Research Progress on the Application of Pseudo-halide Anion Engineering in Perovskite Solar Cells Enhanced Publication

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chencong@hebut.edu.cn；", "data": [ { "name": "text", "data": "E-mail： songhw@jlu.edu.cn； chencong@hebut.edu.cn；" } ] } ], "bio": [ { "lang": "zh", "text": [ "陈聪（1990－），男，吉林长春人，博士，副教授，2019年于吉林大学获得博士学位，于2019年加入河北工业大学，主要从事高效与长时稳定的钙钛矿太阳能电池/NIR光电探测器的研究。E-mail： chencong@hebut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123969&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123971&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123970&type=", "width": "19.08940887", "height": "28.58943176", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "陈聪" }, { "name": "text", "data": "（1990－），男，吉林长春人，博士，副教授，2019年于吉林大学获得博士学位，于2019年加入河北工业大学，主要从事高效与长时稳定的钙钛矿太阳能电池/NIR光电探测器的研究。E-mail： " }, { "name": "text", "data": "chencong@hebut.edu.cn" } ] ] } ], "email": "chencong@hebut.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "河北工业大学 材料科学与工程学院，天津　300401", "data": [ { "name": "text", "data": "河北工业大学 材料科学与工程学院，天津　300401" } ] }, { "lang": "en", "label": "1", "text": "School of Material Science and Engineering，Hebei University of Technology，Tianjin 300401，China", "data": [ { "name": "text", "data": "School of Material Science and Engineering，Hebei University of Technology，Tianjin 300401，China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室，吉林 长春　130012", "data": [ { "name": "text", "data": "吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室，吉林 长春　130012" } ] }, { "lang": "en", "label": "2", "text": "State Key Laboratory on Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University， Changchun 130012， China", "data": [ { "name": "text", "data": "State Key Laboratory on Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University， Changchun 130012， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "金属卤化物钙钛矿的太阳能电池已经能够实现25.7%的认证光电转化效率，接近于晶硅太阳能电池26.7%的最高认证效率。众所周知，ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿材料的晶体结构组分工程在实现高效和稳定的器件方面发挥着关键作用，尤其是近几年被研究人员广泛关注的X位卤素阴离子的组分工程。最近，研究人员在引入赝卤素阴离子作为钙钛矿晶体的掺杂组分、前驱体添加剂、薄膜后处理材料、电荷传输材料、界面钝化剂以及改性剂等方面的开展了多项研究工作，结果证明赝卤素离子修饰是提高器件效率和稳定性的重要策略。本综述详细对比和总结了目前可用于钙钛矿太阳能电池的多种类型的赝卤素离子，并对其影响钙钛矿晶体薄膜形貌、光电特性、载流子迁移特性和器件光伏特性和稳定性等方面的深入机理和作用本质进行了深入总结。于此同时，本文还对目前尚未被探索开发的赝卤素离子进行了展望和分析，以期在未来研究中能有效促进钙钛矿太阳能电池光伏特性的提升。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Metal halide perovskite solar cells have been able to achieve certified photovoltaic conversion efficiencies of 25.7%， approaching the maximum certified efficiency of 26.7% for crystalline silicon solar cells. It is well known that the component engineering of the crystal structure of ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " perovskite materials plays a key role in achieving efficient and stable devices， especially the component engineering of the X-site halide anion， which has received much attention from researchers in recent years. Recently， researchers have carried out several studies on the introduction of pseudo-halide anions as doping components， precursor additives， thin film post-treatment materials， charge transport materials， interfacial passivation， and modifiers for perovskite crystals， and the results demonstrate that pseudo-halide ion modification is an important strategy to improve device efficiency and stability. This review provides a detailed comparison and summary of the various types of pseudo-halide ions currently available for use in perovskite solar cells and provides an in-depth summary of the mechanisms and nature of their effects on perovskite crystal film morphology， photovoltaic properties， carrier migration properties， and device photovoltaic characteristics and stability. At the same time， this paper also provides an outlook and analysis of the currently unexplored pseudo-halide ions， to effectively contribute to the enhancement of the photovoltaic properties of perovskite solar cells in future research." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "赝卤素离子" } ], [ { "name": "text", "data": "组分工程" } ], [ { "name": "text", "data": "钙钛矿太阳能电池" } ], [ { "name": "text", "data": "缺陷钝化" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "Pseudo-halide ions" } ], [ { "name": "text", "data": "Component engineering" } ], [ { "name": "text", "data": "Perovskite solar cells" } ], [ { "name": "text", "data": "Defect passivation" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "目前为止，钙钛矿太阳能电池（PSCs）器件光电转换效率（PCE）已经达到25.7%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这归功于多种调控策略，如组分工程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R2", "R3", "R4" ], "text": "2-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，前驱体工程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R5", "R6", "R7" ], "text": "5-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，添加剂工程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R8", "R9", "R10", "R11", "R12" ], "text": "8-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，电荷传输层工程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R13", "R14", "R15", "R16", "R17" ], "text": "13-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以及界面工程等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R18", "R19", "R20", "R21", "R22" ], "text": "18-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而在组分工程中，阴离子组分工程又起到了至关重要的作用。众所周知，PSCs中广泛使用的ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿材料分子结构中（" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "a），A是一价阳离子（如甲铵（MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）、甲脒（FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "或Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ")，B是二价金属阳离子（如Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "或Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "），X是一价阴离子(如I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "或Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": ")。研究发现，通过调控X位点的阴离子可有效提高PSCs的综合性能，包括半导体带隙、载流子迁移特性和稳定性等。而赝卤素离子与卤素阴离子在钙钛矿结构中具有类似的化学行为和性质。因此赝卤素离子同样可以作为卤素离子的一种替代材料。目前人们对赝卤素离子在PSCs中的应用已经进行了大量探索，例如，三氟乙酸根（TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，硫氰酸根（SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，甲酸根（HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，醋酸根(CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "COO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": ") " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，双三氟甲烷磺酰亚胺根（TFSI" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，六氟磷酸根（PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，四氟化硼离子（BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，5-氨基戊酸根（NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "C" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "COO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等等。利用赝卤素离子对PSCs的稳定性、电学性能、薄膜结晶等方面进行调控已经被证明是一种有效的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } } ], "rid": [ "R30", "R31", "R32" ], "text": "30-32", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）化学式为ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的钙钛矿晶格单元示意图，其中A为有机（如：MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）或金属阳离子（如：Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "），B为中心阳离子（如：Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "），X为卤化物阴离子（如：I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）； （b）一些常见的X位赝卤素离子分子结构。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Schematic diagram of a perovskite lattice unit with the chemical formula ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， where A is an organic （e.g.， MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "） or metal cation （e.g.， Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）， B is a central cation （e.g.， Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "）， and X is a halide anion （e.g.， I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "） （b）Molecular structures of some common X-position pseudohalide ions." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123972&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123974&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123973&type=", "width": "105.74099731", "height": "42.29631042", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "赝卤素离子除了可以被引入到光吸收材料中，还可用于传输层。自双三氟甲磺酰亚胺锂（LiTFSI）成为传输层材料以来，PSCs的效率有了很大的提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但Li" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "对水分敏感，因此人们在此基础上设法用其他金属阳离子代替Li" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "提高PSCs的湿稳性，如双三氟甲烷磺酰基亚胺银（AgTFSI）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，双三氟甲磺酰基酰亚胺锌（Zn(TFSI)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。除此以外，人们将还将一些其他的赝卤素离子作为离子修饰剂来改善钙钛矿与传输层之间的界面提高效率和稳定性，也取得了较好的效果" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然有文章综述了包含赝卤素材料的钝化离子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但研究人员对于这种在游离状态下化学性质与卤素离子相似材料的分类报道不够准确，因此我们认为有必要对其进行一个系统而全面的综述。本文重点对赝卤素离子应用于PSCs的所取得的研究进展进行了介绍总结，目的是促进该类材料在光伏领域的进一步发展。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　赝卤素离子的分类及特性" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "赝卤素离子与卤化物离子具有相似的离子半径和化学性质，具有多样的结构（" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "b），能通过分子间作用（如氢键）或原子间作用（如共价键、离子键）等钝化钙钛矿表面及内部缺陷，提升PSCs性能。其中四氯化硼离子（BCl" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "），BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "和SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "离子半径与I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "类似且符合理想容忍因子范围（" }, { "name": "italic", "data": [ { "name": "text", "data": "t " } ] }, { "name": "text", "data": "= 0.7-1）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在钙钛矿晶格中可以调节钙钛矿稳定性、带隙、形貌和电荷传输特性等方面。而其余一些大分子赝卤素离子则对调控钙钛矿晶体的成核和生长有一定的作用。除此之外，苯硫酚离子（C" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "S" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）和甲硫基离子（CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）离子，由于具有类似的赝卤素特性，也具有一定的研究价值。因此，赝卤素离子应用于钙钛矿前驱体添加剂、后处理试剂、电荷传输层改良剂等方面的潜力巨大。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　赝卤素离子对钙钛矿晶体结构的调控作用" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "PSCs从根本上受到晶体内部和表面缺陷的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } } ], "rid": [ "R39", "R40", "R41", "R42" ], "text": "39-42", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。缺陷会伴随着钙钛矿带隙内电子态的形成，导致载流子的非辐射复合，从而降低PSCs的光伏特性。此外，缺陷导致的离子迁移会造成钙钛矿晶体结构退化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。研究表明，间隙和空位的碘化物分别会形成深能级和浅能级陷阱状态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，缺陷工程对于降低钙钛矿缺陷密度，提高薄膜质量至关重要。科研人员考虑利用这类与卤素离子半径相似的赝卤素离子如BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-[3, 8, 46]" } ] }, { "name": "text", "data": "，PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-[47]" } ] }, { "name": "text", "data": "，SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-[48]" } ] }, { "name": "text", "data": "来钝化钙钛矿晶体缺陷，提高PSCs性能，本节将列举一些赝卤素离子以供参考。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "在钙钛矿薄膜形成中具有一定的作用，这是由于在醋酸盐体系的钙钛矿具有较低的活化能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这有助于减少钙钛矿晶体缺陷。Zhao等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "于2016年将醋酸（HAc）分别引入PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基和PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基前驱体溶液，研究了醋酸根离子对不同铅源钙钛矿薄膜的形貌、结构、电子性能和光伏性能的影响。通过以下步骤制备钙钛矿：1）溶剂蒸发；2）去除前驱体结构中非相关的盐；3）去除薄膜中非相关的盐；4）从钙钛矿晶格中去除MAI" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在前驱体添加适量Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "后，溶液中生成了比MAI挥发性更强的醋酸甲酯铵（MAAc），减少了非相关盐的扩散和去除时间，促进了钙钛矿过饱和溶液的形成" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从薄膜SEM图（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "a,b）可以看出，加入适量的HAc后薄膜质量及覆盖率均得到提高。薄膜表现出了比PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基薄膜更高的光吸收能力和更高效的载流子传输提取。制备的PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基平面型PSCs明显优于PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基PSCs。Liang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过将乙酸正丁胺(BAAc)引入钙钛矿中代替传统的卤化物间隔基碘化正丁胺（BAI），通过第一性原理计算出BAAc更有利于优先形成纯相量子阱薄膜。相比于多量子阱薄膜，纯相量子阱膜具有光滑的表面，具有较大的晶体尺寸和较少的缺陷。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）含有0.5 mol PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基钙钛矿薄膜的SEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）含有0.5 mol PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基钙钛矿薄膜的SEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）PeLED的器件结构" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d，e）模拟胶体粒子过度聚集条件下变化的光学图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （f）在365 nm紫外灯的激发下不同FAOAc比例的准二维钙钛矿薄膜的PLQY 图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a）SEM image of perovskite film containing 0.5 mol PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）SEM image of perovskite film containing 0.5 mol PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）The device structure of PeLED" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d，e）Optical images that simulate changes under conditions of excessive aggregation of colloidal particles" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （f）PLQY images of quasi-2D perovskite thin films with different FAOAc ratios excited by a 365 nm UV lamp" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123975&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123977&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123976&type=", "width": "158.49890137", "height": "87.71705627", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "传统的B位Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入方法是加入卤化铅（PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等）材料，最近利用醋酸铅（PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）等替代卤化铅被证明是一种非常有效的方法。PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·3H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O作为铅源时其中少量的水合物在钙钛矿膜表面和晶界上会伴生形成MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "·xH" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O，获得了晶体粒径达100 µm的高取向钙钛矿薄膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这是由于奥斯瓦尔德熟化增长产生了一种准液态，给MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "提供了良好生长环境。使用这种方法获得的PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·3H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O基器件的PCE比PbAc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基器件提升了近40%。Xing等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现将MAAc作为添加剂以及采用4-氯苯磺酸（Cl-BSA）钝化后，表征结果显示该策略有效抑制了钙钛矿前驱体中胶体粒子的聚集（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "d,e），减少了钙钛矿薄膜在的针孔和晶间裂纹的微米级缺陷，钝化了界面间的深能级陷阱，减少了漏电现象，制备的柔性器件最终实现了18.12%的PCE。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在准二维钙钛矿薄膜中加入有机铵盐可以提高光致发光量子产率（PLQY），但是过量的有机铵盐会形成绝缘覆盖层，阻碍载流子迁移，导致低维钙钛矿（n = 1和 n = 2）相的形成。Ding等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在准二维钙钛矿结构中加入不同比例的醋酸甲脒（FAOAc）将其转化为三维CsFAOAc钙钛矿，并用于发光二极管（PeLED），结构如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "c所示。FAOAc对PLQY的提升作用在于Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "洗去了多余的铵离子，FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "提高了低维（n = 2）相的生成能。最终薄膜的PLQY提高至59.9%（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "f），载流子迁移率提高至47.3 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，可有效用于发光二极管。以上研究表明，Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "明显对于调控钙钛矿结晶、改善晶体缺陷和增加载流子迁移率等方面具有独特的作用。