Study on the Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高应变InGaAs/GaAs多量子阱中的局域态问题研究" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Study on the Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "王", "givenname": "曲惠", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Qu-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "王曲惠（1994-），女，吉林四平人 ，博士研究生，2016年于长春理工大学获得学士学位，主要从事半导体外延生长的研究。E-mail： 936356566@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153694&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153696&type=", "big": 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"rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "马", "givenname": "晓辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MA", "givenname": "Xiao-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： mxh@cust.edu.cn", "data": [ { "name": "text", "data": "E-mail： mxh@cust.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "马晓辉（1965－），男，吉林长春人 ，博士，研究员，博士生导师，2008年于长春理工大学获得博士学位 ，主要从事光电子器件，光电子技术及应用的研究。E-mail： mxh@cust.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153697&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153699&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153698&type=", "width": "18.23551941", "height": "25.64132690", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "马晓辉" }, { "name": "text", "data": "（1965－），男，吉林长春人 ，博士，研究员，博士生导师，2008年于长春理工大学获得博士学位 ，主要从事光电子器件，光电子技术及应用的研究。E-mail： " }, { "name": "text", "data": "mxh@cust.edu.cn" } ] ] } ], "email": "mxh@cust.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "长春理工大学 高功率半导体国家重点实验室，吉林 长春 130022", "data": [ { "name": "text", "data": "长春理工大学 高功率半导体国家重点实验室，吉林 长春 130022" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，China", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "长春理工大学 重庆研究院，重庆 401135", "data": [ { "name": "text", "data": "长春理工大学 重庆研究院，重庆 401135" } ] }, { "lang": "en", "label": "2", "text": "Research Institute of Chongqing，Changchun University of Science and Technology，Chongqing 401135，China", "data": [ { "name": "text", "data": "Research Institute of Chongqing，Changchun University of Science and Technology，Chongqing 401135，China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "本文针对高应变InGaAs/GaAs多量子阱中存在的局域态问题，利用金属有机化合物气相外延（MOCVD）技术，设计并生长了五周期的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.7" } ] }, { "name": "text", "data": "As/GaAs高应变多量子阱材料。通过原子力显微镜（Atomic Force Microscope， AFM）和变温光致发光（Photoluminescence， PL）测试，发现量子阱内部存在缺陷及组分波动的材料无序性表现，验证了多量子阱内部局域态的存在及起源。同时发现在不同测试位置，局域态在低温下对光谱的影响也不同，分别表现为双峰分布和峰位“S”型变化。这进一步说明材料内部无序化程度不同，导致局域态的深度也不同。依据温度-带隙关系的拟合，提出了包含局域态的多量子阱材料的电势分布，并揭示了局域态载流子和自由载流子的复合机制。并借助变功率PL测试，研究了在不同激发功率密度下不同深度的局域态的发光特性。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In order to study the localized states in high-strain InGaAs/GaAs multiple quantum wells （MQWs）， a five-period In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.7" } ] }, { "name": "text", "data": "As/GaAs MQWs structure was designed and grown by metal-organic chemical vapor deposition （MOCVD） technique in this paper. By means of AFM and temperature-dependent PL， the material disorder in MQWs such as defects and component fluctuation were found， the existence and origin of localized states in MQWs were verified. The influence of the localized states on the spectra at low temperature was different for different measurement positions， exhibiting a bimodal distribution and an \"S\"-shaped change in peak position， respectively. This further indicated that different disorder within the material lead to different depths of localized states. Based on the fitting of the temperature-bandgap relationship， the potential distribution of the MQWs structure containing localized states was proposed， and the recombination mechanism of the localized state carriers and free carriers was revealed. The optical properties of localized states at different depths under different excitation power densities are studied with the help of excitation power-dependent PL measurement." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "InGaAs/GaAs多量子阱" } ], [ { "name": "text", "data": "局域态" } ], [ { "name": "text", "data": "高应变" } ], [ { "name": "text", "data": "MOCVD" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "InGaAs/GaAs MQWs" } ], [ { "name": "text", "data": "localized states" } ], [ { "name": "text", "data": "high strain" } ], [ { "name": "text", "data": "MOCVD" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器具有体积小、重量轻、价格便宜、寿命长、可靠性高、易于集成等优点，适用于工业加工、国防军事、医疗、通讯等领域，现已成为光电子领域的核心器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。高应变InGaAs/GaAs多量子阱结构在光电器件中具有广泛的应用，尤其是作为半导体激光器的有源区，因为量子限制效应可以降低器件的阈值电流密度、提高温度稳定性和量子效率等性能，所以，针对高质量高应变InGaAs/GaAs多量子阱外延材料的研究，就具有很高实用价值和重要的研究意义" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R3", "R4", "R5", "R6", "R7" ], "text": "3-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在InGaAs/GaAs多量子阱结构中，In含量的高低可以实现对量子阱结构波长的调节。然而In含量越高，InGaAs材料的晶格常数就越大，与GaAs衬底的失配程度也随之加剧。当然，适当的失配带来的应变可以提高InGaAs/GaAs量子阱激光器的性能。InGaAs阱层所承受的双轴压应变和切向张应变会使价带顶部的重空穴带和轻空穴带分裂，从而改变量子阱的能带结构，提高激光器的光学增益、内量子效率、高温特性等，还可以降低器件的阈值电流，使调制带宽变大，线宽变小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而高失配应变的存在则会给量子阱材料外延生长过程中带来许多难题，如原子聚集，组分波动，厚度不均，界面粗糙等等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一旦InGaAs的外延厚度超出临界厚度，InGaAs层再也无法以赝晶生长的模式承受巨大的失配应变，材料内部便会产生失配位错等缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些材料内部的无序表现会在量子阱结构中引起局部电势波动，产生一个波动的能量位置，即局域态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当载流子经过时，很有可能被捕获，其运动范围则被限制在局域态中，这些载流子被称为局域化载流子。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "研究人员针对不同材料体系量子阱的局域态问题开展了一些研究工作，其研究发现Sb原子由于原子粒径较大而引起含量分布不均匀，所以在GaAsSb/GaAs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ", GaAsSb/AlGaAs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "量子阱中极易出现局域态。InGaN的生长过程中发生相分离，也会造成材料内元素含量的波动，在InGaN/GaN和GaInNAs/GaAs量子阱中引入局域态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R16", "R17", "R18", "R19" ], "text": "16-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些结果表明量子阱结构中的合金问题，如组分波动，厚度不均等，都会导致局域态的出现。而且在低温下载流子的动量小，陷入局域态后难以摆脱束缚。随着温度和激发功率的变化，局域态对发光谱的影响也会发生变化。因此，变温和变功率PL测试往往被用来研究局域态的性质。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在这些报道中，含有Sb或N元素的量子阱中的局域态通常位于低于带边几十毫电子伏特的带尾，对于高应变InGaAs/GaAs量子阱而言，其局域态深度往往只有几个毫电子伏特" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，所以在低温光谱中变化相对较小，不易被发现。 但是载流子局域化现象的存在必然会影响半导体材料中的复合机制，况且GaAs基半导体激光器在长波长器件中仍然具备InP基材料无法超越的技术优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，研究高In组分的高应变InGaAs/GaAs多量子阱中的局域态仍然是优化高应变InGaAs/GaAs多量子阱激光器性能的必要课题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文针对这一问题，利用MOCVD技术生长了高应变InGaAs/GaAs多量子阱材料，通过AFM、变温PL和变功率PL测试，验证局域态的存在及发光特性，推演载流子在不同温度和激发功率下的复合行为，并探究其对高应变InGaAs/GaAs多量子阱的影响。本文对研究含有局域态的高应变InGaAs/GaAs多量子阱材料的发光性能及辐射复合机制具有重要意义。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "实验采用德国Aixtron公司200/4型MOCVD设备进行高应变InGaAs/GaAs多量子阱的外延生长制备。以三甲基镓（TMGa）和三甲基铟（TMIn）作为Ⅲ族源，砷烷（AsH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）作为Ⅴ族源，高纯氢气（H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）作为Ⅲ族源的载气。生长时反应腔室压力维持在100 mbar，且在富Ⅴ族气体的氛围下进行。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "给出了生长的高应变InGaAs/GaAs多量子阱结构示意图，InGaAs/GaAs多量子阱结构被生长在N型无偏角的GaAs衬底和缓冲层上。在生长前，对衬底在660℃的温度下进行5分钟的退火处理，以去除表面氧化物。之后将温度降低至600℃生长500nm厚的GaAs缓冲层，并维持600℃生长5个周期的量子阱结构。其中，每个量子阱结构包括10 nm厚的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.7" } ] }, { "name": "text", "data": "As量子阱层和20 nm厚的GaAs势垒层，两者的生长速率分别为0.54和0.81 μm/h。最后生长50 nm厚的GaAs盖层以保护量子阱。生长结束后在AsH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "气体的保护下，将反应室的温度降至室温，以便后续测试表征。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "InGaAs/GaAs多量子阱结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Schematic structure of InGaAs/GaAs MQWs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153700&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153702&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153701&type=", "width": "41.87500000", "height": "52.86399841", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "本文生长获得的量子阱材料的表面形貌由原子力显微镜（AFM，Bruker ULTIMODE8）在室温下获取，测试时针尖模式为接触模式。变温及变功率PL由HORIBA iHR550光谱仪完成，选用InGaAs探测器，激发光源为波长为655 nm连续输出的半导体激光器，光斑直径为0.4 cm。样品放置在液氦制冷台上，用带有CaF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "窗口镜片的真空罩保护。变温PL测试的温度调节范围为15–250 K，功率密度维持在300 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，变功率PL测试的功率密度调节范围为5 - 100 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，温度维持在15 K。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　AFM结果与分析" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "给出了InGaAs/GaAs多量子阱材料表面形貌的测试结果，发现在随机选取了两个测试位置（针尖扫描范围为10×10μm），都出现了同样的表面形貌，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）和（b）所示。