High Stable Micro Green Light-emitting Diodes Based on ZnO∶Ga/InGaN Heterojunction Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高稳定性ZnO∶Ga/InGaN异质结微型绿光发光二极管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High Stable Micro Green Light-emitting Diodes Based on ZnO∶Ga/InGaN Heterojunction" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "林", "givenname": "毅", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIN", "givenname": "Yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "first-author" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： linyihit@hyit.edu.cn", "data": [ { "name": "text", "data": "E-mail： linyihit@hyit.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "林毅（1986-），男，江苏淮安人，博士，讲师，2015年于东南大学获得博士学位，主要从事半导体光电材料与器件方面的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818820&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818826&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818823&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "林毅" }, { "name": "text", "data": "（1986-），男，江苏淮安人，博士，讲师，2015年于东南大学获得博士学位，主要从事半导体光电材料与器件方面的研究。" } ] ] } ], "email": "linyihit@hyit.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "雷", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Lei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "范", "givenname": "宝路", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FAN", "givenname": "Bao-lu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "于", "givenname": "彦龙", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YU", "givenname": "Yan-long", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "徐", "givenname": "春祥", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Chun-xiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "xcxseu@seu.edu.cn", "data": [ { "name": "text", "data": "xcxseu@seu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "徐春祥（1965-），男，江苏兴化人，博士，教授，博士生导师，1997年于中国科学院长春物理研究所获得博士学位，主要从事纳米光电功能材料与器件及其生物医学的功能应用的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818829&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818843&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818837&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "徐春祥" }, { "name": "text", "data": "（1965-），男，江苏兴化人，博士，教授，博士生导师，1997年于中国科学院长春物理研究所获得博士学位，主要从事纳米光电功能材料与器件及其生物医学的功能应用的研究。" } ] ] } ], "email": "xcxseu@seu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "淮阴工学院 数理学院， 江苏 淮安　223003", "data": [ { "name": "text", "data": "淮阴工学院 数理学院， 江苏 淮安　223003" } ] }, { "lang": "en", "label": "1", "text": "Faculty of Mathematics and Physics， Huaiyin Institute of Technology， Huai'an 223003， China", "data": [ { "name": "text", "data": "Faculty of Mathematics and Physics， Huaiyin Institute of Technology， Huai'an 223003， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "东南大学 生物科学与医学工程学院， 江苏 南京　210096", "data": [ { "name": "text", "data": "东南大学 生物科学与医学工程学院， 江苏 南京　210096" } ] }, { "lang": "en", "label": "2", "text": "School of Biological Science and Medical Engineering， Southeast University， Nanjing 210096， China", "data": [ { "name": "text", "data": "School of Biological Science and Medical Engineering， Southeast University， Nanjing 210096， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "绿光光源可广泛应用于固态照明、可见光通信、电子显示、光遗传学等领域。相比于蓝光LED，高性能低维绿色发光器件的设计与制备受限于绿光效率低（Green gap）和高注入电流下效率下降（Efficiency droop）两个主要问题的困扰。