Study on High Power 970nm Semiconductor Laser With a Tunable Grating External Cavity Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "970nm高功率光栅外腔可调谐半导体激光器研究" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Study on High Power 970nm Semiconductor Laser With a Tunable Grating External Cavity" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "苏", "givenname": "鹏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SU", "givenname": "Peng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "苏鹏（1997-），男，江苏扬州人，硕士研究生，2019年于长春理工大学光电信息学院获得学士学位，主要从事高功率半导体激光器方面的研究。E-mail： 1057330512@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826228&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826230&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826229&type=", "width": "24.83600044", "height": "29.89799881", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "苏鹏" }, { "name": "text", "data": "（1997-），男，江苏扬州人，硕士研究生，2019年于长春理工大学光电信息学院获得学士学位，主要从事高功率半导体激光器方面的研究。E-mail： " }, { "name": "text", "data": "1057330512@qq.com" } ] ] } ], "email": "1057330512@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "高", "givenname": "欣", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GAO", "givenname": "Xin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "悦", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Yue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "赵", "givenname": "仁泽", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Ren-ze", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "伏", "givenname": "丁阳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FU", "givenname": "Ding-yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "薄", "givenname": "报学", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BO", "givenname": "Bao-xue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： bbx@cust.edu.cn", "data": [ { "name": "text", "data": "E-mail： bbx@cust.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "薄报学（1964-），男，河南淇县人，博士，教授，2002年于吉林大学获得博士学位，主要从事高功率半导体激光器技术与应用的研究。E-mail： bbx@cust.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826231&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826233&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826232&type=", "width": "24.87099838", "height": "29.86299896", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "薄报学" }, { "name": "text", "data": "（1964-），男，河南淇县人，博士，教授，2002年于吉林大学获得博士学位，主要从事高功率半导体激光器技术与应用的研究。E-mail： " }, { "name": "text", "data": "bbx@cust.edu.cn" } ] ] } ], "email": "bbx@cust.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "长春理工大学 物理学院 高功率半导体激光国家重点实验室， 吉林 长春　130022", "data": [ { "name": "text", "data": "长春理工大学 物理学院 高功率半导体激光国家重点实验室， 吉林 长春　130022" } ] }, { "lang": "en", "text": "State Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology， Changchun 130022， China", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology， Changchun 130022， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "宽条形半导体激光器广泛应用于激光泵浦、激光加工等领域。针对宽条型半导体激光器输出光谱宽、调谐范围小的问题，采用衍射效率分别为28%和55%的反射式衍射光栅作为反馈元件构建宽条形970nm波长光栅外腔半导体激光器。研究了Littrow结构激光器参数对其性能（调谐范围、功率、阈值电流、线宽）的影响。实验结果表明通过结构优化可得到窄线宽可调谐激光输出，适当的提高温度和使用较高衍射效率的光栅可增加激光器调谐范围，并且较高衍射效率的光栅可降低激光器的阈值电流。基于S偏振入射方式的光栅外腔激光器最大可实现27.87nm的波长调谐范围，光谱线宽压窄至0.2nm，输出功率可达1.11W。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Broad-area stripe semiconductor lasers are widely used in laser pumping， laser processing and other fields. In order to solve the problems of wide output spectrum and small tuning range of Broad-area stripe semiconductor lasers， reflective diffraction gratings with diffraction efficiency of 28% and 55% was used as a feedback element to construct a broad-area 970 nm semiconductor laser with a grating external cavity. The effect of the parameters of semiconductor laser with a grating external cavity in Littrow configuration on its performance （tuning range， power， threshold current， linewidth） was investigated. The experimental results show that the tunable laser output with narrow linewidth can be obtained by optimizing the structure， the tuning range of the outer cavity laser can be increased by increasing the temperature appropriately， and the tuning range of the outer cavity laser can be improved and the threshold current can be reduced by using a grating with higher diffraction efficiency. The maximum wavelength tuning range of semiconductor laser with a grating external cavity based on S-polarization is 27.87nm， the spectral linewidth pressure is narrowed to 0.2nm， and the output power can reach 1.11W." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "半导体激光器" } ], [ { "name": "text", "data": "衍射光栅" } ], [ { "name": "text", "data": "波长调谐" } ], [ { "name": "text", "data": "阈值电流" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "semiconductor laser" } ], [ { "name": "text", "data": "diffraction grating" } ], [ { "name": "text", "data": "wavelength tuning" } ], [ { "name": "text", "data": "threshold current" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器因结构简单、输出功率高、可靠性好等优势受到业界广泛关注并被应用到众多领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但宽条形半导体激光器的激射光谱不稳定、线宽大，难以满足如空间相干激光通信" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、环境气体检测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、光谱分析" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等窄线宽、可调谐应用的要求。为了得到窄线宽、波长稳定、可调谐的半导体激光输出，外腔半导体激光器凭借良好的稳定性、高电光转换效率、成本低等优点受到各方青睐" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "近年来可调谐外腔半导体激光器正朝着窄线宽、宽调谐范围、高输出功率等方向发展。其中Littrow结构外腔激光器作为外腔激光器的一种，因其结构紧凑、损耗较小、输出功率较大、调谐范围较大等特性被研究人员广泛采用。Nyaupane等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了一种蓝光外腔半导体激光器，线宽最小约为10pm，最大调谐范围为3nm。Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了一种用于提取拉曼信号的785nm外腔半导体激光器，得到了6nm的调谐范围，激射线宽为0.06nm。Fang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研制了一种445nm外腔激光器，输出功率为1.52W，调谐范围为2.3nm，线宽为72pm。Ojanen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "开展了对采用Littrow结构的2.6μm半导体激光器的研究，调谐范围达到154nm，输出峰值功率为0.1W。近年来，970nm宽条形激光器的输出功率得到快速提高，但其可调谐外腔研究尚待进一步开展。本文选用970nm宽条形半导体激光器为增益器件，构成Littrow型外腔激光器，实验研究了外腔激光器的结构方式、输出功率、调谐范围、线宽等特性，得到了窄线宽、大功率、宽调谐范围的激光输出。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　Littrow型外腔激光器结构" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　Littrow型外腔激光器原理" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为 Littrow型外腔激光器的基本结构，半导体激光器产生的光束经准直透镜准直后入射到衍射光栅，经光栅衍射，一级衍射光沿原光路返回至激光器有源区，减小了特定波长的光损耗，使其优先达到激射阈值，将激光器工作波长锁定在特定波长，而零级光形成激光输出" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过旋转衍射光栅改变一级衍射角从而改变激射波长，实现波长调谐。 激光波长满足以下光栅方程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826235&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826234&type=", "width": "17.69533348", "height": "2.70933342", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中θ为入射光与光栅法线的夹角，d为光栅常数，λ为激射波长。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "Littrow光栅外腔激光器结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagram of grating external cavity semiconductor lasers in Littrow" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826236&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826238&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826237&type=", "width": "69.99099731", "height": "40.69300079", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　实验装置" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "由于发光区快慢轴尺寸的不对称性，半导体激光器在快、慢轴方向的发散角差距较大，从而对外腔激光器的激射光谱产生影响。为了构建最佳的宽条形半导体激光器外腔结构，我们研究了光栅在不同入射光偏振放置条件下的外腔激光器的输出光谱特性。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "为光栅外腔半导体激光器的两种偏振入射方式的外腔结构示意图。本文中970nm激光器芯片采用InGaAs/GaAs压应变量子阱外延结构，出射光为TE偏振（偏振方向平行于结平面方向），偏振度约为92%。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）为P偏振入射方式—激光器芯片出射光的偏振方向平行于由入射光与衍射光、反射光组成的平面，" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）为S偏振入射方式---激光器芯片出射光的偏振方向垂直于由入射光与衍射光、反射光组成的平面。激光器芯片的发光区宽度为190μm，发射峰值波长约970nm，腔长为5000μm，前腔面反射率约为1%以下，后腔面反射率约为95%。FAC为LIMO公司的快轴准直透镜，焦距为1.5mm，SAC为慢轴准直透镜，焦距为13.5mm。FAC将激光器快轴方向光束发散角由自由出射时的28°（FWHM）压缩至0.015°以内。SAC将激光器慢轴方向光束发散角由自由出射时的8°（FWHM）压缩至0.8°以内。为了压窄线宽和模式选择，保证只有0级和1级衍射光输出，应尽量选择高刻线密度的光栅，因此选择刻线密度1200grooves/mm的反射式刻线光栅。对零级输出光的光谱测量采用Ocean Optics, Inc.公司的HR4000光谱仪，分辨率为0.02nm（FWHM）。输出光的功率测量采用Thorlabs的PM16-401功率计，分辨率为0.001mW。" } ] }, { "name": "figgroup", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "光栅外腔半导体激光器结构示意图。（a）P偏振入射方式结构； （b）S偏振入射方式结构。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Schematic diagram of the structure of grating external cavity semiconductor lasers. （a）P-polarized incident structure. （b）S-polarized incident structure." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F2a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826239&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826241&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826240&type=", "width": "66.25558472", "height": "41.37083817", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F2a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826242&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826244&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826243&type=", "width": "66.36965942", "height": "37.07980347", "fontsize": "" } ] } } ] ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　分析与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "为自由激射的半导体激光器的P-I和光谱特性。25℃条件下激光器的阈值电流约1.1A。注入电流大于1.1A后，此时半导体激光器处于受激辐射，满足谐振条件的模式较多，由于增益谱很宽且比较平缓，增益曲线中心附近纵模损耗差异较小，所以半导体激光器一般为多纵模输出" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R16", "R17" ], "text": "16-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着注入电流的增大，纵模数量增多且激光器的输出功率呈线性上升。当注入电流为2.8A时，输出功率为1.73W。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "25℃自由激射宽条形半导体激光器的P-I特性曲线（a）、光谱特性（b）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "P-I characteristics （a）， spectral characteristics （b） of the free-running broad-area stripe semiconductor laser at 25℃." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826245&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826247&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826246&type=", "width": "141.07064819", "height": "80.37738037", "fontsize": "" } ] } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　外腔激光器的入射偏振选择" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "不同入射偏振的外腔激光器的光谱特性如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。可以看出，P偏振入射方式的外腔激光器的输出光谱较宽，当注入电流为1.5A时，光谱宽度为4.21nm。而S偏振入射方式的外腔激光器的输出光谱图较窄，当注入电流为1.5A时，光谱宽度为0.24nm。造成这两种输出光谱明显差异的原因主要是光栅与半导体激光器的相对位置会影响反馈波长宽度。当光栅如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "(a)放置时，光栅的刻线方向与半导体激光器的快轴平行，波长选择反馈发生在慢轴方向，由于激光器有源区的发光区宽度较大（190μm），Littrow型外腔半导体激光器发光区尺寸造成的反馈波长范围2δλ由2dsinθ=λ微分可得" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826249&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826248&type=", "width": "23.02933502", "height": "2.70933342", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "（式中δθ≈a/f，a表示增益器件激光发射窗口大小的一半，f为慢轴准直透镜的焦距），计算得出反馈波长范围约为19nm。当光栅如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "(b)放置，光栅刻线此时正与激光器的慢轴方向平行，波长选择反馈发生在快轴方向，有源区厚度（1μm）引起的反馈波长范围约为0.1 nm。