Effect of Sputtering Temperature on Microstructural and Optical Properties of Gallium Oxide Deposited by High-vacuum Magnetron Sputtering Enhanced Publication

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"杨为家（1980-），男，广西桂平人，博士，副教授，硕士生导师，2016年于华南理工大学获得博士学位，主要从事ⅢⅤ族、氧化物薄膜材料与器件的研究。E‐mail：yangweijia5377@126. com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35864992&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865002&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35864997&type=", "width": "24.89199829", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "杨为家" }, { "name": "text", "data": "（1980-），男，广西桂平人，博士，副教授，硕士生导师，2016年于华南理工大学获得博士学位，主要从事ⅢⅤ族、氧化物薄膜材料与器件的研究。E‐mail：" }, { "name": "text", "data": "yangweijia5377@126. com" } ] ] } ], "email": "yangweijia5377@126. com", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "五邑大学 应用物理与材料学院， 广东 江门　529020", "data": [ { "name": "text", "data": "五邑大学 应用物理与材料学院， 广东 江门　529020" } ] }, { "lang": "en", "label": "1", "text": "School of Applied 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"data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "微观结构及光学性能影响的研究，利用 X 射线衍射、扫描电子显微镜、荧光光谱仪等测试手段对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体结构、表面形貌及光学性能进行表征分析。实验结果表明，在高纯Ar气环境下，所沉积的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "形貌差异与不同溅射温度下Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "生长机理有关，当溅射温度达到300 ℃时，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发生热分解，形成金属Ga团簇；当溅射温度达到400 ℃时，金属Ga团簇作为催化剂触发Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的自催化生长。光致发光（PL）光谱中，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品在300~700 nm波长范围内显示出4个位于紫光、蓝光、绿光区域的发射峰，在溅射温度为400 ℃下形成的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线发射峰显著增强，并且发生轻微的蓝移，纳米结构中较大的比表面积以及量子尺寸效应对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的荧光发射（PL）性能具有重要影响。拉曼光谱（Raman）显示，随着溅射温度升高，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体质量有所提高；在溅射温度为400 ℃下形成的纳米线出现新的拉曼振动模式，并且发生18 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的蓝移。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Gallium oxide（β-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "） was deposited on silicon （111） substrate by RF magnetron sputtering， and the effect of substrate temperature on the microstructure and optical property of the Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " was studied. The crystal structure， surface morphology and optical propery of as-deposited Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " were characterized by X-ray diffraction， scanning electron microscopy， fluorescence spectrometer， " }, { "name": "italic", "data": [ { "name": "text", "data": "etc" } ] }, { "name": "text", "data": ". The experimental results show that in a high-purity Ar atmosphere， the surface morphology of as-deposited Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " is related to its growth mechanism at different sputtering temperatures. When the sputtering temperature is 300 ℃， Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " undergoes thermal decomposition to form clusters of metal Ga； when the sputtering temperature reaches 400 ℃， the metal Ga clusters act as the catalyst to trigger the self-catalytic growth of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires. According to the photoluminescence（PL） spectra， the Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " samples show four emission peaks located in the ultraviolet， blue and green light regions in the spectral range of 300 nm to 700 nm. The emission peaks of the Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires obtained at the sputtering temperature of 400 ℃ are significantly enhanced and exhibit slight blueshifts. It is revealed that the larger specific surface area and the quantum size effects of nanowires have important effects on the PL performance of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ". Raman spectroscopy（Raman） characterizations suggest that the crystalline quality of as-grown Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " is improved with the increasing sputtering temperature. New Raman vibration modes appear in the spectra detected from the Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanowires grown at 400 ℃， and the Raman peak shows a blueshift of 18 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "射频磁控溅射" } ], [ { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ], [ { "name": "text", "data": "结构性能" } ], [ { "name": "text", "data": "光学性能" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "RF magnetron sputtering" } ], [ { "name": "text", "data": "gallium oxide" } ], [ { "name": "text", "data": "structural properties" } ], [ { "name": "text", "data": "optical properties" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "氧化镓（Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）作为超宽禁带半导体代表之一，禁带宽度达到了4.9 eV，具有优良的电学性能、稳定的物理和化学特性，并且在高温环境下具有优异的稳定性，对紫外光能够准确响应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。