本文采用化学气相沉积方法（CVD）生长镓掺杂的氧化锌微米线（ZnO∶Ga MW），结合p型InGaN衬底制备了n‐ZnO∶Ga MW/p‐InGaN异质结发光二极管。该器件的输出波长为540 nm，半峰宽约为32 nm，在相对较大的注入电流下，器件发光峰位、半峰宽等发光特征参数没有明显的变化，且相对外量子效率（REQE）在较大电流下呈现出相对较小的下降，体现了较高的发光稳定性。此外，利用金纳米薄膜改善了ZnO∶Ga微米线与InGaN衬底间的接触，实现了结区界面的优化，成功提高了发光二极管的发光强度。实验结果表明，采用n‐ZnO∶Ga微米线结合p‐InGaN衬底构筑的异质结可用于制备高稳定性高亮度的微型绿光发光二极管。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Light sources with wavelengths in the green region are very important for a wide gamut of applications， including solid-state lighting， visible light communications， agriculture， optogenetics， and so on. Compared to blue light-emitting diodes（LEDs）， the fabrication of high-performance low-dimensional green LED has long been limited by “Green gap” and “Efficiency droop”. In this work， a kind of green LED composed of p-type InGaN layers and a single Ga doped ZnO microwire（ZnO∶Ga MW） was designed. The experiment results indicated that this LED device had a central wavelength located at 540 nm and a linewidth of about 32 nm. Most important of all， increasing the operating current at high level， no noticeable variations in the electroluminescence characteristics and relative external quantum efficiency（REQE） could be observed. Additionally， a cladding of Au nanofilm was introduced on the surface of microwire to optimize the interface quality of n-ZnO∶Ga MW/p-InGaN heterojunction， resulting in the better uniform contact between ZnO∶Ga and InGaN， and the higher output intensity. This work demonstrates that such heterojunction composed of n- ZnO∶Ga and p-InGaN is a promising candidate for fabricating a new generation of high-brightness microscale green LEDs." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "绿光发光二极管" } ], [ { "name": "text", "data": "金纳米薄膜" } ], [ { "name": "text", "data": "镓掺杂氧化锌微米线" } ], [ { "name": "text", "data": "铟镓氮" } ], [ { "name": "text", "data": "相对外量子效率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "green LED" } ], [ { "name": "text", "data": "Au nano-film" } ], [ { "name": "text", "data": "Ga doped ZnO microwire" } ], [ { "name": "text", "data": "InGaN" } ], [ { "name": "text", "data": "relative external quantum efficiency（REQE）" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "基于半导体材料的发光二极管（LED）在固态照明、可见光通信、农业生产、电子显示、生物医疗与生命科学等领域得到了广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。作为典型的可见光光源，高能效比、使用寿命长的绿色光源在各方面具有重要作用，但绿光发光材料和器件的制备一直受限于“Green gap”和“Efficiency droop”两个问题的困扰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R5", "R6", "R7" ], "text": "5-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近十多年来，基于钙钛矿、有机分子、氮化物等不同材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，人们已成功制备了多种不同结构的绿光LED。但这些材料和器件在实现绿光发射的同时，仍然存在一些亟需解决的问题。对于钙钛矿绿光LED，器件结构中钙钛矿发光层与电极材料以及缓冲层之间存在的缺陷态会严重影响器件的发光效率。此外，钙钛矿微纳米晶相对较差的稳定性也极大地制约了钙钛矿LED的制备与应用。对于有机发光二极管（OLED），其光电性能依赖于高性能有机材料，且其发光强度、效率和寿命相对较低。对于InGaN绿光LED，目前已得到了广泛的研究，但器件的“Green gap”和“Efficiency droop”问题尤为突出。为了实现绿光发射，需要提高InGaN量子阱中的In组分。高In组分会增加InGaN中的缺陷态密度和极化电场，从而导致材料中载流子非辐射复合的几率增加、光谱半峰宽过宽以及光谱品质降低等一系列问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。