Dual-wavelength Emission of Vertical External Cavity Surface Emitting Laser with Single Gain Chip Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "单片双波长输出垂直外腔面发射激光器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Dual-wavelength Emission of Vertical External Cavity Surface Emitting Laser with Single Gain Chip" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "张", "givenname": "志军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Zhi-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "张志军（1983-），男，黑龙江北安人，博士，副教授，2013年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事激光雷达智能感知技术在消费电子、自动驾驶等领域应用的研究。E⁃mail: lky91855@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865670&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865676&type=", "big": 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"role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： zjw1985@ciomp.ac.cn", "data": [ { "name": "text", "data": "E-mail： zjw1985@ciomp.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "张建伟（1985-），男，山东济宁人，博士，研究员，2013年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高性能微腔面发射激光器及其模式调控的研究。E⁃mail: zjw1985@ciomp.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865679&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865682&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865680&type=", "width": "24.89199829", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "张建伟" }, { "name": "text", "data": "（1985-），男，山东济宁人，博士，研究员，2013年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事高性能微腔面发射激光器及其模式调控的研究。E⁃mail: " }, { "name": "text", "data": "zjw1985@ciomp.ac.cn" } ] ] } ], "email": "zjw1985@ciomp.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "继业", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Ji-ye", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "卓", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Zhuo", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" }, { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "娜", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Na", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "韩", "givenname": "召", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAN", "givenname": "Zhao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "文义", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Wen-yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "冯", "givenname": "暖", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FENG", "givenname": "Nuan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "宁", "givenname": "永强", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "NING", "givenname": "Yong-qiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "立军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Li-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "辽宁科技学院电气与信息工程学院 机器人工程系， 辽宁 本溪　117004", "data": [ { "name": "text", "data": "辽宁科技学院电气与信息工程学院 机器人工程系， 辽宁 本溪　117004" } ] }, { "lang": "en", "label": "1", "text": "Robot Engineering， School of Electrical and Information Engineering， Liaoning Institute of Science and Technology， Benxi 117004， China", "data": [ { "name": "text", "data": "Robot Engineering， School of Electrical and Information Engineering， Liaoning Institute of Science and Technology， Benxi 117004， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "华晨宝马汽车有限公司， 辽宁 沈阳　110000", "data": [ { "name": "text", "data": "华晨宝马汽车有限公司， 辽宁 沈阳　110000" } ] }, { "lang": "en", "label": "2", "text": "BMW Brilliance Automobile Co.