Research Progress on Organic Light-emitting Diodes and Display Drive Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "有机电致发光器件及显示驱动研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Research Progress on Organic Light-emitting Diodes and Display Drive" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "邹", "givenname": "建华", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZOU", "givenname": "Jianhua", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "邹建华（1983-），男，湖北荆州人，博士，研究员，2010年于华南理工大学获得博士学位，主要从事新型显示器件、有源矩阵（AMOLED）显示屏彩色化、柔性显示技术研究与工艺开发。 E-mail： zjh@newvision-cn.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941776&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941781&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941779&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "邹建华" }, { "name": "text", "data": "（1983-），男，湖北荆州人，博士，研究员，2010年于华南理工大学获得博士学位，主要从事新型显示器件、有源矩阵（AMOLED）显示屏彩色化、柔性显示技术研究与工艺开发。 E-mail： " }, { "name": "text", "data": "zjh@newvision-cn.com" } ] ] } ], "email": "zjh@newvision-cn.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "朱", "givenname": "冠成", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHU", "givenname": "Guancheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "磊", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Lei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "徐", "givenname": "苗", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Miao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "吴", "givenname": "为敬", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WU", "givenname": "Weijing", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "彭", "givenname": "俊彪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "PENG", "givenname": "Junbiao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： psjbpeng@ scut.edu.cn", "data": [ { "name": "text", "data": "E-mail： psjbpeng@ scut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "彭俊彪（1962-），男，山东宁津人,博士，教授，博士生导师，1993年于中国科学院长春物理研究所获得博士学位，主要从事有机发光材料、器件以及驱动相关的研究。 E-mail: psjbpeng@scut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941784&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941788&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941786&type=", "width": "24.89203072", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "彭俊彪" }, { "name": "text", "data": "（1962-），男，山东宁津人,博士，教授，博士生导师，1993年于中国科学院长春物理研究所获得博士学位，主要从事有机发光材料、器件以及驱动相关的研究。 E-mail: " }, { "name": "text", "data": "psjbpeng@scut.edu.cn" } ] ] } ], "email": "psjbpeng@scut.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "华南理工大学 发光材料与器件国家重点实验室， 广东 广州　510641", "data": [ { "name": "text", "data": "华南理工大学 发光材料与器件国家重点实验室， 广东 广州　510641" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Luminescent Materials and Devices， South China University of Technology， Guangzhou 510641， China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescent Materials and Devices， South China University of Technology， Guangzhou 510641， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "广州新视界光电科技有限公司， 广东 广州　510630", "data": [ { "name": "text", "data": "广州新视界光电科技有限公司， 广东 广州　510630" } ] }, { "lang": "en", "label": "2", "text": "Guangzhou New Vision Opto-Electronic Technology Co.， Ltd.， Guangzhou 510630， China", "data": [ { "name": "text", "data": "Guangzhou New Vision Opto-Electronic Technology Co.， Ltd.， Guangzhou 510630， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "经过30多年的发展，得益于对高效有机半导体材料、新型器件结构、器件工作机理的深入理解以及产业界坚持不懈的工程探索，有机发光二极管（Organic light⁃emitting diodes，OLEDs）的综合性能取得了突破性进展，并成功实现了商业化应用，OLEDs新型显示已成为新一代信息技术的先导性支柱产业。本文将从OLEDs器件角度阐述有机电致发光器件以及显示驱动的研究进展，首先结合光电器件性能提升介绍OLED的基本器件结构演变过程，随后系统性重点阐述现阶段产业上广泛使用以及极具应用前景的器件结构，包括p⁃i⁃n OLEDs 器件结构、叠层器件结构、非掺杂器件结构，最后简述OLEDs显示驱动技术，以期为相关科研工作者提供一些有益的参考。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "With more than 30 years of development， organic light-emitting diodes （OLEDs） have made a breakthrough in overall device performances and successfully realized commercial applications due to the development of high-efficiency organic semiconductor materials， new device structures， in-depth understanding of device working mechanisms， and unremitting engineering exploration from the industry. To date， OLED display technologies have become a leading pillar industry of the new-generation of information technology. In this review， the research progress of OLED devices and display driving will be introduced from the perspective of OLED devices. Firstly， the evolution process of OLED basic device structure is introduced in combination with the performance improvement of optoelectronic devices， and then the device structures that are widely used in the industry at this stage and have great application prospects are systematically highlighted， including p-i-n OLED device structures， tandem device structures， and doping-free device structures. Finally， the OLED display driving technology will be briefly described， which is expected to provide some useful guidelines for relevant scientific researchers." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "有机电致发光器件" } ], [ { "name": "text", "data": "p-i-n结构" } ], [ { "name": "text", "data": "叠层器件" } ], [ { "name": "text", "data": "非掺杂器件" } ], [ { "name": "text", "data": "显示驱动" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "organic light-emitting diodes" } ], [ { "name": "text", "data": "p-i-n structures， tandem devices" } ], [ { "name": "text", "data": "doping-free devices" } ], [ { "name": "text", "data": "display driving" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "自从1987年 C W Tang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道有机电致发光器件（OLEDs）以来，由于其具有驱动电压低、发光效率高、响应速度快、视角范围大、超薄、可制备成柔性器件等突出优点，在平板显示领域引起了广泛关注。经过30多年的发展，有机发光材料从内量子效率最高仅为25%的第一代荧光材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R2", "R3" ], "text": "2-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、发光效率接近100%的第二代磷光材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R4", "R5", "R6" ], "text": "4-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，发展到无贵重过渡金属且可实现100%内量子效率的热激活延迟荧光（TADF）材料、热激子材料、有机自由基等第三代有机发光材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R7", "R8", "R9", "R10" ], "text": "7-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；而OLEDs器件结构从单层器件、双层器件，到三层以及多层器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，再到可实现低电压、高稳定性的p-i-n结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以及可获得高亮度、长寿命的叠层结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；OLED驱动方面则从早期的无源驱动到现在广泛使用的有源驱动，有源驱动沟道材料从非晶硅 （α-Si）、低温多晶硅（LTPS）、金属氧化物（MO）到最近引起广泛关注的低温多晶硅与氧化物半导体复合（LTPO）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R16", "R17", "R18", "R19" ], "text": "16-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过从材料到器件结构以及相关工作机理的深入研究，结合产业界坚持不懈的工程探索，OLEDs的效率和稳定性取得了突破，实现了大规模商业化应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，OLEDs已经被广泛应用于智能手机、电视、车载显示、头戴显示、工控设备显示、透明显示、穿戴显示等领域。随着未来以信息电子、健康医疗等为代表的各领域对光电器件的柔性化需求进一步增加，预期OLEDs将具有更为广阔的应用前景。