Effects of Interface Regulation on the Performances of Flexible Quantum Dot Electroluminescent Devices Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "界面调控对柔性量子点电致发光器件性能的影响" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Effects of Interface Regulation on the Performances of Flexible Quantum Dot Electroluminescent Devices" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "刘", "givenname": "萍", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Ping", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "刘萍 (1996-)，女，山东烟台人，物理学硕士研究生在读，致力于柔性无镉量子点电致发光器件的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776447&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776449&type=", "big": 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[ { "lang": "zh", "text": [ "邓振波 (1959-)，男，山东单县人，博士，教授，博士研究生导师，1994年于中科院长春物理所获得博士学位，主要从事光电材料及薄膜电致发光器件研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776453&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776455&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776454&type=", "width": "15.15483856", "height": "21.09643555", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "邓振波" }, { "name": "text", "data": " (1959-)，男，山东单县人，博士，教授，博士研究生导师，1994年于中科院长春物理所获得博士学位，主要从事光电材料及薄膜电致发光器件研究。" } ] ] } ], "email": "zbdeng@bjtu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "唐", "givenname": "爱伟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TANG", "givenname": "Ai-wei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "北京交通大学 物理科学与工程学院， 北京　100044", "data": [ { "name": "text", "data": "北京交通大学 物理科学与工程学院， 北京　100044" } ] }, { "lang": "en", "label": "1", "text": "Beijing Jiaotong University， School of Physical Science and Engineering， Beijing， 100044", "data": [ { "name": "text", "data": "Beijing Jiaotong University， School of Physical Science and Engineering， Beijing， 100044" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "北京理工大学 深圳研究院， 深圳 518507", "data": [ { "name": "text", "data": "北京理工大学 深圳研究院， 深圳 518507" } ] }, { "lang": "en", "label": "2", "text": "Beijing Institute of Technology， Shenzhen Research Institute， Shenzhen， 518507", "data": [ { "name": "text", "data": "Beijing Institute of Technology， Shenzhen Research Institute， Shenzhen， 518507" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "近年来，柔性显示技术引起了人们的广泛关注，尤其在折叠手机、可穿戴电子等领域，柔性显示屏幕更是不可或缺。量子点电致发光二极管（QLEDs，Quantum Dot Light Emitting Diodes）因具有高色纯度、高效率、高稳定性等特点而在柔性显示领域展现了独特的优势。本文首先介绍了柔性量子点发光二极管（flex-QLEDs）及其近期发展，然后讨论了器件结构及界面调控对发光性能的影响。在多层异质结构的flex-QLEDs的基础上，本文总结了三种界面调控方法：阳极界面调控、阴极界面调控、发光层调控。调控聚焦于降低表面粗糙度，增强界面结合力，优化各层能级。最后，对目前flex-QLEDs的性能进行了比较与总结，并对未来所面临的挑战和机遇进行了展望。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In recent years， flexible display technologies have attracted widespread attention in the field of folding mobile phones and wearable electronics. Especially， flexible displays are indispensable in these flexible electronics. Among them， quantum dot electroluminescent diodes （QLEDs） have great advantages due to their high color purity， high efficiency and good stability. In this paper， we first give a brief introduction of flexible QLEDs （flex-QLEDs） and summarize the recent development of flex-QLEDs. Then we discussed the device structure and the interface regulation of flex-QLEDs. For flex-QLEDs with multilayer heterostructures， the strategies are categorized into three： anode interface regulation， cathode interface regulation， and light-emitting layer regulation. The regulation focuses on reducing the surface roughness， enhancing the interfacial force， and optimizing the energy level. Finally， the performances of advanced flex-QLEDs are compared and summarized， and the future challenges and opportunities are prospected." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "界面调控" } ], [ { "name": "text", "data": "柔性器件" } ], [ { "name": "text", "data": "电致发光" } ], [ { "name": "text", "data": "量子点" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "interface regulation" } ], [ { "name": "text", "data": "flexible devices" } ], [ { "name": "text", "data": "electroluminescence" } ], [ { "name": "text", "data": "quantum dots" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "在可穿戴电子产品需求的持续增长下，由柔性量子点发光二极管（Flexible quantum dot light-emitting diodes, flex‑QLEDs）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、柔性有机发光二极管（Flexible organic light-emitting diodes, flex-OLEDs）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R2", "R3", "R4" ], "text": "2-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和柔性钙钛矿发光二极管（Flexible perovskite light-emitting diodes, flex-PeLEDs）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "三大主力组成的柔性显示器因超薄轻质、可随意弯曲和可实现低成本大规模制备等优点而备受关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。1992年，Heeger等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次在聚对苯二甲酸乙二醇酯（Polyethylene terephthalate, PET）衬底上制备了flex-OLEDs，自此，显示领域迎来了一个全新的时代。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "相比flex-OLEDs，flex-QLEDs因具有高色纯度、高稳定性、长寿命等优点而备受关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但其也存在以下缺点：第一，柔性电极易脱落、且表面粗糙度较大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；第二，制备过程中，甲苯、氯苯等溶剂的冲洗易破坏柔性衬底；第三，高温退火工艺使flex-QLEDs性能受损" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；第四，功能层间粘附力不足会导致界面滑移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些问题制约了flex-QLEDs在可穿戴显示领域的广泛应用。