， Ltd.， Shenyang 110000， China", "data": [ { "name": "text", "data": "BMW Brilliance Automobile Co.， Ltd.， Shenyang 110000， China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室， 吉林 长春　130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室， 吉林 长春　130033" } ] }, { "lang": "en", "label": "3", "text": "State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "中国科学院大学 材料科学与光电技术学院， 北京　100049", "data": [ { "name": "text", "data": "中国科学院大学 材料科学与光电技术学院， 北京　100049" } ] }, { "lang": "en", "label": "4", "text": "College of Materials Science and Opto-Electronic Technology， University of Chinese Academy of Sciences， Beijing 100049， China", "data": [ { "name": "text", "data": "College of Materials Science and Opto-Electronic Technology， University of Chinese Academy of Sciences， Beijing 100049， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "报道了利用垂直外腔面发射激光器（Vertical external cavity surface emitting laser，VECSEL）的增益谱与腔模的大失配设计实现VECSEL双波长同时激射的方法，设计了稳定的振荡腔结构，理论预测了这种VECSEL的三种工作状态并进行了实验验证。随着VECSEL泵浦功率增加，增益芯片内部工作温度逐步升高，VECSEL依次出现带边波长激射、双波长激射及腔模波长激射三种工作状态。最初VECSEL的激射波长位于带边模式决定的激光波长（952.7 nm），随着泵浦功率增加，增益芯片热效应增强，腔模波长与带边波长出现模式竞争，此后出现双波长激射现象。双波长峰值强度接近时VECSEL激光输出功率达到359 mW，激光波长分别位于954.2 nm和1 001.2 nm，在该位置附近VECSEL的输出功率曲线呈现明显的二次阈值现象。当泵浦功率持续增加，激光输出波长变为腔模波长激射，激光波长位于1 002.4 nm。在单波长及双波长工作状态下VECSEL的光斑形貌均为高斯形貌的圆形对称激光光束，激光光束发散角半角由5.7°增加到7.9°。这种单芯片双波长输出VECSEL方案未来在抗干扰激光雷达以及频率转换太赫兹激光等方面有着很好的应用潜力。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The dual-wavelength lasing from vertical external cavity surface emitting laser（VECSEL） is realized by the large gain spectra and cavity mode detuning， and the stable external cavity is designed. The emission wavelength can be switched between single-wavelength lasing and dual-wavelength lasing according to our simulation results， and three operation modes are proposed and proved by our experiments. The side-mode of VECSEL with side-mode wavelength appears when the pump power exceeds the threshold power. As the pump power is increased， the rollover of output power can be observed on the power curve. However， when the pump power is further increased， the output power can be increased again， which we called the second-threshold phenomenon. And the dual-wavelength lasing can be observed. The output power can reach 359 mW during the dual-wavelength lasing with the lasing wavelengths located at 954.2 nm and 1 001.2 nm. When the pump power exceeds the second threshold， only one lasing wavelength of 1 002.4 nm can be observed， and this wavelength is the cavity-mode wavelength. The laser spot behaves the circular symmetrical shape with Gaussian morphology at both the single-wavelength and dual-wavelength lasing. The divergence angle of VECSEL is increased from 5.9° to 7.9°， which might be caused by the mode competition between the two modes. The dual-wavelength lasing of VECSEL from single gain chip proposed by us has great potential in the LiDAR and terahertz applications in the future." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "双波长面发射激光器" } ], [ { "name": "text", "data": "模式竞争" } ], [ { "name": "text", "data": "激光雷达" } ], [ { "name": "text", "data": "频率转换" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "dual-wavelength lasing" } ], [ { "name": "text", "data": "mode competition" } ], [ { "name": "text", "data": "LiDAR" } ], [ { "name": "text", "data": "frequency conversion" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "垂直外腔面发射半导体激光器（Vertical external cavity surface emitting laser，VECSEL）兼具半导体激光器的增益可调优点以及固体激光器的高光束质量优点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，VECSEL还具有独特的外腔振荡结构，其内部空气腔可以插入具有频率转换或模式过滤的光学元件，实现具有太赫兹波长输出的高光束质量激光，并可以实现超窄脉冲超高功率激光、极短波长紫外激光等，因而自其诞生以来一直受到广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "VECSEL激光的双波长同时激射是通过频率转换实现太赫兹激光的基础；双波长同时输出及可切换波长的VECSEL激光器还可以有效提高成像系统的抗干扰能力，未来在激光雷达领域也有广阔应用潜力。目前，国际上已经报道了多种可以实现双波长输出的VECSEL结构方案。早期研究中，通过设计两组不同波长增益芯片的共用光路，实现VECSEL双波长激光输出。如Fallahi等提出T型结构的双激光腔结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，该方法需要采用两套泵浦系统与激光振荡系统，光路结构非常复杂。Lu等提出采用具有双波长同时反馈的体布拉格光栅（VBG）代替传统多腔中的多组波长选择光学透镜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，进一步简化了腔型结构。随后，Zhang等提出共用光学腔的串联双增益芯片腔型" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然而在该结构中仍然需要采用两套泵浦系统以及两套增益芯片散热系统。采用单个增益芯片实现VECSEL的双波长输出无疑可以大幅简化整个系统体积。Jasik等报道了带有两组不同发光波长量子阱的增益芯片结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，采用这种设计方法实现了单增益芯片的双波长激射。但是，在这种结构中，由于短波长量子阱发出的激光恰好接近长波长量子阱的能带带边，因而增益芯片内存在严重的短波激光吸收效应，导致双波长激射时两个波长的光谱强度差异很大，并且该效应无法通过外部的参数控制解决。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文提出利用温度调控VECSEL增益芯片增益峰与腔模失配程度的设计思路，实现了单一量子阱组分的增益芯片的双波长激光输出，并且输出的激光波长可以通过调整泵浦功率而进行控制。 主要介绍了温度调控VECSEL增益芯片增益峰与腔模失配程度的设计方法、测试结果与原理分析，最后进行了简要总结。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　理论设计" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　增益与腔模位置设计" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本研究中VECSEL器件的结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示，其中VECSEL的增益芯片结构为典型的半VCSEL激光器结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。增益芯片的发光区采用9个InGaAs量子阱作为增益材料，InGaAs两侧采用GaAsP作为势垒层，同时也作为应变补偿层，补偿由于InGaAs带来的应变效应。增益芯片的DBR（Distributed Bragg reflector）反射镜采用35对周期性的GaAs/AlAs材料，可保证最高反射率达到99.99%。为实现高效的激光振荡，增益芯片有源区（Active region）的光学厚度为半波长的整数倍，驻波波峰设计均位于量子阱位置。由于发光区的光场限制作用，可以在增益芯片的激光反射谱上看到明显的中心凹陷，该位置对应的激光波长称为VECSEL的腔模波长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "VECSEL装置示意图（a）以及增益芯片折射率及驻波分布情况（b）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "The setup of VECSEL used in our work and the refractive index（a） and stand wave within the gain chip（b）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865684&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865688&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865686&type=", "width": "75.38635254", "height": "88.40562439", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "增益芯片反射谱（红线）及量子阱增益谱（蓝线）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "The reflectivity spectrum of gain chip（red line） and the gain spectrum of quantum wells（blue line）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865689&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865691&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865690&type=", "width": "73.50646973", "height": "47.82794189", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中增益芯片的反射谱可以看出，反射谱在980 nm附近有明显凹陷，该处对应的激光波长即为腔模波长，本结构腔模波长位于980 nm附近。常规VECSEL的增益芯片的InGaAs量子阱增益谱位置一般位于腔模波长附近，以保证腔模波长得到足够大的腔模增益。在本研究中，我们将InGaAs增益谱的峰值波长相对腔模位置进行大幅蓝移，见" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中蓝色增益谱，其峰值位置位于955 nm附近，与腔模波长位置相差约为25 nm，我们称这种设计理念为增益‐腔模大失配的设计" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中，由于增益谱距离腔模位置较远，增益谱的谱宽无法覆盖腔模波长位置，因此增益芯片的腔模波长对应的增益（也称为腔模增益）数值极低。