本文从器件角度阐述有机电致发光器件以及显示驱动研究进展，首先介绍OLEDs器件结构的发展历程，随后系统性地阐述了现阶段产业化的器件技术，包括p-i-n OLEDs 器件结构、叠层器件结构、非掺杂器件结构；接着简述了OLEDs器件驱动技术，最后对OLEDs器件以及驱动技术进行展望，以期给相关科研工作者一些有益的参考。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　OLEDs器件结构" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "OLEDs属于注入型发光器件，其基本结构是将有机发光薄膜层夹在至少有一个透明电极的两个电极之间形成三明治结构。在此基础上，人们又开发了更为复杂的器件结构，特别是更多有机细分功能层的引入；这些 “功能层”在提高器件发光效率和器件寿命方面起到了十分重要的作用。有机电致发光器件中的主要有机功能层包括：空穴传输层（HTL）、电子传输层（ETL）、发光层、空穴注入层、电子注入层、空穴阻挡层等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据有机功能层层数，OLEDs器件结构可以分为以下几类。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　单层有机电致发光器件" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "在透明ITO 阳极和金属阴极之间夹一层有机发光层薄膜，即为最简单结构的OLEDs器件，结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）所示。该结构器件要求有机发光层材料需要同时传输空穴和电子，但由于有机发光材料不一定同时具备传输电子和传输空穴的双极性输运能力，大多有机材料的空穴迁移率要大于电子迁移率，所以单层结构的器件不易平衡载流子的运输，从而导致激子复合区域偏向阴极金属表面，产生激子猝灭，大大降低了器件的发光效率。另外，由于发光材料能级与金属电极的不匹配，金属和发光层之间的肖特基接触会使得载流子的注入势垒增大，导致器件的驱动电压增高，而在高电压下，激子会因为浓度过大而发生猝灭，导致器件发光效率降低，工作电压提高，比如早期蒽单晶为介质的电致发光器件，器件工作电压超过100 V，因此单层器件后来被性能更佳的多层器件结构所取代。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "单层和双层OLED器件结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Single layer and double layer OLED device structure" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941791&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941796&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941794&type=", "width": "76.49145508", "height": "32.42535400", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　双层有机电致发光器件" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "双层器件结构是在1987年最早由C W Tang提出的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，制备的器件结构为：阳极ITO/有机材料diamine/有机荧光染料Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/金属阴极Mg∶Ag，其中Diamine作为HTL，Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为发光层以及ETL。该器件可在10 V驱动电压下实现" }, { "name": "text", "data": ">" }, { "name": "text", "data": "1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的亮度，具有了实用价值，在学术界和产业界引起了巨大的轰动。它与单层器件不同之处在于器件的阳极或阴极和发光层之间增加了一层空穴传输层或者电子传输层，见" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）。加入空穴（或电子）传输层后，不仅能有效降低从金属电极注入空穴或注入电子的势垒，解决了单层器件载流子注入不平衡的问题；而且还能阻挡载流子通过该层向电极方向的迁移，使激子复合发生在异质结界面附近，提高了器件的发光效率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　三层和多层器件" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "三层结构的器件模型最早是由日本Adachi提出的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，它一般包括空穴传输层、发光层和电子传输层，与双层器件结构相比，空穴传输层与电子传输层负责调控空穴和电子的注入量，发光层负责激子复合与发光。空穴或电子传输层除有效改善载流子注入外，还具有空穴传输层可以阻挡电子传输到阳极、电子传输层可以阻挡空穴注入阴极，将载流子的复合区域限制在发光层中，避免了激子在电极界面处复合而发生猝灭，这极大地提高了器件的发光效率。整体看三层器件各层材料各司其职，这对于选择材料和器件结构优化十分方便，是目前OLEDs最常采用的器件结构之一。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "但在实际应用中，一般还要引入具有不同功能的有机材料层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，例如，引入空穴注入层或电子注入层可以降低器件的启亮电压和工作电压，来优化器件的电压、亮度、效率、寿命等各项参数，最终达到提高器件效率与稳定性的目的。这类多层器件的结构示意图和能级图见" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "。一般而言，由于大多数有机材料的空穴迁移率远远大于电子的迁移率，使器件中空穴数量过多，因此器件中一般应引入空穴阻挡层以限制多余的空穴向阴极流动，提高激子复合效率，最终提高器件发光效率。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "多层器件结构示意图（a）和能级图（b）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Structure diagram（a） and energy level diagram（b） of multilayer device" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941798&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941802&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941800&type=", "width": "128.31109619", "height": "47.73703003", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　p⁃i⁃n结构OLEDs器件" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "上述OLEDs器件结构从单层到多层优化的目的是为了降低载流子注入势垒、平衡电子、空穴载流子、提升器件发光效率和工作寿命。而一种新的思路即利用有机半导体的电学掺杂技术，设计和制备更低驱动电压、更高发光效率、更长寿命的OLEDs器件。电学掺杂分为p型掺杂与n型掺杂，ｐ型掺杂中掺杂剂的角色类似于无机半导体器件的受主材料, 而n型掺杂中掺杂剂的角色类似于无机半导体器件的施主材料。在制作小分子OLEDs时，通过主体OLEDs材料与p型或者n型掺杂剂共蒸，形成p型或n型掺杂的空穴和电子传输层，这类传输层结构可使材料电导率提高几个数量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这种结合p型和n型材料掺杂的空穴和电子传输层，得到的OLEDs器件也称作p-i-n（或者PIN）结构的OLEDs器件。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　p型、n型掺杂原理" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "在无机半导体中，常常采用n型或p型掺杂来改变材料的载流子浓度及导电性。类似的n型和p型掺杂同样可以发生在有机半导体中，掺杂所产生的载流子称为掺杂载流子，其原理如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "。以p型掺杂为例，掺杂剂客体材料（类似硼受主）掺入有机主体材料（类似本征硅）中，p型掺杂剂的导带或最低空置分子轨道（LUMO）能级很容易接受主体材料最高占据分子轨道（HOMO）能级（或价带）中的电子。通过热激活过程，主体材料HOMO能级处的电子转移到掺杂剂的导带或LUMO能级中，从而使主体材料HOMO能级处产生对应的空穴，主体材料中的空穴浓度提高，形成了以空穴为多数载流子的p型半导体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。n型掺杂与p型掺杂不同之处在于，n型掺杂剂的价带或HOMO能级处的电子更容易转移到主体材料的LUMO能级中，从而形成以电子为多数载流子的n型半导体。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "有机半导体p型和n型掺杂机理" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Mechanism of p-type and n-type doping of organic semiconductors" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941805&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941808&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941807&type=", "width": "163.00000000", "height": "32.76948547", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "因此，选用的p型（n型）掺杂剂通常具有强氧化性（强还原性），有很高（很低）的电子亲和能（Electron affinity，EA）或功函数（Work function，WF）。至今为止，已经有很多n型与p型的掺杂材料被报道，其中常见p型掺杂材料为金属氧化物（如MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Fe" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）、金属氟化物（如SrF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）和有机物（HAT-CN）等，常见n型掺杂材料为化学性质活泼的碱金属单质（如Li、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）及其碳酸盐（如Li" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）、碱金属氮、氟化物（如CsN" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、 CsF）以及有机物（[RuCp*Mes]" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）等。最近，Alberto等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "概述了迄今为止有机材料电子掺杂的重要进展，对掺杂如何增强各种发光器件的工作特性进行了总结综述。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　p⁃型掺杂在空穴传输层中的应用" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "Walzer 等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对p型掺杂空穴传输层的机理与器件性能（驱动电压、发光亮度、功率效率等）的提高进行了详细综述，指出在HTL中掺杂一定量的 p型掺杂剂可显著地提高空穴载流子迁移率及其浓度，提高HTL的空穴传输性能及其导电性，降低器件驱动电压，提高空穴浓度，增加激子的数量，最终显著提高器件的发光亮度和功率效率。Kröger等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "分析了CBP材料掺杂p型MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料使薄膜导电性提升的原因，认为掺杂HTL导电性增加是由于电子从CBP的HOMO能级向MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的导带底的转移过程中产生了更多的空穴导致的。对MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "掺杂CBP层的电子结构的UPS测量的总结表明，随着掺杂剂浓度的增加，费米能级（" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "）迅速向HOMO能级移动，电导率也随之增加。在掺杂浓度较高时，掺杂薄膜的费米能级被“钉扎”在 HOMO能级约为0.1~1 eV 以上的位置" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了无机掺杂剂，有机掺杂剂也逐渐受到人们的重视。Gao等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对NPB中做p型掺杂的无机（MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）和有机（HAT-CN）电子受体材料进行了比较研究。发现HAT-CN掺杂的HTL在器件效率和稳定性方面都优于MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，这缘于HAT-CN更低的蒸发温度带来更低的空穴注入势垒、更平滑的表面形貌和较小的光学损耗。最近，为实现性能更好且低廉的p型掺杂，Sakai等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了二甲基亚砜加合物（DMSO‐HBr加合物）可作为有机半导体广泛运用的有效且清洁的p型掺杂剂。