Thin-film Encapsulation of Organic Light Emitting Diode by Atomic Layer Deposition Enhanced Publication

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}, { "name": [ { "lang": "zh", "surname": "李", "givenname": "泽", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Ze", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "振宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Zhen-yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "范", "givenname": "思雨", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FAN", "givenname": "Si‐yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "姜", "givenname": "文龙", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JIANG", "givenname": "Wen-long", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： jiang_wl@163.com", "data": [ { "name": "text", "data": "E-mail： jiang_wl@163.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "姜文龙（1963- ），男，吉林公主岭人，博士，教授，2005年于吉林大学获得博士学位，主要从事有机电致发光器件的研究。E⁃mail: jiang_wl@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865178&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865183&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865181&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "姜文龙" }, { "name": "text", "data": "（1963- ），男，吉林公主岭人，博士，教授，2005年于吉林大学获得博士学位，主要从事有机电致发光器件的研究。E⁃mail: " }, { "name": "text", "data": "jiang_wl@163.com" } ] ] } ], "email": "jiang_wl@163.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "段", "givenname": "羽", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "DUAN", "givenname": "Yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "duanyu@jlu.edu.cn", "data": [ { "name": "text", "data": "duanyu@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "段羽（1978-），男，吉林长春人，博士，教授，2006年于吉林大学获得博士学位，主要从事柔性透明导电电极、光电子器件薄膜封装、钙钛矿/有机电致发光器件、钙钛矿光伏及照明以及水汽透过测试系统等方面的研究。E⁃mail: duanyu@jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865188&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865192&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865189&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "段羽" }, { "name": "text", "data": "（1978-），男，吉林长春人，博士，教授，2006年于吉林大学获得博士学位，主要从事柔性透明导电电极、光电子器件薄膜封装、钙钛矿/有机电致发光器件、钙钛矿光伏及照明以及水汽透过测试系统等方面的研究。E⁃mail: " }, { "name": "text", "data": "duanyu@jlu.edu.cn" } ] ] } ], "email": "duanyu@jlu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "长春电子科技学院 电子工程学院， 吉林 长春　130114", "data": [ { "name": "text", "data": "长春电子科技学院 电子工程学院， 吉林 长春　130114" } ] }, { "lang": "en", "label": "1", "text": "School of Electronic Engineering， Changchun College of Electronic Technology， Changchun 130114， China", "data": [ { "name": "text", "data": "School of Electronic Engineering， Changchun College of Electronic Technology， Changchun 130114， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "吉林大学 电子科学与工程学院， 集成光电子学国家重点联合实验室吉林大学实验区， 吉林 长春　130012", "data": [ { "name": "text", "data": "吉林大学 电子科学与工程学院， 集成光电子学国家重点联合实验室吉林大学实验区， 吉林 长春　130012" } ] }, { "lang": "en", "label": "2", "text": "State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University， Changchun 130012， China", "data": [ { "name": "text", "data": "State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University， Changchun 130012， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "有机电致发光器件（Organic light emitting diode，OLED）具有轻薄、便于携带、自发光、能耗低、亮度更大、柔性显示等特点，可以增加显示产品的附加值，因此被科学和产业界广泛关注。然而，OLED器件中的有机材料对空气中的水汽和氧气十分敏感，若器件在无封装保护的情况下长期在空气中存放，将会严重影响OLED的工作性能和寿命。除了选择合适的传输层材料、表面层结构和利用界面工程提高材料水氧耐受能力之外，对器件进行可靠的封装是隔绝空气中水汽和氧气侵蚀的一种有效手段。原子层沉积（Atomic layer deposition，ALD）是一种已经在实验室验证的有效薄膜沉积封装技术，由于ALD的自限制反应特性，可以在低温下沉积出厚度精确可控且均匀致密的薄膜，利用ALD沉积的薄膜往往拥有良好的机械柔性、超高的阻隔性能和光学透过率。本文将回顾原子层沉积技术的原理，分析ALD制备薄膜的水汽透过率，比较ALD在单层、有机‐无机叠层薄膜封装制备上的技术优势。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Organic light emitting diode（OLED） has the characteristics of lightness， thinness， portability， self-luminescence， low energy consumption， higher brightness， and flexible display " }, { "name": "italic", "data": [ { "name": "text", "data": "etc" } ] }, { "name": "text", "data": ".， which can increase the added value of display products， so it has been widely concerned by scientific and industrial circles. However， the key organic materials in OLED devices are very sensitive to water vapor and oxygen in the air. If the device is exposed to air for a long time without protection， it will seriously affect the long-term performance of the device and shorten the life of the OLED. In addition to selecting appropriate transmission layer material and surface layer structure， and using interface engineering to improve the water and oxygen tolerance of materials， reliable encapsulation of the device is another effective means to isolate water vapor and oxygen corrosion in the air. Atomic layer deposition（ALD） is an effective film deposition and thin film encapsulation technology that has been verified in the laboratory. Due to the self-limiting reaction characteristics of ALD， it can deposit thin films with accurate and controllable thickness， uniform and dense at low temperature. The films deposited by ALD always have good flexibility， ultra-high barrier performance and optical transmittance. In this paper， we will review the principle of atomic layer deposition technology， analyze the water vapor transmission rate， compare the advantages of ALD in single-layer and organic-inorganic laminated film encapsulation." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "薄膜封装" } ], [ { "name": "text", "data": "有机电致发光器件" } ], [ { "name": "text", "data": "原子层沉积" } ], [ { "name": "text", "data": "柔性显示" } ], [ { "name": "text", "data": "水汽透过率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "thin-film encapsulation" } ], [ { "name": "text", "data": "organic light emitting diode" } ], [ { "name": "text", "data": "atomic layer deposition" } ], [ { "name": "text", "data": "flexible display" } ], [ { "name": "text", "data": "water vapor transmission rate" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "随着智能电子产品向着轻薄、便携方向的快速发展，薄膜型光电子器件应用日益广泛。