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面向Micro⁃LED驱动与检测的单端注入电致发光机理
发光产业及技术前沿 | 更新时间：2023-02-13
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面向Micro⁃LED驱动与检测的单端注入电致发光机理 增强出版
- Single-terminal Injection Electroluminescence Mechanism for Micro-LED Driving and Detection
- 发光学报 2022年 43卷 第12期 (2022)
- 作者机构：福州大学 物理与信息工程学院,福建,福州,350108;中国福建光电信息科学与技术创新实验室,福建,福州,350108
- 作者简介：
- 基金信息：国家重点研发计划(2021YFB3600404)
- DOI：10.37188/CJL.20220270 中图分类号： TN312+.8
纸质出版日期：2022-12-05，
收稿日期：2022-07-09，
修回日期：2022-08-01，
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引用本文
李俊龙,李文豪,苏昊等.面向Micro⁃LED驱动与检测的单端注入电致发光机理[J].发光学报,2022,43(12):1991-2000.
LI Jun-long,LI Wen-hao,SU Hao,et al.Single-terminal Injection Electroluminescence Mechanism for Micro-LED Driving and Detection[J].Chinese Journal of Luminescence,2022,43(12):1991-2000.
李俊龙,李文豪,苏昊等.面向Micro⁃LED驱动与检测的单端注入电致发光机理[J].发光学报,2022,43(12):1991-2000. DOI： 10.37188/CJL.20220270.
LI Jun-long,LI Wen-hao,SU Hao,et al.Single-terminal Injection Electroluminescence Mechanism for Micro-LED Driving and Detection[J].Chinese Journal of Luminescence,2022,43(12):1991-2000. DOI： 10.37188/CJL.20220270.
面向Micro⁃LED驱动与检测的单端注入电致发光机理 增强出版
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"data": "。与普通的LED芯片类似，Micro-LED芯片的发光依赖于外部注入电子、空穴的辐射复合"
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"data": "。因此，Micro-LED芯片的p端、n端电极需要分别与外部驱动线路形成高质量电气连接，即实现Micro-LED芯片的双端接触与双端载流子注入。正是这种双端接触与双端注入原理导致了高分辨率Micro-LED显示屏在制备过程中面临着包括巨量电致发光检测和巨量金属键合在内的两个技术瓶颈"
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"data": "。然而，随着Micro-LED芯片的不断缩小，微型探针的针尖直径也必须相应地缩小至几微米。这对针尖的加工工艺、使用寿命提出更高要求，同时也对检测设备位移部件的精度与移动速度提出了更高要求。另一方面，对于Micro-LED显示屏的设计制备，其关键技术之一是如何实现Micro-LED芯片中微型电极对（n电极与p电极）与相应驱动线路的高质量电气连接"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "15",
"type": "bibr",
"rid": "R15",
"data": [
{
"name": "text",
"data": "15"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
}
],
"rid": [
"R15",
"R16",
"R17"
],
"text": "15-17",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。然而，Micro-LED芯片尺寸的不断缩小和显示屏像素分辨率的不断提高对Micro-LED常用的金属凸点键合技术提出了更高要求"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "18",
"type": "bibr",
"rid": "R18",
"data": [
{
"name": "text",
"data": "18"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
}
],
"rid": [
"R18",
"R19",
"R20"
],
"text": "18-20",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。受限于键合设备精度，要实现Micro-LED芯片电极对与驱动线路焊盘精准连接与键合依然存在很大的技术难度"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
"name": "text",
"data": "21"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "22",
"type": "bibr",
"rid": "R22",
"data": [
{
"name": "text",
"data": "22"
}
]
}
}
],
"rid": [
"R21",
"R22"
],
"text": "21-22",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。立足于新原理与新效应研发新技术是突破巨量电致发光检测和巨量金属键合瓶颈的有效途径。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文提出了一种应用于Micro-LED驱动与电致发光检测的单端接触与单端载流子注入（以下简称单注入）新机理，打破Micro-LED芯片常规的双端接触双端载流子注入模式。与常规Micro-LED芯片不同的是，单注入型Micro-LED与外部驱动引线之间仅存在单端的电学接触，即只需Micro-LED芯片的一个电极与外部引线电极连接，而Micro-LED芯片的另一端采用绝缘层与外部电极隔离开。为了保证单端注入也可以实现稳定的发光，我们利用交流电场驱动载流子周期性的单端注入，从而保证Micro-LED芯片能够实现稳定的周期性发光。单注入型工作模式使得Micro-LED芯片与外部引线（探针）的接触点数量由两个降低至一个，这可以降低电致发光检测和凸点金属键合工艺要求。本文研究单注入型Micro-LED的光电特性，包括电流-驱动电压关系、电流-驱动频率关系、亮度-驱动频率关系等，展示了单注入模式在Micro-LED检测中的应用。基于以上分析测试，提出了单注入型Micro-LED的工作机理模型。本研究有望为Micro-LED芯片的检测、Micro-LED显示屏的设计提供一种新思路。"
}
]
}
]
},
{
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{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2 实 验"
}
],
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"id": "s2"
}
},
{
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"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1 单注入型Micro⁃LED器件制备"
}
],
"level": "2",
"id": "s2a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本实验采用的Micro-LED芯片为自支撑Micro-LED，由厦门乾照光电提供。采用的器件样品结构从下至上分别为：置于底层的氧化铟锡（Indium tin oxide, ITO）下电极，ITO上光刻后形成的环形光刻胶限位区，转移至ITO表面的自支撑Micro-LED芯片，聚对苯二甲酸乙二醇酯（Polyethylene terephthalate，PET）绝缘层,ITO上电极。该器件制备过程如下：在ITO上旋涂光刻正胶（低速500 r/min，时间5 s；高速2 500 r/min，30 s，厚度3 μm），在ITO玻璃板上刻蚀出环形ITO限位区 （160 μm×60 μm）。通过探针将自支撑Micro-LED芯片转移至限位区。将125 μm厚的PET绝缘层覆盖在沉积有Micro-LED芯片的基板上，最后在PET绝缘层上设置ITO上电极。因此，在该结构中，Micro-LED芯片与底部ITO电极之间存在电学接触，而与顶部ITO电极无直接电学接触。"