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　n⁃型掺杂在电子传输层中的应用" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "与传统的活性金属作为n型掺杂剂相比，碱金属化合物由于其材料加工简单和操作稳定性高，是更有效的实现大批量n型掺杂的方法。Cai等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对ETL中Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为n型掺杂剂的机理进行了研究，发现随着掺杂浓度的增加，Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "掺杂的BPhen膜中费米能级向LUMO能级移动，导致ETL中的电子浓度增加，电子注入势垒高度降低，这证明了n型电掺杂效应。Wei等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了CsF掺杂对Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的电子传输增强作用，对不同CsF掺杂浓度的Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层进行了表征，发现具有适当掺杂浓度ETL所制得的OLED具有最好的性能。在较低的掺杂浓度（" }, { "name": "text", "data": "<" }, { "name": "text", "data": "2%）下，Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的费米能级迅速远离HOMO能级；在较高掺杂浓度（" }, { "name": "text", "data": ">" }, { "name": "text", "data": "2%）时，费米能级偏移较小。Bin等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "则提供了一种新的掺杂方法，通过设计多功能ETM的原位反应，将空气中稳定的金属（如银）激活为有效的n型掺杂剂，其还原电位甚至超过Cs（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "）。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）不同金属的电离能；（b）无掺杂、Cs掺杂和Ag掺杂p-MeO-Phen薄膜能级示意图" }, { "name": "sup", "data": [ { "name": "text", "data": " ［" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）The ionization energies of different metals. （b）The schematic energy-level diagrams of pristine， Cs-doped and Ag-doped p-MeO-Phen films" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941810&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941814&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941812&type=", "width": "141.78761292", "height": "43.80892944", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "除了高活性碱金属及其化合物的掺杂，Lin等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 首次提出可裂解且在空气中稳定的二聚体掺杂剂，实现了高效的n型掺杂，其还原电势超出二聚体有效还原强度的热力学范围。Smith等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用空气中稳定的钌二聚体[RuCp*Mes]" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "掺杂到F8BT中，使费米能级移动到F8BT LUMO能级的0.25 eV范围内，实现了n型掺杂（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "）。掺杂和紫外光照射后，[RuCp*Mes]" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "掺杂的ETL电导率增加了4个数量级，组成的绿色磷光OLED亮度比未掺杂的提高3个数量级。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "二聚体掺杂剂［RuCp*Mes］" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（a）和主体材料（F8BT）（b）的化学结构；（c）未掺杂和掺杂的F8BT薄膜之间费米能级位移示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Chemical structures of the dimer dopant ［RuCp*Mes］" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（a）" }, { "name": "sub", "data": [ { "name": "text", "data": " " } ] }, { "name": "text", "data": "and host material（F8BT） （b）. （c）Schematic representation of the shift in the Fermi level between the undoped and doped F8BT films" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941816&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941820&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941818&type=", "width": "148.46179199", "height": "48.23675537", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　p⁃i⁃n结构OLED器件" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "p型掺杂结合n型掺杂的 p-i-n 型器件结构可进一步提高OLEDs的综合性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R37", "R38", "R39" ], "text": "37-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如Cao等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用无机的MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和Ca作为n型和p型掺杂剂通过共蒸发结合到CBP中，当掺杂浓度提高到MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的10%和Ca的6%以上时，CBP单载流子器件中的电荷传输和注入都显著改善，此时的p-i-n同质结蓝色荧光OLED具有1 680 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的亮度，发光效率为3.4 cd/A，在50 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下的寿命为3.1 h。He等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过在有机材料MeO-TPD中掺杂F" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "-TCNQ构成p-型掺杂层，在Bphen中掺杂Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "构成n-型掺杂层，制备了高效率p-i-n 型绿色磷光发射器件。由于改善了空穴以及电子的载流子传输性能，器件的功率效率达到77 lm/W，外量子效率达到19.3%。最近，Smith等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "运用有机分子氧化剂（CN6-CP）和还原剂（[RuCp*Mes]" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）基于大间隙的POPy" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "有机材料（3.6 eV）制备了同质结的p-i-n二极管,在正向偏压下实现了蓝光发射（" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "）。CN" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "-CP的p型掺杂使得POPy" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的电导率增加了两个数量级，配合前面提到的[RuCp*Mes]" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "n型掺杂，推动了p-i-n结构的发展。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）基于POPy" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的p-i-n OLED；（b）p-i-n 同质结结构示意图；（c）p-i-n POPy" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的分子能级移动示意图；（d）p-i-n二极管的电流密度-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）特性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a）The p-i-n OLED based on POPy" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ". （b）Schematic of the p-i-n homojunction structure. （c）Schematic of the molecular level shift across the p-i-n POPy" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film. （d）Current density " }, { "name": "italic", "data": [ { "name": "text", "data": "vs" } ] }, { "name": "text", "data": " voltage（" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "） of the p-i-n diode" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941822&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941826&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941824&type=", "width": "136.11053467", "height": "86.39135742", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于 p-型和n-型掺杂技术制备简单、效果明显且掺杂剂来源广泛，采用p-i-n结构的OLED器件具有很好的衬底兼容性，一般不受衬底材料所限，这为器件结构的优化与设计提供了便利。最终能实现较低的驱动电压、较高的器件发光效率和较好的器件寿命。所以现阶段，产业上所使用的器件结构均是p-i-n结构，并且相关技术材料也日趋成熟。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　叠层结构" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "随着OLEDs在中小尺寸显示屏中的广泛应用，新型OLED屏幕要求强光下也能正常使用，而中大尺寸OLED屏幕对亮度、寿命提出了更高的要求，因此一种新的OLED结构——叠层OLED结构应运而生。叠层器件结构通过电荷产生层（Charge generation layer, CGL）（又称内部连接层，Intermediate connector）将多个发光单元进行串联连接（" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "），其在2003年首次被日本山形大学Kido发表" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与传统单发光单元器件相比，具有多个发光单元的叠层OLED往往具有成倍的电流效率和发光亮度，在相同亮度下，所需的电流密度也成倍减少；同时多个发光中心层也有利于激子分离，降低了器件内部发光层中的激子密度，有效减弱了磷光发光材料中的T" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] }, { "name": "text", "data": "-T" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] }, { "name": "text", "data": "湮灭，使工作寿命得到明显增长，有效规避了高亮度与长寿命之间的权衡问题。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "叠层结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Schematic diagram of stack structure" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941829&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941831&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941830&type=", "width": "77.71896362", "height": "55.53713989", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在叠层器件结构中，各发光单元的材料结构与常规OLED的相似，而电荷产生层作为各发光单元的连接层最为关键，其性能对叠层OLED具有重要影响。