从图中可以看到，两个位置的表面都出现了明显的凸起条纹，在两图中左下角用白色实线粗箭头标注。这表明所生长的量子阱材料内部出现了缺陷，这种缺陷很有可能是量子阱材料为了释放大失配带来的高应变而产生的失配位错所致。此外，从两个测试位置呈现的表面形貌可以推测，除去凸起的条纹，整个表面都存在很多二维岛屿和凹坑交错分布。且参照尺寸颜色条可以看出，凹坑的深度较深，样品表面凹凸不平。为了进一步反映材料的表面形貌，我们对" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）进行了三维显示模式处理，结果如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（e）所示。从三维显示图中可以看出，样品表面平整度确实很差，凸起处为二维岛屿相互堆叠形成的局部多层岛屿簇，凹陷处紧邻其畔。在" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（e）中选取同时存在岛屿簇和凹陷处的位置并放大，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（f）所示，可以很清楚的看到堆叠岛屿簇构成了“多层蛋糕”的形状，从生长方向看二维岛屿的面积越来越小。而且伴随堆叠岛屿形成的是由这些岛屿边缘围成的凹陷“洞穴”。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同测试位置的AFM图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "AFM results of different measurement positions." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153703&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153705&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153704&type=", "width": "77.69583130", "height": "71.98844147", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用Nano Analysis软件，分别在两个测量位置画线获取表面高度数据，画线位置及方向在" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）和（b）中以白色虚线箭头标识，对应的高度数据分别呈现在" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）和（d）。在图（c）中可以很清晰的分辨出（a）中画线起始位置为凹坑，经过若干层二维岛屿，达到此岛屿簇的最高点。之后高度沿着岛屿簇逐渐下降，到达第二个凹坑，高度差为1.75 nm。图（b）中的画线除了岛屿簇与凹坑外，还经过了凸起条纹，这些在图（d）中均有依次呈现，凹坑与相邻的岛屿簇的高度差为1.36 nm，与另一侧的凸起条纹高度差为1.19 nm。通过软件，还可以得到两个测量位置的表面粗糙度Rq，分别为0.349 nm和0.365 nm。可见样品表面存在大高度差的凹凸处，正是造成表面粗糙的原因。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "这种形貌表明，此量子阱材料的生长模式并不是理想的台阶流生长模式，样品表面的台阶簇和凹陷更像是原子受局部应变影响下的层状生长模式。有研究报道InGaAs/GaAs量子阱材料的生长中，InGaAs层对In原子的容纳率是存在上限的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当生长高应变InGaAs/GaAs多量子阱时，需要提供大量TMIn源，材料体系为了降低失配应变从而降低总化学势，会抑制In原子的并入，所以整个InGaAs层内部会存在In组分分布不均匀的情况。如果In供应过量，大量的In吸附原子滞留在表面，最终形成In原子聚集的三维结构（In-cluster）。组分不均匀即内部应力分布不均匀，In组分高处，即晶格偏大处，而In组分低处的晶格常数更接近GaAs。当生长达到最上层的GaAs层时，底下的多量子阱结构已经形成了应力不均匀的表面，Ga原子则会选择在低In组分处成核，而避开会承受更大的应力的高In组分处，以层状生长的模式，形成二维岛屿。随着沉积的继续进行，当二维岛屿的边缘触及到高In组分的区域，Ga原子为了降低应变能会牺牲表面能，在二维岛屿上成核，最终形成了叠层二维岛屿簇，而高In组分处最终成为了凹坑。通过以上分析可以知道，材料内部存在着组分波动和缺陷，很有可能引入局域态，然而AFM只能获取材料的表面形貌信息，下面将通过PL测试对材料的发光性质进行详细探究。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　变温PL结果与分析" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "对InGaAs/GaAs多量子阱材料进行变温PL测试，随机选取多个位置，得到的PL光谱表现出完全不同的特性，可以归纳为如下两种情况，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "位置A和B的光谱所示。位置A获得的光谱在低温范围内包含低能量的肩峰，说明此时材料内部含有两种辐射复合机制。对其每个温度下的光谱进行分峰高斯拟合，发现在15 - 80 K温度范围内是双峰，高能量的峰峰强更强，一直占据主峰位置，低能端的肩峰的峰强则随着温度的升高逐渐减弱，最终淬灭，峰位随温度的升高发生红移；在90 K及以上的测试温度下光谱是单峰模式，峰位随着温度的升高一直在红移。位置B的光谱图在所有温度下都是单峰，但是其峰位在15–30 K时随着温度的升高而红移；在30–70 K的温度区间，峰位随温度的升高发生蓝移；在70 –250 K，峰位随温度的升高再次红移。可以看出，位置B的峰位整体随温度的升高呈现“S”型变化。位置A光谱中低能量肩峰的存在又消失现象，以及位置B光谱中峰位的“S”型变化现象，均符合材料中局域态发光（Localized states emission，LE）的特征。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "位置A和B的变温PL测试图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Temperature-dependent PL results of position A and B." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153706&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153708&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153707&type=", "width": "77.69583130", "height": "79.25859070", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "统计了两个位置在不同温度下的发光峰峰位数据，用彩色图形标识。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中的黑色实线为通过O'Donnell and Chen优化的Varshni公式拟合而成的曲线，此公式常用来分析半导体材料的带边发光规律" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153710&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153709&type=", "width": "68.41066742", "height": "8.46666718", "fontsize": "" } } }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，T是温度， E" }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "(0)是温度为0 K时半导体材料的带隙，S是无量纲耦合常数," }, { "name": "text", "data": "<" }, { "name": "text", "data": "ħω" }, { "name": "text", "data": ">" }, { "name": "text", "data": "是半导体材料中声子的平均能量。通常来说，半导体的带隙随着温度的升高是变小的，从位置A的拟合结果看，高能量峰与温度的关系与公式拟合的很好，说明此峰为自由载流子（Free carrier emission，FE）在多量子阱材料的导带-价带的带边发光。低能量峰则为局域态发光，其与高能量峰的能量差为此温度下的局域能，因此，在15 K时，位置A的局域态深度为5.92 meV。位置B的光谱由于“S”型变化，在低温区域与拟合曲线稍有不符，15 K时拟合得到的带隙与实验测得的发光峰峰位之差即为此温度下位置B的局域态深度，为8.90 meV。