase in cesium lead bromide perovskite films Enhanced Publication

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