Electrode Preparation of Solar Blind UV Detector Based on Polycrystalline Diamond Films Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "多晶金刚石薄膜日盲紫外探测器件的电极制备" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Electrode Preparation of Solar Blind UV Detector Based on Polycrystalline Diamond Films" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "陈", "givenname": "子依", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Zi-yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "陈子依（1998-），男，湖南株洲人，硕士研究生，2020年于长春理工大学获得学士学位，主要从事新型半导体光电材料与器件的研究。E⁃mail： 2070343042@email.szu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818609&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818613&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818611&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "陈子依" }, { "name": "text", "data": "（1998-），男，湖南株洲人，硕士研究生，2020年于长春理工大学获得学士学位，主要从事新型半导体光电材料与器件的研究。E⁃mail： " }, { "name": "text", "data": "2070343042@email.szu.edu.cn" } ] ] } ], "email": "2070343042@email.szu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "伟亮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Wei-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "荣", "givenname": "曦明", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "RONG", "givenname": "Xi-ming", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "韩", "givenname": "舜", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAN", "givenname": "Shun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "曾", "givenname": "玉祥", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZENG", "givenname": "Yu-xiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "曹", "givenname": "培江", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CAO", "givenname": "Pei-jiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "方", "givenname": "明", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FANG", "givenname": "Ming", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "柳", "givenname": "文军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Wen-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "朱", "givenname": "德亮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHU", "givenname": "De-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "吕", "givenname": "有明", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LYU", "givenname": "You-ming", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： ymlu@szu.edu.cn", "data": [ { "name": "text", "data": "E-mail： ymlu@szu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "吕有明（1963-），男，吉林农安县人，博士，教授，2000年于日本长冈技术科学大学获得博士学位，主要从事宽禁带半导体材料及应用的研究。E⁃mail： ymlu@szu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818616&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818623&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818619&type=", "width": "24.89199829", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "吕有明" }, { "name": "text", "data": "（1963-），男，吉林农安县人，博士，教授，2000年于日本长冈技术科学大学获得博士学位，主要从事宽禁带半导体材料及应用的研究。E⁃mail： " }, { "name": "text", "data": "ymlu@szu.edu.cn" } ] ] } ], "email": "ymlu@szu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "深圳大学 材料学院， 深圳市特种功能材料重点实验室， 广东省功能材料界面工程研究中心， 广东 深圳　518055", "data": [ { "name": "text", "data": "深圳大学 材料学院， 深圳市特种功能材料重点实验室， 广东省功能材料界面工程研究中心， 广东 深圳　518055" } ] }, { "lang": "en", "text": "Shenzhen Key Laboratory of Special Functional Materials， Guangdong Research Center for Interfacial Engineering of Functional Materials， College of Materials Science and Engineering， Shenzhen University， Shenzhen 518055， China", "data": [ { "name": "text", "data": "Shenzhen Key Laboratory of Special Functional Materials， Guangdong Research Center for Interfacial Engineering of Functional Materials， College of Materials Science and Engineering， Shenzhen University， Shenzhen 518055， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "通过在直流等离子体喷射化学气相沉积（DC⁃PJCVD）法生长的多晶金刚石薄膜上制备Au叉指电极，构建了金属⁃半导体⁃金属（MSM）结构的日盲紫外探测器件。研究了不同光刻工艺对制备的金刚石探测器件性能的影响。结果表明，lift⁃off光刻工艺所制备的器件性能明显优于湿法光刻工艺器件，其" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "提高了4.4倍，光暗电流比提高了6.8倍，在25 V电压下响应度提高了9倍，达到了0.15 A/W。在此基础上通过lift⁃off光刻工艺制备了Au、Ti、Ti/Au和Ag四种不同金属的叉指电极，对比了不同金属电极制备的金刚石紫外探测器件的性能差异。其中Ag电极由于存在势垒隧穿效应引起的增益，在四种电极中性能表现最佳，在25 V偏压下其" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "高达0.21 μA，响应度提升到0.78 A/W，性能与已有报道的器件性能相当。与普通Au电极制备的器件相比，其光电流提高了5.2倍，光暗电流比提升了7倍，响应度提高了5.2倍。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "A metal-semiconductor-metal（MSM） structure solar blind UV detector was constructed by preparing interdigital Au electrode on polycrystalline diamond films grown by DC plasma jet chemical vapor deposition （DC-PJCVD）. The effects of different photolithography processes on the performance of the diamond detector were studied， and the results show that the performance of the device prepared by lift-off photolithography is significantly better than that prepared by wet procedure photolithography. The photocurrent of the device is increased by 4.4 times， the light-dark current ratio is increased by 6.8 times， and the responsivity is increased by 9 times to 0.15 A/W at 25 V. On this basis， the interdigitated electrodes of Au， Ti， Ti/Au and Ag were prepared by lift-off photolithography. The performance differences of diamond UV detectors prepared by different metal electrodes were compared. The Ag electrode has the best performance among the four electrodes due to the gain caused by the barrier tunneling effect. At 25 V bias， the light current is 0.21 μA， and responsivity increases to 0.78 A/W. Compared with common Au electrode， the photocurrent， light-dark current ratio and responsivity are increased by 5.2 times， 7 times and 5.2 times respectively." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "金刚石薄膜" } ], [ { "name": "text", "data": "lift-off光刻工艺" } ], [ { "name": "text", "data": "Ag电极" } ], [ { "name": "text", "data": "日盲紫外探测器" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "diamond films" } ], [ { "name": "text", "data": "lift-off photolithography" } ], [ { "name": "text", "data": "Ag electrode" } ], [ { "name": "text", "data": "solar blind ultraviolet detector" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "近年来，宽带隙半导体紫外光电探测器的研究受到广泛关注，特别是工作在220～280 nm的日盲紫外光电探测器因其高灵敏度和低噪声的优点，成为在导弹制导、空间探测以及火灾预警等军事和民用领域的研究热点。其中，主要工作集中在SiC" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、GaN" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、ZnO" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等日盲紫外探测材料上。而最近金刚石" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "作为当今新兴起的第三代半导体材料，由于具有5.45 eV的宽带隙、击穿场强高、载流子迁移率高、介电常数小以及热导率高等优点，使其成为制备在高温、高辐射条件下工作的探测器的热门材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。人们以期利用金刚石的优势能够实现对高能粒子、X射线以及深紫外光的高灵敏探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R7", "R8", "R9", "R10" ], "text": "7-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于成本高和难以获得大尺寸单晶金刚石薄膜，人们把注意力集中在多晶金刚石薄膜的制备及其日盲紫外探测器的研究上，并取得了很大的进展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "R11", "R12", "R13", "R14" ], "text": "11-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，已有研究者报道了多晶金刚石薄膜日盲紫外探测器的紫外/可见光的分辨率达到了10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "数量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。特别是2022年郑州大学单崇新团队" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次成功实现了基于微波等离子体化学气相沉积（MPCVD）技术制备的多晶金刚石光电探测器平面阵列的成像系统，该光电探测器阵列具有良好的均匀性和稳定性，在30 V偏压和218 nm波长下，响应度为255 mA/W，响应速度达到0.51 ms。另外，一些研究者利用金刚石的p型半导体特性，通过与其他n型半导体构建了异质结器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R15", "R16", "R17" ], "text": "15-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，黄健等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用磁控溅射法在p型自支撑金刚石薄膜上制备了n型ZnO薄膜，通过在ZnO薄膜和金刚石薄膜上沉积Al/Au复合电极和Au电极制备了异质结紫外探测器，该器件的正反向电流比值高达8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "，对370 nm紫外光具有光响应。而最近金刚石/β-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "异质结的工作倍受关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，人们在该器件上已经成功实现了自驱动效应。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "尽管人们在金刚石薄膜上已经成功制备了日盲紫外探测器，但由于金刚石日盲紫外探测器的研究起步较晚，目前制备的金刚石探测器件的性能还很低下，其中面临的主要问题是超宽带隙所导致的响应度偏低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一方面需要亟待解决高质量金刚石材料的制备问题，通过掺杂和表面改性提高电学性能；另一方面，由于金刚石本身属于弱p型材料，虽然本征金刚石材料呈现高阻特性，选择何种金属制备电极显得至关重要，而关于系统研究金属电极对探测器性能的影响的工作较少。目前针对金刚石紫外探测器普遍使用功函数较大的金属作为电极材料，包括Au" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ti" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ti/Au" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等金属。其中Au电极是普遍使用的紫外探测器金属电极，但是对于高达5.45 eV禁带宽度的金刚石，并不能与Au的功函数形成良好的适配性；而Ti金属又存在极容易氧化的问题，对器件性能影响较大；在此基础上形成的Ti/Au电极结构虽然能够克服Ti金属氧化的问题，但是其复杂的电极工艺同样是一个不可忽视的缺点。Ag通常作为探测器电极材料被研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其优势在于电极制备工艺简单、成本低，但目前选择Ag作为金刚石探测器件电极材料的研究还鲜有报道。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "因此，本文开展了金刚石薄膜日盲紫外探测器电极工艺的制备研究，首先利用不同光刻工艺在多晶金刚石薄膜上制备了MSM结构的叉指电极，讨论了湿法光刻与lift-off光刻对金刚石紫外探测性能的影响；并在此基础上利用lift-off光刻工艺制备了Au、Ag、Ti、Ti/Au四种电极的器件，对比了不同金属电极制备出的金刚石紫外探测器件的性能差异。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用的样品是通过DC-PJCVD法在800 ℃高温下生长的多晶金刚石薄膜，该方法生产效率高，制备出的金刚石是自支撑的金刚石薄膜，样品的尺寸为1 cm×1 cm×0.3 mm。在进行器件制备之前，我们首先通过X射线衍射（XRD）、原子力显微镜（AFM）、拉曼散射光谱、光致发光（PL）光谱和透射光谱对金刚石样品进行了结构、形貌和光学性能的表征。在清洗好的金刚石样品表面通过lift-off光刻工艺制备了Au的叉指结构电极，构建了MSM型日盲紫外探测器件，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。lift-off光刻工艺由于是在金刚石上显影出相应的图案后，样品再通过热蒸发法进行金属的蒸镀，最后完成去胶得到叉指电极的器件；因而通过光学显微镜观测到lift-off光刻工艺制备的电极形貌完整，插图给出了Au叉指电极实物图，其中叉指的长度为500 μm，叉指间距与叉指宽度都是10 μm。为了说明lift-off光刻工艺对探测器件性能的影响，我们采用湿法光刻工艺在相同的金刚石样品上制备了Au叉指结构电极。lift-off光刻和湿法光刻的工艺类似，都是在光刻产生的图案上得到所需的电极，两种工艺的操作是相同的，区别在于步骤上。湿法光刻是先在衬底上蒸镀金属，再使用光刻法产生图案，最后通过腐蚀液除去多余的金属，再用去胶液去胶，得到器件成品。由于腐蚀液的引入会和蒸镀的电极发生反应，破坏电极的完整性，因此难免会对器件性能产生不利影响。而lift-off光刻是先使用光刻法产生图案，再蒸镀金属电极，最后使用去胶液去除多余的金属和光刻胶，得到器件成品。由于多余的金属是沉积在光刻胶上方，因此用去胶液去除光刻胶时，多余的金属会随光刻胶一起脱落，避免引入腐蚀液，从而达到保护电极、提升器件性能的目的。对不同工艺方法制备的金刚石紫外探测器件，在254 nm紫外灯照射下进行了" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性和响应特性测量，比较了lift-off光刻工艺制备的器件与湿法光刻工艺器件的性能差异。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）lift-off光刻工艺制备的探测器叉指电极结构图；（b）对应的光刻后实物照片。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Structure diagram of the detector interfinger electrode prepared by lift-off lithography process. （b）Photograph of the device electrode after lithography." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818627&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818633&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818630&type=", "width": "114.38964844", "height": "38.44677734", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "最后，我们利用lift-off光刻工艺制备了Ti、Au、Ti/Au和Ag四种金属电极的金刚石探测器件，研究了不同金属电极对制备的金刚石探测器的性能影响。在254 nm紫外灯照射下分别测试了通过热蒸发蒸镀不同金属电极情况下制备出的金刚石紫外探测器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线和响应特性曲线，研究了不同金属电极对器件探测性能的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "通过对金刚石进行一系列表征，确保金刚石样品纯净且平整，符合制备紫外探测器件的要求。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "是金刚石样品的AFM图像、XRD图谱、拉曼散射光谱、光致发光光谱和吸收光谱以及带隙拟合图谱。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "金刚石薄膜的表征结果。 （a）AFM 图像；（b）XRD 图谱；（c）拉曼散射光谱；（d）光致发光光谱；（e）吸收光谱；（f）（" }, { "name": "italic", "data": [ { "name": "text", "data": "αhν" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "随光子能量（" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "）的变化关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Characterization of the diamond thin films. （a）AFM image. （b）XRD spectrum. （c）Raman scattering spectrum. （d）Photoluminescence spectrum. （e）Absorption spectrum. （f）Plot of （" }, { "name": "italic", "data": [ { "name": "text", "data": "αhν" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": " as the function of the photon energy （" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818636&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818643&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818639&type=", "width": "160.31768799", "height": "84.68704224", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）为金刚石薄膜的AFM图像，表面粗糙度为0.788 nm，结果表明所得到的金刚石表面较为平整。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）是多晶金刚石薄膜的XRD图谱，从图中观察到位于43.8°、75.2°、91.4°、119.9°出现4个衍射峰，分别对应立方金刚石结构的（111）、（220）、（311）、（400）晶面，4个衍射峰的半高宽分别为0.53°、0.52°、0.62°、0.48°左右，表明测量的样品为多晶金刚石薄膜。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）显示的是金刚石薄膜样品室温下的拉曼散射光谱，从图中可以明显地看到仅在1 332 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "处有一个尖峰，半高宽为7.8 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，这是典型的金刚石sp" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "杂化形成的碳碳结构,并且没有出现明显的石墨相结构，表明薄膜样品为金刚石结构且具有良好的结晶度。在HeCd激光器325 nm波长的激光激发下，测量了金刚石薄膜的室温下光致发光（PL）光谱，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": " （d）所示。可以发现样品在439 nm以及534 nm处出现两个明显的发光峰，其中位于439 nm处较弱的发光峰来自金刚石薄膜中与位错缺陷态相关的特征发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；而在534 nm处形成的宽峰则通常被认为是与氮和空位形成的缺陷发光中心有关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其中N可能是由于制备过程中由反应室的残余气体引入的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（e）显示了金刚石薄膜样品的吸收光谱，可以发现其在225 nm处有一个很明显的吸收边，并且在272 nm处存在一个肩峰。众多的研究表明" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } } ], "rid": [ "R25", "R26" ], "text": "25-26", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，对于人工合成的金刚石薄膜，在制备过程中会不可避免地引入一些杂质和缺陷态，相应的能级分布于金刚石的带隙中，导致对低于禁带宽度的光子存在一定程度的吸收。因此，来自金刚石中的缺陷态被认为是样品呈现低于带边存在吸收的主要原因，这也可以从" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "（d）的PL光谱中观测到的缺陷和杂质相关的发光得到验证。实验采用的多晶金刚石样品对272~225 nm之间的紫外光有一定吸收，这也解释了后续制备的器件在254 nm波长紫外光照下产生响应的原因。按照公式（" }, { "name": "italic", "data": [ { "name": "text", "data": "αhν" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "）对样品进行了光学带隙拟合，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（f）所示，结果表明对应的带隙能量为5.225 eV。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "给出了由湿法光刻工艺和lift-off光刻工艺制备的金刚石探测器件" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线和响应度曲线，所蒸镀的电极材料为Au电极。可以看到，当电压以1 V的步长从0 V增加到25 V，两个器件的光电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "）与暗电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "）均随着电压的增加而上升。湿法光刻制备的器件（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a））在25 V偏压时其" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "为8.7 nA，光暗电流比为1.85。而采用lift-off工艺制备的器件，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": " （c）所示的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线显示，在25 V偏压下器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "达到39.1 nA，光暗电流比为12.7。可以清楚看到，虽然两种光刻工艺制备的叉指结构尺寸相同，但是结果表明湿法光刻制备的器件性能更低。lift-off和湿法光刻两种工艺使用的是相同的金属材料，并且蒸镀电极的方法也完全相同。然而lift-off光刻中没有引入腐蚀液，避免了腐蚀液的影响；而在湿法光刻中，不同的金属需要用到不同的腐蚀液，这进一步增大了腐蚀液对电极材料的影响。因此在充分考虑整个实验流程之后，我们认为性能差异主要来自于不同的光刻工艺流程。湿法光刻是先蒸镀金属再进行光刻，在刻蚀过程中由于腐蚀液对电极的边缘存在破坏，导致湿法光刻相较于lift-off光刻其金属电极通常呈现出倒梯形的形状，从而极大地影响电极对光生载流子的收集能力。而lift-off光刻工艺由于是先刻蚀图案再蒸镀金属，摒弃了湿法光刻所需要的使用腐蚀液刻蚀金属电极的步骤，使得lift-off光刻所制备的电极附着力更强、形貌更加完整，因此lift-off工艺制备的器件性能普遍优于湿法光刻制备的器件。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "利用不同工艺方法制备金刚石薄膜探测器的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "特性曲线和响应度曲线。 （a）～（b）湿法光刻；（c）～（d）lift-off光刻。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " characteristic curves and responsivity curves of the diamond film detectors prepared by different processes. （a）-（b）Wet lithography. （c）-（d）Lift-off lithography." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818647&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818653&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818651&type=", "width": "141.27148438", "height": "95.77195740", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线，结合测试的光功率（110 μw/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）与有效光照面积，我们可以得到器件的响应度随电压变化的曲线，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）、（d）所示。所有器件的响应度都随着电压的提升而升高，对于湿法光刻工艺（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b））和lift-off光刻工艺（" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": "（d））制备的器件，在25 V偏压下响应度分别为16.6 mA/W和150 mA/W。可以看到，lift-off光刻方法制备的器件响应度性能要远远优于湿法光刻器件性能，其中器件响应度提高了9倍。两种工艺方法制备的金刚石紫外探测器的性能比较如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同工艺方法制备金刚石薄膜探测器的性能比较" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Comparison of performance of the diamond film detectors prepared by different processes" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "是否需要" } ] }, { "name": "p", "data": [ { "name": "text", "data": "腐蚀液" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "光暗" } ] }, { "name": "p", "data": [ { "name": "text", "data": "电流比" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "响应度/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "Lift⁃off光刻" } ] }, { "align": "center", "data": [ { "name": "text", "data": "不需要" } ] }, { "align": "center", "data": [ { "name": "text", "data": "12.7" } ] }, { "align": "center", "data": [ { "name": "text", "data": "150" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "湿法光刻" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "需要" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "1.85" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "16.6" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818669&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818664&type=", "width": "77.69583130", "height": "21.86923218", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "上述研究结果表明，选择Au作为电极材料采用lift-off光刻法制备出来的器件性能要优于湿法光刻器件。由于不同金属电极与金刚石材料形成的接触性质存在差异，为了进一步优化制备的金刚石紫外探测器件的性能，我们尝试用其他金属电极来制备了不同的器件。由于lift-off光刻工艺不需要考虑对金属的刻蚀影响，这为我们选择金属材料带来了方便。因此，我们选择Au、Ag、Ti、Ti/Au四种不同的金属，使用lift-off光刻法制备叉指电极来构建金刚石紫外探测器件。作为对比，本次实验采用的都为同一批金刚石薄膜，制备的叉指电极也具有相同的结构。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "给出了不同金属电极制备的金刚石探测器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线（左）以及响应度曲线（右）。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）是Ti/Au电极制备的金刚石探测器的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特性曲线，可以看到在25 V的偏压下，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "为0.189 μA，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "为3.6 nA，光暗电流比为51.9。而" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": " （b）所示为Ti电极制备的器件" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线，其在25 V偏压下" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "仅为6.6 nA，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "为2.8 nA，光暗电流比为2.36。Au电极修饰的器件" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）所示，25 V电压下器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "为39.1 nA，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "为3.1 nA，光暗电流比为12.7。对于" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": " （d）所示的Ag电极制备的器件" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线，我们注意到当器件" }, { "name": "text", "data": ">" }, { "name": "text", "data": "15 V偏压时" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "出现陡增，在25 V偏压下" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "高达0.21 μA，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "为2.3 nA，光暗电流比达到89。通过对比上述结果可以发现，Ti/Au电极比Ti电极和Au电极的性能更好。而许多文献报道也都采用Ti/Au作为电极制备金刚石器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这是因为Ti的功函数为4.33，与金刚石形成的肖特基势垒很低，易于形成欧姆接触。但是单一金属Ti作为电极在接触空气后容易氧化成TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，电阻值增大，导致TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对光生载流子的阻挡作用更强，界面的分压就会增多，器件内部分压就会减少，器件内部载流子传输效率就会减弱很多。而Ti/Au电极是在蒸镀完20 nm的Ti电极后再蒸镀一层30 nm的Au电极，这样Au电极能够起到保护层的作用，保护Ti电极不被氧化。因此，Ti电极的器件性能会比Au电极更低，而Ti/Au电极的性能最好。我们还发现，Ag电极的光电流与Ti/Au电极处于同一数量级，而Ag电极的暗电流比Ti/Au电极的暗电流更低，因此Ag电极器件具有更大的光暗电流比。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "使用不同金属电极制备的金刚石探测器的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "特性曲线（左）和响应度曲线（右）。 （a）Ti/Au电极；（b）Ti电极；（c）Au电极；（d）Ag电极。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " characteristic curves（left） and responsivity curves（right） of the diamond detectors prepared with different metal electrodes. （a）Ti/Au electrode. （b）Ti electrode. （c）Au electrode. （d）Ag electrode." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818672&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818688&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818680&type=", "width": "161.50009155", "height": "196.83956909", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "我们通过计算给出了不同金属电极制备的金刚石紫外探测器件的响应度随电压变化关系曲线，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": " （a'）、（b'）、（c'）、（d'）所示。结果显示，对于Ti/Au电极、Ti电极、Au电极和Ag电极制备的器件，在25 V偏压下得到的光响应度分别为0.7 A/W、13.2 mA/W、0.15 A/W和0.78 A/W。从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": " （d'）中不难发现，利用Ag电极制备器件的响应度，在电压" }, { "name": "text", "data": ">" }, { "name": "text", "data": "15 V时出现陡增，在四种不同材料电极的比较中，Ag电极的响应度显示出明显的优势。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步解释上述现象，我们给出了Ag电极与金刚石表面接触后的能带结构示意图，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）、（b）所示。其中" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "v" } ] }, { "name": "text", "data": "分别是对应于金刚石导带、费米能级和价带的能级。金刚石薄膜的电子亲和势为0.5 eV，Ag金属的功函数" }, { "name": "italic", "data": [ { "name": "text", "data": "Φ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Ag" } ] }, { "name": "text", "data": "=4.26 eV。当Ag电极与金刚石薄膜接触后，在热平衡的作用下，两者费米能级趋于一致，导致金刚石能级的能带向下弯曲形成具有势垒高度" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "=3.76 eV的空间电荷区（图中阴影），形成肖特基势垒并产生由Ag电极侧指向金刚石侧的内建电场。由于肖特基势垒的存在，导致金刚石内的电子移到Ag电极处十分困难。施加偏压后的器件能带示意图如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）所示，当施加与内建电场方向相同的外加偏压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "后，势垒高度增加，空间电荷区变宽，此时空间电荷区宽度大于电子隧穿的临界厚度，电子无法穿过空间电荷区。金刚石半导体的费米能级比Ag金属的费米能级高出" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "，而外加紫外光照使得器件内部产生大量的光生载流子，空间电荷区变窄，导致其厚度小于电子隧穿的临界厚度，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）红色虚线所示。当外加偏压足够大（" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": ">" }, { "name": "text", "data": "15 V）时，半导体价带顶能量高于金属费米能级，此时金刚石价带中的电子能够顺利地移动到Ag电极侧，并在金刚石内部留下空穴，产生隧穿效应。所以在" }, { "name": "text", "data": ">" }, { "name": "text", "data": "15 V的偏压下，利用Ag电极制备的金刚石器件要比Ti/Au电极制备的金刚石器件具有更加优异的性能。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "金刚石薄膜与Ag电极接触后的能带结构示意图。 （a） 0 V偏压下；（b） 施加" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "偏压下（紫外光照）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Schematic diagram of the energy band structure of the diamond film after contact with Ag electrode. （a）0 V bias. （b）" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": " forward bias（UV⁃irradiation）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818694&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818704&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39818700&type=", "width": "112.28393555", "height": "39.71359253", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文对DC-PJCVD法生长的金刚石薄膜进行了结构、形貌和光学性能表征研究。结果表明，该金刚石薄膜呈现出表面平整的多晶结构，没有其他物相存在；光学性能测量显示该薄膜样品存在大量的N相关的杂质和缺陷态，并且可以在日盲紫外光波段产生明显的吸收。选择Au作为电极材料、通过湿法光刻工艺和lift-off光刻工艺在金刚石多晶薄膜上制备了MSM型的日盲紫外探测器件，对比了不同光刻工艺制备的器件性能。在25 V偏压下，湿法光刻器件和lift-off光刻器件的光暗电流比分别为1.85和12.7，响应度分别为16.6 mA/W和150 mA/W。结果表明，由于lift-off光刻的电极受腐蚀液影响较小，lift-off光刻器件比湿法光刻器件显示出更好的探测性能。利用lift-off光刻工艺选择Au、Ti、Ti/Au和Ag四种金属制备了叉指电极，研究了不同的金属电极对制备的金刚石日盲探测器件性能的影响。结果表明，由于Ag电极与金刚石薄膜之间形成肖特基接触，在大的正向偏压下存在势垒隧穿效应引起的增益，在25 V偏压下" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "高达0.21 μA，响应度达到0.78 A/W，性能与已有报道的器件性能相当，比Au电极器件提高了5.2倍，显示在高压工作下Ag电极制备的金刚石紫外探测器件性能具有更明显的优势。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/" } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "CJL.20220279." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参 考 文 献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BADILA M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BREZEANU G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MILLAN J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Lift-off technology for SiC UV detectors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Diamond Relat. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2000" }, { "name": "text", "data": "， " }, { "name": "text", "data": "9" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3-6" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "994" }, { "name": "text", "data": "-" }, { "name": "text", "data": "997" }, { "name": "text", "data": "." } ], "title": "Lift-off technology for SiC UV detectors" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FLANNERY L B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HARRISON I" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LACKLISON D E" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Fabrication and characterization of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Mater. Sci. Eng. B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "1997" }, { "name": "text", "data": "， " }, { "name": "text", "data": "50" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1-3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "307" }, { "name": "text", "data": "-" }, { "name": "text", "data": "310" }, { "name": "text", "data": "." } ], "title": "Fabrication and characterization of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MOON T H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JEONG M C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LEE W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The fabrication and characterization of ZnO UV detector" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Surf. Sci." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2005" }, { "name": "text", "data": "， " }, { "name": "text", "data": "240" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1-4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "280" }, { "name": "text", "data": "-" }, { "name": "text", "data": "285" }, { "name": "text", "data": "." } ], "title": "The fabrication and characterization of ZnO UV detector" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHONG M Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WEI Z M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MENG X Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-performance single crystalline UV photodetectors of β-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "619" }, { "name": "text", "data": "： " }, { "name": "text", "data": "572" }, { "name": "text", "data": "-" }, { "name": "text", "data": "575" }, { "name": "text", "data": "." } ], "title": "High-performance single crystalline UV photodetectors of β-Ga2O3" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DE SIO A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DONATO M G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "FAGGIO G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Spectral response of large area CVD diamond photoconductors for space applications in the vacuum UV" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Diamond Relat. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2003" }, { "name": "text", "data": "， " }, { "name": "text", "data": "12" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10-11" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1819" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1824" }, { "name": "text", "data": "." } ], "title": "Spectral response of large area CVD diamond photoconductors for space applications in the vacuum UV" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TANKALA K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DEBROY T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ALARM M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Mater. Res." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1990" }, { "name": "text", "data": "， " }, { "name": "text", "data": "5" }, { "name": "text", "data": "（" }, { "name": "text", "data": "11" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2483" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2489" }, { "name": "text", "data": "." } ], "title": "Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG L J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "XIA Y B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SHEN H J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Infrared optical properties of diamond films and electrical properties of CVD diamond detectors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Phys. D： Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2003" }, { "name": "text", "data": "， " }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "20" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2548" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2552" }, { "name": "text", "data": "." } ], "title": "Infrared optical properties of diamond films and electrical properties of CVD diamond detectors" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BIZZARRI A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BOGANI F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BRUZZI M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Luminescence and conductivity studies on CVD diamond exposed to UV light" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nucl. Instrum. Methods Phys. Res. Sec" }, { "name": "text", "data": ". A： Accel.