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1.Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China
2.Tan Kah Kee Innovation Laboratory, Future Display Institue of Xiamen, Xiamen 361005, China
Published:05 July 2022,
Received:29 March 2022,
Revised:14 April 2022,
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王永嘉,杨旭,李金钗等.基于GaN微米阵列结构的单芯片白光LED有源区InGaN/GaN多量子阱结构设计[J].发光学报,2022,43(07):1130-1138.
WANG Yong-jia,YANG Xu,LI Jin-chai,et al.Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays[J].Chinese Journal of Luminescence,2022,43(07):1130-1138.
王永嘉,杨旭,李金钗等.基于GaN微米阵列结构的单芯片白光LED有源区InGaN/GaN多量子阱结构设计[J].发光学报,2022,43(07):1130-1138. DOI: 10.37188/CJL.20220115.
WANG Yong-jia,YANG Xu,LI Jin-chai,et al.Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays[J].Chinese Journal of Luminescence,2022,43(07):1130-1138. DOI: 10.37188/CJL.20220115.
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