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "中羧基碳原子的电子密度比其他羧酸低，因为具有共轭效应，其羧基氧原子上的电子更偏向碳，在钙钛矿中可以与Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "形成金属有机络合物，延缓钙钛矿结晶。Wang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于密度泛函理论发现HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "掺杂的立方MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿中形成的直接带隙材料，会形成巨大的能带劈裂效应，应用于PSCs吸收层可以提高PCE。2016年Seo等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用离子液体甲酸甲铵（MAFa）在SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "沉积的FTO玻璃基底上合成了高质量的钙钛矿层，形成了较大尺寸的晶粒，PCE提高到了19.5%。前驱体中加入MAFa后（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "a），MAFa中的HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "配位，在后续退火过程中I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "逐步取代HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，直到最后HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "基被完全取代。此外，晶体分析显示纯钙钛矿的高度定向晶体没有晶格结构的改变，没有杂质相。因此他们认为器件性能的改善归功于HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "提高了钙钛矿薄膜质量并减少了陷阱以及载流子复合。2021年Hui等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用MAFa作为钙钛矿前驱体溶剂，PSCs实现了24.1%的PCE。他们发现HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "牵引着PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "规则排列，形成了垂直取向生长的纳米级“离子通道”PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "晶体结构（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "c）。这些通道加速了有机阳离子进入薄膜内部生成稳定的α-FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）由甲酸盐阴离子控制的钙钛矿晶体生长机理示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子与HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "阴离子在钙钛矿前驱体溶液中配位作用的分子动力学快照" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "在MAFa和PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "在DMF：DMSO溶液中相互作用的示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d）FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "型PSCs的结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （e）扫描电子显微镜测量的RbHCOO、KHCOO钙钛矿薄膜的表面和截面形貌" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a）Schematic illustration of the growth mechanism of perovskite crystals controlled by formate anions" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Molecular dynamics snapshot of the coordination between Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " ions and HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "- " } ] }, { "name": "text", "data": "anions in perovskite precursor solutions" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）Schematic representation of the interaction of PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " in Mafa and PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " in DMF： DMSO solution" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d）Schematic diagram of the structure of FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-type PSCs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （e）Surface and cross-sectional morphologies of RbHCOO and KHCOO perovskite films were measured by scanning electron microscopy" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123978&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123980&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123979&type=", "width": "132.38455200", "height": "123.72138214", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "不仅具有控制成核和帮助晶粒长大的作用，还可以与FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "离子形成氢键网络（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "b）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，抑制钙钛矿薄膜中阴离子空位缺陷，减少由于碘空位引起的离子迁移。Jeong等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在钙钛矿前驱体溶液中引入2%的甲酸甲脒(FAHCOO)制备出结晶度提高、晶粒尺寸增大的FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜。器件开路电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "）达到了1.21 V，约为单结太阳能电池（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "d）所能达到的理论极限的96%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。器件的认证效率达到25.2%。HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与阳离子协同作用也会改善PSCs性能。Sakshi等人将碱金属阳离子（Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、K" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）和HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的整合到碱金属甲酸盐（即甲酸铷（RbHCOO）和甲酸钾（KHCOO））的掺杂工程中" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。分析表明，掺杂少量的碱金属甲酸盐会导致晶体生长和晶界还原，获得大尺寸的晶粒（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "e），高质量的薄膜进一步钝化与抑制了体积和表面的缺陷。此外，钛矿晶体的快速结晶是由于胶体的溶解，而前驱体中的胶体大小在决定合成薄膜性能方面起着重要作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Noel的研究小组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将甲酸作为添加剂加入MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "前驱体中，通过观察其胶体分布，发现甲酸显著减小了前驱体中的胶体粒子，又通过SEM图证实了甲酸修饰后的钙钛矿具有较高质量的薄膜。以上研究结果表明，HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "对于抑制缺陷生成，提高开路电压，制备高PCE的PSCs具有显著效果。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的有效离子半径约为217 pm，与I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的离子半径（220 pm）接近" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。并且SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "为稳定的共振线性路易斯（Lewis）结构，其中的S和N原子的孤对电子能与Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "发生键合作用，形成稳定的钙钛矿结构。硫氰酸盐化合物硫氰酸铅（Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）常被用于钛矿前驱体以改善PSCs性能。这是由于其既可以作为铅源完全替代卤化铅，也可以作为卤化铅基钙钛矿的掺杂剂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2015年Jiang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "用SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "取代MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中的I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "开发了一种新型钙钛矿材料MAPb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I，大大提高了耐水性（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "a,b）。Ke等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现加入Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "后提高了钙钛矿薄膜的晶粒尺寸和结晶质量，降低了电池迟滞。退火后的钙钛矿薄膜中未发现明显SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "残留，这是由于结晶过程中MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "与SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "发生反应生成了CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气体。而CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气体才是造成晶粒尺寸增大和薄膜质量提高的原因。掺杂后过量的PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "分布在晶界处（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "d,e），减少晶界处缺陷所造成的漏电现象，提高" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "。Li等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用硫氰酸铵（NH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "SCN）调控的CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "薄膜。在未破坏其原有的钙钛矿结构的同时提升了器件的PCE。Sun等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "比较了热退火工艺和添加Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对三阳离子钙钛矿薄膜以及器件性能的影响。结论是二者都有助于提高钙钛矿的结晶度、光吸收和光致发光（PL）寿命，还可以阻止形貌缺陷和PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "相的形成，抑制电荷复合。