针对以上问题，本文综述了界面调控在提高器件性能方面的工作。首先介绍了flex-QLEDs的发展史和典型的器件结构，并在此基础上讨论界面调控对制备高性能flex-QLEDs的影响，从阳极界面、阴极界面、发光层三个方面对器件的界面优化进行总结，最后，展望了该领域的未来发展。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　柔性量子点发光二极管" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　发展历程" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "Flex-QLEDs的代表性工作总结如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "。2009年，Xu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用传统旋涂工艺在PET/ITO（Polyethylene terephthalate/Indium Tin Oxides）上，制备出首个flex-QLEDs，这为提高柔性可穿戴显示器件的色纯度带来了突破方向。但传统旋涂工艺无法进行大面积制膜，难以实现图案化和全彩显示的目标，制约了flex-QLEDs的应用。直到2011年，Kim等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用无溶剂转印技术制备了大面积全彩色的flex-QLEDs，与旋涂工艺相比，印刷工艺制备的发光层（Emission layer, EML）交联后无裂纹产生，使flex-QLEDs的电流密度降低了两个数量级，提高了发光效率。进一步地，2014年，Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用电流体动力学雾化（Electrohydrodynamic atomization, EHDA）喷涂工艺制备了以聚（2-甲氧基，5（2'-乙基己氧基）-1,4-苯撑乙烯撑）（Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], MEH-PPV）作电子传输层（Electron transport layer, ETL），CdSe/ZnS量子点（Quantum dots, QDs）作EML的flex-QLEDs。虽然EHDA技术经济、可应用大面积制备，但存在制备的薄膜不均匀、各功能层材料受限制等问题。为进一步简化制备工艺，2018年，Li等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用全溶液法制备了基于AgNWs（Ag nanowires）阴极的flex-QLEDs。为解决薄膜制备过程中由于溶剂表现张力而导致的“咖啡环”现象，2021年，Ren等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用离心铸造法制备了表面更平整的flex-QLEDs。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "柔性量子点发光二极管的发展历程" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Brief timeline of the development of flex-QLEDs" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776456&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776458&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776457&type=", "width": "149.98300171", "height": "74.73600006", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "简化制备工艺为flex-QLEDs的深入研究提供了便利，研究过程中人们发现，制备高性能flex-QLEDs的关键在于解决柔性电极和多层异质结构的界面调控问题。目前常用的柔性透明电极材料是是有近一半的光损失的PET/ITO电极，但是PET与ITO电极的热膨胀系数相反，达到一定温度后，二者一个收缩一个膨胀，电极脱落而且电极与功能层界面有效接触面积减少，限制了flex-QLEDs的抗弯曲能力。为了解决这一问题，人们开发了多种替代材料。2014年，Demir等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在耐高温的PI（polyimide）/Al电极上制备了三原色（RGB, Red, Green, Blue）的flex-QLEDs，与基于PET/ITO制备的相同器件结构的flex-QLEDs相比，基于PI/Al制备的flex-QLEDs避免了柔性电极的高温易脱落问题，亮度（Luminance, " }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "）和外量子效率（External quantum efficiency, EQE）都有所提升，器件的抗弯曲性能也提升明显，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "和EQE分别为20000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和4.03%。2016年，Hu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于一维银纳米线（AgNWs）制备了精细图案的flex-QLEDs，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "和EQE显著提高。2017年，Ji等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "构筑了具有良好柔韧性和高透光率的PET/ITO/Ag/ITO的阴极，并基于此电极材料制备了高性能的RGB flex-QLEDs，器件的电流效率（Current efficiency, CE）分别为16.3 cd/A、86.5 cd/A、16.1 cd/A，这标志着flex-QLEDs在CE上有了很大的突破。2018年，Kang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了AgNWs复合结构透明电极，并在此基础上构筑了flex-QLEDs。2021年，Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在PEN（Polyethylene naphthalenediate）衬底上沉积双层石墨烯作为阳极，并结合Al/AgNWs的阴极结构制备了flex-QLEDs，器件在弯曲1000次后性能仍保持稳定。2022年，Liu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "探究了弯折对传统PET/ITO电学性能产生的影响，再次强调抗机械变形的电极对制备高性能flex-QLEDs的重要性。在此基础上，Lee等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在PET衬底上引入聚合物SU-8作平坦层并沉积电极，制备了复合电极MoO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Ag/MoO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "，复合电极和平坦层的协同作用，提高了电极的透光率，使器件的CE达到30.3 cd/A，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "超过7104 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　界面调控" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "Flex-QLEDs具有与OLEDs相似的多层异质结构，包括阳极、空穴传输层（Hole tranport layer, HTL）、EML、ETL、阴极，其传统（正型）器件结构图和能级图，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）~（b）所示。构筑这种多层异质结构可以有效提高flex-QLEDs的器件性能。然而多层异质结构存在更多的界面问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如功能层间相互渗透引起的黏弹性效应和隔层断裂效应；各层材料的本征物化性质，尤其是力学性质（如弹性模量、热膨胀系数）之间的差异致使柔性器件界面易出现滑移、脱层及破裂等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过高效的改性策略实现牢固的界面材料结合是解决此问题的有效途径。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）Flex-QLEDs正型结构示意图。（b）Flex-QLEDs的能级示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a） Schematic structure of conventional flex-QLEDs. （b） Schematic energy band diagram of flex-QLEDs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776459&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776461&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776460&type=", "width": "96.73800659", "height": "31.34059334", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "基于电致发光器件的结构，本文将功能层界面分为阳极界面、阴极界面、发光层界面三类。其中，电极/功能层界面是决定flex-QLEDs性能好坏的基础条件，它控制载流子注入/传输能否达到平衡状态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时EML的界面问题会增加激子的非辐射复合、降低发光稳定性和机械稳定性，故解决EML界面问题是提高柔性器件光电性能和抗弯曲性能的关键" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。下面针对flex-QLEDs的界面调控，按照正型器件的制备顺序，进行分类和详细讨论。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　阳极界面" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "相比刚性ITO电极，柔性ITO电极有一定的可弯曲性，但其表面粗糙度更大，这导致其在制备过程中无法形成稳固的ITO/HTL界面，最终减少电荷注入界面的有效面积" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，限制了flex-QLEDs光电性能的提升。