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "位置A和B的温度-带隙关系及拟合图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Temperature-dependent peak position and fitting curve of position A and B." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153711&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153713&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153712&type=", "width": "77.69583130", "height": "62.82819748", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "可见两位置的局域态深度不同，发光谱随温度变化的规律也不同，说明在InGaAs/GaAs多量子阱材料内部引起这两处局域态的原因是不同的。正如3.1中对AFM测得的表面形貌进行分析得到的结论所述，InGaAs/GaAs多量子阱材料内部不仅存在缺陷，还存在着In和Ga组分波动的情况。这些材料内部的无序性出现的位置随机，程度各异，在材料的能带引起的电势波动范围也不同，所以同一InGaAs/GaAs多量子阱结构中的局域态的深度有深有浅。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "根据以上对变温PL数据及拟合结果的分析，" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "给出了InGaAs/GaAs多量子阱材料的电势分布情况，（a）-（c）为位置A，（d）-（g）为位置B。通过上面的计算得知，位置A的局域态深度比位置B浅，即位置A的局域态对载流子的限制作用比位置B弱，能捕获的载流子数目相对较少，所以在低温下，部分载流子被局域态陷阱捕获，没有足够的能力逃离，剩余部分载流子在带边发生复合，所以低温时位置A的光谱同时出现了局域态载流子与自由载流子的发光峰，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）所示。当温度升高时，一些弱局域态中的载流子发生了热逃逸，又被其他强局域态重新捕获，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）所示，这种载流子再分布的行为使低能峰随温度的升高发生红移。随着温度的进一步升高，局域态中的载流子获得了足够高的能量，发生离域效应，全部转变为自由载流子，低能峰猝灭，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）所示。对于位置B来说，在15 K的最低温度下，载流子随机分布在势能极小处，如图（d）所示。当温度稍有升高时，弱局域态的载流子被热激活，随后通过跳跃弛豫到更强的局域态中，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（e）所示，强局域态的深度更深，这是位置B峰位第一次红移的原因。当温度继续升高时，高温使载流子能够实现与晶格的热平衡，并占据局域态的更高能级，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（f）所示，因此，局域态发光峰发生了蓝移。当温度足够高时，载流子可以摆脱局域态的限制，完全解局域，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（g）所示，位置B光谱中的发光峰为自由载流子的带边复合所致，其峰位随着温度的升高而红移。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "位置A和B的电势分布及载流子复合图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "Schematic diagram of potential distribution and carrier recombination of position A and B." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153714&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153716&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153715&type=", "width": "67.88430786", "height": "57.25027466", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　变功率PL结果与分析" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究InGaAs/GaAs多量子阱材料中局域态的发光特性，在15 K的低温下对两个位置进行变功率PL测试，测试结果如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。位置A的光谱在所有测试功率密度下都呈现双峰分布，并且随着功率密度的增加，两个峰的强度均增强，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）所示。当功率密度较低时，光生载流子较少，又由于此处局域能小，部分载流子被局域态捕获，剩余的部分载流子可以在带边复合，所以LE与FE峰强相当。当功率密度增加，载流子的数量随之增加，由于局域态较浅，能容纳的载流子有限，所以多数载流子作为自由载流子在带边进行辐射复合。因此，FE峰强度迅速增加，并逐渐主导光谱。根据变温PL可知，位置B在15 K时是局域态载流子的复合，因此" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（b）中为局域态在不同功率密度下的发光特性。随着功率的增加，峰位发生轻微蓝移。这可能是局域态的能带填充效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当激发功率较低时，载流子倾向于首先填充局域态较低的能级。随着激发功率密度的增加，低能级达到饱和，载流子将填充到更高的能级。因此，可以观察到LE的蓝移。位置A由于局域态较浅，在低激发功率密度下载流子就填满了整个局域态，因此位置A中的LE峰并没有随着功率密度的增加发生蓝移。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "位置A和B的变功率PL测试图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Excitation power-dependent PL results of position A and B." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153717&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153719&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37153718&type=", "width": "65.65197754", "height": "111.98901367", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过MOCVD技术生长了五周期的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.7" } ] }, { "name": "text", "data": "As/GaAs多量子阱材料。首先通过AFM测试不同位置的表面形貌，发现样品表面存在凸起条纹，这表明多量子阱材料存在缺陷，堆叠的二位岛屿簇表面在InGaAs层中存在In组分不均匀。随后变温PL测试不同位置的光学特性，发现位置A的光谱在低温下包含两个峰，低能量峰峰位随温度的升高发生红移，直至低能量峰猝灭，高能量峰一直存在，峰位随着温度的升高持续红移；位置B的光谱只有一个峰，且峰位随温度的升高呈现“S”型变化。利用Varshni公式对不同温度下的峰位进行拟合，经分析得知，多量子阱材料内部存在不同深度的局域态，正是局域态载流子和自由载流子的竞争发光使光谱发生以上变化。而AFM观察到的材料无序性是给多量子阱材料电势造成波动，引入局域态的原因。依据变温PL数据，给出了多量子阱材料的电势分布图，揭示了不同温度下两种载流子的复合机制。最后，通过变功率PL测试探究了位置 A 和 B的局域态的发光特性，以及局域态中的载流子在不同激发功率下的行为。本研究可以加深对高应变InGaAs/GaAs多量子阱材料的辐射复合机制的理解，并且对研究含有局域态的高应变InGaAs/GaAs多量子阱材料发光性能具有重要意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文（补充文件及）专家审稿意见和作者回复内容下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220" } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220" } }, { "name": "text", "data": "***（20220***为文章稿号）." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王立军" }, { "name": "text", "data": "， " }, { "name": "text", "data": "宁永强" }, { "name": "text", "data": "， " }, { "name": "text", "data": "秦莉" }, { "name": "text", "data": "， " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率半导体激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": "." } ], "title": "大功率半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "WANG L J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "NING Y Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "QIN L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ".. " }, { "name": "text", "data": "Development of high power diode laser" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Development of high power diode laser" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "陈良惠" }, { "name": "text", "data": "， " }, { "name": "text", "data": "杨国文" }, { "name": "text", "data": "， " }, { "name": "text", "data": "刘育衔" }, { "name": "text", "data": ". " }, { "name": "text", "data": "半导体激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "0500001-1-19" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3788/cjl202047.0500001" } ], "href": "http://dx.doi.org/10.3788/cjl202047.0500001" } } ], "title": "半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "CHEN L H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YANG G W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIU Y X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ".. " }, { "name": "text", "data": "Development of semiconductor lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lasers" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "0500001-1-19" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3788/cjl202047.0500001" } ], "href": "http://dx.doi.org/10.3788/cjl202047.0500001" } } ], "title": "Development of semiconductor lasers" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "QIAO Z L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LI X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Semicond. Sci. Technol." }, { "name": "text", "data": " ，" }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "34" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "055013" }, { "name": "text", "data": "." } ], "title": "High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KALYUZHNYY N A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "EMELYANOV V M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "EVSTROPOV V V" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optimization of photoelectric parameters of InGaAs metamorphic laser （λ= 1064 nm） power converters with over 50% efficiency" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Sol. Energy Mater. Sol. Cells" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "217" }, { "name": "text", "data": "： " }, { "name": "text", "data": "110710" }, { "name": "text", "data": "." } ], "title": "Optimization of photoelectric parameters of InGaAs metamorphic laser （λ= 1064 nm） power converters with over 50% efficiency" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YANG H M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHENG Y L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TANG Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Phys. D： Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "53" }, { "name": "text", "data": "（" }, { "name": "text", "data": "13" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "135110" }, { "name": "text", "data": "." } ], "title": "MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HSU K C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HO C H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIN Y S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optical and electrical characteristics of GaAs/InGaAs quantum-well device" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2009" }, { "name": "text", "data": "， " }, { "name": "text", "data": "471" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1-2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "567" }, { "name": "text", "data": "-" }, { "name": "text", "data": "569" }, { "name": "text", "data": "." } ], "title": "Optical and electrical characteristics of GaAs/InGaAs quantum-well device" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SAIDI