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和（b）CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Pb（SCN）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I在相对湿度为95%的空气中的加速稳定性试验" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）各种形式MA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Pb（SCN）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的实验和计算XRD光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d，e）在SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "上沉积不含有和含有5% Pb（SCN）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的钙钛矿薄膜SEM图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （f，g）显示了3D钙钛矿主体晶界处的2D相的TEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （h）SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "溶液在DMF：DMSO（体积比为8：2）溶剂中在八分钟内变化的照片，溶剂具有不同的添加剂成分" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）Accelerated stability test of CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and （b）CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Pb（SCN）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I in the air with a relative humidity of 95%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）Experimental and Computational XRD Spectra of Various Forms of MA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Pb（SCN）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d，e）SEM images of perovskite films without and with 5% Pb（SCN）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " deposited on SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （f，g）A TEM image of the 2D phase at the 3D perovskite host grain boundaries is shown" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （h）Photographs of SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " solutions in DMF： DMSO （8：2 by volume） solvent over eight minutes with different additive compositions" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123981&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123983&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123982&type=", "width": "149.90496826", "height": "114.63345337", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Tang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在(MA)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "中使用第一性原理计算研究了掺入SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的作用。结果表明在顶端位置插入不对称SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "会导致Pb-S键长缩短、Pb-I-Pb键角减小，禁带宽度增加。这有助于抑制PSCs中的载流子复合，提高载流子寿命。Labram等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过对XRD光谱的研究发现MA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜在[100]方向上具有择优取向（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "c），推断出2D层状MA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的取向平行于基板，这有利于提升载流子的传输效率。2020年Kim等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现二维PEA(I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "SCN" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": ")层状结构可以钝化三维钙钛矿主体晶界（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "f,g），制备的单片双端宽禁带钙钛矿/硅串联太阳能电池的PCE高达26.7%。如果将Pb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和硫氰酸胍（GASCN）以摩尔比为1:1混合在前驱体溶液中，可形成完全用SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "取代卤化物阴离子的三维钙钛矿材料GAPb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，具有高稳定性优势，但由于GAPb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的低光吸收系数和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/GAPb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "界面的高陷阱态密度（DOS），GAPb(SCN)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基PSCs的PCE仅为0.11%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于上述的铅基PSCs所具有的毒性较大，因此有研究人员将目光放在了锡基PSCs上。但Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "极易被氧化为Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "产生自掺杂，所以目前Sn基PSCs光电性能相较于Pb基PSCs还有一定的差距。正因如此，减少Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的氧化是Sn基PSCs研究中的重点。H Kim等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "考虑利用适当的配体提前阻断二维锡基钙钛矿中Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "与氧的反应。使用甲脒硫氰酸盐（FASCN）作为添加剂，发现SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "可以与Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的空电子轨道配合，抑制Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "氧化。并且SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与传统的Sn基抗氧化剂SnF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "共同作用时抗氧化效果更好（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "h）。SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "作为一种常见的赝卤素掺杂剂，在钙钛矿中灵活广泛应用有助于开发更高效稳定的PSCs。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "是一种有机酸，其羧基的邻位碳上连有三个电负性较强的氟原子。一般来说基于TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的三氟乙酸盐作为添加剂时具有一定的协同效应。TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "可以和半径较小的阳离子如Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "同时进入钙钛矿晶格，延缓结晶、钝化晶界缺陷，得到高质量薄膜。Qiu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用三氟乙酸铯（CsTFA）优化后的器件PCE达到了22.82%，相对湿度为40-45%的空气中避光存储850小时后，未封装的设备还可以维持约91%的初始效率（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "a）。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）有无CsTFA优化的器件在相对湿度为40-45%的空气中避光存储850小时的PCE变化" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）两种缺陷在未修饰和分别用FPMA以及TFA修饰后的DOS图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）含MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "离子液体添加剂诱导的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜晶界功能化和晶界晶化的示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d）添加了0.5 mol% ［EMIM］TFA添加剂薄膜的HRTEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （e）由ToF-SIMS分析得到的［EMIM］TFA钙钛矿薄膜的3D图，显示了EMIM" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和F" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "信号在钙钛矿层中的分布" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a）PCE changes of devices with and without CsTFA optimization stored in air at 40-45% relative humidity in the dark for 850 hours" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）DOS maps of the two defects in unmodified and modified with FPMA and TFA， respectively" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）Schematic illustration of grain boundary functionalization and grain boundary crystallization of MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " perovskite films induced by ionic liquid additives containing MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " and TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-［76］" } ] }, { "name": "text", "data": ". （d）HRTEM image of thin films with 0.5 mol% ［EMIM］TFA additive" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （e）3D image of ［EMIM］TFA perovskite film obtained from ToF-SIMS analysis， showing the distribution of EMIM" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " and F" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": " signals in the perovskite layer" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123984&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123986&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123985&type=", "width": "152.60864258", "height": "126.68301392", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "虽然金属卤化物钙钛矿具有极强抵御缺陷的能力，但产生的缺陷仍然会有较强的非辐射复合，加剧器件的不稳定性。中国科学技术大学的Fang等人研发了一种添加剂可以实现碘和铅的双重钝化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，它们采用酸碱中和方法合成了4-氟苯甲基三氟乙酸铵（FPMATFA），其中的FPMA阳离子可以与卤化物悬挂键配位钝化缺陷；同时TFA阴离子可以与铅键合钝化缺陷。通过计算两种缺陷的态密度DOS图可以证明FPMATFA具有的高钝化能力（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "b），器件的半衰期寿命从0.2小时提高到了14小时以上。Liu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现，MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "添加剂可以诱导MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜的晶粒生长和晶粒边界功能化。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "c所示，MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "含有多个氟碳基团，这赋予该化合物独特的极性疏水性。将MATFA加入MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.7" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "前驱体中发现钙钛矿疏水性以及晶粒尺寸均大幅提高。离子液体1-乙基-3-甲基咪唑三氟乙酸盐（[EMIM]TFA）作为添加剂可以多层次钝化钙钛矿缺陷并且诱导形成一维[EMIM]" }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "d）。表征结果显示EMIM" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "在钙钛矿上表面、体相内部和埋底界面均有分布，而TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "主要分布在钙钛矿层底面（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "e），这可能与TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "离子的定向扩散有关，有助于提高电荷传输的效率。添加了[EMIM]TFA的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基PSCs的PCE达到了22.14%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "作为一种最近备受关注的赝卤素离子，其优异的钝化缺陷效果和良好的疏水特性有助于PSCs的商业化应用。