Inverted phosphorescent organic light-emitting diodes utilizing Mg as electron-injection layer Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于镁电子注入层的倒置磷光有机发光二极管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Inverted phosphorescent organic light-emitting diodes utilizing Mg as electron-injection layer" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "李", "givenname": "轩", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Xuan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "李轩（1997-），女，湖南长沙人，硕士研究生，2019年于湖南师范大学树达学院获得学士学位，主要从事有机光电子器件方面的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153815&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153817&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153816&type=", "width": "20.12599945", "height": "26.29999542", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "李轩" }, { "name": "text", "data": "（1997-），女，湖南长沙人，硕士研究生，2019年于湖南师范大学树达学院获得学士学位，主要从事有机光电子器件方面的研究。" } ] ] } ], "deceased": false }, { "name": [ { "lang": "zh", "surname": "郑", "givenname": "浩臣", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHENG", "givenname": "Hao-cheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "吕", "givenname": "文理", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LV", "givenname": "Wen-li", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： lvwl@cjlu.edu.cn", "data": [ { "name": "text", "data": "E-mail： lvwl@cjlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "吕文理（1988-），男，甘肃会宁人，博士研究生，2016年于兰州大学获得博士学位，主要从事有机光电子器件方面的研究。 E-mail： lvwl@cjlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153818&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153820&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153819&type=", "width": "18.43078613", "height": "26.16967773", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "吕文理" }, { "name": "text", "data": "（1988-），男，甘肃会宁人，博士研究生，2016年于兰州大学获得博士学位，主要从事有机光电子器件方面的研究。 E-mail： " }, { "name": "text", "data": "lvwl@cjlu.edu.cn" } ] ] } ], "email": "lvwl@cjlu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "徐", "givenname": "苏楠", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Su-nan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "孙", "givenname": "磊", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SUN", "givenname": "Lei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "彭", "givenname": "应全", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "PENG", "givenname": "Ying-quan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "中国计量大学 光学与电子科技学院，浙江 杭州　310008", "data": [ { "name": "text", "data": "中国计量大学 光学与电子科技学院，浙江 杭州　310008" } ] }, { "lang": "en", "text": "School of Optical and Electronic Technology， China Jiliang University， Hangzhou 310008， China", "data": [ { "name": "text", "data": "School of Optical and Electronic Technology， China Jiliang University， Hangzhou 310008， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "倒置有机发光二极管（inverted organic light-emitting diodes，IOLEDs）因其结构容易与n型薄膜晶体管技术集成而被广泛研究。在IOLEDs研究中，为了使电子能从底阴极有效注入电子传输层，各式各样的电子注入层结构被研究。本文制备并研究了采用超薄金属Mg作为电子注入层的高效率绿色磷光IOLEDs。研究发现超薄金属Mg薄膜具有优良的透光性；基于2 nm厚Mg电子注入层的IOLEDs具有最优的发光性能，其启亮电压、最大电流效率和外量子效率分别为3.06 V、46.5 cd/A和13.3%。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Inverted organic light-emitting diodes （IOLEDs） consists of a bottom cathode followed by the formation of an electron injection layer （EIL）， an electron transport layer （ETL）， a light emission layer （EML）， a hole transport layer （HTL） and an anode， which have been widely studied to match the existing n-type thin film transistor technology. In IOLEDs studies， various EIL structures were studied to improve the efficiency of electron injection from the bottom cathode to ETL. In this paper， we report on high efficiency green phosphorescent IOLEDs utilizing ultra-thin Mg as EIL. The ultra-thin Mg films deposited on quartz substrates exhibited excellent light transmittance. IOLEDs based on the 2 nm Mg as EIL demonstrated the optimal device performance， with the maximum current efficiency， the maximum external quantum efficiency and turn-on voltage of 46.5 cd/A， 13.3% and" }, { "name": "sup", "data": [ { "name": "text", "data": " " } ] }, { "name": "text", "data": "3.06 V， respectively." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "有机发光二极管" } ], [ { "name": "text", "data": "倒置" } ], [ { "name": "text", "data": "超薄镁" } ], [ { "name": "text", "data": "电子注入层" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "Organic light-emitting diodes" } ], [ { "name": "text", "data": "Inverted" } ], [ { "name": "text", "data": "Ultra-thin Mg" } ], [ { "name": "text", "data": "Electron injection layer" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "倒置有机发光二极管（inverted organic light-emitting diodes，IOLEDs）由底部阴极、电子注入层（EIL）、电子传输层（ETL）、发光层（EML）、空穴传输层（HTL）和阳极等功能层组成，因该结构容易与n型薄膜晶体管技术集成、容易实现全透明或顶发光OLEDs而被广泛研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5" ], "text": "1-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，在IOLEDs中，由于电子注入层最先被沉积在底部阴极上，含有活泼碱金属的电子注入层远离顶电极，不易被氧化，从而使得器件的寿命提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在底发光IOLEDs中，透明导电氧化物ITO因其良好的光学和电学性质通常被作为器件的阴极。由于ITO的功函数较高，与ETL的最低未占据分子轨道（LUMO）能级相差较大，较大的电子注入势垒使得电子无法有效从阴极注入ETL。为了解决这个问题，通常会在ITO与ETL之间插入电子注入层（EIL）来降低电子注入势垒，改善电子的注入效率。为此，多种复杂的电子注入层结构被研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，诸如： Tris（8-hydroxyquinoline）aluminum（Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）/Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ":Li" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "N、HAT-CN/Al/Bphen:Li、ZnO、MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、ZnO/tris-[3-3-pyridyl） mesityl] borane（3TPYMB）、ZnO/Bathophenanthroline 4,7-Diphenyl-1,10-phenanthroline （Bphen）:Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、1,4,5,8,9,11-Hexa-azatripheny-lenehexacarbonitrile（HAT-CN）/Al/LiF和Al纳米颗粒" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R8", "R9", "R10", "R11", "R12", "R13", "R14", "R15", "R16" ], "text": "8-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。但复杂的多层电子注入层结构，特别是旋涂和碱金属掺杂等制备工艺，大大增加了IOLEDs的制备工艺难度和成本。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "利用简单的低功函数金属薄膜作为电子注入层是降低IOLEDs制备工艺难度和成本的有效途径。相对于金属Al和Ag" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，金属Mg具有更低的功函数，在早期荧光IOLEDs研究中也被作为电子注入层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，2002年T. Dobbertin等人报道了顶发射的荧光IOLEDs采用Au（100 nm）/Mg（100 nm）双层结构作为器件的底电极和电子注入层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2006年，Ta-Ya Chu等人将超薄Mg薄膜插入到ITO底电极与Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "电子传输层之间，实现电流效率~4.66 cd/A的荧光IOLEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，他们采用Mg/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O:Bphen作为电子注入层，实现了电流效率~13.0 cd/A的白光IOLEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，在后来磷光IOLEDs研究中，采用Mg作为电子注入层的研究并不多见。在本研究中，我们采用超薄金属Mg作为电子注入层，将其插入到磷光IOLEDs的底电极与电子传输层之间，实现了高效率的绿色磷光IOLEDs。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备了结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "a所示的IOLEDs，其中采用图案化刻蚀的条状ITO作为底电极，采用超薄金属Mg薄膜作为电子注入层，Bis[2-(2-hydroxyphenyl)-pyridine beryllium （BePP2）作为电子传输层，质量比~8%的Tris(2-phenylpyridine)iridium(III)（Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）掺杂在4,4′-bis(carbazol-9-yl)biphenyl （CBP）中作为发光层，1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane （TAPC）作为空穴传输层，HAT-CN作为电荷产生层（CGL），Al作为顶电极。所有有机半导体材料均采购于吉林奥来德光电材料股份有限公司，在使用之前均未经过二次提纯。在器件制备之前，ITO玻璃衬底分别在丙酮、乙醇、去离子水超声清洗10分钟，用氮气吹干并在真空干燥箱（60℃）中烘烤30分钟。金属Mg颗粒在浓度为2%的稀盐酸中浸泡1分钟以去除表面的氧化层。器件衬底和材料全部装入真空镀膜机，当真空度达到2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "Pa时开始薄膜的蒸镀。其中Mg EIL和Al电极分别采用金属钨舟和钨丝作为加热源蒸镀，有机薄膜采用石英坩埚加热源蒸镀，薄膜的厚度通过石英晶振膜厚监测仪实时监测。为了精确控制Mg电子注入层的厚度，通过调节蒸发舟的功率，使Mg保持在较低的蒸发速率（0.5-1 nm/min）下沉积。