}
]
}
]
},
{
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"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.2 基于单注入模式的Micro⁃LED检测系统构建"
}
],
"level": "2",
"id": "s2b"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本实验中基于单注入模式的Micro-LED检测系统组成如下：透明导电的样品座，位于样品座底部的显微镜头，用于垂直结构Micro-LED芯片检测的探针，交流驱动电源。首先将制备在蓝宝石衬底上的垂直结构Micro-LED芯片放置在样品座上，交流电源的一个输出连接探针，另一输出连接样品座，探针与Micro-LED芯片的p电极形成稳定的电气连接，形成单注入模式的Micro-LED。其次，显微镜对Micro-LED发光状态进行采集，实现Micro-LED的发光检测。"
}
]
}
]
},
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"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.3 测试仪器"
}
],
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"id": "s2c"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "在测试过程中，交流信号由函数波形发生器（RIGOL DG4162）和功率放大器（Aigtek A122D）产生；输出电压和电流由示波器（RIGOL DS7024）记录，记录的交流电压为峰峰值（"
},
{
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"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "pp"
}
]
},
{
"name": "text",
"data": "），记录的交流电流为最大值；发光亮度由亮度计（NBeT FZ400）测量；发光响应速度由雪崩光电探测器（Thorlabs APD120A2/M）测量；光学显微镜照片由倒置显微镜（DIANYING DYJ-201）采集，。"
}
]
}
]
}
]
},
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"data": {
"title": [
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"name": "text",
"data": "3 结果与讨论"
}
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}
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"name": "sectitle",
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"title": [
{
"name": "text",
"data": "3.1 单注入Micro⁃LED器件结构"
}
],
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},
{
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"data": [
{
"name": "text",
"data": "本实验采用的Micro-LED芯片为自支撑Micro-LED，即从蓝宝石衬底剥离的LED芯片。使用自支撑Micro-LED芯片可保证所有的LED芯片工作在单注入模式，并且通过去除蓝宝石衬底可以有效降低工作电压。该芯片从上至下分别为p-GaN、量子阱发光层、n-GaN，芯片尺寸为40 μm×40 μm，厚度为7 μm，如"
},
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
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"name": "text",
"data": "图1"
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},
{
"name": "text",
"data": "（a）所示。单注入型Micro-LED器件如"
},
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"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
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"name": "text",
"data": "图1"
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]
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},
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"data": "（b）所示，从下至上分别为：ITO下电极、ITO上的环形光刻胶限位区、转移至ITO表面的自支撑Micro-LED芯片、PET绝缘层、ITO上电极，其中器件上下电极之间距离132 μm。该结构中的环形光刻胶限位区用于固定自支撑Micro-LED芯片，并且使得PET绝缘层能够平整地在Micro-LED与环形光刻胶限位区平面上成膜，保证了绝大多数的电场能够均匀地作用于Micro-LED芯片。PET绝缘层用于阻挡载流子的传输，形成单注入型Micro-LED器件。"
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},
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"lang": "zh",
"label": [
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"data": "图1"
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"title": [
{
"name": "text",
"data": "（a）自支撑Micro-LED芯片；（b）单注入型Micro-LED结构示意图。"
}
]
},
{
"lang": "en",
"label": [
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"data": "Fig.1"
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"title": [
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"data": "（a）Microscope image of the self-supported Micro-LED chip. （b）Schematic diagram of a single-injection type Micro-LED."
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"data": "描述了在正弦交流电（300 kHz，70"
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"data": "）驱动下单注入型Micro-LED器件的发光波形图，可以看出其发光波形稍微滞后于电流波形。这是由于绝缘层的存在，在施加信号的瞬间，回路中的电流达到最大，进一步逐渐形成电场，通过电场力作用驱动载流子运动至多量子阱（MQWs）中复合发光。而这个从电场形成到载流子复合发光的时间就是图中所显示的滞后。由图中曲线还可以得出单注入型Micro-LED器件只在正半周期驱动时发光，其机理我们将在后面进行讨论。"
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"data": "正弦交流电驱动下的发光波形与电流"
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"label": [
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"data": "Fig.2"
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"title": [
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"data": "Luminous and current waveform of the device driven by sinusoidal alternating voltage"