虽然市场上已发展出一些可替代ITO的新型电极" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } } ], "rid": [ "R27", "R28" ], "text": "27-28", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但这些新型电极的材料性能尚不稳定，未商业化应用。因此本文基于传统商用ITO电极，探讨阳极界面调控对器件的影响。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　表面处理" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "柔性电极表面常用的处理手段有等离子体处理和紫外臭氧处理，它们均能改善电极与功能层间的界面接触，平衡载流子注入和传输，提高器件性能。其中，等离子体处理是通过辉光放电激活气体，产生轰击薄膜表面的离子，实现薄膜表面改性。对柔性ITO最常采用氧等离子体处理，有两方面的功效：1）清除ITO表面吸附的有机污染物，增大表面极性度，降低与溶液的接触角" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，提高表面亲水性，使功能层更均匀，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）；2）提高ITO的功函数，降低空穴注入势垒，利于载流子注入。除此之外，CHF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "等离子体也可用于处理ITO表面，聚集的氟离子形成界面偶极层，促进载流子注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。紫外臭氧处理是通过低压紫外汞灯发射出两种不同波长（185和254 nm）的紫外光，产生臭氧（O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）和活性氧原子（O），O与有机物分子可发生氧化反应，生成挥发性气体（如CO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，NO等），从而清除表面有机污染物；同时，光子能量在打破物体表层化学键时产生的H和C可与O生成强极性基团，使表面更具粘合力和键合特性，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。值得注意的是，柔性电极的清洗时间和表面处理时间都不宜过长。这是由于ITO电极与柔性衬底间存在较差的粘附力，这可能会导致ITO从柔性衬底上脱落、电极与有机物功能层的界面接触变差等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而增加器件内阻。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "两种阳极表面处理方法的示意图。（a）等离子体处理过程。（b）紫外臭氧处理过程。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Schematic illustration for two surface treatment methods of anodes. （a） Process of plasma treatment. （b） Illustration of ultraviolet ozone treatment." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776462&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776464&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776463&type=", "width": "77.69583130", "height": "52.27304077", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　空穴注入层" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "虽然表面处理能增加ITO的功函数，但阳极/HTL间仍存在较大的空穴注入势垒，而且HTL材料的载流子传输速率较慢，与ETL材料的载流子传输速率相差了1~2个数量级，如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "，这使得载流子注入不平衡。因此需要在阳极表面引入空穴注入层（Hole injection layer, HIL），从而形成阶梯势垒，提高空穴传输能力。目前最常用的HIL材料是PEDOT:PSS（Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)）和过渡金属氧化物。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "电子和空穴传输层材料的能级参数和迁移率" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Energy level parameters and mobility of electron and hole transport layer materials" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "材料" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "迁移率" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "LUMO/HOMO（eV）" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "（电子）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.2/7.4" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "ZnO （电子）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.4/7.7" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "（电子）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "3.0/5.7" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "TFB （空穴）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.0*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.3/5.3" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "PVK （空穴）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.5*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.2/5.8" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "Poly-TPD （空穴）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.0*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.3/5.3" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "TPD （空穴）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.1*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.4/5.5" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "TCTA （空穴）" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.0*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.4/5.7" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "CBP （空穴）" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "1.0*10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "3.0/6.1" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776466&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776465&type=", "width": "77.69583130", "height": "52.11344910", "fontsize": "" } } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2.1　PEDOT：PSS" } ], "level": "3", "id": "s3b1" } }, { "name": "p", "data": [ { "name": "text", "data": "正型与倒置结构的flex-QLEDs之间的主要区别在于ITO电极由注入空穴（正型）转变为注入电子（反型），同时金属电极由注入电子（正型）转变为注入空穴（反型）。PEDOT:PSS是一种高导电性聚合物，其在正型、反型器件中扮演着不同角色，其在正型器件中作为HIL修饰阳极/HTL界面，而在反型器件中作为改性层降低电子传输层表面粗糙度。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1）　正型器件" } ], "level": "4", "id": "s3b1a" } }, { "name": "p", "data": [ { "name": "text", "data": "在正型器件中，PEDOT:PSS的主要作用在于形成阶梯势垒，促进空穴传输，并降低阳极表面粗糙度。2021年，Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在PEN/GO阳极与作为HTL的聚（9-乙烯基咔唑）（Poly(9-vinylcarbazole), PVK）间引入PEDOT:PSS（HIL）制备了flex-QLEDs，结果证明在阳极/HTL界面间引入界面修饰层可以形成阶梯势垒，提高激子复合几率，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "达到14330 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，CE为20.77 cd/A。