Research Progress of Perovskite Direct X-ray Imaging Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "钙钛矿直接型X射线探测成像研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Research Progress of Perovskite Direct X-ray Imaging" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "孙", "givenname": "锡娟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SUN", "givenname": "Xi-juan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "孙锡娟（1999-），女，湖北恩施人，硕士研究生，2021年于三峡大学获得学士学位，主要从事钙钛矿X射线探测方向的研究。 E-mail： sun1511351@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862588&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862600&type=", "big": 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guangda_niu@hust.edu.cn" } ] }, { "$ref": "$.contribgroup.author[1].corresp[1]" } ], "bio": [ { "lang": "zh", "text": [ " 夏梦玲（1989-），女，湖北鄂州人，博士，研究员，2017年于武汉理工大学获得博士学位，主要从事钙钛矿半导体材料与辐射探测器件的研究。E-mail： xiamengling@whut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862603&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862611&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862607&type=", "width": "25.00000191", "height": "29.99917603", "fontsize": "" } ], "data": [ [ { "name": "text", "data": " 夏梦玲" }, { "name": "text", "data": "（1989-），女，湖北鄂州人，博士，研究员，2017年于武汉理工大学获得博士学位，主要从事钙钛矿半导体材料与辐射探测器件的研究。E-mail： " }, { "name": "text", "data": "xiamengling@whut.edu.cn" } ] ] } ], "email": "xiamengling@whut.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "许", "givenname": "银生", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": 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"牛广达（1988-），男，河北廊坊人，博士，教授，博士生导师，2016年于清华大学获得博士学位，主要从事金属卤化物X射线探测器及成像技术方向的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862626&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862626&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862626&type=", "width": "25.00000191", "height": "29.99917603", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "牛广达" }, { "name": "text", "data": "（1988-），男，河北廊坊人，博士，教授，博士生导师，2016年于清华大学获得博士学位，主要从事金属卤化物X射线探测器及成像技术方向的研究。" } ] ] } ], "email": "guangda_niu@hust.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "武汉理工大学 硅酸盐建筑材料国家重点实验室， 湖北 武汉　430070", "data": [ { "name": "text", "data": "武汉理工大学 硅酸盐建筑材料国家重点实验室， 湖北 武汉　430070" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Silicate Materials for Architectures， Wuhan University of Technology， Wuhan 430070， China", "data": [ { "name": "text", "data": "State Key Laboratory of Silicate Materials for Architectures， Wuhan University of Technology， Wuhan 430070， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "武汉理工大学 材料科学与工程学院， 湖北 武汉　430070", "data": [ { "name": "text", "data": "武汉理工大学 材料科学与工程学院， 湖北 武汉　430070" } ] }, { "lang": "en", "label": "2", "text": "School of Materials Science and Engineering， Wuhan University of Technology， Wuhan 430070， China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering， Wuhan University of Technology， Wuhan 430070， China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "华中科技大学 武汉光电国家研究中心， 湖北 武汉　430074", "data": [ { "name": "text", "data": "华中科技大学 武汉光电国家研究中心， 湖北 武汉　430074" } ] }, { "lang": "en", "label": "3", "text": "Wuhan National Laboratory for Optoelectronics， Huazhong University of Science and Technology， Wuhan 430074， China", "data": [ { "name": "text", "data": "Wuhan National Laboratory for Optoelectronics， Huazhong University of Science and Technology， Wuhan 430074， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "X射线探测广泛应用于医疗诊断，工业探伤、安防安检等各个领域，其中X射线面阵探测器是影像设备中的关键部件。利用半导体材料一步将X射线转换为电信号，可以实现高空间分辨率。钙钛矿材料由于X射线衰减序数高、载流子扩散距离长、辐照稳定等优势近年来已成为直接型X射线探测器的明星材料。本文简要介绍了直接型X射线探测原理、关键性质及核心材料，阐述了卤化物钙钛矿在直接型X射线探测器中的应用优势，综述了钙钛矿单像素探测器和与TFT集成的面阵探测器的特点及最新研究进展，最后，提出了目前面对的技术挑战和潜在解决方案，对基于卤化物钙钛矿的X射线面阵探测器的未来发展趋势进行了展望。