并且，由于其强极化场的存在，量子斯塔克效应也对InGaN基光电器件性能造成很大影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于微型结构器件，随着材料和器件特征尺寸减小，载流子非辐射复合、载流子溢出、积热等问题越发严重，也会导致低维绿光器件的发光效率进一步下降" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R14", "R15", "R16" ], "text": "14-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而较为苛刻的生长条件和极其昂贵的生长处理设备也限制了InGaN基低维绿光器件的制备和推广应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，针对绿光微型发光器件，设计合理的材料结构体系，从而实现经济、稳定、高效的绿光发射，仍然是该领域的一个研究重点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "氧化锌作为一种典型的宽带隙（3.37 eV）半导体，室温下激子束缚能高达60 meV，在制备高性能光电器件方面已经得到了广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R18", "R19", "R20" ], "text": "18-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。氧化锌还具有丰富的微纳结构、优异的结晶质量以及光滑的表面，是制备微纳发光器件的理想材料。本文采用化学气相沉积（CVD）方法生长了结晶质量优异的镓掺杂ZnO微米线（ZnO∶Ga MW），选择p型InGaN衬底作为空穴注入层，设计制备了n-ZnO∶Ga MW/p-InGaN异质结发光器件。实验结果表明，当正向电压大于一定值时，该器件发射出明亮的绿光，发光峰位于540 nm，半峰宽（FWHM）约为32 nm。随着电流在一定范围内增加，该器件的电致发光峰位、半峰宽没有明显的变化，呈现出良好的发光稳定性。能带结构分析表明，绿光发射归因于n-ZnO∶Ga微米线的电子与p-InGaN的空穴在异质结界面发生的辐射复合。该器件的相对外量子效率（REQE）在注入电流增加时下降较小，这表明本实验设计制备的n-ZnO∶Ga MW/p-InGaN异质结发光二极管一定程度上解决了高缺陷态密度和强极化电场所导致的“Green gap”和“Efficiency droop”两个重要问题。进一步，本实验使用金纳米薄膜对ZnO∶Ga微米线进行修饰，优化了异质结界面接触，有效提高了绿光发光二极管的发光强度。因此，本文设计的异质结构获得了高稳定性的绿光发射，有望实现高性能绿光发光器件的制备与应用。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　ZnO∶Ga微米线生长" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用CVD法，以超纯Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "粉末作为掺杂源，在无催化条件下制备了ZnO∶Ga微米线。具体步骤如下：将质量比为9∶1∶10的高纯ZnO粉末、Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "粉末和碳粉充分研磨混合，取适量混合粉末作为生长源，均匀平铺于尺寸为10 cm（长）×2 cm（宽）×1.5 cm（高）的石英舟内。将清洗过的硅片（2 cm×2 cm）抛光面朝下，覆盖在石英舟上，随后将石英舟推放至管式炉的高温中心区域。通入氩气和少量氧气作为生长气体，气体总流量为135 mL/min。将高温管式炉快速升温至1 100 ℃，反应1 h后，待管式炉自然冷却至室温，取出石英舟，即可在硅片和石英舟侧壁直接观测到密集的ZnO∶Ga微米线，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）石英舟中ZnO∶Ga微米线的光学照片；（b）单根ZnO∶Ga微米线的SEM图像；（c）ZnO∶Ga微米线的XRD图谱；（d）单根ZnO∶Ga微米线的EDS元素分析，表明Zn、Ga和O三种元素均匀分布在微米线中。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "（a）Optical photograph of the synthesized ZnO∶Ga MW. （b）SEM image of an individual ZnO∶Ga MW， illustrating straight and smooth sidewall facets. （c）XRD pattern for the synthesized ZnO∶Ga MWs. （d）EDS elemental mapping of a ZnO， illustrating its uniform composition of Zn， O and Ga species." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818846&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818855&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818851&type=", "width": "132.87854004", "height": "96.42364502", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　异质结发光器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "本实验中的绿色发光器件采用单根ZnO∶Ga微米线作为n型材料，p型InGaN衬底作为空穴注入层（该衬底为商业化晶片，采用金属有机化学气相沉积在蓝宝石衬底上依次生长p型GaN和InGaN量子阱层）。该器件的制作流程如下：（1）首先利用电子束蒸镀设备在InGaN衬底一侧制备Ni/Au纳米薄膜电极，厚度为40~50 nm；（2）利用电子束蒸镀设备和掩模板在InGaN衬底上沉积厚度约为5 μm的MgO薄膜作为绝缘层，用于避免顶部电极与InGaN衬底之间的物理接触；（3）选取直径约为10 μm、结晶质量优异的单根ZnO∶Ga微米线，将其放置于MgO绝缘层沟道中；（4）将ITO导电玻璃放置在ZnO∶Ga微米线上方作为异质结器件的顶部欧姆接触电极，n-ZnO∶Ga MW/p-InGaN异质结器件即制作完成；（5）选取直径约为10 μm、结晶质量优异的单根ZnO∶Ga微米线，利用电子束蒸镀设备在其表面蒸镀厚度约为10 nm的Au纳米薄膜，然后再将其放置于InGaN衬底上 MgO绝缘层沟道中；（6）将ITO导电玻璃放置在Au薄膜修饰的ZnO∶Ga微米线上方，n-Au@ZnO∶Ga MW/p-InGaN异质结器件即制作完成。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　样品表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "采用Keysight B1500A测试和表征ZnO∶Ga微米线、InGaN衬底以及上述制备的两种异质结发光器件的电学特性。异质结发光器件的电致发光（EL）特性采用由ANDOR探测器（CCD-13448）和LabRAM-UV Jobin-Yvon光谱仪组成的微区光谱测试系统进行测试。发光器件的电致发光图像在光学显微镜下观察和拍摄。采用He-Cd激光器（激发波长为325 nm）作为单根ZnO∶Ga微米线和InGaN衬底光致发光（PL）的激发光源，使用上述微区光谱测试系统采集其PL光谱。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　ZnO∶Ga微米线形貌与光电学性质" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用CVD方法生长了结晶质量优异的ZnO∶Ga微米线，单根微米线的扫描电子显微镜照片如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示。