2022年，Liu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "同样在电极/HTL间引入PEDOT:PSS制备了flex-QLEDs。在该器件中，PEDOT:PSS发挥了两个作用：1）其能级为4.9～5.1 eV，介于ITO和TFB的HOMO（Highest occupied molecular orbital）能级之间，形成阶梯势垒，提高了空穴注入效率；2）降低柔性ITO电极的表面粗糙度，减少因局部电流过大导致的器件短路问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然PEDOT:PSS作HIL能提高器件性能，但PSS链的酸性和吸湿性会引起电导率下降、衬底腐蚀等问题，所以需要减少成膜后PSS的含量。处理方式可分为溶剂处理（掺杂有机成分）和薄膜后处理（引入极性有机化合物或采用退火等手段）两大类。如掺杂二甲基亚砜（Dimethylsulfoxide, DMSO）和聚乙二醇辛基苯基醚（Triton X-100）的PEDOT:PSS溶剂处理法，二者的协同效应不仅使PSS链从卷曲的PEDOT:PSS配合物中解缠，导致PEDOT:PSS发生相分离，还能诱导PEDOT链的构象由卷曲变为纳米纤维状，提高了抗弯曲性能，而且使成膜更均匀" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。薄膜后处理法如用十二烷基苯磺酸（Dodecylbenzenesulfonylazide, DBSA）处理PEDOT:PSS薄膜，DBSA分离出的H" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "与PEDOT:PSS中的PSS结合生成链段为电中性的PSSH，致使PSSH与PEDOT间库伦兹力消失，二者发生相分离。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2）　反型器件" } ], "level": "4", "id": "s3b1b" } }, { "name": "p", "data": [ { "name": "text", "data": "在反型flex-QLEDs中，PEDOT:PSS的引入能降低ZnO表面粗糙度，利于成膜。弯曲条件下发光稳定性是评价flex-QLEDs性能的关键指标，早期研究中，器件的弯曲稳定性主要取决于衬底电极和顶部金属电极的性能。2022年，Ji等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了复合电极PET/ITO/Ag/ITO，并在此基础上构建了反型结构的flex-QLEDs，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）。但PET表面粗糙度较大，致使载流子在传输过程中被缺陷捕获，非辐射复合几率增加。为解决此问题，Ji等引入改性层PEDOT:PSS，以此减少ZnO的表面粗糙度（Root mean square deviation，1.71 nm~1.10 nm），如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）~（c），抑制由缺陷引起的非辐射复合，降低对内量子效率和功率衰退的影响；同时，还能增加复合电极和功能层的粘合，进一步提高铝膜在HIL上的附着力，提高器件整体的弹性模量，改善器件弯曲性能。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "反型flex-QLEDs。（a）反型flex-QLEDs的器件结构示意图，（b）ZnO层表面的AFM图像，（c）PEDOT：PSS/ZnO层表面的AFM图像" }, { "name": "sup", "data": [ { "name": "text", "data": " ［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Inverted flex-QLEDs. Schematic structure of inverted flex-QLEDs （a）， AFM images of ZnO （b）， AFM images of PEDOT：PSS/ZnO （c）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776467&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776469&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776468&type=", "width": "146.19099426", "height": "49.31800079", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2.2　过渡金属氧化物" } ], "level": "3", "id": "s3b2" } }, { "name": "p", "data": [ { "name": "text", "data": "无机金属氧化物也可以作为HIL材料，其不具有酸性，不会腐蚀柔性基底。无机金属氧化物可分为p型材料（如NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "）和n型材料（如TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "），它们本身具有较宽带隙、良好的导电性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，广泛使用的还有MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "等。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1）　氧化钼（MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "）" } ], "level": "4", "id": "s3b2a" } }, { "name": "p", "data": [ { "name": "text", "data": "过渡金属氧化物具有较低的价带，有利于载流子的注入，更重要的是其无腐蚀性。在反型结构中常采用有较宽带隙和较高透光率的MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作HIL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，能使Al电极的功函数从4.3 eV提高到5.3 eV，降低空穴注入势垒，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a），相应的绿光、红光flex-QLEDs的EQE分别为3.78%和3.92%，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "分别为2504 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和6881 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）展示了器件的电流密度-电压-亮度特性曲线图（" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V-L" } ] }, { "name": "text", "data": "）。早期通过蒸镀MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作HIL，然而其制备工艺复杂、成本高，已不能满足大规模生产的要求。随着技术的发展，研究者们尝试采用溶液法制备MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的手段来实现flex-QLEDs的卷对卷大面积制备，例如Li等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作HIL，相比PEDOT:PSS，MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的表面粗糙度较低，有利于载流子注入，致使flex-QLEDs发光稳定性更好。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "过渡金属氧化物对阳极界面的影响。（a）器件的能级示意图。（b）" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V-L" } ] }, { "name": "text", "data": "特性曲线图（插图为绿色和红色flex-QLEDs器件实物图）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。紫外臭氧处理前（c），后（d）对NiOx/PVK界面能带弯曲的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Effects of transition metal oxides on anode interface. （a） Schematic energy band diagram of flex-QLEDs. （b）" }, { "name": "italic", "data": [ { "name": "text", "data": " J-V-L " } ] }, { "name": "text", "data": "characteristic curve （inset： photographs of green/red-emitting flex-QLEDs）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". The band bending at the interface of NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "/PVK before （c） and after （d） UVO treatment" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776470&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776472&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776471&type=", "width": "119.99700165", "height": "87.45400238", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2）　氧化镍（NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "）" } ], "level": "4", "id": "s3b2b" } }, { "name": "p", "data": [ { "name": "text", "data": "传统溶胶-凝胶法制备的NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "（禁带宽度为3.6-4.0 eV）因其具有高稳定性、低成本、良好的空穴传输能力和电子阻挡等特性被作为光电器件的HIL，但其制备需要较高的退火温度（约275 ℃°以上），柔性器件的聚合物衬底不耐高温，这限制了NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "在柔性器件中的应用。