对于增益芯片，由于其底部具有高反射的DBR反射镜结构，因而在反射带附近的位置一旦获得足够的光增益，便可以形成激光振荡激射。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中，增益芯片的反射带左侧位置明显可以获取更大的增益，我们称该增益为反射带的带边增益。由于此时带边增益远高于腔模增益，因而可以预测此时在激光腔内振荡的激光波长将会首先出现在反射带带边位置。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于InGaAs量子阱结构，温度升高将造成其能带带隙收缩，对应的发光峰向长波方向漂移（红移）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且整个量子阱的增益谱也将随工作温度变化红移。模拟的InGaAs量子阱增益谱随工作温度的变化情况如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。随着温度升高，增益光谱快速红移，增益谱峰值波长随工作温度的温漂速率约为0.33 nm/K；在红移的同时，量子阱增益谱形状变化很小，但是增益峰值出现了快速衰减。对于整个增益芯片来说，其反射谱取决于组成DBR以及发光区的半导体材料折射率，而DBR中的GaAs/AlAs材料以及发光区的InGaAs与GaAsP等材料的折射率稳定性很好，随工作温度的变化约为（1.74~2.04）×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "/K左右" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因而增益芯片反射谱的温度漂移系数极小，约为0.06 nm/K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中增益谱与反射带大失配的器件结构可以推测，随着增益芯片温度的升高，增益谱将迅速接近腔模位置，对应的腔模增益将逐步增加，而带边增益逐步降低。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "量子阱增益谱随工作温度的变化情况" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "The influence of temperature on the gain spectra of quantum well" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865692&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865695&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865694&type=", "width": "63.90661621", "height": "48.68054199", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为评估增益芯片结构有效增益随工作温度的变化关系，我们计算了不同工作温度下带边增益与腔模增益系数随温度的变化关系，见" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "。从图中可以看出，当工作温度较低时，带边增益数值要远高于腔模增益，这是因为" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中增益谱相对反射谱腔模位置有大的失配。随着温度升高，带边增益系数迅速降低，而这是由于增益谱温漂速率远大于带边波长造成的。在温度超过310 K时，带边增益迅速降低，其增益数值将不足以支撑带边波长激射。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "带边模式增益与腔模增益随工作温度的变化" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "The band-edge gain and cavity-mode gain of our structure changing with the operating temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865696&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865699&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865697&type=", "width": "71.36203003", "height": "50.99340820", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中可以看出，腔模增益随温度的变化趋势与带边增益变化趋势恰好相反。当温度较低时，腔模增益很小，难以支撑腔模波长激射；随着温度升高，增益谱随工作温度升高快速红移，而由于腔模波长的温度漂移系数比增益谱小了近一个量级，这会使得" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中的增益谱向着较长的腔模波长位置快速移动，因此在温度升高时腔模增益数值也将相应地增加。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中带边增益与腔模增益的变化趋势可以预测，当温度较低时，VECSEL将出现只有带边波长激射的现象。当采用较高泵浦功率泵浦增益芯片时，由于增益芯片大的产热量造成自身温度升高，因此带边波长激射的激光功率将逐步饱和。当泵浦功率增加到一定程度，腔模增益将达到与带边增益接近的水平，此时将会出现两个波长同时激射的现象，该位置如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。随着泵浦功率进一步增加，带边波长所能获得的增益快速衰减，此时将只有腔模波长可以正常激射。因此，可以预测，我们提出的这种增益谱与腔模大失配的增益芯片结构通过调整泵浦光功率将可以实现带边波长激射、双波长激射以及腔模波长激射三种工作状态。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　振荡激光腔设计" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "直行腔结构的VECSEL只需要调整输出镜片的位置即可实现腔内激光的有效振荡，是最为简洁实用的外腔结构。本研究选择如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示的直行腔结构来验证增益芯片工作效果。为满足外腔振荡的稳定条件，需将输出镜片的曲率半径、空气腔腔长与泵浦光斑尺寸三者配合。在实验验证中，我们采用曲率半径为50 mm的平凹输出镜片，理论模拟了实现稳定激光振荡时泵浦光斑尺寸与空气腔长的关系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。本研究中，我们采用凯普林公司的150 μm光纤输出808 nm半导体激光器模块作为增益芯片泵浦源，采用一组成像镜组将泵浦光照射到增益芯片上，因而增益芯片上的光斑尺寸也为150 μm。根据" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中所计算的稳定振荡关系，对应的激光腔长为42 mm。