综上，为了得到窄线宽输出光谱和高输出功率，应采用S偏振入射方式。" } ] }, { "name": "figgroup", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "P偏振入射方式（a）、 S偏振入射方式（b）外腔激光器在不同注入电流条件下的输出光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "P-polarized incident（a）， S-polarized incident（b） external cavity laser output spectra under different injection current conditions" } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F4a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826250&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826252&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826251&type=", "width": "58.19100952", "height": "83.34399414", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F4a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826253&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826255&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826254&type=", "width": "49.98899841", "height": "71.59600067", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826257&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826256&type=", "width": "58.29100800", "height": "162.34197998", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　光栅衍射效率对光栅外腔半导体激光器特性的影响" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "选用衍射效率分别为28%、55%的1200grooves/mm刻线光栅进行了S偏振入射方式的性能测试，结果如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "(a)为激光器自由激射与光栅外腔工作时的P-I特性曲线。光栅外腔工作时，激光器阈值电流由1.1 A分别降至0.75A和 0.69A。由于衍射光栅将一级衍射光反馈回激光器的有源区，相比于自由激射，光栅的衍射提高了光反馈，使得激光器阈值增益下降，也说明了光栅反馈光与激光器之间具有较强的耦合，这与选用了衍射效率较高的衍射光栅和高质量的光束准直有关。与此同时，外腔激光器的阈值电流还与光栅衍射效率有关，由于反馈的增加，衍射效率为55%的光栅外腔激光器具有更低的阈值电流。在阈值电流以上，外腔激光器的输出功率随注入电流的增加而线性增加，注入电流为2.8A 时，衍射效率分别为28%和55%的外腔激光器的输出功率分别为 1.08W 和 0.59W，功率耦合效率分别约为72%和45%。功率下降的主要原因不仅与光栅的一级衍射效率有关，还有经光栅衍射后一级衍射光不能全部反馈回器件的有源区内，造成反馈光损失，并且使用快、慢轴准直透镜进行准直时，也在一定程度上造成部分功率损失。随着电流的增大，两种外腔激光器得到了近似一致的窄线宽输出，谱线宽度约0.2nm。" } ] }, { "name": "figgroup", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同衍射效率光栅外腔激光器的工作特性：（a）P-I；（b）光谱输出特性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Operating characteristics of external cavity diode lasers with different diffraction efficiency gratings： （a） P-I； （b） output spectrum of external cavity semiconductor lasers." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F5a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826258&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826260&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826259&type=", "width": "73.39498901", "height": "56.16200256", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F5a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826261&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826263&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826262&type=", "width": "54.99800110", "height": "78.70500183", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826265&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826264&type=", "width": "73.49498749", "height": "142.26899719", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "实验发现，波长调谐范围随激光器注入电流的变化有明显变化，并与光栅衍射效率密切相关，" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "给出了调谐范围随注入电流的变化关系以及阈值电流随激射波长的变化。从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(a)中可以看出，注入电流为1.1A时两种衍射效率的光栅外腔激光器的调谐范围均达到最大值，分别为26.81nm和30.78nm，此注入电流近似为激光器自由激射时的阈值电流。还可以看出高衍射效率的光栅外腔激光器的调谐范围比低衍射效率的光栅外腔激光器大，其原因是因为光栅的衍射效率越高，外腔反馈光强度越强，更容易实现外腔激射。当激光器注入电流大于自由激射时的阈值电流时，随注入电流的增加，激光器内腔不仅激射模式增强，而且增益模式增多，导致在调谐范围的边缘处内腔激射模式与光栅反馈模式的竞争增强，最终光栅外腔激光器的调谐范围单调递减。当注入电流增大到一定程度，激光输出光谱同时出现内、外腔两个模式，无法获得纯外腔模式的窄线宽输出。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(b)为不同衍射效率的光栅外腔半导体激光器的阈值电流随调谐波长的变化特性。这与激光器的增益谱分布有关。在激光器自由激射的中心波长处增益较大，偏离光谱中心则增益变小，外腔激光器的阈值电流与之相反，离增益中心越远，阈值电流越大。由图所示，衍射效率28%和55%光栅外腔半导体激光器在调谐波长各自为970nm和971.1nm处的阈值电流均最低，分别为0.75A、0.69A。另外，高衍射效率的光栅外腔激光器的阈值电流均低于低衍射效率的，造成这种现象的原因主要是高衍射效率光栅具有较强的外腔反馈强度。由" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "(a)和(b)可知，当注入电流为1.1A时，两种衍射效率的光栅外腔半导体激光器均可得到连续可调谐的窄线宽激光输出。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "给出了不同衍射效率的光栅外腔半导体激光器在1.1A注入电流下的归一化光谱图。衍射效率为28%、55%的光栅外腔激光器的波长调谐范围分别为955.41~982.22nm、954.08~984.86nm，对应的光栅转动角度分别为1.12°和1.3°。因为采用量子阱结构的半导体激光器，具有不对称性的增益谱，在短波方向增益谱有明显展宽。半导体激光器在970nm处自由激射，外腔激光器在长波方向的调谐范围略小于短波方向。" } ] }, { "name": "figgroup", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同衍射效率的光栅外腔激光器的调谐范围及阈值电流特性：（a）波长调谐范围随注入电流的变化；（b）阈值电流随激射波长的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Tuning range and threshold current characteristics of grating external cavity diode Lasers with different diffraction efficiencies. （a） variation of wavelength tuning range with injection current. （b） variation of threshold current with excitation wavelength ." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F6a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826266&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826268&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826267&type=", "width": "62.40527344", "height": "47.75163269", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F6a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826269&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826271&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826270&type=", "width": "69.98455811", "height": "53.55119324", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826273&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826272&type=", "width": "76.19399261", "height": "109.87487030", "fontsize": "" } } }, { "name": "figgroup", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "光栅外腔激光器的归一化光谱：（a）衍射效率28%；（b）衍射效率55%。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Normalized emission spectrums of grating external cavity semiconductor lasers： （a）28% diffraction efficiency； （b）55% diffraction efficiency." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F7a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826274&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826276&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826275&type=", "width": "74.98300171", "height": "57.37899780", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F7a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826277&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826279&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826278&type=", "width": "74.98300171", "height": "57.37899780", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826281&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826280&type=", "width": "75.08300018", "height": "122.15999603", "fontsize": "" } } }, { "name": "figgroup", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同注入电流下光栅外腔激光器的输出功率谱：（a）衍射效率28%； （b）衍射效率55%。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Output power spectrums of grating external cavity semiconductor lasers with different injection currents： （a）28% diffraction efficiency； （b）55% diffraction efficiency." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F8a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826282&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826284&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826283&type=", "width": "77.49583435", "height": "59.30857086", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F8a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826285&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826287&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826286&type=", "width": "77.49583435", "height": "59.30857086", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826289&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826288&type=", "width": "77.69583130", "height": "125.97265625", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "为两种不同衍射效率的光栅外腔半导体激光器的输出功率谱。可以看出，在不同注入电流下，光栅外腔激光器的输出功率谱符合增益谱分布。随着注入电流的增大，低衍射效率光栅的外腔激光器具有较高输出功率，这与外腔激光器的输出损耗（如光栅的吸收等）和零级输出效率相关。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过对比不同衍射效率的光栅外腔激光器的性能，结果表明，低衍射效率的光栅外腔激光器具有更高的输出功率，高衍射效率的光栅外腔激光器则具有更大的波长调谐范围和更低的阈值电流，根据不同性能需求选择合适的光栅。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　光栅外腔半导体激光器的温度特性" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "选用衍射效率28%的衍射光栅，测试了不同温度条件下的光栅外腔半导体激光器的工作特性。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "给出了在不同温度下外腔半导体激光器的P-I曲线和在1.1A时的光谱特性。从" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "(a)可以看出， 在10℃、25℃、35℃条件下外腔激光器的最大功率分别为1.11W、1.10W、1.09W，阈值电流分别为0.71A、0.72A、0.8A。温度升高使得激光器芯片增益降低、阈值电流增加及微分量子效率降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，外腔激光器的功率略有下降。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "(b)为1.1A注入电流下，10℃、25℃、35℃条件下的光栅外腔激光器的输出光谱，其峰值波长均为970nm，光谱线宽分别为0.20nm、0.21nm、0.23nm。尽管光栅外腔激光器的工作波长主要由光栅衍射角选择决定。由于快轴准直封装结构的温度敏感性，可能使得激光器的快轴准直特性随工作温度的增加而略有变差，从而使得光栅外腔激光器的光谱线宽略有增宽。" } ] }, { "name": "figgroup", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "不同温度下光栅外腔半导体激光器的工作特性：（a）P-I特性；（b）激光光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Operating characteristics of grating external cavity diode lasers at different temperatures ： （a） P-I characteristics； （b）output spectrum." } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F9a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826290&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826292&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826291&type=", "width": "66.68235779", "height": "51.03143311", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F9a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826293&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826295&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826294&type=", "width": "48.60807037", "height": "69.57563782", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826297&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826296&type=", "width": "77.69583130", "height": "129.13389587", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "原理上，激光器的增益谱将随工作温度的增加而发生红移，从而导致光栅外腔激光器的调谐范围改变。" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "给出了不同工作温度下光栅外腔半导体激光器的调谐范围及阈值特性。可以看出，光栅外腔激光器的最大调谐范围随工作温度增加而增加，并且其对应的注入电流值也逐渐增加。当工作温度升高时，激光器有源层材料的禁带宽度Eg相应减小，增益波长发生红移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且温度升高使得激光器的增益变小，从而产生图" }, { "name": "xref", "data": { "text": "10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "所示的激光器特性。在分别大于10℃、25℃工作温度对应的外腔激光器阈值电流后，由于随注入电流的增加，半导体激光器的内腔激射模式增强，导致调谐范围边缘处的内腔激射模式与光栅反馈模式的竞争增强，最终光栅外腔激光器的调谐范围呈线性下降。而在35℃工作温度时，注入电流大于阈值电流时，光栅外腔激光器的调谐范围随注入电流的增加先逐渐减少，然后增大，这是由于半导体激光器自身的热效应和能带填充效应影响下，调谐范围向长波方向展宽且有所增加。然后，调谐范围随注入电流的增加而减少同样由内腔激射增强引起。" } ] }, { "name": "figgroup", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "不同温度下光栅外腔激光器的工作特性：（a）调谐范围；（b）阈值变化" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "Operating characteristics of grating external cavity diode lasers at different temperatures： （a）tuning ranges； （b）thresholds currents" } ] } ], "note": [], "layout": "1;2;", "grid": [ [ { "name": "fig", "data": { "id": "F10a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826298&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826300&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826299&type=", "width": "77.10000610", "height": "58.98400879", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F10a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826301&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826303&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826302&type=", "width": "77.10000610", "height": "58.96699524", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826305&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826304&type=", "width": "77.20000458", "height": "125.35300446", "fontsize": "" } } }, { "name": "figgroup", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "不同温度下光栅外腔激光器的归一化光谱：（a） 