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.5　BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] } ], "level": "2", "id": "s3e" } }, { "name": "p", "data": [ { "name": "text", "data": "BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "也是一种有效应用钙钛矿的赝卤素离子，氟离子提供孤对电子,硼原子提供空轨道，形成配位键之后，电子共有化后可以形成一种正四面体形结构。众所周知，由于MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "(3-x)" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "的容忍因子" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "不在0.7-1范围内" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，无法形成稳定的钙钛矿。因此元素周期表第VIIA列中离子半径最小的F元素不能用于取代MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中的I元素。而Chung及其同事" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "应用了含F的CsSnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2.95" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "作为固态染料敏化太阳能电池中的空穴导体，空穴电导率和器件性能都得到了显著改善。因此可以考虑用BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "在钙钛矿中引入F元素。Nagane等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用MABF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "化学气相沉积法在PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上制备的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "(BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "在766 nm处出现近带边发光，有良好的光响应强度，且低频电导率比MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "相比提高了一个数量级，表现出优良的光伏潜力（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "a,b）。Sheng等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在由MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和5-戊酸碘化铵（5-AVAI）组成的钙钛矿前驱体溶液中添加MABF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "制备出的(5-AVA)" }, { "name": "sub", "data": [ { "name": "text", "data": "0.034" } ] }, { "name": "text", "data": "MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.966" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "(BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "钙钛矿薄膜缺陷密度降低。无空穴传输层的PSCs（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "d）的PCE为15.5%，高于对照器件(13.4%)。2019年Zhang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用NH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "掺入钙钛矿获得FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.17" } ] }, { "name": "text", "data": "PbIBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "(BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "。BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "和Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "之间较弱的键合使钙钛矿晶格发生膨胀和弛豫，XRD显示掺杂后钙钛矿的(100)晶面衍射峰向较低的2θ移动（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "c）。同时，BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的有效掺入降低了钙钛矿中的陷阱密度（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "e），从而抑制了非辐射复合。将1-丁基-3-甲基咪唑鎓四氟硼酸盐([BMIM]BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")掺入钙钛矿后提高了钙钛矿薄膜和器件的稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中BMIM" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "结合在多晶钙钛矿薄膜的表面和晶界，增加薄膜对水氧的抵御能力。对照薄膜还显示出PL猝灭（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "f）的现象，这可能是缺陷的积累以及钙钛矿的结构退化导致的。2020年Lin等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将1-丁基-1-甲基哌啶四氟硼酸盐（BMPBF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）对钙钛矿进行进行掺杂，掺杂后的钙钛矿薄膜表征结果显示添加BMPBF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "后没有影响电荷载体迁移率，反而由于F的多点位分布（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "g），有效抑制了钙钛矿的深陷阱状态。由此推测BMPBF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "可以延缓钙钛矿吸收层中杂质成分偏析和针孔的形成，减低了缺陷态密度。BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "作为一种常用于离子液体的阴离子组分，其所具有的优异化学性能在新型可溶液加工的太阳能电池领域具有广阔的应用前景。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）目标和控制钙钛矿与频率相关的电导率" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）在AM1.5照明、零偏压下CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "（3-x）" } ] }, { "name": "text", "data": "（BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "混合钙钛矿的光响应" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）（001）和（012）晶面的XRD图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d）无空穴传输层PSCs的结构图和横截面SEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （e）有无添加NH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "器件的陷阱态密度" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （f）恒定外加偏压（10 V）下有无添加［BMIM］BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "的薄膜光致发光图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （g）显示了通过钙钛矿层的" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": "F" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "信号分布情况的3D图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a）Targeting and controlling the frequency-dependent conductivity of perovskite devices" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Photoresponse of CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "（BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": " hybrid perovskites under AM1.5 illumination and zero bias" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）XRD patterns of （001） and （012） planes" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d）Structural diagram and cross-sectional SEM images of hole-free PSCs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （e）Density of trap states of devices with and without the addition of NH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （f）Photoluminescence images of thin films with and without the addition of ［BMIM］BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " under constantly applied bias （10 V） " }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （g）3D map showing the " }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": "F" }, { "name": "sup", "data": [ { "name": "text", "data": "- " } ] }, { "name": "text", "data": "signal distribution through the perovskite layer" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123987&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123989&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123988&type=", "width": "152.44885254", "height": "111.98840332", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.6　BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] } ], "level": "2", "id": "s3f" } }, { "name": "p", "data": [ { "name": "text", "data": "BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "可用于调节钙钛矿带隙以及激子结合能。2016年Yao等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "证实当二维钙钛矿BAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "中的I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "被BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "取代时（" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "a），其带隙和激子结合能随BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "含量单调增加。并且BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "具有高电子亲和力，因此BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "可以用作调整二维混合钙钛矿的带隙和激子结合能。从维数的降低可以看出，量子限制可以与BA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "MI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "杂化钙钛矿的组成变化相结合，以产生具有改进的光电性能的材料。