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "X-ray detection is widely used in medical diagnosis， industrial flaw detection， security and other fields， and X-ray array detector is the key part of imaging equipment. High spatial resolution can be achieved by converting X-ray into electrical signals in one step using semiconductor materials. Perovskite material has become the star material of direct X-ray detector in recent years due to its advantages of high X-ray decay ordinal number， long carrier diffusion distance and irradiation stability. This paper briefly introduces the principle， critical nature and core materials of the direct type of X-ray detection， indicates the advantages of halide perovskite in applying in direct X-ray detector and expounds the characteristics and the latest research progress of both perovskite single pixel detector and TFT integrated array detector. Finally， the current technical challenges and potential solutions are put forward， and the future development trend of X-ray detector based on halide perovskite is prospected." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "X射线探测成像" } ], [ { "name": "text", "data": "钙钛矿" } ], [ { "name": "text", "data": "面阵探测器" } ], [ { "name": "text", "data": "TFT集成" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "X-ray imaging" } ], [ { "name": "text", "data": "perovskite" } ], [ { "name": "text", "data": "array detector" } ], [ { "name": "text", "data": "integrated with TFT" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "X射线探测技术已经被广泛应用于医疗影像" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、工业探伤" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和安检防控" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等诸多领域，与国计民生息息相关。然而，我国X射线探测技术和器件发展起步较晚，医学影像元器件等更是被列入“卡脖子技术”，核心技术受制于欧美国家。正因如此，《中国制造2025》中明确列出高性能医疗器械是要重点发展的十大领域之一。要想实现国内高水平医疗器材的自主性，设计出高灵敏度、低检测限、高分辨率的X射线探测器件势在必行。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "X射线面阵探测器是影像设备中的关键部件之一，可将X射线转换为人们可处理的信号，进而实现物体内部信息的直观成像反映。根据原理不同，当前X射线面阵探测技术可分为间接探测和直接探测。间接探测是利用闪烁体吸收X射线后发出可见光，再由其后端连接的光电探测器转换为电信号" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其优点是响应速度快、造价低廉，但由于光学折射或散射可能引起严重的光串扰问题，影响其空间分辨率。直接探测是利用半导体材料一步将X射线转换为电信号，载流子在电场作用下定向漂移然后被电极收集" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，大大降低了像素串扰问题，空间分辨率更高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；另外，直接探测可以实现更高的灵敏度，如卤化物钙钛矿中的电子-空穴对生成能一般为5~6 eV，而间接探测的常用材料Gd" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "S∶Tb（GOS）对应电子-空穴对生成能为16.7 eV，远高于直接探测材料。除此之外，直接探测的光电转换过程可一步将X射线光子转换为电信号，在构建器件时无需利用光电二极管将可见光转化为电信号，结构上更加简单，也可减小过程中的光散射和光串扰等问题。因此，直接探测器的装置可以更加紧凑、高效和小型化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "直接型X射线探测材料的关键性质主要取决于：（1）等效原子序数。随着原子序数的增加，元素对X射线的吸收逐渐增强：光电吸收（" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "∝" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "/E" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "为衰减系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "为原子序数，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "为光子能量）、康普顿散射（" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "∝" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "）。 （2）载流子传输性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一般以载流子在湮灭前单位电场下漂移的距离" }, { "name": "italic", "data": [ { "name": "text", "data": "µτ" } ] }, { "name": "text", "data": "积衡量，" }, { "name": "italic", "data": [ { "name": "text", "data": "µ" } ] }, { "name": "text", "data": "是载流子迁移率，" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": "是载流子的寿命，" }, { "name": "italic", "data": [ { "name": "text", "data": "μτ" } ] }, { "name": "text", "data": "值的增加可以显著提高器件的灵敏度。 （3）稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一般离子键的X射线抗辐照损伤能力更强，共价键则较容易在高能辐照下老化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "常见的光探半导体材料包括硅半导体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、锗半导体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、非晶硒" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，碘化汞" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等，由于无法兼顾以上要求而限制了其在X射线探测中的应用或性能提升。已商业化的碲化镉锌探测器（CZT）经过几十年的发展对662 keV光子的能谱分辨率达到0.48%，但CZT晶体中总是存在夹杂物和沉淀物等二次相，降低了探测器的局部电荷输运特性和在面阵探测中的均匀响应，且由于高制造成本限制了其广泛应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年来，金属卤化物钙钛矿由于其高等效原子序数（" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": ">" }, { "name": "text", "data": "60）、大的" }, { "name": "italic", "data": [ { "name": "text", "data": "μτ" } ] }, { "name": "text", "data": "值（10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "~10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、高电阻率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和辐照稳定性而成为了直接探测领域的研究重点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。