10℃；（b）25℃；（c）35℃" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "Normalized emission spectrums of grating external cavity semiconductor lasers at different temperatures： （a）10℃； （b）25℃； （c）35℃" } ] } ], "note": [], "layout": "1;2;3;", "grid": [ [ { "name": "fig", "data": { "id": "F11a1", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826306&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826308&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826307&type=", "width": "76.69400024", "height": "58.64900208", "fontsize": "" } ] } } ], [ { "name": "fig", "data": { "id": "F11a2", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826309&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826311&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826310&type=", "width": "76.69400024", "height": "58.64900208", "fontsize": "" } ] } } ], [ { "name": "fig", "data": { "id": "F11a3", "caption": [ { "lang": "zh", "title": [] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826312&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826314&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826313&type=", "width": "76.69400024", "height": "58.64900208", "fontsize": "" } ] } } ] ], "alternatives": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826316&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36826315&type=", "width": "76.79399872", "height": "187.05000305", "fontsize": "" } } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结 论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "实验使用衍射效率分别为28%和55%的反射式衍射光栅作为反馈元件构建了宽条形970nm波长光栅外腔半导体激光器。通过调节激光器与光栅的相对位置改变光栅外腔激光器的入射偏振选择，P偏振入射方式的外腔激光器由于发光窗口宽，输出光谱较宽，而采用S偏振入射方式的外腔激光器可得到窄线宽可调谐激光输出。分析了不同衍射效率和不同温度对S偏振入射方式的光栅外腔激光器性能参数的影响。实验结果表明，适当的升高温度可以增加外腔激光器的调谐范围，使用较高衍射效率的光栅可提高外腔激光器的调谐范围并且降低其阈值电流。基于S偏振入射方式的光栅外腔激光器结构和激光器不同的工作温度调控，实现了27.87nm的波长调谐范围，光谱线宽压窄至0.2nm，激光器输出功率达1.11W。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "陈良惠" }, { "name": "text", "data": "，" }, { "name": "text", "data": "杨国文" }, { "name": "text", "data": "，" }, { "name": "text", "data": "刘育衔" }, { "name": "text", "data": ". " }, { "name": "text", "data": "半导体激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "05" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "13" }, { "name": "text", "data": "-" }, { "name": "text", "data": "31" }, { "name": "text", "data": "." } ], "title": "半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "CHEN L H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YANG G W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LIU Y X" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development of semiconductor lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lasers." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "05" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "13" }, { "name": "text", "data": "-" }, { "name": "text", "data": "31" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Development of semiconductor lasers" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王立军" }, { "name": "text", "data": "，" }, { "name": "text", "data": "宁永强" }, { "name": "text", "data": "，" }, { "name": "text", "data": "秦莉" }, { "name": "text", "data": "，" }, { "name": "text", "data": "佟存柱" }, { "name": "text", "data": "，" }, { "name": "text", "data": "陈泳屹" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率半导体激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "，" }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "01" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": "." } ], "title": "大功率半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "WANG L J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "NING Y Q" }, { "name": "text", "data": "，" }, { "name": "text", "data": "QIN L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development of high power diode laser" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "，" }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "01" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Development of high power diode laser" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "刘国军" }, { "name": "text", "data": "，" }, { "name": "text", "data": "薄报学" }, { "name": "text", "data": "，" }, { "name": "text", "data": "曲轶" }, { "name": "text", "data": "，" }, { "name": "text", "data": "辛德胜" }, { "name": "text", "data": "，" }, { "name": "text", "data": "姜会林" }, { "name": "text", "data": ". " }, { "name": "text", "data": "高功率半导体激光器技术发展与研究" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "红外与激光工程" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "（" }, { "name": "text", "data": "S1" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "4" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3969/j.issn.1007-2276.2007.z1.078" } ], "href": "http://dx.doi.org/10.3969/j.issn.1007-2276.2007.z1.078" } } ], "title": "高功率半导体激光器技术发展与研究" }, { "lang": "en", "text": [ { "name": "text", "data": "LIU G J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BO B X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "QU Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High power semiconductor lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Infrared Laser Eng." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "（" }, { "name": "text", "data": "S1" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "4" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3969/j.issn.1007-2276.2007.z1.078" } ], "href": "http://dx.doi.org/10.3969/j.issn.1007-2276.2007.z1.078" } } ], "title": "High power semiconductor lasers" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王狮凌" }, { "name": "text", "data": "，" }, { "name": "text", "data": "房丰洲" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率激光器及其发展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "激光与光电子学进展" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "，" }, { "name": "text", "data": "54" }, { "name": "text", "data": "（" }, { "name": "text", "data": "09" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "51" }, { "name": "text", "data": "-" }, { "name": "text", "data": "64" }, { "name": "text", "data": "." } ], "title": "大功率激光器及其发展" }, { "lang": "en", "text": [ { "name": "text", "data": "WANG S L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "FANG F Z" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High power laser and its development" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Laser Optoelectr. Prog." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "，" }, { "name": "text", "data": "54" }, { "name": "text", "data": "（" }, { "name": "text", "data": "09" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "51" }, { "name": "text", "data": "-" }, { "name": "text", "data": "64" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "High power laser and its development" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Mukhtar S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Xiaobin S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Ashry I" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Tunable violet laser diode system for optical wireless communication" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE Photonics Technology Letters" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "32" }, { "name": "text", "data": "（" }, { "name": "text", "data": "9" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "546" }, { "name": "text", "data": "-" }, { "name": "text", "data": "549" }, { "name": "text", "data": "." } ], "title": "Tunable violet laser diode system for optical wireless communication" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Gasmi K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Aljalal A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Al-Basheer W" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Blue external-cavity diode laser for NO 2 gas detection" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Semiconductor Lasers and Laser Dynamics IX" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "11356" }, { "name": "text", "data": "： " }, { "name": "text", "data": "1135616" }, { "name": "text", "data": "." } ], "title": "Blue external-cavity diode laser for NO 2 gas detection" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Yang Q F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Shen B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Wang H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Vernier spectrometer using counterpropagating soliton microcombs" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Science" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "363" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6430" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "965" }, { "name": "text", "data": "-" }, { "name": "text", "data": "968" }, { "name": "text", "data": "." } ], "title": "Vernier spectrometer using counterpropagating soliton microcombs" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李斌" }, { "name": "text", "data": "，" }, { "name": "text", "data": "高俊" }, { "name": "text", "data": "，" }, { "name": "text", "data": "赵俊" }, { "name": "text", "data": "，" }, { "name": "text", "data": "余安澜" }, { "name": "text", "data": "，" }, { "name": "text", "data": "王新兵" }, { "name": "text", "data": "，" }, { "name": "text", "data": "左都罗" }, { "name": "text", "data": ". " }, { "name": "text", "data": "宽调谐范围光栅外腔窄线宽405nm蓝紫光半导体激光器研究" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "，" }, { "name": "text", "data": "42" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "24" }, { "name": "text", "data": "-" }, { "name": "text", "data": "30" }, { "name": "text", "data": "." } ], "title": "宽调谐范围光栅外腔窄线宽405nm蓝紫光半导体激光器研究" }, { "lang": "en", "text": [ { "name": "text", "data": "LI B" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GAO J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHAO J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Study on broad tuning range and narrow line-width 405 nm blue-violet diode laser with grating external cavity" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lasers." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "，" }, { "name": "text", "data": "42" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "24" }, { "name": "text", "data": "-" }, { "name": "text", "data": "30" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Study on broad tuning range and narrow line-width 405 nm blue-violet diode laser with grating external cavity" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Nyaupane P R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Likamwa P L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Braiman Y" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Spectral linewidth narrowing of two broad-area blue laser diodes （445 nm） with a common external cavity" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Optics