目前，有机电致发光器件（Organic light emitting diode，OLED）已在显示屏制造领域实现了产业化，在智能手机的带动下，OLED市场呈现了快速发展的势头，市场渗透率超过50%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，OLED技术仍有很多科学和技术问题亟待解决，空气中的水汽和氧气会破坏有机材料和金属电极，严重影响器件的工作稳定性。封装光电子器件可以阻止水汽和氧气的渗透以延长器件的寿命。外部封装技术要求在对内部结构性能影响最少的情况下提供对器件的保护，同时能够连接内外部供电、进行散热冷却等，并且满足一定的机械性和机械性能需求。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "原子层沉积（Atomic layer deposition，ALD）因其制备的薄膜致密、均匀、在低温下可精确控制其厚度的特点，在薄膜封装（Thin-film encapsulation，TFE）领域有巨大的应用潜力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但ALD技术应用于OLED的TFE需要考虑以下三个因素：（1）水汽透过率（Water vapor transmission rate，WVTR）。由于OLED中的有机成分在接触到空气中的水汽时会发生水解，器件内部的金属电极也易于与环境中的水汽反应从而对器件造成损坏，导致器件出现退化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为保证器件具有10年的使用寿命，一般TFE的水汽阻隔能力需达到10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，以起到对器件有效保护的作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。 （2）光学透过率。对于顶发射OLED器件，TFE除了起到阻隔水氧作用，还应具备较高的光学透过率。光学透过率通常与薄膜的密度成反比，ALD制备的薄膜具有相对较高的密度，高密度薄膜导致材料的折射率变化，引起发光层与TFE间的折射率失配，形成光损耗，因此较高密度薄膜会降低光学透过率，可以通过将高折射率和低折射率材料组成纳米叠层结构的方法提高器件的光取出性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。 （3）机械性能。ALD制备的TFE具有较大的内部应力，容易产生断裂现象。因此，要在保证较好的水汽阻隔性能前提下兼顾薄膜的机械性能，使之具有一定的机械柔性。一方面，可以将具有应力缓冲作用的层引入纳米叠层结构，使膜应力降低到阈值水平以下，无机势垒结构的内应力可以通过结合反向应力层来释放，但当施加外部应力时，由于弯曲疲劳，势垒仍然容易开裂；另一方面，可将中性表面移向封装层以有效降低外部应力。柔性有机光电器件封装层要求更薄，对封装性能可能会有更苛刻的要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ALD工艺技术因具有膜厚可控、台阶覆盖率高等特点被广泛应用到半导体器件研发制造领域，德国伍珀塔尔大学电子器件研究所Riedl等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "论述了ALD生长的钙钛矿太阳能电池（Perovskite solar cell，PSC）功能电荷传输层的研究。澳大利亚新南威尔士大学Hoex等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "介绍了 ALD 技术在晶体硅太阳能电池、有机太阳能电池（Organic photovoltage，OPV）、薄膜太阳能电池和量子点太阳能电池等领域的应用。ALD制备的氧化物薄膜适用于多种半导体器件，尤其在薄膜型光电子器件的封装领域正在发挥独特作用。澳大利亚斯温本科技大学Jarvis等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "论述了为使OPV和OLED具有足够的使用寿命以满足商业应用，重点讨论了ALD单层膜和无机多层TFE降低水汽透过率，同时提出了ALD金属氧化物和聚合物的交替阻挡膜可以延长水汽渗透路径，从而降低了WVTR值。韩国汉阳大学Park等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在综述中论述了TFE与传统封装的不同适用范围，提出仅ALD无机叠层封装难以获得高水汽阻隔和机械性能，表明需要有机-无机杂化薄膜。文中主要从调节TFE中的内应力角度出发，讨论了插入有机层提高薄膜机械性能的方法。华中科技大学Chen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "回顾了ALD封装技术在OLED上的应用，将ALD与其余传统沉积工艺进行了比较，并介绍了不同种类的原子层沉积法及其原理，阐明了OLED要实现长期稳定性所需达到的封装要求。对各类ALD单层TFE和ALD叠层薄膜结构封装，讨论了薄膜生长条件、前驱体沉积量和沉积次序对沉积薄膜效果的影响，并对被封装器件的组成材料和结构与封装膜的适配性问题进行了分析。他们还统计发现OLED的封装技术是三种器件 （OLED、OPV和PSC） 中最成熟的，讨论了三种设备的当前主要退化机制，介绍了每种设备主要外部损坏因素以及封装材料的规格和要求，并分析了各种不同的封装工艺优劣" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文将总结近几年原子层沉积技术制备薄膜工艺的新技术，以及作者课题组前期在有机-无机纳米叠层结构的工作。介绍ALD自限制沉积方式形成TFE的优势并与其他传统的沉积工艺比较；探究前驱体原料、掺杂比率、沉积温度、ALD脉冲时间和吹扫时间对薄膜沉积性能的影响以及薄膜厚度和封装性能之间的关系。总结不同有机聚合物层TFE的封装优越性。本综述将阐明通过改善封装结构、插入石墨烯金属层等的巨大优势，为下一阶段OLED柔性TFE提供科学依据。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　薄膜沉积技术" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　应用于薄膜封装的成膜技术" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "目前OLED的TFE主要以化学气相沉积（Chemical vapor deposition，CVD）为主，CVD方法可以提供更强附着力的薄膜，同时在微米级别的厚度下仍能保证一致性和成分均匀性；但在采用CVD时，较厚的薄膜倾向于结晶，晶界可能会成为水汽渗透的途径" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "R13", "R14" ], "text": "13-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。采用等离子体增强化学气相沉积（Plasma enhanced chemical vapor deposition，PECVD）降低制备工艺温度是一种有效的方法，与300~800 ℃的原始热CVD相比，PECVD可以在250 ℃以下相对较低的沉积温度下进行，并且沉积具有良好的台阶覆盖率，已经实现工业规模的OLED封装薄膜应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "与CVD方式不同，ALD是将气相前驱体以脉冲形式交替通入反应器中，这恰与连续通入气体反应的CVD不同，所以ALD在制备薄膜的均匀性、保形性以及厚度控制等方面都具有明显的优势。与CVD类似，ALD也可以采用等离子增强方式降低沉积温度，等离子体增强原子层沉积（Plasma enhanced atomic layer deposition，PEALD）通过在工艺中引入等离子体轰击提供能量，提高了前驱体与反应气体间的化学反应活性，有效降低了活化能，使封装易于在低温下进行并增加了表面的反应速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在等离子体沉积工艺中，添加稀释气体He或Ar可以提高等离子体稳定性，从而沉积出更均匀的薄膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但PEALD使用的各种等离子气体往往也会对直接暴露表面的衬底造成侵蚀，底层薄膜可能会因离子轰击而被破坏。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　ALD原理" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "ALD沉积具体过程分为两种：（1）化学吸附自限制过程——首先通入前驱体A到衬底材料表面，待前驱体A完全吸附饱和，此时通入惰性气体进行吹扫清洗，将多余的前驱体A吹扫清洗完毕后，再通入前驱体B与前驱体 A进行化学反应生成薄膜。即第一种反应是将前驱体通入到衬底材料表面后，通过前驱体间化学反应，化学吸附在衬底表面，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）所示。 （2）顺次反应自限制过程——先由活化剂活化衬底材料表面，再通入前驱体A与衬底材料表面相反应形成中间体，当衬底表面的功能化基团消耗完时，前驱体A与衬底材料的反应将停止；之后再通入前驱体B，前驱体B便会和中间体反应形成沉积薄膜，直至表面不存在可吸附位时达到饱和，将剩余前驱体气体吹扫出，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示。值得注意的是，该过程的第二步，即前驱体A与衬底材料反应将产生副产物，因此需要通入气流将副产物反应掉或排掉。由此可知，前驱体A是否能够在活化的衬底材料表面快速形成稳定的化学吸附层是后续反应形成薄膜的必要条件。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）化学吸附自限制过程；（b）顺次反应自限制过程。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Chemisorption self-limiting process. （b）Sequential reaction self-limiting process." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865196&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865205&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865200&type=", "width": "76.55621338", "height": "52.50689697", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "ALD是前驱体交替通入反应腔体后，在衬底表面附着并通过化学反应形成一层层的薄膜。由此可见，影响ALD薄膜的材料因素主要是沉积前驱体、吹扫气体和衬底。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　利用ALD技术制备有机电致发光器件的透明薄膜封装" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　ALD单层无机薄膜封装" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "ALD单层膜结构简单、沉积过程稳定、制造工艺成本低，适合作为光电子器件的TFE，但单层氧化物薄膜的水汽阻隔性能和机械性能较差，可采用叠层结构进行补足。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1.1　不同材料的单层氧化物薄膜封装" } ], "level": "3", "id": "s3a1" } }, { "name": "p", "data": [ { "name": "text", "data": "ALD常见的薄膜材料有Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、MgO、SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等，其中Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "由于其优异的水汽阻隔性能和良好的光学透过率成为了研究最多的材料。韩国国家管理电子与电信研究学院Lee" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "指出，当Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为TFE层时，在可见光区域具有很高的透明度，50 nm厚度的TFE透过率" }, { "name": "text", "data": ">" }, { "name": "text", "data": "98%。韩国汉阳大学Jeon等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过原子力显微镜（Atomic force microscope，AFM）分析发现，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层的表面非常光滑，均方根（Root mean square，RMS）粗糙度为0.34 nm，而ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层比Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层显示出更大的RMS（1.09 nm）粗糙度。