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"data": "在传统直流驱动LED中，器件的亮度主要取决于驱动电压、注入电流的大小"
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"data": "。而单注入型Micro-LED器件亮度不仅与驱动电压大小有关，且对驱动信号频率十分敏感"
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"data": "传统直流驱动的LED作为电流驱动型器件，在工作区以内通常表现为电流越大、LED发光亮度越高"
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},
{
"name": "text",
"data": "-"
},
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"name": "xref",
"data": {
"text": "30",
"type": "bibr",
"rid": "R30",
"data": [
{
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"data": "30"
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}
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],
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"R30"
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"text": "29-30",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。交流驱动的单注入型Micro-LED对驱动频率更为敏感。以70"
},
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{
"name": "text",
"data": "V"
}
]
},
{
"name": "sub",
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"data": "pp"
}
]
},
{
"name": "text",
"data": "为例，其开启频率为40 kHz，随着交流电驱动频率的增大，器件内部电流变大，发亮亮度变大。不同于传统直流驱动LED器件的是，交流驱动的单注入型Micro-LED存在最佳的驱动频率。当频率到达300 kHz附近时，亮度达到最大（3.5 μW/cm²）; 当交流驱动频率大于最佳驱动频率时，发光亮度将随着频率的升高而降低，如"
},
{
"name": "xref",
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"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（b）所示。因此交流驱动的Micro-LED的发光亮度不仅取决于注入电流，还受驱动频率的影响"
},
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"data": [
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"data": "["
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"data": {
"text": "31",
"type": "bibr",
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"text": "32",
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]
}
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"data": "。"
}
]
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"data": [
{
"name": "text",
"data": "为了研究单注入型Micro-LED器件结构对性能的影响，借鉴传统LED模型，单注入型Micro-LED可以用RC电路等效，从电路的角度定性地对单注入型Micro-LED的电学性能进行分析。由于绝缘层的存在，外部电极与芯片之间形成等效电容，同时Micro-LED可以等效为电容与电阻的并联。因此，单端载流子注入Micro-LED器件电路模型可以等效为如"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
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"data": "（c）中的RC电路，该电路的阻抗为："
}
]
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},
{
"name": "text",
"data": "为交流信号频率，"
},
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"data": [
{
"name": "text",
"data": "R"
}
]
},
{
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]
},
{
"name": "text",
"data": "为外部串联电阻，"
},
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{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
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"data": "external"
}
]
},
{
"name": "text",
"data": "为绝缘层等效电容，"
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "LED"
}
]
},
{
"name": "text",
"data": "为Micro-LED等效电容，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "LED"
}
]
},
{
"name": "text",
"data": "为Micro-LED等效电阻。"
},
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"data": [
{
"name": "text",
"data": "R"
}
]
},
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"name": "sub",
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"data": "external"
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},
{
"name": "text",
"data": "、"
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"data": [
{
"name": "text",
"data": "C"
}
]
},
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{
"name": "text",
"data": "C"
}
]
},
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"data": [
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"data": "LED"
}
]
},
{
"name": "text",
"data": "和"
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "LED"
}
]
},
{
"name": "text",
"data": "分别为20 000 Ω、5 pF、5×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": " pF和240 Ω。单注入型Micro-LED的"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "LED"
}
]
},
{
"name": "text",
"data": "与"
},
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"data": [
{
"name": "text",
"data": "R"
}
]
},
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"data": [