首先，电荷产生层的光学透过率要尽可能大，在可见光范围内必须大于75%，否则会影响器件的光取出，导致器件效率无法成倍提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时电荷产生层还需具有良好的电荷产生和分离能力，以保证载流子能够顺利注入到相邻的发光单元中。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "叠层OLED中使用的电荷产生层通常根据材料结构的不同，可分为金属/金属（或金属氧化物）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、有机/金属" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } } ], "rid": [ "R43", "R44" ], "text": "43-44", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "（或金属氧化物" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } } ], "rid": [ "R45", "R46" ], "text": "45-46", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）、n型掺杂有机/有机" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } } ], "rid": [ "R47", "R48", "R49" ], "text": "47-49", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、n型掺杂有机/p型掺杂有机" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } } ], "rid": [ "R50", "R51", "R52" ], "text": "50-52", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、非掺杂有机/有机" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } } ], "rid": [ "R53", "R54", "R55", "R56", "R57", "R58", "R59", "R60" ], "text": "53-60", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、体异质结" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "或混合连接层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，由于电荷产生层材料结构的不同，其电荷产生与分离机理尚没有统一的答案。Tsutsui等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对电荷产生层Mg∶Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/V" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "进行过深入研究，认为载流子在Mg∶Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与V" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "两者薄膜界面处产生并分离，其中空穴受外加电场作用注入空穴传输层，而电子通过热扩散注入到电子传输层。Yang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用电学和光谱发射特性、界面和电容特性数据，研究了过渡金属氧化物基CGL的电荷产生和分离过程，发现MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层中的电子通过热扩散从各种缺陷状态自发转移到导带，外部电场通过产生的电子和空穴分别从MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "隧穿到相邻的CsN" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "掺杂的BPhen和空穴传输层中，诱导电荷分离（" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "）。Kröger等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于有机/有机掺杂异质结的电荷产生层进行研究，认为在外加电场作用下，所产生的电子从空穴传输材料的HOMO能级隧穿到电子传输材料的LUMO能级上。唐建新课题组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过UPS 对电荷产生层NPB/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Mg∶Bphen的电子结构进行了研究，NPB/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "界面处产生电荷分离，电子可从NPB的HOMO能级跳跃到MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的导带上，Mg∶Bphen有助于电子注入并阻挡阳极侧注入的空穴。2020年，华南理工大学马东阁课题组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "C⁃V" } ] }, { "name": "text", "data": "特性系统研究了由HAT-CN和不同空穴传输材料组成的有机异质结电荷产生机理，揭示了有机异质结中有效电荷产生源于隧穿而不是扩散。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "正向偏压下的电场辅助电荷产生和分离过程示意图。 （1）MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中深缺陷能级中的电子（实心圆）被激发到导带；（2）电子从MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的导带注入到CsN" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶BPhen层的LUMO；（3）空穴（空心圆）从MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的缺陷能级注入NPB的HOMO；（4）电子从NPB的HOMO直接转移到先前提出的MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "导带中" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Schematic electric field-assisted charge generation and separation processes under forward bias. （1）Electrons（solid circle） in deep-lying defect levels within MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " are excited to the conduction band. （2）Electrons are injected from MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "’s conduction band to the LUMO of CsN" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶BPhen layer. （3）Holes（open circle） are injected from defect levels of MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " to NPB’s HOMO. （4）Electrons are transferred directly from NPB’s HOMO into MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "’s conduction band proposed previously" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941832&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941834&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941833&type=", "width": "75.44427490", "height": "53.92892456", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "有机/过渡金属氧化物是电荷产生层的一种常见结构，然而与有机/有机结构相比，金属氧化物较高的蒸发温度会损害电荷产生层的界面，进而影响器件性能。有机材料的空穴传输速率往往比电子传输高几个数量级，因此常在有机电子传输材料中掺杂低功函数金属（如Li" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ag" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）或其化合物（如LiNH" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "N" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）来平衡电荷的传输速率。同时，适当的掺杂还能够调节界面电荷产生处材料的能带，可以相对容易地实现n-CGL的LUMO和p-CGL的HOMO能级差接近于零，从而促进界面处的电荷生成。但是掺杂的物质往往对水氧敏感且容易扩散到相邻有机层材料中，影响器件性能。为此，本课题组也进行了相关研究，提出在电荷产生层中Bphen∶Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " /HAT-CN之间引入0.5 nm的超薄Ag金属层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，获得了与无超薄金属层器件相比更好的器件性能，最大亮度可达到290 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "80" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "=1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）超过了250 h（" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "）。这是由于超薄金属层抑制了Bphen∶Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 与 HAT-CN在界面处的相互扩散, 同时也促进了载流子的生成与传输。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "单层绿光器件（器件A）、无超薄 Ag 金属层串联器件（器件B）和有超薄 Ag 金属层串联器件（器件C）的性能对比" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Performance comparison of single layer green light device（device A）， tandem device without ultra-thin Ag metal layer（device B） and tandem device with ultra-thin Ag metal layer（device C）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941835&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941837&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941836&type=", "width": "131.74725342", "height": "76.10299683", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "最近，叠层器件的新结构或者新材料也被开发出来。Huseynova等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用氟化六氮杂三乙烯（HATNA-F12）取代常见的HAT-CN作为电荷产生层，有效增强了器件的发光效率和外量子效率。Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用非掺杂的电荷产生层（LiF/Al/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/HAT-CN/NPB）成功制备了高效超柔性叠层OLED，该器件具有良好的柔性和耐久性，在弯曲半径~3 mm下循环3 000次，仍能保持初始亮度的~90%。Chan等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于叠层结构制备了高效窄发射纯蓝色超荧光OLED。马东阁课题组设计了一种多周期交替有机异质结作为电荷产生层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "（" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "），将多个HAT-CN/m-MTDATA简单交替串联堆叠，以此制得的叠层红色磷光OLED的EQE达到了31.8%，其高效电荷传输特性得益于高效的电荷生成和复合过程，为制备高性能OLED提供了一种全新的方法。另外，他们还采用HAT-CN/TAPC组成高效平面异质结用于电荷产生层与电荷注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，制得器件的EQE高达42.0%，最大电流效率与功率效率分别为159.5 cd/A和92.7 lm/W，" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "达到1 350 h。