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）BA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "MI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "和BA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "M（BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "（M＝Ge、Sn、Pb）的晶体结构" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "和MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AlH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "钙钛矿中Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "空位的缺陷形成能" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "形成氢键示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "（a）Crystal structures of BA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "MI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " and BA" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "M（BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " （M=Ge， Sn， Pb）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Defect formation energies of Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " vacancies in MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " and MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AlH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " perovskites" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）Schematic diagram of hydrogen bonding between BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": " and MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+［84］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123990&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123992&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123991&type=", "width": "121.23390961", "height": "94.55049896", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Sn基杂化卤化物钙钛矿是替代Pb的潜在解决方案。然而，空气中Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的不稳定性导致MASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的重复性差，阻碍了实现这一目标的实现。加入BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "离子后，Sn基钙钛矿中可以提高Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的抗氧化性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而提高了Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的缺陷形成能（" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "b）。Xu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "前驱体溶液添加四丁基硼氢化铵（TAB）获得了MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "(BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "。BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "通过氢键与MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "相互作用，有效抑制了内部缺陷的形成和缺陷迁移，提高了器件的效率和稳定性（" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "c）。具有FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Perovskite/2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴（spiro-OMeTAD）/Au结构的PSCs的PCE为21.10%，高于对照器件的18.43%。BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "由于具有亲核性，易进行离子转移，这极大增强了其钝化钙钛矿中铅、碘等缺陷的能力，有望作为一种易制备的的掺杂离子用于PSCs中。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　赝卤素离子对钙钛矿层的后处理" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "对高质量钙钛矿薄膜的可控制备是实现高效稳定PSCs的关键。选用合适的化学试剂进行后处理可以降低缺陷密度、抑制非辐射复合、保护钙钛矿免受水分影响，从而提高器件的效率和稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "醋酸钾（KAc）可以作为钙钛矿底部和顶部界面层来提高PSCs的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SC" } ] }, { "name": "text", "data": "。应用于p-i-n结构时，位于钙钛矿底部的KAc通过K" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "的扩散来改善钙钛矿的整体质量，并使HTL侧的价带顶（VBM）移动以利于电荷提取。应用于n-i-p结构钙钛矿顶的KAc层则使能带更匹配" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "用硫氰酸铵（NH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "SCN）对制备好的钙钛矿薄膜进行处理可以诱导钙钛矿再结晶" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其反应过程分为:1）从原始薄膜中提取部分有机阳离子;2）重组框架;3）钙钛矿膜的再结晶（" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "a）。SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "离子只起到了二次形成钙钛矿催化剂的作用，不改变钙钛矿的成分。因此，这种后处理方法可以改变钙钛矿膜的形态，获得较高的结晶度和较低的陷阱态密度。Yu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将2-噻吩乙胺硫氰酸酯（TEASCN）用于Sn-Pb混合钙钛矿表面，构建了双层准二维结构。这种双层结构可以钝化钙钛矿表面缺陷并确保载流子的有效迁移。理论模拟得出TEASCN的加入使结构在热力学上更加稳定，这为定制准二维钙钛矿结构的层数提供了可能。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "（a）钙钛矿薄膜再结晶过程示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）钙钛矿薄膜FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.88" } ] }, { "name": "text", "data": "Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "（PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "形成示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）ClTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "和BrTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d）ClTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "和BrTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "修饰后器件能级排列图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "（a）Schematic diagram of the recrystallization process of perovskite thin films" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Schematic diagram of the formation of perovskite film FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.88" } ] }, { "name": "text", "data": "Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3-x" } ] }, { "name": "text", "data": "（PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）Schematic diagram of the structures of ClTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " and BrTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d）The energy level arrangement diagram of the modified device with ClTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " and BrTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123993&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123995&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123994&type=", "width": "135.56918335", "height": "64.99935913", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "作为后处理试剂时可以与Gua" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "协同作用，使钙钛矿薄膜晶粒尺寸变大，结晶度变高。Huang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将四氟硼酸胍（GuaBF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）作为钝化层引入MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/[6,6]-苯基-C" }, { "name": "sub", "data": [ { "name": "text", "data": "61" } ] }, { "name": "text", "data": "-丁酸甲酯（PC" }, { "name": "sub", "data": [ { "name": "text", "data": "61" } ] }, { "name": "text", "data": "BM）之间的界面发现其钝化了表面缺陷且优化了界面能级排列。同时光学和电学研究表明，GuaBF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "表面处理可以抑制陷阱辅助载流子复合损失，减少MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/PC" }, { "name": "sub", "data": [ { "name": "text", "data": "61" } ] }, { "name": "text", "data": "BM界面处的电荷积累，促进电荷载流子的传输和提取。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Lee等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将1-丁基甲基咪唑六氟磷酸盐（[BMIM]PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）引入钙钛矿和HTL之间的界面，有效地抑制了电荷复合。Chen等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用FAPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "作为FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.88" } ] }, { "name": "text", "data": "Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜表面的后处理溶液（" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "b），导致I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "被PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "部分取代。不同PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "置换率的钙钛矿在容忍因子位于0.7-1的范围内均可形成稳定的钙钛矿。He等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "分别用两种六氟磷酸三吡咯烷盐（ClTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "和BrTPPPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）来调节钙钛矿薄膜和Spiro-OMeTAD之间的界面能级（" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "c,d），使二者的能级更匹配，这有利于载流子的界面传输。以上研究结果表明，赝卤素离子对于钙钛矿层后处理方面也具有一定的效果，这需要研究人员在后续的工作中继续深入研究。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　赝卤素离子对电子传输层的调控作用" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "PSCs的实际应用在很大程度上取决于其在实时测量条件下的效率和稳定性能。这些参数在很大程度上受电荷传输层的质量以及钙钛矿层和电荷传输层之间的界面的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "91", "type": "bibr", "rid": "R91", "data": [ { "name": "text", "data": "91" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "是最常用的电子传输材料，但其电子迁移率低并且具有大量缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Nb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "、ZnO、SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的迁移率明显高于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，但是，界面上的缺陷严重阻碍了电荷注入过程，导致电荷累积，降低器件效率和稳定性。