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"data": "LED"
}
]
},
{
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"data": "与已报道的Micro-LED芯片的"
},
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"data": "C"
}
]
},
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"data": "LED"
}
]
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},
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"data": [
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]
},
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]
},
{
"name": "text",
"data": "相近"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "33",
"type": "bibr",
"rid": "R33",
"data": [
{
"name": "text",
"data": "33"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。由"
},
{
"name": "xref",
"data": {
"text": "公式（1）",
"type": "disp-formula",
"rid": "DF1",
"data": [
{
"name": "text",
"data": "公式（1）"
}
]
}
},
{
"name": "text",
"data": "可知，电路的总阻抗由电阻和电容确定，且随频率的增大而减小；而当频率大于某个特定值时，阻抗基本保持不变。这就解释了回路中的电流为什么呈现出先增大后趋于稳定的趋势。针对该RC电路模型，对电流-频率特性进行计算，如"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（c）所示，理论结果（实线）和实验结果（虚线）基本吻合，进一步证明了本研究中的单注入型Micro-LED可以用该RC电路模型等效，为后续优化单注入型Micro-LED器件结构和驱动信号参数具有指导意义。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "通过对上述单注入型Micro-LED的RC等效电路分析可知，交流驱动的单注入型Micro-LED的阻抗易受频率的影响变化。除此之外，驱动电压也影响单注入型Micro-LED的电流和发光亮度。"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（a）为不同频率下电流-电压特性曲线，在30 kHz~1.5 MHz频率下，电流-电压特性曲线基本呈现为线性关系。由"
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"name": "xref",
"data": {
"text": "公式（1）",
"type": "disp-formula",
"rid": "DF1",
"data": [
{
"name": "text",
"data": "公式（1）"
}
]
}
},
{
"name": "text",
"data": "可知，单注入型Micro-LED器件的总阻抗在固定频率下总是保持不变的，因此当频率固定时，其电流-电压特性曲线基本呈线性关系，这与传统直流驱动LED指数型电流-电压特性曲线明显不同。"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（b）展示的是器件在不同驱动电压的显微图像，当频率不变时，随着电压的增大，器件亮度逐渐增大，说明在高电压的驱动下，有更多的载流子流入Micro-LED进行辐射复合。"
}
]
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"lang": "zh",
"label": [
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"title": [
{
"name": "text",
"data": "（a）器件在不同频率下的电流-电压特性曲线；（b）器件在不同"
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"data": "V"
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"data": "pp"
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]
},
{
"name": "text",
"data": "下的发光图像。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.4"
}
],
"title": [
{
"name": "text",
"data": "（a）Current-voltage curves of the device at different frequencies. （b）Microscopic images of devices at different "
},
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"name": "text",
"data": "V"
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"data": [
{
"name": "text",
"data": "为了更深层次地探究单注入型Micro-LED的工作机理，我们建立了单注入模型的Micro-LED有限元仿真模型，定量展示在交流电场下的单注入型Micro-LED能带变化，为单注入型Micro-LED的工作机理提供了清晰的物理图像"
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"data": "["
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"data": {
"text": "34",
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"rid": "R34",
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"data": "34"
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]
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},
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]
},
{
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"data": "。"
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"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "（a）为正弦交流电驱动的单注入型Micro-LED仿真模型图，仿真模型结构依次为绝缘层（100 nm）、p-GaN（长度为200 nm、掺杂浓度为7×10"
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"data": "17"
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"data": " cm"
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"data": "-3"
}
]
},
{
"name": "text",
"data": "）、AlGaN电子阻挡层（20 nm）、InGaN/GaN多量子阱、n-GaN（长度为2 000 nm，掺杂浓度为5×10"
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"data": [
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"name": "text",
"data": "18 "
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]
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"data": "cm"
},
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"data": [