器件的ITO底电极与Al顶电极为2 mm宽的互相垂直的条状，重叠部分为器件的有效发光区域，面积为0.04 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。顶电极蒸镀完成之后，器件被转移至充满氩气的手套箱（水、氧含量小于0.1 ppm），采用玻璃盖板和紫外固化胶对器件进行封装。" } ] }, { "name": "figgroup", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "基于Mg电子注入层IOLEDs的（a）器件结构示意图和（b）能级示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic （a） structure and （b） energy level diagram of IOLEDs based on Mg electron injection layer." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F1a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153821&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153823&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153822&type=", "width": "49.98899841", "height": "37.57099915", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F1a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153824&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153826&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153825&type=", "width": "59.99000168", "height": "45.91400146", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153828&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153827&type=", "width": "60.09000397", "height": "90.88700104", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "在本研究中，我们制备了基于Al（2 nm）/LiF（1 nm）、Al（2 nm）/LiF（1 nm）/Al（1 nm）和Mg电子注入层的IOLEDs，同时制备了不具有电子注入层的IOLEDs作为参考器件。此外，为了优化Mg电子注入层的厚度，我们制备了Mg电子注入层厚度分别为0.5、1、2和3 nm的IOLEDs器件。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　样品表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "IOLEDs器件的性能表征采用OLED-200光色电综合性能分析系统（杭州远方光电信息股份有限公司），该系统配备了Keithley 2400源表作为器件测试的电压源表，可直接测试OLEDs的电流密度-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "）特性、亮度-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": "）特性曲线，并获得OLEDs的电流效率（" }, { "name": "italic", "data": [ { "name": "text", "data": "CE" } ] }, { "name": "text", "data": "）、外量子效率（" }, { "name": "italic", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "）和电致发光（EL）光谱。为了表征Mg薄膜的光学特性和表面形貌，在石英玻璃和硅衬底上分别蒸镀了不同厚度的 Mg薄膜，测量了其透射光谱和扫描电子显微镜（SEM）图像。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "在底发光的IOLEDs中，超薄的Ag或Al等金属薄膜通常被沉积在ITO底电极上作为电子注入层，金属电子注入层对器件透射率的影响是首先需要被考虑的。由于金属薄膜厚度严重影响着其透射率，为了提高透射率，这些金属电子注入层的厚度一般都很薄（0.5~2 nm）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。不同与Al和Ag的热蒸发沉积，Mg在高真空下的热蒸发是由固体直接升华，在加热中没有观测到金属Mg的熔化现象。不同厚度Mg薄膜在石英衬底上的透射光谱如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。由图可见，石英衬底在可见光范围（380-780 nm）平均透射率为94.8%。当1、2和3 nm Mg薄膜分别沉积在石英衬底上，其在可见光范围的平均透射率分别为93.6%、93.1%和92.7%，相对于石英衬底分别降低了1.21%、1.84%和2.21%。由此可见超薄金属Mg薄膜具有极好的透光性，保证了IOLEDs的发光能有效透射出器件。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "石英衬底与石英/Mg薄膜的透射光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Transmission spectra of quartz substrate and quartz/Mg films." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153829&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153831&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153830&type=", "width": "69.99099731", "height": "48.73600006", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了对比金属Mg作为EIL对IOLEDs电子注入效率的影响，同时制备了基于Al（2 nm）/LiF（1 nm）、Al（2 nm）/LiF（1 nm）/Al（1 nm）EIL和无EIL的IOLEDs器件，四种器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "CE-V" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "EQE-V" } ] }, { "name": "text", "data": "特性曲线如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。由" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "a可见，在相同驱动电压（12 V）下，基于Al/LiF、Al/LiF/Al 和 Mg EIL IOLEDs的电流密度分别是无EIL 器件的2.01、3.62和11.7倍。表明引入Mg电子注入层有效地改善电子的注入效率。如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "b所示的IOLEDs能级示意图，ITO的功函数为-4.7 eV，BePP2电子传输层的LUMO能级为-2.6 eV，在无EIL IOLEDs中，电子从ITO阴极向BePP2电子传输层注入需要克服很大的注入势垒~2.1 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。相对于金属Al，Mg具有更低的功函数-3.66 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，当Mg EIL插入到ITO阴极与BePP2电子传输层之间，电子的注入势垒可被降低至0.9 eV。