基于以上特点，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 材料在透明导电薄膜、气体探测器、大功率半导体器件和紫外光电探测器等方面" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "具有较大的应用潜力，成为了当前超宽禁带半导体材料研究的热点之一。目前制备Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料的主要方法包括金属有机物化学气相沉积法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、分子束外延法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、脉冲激光沉积法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、磁控溅射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。相比较于前三种方法而言，磁控溅射技术具有操作简单、沉积速度快、成本低等优点，是目前常用的镀膜方法之一。Soheil" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Vu" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Meng" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Wang" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等对沉积功率、工作压力、氧分压、退火处理进行优化，提高了Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的晶体质量。Kumar等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用射频磁控溅射研究不同溅射温度（25~800 ℃）对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜结构和光学性质的影响，发现Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜在较低的温度下生长表现为非晶态，而在溅射温度高于500 ℃下获得的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜主要表现为纳米晶形态。较低温度下沉积的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜中O含量较高，而在300~800 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜中Ga与O趋近化学计量比。此外，薄膜光学带隙随着溅射温度的升高而增大。Alhalaili等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在高温（~1 000 ℃）及少量O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "存在的气氛中，以Ag薄膜作为催化剂，沉积Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜与纳米线，并对其结构、形态和成分进行表征，发现Ag作为Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "生长的催化剂材料，通过控制生长温度可以获得纳米晶薄膜或者纳米线。Park等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在高真空缺氧的环境中利用射频磁控溅射技术在蓝宝石 （0001） 衬底上生长Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "。经实验发现，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "在溅射温度高于450 ℃的条件下，随着薄膜厚度的增加，薄膜表面逐渐形成纳米线束。此外，还发现在初级纳米线的侧面发生二次生长，形成分支纳米线结构。Choi等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在溅射温度为550 ℃的环境下，通过调节溅射时间在玻璃基板上制备Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品，发现随着薄膜厚度增加， Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜表面逐渐形成尖峰和纳米线束形貌。现有研究表明，通过调控溅射温度以及沉积气氛可以实现薄膜向纳米线的转变，但是目前关于高真空磁控溅射温度对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "微观结构及光学性能的影响规律尚未有系统研究。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本研究采用射频磁控溅射技术，以Si（111）为衬底，在高纯Ar气环境下以不同的溅射温度生长Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品，利用X 射线衍射与扫描电子显微镜研究了样品的晶体结构以及表面形貌；利用荧光光谱仪与拉曼光谱仪对光学性能进行表征分析，深入研究了在无氧气氛中溅射温度对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料结构及光学性能的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "使用射频（RF）磁控溅射（Kurt J Lesker Labline Sputter）在高真空无氧气氛下进行Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品制备，衬底材料为4 英寸的（111）面的Si片，靶材为高纯度（质量分数99.99% ）的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "陶瓷靶材，溅射时的工作气体为高纯氩气（体积分数99.99%），高纯氩气被电离产生氩离子轰击靶材产生辉光。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "首先进行衬底清洗，用含有H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "SO" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "∶H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "∶H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O （3∶1∶1） 和5% HF的化学溶剂清洗硅基底，以去除表面污染物和氧化硅。然后将清洗干净的衬底放入本底真空度为1.33×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " Pa（1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": " torr）的高真空沉积腔室内，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的射频功率为100 W，沉积气体为高纯氩气且沉积气压固定在0.8 Pa（6.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3 " } ] }, { "name": "text", "data": "torr），分别在溅射温度为室温及200，300，400 ℃条件下进行Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "生长。