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"data": "-3"
}
]
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{
"name": "text",
"data": "）。"
},
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"data": {
"text": "图 5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图 5"
}
]
}
},
{
"name": "text",
"data": "（b）为施加的正弦交流电压波形，其中"
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"data": "1"
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]
},
{
"name": "text",
"data": "时刻电压为零，Micro-LED处于初始状态。"
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"data": "T"
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]
},
{
"name": "sub",
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"data": "2"
}
]
},
{
"name": "text",
"data": "为正半周期的电压达到最大值的时刻，此时器件处于正向偏置状态。"
},
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"data": [
{
"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "为正半周期结束时刻，"
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "为负半周期电压达到最大值的时刻，器件处于反向偏置状态。如"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "（c）所示为单注入型Micro-LED能带图的模拟仿真结果，在"
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"data": [
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"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "~"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "阶段，当正弦电压开始施加在单注入型Micro-LED器件上时，此时器件处于正向偏置状态，n区的电子受外部电场的作用迁移到MQWs中，与从p区运动到MQWs中的空穴形成辐射复合。从仿真结果可以看出，在正弦交流电的正半周期，n区的能带未发生弯曲，而靠近绝缘层的p区能带发生明显的弯曲。当施加的电压在"
},
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"data": [
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"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "~"
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "时刻变化时，外部载流子无法注入到p端中，此时在器件内部参与复合的空穴来源于p-GaN。靠近绝缘层的p-GaN的空穴被不断消耗，导致了空穴填充水平降低，甚至形成了电子积累（即形成了反型层），造成了p层能带的强烈扭曲。我们注意到施加到Micro-LED的电压是“电源电压”和“感应电压”的总和。在正半周期，感应电压来自于p-GaN处的电子积累，其形成的电场与外加电源电场反向。在"
},
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"data": "T"
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"data": [
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"data": "2"
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]
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"name": "text",
"data": "~"
},
{
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"data": [
{
"name": "text",
"data": "T"
}
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},
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"data": [
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"data": "3"
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]
},
{
"name": "text",
"data": "时刻，尽管外加的电源电压仍处于正向偏置状态，但此时外加的电源电压的数值在下降。因此，在"
},
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"data": "~"
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"data": [
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"data": "T"
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]
},
{
"name": "text",
"data": "时刻感应电压大于外加电源电压，导致Micro-LED工作在反偏状态。在"
},
{
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"data": [
{
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"data": "T"
}
]
},
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"data": "3"
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"data": "~"
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"data": [
{
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"data": "4"
}
]
},
{
"name": "text",
"data": "阶段，随着负半周期电压的增加，空穴被拉到p区与绝缘层界面处，在能带上表现为p区的能带能量升高，能带被拉平。与正半周期类似，负半周期的n区能带未发生弯曲。"
}
]
},
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"lang": "zh",
"label": [
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"title": [
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"data": "（a）单注入型Micro-LED仿真模型；（b）正弦交流电压波形图；（c）各时刻的单注入型Micro-LED能带图。"
}
]
},
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"label": [
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"data": "Fig.5"
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"title": [
{
"name": "text",
"data": "（a）Simulation model of single-injection type Micro-LED. （b）Waveform diagram of a sinusoidal AC voltage. （c）Energy band diagrams of the single-injection type Micro-LED."