实际调试过程中，需要前后移动外腔镜以使得腔长与增益得到最佳匹配。同时，对于输出镜镜片的倾角也应该实时调试，因为镜片与增益芯片同轴与否将会对输出光束的质量产生较大影响。对由增益芯片与平凹镜组成的直行空气腔内部的光束传输情况进行了模拟" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，见" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "插图。插图中的红色填充部分为光束分布区域，光束最左侧位置为增益芯片，光束直径为150 μm；光束最右侧位置为平凹镜片位置，为方便计算，将平凹镜片等效成了对光场有会聚作用的平面。可以看出，激光光场在空气腔内形成了稳定的振荡分布，并且由于光场在空气腔传输时有一定的发散，光斑尺寸在平凹镜位置处增大至接近400 μm。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "输出镜曲率半径5 cm时，稳定振荡时直型腔泵浦光斑尺寸与外部空气腔腔长的关系，插图为本研究所用直型腔内部光场分布模拟结果。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "The relationship of pumping spot on the gain chip and the length of line-shape cavity when the curvature of concave mirror is 5 cm， inserted figure is the simulation result of the optical field distribution within the external cavity." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865701&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865704&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865702&type=", "width": "71.19537354", "height": "51.25012207", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "制备增益芯片后，采用808 nm泵浦源照射增益芯片并直接捕捉从增益芯片正面发出的光谱，增益芯片基底温度控制在0 ℃。我们通过改变泵浦功率得到不同泵浦功率下增益芯片的发光光谱，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。为方便对比发光光谱，我们对发光强度进行了归一化处理。在三种不同泵浦功率下，增益芯片的发光光谱均出现了两个相距较远的波长峰，分别位于953 nm与995 nm附近。增益芯片的发光波长比" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中所设计的带边波长及腔模位置略长，这说明增益芯片外延生长过程中的厚度比设计值略大。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同泵浦功率下增益芯片正面的归一化光致发光光谱（PL光谱），增益芯片基底温度为0 ℃。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "The normalized photoluminescence spectra of gain chip under different pumping powers at the temperature of 0 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865706&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865710&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865708&type=", "width": "70.80633545", "height": "50.11407471", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中随着泵浦功率的变化，增益芯片PL光谱中的两个主波长相对发光强度出现明显差异。当泵浦光功率为10 W时，950 nm位置处的发光波长光强明显要大于980 nm位置处的光强。而当泵浦功率增加到17 W时，两个波长位置处的PL光谱强度近乎一致。随着泵浦功率增加到25 W，980 nm位置的光强强度增加，大于950 nm位置处的光强。这与我们前述分析的" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中的发光过程是一致的。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "将制备的增益芯片固定到控温0 ℃的基座后，采用透射率3%的平凹外腔镜进行外腔调试，实现激光输出，并获得了输出激光与泵浦激光的功率曲线以及在不同泵浦功率下的激光光谱，如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）VECSEL系统激光功率与泵浦功率关系曲线；（b）不同泵浦功率下的激光光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "（a）The relationship of the output power changing with the pumping power. （b）The lasing spectra under different pumping powers." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865711&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865714&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865713&type=", "width": "74.92739868", "height": "102.89038086", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）可以看出，VECSEL系统的输出功率曲线与常规报道有明显不同，出现了两次阈值现象以及功率饱和现象。当VECSEL的泵浦光功率在5 W左右时激光系统开始激射，随着泵浦功率的增加，激光输出功率也逐步增加。当泵浦功率达到15 W时，输出功率曲线出现热饱和，并随后出现功率衰减。然而当泵浦功率超过17.2 W时，输出功率曲线随泵浦功率增加而快速增加，出现了二次阈值现象。当泵浦光功率进一步增加至22 W时，输出功率再次饱和，并且随泵浦功率增加输出功率开始衰减。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）中的功率曲线与常规VECSEL的报道有着明显不同。一方面，出现了两次阈值现象，分别位于泵浦功率5 W及泵浦功率17.2 W两个位置，说明有两个不同的模式在不同泵浦功率下出现激射。另一方面，VECSEL的功率曲线有两次功率饱和现象，而第一次功率饱和出现在第二个阈值之前，说明第一次的功率饱和是由于模式竞争效应产生的，而第二次的功率饱和现象是热效应引起的。