从图中可以清楚地观察到ZnO∶Ga微米线典型的四边形边界以及光滑的表面。利用X射线衍射（XRD）测试设备分析了单根ZnO∶Ga微米线的晶体属性，测试结果如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）所示。XRD结果表明，ZnO∶Ga微米线的晶格衍射峰位于31.73°、34.33°和36.15°处，与六角纤锌矿结构ZnO的标准卡片（JCPDS no.36-1451）对比，这三个主要衍射峰分别归因于纤锌矿ZnO的（100）、（002）和（101）面。该测试结果进一步证明采用该实验方法生长的单根ZnO∶Ga微米线具有标准的六角纤锌矿结构和较高的结晶质量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了证明镓元素已成功掺入，采用能量色散X射线能谱（EDS）对ZnO∶Ga微米线进行元素分析。所得结果如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（d）所示，Zn、O和Ga元素均匀分布在整根微米线上。这表明实验所制备的ZnO∶Ga微米线成功地掺杂了Ga元素，即Ga原子取代Zn原子的位置形成替位Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R21", "R22" ], "text": "21-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "采用He-Cd激光器作为激发光源对ZnO∶Ga 微米线进行光学表征，光致发光谱如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）所示。单根ZnO∶Ga微米线PL光谱的主要发光峰位于377 nm的紫外波段，光谱半峰宽为10.3 nm，这对应于ZnO∶Ga的近带边发射。此外，PL光谱中可见光波段微小的隆起归结于ZnO∶Ga微米线的缺陷能级所产生的发光。PL光谱结果同样说明了本实验制备的单根ZnO∶Ga微米线具有较高的结晶质量和光学特性。将单根微米线放置在载玻片上，用铟作为电极连接在微米线两端，使用Keysight B1500A半导体参数分析仪测试单根ZnO∶Ga微米线的电学特性，相应的电流-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）曲线如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示。相对于未掺杂的ZnO微米线，Ga元素的掺杂使ZnO∶Ga微米线的导电能力得到了极大的提高和改善。因此，拥有优异电学和光学特性的单根ZnO∶Ga微米线为制备高性能的电致发光器件提供了良好的材料基础" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R21", "R22" ], "text": "21-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）单根ZnO∶Ga微米线的PL光谱；（b）单根ZnO∶Ga微米线的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "（a）PL spectrum of a ZnO∶Ga MW. （b）" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " characteristic curve of an individual ZnO∶Ga MW." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818857&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818862&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818860&type=", "width": "74.83557129", "height": "37.31991577", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　n-ZnO∶Ga MW/p-InGaN异质结电致发光" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "选择单根ZnO∶Ga微米线和p型InGaN衬底制备了异质结发光器件，相应的器件制备过程参考上文实验部分，器件的结构示意图如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）上插图所示。在该器件结构中，Ni/Au电极作为阳极电极，ITO作为阴极电极，MgO作为ITO与p-InGaN衬底之间的绝缘层。首先，采用Keysight B1500A对制备的异质结进行相应的电学特性测试，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）所示。图线总体呈现良好的整流特性，漏电流在偏压为-15 V时为8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " A，器件的开启电压约为4.7 V。反向电压下较低的漏电流可以证明ZnO∶Ga/InGaN界面中低的缺陷态密度以及其优异的结晶质量，这与之前报道的基于ZnO/Si、ZnO/GaN等异质结光电器件类似" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R23", "R24" ], "text": "23-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）n-ZnO∶Ga MW/p-InGaN异质结发光器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线，上插图为该器件的结构示意图，下插图为器件在1.9 mA工作电流下的发光照片；（b）器件的EL光谱，注入电流为0.15～2.0 mA，插图为器件EL光谱积分强度和半峰宽随注入电流的变化关系；（c）器件的相对外量子效率；（d）1.8 mA注入电流下，器件电致发光强度随时间变化关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "（a）" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " curve of the fabricated n-ZnO∶Ga MW/p-InGaN heterojunction，the upside inset shows the schematic diagram of the device， and the downside inset is the digital picture of the luminous device at an input current of 1.9 mA. （b）EL spectra of the heterojunction device measured by varying current in the range of 0.15-2.0 mA， the inset is variation cure of the integrated EL intensity and FWHM " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " injection current. （c）Variation of the REQE as a function of injection current. （d）Time-dependent EL intensity of the device measured at the input current of 1.8 mA." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818865&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818871&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818868&type=", "width": "135.28228760", "height": "116.93614197", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在n-ZnO∶Ga MW/p-InGaN异质结发光器件的电致发光测试过程中，电子由ZnO∶Ga微米线一侧注入，空穴由p-InGaN一侧注入。当正向偏压超过开启电压时，可以观察到明亮的绿光发射，" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）下插图为器件在1.9 mA工作电流下的发光照片。当注入电流从0.15 mA增加到2.0 mA时，使用光谱仪记录其电致发光光谱。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）展示了所制备的异质结器件在不同输入电流下的EL光谱，其发光峰位于540 nm，半峰宽约为32 nm。随着注入电流的增加，发光强度出现明显的增强，而相应的发光峰峰位几乎没有任何移动，这表明器件中的量子斯塔克效应可以忽略不计" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } } ], "rid": [ "R25", "R26" ], "text": "25-26", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。 " }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）插图为该异质结发光器件EL光谱的积分强度和半峰宽随注入电流的变化关系曲线。随着注入电流的增加，光谱的积分强度几乎呈线性增加，相应的半峰宽变化幅度很小（30.9~32.4 nm），这进一步显示了该器件对量子斯塔克效应的不敏感性，也证明了基于n-ZnO∶Ga MW/p-InGaN材料体系制备的异质结绿光发光二极管拥有较高的稳定性。以上实验结果充分说明，本实验设计的n-ZnO∶Ga MW/p-InGaN异质结结构可以用于构筑新型微结构绿光发光二极管。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "作为光电器件的一个重要指标，外量子效率（EQE）" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "可以证明光电器件的高效性、可靠性、稳定性。对于发光器件，其定义为器件发射光子数与注入电子数之比，可以通过以下公式计算：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818879&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818875&type=", "width": "42.41799927", "height": "8.29733276", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "表示异质结发光二极管发射的光子数，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818886&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818881&type=", "width": "3.55599999", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "表示注入器件的电子数，" }, { "name": "italic", "data": [ { "name": "text", "data": "e、 h、 c" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "分别表示元电荷、普朗克常数、光速、异质结发光二极管中的电流，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818898&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818896&type=", "width": "2.62466669", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "表示某一波长下所有光子的总能量。由于" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "是常数，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818898&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818896&type=", "width": "2.62466669", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "与光谱仪测得的EL光谱强度成正比，因此我们可以定义异质结发光二极管相对外量子效率（REQE）" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "，表示为：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818903&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818901&type=", "width": "31.75000000", "height": "7.70466709", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818907&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818905&type=", "width": "6.43466663", "height": "4.31799984", "fontsize": "" } } } ] }, { "name": "text", "data": "表示特定波长的电致光谱强度。 计算各个注入电流下器件的EL光谱积分强度并除以电流强度，即可得到器件电致发光的相对外量子效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在注入电流为0.6~5.4 mA的情况下采集其EL光谱并计算其相对外量子效率，" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）为该器件的相对外量子效率（REQE）随注入电流变化的曲线。