在单层情况下，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层显示出比ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层更好的水汽阻隔性能，Ca试验测得100 nm Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层的WVTR为9.5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，100 nm ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层的WVTR为1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。实验还表明Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的多层膜结构有着更好的水汽阻隔性能，当Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "交替沉积一个ALD周期时，WVTR降至9.9×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。他们将多层膜沉积在聚醚砜（Polyether sulfone，PES）薄膜上用于测量WVTR值，同时沉积于p型硅衬底上用于分析薄膜性质。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）~（d）展示了2 nm/2 nm多层膜在低分辨率和高分辨率下的透射电子显微镜（Transmission electron microscopy，TEM）图像和1ALD循环周期/1ALD循环周期下多层膜在低分辨率和高分辨率下的TEM图像。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（e）~（j）分别为Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "多层膜（25 nm/25 nm、10 nm/10 nm、2 nm/2 nm、1循环周期/1循环周期）封装结构示意图。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）~（b）2 nm/2 nm多层膜分别在低分辨率下和高分辨率下的TEM图像；（c）~（d）1ALD循环周期/1ALD循环周期的多层膜分别在低分辨率下和高分辨率下的TEM图像；（e）~（j）总厚度为100 nm的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "多层膜（25 nm/25 nm、10 nm/10 nm、2 nm/2 nm、1循环周期/1循环周期）封装结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Cross-sectional transmission electron microscopic images of 2 nm/2 nm multi-layer at low resolution（a） and high-resolution（b）. 1 cycle/1 cycle multi-layer：（c）low resolution，（d）high resolution. （e）-（j）Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " multi-layer（25 nm/25 nm，10 nm/10 nm，2 nm/2 nm，1 cycle/1 cycle） films deposited with a total thickness of 100 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865208&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865215&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865212&type=", "width": "156.92826843", "height": "55.85665894", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "因具有稳定的物理和化学性质被用于无机TFE，韩国延世大学Kim等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过PEALD（75 ℃的低温）在聚萘二甲酸乙二醇酯（Polyethylene naphtha late，PEN）衬底上沉积了SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜。该过程采用沉积前和沉积过程中都进行氧等离子体处理的方法，得到了70 nm的PEALD-SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜在37.8 ℃和100%相对湿度（Relative humidity，RH）环境下的WVTR值为7.73×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。他们通过在SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "沉积期间进行O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子体处理，以增加薄膜密度并形成曲折的缺陷路径；通过在沉积SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "之前对PEN进行O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子体处理，以增加PEN和SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "之间的薄膜附着力，得到的WVTR值为7.73×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，而未进行O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子体处理时WVTR为6.05×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。当O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子体在最佳处理时间1 s时，测得孔隙度和薄膜密度分别为0.79%和2.24 g·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "，未进行O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子体处理时分别为4.91%和2.14 g·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "。由此可使氧等离子体处理的薄膜致密性得到显著提升，因此表面等离子体处理有助于前驱体的初始粘附，从而提高薄膜和聚合物衬底的粘附力，有助于致密薄膜的形成。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "是另一种常用的无机TFE材料。韩国汉阳大学Park" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在90 ℃较低温度下，通过PEALD在PES基板上沉积的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜在90 h老化后，OLED亮度能保持在初始时的52.5%。韩国科学技术学院Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜具有优异的水汽阻隔性能，测得在38 ℃和100% RH环境下100 nm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的WVTR值为5.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，这和同环境下Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的WVTR值几乎达到了同一级别；但单层TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的光学透过率较低，所以可以将Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "制成叠层纳米叠层结构来提高光学透过率。这是因为材料折射率与光学透过率成反比，通过在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（高折射率材料）中插入Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "或适当减小TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的厚度以减小薄膜整体的折射率，从而成功提升了TFE整体光学透射率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1.2　前驱体原料和掺杂杂质对封装薄膜的影响" } ], "level": "3", "id": "s3a2" } }, { "name": "p", "data": [ { "name": "text", "data": "不同氧化剂前驱体生长薄膜有不同的水汽阻隔性能。德国NaMLabgGmbH纳米材料实验室 Singh等在沉积温度为50 ℃、氧化剂前驱体的吹扫时间为脉冲时间一半时的测试条件下，得出了基于O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的ALD工艺优于H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O的结论。这是因为O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的气体粘度低于H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O，加快了薄膜的沉积速率；同时O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "易于消耗副产物甲基，改善了TFE的疏水性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R23", "R24" ], "text": "23-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "吉林大学Duan等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过AFM观察出O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基ALD制备的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的粗糙度低于H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O基ALD制备的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜。利用Ca测试法，在25 ℃和80%RH的环境下测得O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基ALD制备的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜WVTR为8.70×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O基ALD制备的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜WVTR为2.10×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。由此可看出，相同测试条件下，O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基ALD制备的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜拥有更好的致密性和表面均匀性。