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]
}
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"data": "在正弦交流驱动下，器件内载流子的运动变化如"
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"text": "图6",
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{
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"data": "所示。其中"
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"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
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"data": "图6"
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"data": "（a）、（b）表示在正弦交流电压的正半周期驱动下的器件内部载流子运动状态。如"
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"text": "图6",
"type": "fig",
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"data": "图6"
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"data": "（a）所示，在正半周期下，电子从交流电源负极经n-GaN进入到MQWs。由于绝缘层的存在，从电源正极流出的正电荷无法进入到p-GaN中，而是累积在绝缘层的表面。此时p-GaN中的多数载流子（空穴）运动到MQWs中，与由外部注入到MQWs中的电子发生辐射复合。p-GaN中的空穴向MQWs输运的最终表现效果为靠近绝缘层的p-GaN形成带负电的耗尽层，并且随着电子的积累，还会形成反型层（"
},
{
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"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
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"data": "（b））。从电路的角度分析，“金属电极/绝缘层/p-GaN”所形成的等效电容在正半周电压上升阶段处于充电的状态。器件绝缘层的外部将会有正电荷累积，其积累的电荷量是由器件的等效电容所决定。同时，p-GaN中的等量空穴迁移到MQWs，并与从n-GaN注入的电子发生辐射复合。当正向电压达到最大值时，充电过程完成即等效电容充满电，将不再有多余的电子从n-GaN注入。当交流电源处于正半周电压下降阶段和负半周期时，载流子运动状态如"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
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{
"name": "text",
"data": "（c）所示，n-GaN中的电子将向电源正极移动。类似地，绝缘层外部的正电荷向电源负极移动，p-GaN/绝缘层界面的负电荷数量减少。最终结果是，绝缘层外的正电荷被完全消耗，靠近绝缘层的p-GaN从反型状态变为耗尽状态，并且随着耗尽程度的下降最终回到平带状态（"
},
{
"name": "xref",
"data": {
"text": "图 6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图 6"
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"name": "text",
"data": "（d））。由该过程可知，在一个驱动周期中，只有正半周驱动时Micro-LED发光，而负半周期只是为下一个正半周期的发光做准备。"
}
]
},
{
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"data": {
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"caption": [
{
"lang": "zh",
"label": [
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"name": "text",
"data": "图6"
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"title": [
{
"name": "text",
"data": "（a）正电压下器件发光时的载流子输运状态；（b）正电压下内部载流子处于稳定状态；（c）负电压下器件载流子运动状态；（d）一个正弦电压周期结束后的器件状态。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.6"
}
],
"title": [
{
"name": "text",
"data": "（a）Schematic diagram showing the carrier transport when the device emits light under positive voltage. （b）Schematic diagram showing the stable state under positive voltage. （c）Schematic diagram showing the carrier transport when the device under negative voltage. （d）Device state after one sinusoidal voltage cycle."