作为一类优异的光电材料，金属卤化物钙钛矿主要存在三个方面的优势：（1）组成和结构可调" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R18", "R19" ], "text": "18-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，目前已经有CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "等数百种不同组成和结构维度的新型钙钛矿材料被报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } } ], "rid": [ "R20", "R21", "R22", "R23", "R24", "R25", "R26", "R27", "R28", "R29", "R30", "R31" ], "text": "20-31", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；（2）缺陷容忍的特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：常见的铅基钙钛矿材料中，Pb含孤对电子的6s轨道与卤素p轨道之间存在强反键耦合，这使其具有优越的缺陷容忍特性，缺陷容忍的特性保证了其长载流子寿命，尤其少子寿命是决定光电探测器性能的关键；（3）可低温溶液法制备" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。钙钛矿材料可使用现有的众多制造技术，如旋转涂层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、喷涂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、刀片刮涂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等，实现大面积制备；材料可以在低温和环境条件下加工，并且可以与多种辅助材料兼容，包括柔性基底等，有利于与像素化电极的一步集成。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基于这些优势，金属卤化物钙钛矿材料成为下一代直接型X射线探测半导体材料的最佳选择。本文综述了钙钛矿材料在直接型X射线面阵探测成像的研究进展，包括单像素或少像素钙钛矿探测器及其在成像方面的研究进展，以及与TFT集成的面阵探测器研究进展，并展望了钙钛矿X射线面阵探测器的未来发展方向。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　单像素/少像素探测器" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿材料在X射线直接探测领域展开了大量研究，产生了各种形式的卤化物钙钛矿，包括单晶" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } } ], "rid": [ "R37", "R38" ], "text": "37-38", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、纳米线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、纳米晶体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } } ], "rid": [ "R40", "R41" ], "text": "40-41", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、多晶厚膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } } ], "rid": [ "R42", "R43", "R44" ], "text": "42-44", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、准单晶膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等，并已被证明对于X射线具有良好的响应和成像能力。2017年，Shrestha等采用机械烧结的方法制备出了MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶饼块，组装出的Ag/ZnO/PCBM/MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/PEDOT∶PSS/ITO/Glass结构的X射线探测器在0.2 V·μm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的偏压条件下，获得了2 527 μC·Gy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "的灵敏度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；同年，华中科技大学唐江团队制备出Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "单晶，并组装了Au/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "/Au结构的X射线探测器，获得59.7 nGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的探测极限，率先实现了非铅钙钛矿X射线探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Liu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "设计了一种FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "/MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "/ Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "三种阳离子混合的钙钛矿单晶FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "‐PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2.55 " } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "0.45" } ] }, { "name": "text", "data": "，并组装出非对称结构的X射线探测器。在40 keV强度的X射线辐照下，表现出（3.5±0.2）×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " μC· Gy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "的超高灵敏度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在成像方面，图像传感器通常由光电探测器阵列组成，每个光电探测器作为图像传感器的一个像素" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，目前几乎所有钙钛矿探测器均基于电流信号的读出转化为图像的灰度而实现，结合" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "Y" } ] }, { "name": "text", "data": "双轴移动平台，一个光电探测器也可以通过在" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "轴和" }, { "name": "italic", "data": [ { "name": "text", "data": "Y" } ] }, { "name": "text", "data": "轴上移动，在二维光学图像的不同位置依次收集光信号，从而实现图像传感，这就是单像素成像" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } } ], "rid": [ "R49", "R50" ], "text": "49-50", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。单像素钙钛矿探测器通过沿着" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "Y" } ] }, { "name": "text", "data": "方向移动，获得二维成像能力，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）所示。