该团队还研究了不同氧源对TFE的影响，测试了在20 ℃和60%RH环境下，H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O基ALD厚度为80 nm的ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜WVTR值为3.74×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3 " } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，在同样环境下测得O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基ALD厚度为80 nm的ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜WVTR值为6.09×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。显然，以O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为氧源时沉积的薄膜有更好的致密性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "为不同氧源ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的TFE示意图。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同氧源ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的TFE示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Schematic diagram of ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "thin film encapsulation of different oxygen sources" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865220&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865228&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865224&type=", "width": "69.87518311", "height": "48.47328186", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "华南理工大学Peng等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O、O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "分别作为氧源，三甲基铝（Trimethylaluminum，TMA）作为有机金属前驱体A，在ALD沉积过程中分别交替通入以TMA+O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、TMA+H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O、TMA+H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O+O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为前驱体，制备了三种薄膜。在25 ℃和80%相对湿度的环境下，X射线反射器（X-ray reflectometry，XRR）测得TMA+H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O+O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为前驱体时Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜具有最高的膜密度（3.00 g·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "），WVTR为5.43×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5 " } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "；而TMA+H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O和TMA+O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为前驱体时，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的膜密度分别为2.95 g·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "和2.80 g·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "，WVTR值分别为9.64×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4　" } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由上述数据可知，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜相对较高的致密性和光学透过率有利于单层薄膜封装。Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现，掺杂金属杂质（如Ag、Al、Mg）单层膜的耐腐蚀性要优于纯氧化物单层膜，例如ZnO单层薄膜，若掺杂金属杂质，则将抑制—OH基团沿晶界化学吸附时势垒增大，这些金属杂质可以代替Zn阻碍ZnO的结晶。他们发现，当把锌、铝、镁按比例制成锌铝镁三元合金镀层（ZnO、Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MgO, ZAM）板材时，ZAM膜逐层结构的缺陷解耦效应使得薄膜中的缺陷位置随着堆叠层而改变，提高了抗腐蚀性。实验及应用表明，其耐腐蚀性是一般镀锌钢板的15倍，" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "为其阻隔机理图。韩国科学技术院Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在进行弯曲实验时，基于纳米叠层结构（ZnO、Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MgO、Nano laminate，ZAM NL）的多层膜在0.63%的弯曲应变下WVTR值增加了一个数量级，得出了30 nm厚的ZAM NL膜比相同厚度的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层膜具有更好的水汽阻隔性能的结论。由上述结果可知，纳米叠层结构具有优异的抗水腐蚀性能和抑制结晶的能力，特别是在恶劣环境下，其较于单层的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜有更好的稳定性和机械柔性。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "锌铝镁三元合金镀层阻隔层阻隔机理" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Barrier mechanism of ZAM structure" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865235&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865242&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865239&type=", "width": "72.47467041", "height": "63.07666016", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了验证含碳量对器件机械柔性的影响，韩国成均馆大学Chae等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "进行了不同含碳量对缓解外界因素造成表面缺陷的研究，他们通过对不同含碳量的过量前驱体TMA沉积的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜进行测量，测得25 nm厚的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的WVTR值随着含碳量的增加而降低。多层复合膜（Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和富碳Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "交替沉积）情况下，进行弯曲半径为1.5 cm的1 000次弯曲实验后，富碳的多层复合膜WVTR值增加93%，而单层低碳膜则增加 367%。可见，在相同的测试条件下，富碳的多层复合膜比Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层膜有更好的水汽阻隔性能和机械柔性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "以上结果表明，O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "基ALD制备的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜拥有更好的致密性和表面均匀性，多个研究团队均实验得出了基于O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的ALD工艺优于基于H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O的ALD工艺的结论，而交替通入O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O这两种不同氧源将得到致密性最高的薄膜。此外，掺杂杂质的单层TFE有着更好的水汽阻隔性能、稳定性与机械性能。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1.3　厚度对封装效果的影响" } ], "level": "3", "id": "s3a3" } }, { "name": "p", "data": [ { "name": "text", "data": "薄膜的厚度影响着封装的属性，如水汽和氧气的阻隔性能、光学透过率和机械性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } } ], "rid": [ "R31", "R32" ], "text": "31-32", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通常，较厚的膜更能阻止水汽的渗透，但较厚的薄膜机械性能（残余应力增加）和光学透过率会受到影响。韩国汉阳大学Sung等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用TMA和O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为前驱体，在80 ℃的环境下沉积厚度分别为15，20，25，50，100 nm的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，从薄膜对OLED降解（由于Al和Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "热膨胀系数的差异，过厚的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜沉积导致Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "以及下面的铝层产生裂纹，裂纹导致水汽阻隔性能下降从而使封装内部的OLED快速退化）的影响和WVTR值进行考量。由于亚临界厚度区域有着类似于凹坑的表面缺陷特征，这将导致周围大气中的水汽侵入使封装结构的水汽阻隔失效。经过实验对比得出25 nm厚Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜有着最佳的水汽阻隔性能。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "德国德勒斯顿工业大学Meskamp等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了WVTR对ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度的依赖性。以TMA和O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为前驱体，在38 ℃和15%~20%相对湿度下测得的15~100 nm ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的WVTR如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。