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "采用场发射扫描电子显微镜 （FESEM, Hitachi SU8020）研究了不同溅射温度下Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的表面形貌；采用掠入射X射线衍射仪（德国Bruker D8 ADVANCE），使用入射角为2°的薄膜光路分析所得样品的晶体结构；利用稳态/瞬态荧光光谱仪 （Edinburgh FLS980） 对PL性能进行表征；通过共焦拉曼光谱仪（HORIBA）对样品的晶体质量以及内部应力进行分析。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "是在不同溅射温度下得到的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品表面形貌与断面形貌SEM图。如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）、（b）所示，溅射温度为室温和200 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品具有相近的表面形态，样品表面存在大量岛状晶粒。但是，在200 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜晶粒变大，这是由于溅射温度升高，被溅射的粒子到达衬底后获得更大的迁移能量，从而促进了晶粒生长。然而，随着溅射温度提高到300 ℃，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜表面出现较大尺寸的圆形颗粒，这主要是由于在高温环境下，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发生热分解并受热动力学过程影响，最终分离而形成金属Ga团簇" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当溅射温度进一步升高到400 ℃，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（d）所示，样品表面出现纳米线形貌，Si（111）衬底完全被Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线覆盖。综上，在高纯Ar气环境下，样品的形貌差异与不同溅射温度下Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "生长机理有关。当溅射温度达到临界温度，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "在高温缺氧环境下发生热分解，分离成金属Ga团簇，进而发生自催化形成纳米结构。为了验证400 ℃是实现薄膜向纳米线的转变温度，故此继续升高沉积温度达到500 ℃，发现在500 ℃下样品表面为纳米线，如图 " }, { "name": "xref", "data": { "text": "1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "（d-" }, { "name": "xref", "data": { "text": "1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "）插图所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "不同溅射温度Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的表面形貌与断面形貌SEM图。 （a）室温；（b）200 ℃；（c）300 ℃；（d）400 ℃。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "SEM images for the surface morphology and section shape of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " samples grown at different sputtering temperatures. （a）Room temperature. （b）200 °C. （c）300 °C. （d）400 °C." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865007&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865017&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865012&type=", "width": "162.79998779", "height": "61.08120728", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "为不同溅射温度下Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的XRD 2" }, { "name": "italic", "data": [ { "name": "text", "data": "θ⁃ω" } ] }, { "name": "text", "data": "扫描图线。在2" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "=28.44°附近的衍射峰对应于Si衬底的（111）晶面，由于采用掠入射测试法，所探测到的Si（111）衍射峰相对较弱。与Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的PDF#41-1103和PDF#43-1013卡片相比对，从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "可以观察到，在室温下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜存在（311）、 （-203）、（119） 取向的衍射峰。在200 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，出现对应于（-710）晶面的新衍射峰，并且其表现出良好的择优取向性。在300 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "存在（-203）、（003）、（020）、（-710）取向的衍射峰，且沿（-710）晶面择优生长，并且其 （-701）衍射峰强度高于200 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "衍射强度，这说明提高溅射温度有利于使粒子获得更大的迁移能量，从而表现出更强的择优生长趋势。在溅射温度为400 ℃时， XRD图谱中出现了对应于晶面（-110）、（-202）、（111）、（-313）、（-221）的多个新衍射峰，这可能是因为在向纳米结构转变生长的过程中，粒子趋于多种晶格位置迁移，导致纳米结构的结晶面增多，取向性降低。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同溅射温度下制备的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的XRD谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "XRD spectra of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " samples prepared at different sputtering temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865025&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865037&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865032&type=", "width": "64.52270508", "height": "51.48178101", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "是紫外光激发下获得的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品室温荧光发射（PL）光谱，其插图为荧光激发（PLE）光谱。从PLE光谱中可以看出在280 nm时具有最强的激发效果，故选择280 nm为紫外激发获得Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的PL光谱。从PL光谱中可以看到，发光谱中有一个很宽的紫外到蓝光波段的不对称发光区域，在室温及200，300，400 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发射峰分别位于335，333，333，330 nm，这可能是由于各种缺陷引起的多重发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。溅射温度对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品结构缺陷有显著影响。