2019年，Chen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用低温（150 ℃）燃烧法和紫外臭氧处理合成了NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "，使NiO(OH)表面形成NiO(OH)偶极子和Ni空位，这不仅改变了NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "的能级结构，提高了电导率，而且NiO(OH)的形成引起了真空能级的偏移，空穴注入势垒降低，空穴注入能力提高，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）~（d）。以低温退火和紫外臭氧合成的NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "为基础制备的flex-QLEDs的半衰期比以PEDOT:PSS为基础的器件长3.2倍，CE达到45.8 cd/A、EQE为10.9%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然低温合成与紫外臭氧协同作用能克服高温退火对柔性器件的损害，但该方法制备的flex-QLEDs的效率和运行寿命都大大低于基于前驱体合成方法制备的器件。2021年，Chen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用紫外臭氧辅助处理方法，在低温下制备了NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "-Cu纳米晶体。该flex-QLEDs器件T" }, { "name": "sub", "data": [ { "name": "text", "data": "95" } ] }, { "name": "text", "data": "的运行寿命为2800 h，超过了高温NiO" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "的器件的最长寿命。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "无机金属氧化物作阳极修饰层有三大优点：1）克服高温退火对柔性器件的损害；2）在提高ITO表面的功函数、降低空穴注入势垒的同时降低ITO表面粗糙度；3）提高器件的导电性。当然，除了P型材料的过渡金属氧化物，N型金属氧化物也可被用于阳极修饰，例如具有高电子迁移率、高透光率的氧化钛（TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）。综上所述，阳极界面调控是制备高性能flex-QLEDs的基础，因此选用合适的阳极界面调控材料是提高器件性能的关键。" } ] } ] } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　阴极界面" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "在flex-QLEDs中，电子注入势垒取决于阴极材料的费米能级与ETL的最低未占据轨道（Lowest unoccupied molecular orbital, LUMO）的能级之差。一般来说，能级差越大，电子注入势垒越高，注入效率也就越低，因此在阴极/ETL间嵌入一层界面修饰层促进电子注入是比较常见的界面调控方法，主要目的是控制载流子注入平衡。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.1　电子传输层（ETL）" } ], "level": "2", "id": "s4a" } }, { "name": "p", "data": [ { "name": "text", "data": "QLED中空穴的传输速率一般小于电子的传输速率，为了让电极注入的电子和空穴复合发生在发光层中，一般需要提高空穴的传输速率或降低电子的传输速率。早期，研究者们使用Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（8-hydroxyquinoline）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": " [" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和MEH-PPV" }, { "name": "sup", "data": [ { "name": "text", "data": " [" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、TPBi（1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R38", "R39" ], "text": "38-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等有机材料作ETL，ETL的引入可解决阴极与EML直接接触所导致的激子猝灭问题，但器件在达到一定亮度后ETL也会发光，影响器件的色纯度。后来，研究者们发现能带可调的宽禁带半导体ZnO可以取代有机材料作ETL。并且随着ZnO薄膜的制备工艺不断优化" }, { "name": "sup", "data": [ { "name": "text", "data": " [" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，ZnO薄膜的表面粗糙度大大降低。2014年，Demir等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在耐高温、惰性柔性衬底PI上使用溶液-沉淀法的氧化锌制备了结构为PI/Al/ZnO/QDs/TCTA/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Ag的顶发射flex-QLEDs，改善了ZnO自身的缺陷态，使沉积后薄膜的表面粗糙度降低，器件" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "达到10266 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，EQE达到2.44%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ZnO作界面材料仍存在其它问题：1）ZnO表面存在较多的羟基（-OH），容易诱导激子猝灭，增加激子的非辐射复合几率，从而降低器件性能；2）ZnO的传输速率过快，比常用空穴传输层材料的传输速率大两个数量级，造成载流子传输不平衡，易在HTL/EML界面处发生电子堆积，形成空间电荷，导致激子猝灭；3）阴极/ETL间的注入势垒较小，导致电荷注入不平衡。目前的改善策略为：1）通过掺杂Mg离子，减少ZnO表面上由-OH诱导的激子猝灭位点，抑制激子猝灭并增加辐射复合的几率；2）在ZnO中引入Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "，可有效降低电子迁移速率，缓解电子过度注入，同时Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "还可以钝化ZnO表面的缺陷。2018年，Chen等在Mg:Zn前驱体用量比例为5 wt%基础上，引入不同含量的Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "制备了ZnO:Mg@Cl的ETL。得到引入0.3 mmol Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "为最佳掺杂比例，并以此制备了刚性QLEDs，器件的CE、EQE可以实现大幅度提升" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "；3）通过引入界面修饰层，如5.2.2中的电子阻挡层（Electron block layer, EBL），可以增加电子注入势垒，牺牲电子传输速度，平衡载流子。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "使用ZnO，Cl@ZnO，ZnO：Mg和Cl@ZnO：Mg NPs作ETL的QLED的电流效率和EQE统计图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Current efficiency and EQE statistical diagram of the QLEDs using ZnO， Cl@ZnO， ZnO：Mg and Cl@ZnO：Mg NPs as the ETLs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776473&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776475&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776474&type=", "width": "70.62599945", "height": "49.24800110", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.2　阴极/ETL间的界面修饰层" } ], "level": "2", "id": "s4b" } }, { "name": "p", "data": [ { "name": "text", "data": "在正型器件中，由于Al、Ag这类金属具有较高的功函数（约为4.3 eV），单独作为阴极材料会导致电子注入时需要克服较大的势垒。为此，可通过在阴极/ETL间引入电子注入层（Electron injection layer, EIL，也称为偶极子层）或介质层来降低电子注入势垒，促使载流子达到平衡，减少俄歇复合的几率。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.2.1　电子注入层（EIL）" } ], "level": "3", "id": "s4b1" } }, { "name": "p", "data": [ { "name": "text", "data": "Al、Ag等阴极材料和ETL（如Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）间存在较大的势垒，早期的解决办法是在阴极和ETL间插入活泼碱金属（如Li" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ca等）作为EIL。2009年，Xu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/阴极间引入Ca作EIL，如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a），这降低了Al电极的功函数（从4.3 eV到2.9 eV），如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）。虽然碱金属的插入有利于电子的注入，但活泼金属易扩散的特性使其在有机层中形成n型掺杂，降低器件的稳定性。为解决稳定性差的问题，研究者们找到了一种可替代活泼金属的碱金属卤化物LiF" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "作EIL，其在阴极/ETL间可以产生偶极矩，降低ETL的LUMO能级，进而降低电子注入势垒。