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "（a）外加电场下HAT-CN/m-MTDATA多周期交变有机异质结的电荷产生和复合过程； （b）叠层OLED中作为HTL、ETL和CGL的多交替有机异质结工作机理" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "（a）Charge generation and recombination processes of HAT-CN/m-MTDATA multialternating organic heterojunction under applied voltage. （b）Working mechanism of the multialternating organic heterojunction as HTL， ETL and CGL in tandem OLEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941838&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941843&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941841&type=", "width": "135.29733276", "height": "118.78735352", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "上文提到，与单层 OLED 器件相比，叠层结构器件的亮度可提高2倍，使用寿命可延长4倍。而若将叠层OLED显示屏用于智能手机，可降低约30%的耗电量，这意味着手机可以搭载容量更小的电池，机身厚度也可以变得更薄。目前，在量产OLED上采用叠层器件的已有LGD的车载产品；而苹果公司则设计了叠层OLED发光显示面板的驱动芯片和OLED结构与线路，正由三星显示与LGD同时研发量产化技术，该公司计划在未来iPad机型、MacBook 和 iMac 产品上采用双叠层结构的OLED面板；国内的京东方正与手机厂商联合开发应用于手机的叠层OLED显示屏。另一方面，在中大尺寸OLED显示屏以及高像素密度Si基微显示屏中，OLED彩色化方案一般是通过白光加彩色滤光膜实现，白光器件要求高亮度与高稳定性，叠层结构OLED器件将是唯一选择。因此，叠层器件技术是今后高亮度显示与白光OLED器件发展的重要方向，通过人们的深入研究，该技术将会得到进一步发展和完善。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　非掺杂OLED器件" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "不管是p-i-n结构还是叠层结构，为了实现高性能OLED器件，避免发光材料由于浓度引起的猝灭，发光层均采用掺杂技术实现。但是，掺杂技术也有一些缺点，包括：（1）对于不同颜色的掺杂剂，需要选择合适的主体材料；（2）在制备过程中控制共沉积速率和掺杂剂的浓度并不容易（特别是荧光材料0.1%~1%较低的掺杂浓度）；（3）掺杂发光体系还需要考虑主体材料的迁移率、能级等对其他功能的影响；（4）主客体同时使用，无疑增加了成本。而将发光材料制备成超薄（一般" }, { "name": "text", "data": "<" }, { "name": "text", "data": "2 nm）发光层，则不仅可以降低发光材料由于浓度引起的猝灭现象，避免掺杂技术的一些缺点，同时可获得高性能的OLED器件。这种非掺杂型有机发光二极管（DF-OLED）由于制程简单，不需要掺杂，引起了学者们的广泛兴趣" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } } ], "rid": [ "R75", "R76", "R77", "R78" ], "text": "75-78", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2013年，本课题组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次采用非掺杂（Doping free）技术制备白光OLED器件（" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "），优化后的器件得到了较低的驱动电压、良好的显色指数（CRI）值（75）和较高的功率效率（8.9 lm/W），与掺杂器件相比，效率提升约50%，器件性能对比见" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "。该方法可以简化器件结构与制备工艺，同时降低器件工作电压和功耗。2014年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Nature Photonics" } ] }, { "name": "text", "data": "将我们的工作评为研究亮点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，指出我们利用超薄发光层（非掺杂技术）实现了高性能的杂化白光器件，这将很好地促进白光技术在显示和照明中的应用。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "掺杂（左）与非掺杂（右）器件结构对比图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "Structure comparison diagram of doped（left） and doping-free（right） devices" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941845&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941848&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941846&type=", "width": "134.87396240", "height": "51.98533630", "fontsize": "" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "掺杂器件与非掺杂器件性能对比" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Performance comparison of doped devices and doping-free devices" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "note": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "（a）开启电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "）/在 1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时的驱动电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1000" } ] }, { "name": "text", "data": "）；（b）最大电流效率（CE" }, { "name": "sub", "data": [ { "name": "text", "data": "Max" } ] }, { "name": "text", "data": "）/在1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时的CE（CE" }, { "name": "sub", "data": [ { "name": "text", "data": "1000" } ] }, { "name": "text", "data": "）;（c）最大功率效率（PE" }, { "name": "sub", "data": [ { "name": "text", "data": "Max" } ] }, { "name": "text", "data": "）/PE" }, { "name": "sub", "data": [ { "name": "text", "data": "1000" } ] }, { "name": "text", "data": "." } ] } ] } ], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "器件" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on/1000" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "（a）" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "V" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "CE" }, { "name": "sub", "data": [ { "name": "text", "data": "Max/1000" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "（b）" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "PE " }, { "name": "sub", "data": [ { "name": "text", "data": "Max/1000" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "（c）" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（lm·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "非掺杂器件" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.7/4.1" } ] }, { "align": "center", "data": [ { "name": "text", "data": "7.6/6.5" } ] }, { "align": "center", "data": [ { "name": "text", "data": "8.9/5.0" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "掺杂器件" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5.0/8.4" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "10.5/10.4" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5.1/3.9" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941854&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941851&type=", "width": "77.69583130", "height": "17.84652710", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "随后，我们" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用超薄的纳米发光层（" }, { "name": "text", "data": "<" }, { "name": "text", "data": " 1 nm）制备了结构简单、高效率单发光单元的非掺杂型白光有机发光二极管（DF-WOLED）。在该工作中，系统研究了双色和三色器件结构。如" }, { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": "所示，器件结构为ITO/HAT-CN（100 nm）/NPB（15 nm）/TAPC（5 nm）/发光层/TmPyPB（35 nm）/LiF（1 nm）/Al（200 nm）。对于双色WOLED, 器件W21和W22的发光层分别为（Ir（dppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（dpp）（0.9 nm）/TAPC（3.5 nm）/DSA-ph（0.5 nm）和DSA-ph（0.5 nm）/Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（3.5 nm）/Ir（dppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（dpp）（0.9 nm）；对于三色WOLED, 发光层分别为: Ir（piq）" }, { "name": "sub", "data": [ { "name": "text", "data": " 3" } ] }, { "name": "text", "data": "（0.5 nm）/TAPC（1.5 nm）/Ir（dppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（dpp）（0.9 nm）/TAPC（3.5 nm）/DSA-ph（0.5 nm）和DSA-ph（0.5 nm）/Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（3.5 nm）/Ir（dpp）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.9 nm）/Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（3.5 nm）/Ir（piq）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（0.5 nm）。经过优化，双色器件具有电压低、亮度高、色稳定性好以及高效率（~40 lm·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）等特点；三色器件的相关色温（CCT）范围可达2 325~8 011 K，最大CRI为91.3。因此，非掺杂超薄发光层被证明可以开发出工艺简化且高性能的杂化WOLED。" } ] }, { "name": "fig", "data": { "id": "F12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "非掺杂的双色和三色器件结构以及所使用的发光材料分子式" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.12" } ], "title": [ { "name": "text", "data": "Structure of doping-free bicolor and tricolor devices and molecular formula of light emitting materials used" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941855&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941859&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941857&type=", "width": "121.30160522", "height": "75.98950195", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "相较于单发光单元有机发光二极管，尽管叠层有机发光二极管可以有效提升器件性能，特别是器件寿命，但是叠层有机发光二极管的结构由于需要有机层数翻倍，制备过程一般比较复杂。