Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于无机电荷产生层的量子点电致发光器件" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "战", "givenname": "胜", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAN", "givenname": "Sheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "战胜（1994-），男，吉林长春人，硕士研究生，2019年于吉林大学获得学士学位， 主要从事量子点发光器件的研究。E‑mail：zhansheng19@mails.jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472078&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472082&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472080&type=", "width": "24.89202881", "height": "29.88732147", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "战胜" }, { "name": "text", "data": "（1994-），男，吉林长春人，硕士研究生，2019年于吉林大学获得学士学位， 主要从事量子点发光器件的研究。E‑mail：" }, { "name": "text", "data": "zhansheng19@mails.jlu.edu.cn" } ] ] } ], "email": "zhansheng19@mails.jlu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "佳田", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Jia-tian", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "汉壮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Han-zhuang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "纪", "givenname": "文宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JI", "givenname": "Wen-yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： jiwy@jlu.edu.cn", "data": [ { "name": "text", "data": "E-mail： jiwy@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "纪文宇（1982-），男，黑龙江海伦人，博士，教授，2010 年于吉林大学获得博士学位，主要从事半导体纳米材料（量子点）薄膜物理、发光器件的研究。E‑mail：jiwy@jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472091&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472091&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472091&type=", "width": "24.89202881", "height": "29.88732147", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "纪文宇" }, { "name": "text", "data": "（1982-），男，黑龙江海伦人，博士，教授，2010 年于吉林大学获得博士学位，主要从事半导体纳米材料（量子点）薄膜物理、发光器件的研究。E‑mail：" }, { "name": "text", "data": "jiwy@jlu.edu.cn" } ] ] } ], "email": "jiwy@jlu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "吉林大学 物理学院， 吉林 长春　130012", "data": [ { "name": "text", "data": "吉林大学 物理学院， 吉林 长春　130012" } ] }, { "lang": "en", "text": "College of Physics， Jilin University， Changchun 130012， China", "data": [ { "name": "text", "data": "College of Physics， Jilin University， Changchun 130012， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "利用WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO作为电荷产生层（CGL）制备了具有倒置结构的量子点电致发光器件（QLED），相比于传统的基于单层ZnO作为电子传输层的QLED，利用CGL‐QLED的电流效率提高了近30%。这主要归因于CGL的电子注入具有电场依赖特性，从而使得器件中的电荷注入更加平衡，提高了激子的形成效率，抑制了载流子导致的猝灭过程。此外，我们通过瞬态电致发光光谱技术及电容特性测试，分析了基于CGL的QLED的器件工作机制，发现CGL中可以存储大量的载流子，从而使得器件在脉冲电压驱动时出现发光过冲现象。其环境稳定性也与常规的基于ZnO的器件一致。而由于CGL独特的电荷产生机制，使得其不依赖于电极功函数特性。我们相信，这种器件结构在改善器件稳定性及良率方面有着巨大潜力。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Quantum-dot light-emitting diodes（QLEDs）are fabricated by employing an inorganic charge-generation layer（CGL） consisting of WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO instead of commonly used ZnO electron-transport layer. The performance of CGL based QLED is increased by around 30% compared with the device with ZnO as the electron-transport layer， which is attributed to the electrical field-dependent charge injection of CGL， resulting in more balanced charge injection and efficient exciton formation. Moreover， the emission quenching processes induced by charges are also reduced. The working mechanism of CGL based QLEDs is unraveled by transient electroluminescence spectrum and capacitance measurements. We find that the CGL can act as a charge reservoir， which is the origin of electroluminescence overshoot at the rising edge of transient electroluminescence response. Additionally， the shelf lifetime of CGL-QLEDs is identical with or even better than the normal ZnO based devices. Considering the charge injection of CGL is independent on the work function of electrodes， we believe the device structure proposed in this work has great potential to improve device stability and yield." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "量子点发光器件" } ], [ { "name": "text", "data": "电荷产生层" } ], [ { "name": "text", "data": "过冲" } ], [ { "name": "text", "data": "电荷存储" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "quantum-dot light-emitting diodes" } ], [ { "name": "text", "data": "charge-generation layer" } ], [ { "name": "text", "data": "overshoot" } ], [ { "name": "text", "data": "charge storage" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "自从1983年贝尔实验室Brus博士首次提出了胶体量子点（Colloidal quantum dots）的概念" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以来，1993年，麻省理工学院Bawendi教授领导的科研小组第一次在有机溶液中合成出了大小均一的量子点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。自此，开启了量子点相关研究的序幕。随着合成技术的发展，其优异的光电特性得到了极致的展现，使得其在生物探针、生物标记、太阳能电池、光电探测器及电致发光等领域显示出巨大的应用潜力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R3", "R4", "R5", "R6", "R7" ], "text": "3-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。尤其是量子点电致发光二极管（QLED），其在显示及照明领域有着独特的优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R8", "R9", "R10" ], "text": "8-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，更好的环境稳定性、窄发光线宽 （" }, { "name": "text", "data": "<" }, { "name": "text", "data": "30 nm）、高荧光量子产率以及对低成本的溶液处理技术的兼容性等。目前，典型的QLED结构为以ZnO纳米粒子作为电子传输层（ETL）、有机小分子或聚合物作为空穴传输层的杂化结构。适用于显示的三基色QLED的外量子效率均已达到20%的理论值" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R11", "R12", "R13" ], "text": "11-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。尽管如此，器件的稳定性依然是QLED走向商业化过程中需要解决的一个最关键难题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于QLED来说，其稳定性包含两种：一种是经常提到的工作稳定性，即器件在点亮状态下持续工作的时间，一般用加速老化测试推算得到亮度下降到初始亮度" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "（一般取100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "） 的95%或50%时的时间，分别称为" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "95" } ] }, { "name": "text", "data": "及" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "；另外一种评估器件稳定性的参数是其存储稳定性，即器件在封装制作完成之后，在室温环境下可以储存的时间。这两种稳定性指标都是决定QLED能否商业化的关键。目前对前一种稳定性的报道较多，而对第二种的研究较少。对于其存储稳定性，不仅受制于材料本身的稳定性，同时也与构成器件的不同材料膜层之间的界面稳定性密切相关，尤其是电极与电荷注入层之间的界面，直接决定了器件中电荷的注入效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在常规的器件中，电荷一般是从电极直接注入到器件中。因此，电极与电荷注入层之间的界面对器件的稳定性是至关重要的，尤其是对柔性器件来说，电极与功能层之间很容易出现剥离脱落的现象，从而导致器件失效。最近有报道利用电荷生成层（CGL）来代替传统的电荷注入层，实现电荷从CGL到器件中的直接注入，而电极只是用来提供CGL中电荷生成的电场" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R14", "R15", "R16" ], "text": "14-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这不但抑制了器件性能对电极与功能层这一界面的高度敏感性，同时也解决了电荷注入高度依赖于电极与电荷注入层之间的功函数匹配难题。通过CGL这一结构的引入，使得柔性器件的弯曲稳定性得到了极大的改善，在弯折200次以上时，柔性器件仍展现出完好的电致发光特性，而常规的器件上出现很多暗点。然而，在这一工作中，其利用了聚3，4-乙烯二氧噻吩与聚苯乙烯磺酸盐的混合物（PEDOT∶PSS）与ZnO构成CGL，而PEDOT∶PSS具有较强的酸性，会对电极及ZnO膜层造成损坏，这会对器件稳定性，尤其是存储稳定性造成极大影响。所以，构筑一种稳定的、对相邻膜层没有影响的CGL是急需解决的挑战。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文利用WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO双无机层构筑CGL。这两种氧化物都具有较好的稳定性，且其制备过程及材料本身都对其他材料没有破坏作用。我们利用红光QLED作为模型器件，验证了CGL在QLED中的适用性。最终，相比于传统的基于ZnO电子传输层的QLED，利用CGL构筑的QLED器件的电流效率（Current efficiency）提高了30%，且其存储稳定性与常规器件不相上下。这一结果表明其在柔性QLED中具有潜在的应用价值。