此外，（[9,9-二辛基芴-9,9-双（N，N-二甲基胺丙基）芴）（9-bis(3'-(N,N-dimethylamino)propyl)- 2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)], PFN）也可以作为EIL材料，当高功函数金属与PFN侧链上的-NH-基团接触时，电负性很高的金属相当于电子势阱，两者之间的相互作用使得具有带电基团的聚合物形成一定的取向，即在金属表面形成方向由内部指向外部的电偶极。PFN/Al的阴极模式可降低金属表面的有效功函数，增强电子注入能力。并且，PFN还有一种特殊的性质——只溶解于水、醇等极性溶剂，而不溶于发光聚合物所易溶的非极性溶剂（如甲苯等），这使得EML与电极在印刷过程中不会互溶，适用于全溶液法制备柔性量子点发光二极管。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "电子注入层和介质层对阴极界面的影响。（a）Ca作为EIL的flex-QLEDs薄膜照片，以及（b）Ca作为EIL后电子注入势垒的变化" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。（c）ZnO薄膜的AFM（左图）和（d）ZnO/PMMA薄膜的AFM（右图）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Effect of EIL and dielectric layer on cathode interface. （a） Photograph of flex-QLEDs with Ca as the EIL， and（b） change of electron injection barrier after depositing Ca as the EIL" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （c） AFM images of ZnO thin films （left） and （d） ZnO/PMMA thin films （right）" }, { "name": "sup", "data": [ { "name": "text", "data": " ［" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776476&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776478&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776477&type=", "width": "111.06695557", "height": "72.12749481", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.2.2　介质层" } ], "level": "3", "id": "s4b2" } }, { "name": "p", "data": [ { "name": "text", "data": "在正型flex-QLEDs中，以阴极材料AgNWs为例，虽然AgNWs具有抗弯折范围大和低电阻率等优点，但由于柔性衬底的存在，其表面粗糙度仍然较大。为解决此问题，Li等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用全溶液法在AgNWs/ETL间插入一层有机材料聚甲基丙烯酸甲酯（poly(methyl methacrylate, PMMA）作介质层，达到了双重效果：1）作为填充材料，降低ZnO表面粗糙度，增大AgNWs与ETL的接触面积，有利于AgNWs成膜，如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（c）~（d）；2）平衡载流子注入，提高器件效率和稳定性。但PMMA作为一种绝缘材料，膜过厚会阻碍载流子传输，所以需要合适的膜厚。" } ] } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　发光层（EML）调控" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "EML界面调控可分为两部分，分别是对EML自身的调控" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } } ], "rid": [ "R43", "R44", "R45" ], "text": "43-45", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和EML与功能层间的界面修饰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5.1　量子点（QDs）薄膜调控" } ], "level": "2", "id": "s5a" } }, { "name": "p", "data": [ { "name": "text", "data": "虽然不同量子点材料具有不同的结构，但它们在沉积成膜的过程中存在相同的问题，即薄膜均匀性差，表面缺陷态多等。为了形成高质量薄膜，可以对EML自身进行调控，调控手段有两种：1、表面处理。2、缺陷钝化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5.1.1　EML的表面处理" } ], "level": "3", "id": "s5a1" } }, { "name": "p", "data": [ { "name": "text", "data": "由于QDs薄膜在制备过程中易遭受污染，所以需要采取等离子体处理进行清洁。2015年，Li等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在制备flex-QLEDs时发现CdSe/ZnS QDs薄膜易受到环境中水氧的破坏，使EML表面产生一些杂质，影响器件发光。为此，他们采用氩等离子体对QDs表面进行处理，不仅降低了表面吸附的氧原子等猝灭中心的发生几率，而且减少了QDs的团聚，降低了EML表面粗糙度。最终，flex-QLEDs的CE由0.92 cd/A提高到1.38 cd/A。值得注意的是等离子体轰击薄膜表面时间要适度，过长会破坏QDs结构，导致器件性能较差。此外，还可以效仿flex-PeLEDs和刚性QLED的一些表面处理策略。这些策略可分为两大类：1）配体交换：通过杂化配体对QDs进行配体交换不仅能去除QDs表面陷阱态，抑制非辐射复合和效率滚降现象，除了减少相分离等方法也能抑制俄歇复合，提高器件效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } } ], "rid": [ "R47", "R48", "R49" ], "text": "47-49", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2）QDs表面冲洗：用辛胺、氯仿等溶液清洗EML，不仅能去除表面存在杂质，而且能减少界面缺陷、缓解电荷注入不平衡，提高器件性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } } ], "rid": [ "R50", "R51" ], "text": "50-51", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5.1.2　缺陷钝化" } ], "level": "3", "id": "s5a2" } }, { "name": "p", "data": [ { "name": "text", "data": "目前，QDs种类繁多，主要包括II-VI族镉基量子点、I-III-VI族三元铜铟硫量子点、III-V族磷化铟量子点、新型钙钛矿ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。溶液法制备高质量的EML薄膜对flex-QLEDs的性能有极大的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，针对不同量子点发光材料进行分析，我们发现由于相分离和膜形态不均匀等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，引入有机聚合物等掺杂剂修饰EML的应用研究极少，最常见的便是PVK" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } } ], "rid": [ "R53", "R54", "R55" ], "text": "53-55", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，还有有机小分子乙醇胺（Ethanolamine, ETA）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，阴离子型表面活性剂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，DOFL-TPD（N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dioctylfluorene）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1）　钙钛矿发光材料" } ], "level": "4", "id": "s5a2a" } }, { "name": "p", "data": [ { "name": "text", "data": "和其他量子点材料一样，钙钛矿量子点尺寸越小，比表面积越大，越易在表面形成缺陷态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在溶液到成膜的过程中，钙钛矿量子点表面配体易脱落，致使EML中易产生大量再生缺陷，非辐射复合几率增多，电荷传输/注入受限，因此对钙钛矿量子点薄膜的缺陷钝化是至关重要的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2022年，Ma等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "引入PVK修饰EML薄膜，PVK与未配位的Cu" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "相互作用，进而渗透到EML薄膜的晶界，减少了EML的缺陷，最终增大了辐射复合几率，提高了器件性能。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2）　镉基发光材料" } ], "level": "4", "id": "s5a2b" } }, { "name": "p", "data": [ { "name": "text", "data": "镉基量子点旋涂成膜后，EML仍存在较多的缺陷、空洞和晶界" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，增大了表面粗糙度，降低器件性能。为了减少镉基量子点成膜后的缺陷态，Liang等" }, { "name": "sup", "data": [ { "name": "text", "data": " [" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在EML中掺杂PVK，从而减少ETL薄膜的缺陷态，使沉积在EML上的HTL的表面粗糙度也大大降低（从5.87 nm到1.38 nm），EML/HTL间更紧密，减少漏电流。