在200~400 ℃下生长Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的PL强度明显高于在室温下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，这可能是由于室温下生长Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "存在高密度缺陷，提高溅射温度有利于增强Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的结晶性能，从而降低其缺陷密度，增强PL性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，在300 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的PL强度略低于200 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 样品的PL强度，该样品薄膜表面出现的较大圆形颗粒使入射激光发生漫反射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而削弱了样品的PL强度。随着溅射温度进一步升高到400 ℃，Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的PL强度显著增强了一倍，这主要归功于纳米结构具有更大的比表面积" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，由于纳米结构中存在量子尺寸效应，其PL峰位发生了轻微蓝移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R22", "R23" ], "text": "22-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "280 nm激发的不同溅射温度的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的室温PL光谱，插图为PLE光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Room-temperature PL spectra of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " samples with different sputtering temperatures excited at 280 nm， its illustration is a PLE spectrum." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865041&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865050&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865046&type=", "width": "73.28201294", "height": "61.26329041", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用高斯拟合进一步分析Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的光致发光光谱，结果如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。PL光谱可以分为紫光、蓝光、绿光区域的4个分峰。紫外区域的发光峰Ⅰ和峰Ⅱ与束缚激子的复合有关，由施主能级上的一个电子和受主能级上的一个空穴形成的一对束缚激子，两者复合从而发射出一个光子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。溅射温度升高后，更有利于形成微纳结构，由于纳米结构具有量子尺寸效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而使得施主和受主能级上更多的电子和空穴被捕获到导带和价带上，被捕获的电子与空穴在更高能级上复合，导致紫外发射峰强度增强。一般情况下，晶体质量的提高会使本征发射增强。为了进一步分析Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "紫外区域发光峰，对其紫外区域发光峰峰面积进行了统计分析，发现在室温下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "峰Ⅰ和峰Ⅱ的总面积达到9.53×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6 " } ] }, { "name": "text", "data": "a.u.，200~400 ℃下的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "紫外区域峰Ⅰ和峰Ⅱ的总面积分别达到11.04×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "，10.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "，16.86×10" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": " a.u.，相比于室温下Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "紫外区域峰面积分别提高了15.8%、8.0%、76.9%。室温溅射Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "样品的光谱中峰Ⅰ和峰Ⅱ位于328.95 nm（3.77 eV）和355.43 nm（3.49 eV），其他温度下溅射Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "样品与室温相比而言，峰Ⅰ和峰Ⅱ发生轻微蓝移。自捕获激子重组引起的PL峰的位移通常受晶粒尺寸的影响。在400 ℃下，峰Ⅰ和峰Ⅱ分别位于325.90 nm （3.80 eV）和348.53 nm（3.56 eV），随着晶粒尺寸的减小，量子约束效应就会增强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。蓝色发光峰Ⅲ可以归因于施主上的捕获电子与受主上的捕获空穴之间的重组。施主可由O空位和Ga间隙形成，受主由Ga空位和Ga-O空位对组成" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在400 ℃下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的蓝色发光峰（1.87×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7 " } ] }, { "name": "text", "data": "a.u.）相比于其他温度下生长的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜蓝色发光峰提高了一个数量级，这主要是由于纳米结构在高温环境中受动力学影响，其内部可能存在大量的O空位" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据Liang等的研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现，蓝色发光峰与O空位缺陷有关，对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜及Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线的PL光谱开展研究，发现在高温下生长Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线，大量的O空位更容易被生产出来。绿色发光峰Ⅳ主要是由于施主中的一个电子被受主上的一个空穴捕获，形成一个被捕获的激子。有研究表明，绿色发光峰可能是由于O间隙缺陷引起" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R29", "R30" ], "text": "29-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "，在400 ℃下绿色发光峰（相对于蓝色发光峰）减弱，这与O间隙的减少和O空位的增加有关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } } ], "rid": [ "R31", "R32", "R33" ], "text": "31-33", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在低温富氧环境中，绿色发光增加；而在高真空高温缺氧时，蓝色发光增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。关于Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的绿色发光机理有待进一步研究和阐明。