由于图像传感器的大小会受到" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "Y" } ] }, { "name": "text", "data": "双轴移动平台限制，在商业应用中更常见的是线性探测器阵列和平板探测阵列。由单个光电探测器排成一列组成的线性探测器阵列沿着一个方向扫描完成成像，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示；平板探测阵列则是将光电探测器集成到特定的集成电路上，无需单个光电探测器移动，且成像面积更大，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "三种不同的X射线成像过程：（a）单像素扫描，（b）线性探测器阵列（LDA）扫描，（c）2D探测器阵列扫描" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Scheme of three different X-ray imaging processes： （a）single pixel scanning， （b）linear detector array（LDA） scanning， （c）2D detector arrays scanning" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862631&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862641&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862636&type=", "width": "163.00000000", "height": "42.25682068", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2019年，Yang等通过等静压法制备出了面积为20 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "晶圆，并通过原位异质外延生长BiOBr以抑制钙钛矿材料的离子迁移现象，构建的Au/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "/Au探测器,在0.5 V·μm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的偏压下灵敏度可达250 μC·Gy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，高出α-Se探测器12倍，空间分辨率达4.9 lp·mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "@MTF=20%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿晶体中，离子通过肖特基缺陷、弗伦科尔缺陷等缺陷（如卤素空位）迁移。在多晶厚膜中，除了点缺陷外，由于晶界和晶体表面的结构相对开放，离子迁移激活能比在晶体中更低，晶界成为离子迁移的主要通道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该工作通过原位异质外延生长钝化晶界，抑制离子迁移，制备的探测器信号漂移比以往所有钙钛矿X射线探测器都要低3个数量级。等静压法制备出的大面积Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "晶圆为大面积X射线探测成像提供了可能。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示，该工作进一步模拟了晶片基探测器的成像应用，通过制作平面阵列电极和线性阵列电极，将这些像素直接连接到源表上，实现了基于电流信号读出的平面成像。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）等静压过程示意图，先将Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "粉末压模成饼状，然后在液压机200 MPa的压力下压实，最后通过退火提高结晶度并促进晶粒生长；（b）成像过程示意图以及“HUST”符号的X射线图像（上）和光学图像（下）；（c）由线性检测器阵列获得的心形标志的光学图像（左）和X射线图像（右），成像剂量率为138 μGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，扫描模式和线性探测器阵列见底部" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a）Schematic illustration of the isostatic-pressing process， while Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " powders were firstly modeled into a pie shape and then subsequently subjected to a pressure of 200 MPa through a hydraulic press， and the additional annealing process could enhance the crystallinity and grain growth. （b）The Schematic illustration of the imaging process， and the X-ray image（top） and the optical image（bottom） of ‘HUST’ symbol. （c）Optical image and X-ray image of the heart-shaped logo obtained by the linear detector array， the dose rate for imaging is 138 μGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "， and the scanning mode， as well as the linear detector array is shown at the bottom" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862646&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862655&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862652&type=", "width": "160.40274048", "height": "105.87377930", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2020年，Zhao等利用柔性多孔尼龙膜支撑制备出了活性面积达400 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、并且具备一定柔性的钙钛矿厚膜材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）、（b）所示，灵敏度可达（8 696±228） μC·mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "。该工作采用了一种全新的方式制备大面积钙钛矿厚膜：通过真空泵使饱和钙钛矿溶液渗透进多孔尼龙膜，然后热层压形成相互连接的钙钛矿晶体。由于尼龙膜在各个方向都具有通道，溶液在膜内可以自由渗透，制备出的厚膜表面光滑。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）（MAPb（I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.9" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）厚膜图片；（b）400 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "大面积柔性尼龙膜照片，左侧未负载，右侧负载了钙钛矿；（c）平板状态（左）和弯曲状态（右）下，线性探测器阵列对X射线的电流响应；（d）内壁上有一个“+”形洞的管道图像；（e）从管道内部（60 keV X射线）和外部（100 keV X射线）成像孔的示意图（上）和实验结果（下）。所有图像均为无噪声基底拍摄。