Letters" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "， " }, { "name": "text", "data": "46" }, { "name": "text", "data": "（" }, { "name": "text", "data": "11" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2718" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2721" }, { "name": "text", "data": "." } ], "title": "Spectral linewidth narrowing of two broad-area blue laser diodes （445 nm） with a common external cavity" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Wang F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Lv X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Liu G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "785 nm grating-coupled external-cavity laser for shifted-excitation Raman difference spectroscopy" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Journal of Optical Technology" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "84" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "89" }, { "name": "text", "data": "-" }, { "name": "text", "data": "94" }, { "name": "text", "data": "." } ], "title": "785 nm grating-coupled external-cavity laser for shifted-excitation Raman difference spectroscopy" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Fang X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Wang P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Song Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-power external cavity diode laser with narrow linewidth emission and adjustable polarization state at 445 nm" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Optical Engineering" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "61" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "046103" }, { "name": "text", "data": "." } ], "title": "High-power external cavity diode laser with narrow linewidth emission and adjustable polarization state at 445 nm" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Ojanen S P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Viheriälä J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Cherchi M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Applied Physics Letters" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "116" }, { "name": "text", "data": "（" }, { "name": "text", "data": "8" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "081105" }, { "name": "text", "data": "." } ], "title": "GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "花金平" }, { "name": "text", "data": "，" }, { "name": "text", "data": "江毅" }, { "name": "text", "data": "." }, { "name": "text", "data": "可调谐外腔半导体激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "半导体光电" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "，" }, { "name": "text", "data": "42" }, { "name": "text", "data": "（" }, { "name": "text", "data": "01" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "11" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19+56" }, { "name": "text", "data": "." } ], "title": "可调谐外腔半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "HUA J P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "JIANG Y" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent progresses of tunable external cavity diode laser" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Semi. Opt." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "，" }, { "name": "text", "data": "42" }, { "name": "text", "data": "（" }, { "name": "text", "data": "01" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "11" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19+56" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Recent progresses of tunable external cavity diode laser" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Labachelerie M D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Passedat G" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Mode-hop suppression of Littrow grating-tuned lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Applied Optics" }, { "name": "text", "data": "， " }, { "name": "text", "data": "1993" }, { "name": "text", "data": "， " }, { "name": "text", "data": "32" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "269" }, { "name": "text", "data": "-" }, { "name": "text", "data": "274" }, { "name": "text", "data": "." } ], "title": "Mode-hop suppression of Littrow grating-tuned lasers" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "Myatt C J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "Harvey K C" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Eternal-cavity diode laser using a grazing-incidence diffraction grating" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Optics Letters" }, { "name": "text", "data": "， " }, { "name": "text", "data": "1991" }, { "name": "text", "data": "， " }, { "name": "text", "data": "16" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "910" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2" }, { "name": "text", "data": "." } ], "title": "Eternal-cavity diode laser using a grazing-incidence diffraction grating" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "雷平顺" }, { "name": "text", "data": ". " }, { "name": "text", "data": "光栅外腔半导体激光器的输出特性研究" }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "长春" }, { "name": "text", "data": "：" }, { "name": "text", "data": "长春理工大学" }, { "name": "text", "data": "，" }, { "name": "text", "data": "2011" }, { "name": "text", "data": "." } ], "title": "光栅外腔半导体激光器的输出特性研究" }, { "lang": "en", "text": [ { "name": "text", "data": "LEI P X" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Study on the Output Characteristics of Grating External-Cavity Semiconductor