并且，为了获得高性能，叠层有机发光二极管常常采用掺杂技术，这对于串联WOLED，无疑进一步增加了器件的复杂度。我们利用非掺杂技术，通过使用高效的非掺杂电荷生成层将非掺杂的发光层和电荷传输层连接起来，实现了高性能的非掺杂串联WOLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图13", "type": "fig", "rid": "F13", "data": [ { "name": "text", "data": "图13" } ] } }, { "name": "text", "data": "所示，器件W1的非掺杂双色WOLED结构为ITO/HAT-CN（100 nm）/NPB（15 nm）/TAPC（5 nm）/Ir（dmppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（dpp）（0.6 nm）/Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（25 nm）/KBH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "（1 nm）/Ag（0.5 nm）/HAT-CN（130 nm）/NPB（15 nm）/TAPC（5 nm）/FIrpic（0.5 nm）/TmPyPB（50 nm）/LiF（1 nm）/Al（200 nm），其中Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/KBH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "/Ag/HAT-CN/NPB为电荷生成层, Ir（dmppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（dpp）和FIrpic分别为黄色和蓝色发光材料。采用蓝-黄双色结构的非掺杂串联WOLED最高效率可以达到81.2 cd/A, 效率比之前最高的非掺杂WOLED效率（41.3 cd/A）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "高了约2倍；并且比一些掺杂WOLED的效率还要高，器件的最大亮度为44 886 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，是非掺杂白光有机发光中的最高值。" } ] }, { "name": "fig", "data": { "id": "F13", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图13" } ], "title": [ { "name": "text", "data": "串联式WOLED的结构示意图以及优化后的器件性能" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.13" } ], "title": [ { "name": "text", "data": "The schematic structures of tandem WOLED and optimized device performance" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941861&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941865&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941863&type=", "width": "154.06230164", "height": "52.56515503", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "最近，陈旺桥与刘佰全等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "提出了一种基于芘的多环芳烃化合物WOLED的白光分子，并以此实现了高性能非掺杂WOLED。借助于非掺杂器件结构ITO/PEDOT∶PSS/PyS或PyD/TPBi（35 nm）/LiF（1 nm）/Al（100 nm），他们探索了器件的光电性能，如" }, { "name": "xref", "data": { "text": "图14", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14" } ] } }, { "name": "text", "data": "所示。当分子结构从PyS变为PyD时，它们发出的光从绿色变为白色。此外，该器件的CRI达到66并且亮度达到1 135 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "。事实上，该WOLED的性能是溶液处理的非掺杂单白光分子WOLED最好性能之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } } ], "rid": [ "R84", "R85" ], "text": "84-85", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该工作为进一步开发非掺杂OLED器件提供了有益的思路。" } ] }, { "name": "fig", "data": { "id": "F14", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图14" } ], "title": [ { "name": "text", "data": "非掺杂器件结构以及材料分子式和能级图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.14" } ], "title": [ { "name": "text", "data": "The structure diagram of doping-free device， molecular formula of its material and energy level diagram of device components" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941867&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941871&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941869&type=", "width": "133.23968506", "height": "78.05981445", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "不过，这类非掺杂器件，特别是在制备白光器件过程中，如何精准控制器件厚度以及限定激子复合区域，对器件工艺以及器件设计提出了新的挑战。同时,非掺杂器件由于采用了超薄的发光层，会导致激子复合区域较窄，激子密度比较高，这容易使器件效率滚降严重以及影响器件工作寿命，这类问题也需要科研工作者关注。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "6　OLED显示驱动技术" } ], "level": "1", "id": "s6" } }, { "name": "p", "data": [ { "name": "text", "data": "前面提到，OLED 是载流子注入型发光器件，其发光亮度与电流成正比，因此控制OLED电流的大小，就可以控制OLED亮暗程度，用于显示时可实现像素的灰阶调控。控制电流的电路称为驱动电路，OLED驱动电路一般可分为两种：无源（被动式）矩阵驱动（PMOLED）和有源（主动式）矩阵驱动（AMOLED）。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "相对于AMOLED技术，PMOLED由于制作成本及技术门槛较低（两者结构对比示意图见" }, { "name": "xref", "data": { "text": "图15", "type": "fig", "rid": "F15", "data": [ { "name": "text", "data": "图15" } ] } }, { "name": "text", "data": "），率先在产业上获得了应用。目前PMOLED在汽车、消费类电子（MP3、电子烟）、医疗仪器、工控仪表、智能监控、穿戴设备等行业有着广泛的应用。但受制于PMOLED的驱动方式，其驱动电流峰值较高，电路内阻损耗大，不适用于高分辨率或大尺寸显示产品。 换而言之，PMOLED只适合在低分辨率的小尺寸市场进行大规模应用，当显示尺寸变大时，PMOLED将会出现功耗增大、寿命降低等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R16", "R17" ], "text": "16-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而AMOLED 驱动电流峰值相对较低，功耗低，适用于高分辨率或大尺寸显示产品。由于显示发展方向是高分辨率、低功耗、大尺寸，因此本节将主要讨论AMOLED的驱动技术。" } ] }, { "name": "fig", "data": { "id": "F15", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图15" } ], "title": [ { "name": "text", "data": "PMOLED（a）与AMOLED（b）结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.15" } ], "title": [ { "name": "text", "data": "The structure diagram of PMOLED（a） and AMOLED（b）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941873&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941878&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941875&type=", "width": "148.15417480", "height": "40.38598633", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "AMOLED驱动技术中，薄膜晶体管（TFT）决定了提供给OLED器件电流的能力（见" }, { "name": "xref", "data": { "text": "图15", "type": "fig", "rid": "F15", "data": [ { "name": "text", "data": "图15" } ] } }, { "name": "text", "data": "），可实现AMOLED显示驱动的TFT主要有α-Si TFT、LTPS TFT以及MO TFT。α-Si TFT技术最为成熟，在低成本方面具有优势。然而其迁移率太低（一般~0.5 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "），对于电流驱动的AMOLED显示屏，为了获得较大的电流，α-Si TFT的有源层宽长比需要设计得很大，从而限制了像素开口率的提高以及显示分辨率的提高，不适合用于高质量的AMOLED显示。另外，α-Si TFT在长时间工作时，其阈值电压会发生漂移，从而导致AMOLED显示屏亮度衰减较快" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，基于α-Si TFT的驱动技术仅仅出现在早期的AMOLED技术开发中" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R18", "R19" ], "text": "18-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "相比于α-Si，LTPS使用激光晶化工艺获得了更好的电学特性，其电子迁移率可达50~100 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）, 从而带来晶体管尺寸的大幅缩小和分辨率的大幅提升,已经成为中小尺寸高分辨率AMOLED显示的主流背板技术" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } } ], "rid": [ "R87", "R88" ], "text": "87-88", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。三星早期提出了针对AMOLED显示的LTPS设计，由6个TFT与1个电容组成内部补偿像素电路" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其具体的像素电路和驱动时序如" }, { "name": "xref", "data": { "text": "图16", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "图16" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F16", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图16" } ], "title": [ { "name": "text", "data": "6T1C像素电路及驱动时序图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.16" } ], "title": [ { "name": "text", "data": "6T1C pixel circuit and driving sequence diagram" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941880&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941884&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941882&type=", "width": "154.00866699", "height": "62.65333557", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "该像素电路的工作过程分为三个阶段：初始化阶段、编程阶段、发光阶段。