此外，我们还通过瞬态电致发光光谱（TREL）及电容（Capacitance）特性的表征，揭示了CGL的工作机制：CGL中可以存储大量的载流子，从而导致器件在脉冲电压驱动时出现发光过冲现象。这一过冲现象在未来的高亮度器件、快速响应器件及单光子器件中都具有很大的应用潜力。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　器件制备及表征" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本文中的器件制备在玻璃衬底上，利用透明铟锡氧化物（ITO）作为底电极（阴极），具体结构为：glass/ITO/ZnO（40 nm）或CGL（35~50 nm）/quantum dots（QDs,~20 nm）/4,4′-bis（9-carbazolyl）-2,2′-biphenyl（CBP,60 nm）/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（8 nm）/Al。其中，ZnO及CGL用于提供电子的注入；QDs作为发光层；CBP作为空穴传输层；MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al作为阳极。CGL为由WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（~5~20 nm）/ZnO（~30 nm）构成的双层结构，ITO上ZnO的厚度约为40 nm，WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上ZnO的厚度约为30 nm，WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的厚度在5~20 nm之间调控，以优化器件性能。量子点材料购买于纳晶科技有限公司；CBP、MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "购于西安宝莱特光电科技有限公司；二水合醋酸锌购自天津百伦斯生物技术有限公司；正丙醇及无水乙醇购于Aladdin公司；WCl" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "和氢氧化钾购买于Sigma-Aldrich公司。将六氯化钨粉末溶于正丙醇溶液中，超声至溶解备用，浓度为5~20 mg/mL。WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜通过旋涂六氯化钨的正丙醇溶液并在150 ℃退火15 min制得。ZnO纳米粒子合成过程参考文献[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]中的方法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在制备器件之前，对带有图案化的ITO玻璃衬底进行清洗。先用清洁剂Decon 90搓洗ITO，用去离子水冲洗干净后，再将衬底依次在去离子水、丙酮、乙醇、去离子水中各超声清洗15 min，最后用氮气吹干；再将衬底放入紫外臭氧机中进行表面处理，时间为5 min。之后，将衬底放入充满氮气的手套箱中利用溶液法进行ZnO、WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、QD薄膜的制备。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、ZnO及发光层QD薄膜在手套箱中通过溶液旋涂技术进行制备，旋涂时转速都为2 500 r/ min。每层薄膜旋涂完毕后需热退火30 min后待衬底冷却后再旋涂下一层薄膜，退火温度分别为150，80，100 ℃。CBP、MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "及Al薄膜均通过真空热蒸镀系统在高真空条件（压强小于4×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa）下通过热蒸发制备，利用石英晶体膜厚监测仪（SI-TM608）监控各材料沉积速率，实际实验中速率分别为0.2，0.05，0.5 nm/s。器件电压和电流利用吉时利源表Keithley model 2400测得，亮度及光谱利用光谱辐射亮度计PR650测得，以上两种设备通过计算机编程进行控制联动；器件电容特性通过LCR测量仪（Precision LCR Meter TH2829C Tonghui）获得；TREL通过我们实验室搭建的测试系统测量。测试系统主要包括：信号发生器（RIGOL DG5102）、光电倍增管（PMT，Zolix PMTH-S1-CR131）及数字示波器（RIGOL DS4054）。信号发生器给器件提供驱动电压，PMT用以检测电致发光信号，并通过数字示波器进行数据采集。所有的测试都是在室温条件下进行，器件利用盖玻片及紫外固化胶进行简单封装。薄膜的形貌通过原子力（AFM）显微镜表征，显微镜型号为Nanosurf core-AFM。扫描电镜图片通过Regulus8100（Hitachi Japan）测得。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）为QLED的结构示意图。从图中可知，对于常规结构的发光器件来说，在电压驱动下电子由ITO阴极经过ZnO电子传输层注入到QD发光层中。一般来说，在ITO与ZnO界面存在电子的注入势垒，从而导致器件的开启电压升高、功耗增加、功率效率降低。换句话说，ITO与ZnO之间的界面特性决定了器件中电子注入的性能。随着器件的使用，特别是在柔性器件中，随着弯折次数的增加，这一界面的性能退化将导致器件性能急剧退化。因此，我们设计了" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示的器件结构。在这一结构中，我们利用由溶液法制备的WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO双层薄膜作为CGL来提供QLED中的电子注入。按照文献报道，在电场的作用下，构成CGL的WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和ZnO之间的界面处产生电子空穴对，电子沿着ZnO薄膜注入到QDs中。这种电荷产生、注入机制就避免了电荷由ITO到ZnO的注入过程，而ITO只是作为导电层，提供电场。另外，决定这种基于CGL的QLED的功耗的一个关键是CGL层的额外的电压降。在这里，我们测试了ITO/CGL/Al这种结构的器件的电流密度‑电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）特性，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）所示。其中，当ITO作为阴极时，测得的电流为CGL的产生电流；当ITO为阳极时，测得的电流为由电极注入导致的。从图中的数据可知，两种情况下电流几乎一致。而且只要给器件施加电压，便可测到电流，这一方面说明各电极界面为欧姆接触，另一方面表明CGL中无额外电压损耗。