薄膜厚度在15~25 nm范围时，发现WVTR值随Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度基本呈指数下降；薄膜厚度大于25 nm时，WVTR值随Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度按次指数下降的规律。这是因为随着Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜厚度的增加，薄膜缺陷密度降低，使得WVTR和OLED降解率降低。而在较高厚度范围内，随着Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚度的增加，WVTR下降曲线呈现饱和状态，说明Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜厚度大于25 nm时的缺陷（例如可能在处理样品时造成划痕或颗粒脱落）比15 nm时更难覆盖。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的WVTR值和用电钙腐蚀测试测量的薄膜厚度的相关函数" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Correlation function of WVTR values of ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film and film thickness measured by Ca tests" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865248&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865254&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865252&type=", "width": "73.51934814", "height": "50.29598999", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "裂纹解耦效应是一种通过解耦薄膜中的裂纹来增加水氧渗透路径的现象，韩国科学技术院Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过固定总阻挡层为30 nm时，将子层厚度从1.25 nm增加到5 nm，沉积了Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的纳米叠层结构。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "展示了Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米叠层的TEM图像以及膜厚度对WVTR和膜应力的影响趋势。结果发现，当沉积厚度为3 nm的子层时，裂纹解耦效应将最大化，即Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米叠层结构的裂纹缺陷被最大解耦，此时WVTR值最低，为2.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "AT叠层封装结构的优化。 （a）子层厚度分别为1.25，2.1，3，5 nm的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米叠层结构（在纳米叠层处）的TEM图像和WVTR，比例尺为10 nm；（b）WVTR和AT纳米叠层结构的膜应力与薄膜总厚度的函数关系趋势" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Optimization of the encapsulation barrier structure. （a）TEM images and WVTRs of the Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " nanolaminate layer（AT nanolaminate layer） with sub-layer thicknesses of 1.25， 2.1， 3， 5 nm， respectively. Scale bar：10 nm. （b）WVTR and membrane force of the AT nanolaminate barrier as a function of the total barrier thickness（with error bars that indicate standard deviation）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865257&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865263&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865260&type=", "width": "152.39709473", "height": "71.48657227", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1.4　沉积温度、ALD循环周期、吹扫时间和脉冲时间对薄膜性能的影响" } ], "level": "3", "id": "s3a4" } }, { "name": "p", "data": [ { "name": "text", "data": "大量研究表明，沉积温度和时间会影响薄膜的表面形貌。通常认为沉积温度在ALD温度窗口内时，各种生长参数（如ALD循环周期、吹扫时间、沉积环境等）几乎不会对薄膜生长质量产生影响；但若沉积温度落在窗口外时，这些因素将会影响薄膜的生长质量。较高的沉积温度虽然可以增加沉积速率，但也可能增大对器件的损伤；而较低的沉积温度由于未达到反应所需的活化能，沉积出来的薄膜表面形态上会存在各种缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } } ], "rid": [ "R36", "R37", "R38" ], "text": "36-38", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "美国杜邦研究院Carcia等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "进行了温度对薄膜性质的研究，他们发现沉积温度为50 ℃和75 ℃时较厚的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜与沉积温度为100 ℃时较薄的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜有相同的性能。这与其他研究人员的报道相符合，即在相对高温的沉积温度下，薄膜的封装属性会得以改善。韩国庆熙大学Kim等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在PES衬底上50 ℃条件下测量了厚度为15 nm的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的水汽阻隔性能，其WVTR为3.5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "；将沉积温度升高到120 ℃或150 ℃时，WVTR降低至4×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。他们认为在高温下的沉积能够有效消去反应中的副产物，从而提升了薄膜的致密性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "吉林大学Duan等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现，在ALD过程中，产生的CH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "等副产物是瞬态位阻产生的重要原因之一。通过采用减少一半的吹扫时间以维持多余前驱体溶液的吸收平衡，并结合采用多次短脉冲的方法，成功减少了前驱体和衬底之间的瞬态空间位阻，消除了二者的活性位点的阻塞，保证了分子间的吸附性，从而得到了致密的薄膜。他们还发现吹扫时间对薄膜表面形态的影响，分别在沉积温度为80 ℃、吹扫时间为30 s时和在沉积温度为200 ℃、吹扫时间为10 s时，制备了80 nm厚 ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜。由" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "可以看出两种薄膜的表面粗糙度相似，这表明在低温下制备的薄膜可通过增加吹扫时间使薄膜表面均匀沉积。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜在不同沉积条件下的AFM图像。（a）80 ℃，PGT=30 s；（b）200 ℃，PGT=10 s。实验中AFM的扫描面积为1.0 μm×1.0 μm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "AFM images of Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film at different deposition conditions. （a）80 ℃， PGT=30 s. （b）200 ℃， PGT=10 s. The scan area in AFM experiment was 1.0 μm × 1.0 μm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865266&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865271&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865268&type=", "width": "77.87573242", "height": "33.06408691", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "增加脉冲时间可保证反应充分进行，印度新德里CSIR国家物理实验室Singh等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在沉积温度为50 ℃的条件下，通过控制臭氧脉冲的持续时间，用XRR测试Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的封装性能，发现当臭氧脉冲时间达到15 s以上时，获得的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜拥有更好的致密性和相对较低的厚度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "沉积温度应落在ALD温度窗口内，因为较高或较低的沉积温度都将对薄膜封装产生不利影响。另外，通过增加吹扫时间、脉冲时间和进行多次ALD短脉冲的方法可使薄膜具有良好致密性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "我们根据单层无机TFE材料、前驱体和厚度的不同以及考虑测量环境的差异，在" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中列出了各种单层无机TFE的WVTR值。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "单层无机TFE的WVTR统计" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Single-layer barrier films WVTR sheet" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "材料（方法）" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "厚度/nm" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "工作环境" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（温度/℃和相对湿度/%）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": 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"name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为无机层，将二者旋涂到聚对苯二甲酸乙二醇酯（Polyethylene terephthalate，PET）衬底上；然后将SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "嵌入S-H纳米复合材料，此时作为有机层填料的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米颗粒能使纳米叠层结构的扩散路径增加。结果显示，该叠层降低了光的散射程度并延长了水汽扩散路径，即提高了光学透过率并降低了WVTR值。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "美国太平洋西北国家实验室Graff等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现，在有机-无机叠层封装下，封装薄膜延迟了瞬态期间的渗透，增加了扩散路径，使渗透可能会延迟几年后才发生。除此之外，福州大学Zhou等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了插入分子层沉积（Molecular layer deposition，MLD）也可以释放无机层中的应力，他们采用15/2.5 nm Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/alucone纳米叠层，研究结果表明，适当厚度的alucone层可以在ALD薄膜开裂后延长渗透路径以减少水汽在缺陷区的渗透，并降低薄膜应力，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/alucone（15/2.5 nm）纳米叠层提供了相对低的水汽透过率，在25 ℃环境下，纳米叠层数量为5.5的TFE的WVTR值为1.44×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。吉林大学Duan等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过MLD制得alucone薄膜作为TFE的缓冲层，并用alucone中的甲基消耗氧等离子体，保护了器件免受PEALD的影响。通过MLD/PEALD 方法得到在30 ℃和80% RH下的最低WVTR 为1.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5 " } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，同时，在该环境下暴露2 000 h后器件仍保持96%初始效率。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "（a）ALD薄膜开裂时MLD层能够延长水汽扩散路径；（b）基于MLD膜的干燥剂效应，减缓水汽透过裂缝的传输。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "（a）The MLD layer can prolong the moisture diffusion pathways when the ALD film is cracked. （b）Slowing down the water transmission through the cracks based on the desiccant effect of the MLD films." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865280&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865285&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865283&type=", "width": "72.85577393", "height": "33.53149414", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "上海大学Zhang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "也研究了基于TMA和乙二醇作为前驱体，MLD在85 ℃下沉积30 nm厚的alucone作为有机层，通过热ALD分别在85 ℃下沉积15 nm的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和ZrO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，在e-Ca实验下测得最低WVTR值为8.5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "同时，有机层的插入也能改善TFE的光学透过率，韩国首尔大学Ahn等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过优化GO的体积百分比，成功开发了VR/GO（V" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "5 " } ] }, { "name": "text", "data": "nanorod （VR）/Graphene oxide（GO），VR/GO）纳米复合薄膜，因为形成了渗滤膜结构，其光学透过率可以保持在94.9%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "紫外线（Ultraviolet，UV）固化有机环氧树脂的覆盖应用能够优化薄膜结构。中国台湾大学Tsai等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/HfO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米叠层结构，其降解速率比Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层结构降低了2倍；但Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/HfO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "在封装器件时需要UV 固化环氧树脂作为覆盖层，因为Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/HfO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的厚度较小，在器件表征和处理过程中容易受到意外损坏，因此UV固化环氧树脂层为薄膜提供了机械保护。美国柯达公司Ghosh等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "也进行了相关研究，他们将Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "旋涂到PET衬底上，然后用UV粘结玻璃对OLED进行封装，在85 ℃和85% RH条件下进行了1 000多小时的测试后，发现OLED性能并没有明显下降，说明OLED未明显受到UV环氧树脂的侵蚀。因此，环氧树脂作为保护层，并未对器件本身造成有效侵蚀；而保护层的插入为TFE提供了一定的机械保护，并使OLED器件在空气中的降解速率与储存在无氧气和水汽的环境中近乎一致。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "交替通入有机前驱体能够缓解TFE表面缺陷，提高其水汽阻隔性能和机械性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。吉林大学Duan等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过原子层半反应制备了聚甲基丙烯酸甲酯（Poly methyl methacrylate，PMMA）/TMA薄膜，OLED光学透过率可以达到75.72%，实验中比较了2 000次弯曲后裸PMMA上Au膜薄层电阻（Sheet resistance，Rs）值显著增加的情况；而通过交替通入前驱体TMA，PMMA/TMA在基板上沉积的金膜弯曲后仅有轻微Rs增加。这是因为采用交替前驱体 TMA使得PMMA衬底膜表面的羰基转化为高活性甲基，从而通过配位反应固定了Au原子。实验测得在60 ℃和80% RH的环境下，其WVTR值达到2.123×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，且PMMA/TMA的腐蚀速率低于裸PMMA薄膜。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2.2　有机层插入石墨烯或其他金属电极层的影响" } ], "level": "3", "id": "s3b2" } }, { "name": "p", "data": [ { "name": "text", "data": "低导热的封装会导致OLED性能退化，所以常采用插入金属电极层的方法提高OLED的效率与寿命。韩国科学院Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备的电介质-有机金属封装结构如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（a）所示，封装具有良好的导热性，保证了OLED性能的可靠。但过厚的金属层会导致器件可折叠性下降以及OLED光学透过率降低，而过薄的金属层又无法达到预期效果。在这点上，石墨烯相对于Ag来说有着更为优异的水汽阻隔性能和导热能力，同时石墨烯也有很高的光学透过率和导电性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } } ], "rid": [ "R71", "R72", "R73" ], "text": "71-73", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "（a）Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Ag/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/S-H纳米复合材料/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）逐层处理方案示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；通过ALD在CVD石墨烯的一维缺陷位置上选择性铂生长：（c）CVD石墨烯中1D缺陷上选择性铂生长示意图，（d）500次ALD循环铂沉积后，玻璃衬底上CVD石墨烯的SEM图像，比例尺为2 mm，（e）1 000次ALD循环铂沉积后，玻璃衬底上CVD石墨烯的SEM图像，比例尺为2 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（f）Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/石墨烯叠层封装结构图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "（a）Schematic of Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Ag/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/S-H nanocomposite/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " barrier structure" }, { "name": "sup", "data": [ { "name": "text", "data": " ［" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （b）Schematics of layer-by-layer processing scheme" }, { "name": "sup", "data": [ { "name": "text", "data": " ［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". Selective Pt growth by ALD on one-dimensional defect sites of polycrystalline CVD graphene：（c）schematic of selective Pt growth on 1D defects in CVD graphene； （d）SEM images of CVD graphene on a glass substrate after 500 ALD cycles of Pt deposition， scale bar， 2 mm； （e）SEM images of CVD graphene with Pt deposition after 1 000 ALD cycles， scale bar， 2 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". （f）Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/graphene composite barrier layer" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865287&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865292&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865290&type=", "width": "162.96995544", "height": "103.43658447", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "韩国弘益大学Jeon等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过逐层处理方法在PET衬底上制备了GO/聚二烯丙基二甲基氯化铵（Poly diallyl dimethyl ammonium chloride，PDDA）多层膜。逐层处理方案示意图如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（b）所示。石墨烯作为无机材料沉积在聚合物塑料上，而UV环氧树脂和玻璃盖分别作为粘合剂和衬底，当GO板与PDDA聚合物在PET玻璃衬底上堆叠时，氧和水分子通过纳米叠层之间的针孔和层之间形成的通道扩散。由于这些通道非常狭小，可以看到这些分子的扩散会严重受限，类似于前文所述的延长了复杂的渗透路径，从而增加了渗透时间，所以GO/PDDA多层膜能够获得十分良好的水汽阻隔性能，经实验测得其WVTR值为10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "（环境为30 ℃和80%RH）。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "仁川大学Lee等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "进行了在CVD石墨烯上的铂沉积，使用ALD工艺时，金属选择性地沉积在CVD石墨烯的1D线缺陷处。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（c）显示了ALD在CVD石墨烯的1D缺陷位置选择性金属生长示意图，在这个过程中，金属纳米线代替了石墨烯的线性缺陷位置。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（d）显示了500次Pt-ALD循环后的CVD石墨烯SEM图像，可以看到铂沉积点主要以纳米线形状排列，ALD循环次数越多，铂在石墨烯上的覆盖率越大。" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（e）显示了1 000次ALD循环后金属铂在石墨烯上沉积的SEM图像。他们测量了石墨烯-铂金叠层结构的光学透过率和电导率，原始石墨烯样品在550 nm波长下光学透过率为97.7%；石墨烯样品中进行500次和1 000次ALD循环的光透过率分别为90%和60%左右。石墨烯薄膜的渗透速率会随着石墨烯层的增加而降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。仁川大学Lee等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钝化了石墨烯薄膜的缺陷，阻隔性能得到显著改善，如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（f）所示。此外，石墨烯还具有较高的断裂伸长率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在弯曲实验中，拉伸和扭转应力期间，石墨烯层的高延伸率成功防止了薄膜产生裂纹或其他表面缺陷。美国德州大学奥斯汀分校Ruoff等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了一种PMMA辅助转移石墨烯薄膜至目标衬底的工艺。该技术可为CVD石墨烯/ALD 氧化物薄膜的封装技术奠定基础。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2.3　插入SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层或有机层对释放封装应力效果的影响" } ], "level": "3", "id": "s3b3" } }, { "name": "p", "data": [ { "name": "text", "data": "CYTOP （Perfluoro（1-butenyl vinyl ether） polymer）是一种无定形含氟聚合物，具有良好的疏水性和优异的化学稳定性。美国佐治亚理工Graham等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了玻璃基板上的CYTOP和ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "叠层膜中有机膜厚度对封装性能的影响。他们发现随着CYTOP膜厚度的增加，减小了污染颗粒数量；但同时需要注意的是，较厚的CYTOP膜会使封装的残余应力增大，造成缺陷以致降低封装的水汽阻隔性能。经测试可知直接沉积在聚合物层上的ALD薄膜厚度大于200 nm时开裂的可能性将会增加，所以他们提出在聚合物层和ALD-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层之间插入带有残余应力的SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层，在有机-无机纳米叠层结构中插入具有残余应力的SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层能够有效缓解TFE产生裂纹。结构如" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "（a）所示。由" }, { "name": "xref", "data": { "text": "图 10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图 10" } ] } }, { "name": "text", "data": "（b）可以看出聚合物层对裂纹张开位移和裂纹驱动力几乎没有任何抵抗力，插入SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层后，降低了ALD薄膜层附近的平均应力，同时降低了开裂概率以及开裂驱动力。他们还通过插入SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层，帮助释放了Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/HfO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米叠层的应力，使其开裂概率大大降低。在Vitex system提出的Barix方法中，聚合物用于帮助分离针孔和释放应力，使有机-无机杂化TFE的阻隔性能与玻璃盖相当。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "（a）ALD层沉积在CYTOP的SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层上结构图；（b）引入一层100 nm厚的SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜前后，作用于通道裂纹的拉伸应力对比示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.10" } ], "title": [ { "name": "text", "data": "（a）Structures of ALD layer deposited on SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " layer on CYTOP. （b）Schematic diagram of the comparison of tensile stress acting on channel cracks before and after introducing a 100 nm thick SiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " film." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865296&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865302&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865299&type=", "width": "158.79614258", "height": "39.23094177", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在有机-无机叠TFE中，有机层的插入使无机层与下层解耦，同时有机层释放封装结构的内应力。韩国成均馆大学Cho等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "探究了有机层插入在不同厚度无机层下TFE的机械性能。他们测得50 nm厚Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的临界拉伸应变和压缩应变分别为1%和0.8%，施加超过临界值的应变时，封装层会在重复折叠过程中受损，所以沉积时有必要考虑减小TFE厚度（但此时WVTR又会有所上升，应权衡二者）。他们以TMA和O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为前驱体，使用正己烷（C" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": "）和氩等离子体进行沉积作为沉积聚合物层，该等离子体聚合物层与ALD生长的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层交替沉积形成有机-无机TFE多层膜。实验得出，该有机-无机多层TFE可以在弯曲半径为1 mm的重复折叠中保持稳定，5 nm厚Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的临界拉伸应变约为2.4%。综上可知，为了保持稳定性，TFE厚度应大于某一临界厚度。韩国成均馆大学SEO等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在80 ℃温度下沉积了1 μm等离子聚合己烷/六甲基二硅氧烷，在进行半径为2 cm的10 000次弯曲循环后，该有机-无机多层膜的Ca腐蚀时间为16 h;而相同条件下，单层Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的Ca腐蚀时间仅为10 h。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "韩国科学院Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用热ALD在70 ℃下沉积了Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和ZnO的30 nm厚无机多层薄膜（各3 nm交替沉积），结构和横截面如" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "（a）~（c）所示。实验中进行了以3 cm为弯曲半径的1 000次弯曲实验，30 ℃和90%RH下e-Ca腐蚀测得无机叠层封装的WVTR从4.92×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "增加到1.73×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "；而加入硅溶胶-凝胶/环氧树脂薄膜后，WVTR从1.91×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "仅增加至4.05×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " g·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·d" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "（d）展示了不同纳米叠层数量下进行弯曲实验后归一化电导随时间的变化。" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "（e）展示了不同纳米叠层数量下弯曲实验前后WVTR值的比较。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "纳米叠层结构示意图和横截面图像：（a）纳米叠层数量为2.5的纳米叠层结构图，（b）纳米叠层结构的总堆叠图像，（c）纳米叠层数量为1的纳米叠层和S-H纳米复合材料放大图；机械性能测试：（d）弯曲实验后的归一化电导与时间曲线，（e）弯曲实验前后 WVTR 值的比较" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.11" } ], "title": [ { "name": "text", "data": "Schematic diagram and cross section image of the hybrid nano-stratified moisture barrier： （a）2.5 nm dyads stack with nano-stratified structure， （b）total stack image of the hybrid nano-stratified moisture barrier， （c）enlarged view of 1 nm dyad（nano-stratified stack and S-H nanocomposite）. Flexibility test： （d）normalized conductance " }, { "name": "italic", "data": [ { "name": "text", "data": "vs" } ] }, { "name": "text", "data": " time graph after bending test with increasing dyads， （e）comparison of the WVTR values before and after the bending test" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865306&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865311&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865309&type=", "width": "150.20208740", "height": "80.29830933", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "以上弯曲实验和Ca测验数据均说明有机层的加入增加了薄膜的机械性能。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "最后，我们列出了有机-无机叠层TFE的WVTR数据统计，如" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "有机‐无机叠层TFE的WVTR统计" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Organic-inorganic multilayer barrier films WVTR sheet" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "无机材料" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（方法）" } ] } ] }, { "align": "center", 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"data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，全球原子层沉积设备年复合增长率（CAGR）为5.1%，中国是全球最大的原子层沉积设备市场，占有大约30%的市场份额" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是由于我国ALD规模化量产应用场景出现的较晚，目前ALD量产技术几乎被国外的设备大厂垄断。2022年以来，不断有国内量产型ALD设备制造，例如，拓荆科技、北方华创、盛美上海等企业开始布局ALD量产设备，表明国内半导体薄膜设备头部企业已经开始在ALD设备制造领域蓄势发力。ALD由于其自限制性具有膜厚可控的特点，制备的TFE能在厚度很薄的情况下达到高致密性、高机械柔性和高光学透射率，因此ALD技术适合未来面向可穿戴电子设备的发展与应用。目前，韩国三星和LG公司已经布局在OLED的制备工艺引入ALD技术。如果国内面板企业在OLED屏制程中可以成功导入ALD工艺，相信新的规模化量产应用场景将推动我国ALD设备产业的加速发展。" } ] }, { "name": "table", "data": { "id": "T3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "ALD技术应用" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.3" } ], "title": [ { "name": "text", "data": "Application of ALD technology" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "微电子" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "光学" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "生物" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "能源" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "纳米" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "催化" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "磁记录存储材料" } ] }, { "align": "center", "data": [ { "name": "text", "data": "表面等离激光" } ] }, { "align": "center", "data": [ { "name": "text", "data": "生物检测电子器件" } ] }, { "align": "center", "data": [ { "name": "text", "data": "三维固态锂电池" } ] }, { "align": "center", "data": [ { "name": "text", "data": "微纳机电系统" } ] }, { "align": "center", "data": [ { "name": "text", "data": "颗粒和高深宽比结构" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "MOSFET器件" } ] }, { "align": "center", "data": [ { "name": "text", "data": "光子晶体" } ] }, { "align": "center", "data": [ { "name": "text", "data": "生物模板和仿生" } ] }, { "align": "center", "data": [ { "name": "text", "data": "纳米结构光电极" } ] }, { "align": "center", "data": [ { "name": "text", "data": "单分子传感器" } ] }, { "align": "center", "data": [ { "name": "text", "data": "负载型金属催化剂" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "随机存储器" } ] }, { "align": "center", "data": [ { "name": "text", "data": "光学微腔" } ] }, { "align": "center", "data": [ { "name": "text", "data": "生物相容性涂层" } ] }, { "align": "center", "data": [ { "name": "text", "data": "光电化学分解水" } ] }, { "align": "center", "data": [ { "name": "text", "data": "磁隧道结器件" } ] }, { "align": "center", "data": [ { "name": "text", "data": "氧化物催化剂" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "阻变存储器" } ] }, { "align": "center", "data": [ { "name": "text", "data": "其他光学器件" } ] }, { "align": "center", "data": [ { "name": "text", "data": "生物传感器" } ] }, { "align": "center", "data": [ { "name": "text", "data": "表面钝化" } ] }, { "align": "center", "data": [ { "name": "text", "data": "纳流体器件" } ] }, { "align": "left", "data": [] } ], [ { "align": "center", "data": [ { "name": "text", "data": "FET器件" } ] }, { "align": "left", "data": [] }, { "align": "center", "data": [ { "name": "text", "data": "聚合物" } ] }, { "align": "center", "data": [ { "name": "text", "data": "表面敏化" } ] }, { "align": "left", "data": [] }, { "align": "left", "data": [] } ], [ { "align": "center", "data": [ { "name": "text", "data": "阻挡层" } ] }, { "align": "left", "data": [] }, { "align": "left", "data": [] }, { "align": "center", "data": [ { "name": "text", "data": "能带调控" } ] }, { "align": "left", "data": [] }, { "align": "left", "data": [] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "籽晶层" } ] }, { "align": "left", "style": "border-bottom:solid;", "data": [] }, { "align": "left", "style": "border-bottom:solid;", "data": [] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "燃料电池" } ] }, { "align": "left", "style": "border-bottom:solid;", "data": [] }, { "align": "left", "style": "border-bottom:solid;", "data": [] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865328&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865324&type=", "width": "162.79998779", "height": "47.69789124", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　结论与展望" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "柔性OLED显示器件的快速发展对封装技术提出了更高的要求，传统的盖板方式已经无法满足需求。基于ALD的单层、有机-无机纳米叠层结构应用于OLED的TFE技术可以在实现柔性封装的同时，有效减少环境中水汽及氧气对OLED的性能影响并延长其使用寿命。因此，有机-无机叠层薄膜结构有望成为TFE的主流技术之一。随着有机-无机叠层结构的发展，我们预计以下研究方向可能会存在机会：（1）产业化应用。实验室中原子层沉积制备的TFE虽然具有良好的致密性、透光率、机械性能和抗腐蚀性等优异性能，但未来从实验室走向产业化，还有很多问题需要克服，例如沉积温度高、速度慢就是非常大的障碍，等离子增强和空间原子层沉积的方法为解决这些问题提供了可行的解决方案，值得更深入的研究。 （2）三维封装结构。在TFE结构方面，目前还都是采用二维平面结构。但二维结构在可拉伸或超柔性器件TFE技术的应用上会受到限制，未来可以利用原子层沉积的保形性沉积特点，形成三维封装结构，使器件保障水汽阻隔性能的同时，具有更优异的机械性能以及与周边材料间的应力匹配能力。 （3）材料体系的选择。目前较为常用的基于ALD技术沉积的TFE以氧化铝材料为主，但氧化铝长期使用中会存在水解的现象，实际上并不是稳定的封装材料，未来可以更多地关注氮化物体系，例如氮化铝、氮化硅等。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL. 20220159." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220159." } 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