， Spectrom.， Detect. Assoc. Equip.， " }, { "name": "text", "data": "1999" }, { "name": "text", "data": "， " }, { "name": "text", "data": "426" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "169" }, { "name": "text", "data": "-" }, { "name": "text", "data": "172" }, { "name": "text", "data": "." } ], "title": "Luminescence and conductivity studies on CVD diamond exposed to UV light" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "周海洋" }, { "name": "text", "data": "， " }, { "name": "text", "data": "朱晓东" }, { "name": "text", "data": "， " }, { "name": "text", "data": "詹如娟" }, { "name": "text", "data": ". " }, { "name": "text", "data": "CVD金刚石在辐射探测领域中的应用" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "核技术" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2005" }, { "name": "text", "data": "， " }, { "name": "text", "data": "28" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "135" }, { "name": "text", "data": "-" }, { "name": "text", "data": "140" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3321/j.issn:0253-3219.2005.02.012" } ], "href": "http://dx.doi.org/10.3321/j.issn:0253-3219.2005.02.012" } } ], "title": "CVD金刚石在辐射探测领域中的应用" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHOU H Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHU X D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAN R J" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Application of CVD diamond film for radiation detection" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nucl. Tech." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2005" }, { "name": "text", "data": "， " }, { "name": "text", "data": "28" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "135" }, { "name": "text", "data": "-" }, { "name": "text", "data": "140" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3321/j.issn:0253-3219.2005.02.012" } ], "href": "http://dx.doi.org/10.3321/j.issn:0253-3219.2005.02.012" } } ], "title": "Application of CVD diamond film for radiation detection" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DONATO M G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "FAGGIO G" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MARINELLI M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High quality CVD diamond for detection applications： structural characterization" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Diamond Relat. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2001" }, { "name": "text", "data": "， " }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "9-10" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1788" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1793" }, { "name": "text", "data": "." } ], "title": "High quality CVD diamond for detection applications： structural characterization" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LU Y J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIN C N" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Self-powered diamond/β-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " photodetectors for solar-blind imaging" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Mater. Chem. C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "6" }, { "name": "text", "data": "（" }, { "name": "text", "data": "21" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "5727" }, { "name": "text", "data": "-" }, { "name": "text", "data": "5732" }, { "name": "text", "data": "." } ], "title": "Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LU Y J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIAO M Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "3D solar-blind Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " photodetector array realized " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " origami method" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Funct. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "29" }, { "name": "text", "data": "（" }, { "name": "text", "data": "50" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1906040-1-8" }, { "name": "text", "data": "." } ], "title": "3D solar-blind Ga2O3 photodetector array realized via origami method" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ALVAREZ J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GODARD A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KLEIDER J P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Very high UV-visible selectivity in polycrystalline CVD diamond films" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Diamond Relat. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2004" }, { "name": "text", "data": "， " }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4-8" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "881" }, { "name": "text", "data": "-" }, { "name": "text", "data": "885" }, { "name": "text", "data": "." } ], "title": "Very high UV-visible selectivity in polycrystalline CVD diamond films" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG Z F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIN C N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YANG X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Wafer-sized polycrystalline diamond photodetector planar arrays for solar-blind imaging" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Mater. Chem. C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "16" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "6488" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6496" }, { "name": "text", "data": "." } ], "title": "Wafer-sized polycrystalline diamond photodetector planar arrays for solar-blind imaging" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "黄健" }, { "name": "text", "data": "， " }, { "name": "text", "data": "王林军" }, { "name": "text", "data": "， " }, { "name": "text", "data": "唐可" }, { "name": "text", "data": "， " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "氧化锌/金刚石薄膜异质结紫外光探测器" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2011" }, { "name": "text", "data": "， " }, { "name": "text", "data": "32" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "272" }, { "name": "text", "data": "-" }, { "name": "text", "data": "276" }, { "name": "text", "data": "." } ], "title": "氧化锌/金刚石薄膜异质结紫外光探测器" }, { "lang": "en", "text": [ { "name": "text", "data": "HUANG J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG L J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TANG K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultraviolet detector based on ZnO/diamond film heterojunction diode" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2011" }, { "name": "text", "data": "， " }, { "name": "text", "data": "32" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "272" }, { "name": "text", "data": "-" }, { "name": "text", "data": "276" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Ultraviolet detector based on ZnO/diamond film heterojunction diode" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI K Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZANG J H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YANG X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Solar-blind position-sensitive detectors fabricated from β-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/polycrystalline diamond heterojunctions" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Phys. Status Solidi （RRL）" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "， " }, { "name": "text", "data": "15" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2100347-1-6" }, { "name": "text", "data": "." } ], "title": "Solar-blind position-sensitive detectors fabricated from β-Ga2O3/polycrystalline diamond heterojunctions" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHANG X H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG Y F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG X F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "UV-photodetector based on NiO/diamond film" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "112" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "032103-1-5" }, { "name": "text", "data": "." } ], "title": "UV-photodetector based on NiO/diamond film" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIU B J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAO J W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Sens. Actuators A： Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "290" }, { "name": "text", "data": "： " }, { "name": "text", "data": "222" }, { "name": "text", "data": "-" }, { "name": "text", "data": "227" }, { "name": "text", "data": "." } ], "title": "Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HISCOCK J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "COLLINS A T" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Comparison of diamond and silicon ultraviolet photodetectors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Diamond Relat. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1999" }, { "name": "text", "data": "， " }, { "name": "text", "data": "8" }, { "name": "text", "data": "（" }, { "name": "text", "data": "8-9" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1753" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1758" }, { "name": "text", "data": "." } ], "title": "Comparison of diamond and silicon ultraviolet photodetectors" } ] }, { "id": "R20", "label": "20", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ALVAREZ J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIAO M Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KOID Y" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2005" }, { "name": "text", "data": "， " }, { "name": "text", "data": "87" }, { "name": "text", "data": "（" }, { "name": "text", "data": "11" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "113507-1-3" }, { "name": "text", "data": "." } ], "title": "Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond" } ] }, { "id": "R21", "label": "21", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YU L M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YUAN X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ag nanorods assembled with ZnO nanowalls for near-linear high-response UV photodetectors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "830" }, { "name": "text", "data": "： " }, { "name": "text", "data": "154652-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8" }, { "name": "text", "data": "." } ], "title": "Ag nanorods assembled with ZnO nanowalls for near-linear high-response UV photodetectors" } ] }, { "id": "R22", "label": "22", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MARINELLI M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HATTA A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ITO T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Band-A emission in synthetic diamond films： a systematic