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "280 nm激发的不同溅射温度的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品的室温PL光谱高斯拟合" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Room-temperature PL spectroscopic Gaussian fitting plot of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " samples with different sputtering temperatures excited at 280 nm" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865054&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865063&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865059&type=", "width": "157.91662598", "height": "88.61692810", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "为Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料在室温环境中利用488 nm波长激发所得到的Raman光谱。在不同的波数位置观察到Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "振动模式分别位于 197.2，300.31，434.74，520，619.44，690.4，708.41 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，均为 Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 典型的拉曼振动模式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } } ], "rid": [ "R34", "R35" ], "text": "34-35", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中，位于520 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "处的峰与生长过程中使用的Si衬底的横光（TO）相匹配" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "一般表现出15种拉曼模式和12种红外模式，可划分为三种模式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：低频模（200 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "以下）、中频模（300~500 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）、高频模（500~700 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）。低频模（197.2 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）与氧化镓四面体/八面体链的释放和平移有关，中频模（300.31，434.74 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）是由于GaO" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "六面体的变形导致，而位于高频模（520，619.44，690.4，708.41 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）的峰主要由GaO" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "四面体的拉伸和弯曲产生。根据" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "，在室温及200，300 ℃下生长得到的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "拉曼振动模式较少，且拉曼峰较宽，这是由材料中的无序性导致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当溅射温度为400 ℃时，薄膜转化为纳米结构，出现了位于434.74 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和619.44 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的新拉曼振动模式，并且Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构的拉曼峰相比于Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的拉曼峰发生了18 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的蓝移。低维材料中声子频率的蓝移通常归因于尺寸限制效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，由于纳米结构中存在较大的比表面积，故存在不可忽略的内部应变，从而发生蓝移。由于纳米线不同生长方向导致不同的表面重建与变化，从而具有不同大小与方向的内部应变，因此造成不同拉曼峰的偏移不同。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同溅射温度下Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "样品在室温环境中的Raman光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Room-temperature Raman spectra of Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " samples with different sputtering temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865068&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865076&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865072&type=", "width": "74.48602295", "height": "63.85180664", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文利用高真空射频磁控溅射技术沉积Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，并研究了溅射温度对Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "微观结构与光学性能的影响。得到以下结论：（1）Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜受高温作用发生热分解，形成金属Ga团簇，进而诱导Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线自催化生长。 （2）Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜在300~700 nm波长范围内显示出4个位于紫光、蓝光、绿光区域的发射峰。Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构由于具有较大的比表面积，其PL强度相比于薄膜显著增强，并且量子尺寸效应导致PL峰位发生轻微蓝移。 （3）低温下获得的Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜拉曼振动模式较少，且拉曼峰较宽，晶体缺陷密度高；而Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米结构生长方向诱导内部应变，位于高频模的拉曼峰相比于薄膜中的拉曼峰发生18 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的蓝移。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本研究在高真空无氧气氛中，通过调节衬底温度实现了薄膜向纳米线的转变，为后续高效、低成本制备Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米线提供了新的思路与解决办法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220131." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220131." } } ] }, { "name": "p", "data": [ { "name": "text", "data": "E‐mail： 1509518959@qq.com" } ] }, { "name": "p", "data": [ { "name": "text", "data": "E‐mail： wang_haiyan09@163.com" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KUMAR S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SINGH R" }, { "name": "text", "data": ". 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