比例尺为4 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "（a）Schematic of a PFM. （b）Photographs of a large-area（400 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "） flexible nylon membrane before（left） and after（right） loading perovskites. （c）X-ray current response of pixels from a linear detector array when the device is flat（left） and bent（right）. （d）Photograph of a pipe with a ‘+’-shaped hole in the wall， wrapped with black paper. （e）Schematic（top） and experimental results（bottom） of imaging the hole from inside（under X-rays of 60 keV） and outside（under X-rays of 100 keV） of the pipe. All images were taken without noise subtraction. Scale bars， 4 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862660&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862668&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862664&type=", "width": "133.68920898", "height": "99.22933960", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了测量这种钙钛矿填充膜的性能，组装了Cr/苯丙胺（BCP）/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "/MAPb（I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.9" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PFM（240 μm）/Cr（15 nm）结构的探测器进行评估。在0.05 V·μm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的场强下，240 μm厚的钙钛矿填充膜器件灵敏度达2 204 μC·mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，这与1.5 mm厚的MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶器件在同一场强下的灵敏度相当（2 353 μC·mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "），暗电流为98.3 nA·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于多孔尼龙膜具有良好的柔韧性和机械稳定性，钙钛矿填充膜可以弯曲到曲率2 mm，制备的器件呈现出优越的弯曲型X射线探测成像性能，可以用于探测管道内部的损伤。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）~（e）所示，刚性平板X射线探测器由于只能放置在管道外部，对内部的探伤存在严重的光晕问题；而柔性X射线探测器件可以通过弯曲到X射线源附近被均匀辐照，从而获得了清晰的成像，弯曲后响应的电流信号更加均匀。因此，在相同的X射线强度下，对弯曲场景的X射线探测柔性器件可以获得更好的分辨率和对比度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "大面积钙钛矿晶片的制备（20 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）为大面积钙钛矿器件的制备提供了思路；同时，构建器件时，为模拟应用，以电极像素化的方式制备了线阵X射线探测器，较单像素探测器而言更具有应用价值。面积可达400 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的柔性膜在一些狭窄管道、小角度缝隙处等，在保证灵敏度和成像清晰度的同时，柔型器件比普通平板器件更能发挥作用。钙钛矿材料的大面积制备和柔性器件的思路，为基于钙钛矿的X射线面阵探测提供了基础。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "然而，在单像素成像中，所有的光信号都是通过单个光电探测器的运动逐个收集的，所以成像时间非常长，对于高分辨率成像就更加缓慢" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；除此之外，单像素探测器不能用于动态成像，所以不适用于图像传感的实际应用，通常用于构建简单的X射线探测器件测试材料性能。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　TFT集成的面阵探测器" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "多像素成像相较于单点像素移动成像更具有实际意义，这就需要将大面积的钙钛矿探测器与TFT或CMOS阵列集成，然而由于集成的难度，目前少有研究。多像素成像与单像素成像最重要的区别在于，多像素成像将半导体材料集成到薄膜晶体管阵列（TFT）中，每一个阵列就是一个光电传感器。在TFT集成的面阵探测器中，半导体材料与TFT读出电路相结合，半导体顶部覆盖正面的公共电极，底部由TFT提供像素化电极。半导体在成像过程中产生的电信号存储在读出阵列的存储电容中，读出阵列在后端读出电路的控制下，对存储电容中的电信号逐行读出，从而实现成像" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于成像面板的构建，钙钛矿材料的低温制备特性使其与TFT或CMOS读出电路耐受温度兼容。而要实现面阵集成，需要大面积活性区域 （>10 cm×10 cm）；同时，为了保证对X射线的充分吸收，还需要材料具有一定的厚度。由于单晶的尺寸有限，大面积多晶钙钛矿厚膜可以用现有的沉积技术直接沉积至读出电路中，成为平板成像中十分有吸引力的选择。虽然基于钙钛矿厚膜的面阵探测器是近几年才逐渐开始发展的一个领域，但是它表现出来的性能非常值得期待。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "三星公司于2017年报道了国际上首个以钙钛矿厚膜材料作为光导层的大面积平板X射线面阵探测器。多晶MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料刮涂在10 cm×10 cm的PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "衬底上形成厚度为830 μm的厚膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然后与TFT背板集成。在此之前，刮涂法已经广泛应用于太阳能电池中钙钛矿薄膜的制备" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这一工作证实了钙钛矿材料在X射线面阵探测器上应用的可行性，引起了业内的广泛关注。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）所示为三星公司构建的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶厚膜X射线探测器的器件结构。PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "通过旋转涂覆的方法制备至TFT背板上，" }, { "name": "xref", "data": { "text": "图 4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图 4" } ] } }, { "name": "text", "data": "（b）显示了单个像素的厚膜晶体管图像。该探测器在100 kV的球管电压下，灵敏度可达11 000 μC·Gy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，实现了集成电路对物体的读出成像（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）），其成像空间分辨率为3.1 lp·mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1 " } ] }, { "name": "text", "data": "@MTF=20%。尽管基于钙钛矿的面阵探测器首次获得了突破，但其空间分辨率仍低于非晶硒（250 μm厚）探测器的7.1 lp·mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "@MTF=20%。导致分辨率降低最可能的原因是MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶粒大小位于20~100 μm 之间，比TFT像素尺寸大的晶粒会重叠相邻像素，导致电荷串扰，使分辨率下降。