F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HAMILA R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MAAREF H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Structural and optical study of B" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1- x- y" } ] }, { "name": "text", "data": "As/GaAs and In" }, { "name": "sub", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1- y" } ] }, { "name": "text", "data": "As/GaAs QW's grown by MOCVD" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2010" }, { "name": "text", "data": "， " }, { "name": "text", "data": "491" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1-2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "45" }, { "name": "text", "data": "-" }, { "name": "text", "data": "48" }, { "name": "text", "data": "." } ], "title": "Structural and optical study of BxInyGa1- x- yAs/GaAs and InyGa1- yAs/GaAs QW's grown by MOCVD" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHAN C H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WU J D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HUANG Y S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Mater. Chem. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2010" }, { "name": "text", "data": "， " }, { "name": "text", "data": "124" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2-3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1126" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1133" }, { "name": "text", "data": "." } ], "title": "Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ROY S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HASSAN M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KARMAKER A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Strain-dependent optical properties of ［113］-oriented InGaAs/GaAs quantum well" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "2015 International Conference on Advances in Electrical Engineering （ICAEE）" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Rockville" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Maryland" }, { "name": "text", "data": ". " }, { "name": "text", "data": "IEEE" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "： " }, { "name": "text", "data": "340" }, { "name": "text", "data": "-" }, { "name": "text", "data": "343" }, { "name": "text", "data": "." } ], "title": "Strain-dependent optical properties of ［113］-oriented InGaAs/GaAs quantum well" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BUGGE F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZEIMER U" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SATO M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "MOVPE growth of highly strained InGaAs/GaAs quantum wells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Cryst. Growth" }, { "name": "text", "data": "， " }, { "name": "text", "data": "1998" }, { "name": "text", "data": "， " }, { "name": "text", "data": "183" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "511" }, { "name": "text", "data": "-" }, { "name": "text", "data": "518" }, { "name": "text", "data": "." } ], "title": "MOVPE growth of highly strained InGaAs/GaAs quantum wells" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SCHLENKER D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MIYAMOTO T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEN Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Cryst. Growth" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2000" }, { "name": "text", "data": "， " }, { "name": "text", "data": "209" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "27" }, { "name": "text", "data": "-" }, { "name": "text", "data": "36" }, { "name": "text", "data": "." } ], "title": "Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KANG S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KIM J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JANG C W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Thermally induced metastability of InGaAs single-layer for highly strained superlattices by metal-organic chemical vapor deposition" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "905" }, { "name": "text", "data": "： " }, { "name": "text", "data": "164252" }, { "name": "text", "data": "." } ], "title": "Thermally