为了解决这些问题，在钙钛矿和电子传输层（ETL）界面引入修饰层可以钝化缺陷，提高电荷注入效率，实现长期稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由适当的化学连接剂诱导的异质结界面处的化学相互作用对于高效、无滞后和稳定的PSCs至关重要。4-咪唑乙酸盐酸盐（ImAcHCl）可以通过酯化反应和静电相互作用充当SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和钙钛矿之间的化学桥梁" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "上引入ImAcHCl还可以提高钙钛矿薄膜的结晶度。ImAcHCl表面改性后的SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-PSC的平均PCE提高到20.22%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "甲酸铵（HCOONH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）用于柔性钙钛矿电子传输层中的预埋添加剂，可以改善柔性基板由于大变形导致的界面残余应力和晶格失配" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "95", "type": "bibr", "rid": "R95", "data": [ { "name": "text", "data": "95" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。HCOONH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "处理后ETL中的电子提取增强，消除了钙钛矿薄膜中的残余应变和微应变松弛，降低了层内的缺陷密度，最终取得了21.9%的认证PCE。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Yang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次使用[BMIM]BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "离子液体来修饰MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基PSCs的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层，实现了19.62%的PCE，超过了当时MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基的平面太阳能电池的最高效率。结果显示，加入[BMIM]BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "不仅降低了TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的功函数（从4.26 eV降至4.01 eV）（" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "a），还增加了电子迁移率。[BMIM]BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "也可诱导SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与钙钛矿之间形成界面偶极层（IDL），降低ETL表面功函数（" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "b），促进电荷转移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于金属氧化物表面存在大量不饱和金属离子，导致表面存在许多氧空位" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "99", "type": "bibr", "rid": "R99", "data": [ { "name": "text", "data": "99" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与金属氧化物表面结合，BMIM" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "与钙钛矿结合，钝化因有机阳离子空位引起的各种缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，[BMIM]BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "也能用来修饰柔性PSCs的ZnO层。修饰后的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿晶粒尺寸增大，柔性器件PCE从8.59%增加到12.1%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "101", "type": "bibr", "rid": "R101", "data": [ { "name": "text", "data": "101" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "（a）加入［BMIM］BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "后钙钛矿界面能级图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-BMIMBF4钙钛矿界面能级图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；不同衬底上钙钛矿薄膜的表面形貌和横截面SEM图像： （c，f）FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/钙钛矿；（d，g）FTO/IL/钙钛矿； （e，f）FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/IL/钙钛矿" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "（a）Interfacial energy level diagram of perovskite after adding ［BMIM］BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Interfacial energy level diagram of SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-BMIMBF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " perovskite" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". Surface morphologies and cross-sectional SEM images of perovskite films on different substrates： （c，f）FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Perovskite. （d，g）FTO/IL/Perovskite. （e，f）FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/IL/Perovskite" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123996&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123998&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123997&type=", "width": "135.03308105", "height": "102.20420837", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Wu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "分别研究了离子液体1-乙基-3-甲基咪唑六氟磷酸盐（[EMIM]PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）在MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基PSCs中作为ETL修饰剂和独立ETL的效果。[EMIM]PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "增加了FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或FTO基板的表面润湿性，促进了钙钛矿薄膜均匀覆盖（" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "c-h）。经[EMIM]PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "设备显示PCE高达19.59%。[EMIM]PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "独立作为ETL的PSCs实现了接近于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-ETL基PSCs的PCE(14.39%)，这表明[EMIM]PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "的电荷传输能力和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "相当。Bi等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "102", "type": "bibr", "rid": "R102", "data": [ { "name": "text", "data": "102" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "成功地利用KPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "修饰了SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/钙钛矿界面。除K" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "从界面扩散到钙钛矿中降低迟滞外，PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "还通过氢键和配位键化学连接起SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和钙钛矿层，改善了界面接触。添加KPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "界面层的器件实现了21.39%的PCE。同时60℃老化960小时后，未封装器件保持了初始PCE的80.1%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "尽管含有赝卤素离子的碱金属盐中的金属阳离子通过许多实验证明了通过掺杂电子传输层或者在电子传输层与钙钛矿界面间进行修饰都可以提高器件稳定以及电学性能，但人们对于赝卤素离子的掺杂效应和器件性能的影响仍有待探索。因此，我们有必要在以后的研究中探究有利于提高器件性能的更多条件。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "6　赝卤素离子对空穴传输层的修饰作用" } ], "level": "1", "id": "s6" } }, { "name": "p", "data": [ { "name": "text", "data": "制备高效的PSCs需要设计优良的HTL。TFSI" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "属于弱路易斯碱，并且具有疏水性。LiTFSI是正置结构（n-i-p）PSCs中常用的HTL层材料Spiro-OMeTAD的p型掺杂剂。并且有研究证实HTL的TFSI" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "可以迁移到钙钛矿晶界处或ETL界面处动态修复缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "103", "type": "bibr", "rid": "R103", "data": [ { "name": "text", "data": "103" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但LiTFSI中吸水性的Li" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "也会扩散到钙钛矿层中导致器件稳定性下降。为了解决这一棘手的难题，实现工业化生产和实际应用，人们尝试了一系列新型含TFSI" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "掺杂剂来取代传统的LiTFSI。Seo等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "选用Zn(TFSI)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "掺杂HTL后发现PSCs的内建电场（" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "a）、复合电阻以及PCE都得到了提高。Bang等人认为Na" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "迁移对PSCs的降解几乎没有影响，他们使用双三氟甲磺酰亚胺钠（NaTFSI）替代LiTFSI作为掺杂剂后制备了器件（" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "b）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，PCE达到了22.4%。Xu等人在Spiro-OMeTAD制备过程中加入AgTFSI，由于Spiro-OMeTAD很容易被氧化成Spiro-OMeTAD" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "。因此通过掺杂AgTFSI来增加电荷载流子密度。同时，电极界面的串联电阻和电荷转移电阻降低。