investigation" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1996" }, { "name": "text", "data": "， " }, { "name": "text", "data": "68" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1631" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1633" }, { "name": "text", "data": "." } ], "title": "Band-A emission in synthetic diamond films： a systematic investigation" } ] }, { "id": "R23", "label": "23", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TERAJI T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YOSHIZAKI S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MITANI S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Transport properties of electron-beam and photo excited carriers in high-quality single-crystalline chemical-vapor-deposition diamond films" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2004" }, { "name": "text", "data": "， " }, { "name": "text", "data": "96" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "7300" }, { "name": "text", "data": "-" }, { "name": "text", "data": "7305" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.1805723" } ], "href": "http://dx.doi.org/10.1063/1.1805723" } } ], "title": "Transport properties of electron-beam and photo excited carriers in high-quality single-crystalline chemical-vapor-deposition diamond films" } ] }, { "id": "R24", "label": "24", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GRAHAM R J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MOUSTAKAS T D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DISKO M M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor deposition" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1991" }, { "name": "text", "data": "， " }, { "name": "text", "data": "69" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "3212" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3218" }, { "name": "text", "data": "." } ], "title": "Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor deposition" } ] }, { "id": "R25", "label": "25", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU J J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHIU D Y T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MORTON D C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Band gap structure and electron emission property of chemical-vapor-deposited diamond films" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Solid⁃State Electron." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2001" }, { "name": "text", "data": "， " }, { "name": "text", "data": "45" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "915" }, { "name": "text", "data": "-" }, { "name": "text", "data": "919" }, { "name": "text", "data": "." } ], "title": "Band gap structure and electron emission property of chemical-vapor-deposited diamond films" } ] }, { "id": "R26", "label": "26", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHU W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KOCHANSKI G P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JIN S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Defect-enhanced electron field emission from chemical vapor deposited diamond" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1995" }, { "name": "text", "data": "， " }, { "name": "text", "data": "78" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2707" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2711" }, { "name": "text", "data": "." } ], "title": "Defect-enhanced electron field emission from chemical vapor deposited diamond" } ] }, { "id": "R27", "label": "27", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DAI B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "RALCHENKO V" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Single crystal diamond UV detector with a groove-shaped electrode structure and enhanced sensitivity" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Sens. Actuators A： Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "259" }, { "name": "text", "data": "： " }, { "name": "text", "data": "121" }, { "name": "text", "data": "-" }, { "name": "text", "data": "126" }, { "name": "text", "data": "." } ], "title": "Single crystal diamond UV detector with a groove-shaped electrode structure and enhanced sensitivity" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220279", "clc": [ [ { "name": "text", "data": "O482.31" } ], [ { "name": "text", "data": "TN36" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032（2022）12-1974-09", "citeme": [ { "data": [ { "name": "text", "data": "陈子依,张伟亮,荣曦明等.多晶金刚石薄膜日盲紫外探测器件的电极制备[J].发光学报,2022,43(12):1974-1982." } ], "text": "陈子依,张伟亮,荣曦明等.多晶金刚石薄膜日盲紫外探测器件的电极制备[J].发光学报,2022,43(12):1974-1982." }, { "data": [ { "name": "text", "data": "CHEN Zi-yi,ZHANG Wei-liang,RONG Xi-ming,et al.Electrode Preparation of Solar Blind UV Detector Based on Polycrystalline Diamond Films[J].Chinese Journal of Luminescence,2022,43(12):1974-1982." } ], "text": "CHEN Zi-yi,ZHANG Wei-liang,RONG Xi-ming,et al.Electrode Preparation of Solar Blind UV Detector Based on Polycrystalline Diamond Films[J].Chinese Journal of Luminescence,2022,43(12):1974-1982." } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（51872187，11774241，12074263，21805194）； 广东省自然科学基金（2021A1515012013）； 深圳市学科布局项目（JCYJ20180508163404043，JCYJ2018030507182248925）资助" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China（51872187，11774241，12074263，21805194）； The Natural Science Foundation of Guangdong Province（2021A1515012013）； The Fundamental Research Project of Shenzhen（JCYJ⁃20180508163404043，JCYJ2018030507182248925）" } ] } ], "history": { "received": "2022-07-22", "revised": "2022-08-04", "ppub": "2022-12-05", "opub": "2023-02-13" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "12", "volume": "43", "originalSource": [] }