induced metastability of InGaAs single-layer for highly strained superlattices by metal-organic chemical vapor deposition" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GAO X G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "XU Y L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Carrier localization in strong phase-separated InGaN/GaN multiple-quantum-well dual-wavelength LEDs" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "726" }, { "name": "text", "data": "： " }, { "name": "text", "data": "460" }, { "name": "text", "data": "-" }, { "name": "text", "data": "465" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1016/j.jallcom.2017.07.326" } ], "href": "http://dx.doi.org/10.1016/j.jallcom.2017.07.326" } } ], "title": "Carrier localization in strong phase-separated InGaN/GaN multiple-quantum-well dual-wavelength LEDs" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MAROS A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "FALEEV N N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BERTONI M I" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Carrier localization effects in GaAs1- xSbx/GaAs heterostructures" }, { "name": "text", "data": "［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "， " }, { "name": "text", "data": "120" }, { "name": "text", "data": "（" }, { "name": "text", "data": "18" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "183104" }, { "name": "text", "data": "." } ], "title": "Carrier localization effects in GaAs1- xSbx/GaAs heterostructures" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GAO X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "FANG X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TANG J L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The strain， energy band and photoluminescence of GaAs0. 92Sb0.08/Al0. 3Ga0. 7As multiple quantum wells grown on GaAs substrate" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Solid State Commun." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "309" }, { "name": "text", "data": "： " }, { "name": "text", "data": "113837" }, { "name": "text", "data": "." } ], "title": "The strain， energy band and photoluminescence of GaAs0. 92Sb0.08/Al0. 3Ga0. 7As multiple quantum wells grown on GaAs substrate" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SHIMOSAKO N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "INOSE Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SATOH" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "118" }, { "name": "text", "data": "（" }, { "name": "text", "data": "17" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "175702" }, { "name": "text", "data": "." } ], "title": "Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MARCINKEVICIUS S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KELEHNER K M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "NAKAMURA S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optical properties of extended and localized states in m-plane InGaN quantum wells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2013" }, { "name": "text", "data": "， " }, { "name": "text", "data": "102" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "101102" }, { "name": "text", "data": "." } ], "title": "Optical properties of extended and localized states in m-plane InGaN quantum wells" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "JOHNSON N M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "NURMIKKO A V" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DENBAARS S P" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Blue diode lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Phys. Today" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2000" }, { "name": "text", "data": "， " }, { "name": "text", "data": "53" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "31" }, { "name": "text", "data": "-" }, { "name": "text", "data": "36" }, { "name": "text", "data": "." } ], "title": "Blue diode lasers" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ULLOAJ M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HIERRO A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MIGUEL-SANCHEZ J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Correlation between quantum well morphology， carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Semicond. Sci. Technol." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2006" }, { "name": "text", "data": "， " }, { "name": "text", "data": "21" }, { "name": "text", "data": "（" }, { "name": "text", "data": "8" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1047" }, { "name": "text", "data": "." } ], "title": "Correlation between quantum well morphology， carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes" } ] }, { "id": "R20", "label": "20", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG H Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG Q H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Effect of localized states on the optical properties in InGaAs/GaAs multiple quantum wells grown by MOCVD" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Photonic. Nanostruct." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "51" }, { "name": "text", "data": "： " }, { "name": "text", "data": "101047" }, { "name": "text", "data": "." } ], "title": "Effect of localized states on the optical properties in InGaAs/GaAs multiple quantum wells grown by MOCVD" } ] }, { "id": "R21", "label": "21", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SU Y K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEN W C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WAN C T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Cryst. Growth" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2008" }, { "name": "text", "data": "， " }, { "name": "text", "data": "310" }, { "name": "text", "data": "（" }, { "name": "text", "data": "15" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "3615" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3620" }, { "name": "text", "data": "." } ], "title": "Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE" } ] }, { "id": "R22", "label": "22", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "O’DONNELL K P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEN X" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Temperature dependence of semiconductor band gaps" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1991" }, { "name": "text", "data": "， " }, { "name": "text", "data": "58" }, { "name": "text", "data": "（" }, { "name": "text", "data": "25" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2924" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2926" }, { "name": "text", "data": "." } ], "title": "Temperature dependence of semiconductor band gaps" } ] }, { "id": "R23", "label": "23", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GE X T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG D K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GAO X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Localized states emission in type‐I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Phys. Status Solidi RRL" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "11" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1700001" }, { "name": "text", "data": "." } ], "title": "Localized states emission in type‐I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220375", "clc": [ [ { "name": "text", "data": "O482.31" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032（XXXX）XX-0001-07", "citeme": [ { "data": [ { "name": "text", "data": "王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题研究[J].发光学报,DOI:10.37188/CJL.20220375" } ], "text": "王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题研究[J].发光学报,DOI:10.37188/CJL.20220375" }, { "data": [ { "name": "text", "data": "WANG Qu-hui,WANG Hai-zhu,WANG Jiao,et al.Study on the Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220375" } ], "text": "WANG Qu-hui,WANG Hai-zhu,WANG Jiao,et al.Study on the Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220375" } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "吉林省科技发展计划（20210201089GX）；重庆市自然科学基金（cstc2021jcyj-msxmX1060）资助项目" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by Jilin Science and Technology Development Plan（20210201089GX）；Natural Science Foundation of Chongqing City（cstc2021jcyj-msxmX1060）" } ] } ], "history": { "epub": "2022-11-22", "opub": "2022-11-22" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "originalSource": [] }