为进一步表征CGL的电荷生成效率，我们绘制了生成电流与注入电流的比值（我们定义这一比值为电荷产生效率，Charge-generation ratio）随驱动电压的变化曲线，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（d）所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）常规QLED结构示意图；（b）基于CGL的QLED结构示意图；（c）ITO/WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " nm）/ZnO（30 nm）/Al器件电流密度‐电压特性曲线；（d）CGL的电荷产生效率随电压变化特性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Schematic device structure of conventional（a） and CGL-based（b） QLEDs. （c）" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V" } ] }, { "name": "text", "data": " curves of ITO/WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " nm）/ZnO（30 nm）/Al. （d）Charge-generation ratio under different driving voltages for ITO/WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " nm）/ZnO（30 nm）/Al with different thicknesses of WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472095&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472103&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472098&type=", "width": "116.10565186", "height": "87.59216309", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "为QLED的光电特性。从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）中可以看出，WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的引入对器件的工作电流几乎没有影响。然而，在低压范围（" }, { "name": "text", "data": "<" }, { "name": "text", "data": "3 V），加入WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的器件的电流降低。这部分电流以漏电流为主，所以我们可以推断，WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的引入抑制了器件的漏电流，从而提高了器件电流效率，尤其是低电流密度（电压）下的器件效率，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示。另外，值得注意的是，当WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的厚度为5 nm时，QLED的漏电流要高于基于ZnO电子传输层的常规器件，这主要是由于WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜层过薄，而CGL中ZnO膜层厚度约为30 nm，所以使得漏电流较大。此外，过薄的WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "使得其成膜质量不好，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）中插图的扫描电镜图所示，这也是导致漏电流较大的一个原因。然而，尽管如此，插入5 nm的WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜后，器件的性能依旧得到提高，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示。这主要归因于CGL的电荷存储效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。针对这一问题，将通过器件的电容及TREL特性进行详细表征。我们注意到，器件在高电流密度时效率提升有限，这主要是由于高电流密度时器件内载流子浓度升高，不平衡的载流子浓度会导致发光猝灭，导致高电流密度区器件的性能提升并不明显。此外，在高压时，器件中电子的注入明显高于空穴，导致载流子注入不平衡，器件效率下降。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）基于ZnO及CGL的QLED的电流密度-电压-亮度特性；（b）QLED的电流效率随驱动电压变化曲线；（c）QLED的电容随驱动电压变化；（d）QLED在驱动电压为4 V时的电致发光光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "（a） and current efficiency（b） " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " current density， and capacitance-voltage properties（c） of QLEDs under different driving voltages. （d）Electroluminescence spectra of QLEDs under driving voltage of 4 V." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472108&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472120&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472115&type=", "width": "135.53198242", "height": "92.69358826", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）所示为QLED在不同电压下的电容特性曲线。可以看出，4个器件的几何电容（器件开启前及负压下的电容为器件的几何电容，此时器件等效为平行板电容器）几乎一致，这主要归因于4个器件具有相似的器件厚度。而在器件开启后，基于CGL的器件的电容明显大于常规器件的电容。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（d）为器件在4 V电压下的电致及光致发光光谱。由图可知，器件的电致发光光谱与量子点的光致发光光谱一致，没有任何来自其他功能层的发光。这说明在电驱动下，器件中的激子主要在QD上形成，而电致发光都来自于QD中的激子。所以，我们可以得出结论：WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的引入未影响器件中激子的形成区域。因此，我们认为前述CGL器件中较大电容的现象主要是由于CGL中的电荷存储效应。这种电荷的存储效应对器件的开启过程有着极大的影响，如下文中TREL结果所示。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为进一步表征WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜层对器件其他功能层成膜特性的影响，我们测试了ITO/WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（5 nm）、ITO/WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20 nm）、ITO/WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20 nm）/ZnO（30 nm）及ITO/ZnO（40 nm）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "4个样品的AFM图像，结果如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。