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "初始化阶段：scan[" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-1]由高电平变为低电平，emi[" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "]由低电平变为高电平，T34晶体管打开，T35和T36晶体管关闭，T31的栅极电压被放电至Vinit，T31晶体管打开；编程阶段：scan[" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-1]由低电平变为高电平，scan[" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "]由高电平变为低电平，T32和T33晶体管打开，T34晶体管关闭，T31的栅极电压通过T33、T31、T32充电到" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941891&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941887&type=", "width": "18.45733452", "height": "4.91066647", "fontsize": "" } } } ] }, { "name": "text", "data": "；发光阶段：scan[" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "]由低电平变为高电平，emi[" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "]由高电平变为低电平，T32和T33晶体管关闭，T35和T36晶体管打开，OLED开始发光，此时通过OLED的电流见" }, { "name": "xref", "data": { "text": "公式（1）", "type": "disp-formula", "rid": "DF1", "data": [ { "name": "text", "data": "公式（1）" } ] } }, { "name": "text", "data": "：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941896&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941893&type=", "width": "65.02400208", "height": "10.66800022", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941902&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941899&type=", "width": "18.79599953", "height": "7.28133297", "fontsize": "" } } } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "然而，LTPS在关态偏压下，漏极区会形成较高的电场，由于其薄膜晶界缺陷态的存在会辅助隧穿效应的增强，导致较大的反偏漏电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "91", "type": "bibr", "rid": "R91", "data": [ { "name": "text", "data": "91" } ] } } ], "rid": [ "R90", "R91" ], "text": "90-91", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，虽然LTPS-TFT具有较高的迁移率，有助于实现高分辨率、高刷新频率显示，但其较高的漏电流给实现低刷新频率显示驱动带来了挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "91", "type": "bibr", "rid": "R91", "data": [ { "name": "text", "data": "91" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，LTPS-TFT 器件均匀性差、生产工艺复杂、设备投资高、生产成本居高不下, 6代线以上的产线由于成本原因还无法实现量产, 其在大尺寸显示领域的进一步发展受到较大限制。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "MO-TFT技术是近年来备受业界关注并得到大力发展的新型TFT技术，自从2004 年细野秀雄" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在" }, { "name": "italic", "data": [ { "name": "text", "data": "Nature" } ] }, { "name": "text", "data": "杂志上发表非晶In-Ga-Zn-O（α-IGZO）TFT 研究以来，MO-TFT的研究引起了广泛关注。MO-TFT 技术不同于目前α-Si TFT和LTPS-TFT技术，其具有较好的迁移率（5~50 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ", 成膜可使用物理气相沉积（PVD），制作工艺简单，成本较低，容易实现大面积，并且由于其具有非晶结构，均匀性较好" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } } ], "rid": [ "R93", "R94", "R95", "R96", "R97" ], "text": "93-97", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ", 可以较好地满足高分辨率、大尺寸AMOLED 等新型显示的需求。另外，在工艺方面，MO-TFT与α-Si TFT兼容度高，可以在原有α-Si TFT生产线基础上通过技术改造实现MO-TFT量产，可大幅度节约设备投资、降低生产成本。因此，近年来MO-TFT技术的发展受到业界瞩目，成为研究热点，其性能参数与α-Si TFT和 LTPS-TFT 的比较见" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "α⁃Si TFT、LTPS⁃TFT、MO⁃TFT的性能比较" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Performance comparison of α-Si TFT， LTPS-TFT and MO-TFT" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "薄膜晶体管" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "迁移率/（cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "均匀性" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "稳定性" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "光稳定性" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "光刻次数" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "工艺温度/℃" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "成本/产量" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "适应产线" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "α⁃Si TFT" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.1～0.5" } ] }, { "align": "center", "data": [ { "name": "text", "data": "较好" } ] }, { "align": "center", "data": [ { "name": "text", "data": "较差" } ] }, { "align": "center", "data": [ { "name": "text", "data": "较差" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4～5" } ] }, { "align": "center", "data": [ { "name": "text", "data": "150～350" } ] }, { "align": "center", "data": [ { "name": "text", "data": "低/高" } ] }, { "align": "center", "data": [ { "name": "text", "data": ">10 G" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "LTPS⁃TFT" } ] }, { "align": "center", "data": [ { "name": "text", "data": "50～100" } ] }, { "align": "center", "data": [ { "name": "text", "data": "较差" } ] }, { "align": "center", "data": [ { "name": "text", "data": "好" } ] }, { "align": "center", "data": [ { "name": "text", "data": "较好" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5～11" } ] }, { "align": "center", "data": [ { "name": "text", "data": "350～450" } ] }, { "align": "center", "data": [ { "name": "text", "data": "高/低" } ] }, { "align": "center", "data": [ { "name": "text", "data": "<6 G" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "MO⁃TFT" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "5～50" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "较好" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "较好" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "较好" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "4～6" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "150～350" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "低/高" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": ">10 G" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941908&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941905&type=", "width": "162.79998779", "height": "27.11912155", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "前面提到，LTPS-TFT具有较高的迁移率，有助于实现高分辨率、高帧率显示，但其较高的漏电流对实现低帧率显示驱动带来了挑战。而金属氧化物材料具有较大的禁带宽度、带隙间较低的缺陷态密度和对空穴输运的抑制，MO-TFT具有亚阈值摆幅陡峭、漏电流低的优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。利用MO-TFT的这一特点，苹果公司" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "99", "type": "bibr", "rid": "R99", "data": [ { "name": "text", "data": "99" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "提出了MO和LTPS两者集成的像素电路结构（Low temperature polysilicon and oxide，LTPO），其TFT结构示意图如" }, { "name": "xref", "data": { "text": "图17", "type": "fig", "rid": "F17", "data": [ { "name": "text", "data": "图17" } ] } }, { "name": "text", "data": "。这种混合型态的TFT不仅综合了LTPS与金属氧化物的长处，还可避免两者原有的缺点，见" }, { "name": "xref", "data": { "text": "图18", "type": "fig", "rid": "F18", "data": [ { "name": "text", "data": "图18" } ] } }, { "name": "text", "data": "。