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"data": "单注入型Micro-LED发光机理是电子、空穴输运到MQWs并产生复合发光，因此当交流驱动信号的频率改变时，电子、空穴的输运行为及随后的复合发光行为也会发生相应变化。单注入型Micro-LED可以等效为“电容器-LED”串联结构。众所周知，随着驱动频率的提高，该结构的等效电抗下降，即流过Micro-LED的电流增大。因此，在低频范围内发光亮度随着频率的提高而增强。另一方面，当频率逐渐增大时，单位时间内的光脉冲数量增多，因此器件发光亮度增大。然而，当频率过高时，器件亮度下降，如"
},
{
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"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
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"name": "text",
"data": "图3"
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{
"name": "text",
"data": "（b）所示。高频范围内，造成亮度随频率下降的可能原因有两个。首先，器件的发光源自于载流子扩散到MQWs区域并产生辐射复合，当正半周期时间较短时，载流子来不及扩散至MQWs区域就被随后的反向电场（即负半周期）拉开。因此，频率的提高导致注入到MQWs中的载流子数量减少，从而造成器件亮度下降。此外，随着驱动频率的增加负半周期的驱动时间减短，反向流过Micro-LED的载流子数量减少。这就意味着用于下一个正半周期发光的载流子数目减少。因此随着频率的提高，单注入型Micro-LED亮度呈降低趋势。"
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"title": [
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"data": "3.5 基于单端注入的Micro⁃LED检测"
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"data": [
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"data": "本文研究的单注入型Micro-LED有望应用于微显示检测。基于单注入型Micro-LED的检测系统示意图如"
},
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"data": {
"text": "图7",
"type": "fig",
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"data": [
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"data": "图7"
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},
{
"name": "text",
"data": "（a）所示，整个系统由两个部分组成。其中第一个部分由交流电源、样品座、金属探针组成，将交流电源的两端分别连接金属探针与样品座，通过控制金属探针与垂直结构Micro-LED的p端连接，实现单端载流子的注入与Micro-LED辐射复合发光。第二部分用于检测Micro-LED的发光状态，由安置在样品座底部的倒置显微镜组成。"
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"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7"
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{
"name": "text",
"data": "（b）为显微镜拍摄的垂直结构Micro-LED阵列，每个Micro-LED的尺寸为7 μm× 7 μm，该尺寸Micro-LED芯片与前文研究用到的40 μm×40 μm Micro-LED芯片结构一致。我们用40 μm×40 μm Micro-LED芯片主要是为了探究单注入模式的发光机理。这是因为尺寸较大的芯片有利于单注入型Micro-LED的制备。而对于将单端注入的原理运用到Micro-LED芯片的电致发光检测时，我们选用的是7 μm×7 μm的垂直结构Micro-LED芯片，这是为了验证该技术对于极小Micro-LED检测的实用性。在高密度的Micro-LED阵列中，利用显微镜头放大Micro-LED阵列图像，通过电脑能够识别Micro-LED的发光状态，从而实现Micro-LED的坏点检测，如"
},
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"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
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"name": "text",
"data": "图7"
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"data": "（c）所示。同时通过移动探针能够实现制备在蓝宝石衬底上垂直结构Micro-LED芯片的单端电致发光检测（"
},
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"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
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"data": "图7"
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"data": "（d）），探针与Micro-LED建立有效的单端电气连接，检测生长于同一蓝宝石衬底上的不同Micro-LED芯片，实现了连续单点检测，证明了基于单端注入模式的Micro-LED检测的可行性。"
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"data": "（a）基于单注入方法的Micro-LED检测系统示意图；（b）垂直结构Micro-LED显微照片；（c）工作于单注入模式的垂直结构Micro-LED发光图；（d）对不同Micro-LED芯片的检测效果图。"
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]
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"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.7"
}
],
"title": [
{
"name": "text",
"data": "（a）Schematic diagram of the Micro-LED detection system based on single-injection method. （b）Micrograph of vertical structure Micro-LEDs. （c）Luminescence image of Micro-LED detected by using the detection system. （d）Luminescence images of different Micro-LEDs."