进一步优化AgTFSI掺杂量后器件效率可提高20%，表现出更为优异的稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "（a）使用LiTFSI（开放圆，虚线）和Zn（TFSI）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（闭合圆，实线）作为Spiro-OMeTAD掺杂剂的器件的Mott-Schottky图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （b）具有FTO/d-TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（Li掺杂）/mp-TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/（FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "（MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "/Spiro-OMeTAD（w/LiTFSI和tBP）/Au器件结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）未经处理的和经DMIMPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "处理后的PSCs的J-V曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （d）TBAPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "处理后的SCLC曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （e）由UPS光谱导出的能级示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "（a）Mott-Schottky plots of devices using LiTFSI （open circles， dashed lines） and Zn（TFSI）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " （closed circles， solid lines） as Spiro-OMeTAD dopants" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Schematic diagram of device structure with FTO/d-TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（Li-doped）/mp-TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/（FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "（MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "/Spiro-OMeTAD（w/LiTFSI and tBP）/Au" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）J-V curves of untreated and DMIMPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "-treated PSCs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d）SCLC curve after TBAPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " treatment" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （e）Schematic diagram of energy levels derived from UPS spectra" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37123999&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37124001&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37124000&type=", "width": "127.39418793", "height": "66.03495789", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿与HTL界面间的优化调控对于PSCs在长波长光的利用以及电荷分离方面具有比较积极的意义。因此人们考虑采用一些含赝卤素离子的材料对HTL界面进行修饰，以期望达到改善PSCs性能的目的。有报道采用1，3-二甲基-3-咪唑六氟磷酸盐（DMIMPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）离子液体钝化Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.92" } ] }, { "name": "text", "data": "PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "表面能够降低钙钛矿与空穴传输层之间的能垒" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。研究结果表明，[DMIM]" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "与钙钛矿表面的Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子结合可以有效钝化Pb-I反位缺陷，显著抑制非辐射复合。" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "oc从1.04 V增加到1.11 V，效率得到明显提高。太阳能电池的PCE也从21.09%提高到23.25%（" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "c）。同时，由于疏水DMIMPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "层阻碍了水分的渗透，经DMIMPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "处理后的钙钛矿器件也表现出了长期的稳定性。使用同样含有PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的四丁基铵六氟磷酸盐（TBAPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "）使费米能级（E" }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "）更靠近导带，使钙钛矿薄膜由p型转变为n型半导体（" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "e）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TBAPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "处理后的PSCs极限填充电压显著减少（" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "d），表明TBAPF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "作为钝化剂促进了电荷传输并且抑制了非辐射复合。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "7　基于赝卤素离子电荷传输材料" } ], "level": "1", "id": "s7" } }, { "name": "p", "data": [ { "name": "text", "data": "赝卤素离子基化合物可以充当掺杂剂或者界面改性剂，同时也可以直接作为电荷传输材料用于PSCs。目前大多数PSCs中采用的HTL都是Spiro-OMeTAD，与此同时，人们也开发了一系列新型HTL材料。Ito等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "105", "type": "bibr", "rid": "R105", "data": [ { "name": "text", "data": "105" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "于2014年首次将硫氰酸铜（CuSCN）作为HTL材料，结构为TCO/cp-TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/mp-TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/CuSCN/Au的PSCs获得了4.86%的最佳PCE。Grätzel" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "及其同事采用滴注法制备了形貌良好且致密的CuSCN层，并进一步引入了一层氧化还原石墨烯（rGO）避免Au与SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "直接接触发生电势诱导产生降解。最终CuSCN作为HTL的PSCs稳定PCE提高到了20%以上，经过rGO修饰后具有极好的稳定性（" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "a）。具有类似BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "结构的一些有机材料作为HTL也有不错的效果，Ram B等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将具有类似赝卤素离子BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "基的材料SM09作为HTL材料（图12d），该材料具有稳定性好，空穴转移率高等优点（" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "b），虽然目前的各方面性能低于传统的Spiro-OMeTAD材料，但无疑为空穴传输材料的探索做出了贡献。另外，Wei等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将双三氟甲磺酰亚胺铯（CsTFSI）引入SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "中形成的电荷传输材料制备的器件具有较少的陷阱密度和更好的电导率，并且可以与钙钛矿之间形成匹配的能级排列（" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "c）。电荷传输层材料对PSCs的效率和稳定性有重要影响，众多实验证明了赝卤素离子在电荷填充材料方面独特的潜力，我们应当在未来的工作中多加注意。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "（a）含有和不含有薄层rGO（作为CuSCN和金层之间的间隔层）的基于CuSCN的非封装器件的稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。（b）依赖于电场（E" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "）的空穴迁移率图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。（c）基于CsTFSI-SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的能级图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。（d）基于SM作为HTL的器件结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "（a）Stability of CuSCN-based unpackaged devices with and without thin rGO as a spacer between the CuSCN and gold layers" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）The plot of hole mobility dependent on electric field （E" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c）Energy level diagram based on CsTFSI-SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " electron transport layer" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （d）Schematic diagram of device structure based on SM as HTL" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37124002&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37124004&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=37124003&type=", "width": "96.78878784", "height": "91.53345490", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "8　结 论" } ], "level": "1", "id": "s8" } }, { "name": "p", "data": [ { "name": "text", "data": "综上所述，赝卤素离子在钙钛矿前驱体材料、后处理试剂、电荷传输层界面改性剂等方面得到了大量应用，为改善PSCs的电学性能以及效率和稳定性等方面做出了巨大贡献。BF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，BH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等部分赝卤素离子替代卤化物组成非卤化物钙钛矿可以在不破坏钙钛矿结构的前提下提高PSCs性能及稳定性。但这些由赝卤素离子组成的赝卤素PSCs在实际条件下的应用还有待我们进一步探索。而TFA" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等已经被广泛探究的赝卤素离子需要在后续工作中开发更多配合的阳离子来提高器件的效率，同时还应当着重分析钙钛矿前驱体中赝卤素离子阴离子对结晶动力学、薄膜质量以及器件性能和稳定性的影响。利用含有Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，PF" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "的赝卤素离子材料对钙钛矿薄膜进行后处理已被证明能够减少晶界、增大晶粒尺寸、降低缺陷态密度等方面有一定作用。对钙钛矿薄膜的后处理也被证实可以诱导其结构的重组，这将有利于减少缺陷产生的非辐射复合。采用含赝卤素的化学交联剂钝化界面有利于减少界面传输带来的迟滞，改变晶格失配带来的缺陷影响，对开发无滞后的高效PSCs具有积极意义。将NaTFSI，AgTFSI掺杂到HTL中也有利于增加载流子浓度，提高效率。开发具有新型结构和功能的电荷传输层材料对于实现PSCs结构的优化也是十分必要的。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "我们认为，将Ac" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，HCOO" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，SCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，BF4" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等赝卤素离子引入钙钛矿前驱体溶液或者组分中来制备PSCs是目前应用广泛、效果明显的调控方法。同时这些离子在界面修饰中也具有极大的作用；OCN" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，S" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "，C" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "S" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "S" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等离子与已开发的赝卤素离子具有相似的电子结构或离子半径，是否也具有某些独特的作用还有待探究；已被开发的赝卤素离子也需要进一步的实验工作以期实现钙钛矿电池的商业化发展。开发更为优异的功能化离子来修饰界面将成为未来重要的研究方向，对阴阳离子的协同作用以及界面间的相互作用进行更广泛的研究是很有必要的。相信在未来，具有赝卤素离子的材料定会在提高PSCs的性能以及稳定性方面做出自己独特的贡献。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MIN H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LEE D Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KIM J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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