如图所示，在较低的输入电流下（0.6~1.2 mA），REQE急剧增加，在3.1 mA的注入电流下达到最大值；当注入电流达到3.7 mA时，REQE开始明显下降。当器件的注入电流达到5.4 mA时，REQE相对于最大值下降了约4%，总体表现出相对较小的下降。与传统绿色发光二极管相比，本实验所设计的n-ZnO∶Ga MW/p-InGaN发光二极管在较高的注入电流下显示出相对较低的效率降低。这表明n-ZnO∶Ga中的电子和p-InGaN中的空穴在n-ZnO∶Ga MW/p-InGaN异质结界面处的非辐射复合几率较低。该现象可以归因于本实验所制备的ZnO∶Ga微米线具有良好的结晶质量及表面形貌，且其内部本征缺陷较少。此外，我们在室内正常环境下对器件进行了长期的发光稳定性测试。注入电流为1.8 mA，其他光谱测试条件保持完全一致，测试结果如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（d）所示。经过12个月存储后，器件的发光强度只有微小降低，EL谱形状也未出现明显变化。该结果进一步证明，本工作中制备的n-ZnO∶Ga MW/p-InGaN异质结绿光二极管具有较高的稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了探究n-ZnO∶Ga MW/p-InGaN绿光发光二极管的发光机制，对p-InGaN衬底进行光致发光测试。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）为归一化的InGaN衬底的PL光谱和器件的EL光谱对比。如图所示，InGaN衬底的PL光谱发光峰位于508 nm，半峰宽为27.3 nm。将ZnO∶Ga微米线PL谱（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a））、InGaN衬底的PL谱与器件EL谱进行比较，可以推断本实验制备的n-ZnO∶Ga MW/p-InGaN异质结发光二极管的绿色发光既不是来自于单根ZnO∶Ga微米线的近带边发光或者可见区发光，也不是来自单纯的InGaN衬底的发光，而是基于ZnO∶Ga/InGaN结区界面处电子-空穴的辐射复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。采用Anderson能带模型给出正向偏压下该器件的能带结构示意图以探究异质结发光器件中载流子的传输过程及其电致发光的物理机制。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）所示，在异质界面上出现了导带和价带的不连续，当施加正向电压时,电驱动注入的空穴倾向于聚集在异质结区的 InGaN衬底一侧，而电子则倾向于聚集在ZnO∶Ga微米线一侧，形成type-Ⅱ型异质结。当施加的电压超过开启电压时，电子和空穴在结区界面处辐射复合并发射出绿光。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）p⁃InGaN衬底和制备的异质结器件归一化光谱；（b）n⁃ZnO∶Ga MW/p⁃InGaN异质结在正向偏压下的能带结构图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "（a）Comparison of normalized PL emission of p-InGaN template and EL of the fabricated heterojunction LED. （b）The energy band diagram of the n-ZnO∶Ga MW/p-InGaN heterojunction under forward bias." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818910&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818916&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818913&type=", "width": "101.99751282", "height": "44.20274353", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　n⁃Au@ZnO∶Ga MW/p⁃InGaN异质结器件" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "在上述实验过程中发现，单根ZnO∶Ga微米线和InGaN衬底之间存在不均匀接触，进而导致本实验所制备的n-ZnO∶Ga MW/p-InGaN器件工作时微米线上存在零星的暗斑。为了优化n-ZnO∶Ga MW/p-InGaN异质结的结区界面以改善器件的发光效果，采用Au纳米薄膜修饰ZnO∶Ga微米线，相应步骤参照上文2.2节部分。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）为Au纳米薄膜修饰的ZnO∶Ga微米线的SEM图像，右上方插图清楚地展示了附着在ZnO∶Ga微米线表面的Au纳米薄膜。 利用He-Cd激光器对Au纳米薄膜修饰前后的微米线进行光谱表征，结果如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）所示。相较于修饰前的ZnO∶Ga微米线，其位于377 nm紫外波段的近带边发光得到了显著增强，峰值强度提高到原值的2.4倍；位于507 nm可见波段的缺陷发光同样得到了一定程度的增强，峰值强度提高到原值的1.8倍。这一现象主要归因于Au纳米结构的表面等离激元共振对Au@ZnO∶Ga微米线光场的场增强效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R28", "R29", "R30" ], "text": "28-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）Au纳米薄膜修饰后ZnO∶Ga微米线的SEM图像；（b）单根Au@ZnO∶Ga微米线与ZnO∶Ga微米线PL光谱，插图为Au修饰前后缺陷光对比；（c）Au纳米薄膜修饰前后ZnO∶Ga微米线的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线；（d）n-Au@ZnO∶Ga MW/p-InGaN异质结发光二极管的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线，插图为相应的器件结构示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "（a）SEM image of an individual Au@ZnO∶Ga MW， the inset image shows an enlarged view of the facets with Au nanofilm. （b）PL spectra of ZnO∶Ga MW and Au@ZnO∶Ga MW. The inset is the defect emission before and after Au decoration. （c）" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " characteristic curves of the individual ZnO∶Ga MW and Au@ZnO∶Ga MW. （d）Electrical characterization " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V " } ] }, { "name": "text", "data": "curve of the fabricated n-Au@ZnO∶Ga MW/p-InGaN heterojunction. The inset shows schematic architecture of the n-Au@ZnO∶Ga MW/p-InGaN heterojunction LED." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818920&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818925&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818922&type=", "width": "114.81799316", "height": "93.63217163", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "使用Keysight B1500A测试了Au纳米薄膜修饰前后ZnO∶Ga微米线的电学特性，相应的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）所示。相较于未修饰的ZnO∶Ga微米线，Au纳米薄膜的修饰进一步提高了ZnO∶Ga微米线的导电能力。结合单根Au@ZnO∶Ga微米线和p型InGaN衬底制备了n-Au@ZnO∶Ga MW /p-InGaN异质结发光器件，相应的器件结构示意图如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d）中的插图所示。使用Keysight B1500A对Au修饰的异质结发光器件的电学特性进行表征，器件相应的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d）所示。" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线表现出良好的整流特性，相应的开启电压为3.5 V。对比未采用Au修饰的异质结器件，修饰后器件的开启电压明显降低（从4.7~3.5 V）。特别是在13 V的正向偏压下，器件工作电流已达到了2 mA。因此，器件的导电能力得到了极大的提升和改善。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在相同的测试条件下对n-Au@ZnO∶Ga MW/p-InGaN异质结器件进行了电致发光性能测试。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）为两种类型器件在1.6 mA工作电流下的单根微米线发光照片。从图中可以明显看出，ZnO∶Ga微米线存在明显的不连续暗斑，其原因可能是微米线与衬底接触不均匀。而对于Au@ZnO∶Ga微米线，发光区均匀覆盖整个微米线，且更加明亮。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（b）展示了Au纳米薄膜修饰的异质结器件EL光谱，相应的注入电流为0.2~1.7 mA。从EL光谱中可以看出，器件的发光峰位仍位于540 nm。随着注入电流的增加，发光强度出现明显的增强，相应的发光峰峰位没有明显的移动。对两种器件的EL光谱积分强度随注入电流的变化关系进行比较，结果如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（c）所示。对于n-ZnO∶Ga MW/p-InGaN发光二极管而言，随着注入电流的增加，光谱的积分强度增加较为缓慢。引入Au纳米薄膜修饰ZnO∶Ga微米线后，发光器件的光谱积分强度增长更加迅速。以上结果表明,Au纳米薄膜的修饰改善了n-ZnO∶Ga MW/p-InGaN异质结界面的接触，优化了结区界面，从而提高了其发光强度。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）1.6 mA工作电流下单根ZnO∶Ga微米线与Au@ZnO∶Ga微米线发光照片；（b）n-Au@ZnO∶Ga MW/p-InGaN异质结发光二极管在电流为0.2～1.7 mA 下的EL光谱；（c）n-ZnO∶Ga MW/p-InGaN发光二极管与n-Au@ZnO∶Ga MW/p-InGaN发光二极管的发光积分强度随注入电流的关系对比。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "（a）Digital pictures of single ZnO∶Ga MW and Au@ZnO∶Ga MW at the same input current of 1.6 mA. （b）EL spectra of n-ZnO∶Ga MW/p-InGaN heterojunction device measured by varying current in the range of 0.2-1.7 mA. （c）Variation of the integrated EL intensity " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " injection current for n-ZnO∶Ga MW/p-InGaN heterojunction and n-Au@ZnO∶Ga MW/p-InGaN heterojunction." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818928&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818933&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818930&type=", "width": "155.48553467", "height": "48.32080078", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文在实验上采用单根n-ZnO∶Ga微米线结合p-InGaN衬底制备了微型绿光发光二极管，实现了高稳定性的绿光发射。器件的发光中心波长始终位于540 nm附近，光谱半峰宽约为32 nm。在较高的工作电流注入下，该器件的相对外量子效率下降较小，表明采用单根ZnO∶Ga微米线和p-InGaN衬底制备的发光二极管能够有效地规避量子斯塔克效应，具有良好的发光稳定性。此外，利用Au纳米薄膜修饰ZnO∶Ga微米线，成功优化了异质结结区界面，提高了器件的发光强度。本研究结果可为高稳定性、高亮度微型绿光发光器件的设计制备提供重要的理论依据和实验参考。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/" } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "CJL.20220331." } ] }, { "name": "p", "data": [ { "name": "text", "data": "E⁃mail: linyihit@hyit.edu.cn" } ] } ] } ], "footnote": [], 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