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3）　磷化铟基发光材料" } ], "level": "4", "id": "s5a2c" } }, { "name": "p", "data": [ { "name": "text", "data": "当前，flex-QLEDs的器件结构多为多层结构，即，EML夹杂在有机HTL和无机ETL间，但有机、无机材料的载流子迁移率不同，这导致ETL的电荷密度不对称，发生电子泄漏现象，进而破坏功能层间界面。为解决这个问题，可以往InP QDs中引入PVK" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、DOFL-TPD" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等促使QDs间更稳定，平衡电荷注入。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2022年，Liu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将发光层设计成InP:PVK的混合体系，在该器件中，PVK的引入能起到两方面功效：1）平衡载流子，改善EML的空穴传输能力。2）减少QDs团聚。2021年，Han等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "便是将QDs与DOFL-TPD混合形成共混膜。DOFL-TPD的引入，可以起到三个作用：1）促使EML膜表面更光滑，减少缺陷态，促进电荷在界面的传输。2）抑制了EML中电子的泄漏，提高器件性能。3）共混EML具有电子阻塞特性，提高器件稳定性。所以，EML引入有机掺杂剂对EML薄膜缺陷钝化至关重要，我们应积极探索其他可作掺杂剂的界面修饰材料。" } ] } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5.2　量子点（QDs）/电荷传输层（CTL）界面" } ], "level": "2", "id": "s5b" } }, { "name": "p", "data": [ { "name": "text", "data": "QDs的球形结构和易团聚的性质使EML具有较差的抗弯曲能力和较大的表面粗糙度，在有限的弯曲范围内，EML会形成一定的微裂纹，致使器件失效" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，制备过程中使用不同空穴迁移率的HTL材料和不同电子迁移率的ETL材料，如上述的" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "，导致载流子注入和传输的不平衡，最终空穴或电子堆积在EML/CTL（Charge transport layer）界面，增加激子猝灭几率，降低器件性能。为提高flex-QLEDs的抗弯曲能力，需要在不破坏器件本征发光性能的基础上，在QDs与CTL间引入聚合物保护层进行界面调控。目前flex-QLEDs的EML材料主要采用镉基量子点，其他材料减少，所以本文探讨的界面调控大多是围绕镉基量子点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "根据器件结构，本文将QDs/CTL界面分为量子点／ETL界面、量子点／HTL界面两大部分，并对这两方面界面调控进行详细叙述。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5.2.1　量子点（QDs）／空穴传输层（HTL）界面" } ], "level": "3", "id": "s5b1" } }, { "name": "p", "data": [ { "name": "text", "data": "前面提到HTL的电荷迁移率比ETL低，致使QDs/HTL界面易发生载流子堆积，从而会形成空间电荷，导致激子猝灭，针对这一问题，可以在QDs/HTL界面加入界面偶极子层。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，全溶液法构筑的反型flex-QLEDs效率普遍低下，原因有两个：1）其大多采用poly-TPD或PVK作HTL，导致QDs和HTL间不存在正交溶剂，使得HTL的溶剂严重破坏EML；2）QDs/HTL间较大的空穴注入势垒增大了非辐射复合的几率。为解决此困境，研究者们找到了一种含有降低电极功函数的脂肪胺基团的聚乙烯亚胺（Poly(ethylenimine), PEIE），将其作为QDs/HTL的界面偶极子层。2017年，Yang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在QDs间引入PEIE进行界面调控，其有三大功效：1）PEIE胺基因物理吸附诱导形成界面偶极子层，促使QDs价带、导带均提高0.6 eV（此时PEIE厚度为15.5 nm），降低了QDs/HTL间的注入势垒，提高空穴传输能力，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（a）；2）PEIE可促进QDs薄膜平坦化，有利于空穴均匀注入，提高载流子注入效率；3）作物理缓冲层，在HTL沉积过程中可以保护EML不受溶剂侵蚀，从而降低漏电流。PEIE修饰的flex-QLEDs，其CE从35.1 cd/A提升到65.3 cd/A，EQE从8.4%提升至15.6%，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（b）。进一步地，Du等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在QDs/PVK间引入PEIE作界面偶极子层，制备了反型flex-QLEDs，器件" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "达到4342 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "PEIE对QDs/HTL界面的影响。（a）反型flex-QLED的能带图。（b）两种器件的电流效率-外量子效率-亮度特性曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Effects of PEIE on QDs/CTL interface. （a） Schematic energy band diagram of inverted flex-QLED. （b） Current efficiency-EQE-luminance characteristics curve of two devices" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776479&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776481&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776480&type=", "width": "70.56115723", "height": "92.16442108", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5.2.2　量子点（QDs）／电子传输层（ETL）界面" } ], "level": "3", "id": "s5b2" } }, { "name": "p", "data": [ { "name": "text", "data": "前面提及EML在弯曲条件下易形成微裂纹，致使器件失效；电子的传输速率较快，导致较多电子进入EML，增大非辐射复合几率，影响器件的效率和稳定性。为此，需要引入PMMA、聚乙烯吡咯烷酮（Polyvinylpyrrolidone, PVP）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、PEIE、PFN、聚乙烯亚胺（Poly(ethylenimine), PEI）等聚合物材料对QDs/ETL界面进行调控。根据不同的器件结构选择合适的界面修饰材料，提高QDs的分散性，有利于形成均匀的薄膜，调节载流子的传输能力，从而提高flex-QLEDs的抗弯曲性能和光电性能。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1）　电子阻挡层（EBL）" } ], "level": "4", "id": "s5b2a" } }, { "name": "p", "data": [ { "name": "text", "data": "受刚性器件启发" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，2019年，Li等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了具有混合发光层（QDs:PMMA）的flex-QLEDs，如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（a）~（b）。PMMA的引入起到了两个作用：1）力学上，不仅使邻近QDs连接更紧密，减轻器件弯曲后狭缝造成的影响，而且可以保护QDs不直接与水、氧气接触，但器件亮度受弯曲半径的影响，如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（c）；2）电学上，PMMA由于其绝缘特性可作为EBL，减缓电子的注入。最终，PMMA的引入减缓了flex-QLEDs亮度比（" }, { "name": "italic", "data": [ { "name": "text", "data": "L/L" }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] } ] }, { "name": "text", "data": "，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为在4 mm的弯曲半径下器件的瞬时亮度；" }, { "name": "italic", "data": [ { "name": "text", "data": "L" }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] } ] }, { "name": "text", "data": "为器件初始亮度）的衰减，如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（d）。除PMMA外，乙氧基化的PEIE" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "也可作EBL。采用PMMA、PEIE等绝缘材料作EBL，虽然会降低导电性，但通过减缓电子注入、减少激子猝灭等策略，整体上还是可以提高flex-QLEDs的发光性能和器件的抗弯折能力。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "QDs/ETL界面调控。