无数据
1.State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
2.Research Institute of Chongqing, Changchun University of Science and Technology, Chongqing 401135, China
Published:05 April 2023,
Received:23 October 2022,
Revised:08 November 2022,
Scan for full text
Cite this article
王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题[J].发光学报,2023,44(04):627-633.
WANG Quhui,WANG Haizhu,WANG Jiao,et al.Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2023,44(04):627-633.
王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题[J].发光学报,2023,44(04):627-633. DOI: 10.37188/CJL.20220375.
WANG Quhui,WANG Haizhu,WANG Jiao,et al.Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2023,44(04):627-633. DOI: 10.37188/CJL.20220375.
0
Views
16
Downloads
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution