High-brightness Yellow Light-emitting Diode in A Single Ga-doped ZnO∶Ga Microwire Heterojunction Enhanced Publication

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"email": "mmjiang@nuaa.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "缪", "givenname": "长宗", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MIAO", "givenname": "Chang-zong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "长顺", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Chang-shun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "阚", "givenname": "彩侠", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "KAN", "givenname": "Cai-xia", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "施", "givenname": "大宁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Da-ning", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "shi@nuaa.edu.cn", "data": [ { "name": "text", "data": "shi@nuaa.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "施大宁（1965-），男，江苏南京人，博士，教授，博士生导师，1999年于南京大学获得博士学位，主要从事凝聚态理论和计算纳米物理相关的研究。 E-mail： shi@nuaa.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865000&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865010&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865006&type=", "width": "24.89200211", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "施大宁" }, { "name": "text", "data": "（1965-），男，江苏南京人，博士，教授，博士生导师，1999年于南京大学获得博士学位，主要从事凝聚态理论和计算纳米物理相关的研究。 E-mail： " }, { "name": "text", "data": "shi@nuaa.edu.cn" } ] ] } ], "email": "shi@nuaa.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "南京工程学院 数理学院， 江苏 南京　211167", "data": [ { "name": "text", "data": "南京工程学院 数理学院， 江苏 南京　211167" } ] }, { "lang": "en", "label": "1", "text": "College of Mathematics and Physics， Nanjing Institute of Technology， Nanjing 211167， China", "data": [ { "name": "text", "data": "College of Mathematics and Physics， Nanjing Institute of Technology， Nanjing 211167， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "南京航空航天大学 物理学院， 江苏 南京　211106", "data": [ { "name": "text", "data": "南京航空航天大学 物理学院， 江苏 南京　211106" } ] }, { "lang": "en", "label": "2", "text": "College of Physics， Nanjing University of Aeronautics and Astronautics， Nanjing 211106， China", "data": [ { "name": "text", "data": "College of Physics， Nanjing University of Aeronautics and Astronautics， Nanjing 211106， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "基于半导体低维微纳结构构筑的可见光发光器件，特别是位于500 ~ 600 nm波段的黄绿光光源，因具有较高的发光效率、长寿命和低功耗等特点，在超高分辨率显示与照明、单分子传感和成像等领域有着广泛的应用价值。由于高性能低维黄绿色发光器件在发光材料制备、器件结构以及发光器件的 “Green/yellow gap”和 “Efficiency droop”等方面受到严重限制，极大地影响了低维微纳结构黄绿光发光器件的开发和应用。本文采用单根镓掺杂氧化锌（ZnO∶Ga）微米线和p型InGaN衬底构筑了异质结基黄光发光二极管，其输出波长位于580 nm附近，半峰宽大约为50 nm。随注入电流的增加，光谱的峰位和半峰宽几乎没有任何变化，也没有观察到InGaN基光源中常见的量子斯塔克效应。器件相应的色坐标始终处于黄光色域范围。更为重要的是，器件的外量子效率在大电流注入下并没有出现较大的下降。结合单根ZnO∶Ga微米线和InGaN的光致发光光谱，以及n‐ZnO∶Ga/p‐InGaN异质结能带结构理论，可以推断该制备器件的发光来自于ZnO∶Ga微米线和InGaN结区界面处载流子的辐射复合，器件的Droop效应得到明显抑制。实验结果表明，n‐ZnO∶Ga微米线/p‐InGaN异质结可用于制备高性能、高亮度的低维黄光发光二极管。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Due to low-dimensional semiconductor micro/nano-structures， visible light-emitting devices， especially for green/yellow light sources locating in the wavelengths of 500-600 nm， have reached a broad audience in ultrahigh resolution display and lighting， single-photon source， single-molecule sensing and imaging in life science and other fields. In developing high-performance green/yellow light-emitting devices， the preparation of light-emitting materials and device structures is highly restricted by the “green/yellow gap” and “efficiency droop”. In the present research， a new generation of yellow light-emitting diode， which is composed of a single Ga-doped ZnO microwire（ZnO∶Ga MW） and p-type InGaN substrate， is demonstrated at a wavelength of 580 nm together with a linewidth of about 50 nm. With increasing the drive current at high injection levels， hardly little variation in the spectral profiles， such as the main emission wavelengths and the linewidth， could be distinctly noticed， as well as the quantum Stark effect that has been normally observed in InGaN-based light sources. The color coordinate is well matched with the yellow of the REC.2020 standard. Interestingly， the external quantum efficiency of the device is relatively stable even at high current injection. By comparing with the photoluminescence properties of a ZnO∶Ga MW and p-InGaN film， the energy band structure of the as-fabricated n-ZnO∶Ga/p-InGaN heterojunction emission device was constructed. It is clearly inferred that the electroluminescence is derived from the generation of electron-hole recombination， which occurring close to the ZnO∶Ga/InGaN heterointerface， instead of the p-InGaN side. The experimental results show that the as-designed n-ZnO∶Ga MW/p-InGaN heterojunction can be used to fabricate high-performance low-dimensional yellow light-emitting diodes." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "黄光发光二极管" } ], [ { "name": "text", "data": "镓掺杂氧化锌微米线" } ], [ { "name": "text", "data": "铟镓氮" } ], [ { "name": "text", "data": "外量子效率" } ], [ { "name": "text", "data": "Droop效应" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "yellow light-emitting diode" } ], [ { "name": "text", "data": "Ga-doped ZnO microwire" } ], [ { "name": "text", "data": "InGaN" } ], [ { "name": "text", "data": "external quantum efficiency" } ], [ { "name": "text", "data": "Droop effect" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体可见光光源具有绿色环保、节能降耗以及寿命长等优点，广泛应用于照明、背光、显示、农业、医疗、通信等领域。但在可见光范围内，人眼较为敏感的黄绿光波段的发光材料与器件一直受限于“Green/yellow gap”和“Efficiency droop”" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5" ], "text": "1-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，有机和无机直接带隙半导体已经广泛应用于构筑InGaN基量子阱发光二极管、钙钛矿发光二极管、有机发光二极管等黄绿光发光器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R6", "R7", "R8", "R9", "R10", "R11" ], "text": "6-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以InGaN量子阱黄绿色发光二极管为例，为了实现黄光发射，需要增加InGaN量子阱材料中In的组分。但是，高In组分带来的InGaN量子阱的强压电场和较差的晶体质量又会导致光发射效率降低、半峰宽变宽以及发光颜色改变等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "R12", "R13", "R14" ], "text": "12-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；此外，由于应变极化电场的存在，InGaN基发光二极管的性能还会受到量子斯塔克效应的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R15", "R16", "R17" ], "text": "15-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，基于有机/无机量子点（包括有机发光二极管（Light-emitting diode，LED）、无机量子点LED、有机/无机钙钛矿量子点，或纳米晶材料等）构筑的黄绿光发光器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R18", "R19" ], "text": "18-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其性能严重受限于差的稳定性、低亮度和小尺寸发光器件所带来的发光效率急剧降低等因素" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R20", "R21", "R22", "R23" ], "text": "20-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "近年来，低维微纳米级光源在超高分辨率移动显示器、生物医学传感和细胞生物成像、定向靶向诊断与治疗等低维尺度上的需求引起人们广泛关注和研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } } ], "rid": [ "R24", "R25", "R26" ], "text": "24-26", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，设计和构筑的低维发光器件存在表面复合、俄歇复合、载流子外溢、电极损耗等，极大地影响低维黄绿光发光器件的量子效率。且随着器件尺寸的减小，器件的性能出现急剧的衰减" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } } ], "rid": [ "R27", "R28", "R29", "R30", "R31", "R32" ], "text": "27-32", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由InGaN基微/纳米结构（如纳米线、微米线、纳米线阵列等）制成的黄绿光发光器件虽然已被广泛报道，但它们需要使用昂贵的高温高真空生长设备、光刻设备和技术平台，以及复杂的后处理设备和技术等，这些关键因素极大地限制了InGaN基低维可见光光源的器件化和应用化。因此，开发低价且易于操作的材料和器件结构以实现低维微纳结构基黄绿光发光器件仍然是一个挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } } ], "rid": [ "R33", "R34", "R35" ], "text": "33-35", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文在实验上采用碳热还原反应法生长单根镓掺杂氧化锌（ZnO∶Ga）微米线(MW)，选择p型InGaN衬底做空穴注入层，构筑了n-ZnO∶Ga MW/p-InGaN异质结黄光发光二极管。在正向偏压驱动下，制备的器件发射黄光，相应发光峰的峰位位于580 nm左右，半峰宽大约为50 nm。随着注入电流的增加，n-ZnO∶Ga MW/p-InGaN异质结发光器件的色坐标始终位于黄光色域范围。且随着注入电流的增加，该器件的发光中心波长和半峰宽几乎没有任何变化，说明器件发光较为稳定。另外，基于能带模型详细阐述了n-ZnO∶Ga MW/p-InGaN异质结结构的电致发光机理，黄光的光发射来自于n-ZnO∶Ga/p-InGaN异质结结区界面，即ZnO∶Ga微米线注入的电子和InGaN衬底注入的空穴在两者结区界面的耗尽层辐射复合，这也是器件发光光谱随注入电流的增加没有发生变化的根本原因。该异质结发光器件的耗尽层分布在结区界面处，而不是InGaN衬底中，有效降低了衬底中高In组分导致的较高缺陷密度和更大的极化电场所带来的“Green/yellow gap”和“Efficiency droop”。该实验结果为制备高性能、低维可见光发光器件提供了一种全新的实验方案。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　材料生长" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "实验上采用碳热还原反应方法制备单根镓掺杂氧化锌（ZnO∶Ga）微米线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。首先将质量比为9∶1∶10的高纯度ZnO、氧化镓（Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）和碳（C）粉末经研磨之后充分混合，作为生长微米线结构的前驱体材料。然后，将混合物粉末放入刚玉舟（长×宽×高为4 cm×3.5 cm×2 cm）中，舟的上面放置一纯硅晶片（尺寸为3.5 cm×3.5 cm），硅晶片距离舟内反应源的垂直距离约1.55 cm。刚玉舟放置在水平管式炉内石英管中最高温区域。在材料生长过程中，石英管中通入高纯氩气体作为保护 性气体，气体流量为125 mL/min，生长温度为　　1 100 " }, { "name": "sup", "data": [ { "name": "text", "data": " " } ] }, { "name": "text", "data": "℃，反应时间为1 h。反应结束后待管式炉自然冷却，取出刚玉舟，便可在Si衬底上沉积大量的、单根的ZnO∶Ga微米线。通过改变刚玉舟中反应源的量、气流量和反应时间可实现ZnO∶Ga微纳结构的表面形貌、尺寸等可控制备。其中微米线的最大长度可达2.0 cm，直径范围为1~30 µm。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "选择单根ZnO∶Ga微米线，结合商业化的p型InGaN作为空穴注入层，制备单根微米线异质结电致发光器件，器件制备过程如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。首先，采用电子束高真空蒸镀设备在InGaN衬底上制备Ni/Au电极（30/45 nm），并结合掩模板在InGaN衬底上制备MgO薄膜（厚度约为5 μm），作为电子阻挡层阻隔器件的top电极和InGaN衬底之间的接触；然后，挑选一根直径约为10 μm、表面光亮的ZnO∶Ga微米线放在MgO沟道中，并在微米线上面放置ITO导电玻璃；完成n-ZnO∶Ga MW/p-InGaN异质结发光器件的制备。其中ITO和Ni/Au作为电极用于实现载流子注入。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "基于n-ZnO∶Ga MW/p-InGaN异质结制备黄光发光二极管器件流程图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "The fabrication process of n-ZnO∶Ga MW/p-InGaN heterojunction yellow light-emitting device" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865014&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865023&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865019&type=", "width": "64.94463348", "height": "53.57901001", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　表征与测试" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "使用扫描电子显微镜（SEM）表征单根ZnO∶Ga微米线的形貌。采用Keysight B1500A测量单根ZnO∶Ga微米线、InGaN衬底以及制备的n-ZnO∶Ga MW/p-InGaN异质结器件的电学特性。采用ANDOR探测器（CCD-13448）和Omni-" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": " 500光谱仪组成的微光谱检测系统测量器件的电致发光特性，发光器件的电致发光图像在光学显微镜下观察和拍摄。单根ZnO∶Ga微米线的光致发光（PL）、InGaN衬底的PL光谱使用He-Cd激光（激发波长为325 nm）作为激发光源，采用LabRAM-UV Jobin-Yvon光谱仪进行光致发光光谱测试。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "采用扫描电子显微镜（SEM）对生长的单根ZnO∶Ga微米线进行表征，" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）为单根ZnO∶Ga微米线的SEM图，插图为其相应的横截面端面图。从图中可以看出，实验生长的单根ZnO∶Ga微米线拥有标准的六边形结构形貌，且微米线的表面较为光滑。同时，采用XRD测试了ZnO∶Ga微米线的晶体结构，用于分析样品的单晶属性，相应的XRD结果如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示。对比ZnO六角结构的XRD标准卡片，可以得到ZnO∶Ga微米线的主要晶格衍射峰位于31.5°、34.1°和36.0°，分别对应于ZnO的（100）、（200）和（101）晶面。XRD测试结果表明采用该实验方法生长的单根ZnO∶Ga微米线具有标准的纤锌矿结构和较高的结晶质量。为了证明掺入的Ga元素能够在ZnO材料中取代Zn的位置形成替位Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "，我们采用EDS mapping对单根ZnO∶Ga微米线进行元素分析。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）所示，Zn、O和Ga三种元素在微米线中的分布较为均匀，说明Ga掺杂的效果较好。" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "（d）为单根ZnO∶Ga微纳米结构的高分辨TEM图像。可以测得Ga掺杂的ZnO微米线的晶格间距约为0.289 nm，该数值远小于Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的晶格间距（~ 0.470 nm），比非掺杂的ZnO的晶格间隙 （~ 0.260 nm）稍大。这种晶格膨胀应该是由于Ga在ZnO晶格中取代Zn的位置形成替位Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "所造成的。实验结果表明，我们在实验上成功实现了Ga掺杂ZnO微米线的生长和制备。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）单根ZnO∶Ga微米线的SEM图，插图为微米线的六边形横截面；（b）ZnO∶Ga微米线的XRD图谱；（c）单根ZnO∶Ga微米线的EDS元素分析，表明Zn、Ga和O三种元素均匀分布在微米线中；（d）单根ZnO∶Ga微米线的高分辨TEM图；（e）单根ZnO∶Ga微米线的PL光谱；（f）单根ZnO∶Ga微米线的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a）SEM image of a ZnO∶Ga MW， and the diameter is evaluated to about 10 μm. （b）XRD result of the as-synthesized ZnO∶Ga samples. （c）EDS elemental mapping of a ZnO∶Ga， illustrating its uniform composition of Zn， Ga and O species. （d）HRTEM picture of a ZnO∶Ga wire. （e）PL result of a ZnO∶Ga MW. （f）" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " characteristic curve of an individual ZnO∶Ga MW." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865028&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865039&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865033&type=", "width": "153.11758423", "height": "91.48373413", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（e）为单根ZnO∶Ga微米线的PL光谱，表现为较强的紫外光致发光现象，主峰位于380.0 nm，该紫外光发射归因于ZnO∶Ga微米线中自由激子的辐射复合。且PL光谱中几乎观察不到任何可见光波段的光发射，这说明生长的单根ZnO∶Ga微米线拥有较高的结晶质量和优异的光学特性。另外，我们研究了单根ZnO∶Ga微米线的电学特性，相应的电流-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "）曲线如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（f）所示。结果表明Ga掺杂ZnO微米线具有良好的电学特性，这为进一步制备高性能的电致发光器件提供了优异的半导体材料。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "接下来，我们采用p型InGaN衬底作为空穴注入层，结合单根ZnO∶Ga微米线构筑可见光发光二极管，制备了单根微米线n-ZnO∶Ga/p-InGaN异质结发光器件，Ni/Au电极作为正电极，ITO作为负电极。针对制备的n-ZnO∶Ga MW/p-InGaN异质结进行相应的电学性质测试。Ni/Au电极接正极，ITO导电玻璃接负极，在n-ZnO∶Ga MW/p-InGaN异质结发光器件的电致发光测试过程中，电子从ZnO∶Ga 微米线一侧注入，空穴由p-InGaN的另一侧注入。当施加的正向电压超过一定值时，异质结器件被点亮，可以观察到明亮的黄光发射现象，" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）为数码相机拍摄的黄光发光照片。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）基于n-ZnO∶Ga/p-InGaN异质结制备的单根微米线黄光发光二极管发光照片；（b）单根ZnO∶Ga微米线和p型InGaN衬底的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线；（c）单根微米线n-ZnO∶Ga/p-InGaN异质结的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线；（d）单根微米线n-ZnO∶Ga/p-InGaN异质结发光二极管的EL光谱；（e）单根微米线异质结发光二极管的EL光谱积分强度随注入电流的变化关系；（f）单根微米线异质结发光二极管EL峰位和半峰宽随注入电流的变化关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "（a）Photograph of a working n-ZnO∶Ga MW/p-InGaN heterojunction device at an input current of 1.5 mA. （b）Electrical properties " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " curves of individual ZnO∶Ga MW and p-InGaN template， indicating that Ohmic contacting behaviors of In-ZnO∶Ga and Ni/Au-InGaN are formed. （c）Electrical characterization " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " curve of the fabricated n-ZnO∶Ga MW/p-InGaN heterojunction. （d）EL spectra of n-ZnO∶Ga MW/p-InGaN heterojunction device was measured by varying current in the range of 0.5-3.0 mA. （e）Variation of the integrated EL intensity versus different injection current. （f）Variations of the peak positions and line width as functions of different input current." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865045&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865055&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865049&type=", "width": "159.73297119", "height": "95.18344879", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了证明实验上制备的n-ZnO∶Ga MW/p-InGaN异质结可用于实现微米级黄光发光二极管，我们首先对单根ZnO∶Ga微米线和p-InGaN衬底进行电学特性测试。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）为单根ZnO∶Ga微米线和p-InGaN薄膜的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线，呈现线性关系。这表明In电极和ZnO∶Ga微米线之间、Ni/Au电极和InGaN薄膜之间，形成了良好的欧姆接触。同时，我们对制备的n-ZnO∶Ga MW/p-InGaN异质结进行了相应的载流子传输特性测试，" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）是制备的单根微米线异质结器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "特征曲线，可以看出" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线表现出典型的整流特性，异质结器件的开启电压约为7.55 V。该开启电压远大于ZnO和InGaN的带隙，这是因为实验中使用的p型InGaN衬底上面制备了一层电子阻挡层AlGaN（Electron blocking layer, EBL），该介质薄膜增加了n-ZnO∶Ga/p-InGaN之间的带差，提高了器件的开启电压。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "制备的单根微米线n-ZnO∶Ga/p-InGaN异质结发光器件在正向偏压下，器件发出较为明亮的黄光。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（d）为器件在正向驱动电压下的电致发光光谱,可以看出，发光峰位于580 nm附近, 半峰宽大约为50 nm，为典型的黄光发射。随着注入电流的增加，发光强度出现明显的增强。该异质结发光器件光谱的积分强度随注入电流的变化关系曲线近似为线性增加关系，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（e）所示。光谱的半峰宽和发光峰中心波长随注入电流的变化关系如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（f）所示，随着注入电流的增加，相应的半峰宽和发光中心波长变化很小。说明基于n-ZnO∶Ga MW/p-InGaN异质结制备的黄光发光LED拥有较好的稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "实验上采用光学显微镜和CCD相机对器件的发光现象进行拍摄，进一步测试了单根微米线异质结LED的黄光发射现象。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）为拍摄的单根ZnO∶Ga微米线异质结，可以清楚地观察到六边形微米线。当施加的正向驱动偏压超过开启电压时，器件开始发射黄光，发光区域沿着微米线的长度方向分布。随着注入电流的增大，其亮度和发光区域明显变强变大，" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）~（i）为拍摄的单根微米线异质结LED的微区发光照片，从发光图像来看，黄光发射主要分布在微米线上。此外，微米线上所观察到的零星的黑暗区域应是由单根ZnO∶Ga微米线和InGaN薄膜界面的不均匀接触导致的。由此可见，将单根ZnO∶Ga微米线和p型InGaN衬底结合在一起构筑的异质结结构可用于开发单根微米线异质结基可见光发光器件。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "n-ZnO∶Ga MW/p-InGaN异质结发光二极管的光学发光图像。 （a）n-ZnO∶Ga MW/p-InGaN异质结发光器件的光学图像；异质结发光二极管在注入电流为0.5 mA（b）、0.8 mA（c）、1.0 mA（d）、1.5 mA（e）、2.0 mA（f）、 2.2 mA（g）、2.5 mA（h）、3.0 mA（i）时的发光图像，图中的尺度为30 μm。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Series of optical microscope EL images of the as-constructed n-ZnO∶Ga MW/p-InGaN heterojunction LED were captured when the device operated under different currents. （a）Optical microscope image of a single MW placed on p-InGaN substrate. （b）0.5 mA. （c）0.8 mA. （d）1.0 mA. （e）1.5 mA. （f）2.0 mA. （g）2.2 mA. （h）2.5 mA. （i）3.0 mA. The scale bar is 30 μm." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865061&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865069&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865065&type=", "width": "163.00000000", "height": "93.57348633", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "采用能带结构分析n-ZnO∶Ga MW/p-InGaN异质结基发光器件的黄光发射的物理机制。首先使用激发波长为325 nm 的He-Cd激光器作为激发光源，对单根ZnO∶Ga微米线和p-InGaN衬底进行光致发光测试。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）为室内拍摄的InGaN薄膜的光致发光光学照片，可以观察到明显的黄绿光发射现象。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）中蓝色实线为归一化的InGaN薄膜的PL光谱曲线，其发光中心波长位于550 nm，半峰宽为40 nm。同时，我们对n-ZnO∶Ga MW/p-InGaN异质结器件的电致发光进行了测试。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）中红色实线为归一化的n-ZnO∶Ga MW/p-InGaN异质结发光器件的电致发光光谱，其主发射峰位于~580 nm，光谱的半峰宽为50 nm。显然，单根微米线异质结器件的光发射并非来自于单根ZnO∶Ga微米线的近带边发射（~ 380 nm）和可见光发射（~ 510 nm），也不是来自单纯的InGaN衬底的光发射。由此可以推断，基于n-ZnO∶Ga MW/p-InGaN异质结实现的黄光发射来自于ZnO∶Ga微米线和InGaN衬底结区界面处电子-空穴的辐射复合。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）p型InGaN衬底的光学发光图像；（b）p型InGaN衬底的归一化PL光谱和n-ZnO∶Ga MW/p-InGaN异质结发光二极管归一化EL光谱；（c）n-ZnO∶Ga MW/p-InGaN异质结发光二极管的能带结构图；（d）n-ZnO∶Ga MW/p-InGaN异质结发光二极管的EL光谱对应的色坐标；（e）n-ZnO∶Ga MW/p-InGaN异质结发光二极管的相对外量子效率；（f）n-ZnO∶Ga MW/p-InGaN异质结发光二极管在注入电流为1.6 mA和2.0 mA时EL光谱的峰值随时间的变化关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "（a）Optical microscope PL image of p-type InGaN layer. （b）Comparison of normalized PL emission of p-type InGaN template and EL spectrum of the fabricated n-ZnO∶Ga MW/p-InGaN heterojunction LED. （c）The energy band diagram of the n-ZnO∶Ga MW/p-InGaN heterojunction LED under the operation of forward-biasing condition. （d）A set of CIE-1931 color coordinates converted from the obtained EL spectra. Inset： the enlarged area of the color coordinates for the single MW yellow LED by varying the input current of 0.3-5.7 mA. The coordinate of the red pentacle is the color coordinate of pure yellow light-emitting according to the Rec. 2020 standard. （e）Variation of the " }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": " as a function of various injection current. （f）Time-dependent EL intensity of the n-ZnO∶Ga MW/p-InGaN LED measured at the input current of 1.6 mA and 2.0 mA， respectively. The as-fabricated devices are in storage in the lab " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " indoor air environment for about 12-month." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865074&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865082&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865078&type=", "width": "163.33392334", "height": "98.62534332", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "此外，从测得的电致发光光谱中可以看出，光谱的发光中心波长和半峰宽随着注入电流的增加并没有发生明显的变化，即便是在较大的电流注入情况下，依然如此。这一发光特征表明，异质结器件中的发光耗尽层不会因为注入电流的增加而发生改变。为进一步研究n-ZnO∶Ga MW/p-InGaN异质结发光器件中载流子的传输过程和电致发光的物理机制，我们采用Anderson 能带模型给出了器件在外加正向驱动偏压下的能带结构图，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）所示。当施加较大的正向驱动电压时，由于p-InGaN衬底中的EBL薄膜和ZnO∶Ga之间存在较大的导带带差，使得注入的电子被局限于ZnO∶Ga微米线一侧，这是造成该异质结器件开启电压较大的原因。同时，由于p-InGaN衬底中InGaN量子阱层的存在，从正极中注入的空穴很难从p-InGaN层扩散至ZnO∶Ga微米线中，这是在异质结发光器件中没有观察到任何来自于ZnO∶Ga微米线的光发射的原因。因此，基于制备的n-ZnO∶Ga MW/p-InGaN异质结器件，其黄光发射是由于ZnO∶Ga微米线中的电子和InGaN衬底中的空穴在结区界面处的辐射复合引起。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "根据n-ZnO∶Ga MW/p-InGaN异质结发光二极管的EL光谱，可以计算出制备的单根ZnO∶Ga微米线异质结发光器件在不同注入电流下的色坐标，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d）所示。从色坐标图像可以看出，随着注入电流的增加（0.3 mA增加到5.7 mA），该n-ZnO∶Ga MW/p-InGaN异质结发光二极管的色坐标（" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": ", " }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "）值在（0.506 2，0.490 6）和（0.536 1，0.457 7）小范围内轻微变化，属于标准的黄光色域范围" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R38", "R39" ], "text": "38-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该结果与实验上测得的发光光谱和发光视频结果基本一致，进一步证明了制备的异质结LED为黄光发射。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了更好地证明器件在高电流下的稳定性和发光性能，我们引入了器件的外量子效率（" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "），计算公式为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865088&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865085&type=", "width": "44.70399857", "height": "7.95866632", "fontsize": "" } } } ] }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": "表示器件工作时发射的光子数，" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "in" } ] }, { "name": "text", "data": "表示注入器件的电子数，" }, { "name": "italic", "data": [ { "name": "text", "data": "e、 " } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865093&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865091&type=", "width": "1.94733346", "height": "2.70933342", "fontsize": "" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "、c、 I" } ] }, { "name": "text", "data": "分别对应元电荷、普朗克常数、光速和工作电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "λ" } ] } ] }, { "name": "text", "data": "为特定波长下光子的总能量。在本工作中，我们制备的n-ZnO∶Ga MW/p-InGaN异质结器件没有进行任何封装处理，不能采用积分球采集器件的发光功率，无法具体量化器件发光功率与注入电流之间的变化关系。因此，我们无法通过常规的方式测量出异质结器件的外量子效率的确切值。考虑到" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "公式中" }, { "name": "italic", "data": [ { "name": "text", "data": "e、ћ" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "为常数，我们采用相对外量子效率" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865099&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865095&type=", "width": "24.12999916", "height": "7.28133297", "fontsize": "" } } } ] }, { "name": "text", "data": "来体现" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "的变化趋势，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "表示特定波长下光谱仪接收到的光子能量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } } ], "rid": [ "R39", "R40" ], "text": "39-40", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。本文中用电致发光光谱的积分强度与注入电流比值等效表示" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（e）为器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "与注入电流（0.3~5.7 mA）之间的变化关系。当注入电流较低时，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "随注入电流的增加而急剧上升；当注入电流增加到1.0 mA时，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "达到最大值； 随着注入电流的继续增加，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "呈现缓慢下降趋势。在注入电流为1.0~5.7 mA范围内，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "最大下降率为9%，与之前报道的传统黄光LED相比较，本文制备的InGaN基黄光LED在较高注入电流下" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "REQE" } ] }, { "name": "text", "data": "下降率相对较低。这表明，我们构筑的LED具有较好的稳定性和发光效率，同时也反映出ZnO∶Ga微米线的高结晶质量能从一定程度上改善异质结器件的辐射复合效率。另外，在室温环境和室内相对湿度为20%~50%的测试条件下，我们对制备的n-ZnO∶Ga MW/p-InGaN异质结器件不做任何封装处理，保持器件的注入电流为1.6 mA和2.0 mA，通过长时间不间断地监测器件的发光强度，对器件的发光稳定性进行了研究。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（f）为异质结器件在实验室环境中存储12个月后的发光强度与存储时间之间的变化关系。结果表明，在常温环境中存储12个月，器件的电致发光强度变化很小，且电致发光光谱谱线基本不变。这说明器件具有较好的常温稳定性。此外，我们对不同尺寸和形貌的单根ZnO∶Ga微米线结合p-InGaN衬底制备的黄光发光二极管也进行了测试，结果表明除了发光峰位有稍许的移动外，器件发光特征参数仍属于标准的黄光发光。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文结合单根ZnO∶Ga微米线和p型InGaN衬底实现了n-ZnO∶Ga MW/p-InGaN低维黄光发光二极管。在正向驱动电流注入下，器件的发光中心波长始终位于580 nm附近，光谱半峰宽约为50 nm，相应的色坐标位于黄色色域，且色坐标值随注入电流的增加变化幅度较小，表明我们制备的n-ZnO∶Ga MW/p-InGaN黄光发光二极管较为稳定。本工作利用ZnO低维微纳结构结合p型InGaN衬底构筑了低维可见光发光器件，为micro-LED和nano-LED的可见光发射器件的设计和发展提供了新思路。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220171." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220171." } } ] } ] } ], "footnote": [], "reflist": { 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