Lasers" }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "Changchun" }, { "name": "text", "data": "： " }, { "name": "text", "data": "Changchun University of Science and Technology" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Study on the Output Characteristics of Grating External-Cavity Semiconductor Lasers" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "丁鼎" }, { "name": "text", "data": ". " }, { "name": "text", "data": "蓝光大功率GaN基光栅外腔可调谐激光器研" }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "厦门" }, { "name": "text", "data": "：" }, { "name": "text", "data": "厦门大学" }, { "name": "text", "data": "，" }, { "name": "text", "data": "2018" }, { "name": "text", "data": "." } ], "title": "蓝光大功率GaN基光栅外腔可调谐激光器研" }, { "lang": "en", "text": [ { "name": "text", "data": "DING D" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Study of Blue high-power GaN-based Grating-coupled External Cavity Tunable Laser" }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "Xiamen" }, { "name": "text", "data": "： " }, { "name": "text", "data": "Xiamen University" }, { "name": "text", "data": "，" }, { "name": "text", "data": "2018" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Study of Blue high-power GaN-based Grating-coupled External Cavity Tunable Laser" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "曾华林" }, { "name": "text", "data": "，" }, { "name": "text", "data": "江鹏飞" }, { "name": "text", "data": "，" }, { "name": "text", "data": "谢福增" }, { "name": "text", "data": "." }, { "name": "text", "data": "半导体激光器温度控制研究" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "激光与红外" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2004" }, { "name": "text", "data": "（" }, { "name": "text", "data": "05" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "339" }, { "name": "text", "data": "-" }, { "name": "text", "data": "340+346" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3969/j.issn.1001-5078.2004.05.005" } ], "href": "http://dx.doi.org/10.3969/j.issn.1001-5078.2004.05.005" } } ], "title": "半导体激光器温度控制研究" }, { "lang": "en", "text": [ { "name": "text", "data": "Zeng H L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JIANG P F" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIE F Z" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Temperature control of semiconductor laser for Interferometer" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Laser infra." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2004" }, { "name": "text", "data": "（" }, { "name": "text", "data": "05" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "339" }, { "name": "text", "data": "-" }, { "name": "text", "data": "340+346" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3969/j.issn.1001-5078.2004.05.005" } ], "href": "http://dx.doi.org/10.3969/j.issn.1001-5078.2004.05.005" } } ], "title": "Temperature control of semiconductor laser for Interferometer" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "赵碧瑶" }, { "name": "text", "data": "，" }, { "name": "text", "data": "井红旗" }, { "name": "text", "data": "，" }, { "name": "text", "data": "仲莉" }, { "name": "text", "data": "，" }, { "name": "text", "data": "曼玉选" }, { "name": "text", "data": "，" }, { "name": "text", "data": "班雪峰" }, { "name": "text", "data": "，" }, { "name": "text", "data": "刘素平" }, { "name": "text", "data": "，" }, { "name": "text", "data": "马骁宇" }, { "name": "text", "data": ". " }, { "name": "text", "data": "半导体激光器边缘绝热封装改善慢轴光束质量" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "01" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "186" }, { "name": "text", "data": "-" }, { "name": "text", "data": "196" }, { "name": "text", "data": "." } ], "title": "半导体激光器边缘绝热封装改善慢轴光束质量" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHAO B Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "JING H Q" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHONG L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Improving slow-axis laser beam quality of semiconducter laser with edge adiabatic package" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lasers." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "01" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "186" }, { "name": "text", "data": "-" }, { "name": "text", "data": "196" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Improving slow-axis laser beam quality of semiconducter laser with edge adiabatic package" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220354", "clc": [ [ { "name": "text", "data": "TN248.4" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032（XXXX）XX-0001-09", "citeme": [ { "data": [ { "name": "text", "data": "苏鹏,高欣,张悦等.970nm高功率光栅外腔可调谐半导体激光器研究[J].发光学报,DOI:10.37188/CJL.20220354" } ], "text": "苏鹏,高欣,张悦等.970nm高功率光栅外腔可调谐半导体激光器研究[J].发光学报,DOI:10.37188/CJL.20220354" }, { "data": [ { "name": "text", "data": "SU Peng,GAO Xin,ZHANG Yue,et al.Study on High Power 970nm Semiconductor Laser With a Tunable Grating External Cavity[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220354" } ], "text": "SU Peng,GAO Xin,ZHANG Yue,et al.Study on High Power 970nm Semiconductor Laser With a Tunable Grating External Cavity[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220354" } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（No.61774024）；吉林省科技发展计划（20190302007GX， 20200501008GS）资助项目" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China（61774024）； Science and Technology Development Plan of Jilin Province（20190302007GX， 20200501008GS）" } ] } ], "history": { "epub": "2022-11-16", "opub": "2022-11-16" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "originalSource": [] }