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）刮涂法制备的数字X射线探测器结构；（b）左图显示了PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "旋转涂覆在a-Si∶HTFT背板上的光学图像，插图显示了TFT的单像素结构（比例尺30 μm），其中收集电极（白色轮廓）通过通孔（圆形垫）连接到TFT的漏极触点，右图显示了刮涂在PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚膜照片；（c）MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚膜探测器获得的手幻影X射线图像（使用100 kVp和5 mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "曝光5 ms，剂量为25 μGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "，偏置电压为50 V；（d）在100 kVp条件下测量的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚膜探测器的电荷采集和灵敏度特性，插图显示了像素化（蓝色符号）和二极管（红色符号）检测器中的" }, { "name": "italic", "data": [ { "name": "text", "data": "W" }, { "name": "sub", "data": [ { "name": "text", "data": "±" } ] } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）Illustration of an all-solution-processed digital X-ray detector. （b）The left panel shows an optical image of spin-cast PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " on an a-Si∶H TFT backplane. The inset shows a single-pixel structure of TFT（scale bar 30 μm） in which the collection electrode（white outline） is connected to the drain contact of the TFT through a via（circular pad）. The right panel shows a photograph of printed MPCs on the PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ". （c）A hand phantom X-ray image obtained from an MPC detector（using 100 kVp and 5 mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " for 5 ms exposure， resulting in a dose of 25 μGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": " and a bias voltage of 50 V） . （d）Charge collection and sensitivity characteristics of the MPC detector measured at 100 kVp. The inset shows " }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "±" } ] }, { "name": "text", "data": " in the pixellated（blue symbols） and diode（red symbols） detectors" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862673&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862681&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862676&type=", "width": "158.83465576", "height": "99.39868164", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "首次与TFT集成，其器件暗电流较大，高出非晶硒探测器两个数量级。这可能是由于厚膜内部溶液的蒸发形成了大量的孔隙，同时不均匀的纵向结晶使得厚膜表面凹凸不平。这种多孔性降低了厚膜密度，导致膜内部产生较多缺陷，晶界也是离子迁移的主要通道之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而导致暗电流增加。这也正是目前急需解决的与TFT集成的X射线探测器钙钛矿光导层的另一个关键问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2021年，西门子公司通过“两步法”制备了MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿光导层，并组装了与TFT背板集成的X射线探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，结构如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）所示。“两步法”的制备过程包括：（1）利用机械烧结制备MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "光导层，将MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "粉末在室温下使用75.5 MPa压力静压30 min，形成分立稳定的晶片" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；（2）利用光刻技术，在TFT背板上增加了高10 μm的网栅，其宽度为10 µm，像素间距50 µm（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）），将MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶片填充进网栅而与TFT背板集成。这种光导层制备和集成分开进行的方法相较于直接把光导层打印到TFT背板上，具有独特的优势：在与TFT集成之前可以通过烧结控制晶片的质量，而X射线吸收的均匀性则可以通过均匀等高的网栅控制。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）X射线探测器组成的剖解视图；（b）网格结构的扫描电镜图像，鸟瞰图显示了网格的规则形状，结构宽度为10 µm，像素间距50 µm；（c）计算RQA5谱中X射线响应的灵敏度（" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "），剂量为213 µGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "；（d）两种不同剂量（蓝色和绿色）的MTF曲线和基于互补金属氧化物半导体技术的商业间接转换探测器的MTF曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a）Exploded view of the different elements of the X-ray imager. （b）SEM image of the grid photoresist structure. The bird’s eye view shows the regular shape of the grid. The width of the structure is 10 µm. The pixel pitch is 50 µm. （c）Calculated sensitivity（" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "） of the X-ray responses in the RQA5 spectrum and a dose of 213 µGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ". （d）MTF curves of the pixelated MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " imager for two different doses（blue and green） and MTF of commercial indirect conversion detector based on the complementary metal-oxide-semiconductor