（a）具有混合发光层（QDs：PMMA）的flex-QLEDs的结构图，（b）能带示意图，（c）亮度与弯曲半径的关系图，（d）" }, { "name": "italic", "data": [ { "name": "text", "data": "L/L" }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] } ] }, { "name": "text", "data": "随弯曲次数的变化" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Regulation of QDs/ETL interfaces. （a） Device structure diagram of the flex-QLEDs with mixed EML of QDs：PMMA， schematic energy band diagram （b）， relationship of luminance and bending radius （c）， " }, { "name": "italic", "data": [ { "name": "text", "data": "L/L" }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] } ] }, { "name": "text", "data": " varies with bending cycles （d）" }, { "name": "sup", "data": [ { "name": "text", "data": " ［" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776482&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776484&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776483&type=", "width": "119.41082001", "height": "84.83249664", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2）　空穴阻挡层" } ], "level": "4", "id": "s5b2b" } }, { "name": "p", "data": [ { "name": "text", "data": "在PeLEDs制备过程中，ETL的溶剂处理易在EML表面引入大量缺陷。这些缺陷将存在于EML/ETL界面处，通过俘获载流子的方式抑制激子复合，器件效率降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在flex-PeLEDs中，PEIE、PEI在flex-QLEDs中可作为HBL来修饰EML/ETL（ZnO）界面。它们不仅能降低ZnO的功函数（从4.26 eV到3.1 eV）和表面粗糙度，而且可以与ETL共同构成HBL（Hole Block Layer），将空穴阻挡在ETL外、聚集在EML内，增加激子复合的几率，提高器件性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，Bphen（4,7-Diphenyl-1,10-phenanthroline）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "等也可作HBL被用于flex-QLEDs中。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3）　界面偶极子层" } ], "level": "4", "id": "s5b2c" } }, { "name": "p", "data": [ { "name": "text", "data": "在QDs/ETL间引入共轭聚电解质材料PFN作界面偶极子层是一种常见的界面调控手段" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，在ITO/ZnO/InP QDs/TCTA/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al的器件结构中，由于电子从ETL（ZnO）注入到InP QDs的势垒（约为0.5 eV）高于空穴从HTL（4,4',4''-Tris(carbazol-9-yl)-triphenylamine, TCTA）注入到InP QDs的势垒（约为0.2 eV），导致了器件电荷注入不平衡。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为解决此问题，2013年，Char等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在ETL/QDs间引入PFN，通过真空能级漂移，降低电子注入屏障，如" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "（a），提高了载流子在EML内的复合几率，加上辐射复合的激子被lnP壳层有效钝化，使器件的EQE达到3.46%。值得注意的是，PFN膜厚决定了flex-QLEDs性能的高低，过厚会使电子隧穿的势垒变宽，电子注入到EML就会极其困难，所以寻求合适的膜厚才可获得高性能的flex-QLEDs。此外，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和TCNQ也可作为界面偶极子层材料，通过抑制ZnO和QDs之间的电荷转移，防止激子猝灭。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "（a）PFN界面偶极层对flex-QLEDs能带变化的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。（b）flex-QLEDs的最高EQE纪录趋势图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R19", "R20", "R21" ], "text": "19-21", "type": "bibr" } }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "（a） Changes of energy band diagram of the flex-QLEDs with PFN as an interfacial dipole layer" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b） The highest recorded trend of EQE the flex-QLEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R19", "R20", "R21" ], "text": "19-21", "type": "bibr" } }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776485&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776487&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776486&type=", "width": "159.08956909", "height": "44.82194901", "fontsize": "" } ] } } ] } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "6　界面调控对flex-QLEDs的性能提升" } ], "level": "1", "id": "s6" } }, { "name": "p", "data": [ { "name": "text", "data": "到目前为止，虽然flex-QLEDs的性能仍有待提高，但通过对制备工艺、器件结构、QDs材料的优化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、柔性电极的改进和界面的调控，已取得了较大的突破。Flex-QLEDs的最高EQE数据趋势如" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "（b）。" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "列出了界面调控后flex-QLEDs的发光性能。对比发现，基于红光QDs材料的flex-QLEDs的光电性能明显高于绿光的，而蓝光的光电性能要远低于前两者。而且，三原色器件在高亮度下的CE均降低，可能是柔性电极表面粗糙度大导致的，这再次强调了电极界面调控在柔性器件中的重要性。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": 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"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36776488&type=", "width": "162.79997253", "height": "80.33364105", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "表3列出了几个flex-QLEDs的抗弯曲性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可得到如下结论：1）当弯曲半径大于5 mm时，flex-QLEDs在形变下无任何退化现象，发光效率基本保持不变；2）当弯曲半径小于5 mm时，flex-QLEDs的CE和EQE迅速下降。这可能是由于在低于临界半径（5 mm）下弯曲的flex-QLEDs因ITO薄膜开裂，器件性能受损" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，flex-QLEDs的抗弯曲性能有待进一步提高。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "7　结　　论" } ], "level": "1", "id": "s7" } }, { "name": "p", "data": [ { "name": "text", "data": "本文综述了界面调控在柔性量子点电致发光器件性能优化的重要地位，然后从阳极界面、阴极界面、发光层三个大方面总结了对薄膜表面改性和引入界面修饰层的优势。并详细介绍了空穴注入层、电子阻挡层、界面偶极子层、空穴阻挡层、电子传输层、电子注入层、介质层的工作原理及性能提高效果。以上界面修饰层所带来的界面调控效果主要是改变功能层或电极的功函数、减小载流子注入/传输势垒、降低薄膜表面粗糙度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，研究者们在柔性电极弯折易断裂，功能层间粘附力不足等方面已取得一定进展，在此基础上，未来工作可以尝试从优化界面修饰层厚度、降低基底表面的表面能、提升界面结合力出发。从调整界面修饰层厚度角度出发，界面修饰层的厚度对flex-QLEDs的性能影响较大，而目前制备工艺中常用的旋涂法难以精确调控界面修饰层的膜厚。若能将先进沉积技术运用到所有功能层的制备中，如原子层沉积（Atomic layer deposition, ALD），利用其高均匀性、高覆盖率和厚度精确调控等优点，必将让flex-QLEDs在显示领域有质的飞跃；从降低基底表面的表面能角度出发，因柔性聚合物基底表面表面浸润性差，功能层难以形成，制备得到的flex-QLEDs的性能较差，未来可以尝试在基底表面进行微结构设计，提高功能层浸润性，以形成致密、定向的薄膜，提升flex-QLEDs的整体性能；从提升界面结合力角度出发，可以在EML/CTL间引入具有自修复功能的聚合物作界面修饰层，提高flex-QLEDs的弯曲稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": 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