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"data": "采用传统的电致发光检测方式对Micro-LED芯片进行测试，可以准确地提供Micro-LED芯片的电学性能，给出芯片的发光波长和亮度等信息，但是难以检测制备于蓝宝石衬底上的垂直结构Micro-LED芯片"
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"data": "。此外，对于Micro-LED芯片的巨量检测而言，Micro-LED芯片数量多且尺寸小，两端电极难以与外部电极高效地建立高质量的电气连接，实现高效率且稳定的双端载流子注入难度大。因此，传统的电致发光检测方式在检测效率上难以满足Micro-LED巨量检测要求，目前尚没有成熟的适用于 Micro-LED芯片的电致发光检测工艺"
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"data": "。基于单端注入的Micro-LED检测相较于传统的电致发光检测方式，其优势不仅在于单注入型Micro-LED的单端电气接触能够实现Micro-LED辐射复合发光，而且避免了传统的电致发光检测方法难以检测制备于蓝宝石衬底上的垂直结构Micro-LED，降低了检测难度，为微显示检测提供了一种新的思路，有望成为新型的Micro-LED检测方法。"
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"data": [
{
"name": "text",
"data": "单注入型Micro-LED的发光性能难以与常规Micro-LED进行比较。首先是亮度或光功率，单注入型Micro-LED的驱动电压较大（本文中可以达到70"
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"name": "text",
"data": "），而传统Micro-LED的驱动电压显然远远小于该数值，因此亮度不存在可比性。其次是外量子效率，传统Micro-LED的外部注入电流很容易测试，因此外量子效率容易获得。而对于单注入型Micro-LED，对发光有贡献的除了注入的载流子还有器件内部的载流子，因此难以计算外量子效率。"
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{
"name": "text",
"data": "单注入模式主要是为了解决LED芯片进一步缩小后所面临的电接触难题。尽管单注入型Micro-LED工作电压高、频率高，但是通过对材料和器件结构进行优化，是有机会降低单注入型Micro-LED工作电压的。此外，单注入模式在Micro-LED电致发光检测方面具有显著优势，为Micro-LED检测提供了新的思路与方法。"
}
]
}
]
}
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"title": [
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"data": "4 结 论"
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"data": [
{
"name": "text",
"data": "本文提出了一种单注入型Micro-LED器件，其中Micro-LED芯片与外部驱动引线之间仅存在单端的电学接触，Micro-LED芯片的另一端采用绝缘层与外部电极隔离开。在交流电场的驱动下，电子/空穴周期性地注入Micro-LED芯片，从而实现稳定的周期性发光。获得了单注入型Micro-LED器件的电流-驱动电压关系、电流-驱动频率关系、亮度-驱动频率关系，建立单注入模式下Micro-LED的仿真模型，量化了在交流驱动下单注入型Micro-LED的能带变化细节，阐述了单注入型Micro-LED的工作机理。研究表明，单注入型Micro-LED的发光亮度除了受驱动电压、注入电流的影响外，还对驱动频率极为敏感，在固定某一电压下，存在一个最佳驱动频率。单注入型Micro-LED的亮度随着驱动频率的增加而增大，当超过最佳驱动频率后，亮度将随驱动频率的增加而减小。驱动电压为70"
},
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"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "sub",
"data": [
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"data": "pp"
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]
},
{
"name": "text",
"data": "时，开启频率为40 kHz，最佳驱动频率为300 kHz，最大亮度为3.5 μW/cm²。初步验证了单端载流子注入模式应用于Micro-LED检测的可行性，克服了传统检测方法难以检测生长于蓝宝石衬底的垂直结构Micro-LED的缺点，为Micro-LED检测提供了新思路。"
}
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"name": "p",
"data": [
{
"name": "text",
"data": "本文专家审稿意见及作者回复内容的下载地址："
},
{
"name": "extlink",
"data": {
"text": [
{
"name": "text",
"data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/"
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"href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/"
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"name": "p",
"data": [
{
"name": "text",
"data": "CJL.20220270."
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]
}
]
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"name": "text",
"data": "李俊龙,李文豪,苏昊等.面向Micro⁃LED驱动与检测的单端注入电致发光机理[J].发光学报,2022,43(12):1991-2000."
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