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）显示了4个不同泵浦功率下的激光光谱情况。通过不同泵浦功率下的激光波长可以看出，整个VECSEL的出光波长有三种状态。当泵浦光源的功率为12 W时，此时的泵浦功率小于第一个热饱和点对应的功率，VECSEL为单波长工作，且激光波长位于952.7 nm，该波长位置为增益芯片的带边波长。当泵浦光源功率达到15 W，此时" }, { "name": "xref", "data": { "text": "图 7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图 7" } ] } }, { "name": "text", "data": "（a）中的出射激光功率达到饱和，在998 nm附近出现了第二个激射波长，该波长为增益芯片的腔模波长，此时带边波长与腔模波长同时存在。随着泵浦功率进一步增加至18 W，泵浦功率已经超过" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）中第二阈值，VECSEL呈现两个强度近似相等的双波长激射现象，此时VECSEL的激光功率为350 mW。双波长激射的波长位置分别位于954.2 nm和1 001.2 nm。该双波长的位置相比泵浦功率为15 W时出现了红移，这是因为泵浦功率增加导致增益芯片内部温度升高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当泵浦功率继续增加至21 W时，VECSEL的输出波长变为单波长输出，此时的激光波长位于1 002.4 nm。上述" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）中VECSEL的激射波长变化趋势与" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中理论分析的带边波长与腔模波长增益变化趋势是吻合的。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）中VECSEL的发光波长与" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中的PL光谱有所差异，主要体现在激光波长位置比" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中的PL光谱位置有所红移，这或许是因为输出外腔镜的反射谱中心更偏向于长波长位置，在激光振荡时，对于长波长的反馈更为明显，导致整个外腔的波长选择向着长波方向偏移。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对VECSEL在两种工作状态下的激光发散角进行测量后，得到其发散角与光斑形貌如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。由插图二维光斑可以看出，输出光斑为圆形对称的高斯光斑形貌。因此我们在" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "中给出了对称光斑水平方向的一维光场分布情况。泵浦功率12 W时激光半高宽发散角为5.7°，激光光斑具有圆形对称性，根据" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "中的光谱可以看出，此时为单波长激射，且激射波长在952.7 nm。当泵浦功率增加至18 W时，此时的激光光谱为双波长激射光谱，激光发散角半高宽增加至7.9°，然而激光光斑仍然具有圆形对称性。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同泵浦功率下VECSEL的激光发散角，插图为不同泵浦功率下的二维光斑。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "The divergence angle of VECSEL under different pumping powers， insert is the two dimensional shape of spot." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865715&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865717&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865716&type=", "width": "64.32594299", "height": "48.68054199", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "双波长激射时发散角增加，一方面是由于此时泵浦功率较高，增益芯片内部温度升高；另一方面或许是由于此时位于双波长工作状态，增益芯片内部的模式竞争较为激烈，两种波长在增益芯片的分布面积有所不同，导致增益区面积增大，然而此时的激光光斑仍然为圆形对称的高斯形状。虽然在上述工作状态下增益芯片内部存在模式竞争，然而由于外腔结构本身的光斑分布是由增益芯片表面泵浦光斑与外腔镜参数决定（见" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "），因而有利于实现模式转换过程中激光光斑仍然保持圆形对称性。这也体现了采用外腔结构可实现良好光斑的优点。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文报道了采用增益谱与反射谱大失配设计理念实现双波长VECSEL的方法，预测这种方法将带来三种不同的波长输出状态，并对其进行了实验验证。结果表明，在低泵浦功率下，由于带边波长获得更高的增益，因而此时的激光波长为带边模式波长。随着泵浦功率继续增加，增益芯片内部温度升高，增益谱向着腔模波长漂移，由此引起带边波长与腔模波长的同时激射，VECSEL出现稳定的双波长激射现象。当泵浦功率进一步增加，增益谱与腔模波长匹配度增加，带边波长被抑制，只有腔模波长可以稳定激射。双波长激射强度接近时，激光功率达到359 mW。通过VECSEL的功率曲线可以观察到由于模式竞争引起的二次阈值现象。VECSEL在不同工作状态下的激光光斑均为圆形对称形貌，激光发散角略有增加，这或许来自波长模式竞争带来的增益区载流子分布面积增大。双波长同时激射的VECSEL可通过频率转换技术实现太赫兹激射，对科技进步有重要意义；波长可切换及双波长激射的VECSEL在多波段激光雷达及抗干扰雷达中将会有很好的应用前景。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220195." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220195." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CALVEZ S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HASTIE J E" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GUINA M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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