LTPS具有快速的切换速度以及良好的电流驱动能力，其通道可设计为PMOS或者NMOS或CMOS型；另外，LTPS与氧化物相比具有较小的寄生电容，因此可以实现较低功耗；而LTPS原本具有电性不均匀以及较大的暗电流等缺点，也可以由具有较佳特性的金属氧化物来实现。" } ] }, { "name": "fig", "data": { "id": "F17", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图17" } ], "title": [ { "name": "text", "data": "苹果公司专利中的LTPO-TFT结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.17" } ], "title": [ { "name": "text", "data": "The structure diagram of LTPO-TFT in Apple's patents" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941911&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941917&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941914&type=", "width": "145.20330811", "height": "58.25067139", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F18", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图18" } ], "title": [ { "name": "text", "data": "LTPO技术结合LTPS以及金属氧化物技术优点" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.18" } ], "title": [ { "name": "text", "data": "LTPO technology combines the advantages of LTPS technology and metal oxide technology" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941920&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941924&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941922&type=", "width": "104.30932617", "height": "36.74533081", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "苹果公司提出了针对 AMOLED 显示的 LTPO 设计，由 7个 TFT 与1个电容（ 7T1C ）组成的内部补偿像素电路" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "91", "type": "bibr", "rid": "R91", "data": [ { "name": "text", "data": "91" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，该技术最早被应用于2018年发布的穿戴产品中。" }, { "name": "xref", "data": { "text": "图19", "type": "fig", "rid": "F19", "data": [ { "name": "text", "data": "图19" } ] } }, { "name": "text", "data": "为苹果公司提出的像素电路及驱动时序，该电路工作过程共分为三个阶段：初始化阶段、数据写入和阈值电压采样阶段、发光阶段。" } ] }, { "name": "fig", "data": { "id": "F19", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图19" } ], "title": [ { "name": "text", "data": "7T1C LTPO方案" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.19" } ], "title": [ { "name": "text", "data": "7T1C LTPO Scheme" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941929&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941935&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941930&type=", "width": "130.69853210", "height": "57.88290405", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "初始化阶段：" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SCAN1" } ] }, { "name": "text", "data": "从低电位变为高电位、" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EM1" } ] }, { "name": "text", "data": "从高电位变为低电位，T" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和T" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "晶体管打开，T" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "晶体管关闭，N" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "节点电位变为" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "INI" } ] }, { "name": "text", "data": "，N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "节点电位变为" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DD" } ] }, { "name": "text", "data": "，T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "晶体管打开；数据写入和阈值电压采样阶段：" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SCAN2" } ] }, { "name": "text", "data": "由低电位变为高电位、" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EM2" } ] }, { "name": "text", "data": "从高电位变为低电位，T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "晶体管打开，T" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "晶体管关闭，在初始化阶段T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、T" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体管都被打开，N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "点的电荷通过T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、T" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体管向" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941941&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941937&type=", "width": "2.37066650", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DATA" } ] }, { "name": "text", "data": "放电，直到T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "晶体管关闭，此时N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "点的电位为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941948&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941944&type=", "width": "17.94933319", "height": "4.91066647", "fontsize": "" } } } ] }, { "name": "text", "data": "，C" }, { "name": "sub", "data": [ { "name": "text", "data": "ST" } ] }, { "name": "text", "data": "电容两端的电压差为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941956&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941951&type=", "width": "25.99266624", "height": "4.91066647", "fontsize": "" } } } ] }, { "name": "text", "data": "；发光阶段：" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SCAN1" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SCAN2" } ] }, { "name": "text", "data": "由高电位变为低电位，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EM1" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EM2" } ] }, { "name": "text", "data": "由低电位变为高电位，T" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、T" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、T" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "晶体管关闭，T" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "、T" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "晶体管打开，OLED开始发光，其中T" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的栅源电压为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941960&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941958&type=", "width": "27.34733391", "height": "4.91066647", "fontsize": "" } } } ] }, { "name": "text", "data": "，因此OLED的发光电流见" }, { "name": "xref", "data": { "text": "公式（2）", "type": "disp-formula", "rid": "DF2", "data": [ { "name": "text", "data": "公式（2）" } ] } }, { "name": "text", "data": "：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941965&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941963&type=", "width": "64.60066223", "height": "10.66800022", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941969&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941967&type=", "width": "18.79599953", "height": "7.28133297", "fontsize": "" } } } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在7T1C像素电路中，T" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体管为金属氧化物TFT，其余晶体管为LTPS TFT；T" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体管的作用是减少N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "节点的漏电，实现低刷新率，其余的LTPS TFT是利用LTPS TFT迁移率高的特性，提高驱动电路的驱动能力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在苹果公司的推动下，韩国三星和LG两家公司布局研发LTPO技术，目前三星和LGD已实现手机LTPO产品量产。随着三星、LGD和苹果在LTPO领域的布局加快，LTPO成为高端移动终端首选，加速了AMOLED面板技术的迭代。特别是国内京东方、维信诺、天马以及华星光电几大主力AMOLED面板产线相继宣布自己的LTPO背板技术AMOLED产品量产或上市，这为LTPO背板技术的应用加速拉开了序幕。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "7　总结与展望" } ], "level": "1", "id": "s7" } }, { "name": "p", "data": [ { "name": "text", "data": "在OLED器件方面，经过多年的发展，其器件结构体系已日趋成熟；但随着新的显示应用对OLED器件提出了更严格的要求，比如高亮度OLED显示屏、量子点OLED显示屏（QD-OLED）、大尺寸OLED显示屏、Micro OLED（即VR/AR）显示屏、透明显示屏、车载显示屏，这些均对OLED器件亮度、寿命提出了更高的要求，需要开发更好的OLED材料、更优的OLED器件结构。而与刚性OLED器件相比，柔性OLED可折叠、可卷曲的特点符合更多的终端智能显示需求，预期将成为未来一段时间内新型显示技术的主流趋势。这对OLED器件，包括衬底和封装薄膜的耐弯折特性也提出了进一步的要求。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于OLED驱动技术来说，LTPS是目前应用于OLED驱动最为成熟的背板技术，其主要应用于对分辨率和电子迁移率要求较高的中小尺寸显示屏；而受限于LTPS所需要的设备以及成本因素，中大尺寸AMOLED所使用的驱动技术则是金属氧化物技术。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "随着便携式设备对显示屏提出的低功耗、高刷新频率、高分辨率（2 k以上）要求，LTPO背板特有的动态低频驱动与低功耗节能技术，则成为不二的选择。目前基于IGZO-TFT的LTPO显示技术已实现小批量量产，但以IGZO氧化物为基础的LTPO仍然面临很多科学与技术的挑战，无法满足高低频（1~180 Hz）自由切换，迫切需要开发与LTPS高迁移率相比拟的新型高迁移率（比如≥40 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": 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