Mg EIL引入起到了电子注入势垒调控的作用，电子的注入可用典型Richardson-Schottky热注入模型描述" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "figgroup", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "基于Mg、Al/LiF和Al/LiF/Al EIL IOLEDs与无EIL器件的特性曲线：（a）" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "；（b）" }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": "；（c）" }, { "name": "italic", "data": [ { "name": "text", "data": "CE-V" } ] }, { "name": "text", "data": "；（d）" }, { "name": "italic", "data": [ { "name": "text", "data": "EQE-V" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Characteristic curves of Mg， Al/LiF and Al/LiF/Al EIL IOLEDs and w/o EIL device： （a） " }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "； （b） " }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": "； （c） " }, { "name": "italic", "data": [ { "name": "text", "data": "CE-V" } ] }, { "name": "text", "data": "； （d） " }, { "name": "italic", "data": [ { "name": "text", "data": "EQE-V" } ] }, { "name": "text", "data": "." } ] } ], "note": [], "layout": "1,2,3,4;", "grid": [ [ { "name": "fig", "data": { "id": "F3a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": 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"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153838&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153840&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153839&type=", "width": "37.82499313", "height": "26.34304047", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F3a4", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153841&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153843&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153842&type=", "width": "37.82499313", "height": "26.34304047", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153845&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153844&type=", "width": "162.79995728", "height": "30.04404068", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "b展示了IOLEDs的" }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": "特性曲线。可见引入Al/LiF、Al/LiF/Al和Mg EIL后，IOLEDs的启亮电压从7.5 V分别降低到6.5、4.72和3.06 V；在相同电压12 V下，无 EIL IOLEDs的亮度仅有104.7 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，而引入Al/LiF、Al/LiF/Al和Mg EIL之后，亮度分别增大到2369.1、4946.3和35157 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。表明引入EIL之后，从阴极注入的大量电子与从阳极注入的空穴在发光层有效复合并发光；而无EIL器件由于从阴极无法有效注入电子，使得器件发光较弱。图" }, { "name": "xref", "data": { "text": "3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "c和" }, { "name": "xref", "data": { "text": "3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "d展示了IOLEDs的电流效率和外量子效率随电压变化的曲线。可见，Mg EIL IOLEDs的发光效率最高，" }, { "name": "italic", "data": [ { "name": "text", "data": "CE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] } ] }, { "name": "text", "data": "分别达到46.5 cd/A和13.3%，分别是无EIL器件的48和43倍。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "展示了IOLEDs归一化的EL光谱，峰值波长如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。可见四种IOLEDs的EL光谱只存在微小的差异，说明激子复合主要集中在CBP:Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发光层内。EL光谱间微小的差异可能来源于器件内微弱的微腔效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "基于Mg、Al/LiF和Al/LiF/Al EIL IOLEDs与无EIL器件的EL光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "EL spectra of Mg， Al/LiF and Al/LiF/Al EIL IOLEDs and w/o EIL device." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153846&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153848&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153847&type=", "width": "69.99099731", "height": "48.73600006", "fontsize": "" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "IOLEDs的发光特性参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Luminescence characteristic parameters of the IOLEDs" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "2", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "器件结构" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "启亮电压" }, { "name": "sup", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": " （V）" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" }, { "name": "sup", "data": [ { "name": "text", "data": "b" } ] } ] } ] }, { "name": "p", "data": [ { "name": "text", "data": "（cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] } ] } ] }, { "name": "p", "data": [ { "name": "text", "data": "（%）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "CE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] } ] } ] }, { "name": "p", "data": [ { "name": 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{ "name": "text", "data": "为了进一步研究Mg EIL厚度对IOLEDs性能的影响，我们制备了Mg电子注入层厚度分别为0.5、 1、2和3 nm的IOLEDs器件，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-L-V" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "EQE-V" } ] }, { "name": "text", "data": "特性曲线如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "列出了各个器件的性能参数。由图可见，当Mg EIL厚度小于2 nm时，器件电流密度、亮度和发光效率都随Mg厚度的增加而增大。而当Mg的厚度增大到3 nm时，器件的发光亮度和效率有所降低，而电流密度与2 nm Mg EIL器件相当。为了探究Mg EIL厚度对器件性能影响的原因，使用场发射扫描电子显微镜表征了Mg薄膜的表面形貌，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。由图可见，2 nm厚的Mg可以有效覆盖硅衬底表面，只有少量岛状薄膜形成，而当Mg的厚度增大到3 nm及以上，岛状Mg薄膜明显增多。基于此我们推测，厚度小于2 nm的Mg薄膜无法有效覆盖ITO表面，只能注入有限的电子，使得Mg EIL IOLEDs展示出较差的发光性能；而当Mg 薄膜的厚度增大到3 nm，由于Mg薄膜透射率降低以及岛状Mg薄膜的散射，使得器件发光亮度和效率逐步降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同厚度Mg EIL 的IOLEDs特性曲线：（a）" }, { "name": "italic", "data": [ { "name": "text", "data": "J-L-V" } ] }, { "name": "text", "data": "；（b）" }, { "name": "italic", "data": [ { "name": "text", "data": "EQE-V" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Characteristic curves of IOLEDs with different thicknesses of Mg EIL： （a） " }, { "name": "italic", "data": [ { "name": "text", "data": "J-L-V" } ] }, { "name": "text", "data": "； （b） " }, { "name": "italic", "data": [ { "name": "text", "data": "EQE-V." } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153851&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153853&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153852&type=", "width": "142.57604980", "height": "48.77902222", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "沉积在硅衬底上不同厚度Mg的SEM图像：（a）Si衬底；（b） 2 nm Mg；（c） 3 nm Mg；（d） 5 nm Mg。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "SEM images of different thicknesses of Mg films on Si substrates： （a）Si； （b）2 nm Mg； （c） 3 nm Mg； （d） 5 nm Mg." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153854&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153856&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153855&type=", "width": "77.69583130", "height": "54.63679123", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "列举了近年来基于Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为磷光掺杂剂IOLEDs的电子注入层结构及其发光性能参数。可见，文献中报道的基于Ir(ppy)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的IOLEDs大多采用碱金属掺杂的EIL结构。本文制备的Mg EIL IOLEDs发光效率略低的主要原因在于依然存在较高的电子注入势垒（~0.9 eV）。在后续研究中，可通过采用Mg EIL与碱金属掺杂相结合的结构来进一步提升IOLEDs的发光效率。" } ] 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"name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153858&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153857&type=", "width": "77.69583893", "height": "52.27462769", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "sup", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": " 器件发光亮度达到1 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对应的电压；" } ] }, { "name": "p", "data": [ { "name": "sup", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": " 驱动电压为12 V对应的发光亮度。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备并研究了基于超薄Mg 电子注入层的IOLEDs，研究结果表明超薄金属Mg薄膜具有良好的透射率，且作为电子注入层可有效改善IOLEDs的电子注入效率。基于2 nm Mg EIL的IOLEDs展示出最优的发光性能，其启亮电压、最大电流效率和最大外量子效率分别为3.06 V、46.5 cd/A和13.3%。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Chu T" }, { "name": "text", "data": "." }, { "name": "text", "data": "-Y.， S.-Y. 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