从图中可以看出，当WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度增加到20 nm时，其薄膜的粗糙度（均方根，RMS）变大，展现出明显的片状结构，这是典型的WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "结构。与纯ITO上的ZnO膜层相比，在WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上沉积的ZnO膜层的粗糙度也有所增加，但其RMS也只有~1 nm，展示出极好的平整性。由AFM结果可知，器件性能的变化不是由薄膜的形貌特性导致的。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同厚度的WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜层的原子力形貌图：（a）5 nm，（b）20 nm；WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20 nm）/ZnO（30 nm）（c）及单ZnO（40 nm）（d）膜层的原子力形貌图。所有的膜层都沉积在ITO玻璃衬底上。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "AFM images of pristine WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films with different thicknesses： （a）5 nm， （b）20 nm. AMF images of WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20 nm）/ZnO（30 nm）（c） and ZnO（40 nm）（d） films. All the films are deposited on the glass/ITO substrates." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472123&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472133&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472130&type=", "width": "101.34686279", "height": "94.11663818", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）为TREL测试中脉冲电压示意图，红色线代表驱动电压，粉色为驱动电压结束后施加在QLED上的偏置电压。在驱动电压关断之后，QLED中会残留大量载流子，而这些载流子的动力学过程（包括迁移、激子解离及发光）受偏置电压调控。所以表征器件在不同偏置电压下的电致发光过程可以评估器件中残留载流子的特性。已有文献报道，在QLED中激子的形成过程为一个电子率先注入到一个QD中，之后伴随着一个空穴的注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。换句话说，快速的电子注入将会导致激子的快速高效形成，进而导致强烈的电致发光。TREL全光谱结果如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）所示。可以看出，在CGL器件电致发光开启阶段具有很强的过冲（Overshoot）现象，而ZnO器件的过冲现象并不明显。所以，我们将这一过冲现象归因于CGL层的作用。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）为TREL上升沿曲线。从图中可以看出，随着WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度的增加，过冲持续的时间增加，考虑到WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜表面相似的特性，这一过冲增加的现象应该只和WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度（或者说是含量）有关。WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "是典型的光致及电致变色材料，WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中的钨元素具有可逆的价态转换特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，其有较强的电荷存储能力。当给器件施加驱动电压时，WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO界面产生电子空穴对，在电场的作用下，电子通过ZnO注入到量子点中，与从阳极注入的空穴在QD中形成激子。而WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO界面产生的空穴则向ITO方向移动，其中部分空穴存储在WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中。当电压关断时，ZnO中的电子受到WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中存储的带正电的载流子（空穴）的静电吸引相互作用，从而堆积在WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO界面，当下一个驱动脉冲施加在器件上之后，这些堆积的电子迅速注入到QD中，形成激子发光。而随着堆积的电子的消耗，电致发光强度开始下降，导致了过冲现象。而WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "越厚，其存储的空穴越多，导致高的静电场，从而使得WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO界面堆积的电子增多，出现了过冲强度增大的现象。而且，随着WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度持续增大，过冲强度出现饱和。对于单层ZnO作为电子传输层的QLED来说，在电压关断之后，ZnO中的电子会经过ITO电极以类似电容器中的放电过程而消耗殆尽，所以其发光过冲显现不明显。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）TREL测试中脉冲电压示意图；在驱动脉冲电压为4 V时，不同器件的瞬态电致发光响应：（b）全谱，（c）上升沿，（d）下降沿特性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "（a）Schematic diagram of pulsed voltage in transient electroluminescence. Transient electroluminescence response of QLEDs with different electron suppliers： whole response spectra（b）， rising edges（c）， falling edges（d） under driving voltage of 4 V." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472138&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472146&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472141&type=", "width": "135.06192017", "height": "94.73632813", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "此外，" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（d）所示TREL的下降沿进一步证实了我们上述结论。从图中可以看出，CGL器件的发光衰减速率要高于ZnO器件，这是由于WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中空穴对器件中电子的静电吸引作用，从而使得在驱动电压关断后，电子迅速从QD发光层迁移至WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO界面，使得器件发光迅速下降。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步分析器件中载流子的动力学过程，我们测试了4个器件在不同偏置电压下的TREL上升沿特性，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。从图中可以看出，基于CGL的器件的过冲对偏置电压具有很强的依赖特性，正偏置电压使得过冲强度增大，这是由于在正压下，CGL可以持续地产生载流子，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）所示。这使得ZnO/QD界面处有大量的电子堆积，当驱动脉冲施加到器件上之后，器件会导致发光强度快速上升的现象。而反向偏置电压会使得CGL中的电子空穴发生复合湮灭的现象，从而使得CGL中剩余载流子数量大大降低，进而导致过冲现象降低甚至消失。而ZnO器件的过冲强度对偏置电压依赖特性很弱，这与" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中分析类似，平行板电容器的放电过程与偏置电压无关。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "在驱动脉冲电压为4 V时，器件在不同偏置电压下的瞬态电致发光响应，器件的电子注入部分的结构分别为：（a）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（5 nm）/ZnO（30 nm），（b）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（10 nm）/ZnO（30 nm），（c）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20 nm）/ZnO（30 nm），（d）ZnO。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "Transient electroluminescence response of QLEDs with different electron suppliers under driving voltage of 4 V. （a）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（5 nm）/ZnO（30 nm）. （b）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（10 nm）/ZnO（30 nm）. （c）WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20 nm）/ZnO（30 nm）. （d）ZnO." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472149&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472156&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472153&type=", "width": "120.47570801", "height": "94.49937439", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "为基于WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（10 nm）/ZnO（30 nm） CGL的器件和基于ZnO的器件的存储稳定性。器件利用紫外固化胶及盖玻片简单封装，之后置于空气中。我们发现，在放置13.5 h后，基于ZnO的器件开始出现暗点，这可能是源自于ZnO本身的吸水性，使得水汽从ITO/ZnO界面进入到器件中。而基于CGL的器件则展示出较好的稳定性，在经历13.5 h后器件像素点内仍显示出完好的发光，无明显暗点。这一方面是由于WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜对ZnO薄膜起到保护作用；另一方面是因为基于CGL的器件中的电子是由CGL中的 WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO界面产生，而不依靠ITO电极的注入。所以，相对ITO/ZnO界面来说，器件性能对ITO/CGL界面的依赖性较低。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "CGL（a）和ZnO（b）器件在不同放置时间的照片，驱动电压为3 V。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Photographs of devices based on CGL（a） and ZnO（b） for different shelf time， driven under 3 V." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472160&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472166&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36472164&type=", "width": "119.29449463", "height": "57.41720581", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "在本工作中，我们利用WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO电荷生成层结构制备了高效的QLEDs，通过优化WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的厚度，使得器件的电流效率达到14.9 cd/A，相比于基于ZnO电子传输层的常规器件的11.5 cd/A的电流效率，提高了近30%。这得益于电荷生成层独特的电场依赖的电荷生成特性，使得电子和空穴更加平衡，从而提高激子生成效率，减少电荷引起的发光猝灭作用，提高了器件效率。此外，我们通过瞬态电致发光光谱及器件电容特性的测量，揭示了CGL-QLED的工作机制。CGL具有巨大的电荷存储能力，在器件工作过程中，CGL中存储的电荷可以实现到器件的快速注入，从而导致器件电致发光的过冲现象。这一过冲过程使得器件在刚开启的几十微秒的时间尺度内发光强度得到极大提升，我们预计该现象将在快速响应器件及单光子器件中有很大的应用潜力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": 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