technology（red）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862685&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862696&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862691&type=", "width": "133.96508789", "height": "107.23181152", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "像素化的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": " " } ] }, { "name": "text", "data": " X射线探测器表现出6 lp·mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的高分辨率（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）），明显高于红色线条代表的间接X射线探测器；" }, { "name": "italic", "data": [ { "name": "text", "data": "μτ" } ] }, { "name": "text", "data": "值为4×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，在0.17 V·µm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的电场下，实现了晶圆的最大灵敏度可达9 300 μC·Gy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d））。在0.03 V·μm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的外加电场下显示出0.22 nGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "每帧的超低检测限。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，不同的场景应用具有不同特点的X射线探测器，而这种结合了高分辨率和高灵敏度的探测器，可能实现在各种场景的普遍应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了解决钙钛矿厚膜内部孔洞及缺陷的问题，最近，华中科技大学唐江团队与上海奕瑞光电子科技股份有限公司联合攻关，通过软压辅助的低温溶液处理以及多功能粘结剂（TMTA）原位聚合制备的高质量MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚膜（如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）所示），最大面积可达28 cm×28 cm。同时，实现了我国第一个TFT集成的X射线平板面阵探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）钙钛矿厚膜制备方法比较，MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TMTA膜的横截面SEM图像；（b）软压（比例尺为100 µm）；（c）无压力（比例尺为300 µm）；（d）薄膜的偏压依赖性光电导率，应用Hecht方程拟合光的电导率数据" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a）Comparison of the fabrication method for perovskite thick films，cross-sectional SEM images of MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TMTA thick films. （b）With soft-pressing（the scale bar is 100 µm）. （c）Without pressing（the scale bar is 300 µm）. （d）Bias-dependent photoconductivity of the films. The Hecht equation was applied to fit the photoconductivity data" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862699&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862715&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862706&type=", "width": "160.64901733", "height": "123.33154297", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "常规方法制备的钙钛矿厚膜由于溶液蒸发而留下较多的孔隙，严重的离子迁移大大增加了复合损失和暗电流。该工作采取软压（2 MPa）的方式，既在TFT能承受的安全压力内，又能使晶粒重新排列。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（b）、（c）所示，经过软压过后的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚膜晶粒排布明显更加致密，致密厚膜比晶粒重排前的多孔膜更能抑制离子迁移、光生载流子捕获和复合，从而有利于载流子收集和X射线探测；同时，该工作还创造性地在钙钛矿溶液中加入TMTA单体，然后原位聚合有助于将钙钛矿晶粒紧密结合，不仅抑制孔洞形成，还钝化了晶界。利用聚合物作为粘结剂的优势显著，如" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "（d）所示，对于软压的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ TMTA厚膜，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "μτ" } ] }, { "name": "text", "data": "积从5.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "增加到6.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，甚至比纯MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "厚膜高出6.8倍。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "将MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TMTA厚膜与TFT像素电路集成，构成钙钛矿X射线平板探测器，结构图解如" }, { "name": "xref", "data": { "text": "图 7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图 7" } ] } }, { "name": "text", "data": "（a）所示，TFT基底尺寸为50 mm×62 mm，活性面积为38.5 mm×38.5 mm。像素大小为150 µm，像素化的ITO作为钙钛矿光电二极管的底电极，并与TFT源极连接，每个像素具有1.9 pF的存储电容（" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b））。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（c）~（e）显示了在X射线照射下的刃边成像和螺钉成像，螺钉的锯纹清晰可见，这表明MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TMTA厚膜钙钛矿X射线探测器的横向串扰很小，具有较大的实际应用潜力。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）钙钛矿平板X射线探测器结构图解；（b）从集成平面阵列探测器中获得的单像素横截面和操作图解；一些物体的照片和X射线图像：（c）空白，（d）金属片边缘，（e）钢钉，图中比例尺为0.5 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Monolithic integration and imaging of MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/TMTA thick film FPXI. （a）Schematic demonstration of a perovskite FPXI. （b）Cross-section and operating illustration of a single-pixel in perovskite FPXI. Photo images and X-ray images of blank（c）， sheet metal edge（d）， and steel nails（e） obtained from our integrated flat array detector. The scale bars in （c）， （d） and （e） are 0.5 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862720&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862728&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862724&type=", "width": "157.05664063", "height": "88.86578369", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "三星公司率先制备出与TFT集成的X射线探测器，但其器件暗电流无法降低到应用水平，根本原因是由于厚膜内部缺陷较多。针对这一问题，华中科技大学唐江团队采用软压辅助的方法，并在聚合过程中加入了TMTA，促进MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶粒的聚合和界面钝化，减少孔洞和缺陷的效果非常显著。尽管目前已报道的与TFT集成的X射线探测器的研究仍然是少数，但发现和解决问题的目标性和方向都十分清晰并进展迅速，基于钙钛矿的X射线面阵探测必将是一个极具潜力的领域。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为更全面地显示近年来钙钛矿材料家族在X射线探测器中的发展，特对部分代表材料构建的探测器性能进行了总结。" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "总结了钙钛矿X射线探测器的关键参数如" }, { "name": "italic", "data": [ { "name": "text", "data": "μτ" } ] }, { "name": "text", "data": "积、灵敏度、检测限等。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同材料构建的直接型X射线探测器参数对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Parameter comparison of direct X-ray detectors constructed with different materials" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": 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{ "title": [ { "name": "text", "data": "4　总结与展望" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "尽管钙钛矿在X射线探测领域有着巨大的优势，近年来在直接型X射线成像上取得了一定进展，但多基于单像素探测器的多次移动成像。与芯片集成构建面阵探测器、利用后端读出电路成像目前只有三篇报道，分别来自三星公司、西门子公司、华中科技大学/奕瑞科技联合攻关，仍存在空间分辨率低的问题。要实现面阵探测器的高空间分辨率、高灵敏度和低成像剂量，需要进一步从材料、器件结构、芯片设计、探测原理等方面进行优化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（1）从材料方面：减小钙钛矿层内部的离子迁移" } ] }, { "name": "p", "data": [ { "name": "text", "data": "X射线激发下，钙钛矿中的光生载流子（主要是电子）最终到达芯片中的存储电容，产生感应电压，从而抵消一部分实际偏置电压，影响动态响应范围和成像分辨率。这也是X射线面阵探测器中的共性问题，如非晶硒X射线探测器通过加高电压以确保与施加的偏压相比，电容上的电压降可以忽略，以保证成像质量。随着偏置电压的增加，暗电流也会增加，为了使暗电流不超出芯片电容的承载能力，需要增加钙钛矿材料内部的离子迁移势垒，以抑制离子迁移。为了抑制离子迁移，需要对材料质量进行优化，抑制离子迁移的根本是要增加离子迁移势垒，在钙钛矿单晶中一般通过钝化卤素空位等缺陷实现。例如Yang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "多晶晶片上引入BiOBr作为异质外延钝化层，BiOBr可以提供Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "抑制Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "空位的产生，减少离子迁移通道；对于钙钛矿多晶厚膜，可通过增加多晶膜致密度以较少孔洞、钝化晶界、引入低暗电流的准二维结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、适当添加聚合物阻挡层等方式实现。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（2）从器件结构方面：构建PIN型器件结构或肖特基电极接触" } ] }, { "name": "p", "data": [ { "name": "text", "data": "选择能级匹配的功能层或电极结构，可以使得器件在偏置电压下的注入暗电流受到能级势垒的阻挡而使有源区产生的光生载流子可以被电极有效地抽取与收集。例如引入重掺杂（" }, { "name": "text", "data": ">" }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "）的空穴传输层（NiO、CuI等）和电子传输层（ZnO、SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等），构建PIN型全耗尽器件，可以使其工作在所需的高偏置电压下增加载流子的抽取，同时降低暗电流并抑制离子迁移。另一方面，对于钙钛矿单晶可以构筑单边或双边肖特基电极接触，例如采用低功函的Ga电极阻挡注入电子等。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（3）从芯片设计方面：兼顾电容大小和像素大小" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了配合高外加偏压导致的大暗电流，芯片电容需要向更大的趋势发展，但以目前的工艺，大电容会带来像素的增大，当像素大到一定程度时，成像空间分辨率完全由像素大小决定，而与探测材料或原理无关。因此为了实现更高的灵敏度和空间分辨率，芯片电容和像素尺寸的设计需要兼顾，以获得最佳方案。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（4）从原理方面：由电荷积分型向光子计数型发展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于室温下工作的半导体X射线探测器，一般采用电荷积分和光子计数两种信号方式。电荷积分模式对探测器在一定时间内沉积的总能量进行积分，不量化入射光子的数量和能量，而光子计数模式可以区分入射的单个X射线光子的能量。由于成像对比度的显著增强和辐射剂量的减少，光子计数X射线探测成像是未来医学和无损检测领域的重要发展方向。由于电荷捕获和堆积，高通量光子（" }, { "name": "text", "data": ">" }, { "name": "text", "data": "100万photons/（mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）计数受到读出电子学的限制，目前只有CdTe和CdZnTe材料实现了光子计数型X射线探测器。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿材料的灵敏度高，尤其是全无机CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿可与传统的商用半导体CdZnTe材料媲美，在化学稳定性和器件稳定性方面也具有很大的优势。要实现基于钙钛矿的单光子计数型X射线探测，需要具有光谱响应的钙钛矿单晶辐射探测器。目前许多载流子注入型器件表现出光增益，并伴随着较大的暗电流，无法维持高外加电场，因而无法实现光子计数。高质量的钙钛矿单晶和优化的器件结构，有望发展基于光子计数型的X射线面阵探测器。本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220119." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220119." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHOU S A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BRAHME A" }, { "name": "text", "data": ". 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