Blue Perovskite Quantum Dot Co-doped with Rb⁺/Zn²⁺ and Its Light Emitting Diodes Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "共掺Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "蓝光钙钛矿量子点及其发光二极管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Blue Perovskite Quantum Dot Co-doped with Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "/Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " and Its Light Emitting Diodes" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "肖", "givenname": "毅", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIAO", "givenname": "Yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "肖毅（1997-），男，四川巴中人，硕士研究生, 2019年于华南理工大学获得学士学位，主要从事量子点发光显示器件的研究。Email: 1129659135@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879894&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879904&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879900&type=", "width": "24.99998474", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "肖毅" }, { "name": "text", "data": "（1997-），男，四川巴中人，硕士研究生, 2019年于华南理工大学获得学士学位，主要从事量子点发光显示器件的研究。Email: " }, { "name": "text", "data": "1129659135@qq.com" } ] ] } ], "email": "1129659135@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "丹阳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Dan-yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "罗", "givenname": "宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LUO", "givenname": "Yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "俊杰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jun-jie", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "森坤", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Sen-kun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "玉玲", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Yu-ling", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "彭", "givenname": "俊彪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "PENG", "givenname": "Jun-biao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： psjbpeng@scut.edu.cn", "data": [ { "name": "text", "data": "E-mail： psjbpeng@scut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "彭俊彪（1962-），男，山东宁津人，博 士，教授，博士生导师，1993 年于中国科学院长春物理研究所获得博士学位，主要从事发光显示器件与物理的研究。Email:psjbpeng@scut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879911&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879911&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879911&type=", "width": "25.00000000", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "彭俊彪" }, { "name": "text", "data": "（1962-），男，山东宁津人，博 士，教授，博士生导师，1993 年于中国科学院长春物理研究所获得博士学位，主要从事发光显示器件与物理的研究。Email:" }, { "name": "text", "data": "psjbpeng@scut.edu.cn" } ] ] } ], "email": "psjbpeng@scut.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "华南理工大学 发光材料与器件国家重点实验室， 广东 广州　510641", "data": [ { "name": "text", "data": "华南理工大学 发光材料与器件国家重点实验室， 广东 广州　510641" } ] }, { "lang": "en", "text": "State Key Laboratory of Luminescent Materials and Devices， South China University of Technology， Guangzhou 510641， China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescent Materials and Devices， South China University of Technology， Guangzhou 510641， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "共掺Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "得到了（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.93" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.07" } ] }, { "name": "text", "data": "）（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "）蓝光钙钛矿量子点。相比未掺杂的CsPb（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "）量子点，Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "与卤素离子（Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）形成更加稳定的钙钛矿八面体晶型，抑制了Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "空位缺陷的形成，提高了量子点的稳定性。掺杂后的量子点溶液光致发光效率从未掺杂的5%显著提高到52%，同时辐射复合也得到了显著增强。Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺使量子点的HOMO能级上移0.31 eV，降低了从空穴传输层（HTL）到发光层（EML）的注入势垒，有利于空穴注入。基于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺的蓝光钙钛矿量子点，设计了结构为ITO/PEDOT∶PSS/TFB/Pe⁃QDs/TPBi/LiF/Al的发光二极管器件，得到发光峰位于470 nm、半峰宽为19 nm的蓝光发射，最大外量子效率（EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "）达到3.55%。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.93" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.07" } ] }, { "name": "text", "data": "）（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "） blue light perovskite quantum dots were obtained by co-doping Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " and Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ". Compared with undoped CsPb（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "） quantum dots， Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "， Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " and halogen ions （Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "， Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "） form a more stable perovskite octahedral crystal， which inhibits the formation of Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": " vacancy defects， which improves the stability of quantum dots. The photoluminescence efficiency of the doped quantum dot solution was significantly improved from the undoped 5% to 52%， and the radiative recombination was also significantly enhanced. The co-doping of Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " and Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " shifts the HOMO level of the quantum dots up by 0.31 eV， which reduces the injection barrier from the hole transport layer （HTL） to the emissive layer （EML）， which is beneficial to hole injection. Based on blue perovskite quantum dots co-doped with Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " and Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "， a light-emitting device with the structure of ITO/PEDOT∶PSS/TFB/Pe-QDs/TPBi/LiF/Al was designed. For blue light emission at 19 nm， the maximum external quantum efficiency（EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "） reaches 3.55%." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "钙钛矿量子点" } ], [ { "name": "text", "data": "蓝光发射" } ], [ { "name": "text", "data": "Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂" } ], [ { "name": "text", "data": "晶格适配" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "perovskite quantum dots" } ], [ { "name": "text", "data": "blue emission" } ], [ { "name": "text", "data": "Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "， Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " doping" } ], [ { "name": "text", "data": "lattice adaptation" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "基于钙钛矿量子点的发光二极管（Pe-QLEDs）具有窄半峰宽（FWHM）、宽色域、低成本和制备简单等优点，是QLED体系中的研究热点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。全无机钙钛矿量子点（Pe-QDs）可以通过调节卤化物阴离子成分" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和粒径大小（即量子尺寸效应）的方式，实现精细可调和更窄的发射光谱，并通过合成方法（热注入法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、室温法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）、离子交换" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和表面配体修饰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等手段进一步改善其发光性能。目前，最新报道的绿光和红光钙钛矿量子点发光二极管（Pe-QLEDs）最大外量子效率（EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "）均超过20%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但蓝光Pe-QLED的发展相对滞后，仍存在亮度和效率较低的问题。尽管最新报道的天蓝光QLEDs（波长470~490 nm）最大外量子效率已经达到了13.8%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但该波长范围不能满足国家电视系统委员会标准（NTSC）的要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "（纯蓝色：460~470 nm）。因此，设计满足NTSC标准的高效率蓝光Pe-QDs和QLEDs仍然是亟需解决的挑战。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，蓝光Pe-QDs制备方式主要有两种。一种是基于量子尺寸效应，将CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " QDs粒径设计到小于4 nm。例如，Sargent课题组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在过量卤化物阴离子条件下利用低温热注入合成的方法实现了接近4 nm粒径的Pe-QDs，在478 nm处显示出天蓝光发射，其EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "达到12.3%。Tian课题组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用该策略进一步实现纯蓝光发射。通过酸刻蚀的方法合成小于4 nm粒径的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " QDs，在470 nm处显示蓝光发射，其EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "为4.7%，CIE色坐标为（0.13，0.11）。然而，小粒径量子点合成需要在低温条件下（80~120 ℃）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "实现，相比高温合成（120~250 ℃）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "反应速率慢、产率低，沉降离心得到的产物极少，形成的晶粒尺寸分布范围广，粒径均一性难以控制。因此导致光谱多峰发射，光谱变宽；同时晶粒尺寸越小表面积越大，其表面能越高，钙钛矿量子点表面产生的裸露质子Pb也越多，导致其形成的晶体卤素空位缺陷也越多" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另一种策略则是通过卤素离子掺杂（Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "）实现蓝光发射，进一步单掺" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位阳离子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "（Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "等）或者" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "位阳离子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R14", "R15", "R16", "R17", "R18" ], "text": "14-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "（Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Ni" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Nd" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "等）实现高效率的蓝光发射。2018年，Hou等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用两步合成法精确调节Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量实现蓝色光致发光，有效地钝化了缺陷，量子点溶液的PLQY从9％提高到28%。同时防止了Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "本身配位场跃迁产生的额外PL发射，表现为PL单峰发射。最终基于Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂Cs（Pb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Mn" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）（Br" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的QLED在466 nm处显示出纯蓝光发射，EQE从0.50％提高到2.12%，最大亮度达到245 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，实现了满足NTSC标准的蓝光钙钛矿QLED。在2019年，Su" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "课题组基于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂实现了蓝光发射，制备的QLEDs在466 nm处显示出纯蓝光发射，其最大外量子效率为0.6%。2020年，Song" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "课题组基于Ni" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂制备的蓝光Cs（Pb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ni" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）（Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "0.99" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "2.01" } ] }, { "name": "text", "data": "）的QLEDs，在掺杂2.5% Ni" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "时实现了470 nm处的蓝光发射，其最大外量子效率为2.4%。基于" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位和" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "位双阳离子共掺仅Zhao" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "课题组报道过，通过Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Ni" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "双阳离子共掺实现了蓝光发射，其量子点实际化学组成为（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "Ni" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "）（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "）。其中Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂有助于将发射波长精确地调整到所需的位置，并减轻了Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "空位的有害影响；Ni" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂则有助于去除卤化物空位，并改变Pe-QDs的能带以降低空穴注入势垒。文中进一步采用了双层聚（N,N-双-4-丁基苯基-N,N-双苯基）联苯胺（poly-TPD）/聚（9-乙烯基咔唑）（PVK）作为空穴传输层（HTL）以促进空穴传输，得到了在467 nm处显示蓝光发射的Pe-QLEDs，其EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "为2.14%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿八面体的稳定性可以用戈德施密特容忍因子" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879915&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879913&type=", "width": "1.10066664", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "进行评估，计算公式为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879921&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879918&type=", "width": "24.46866608", "height": "9.99066734", "fontsize": "" } } } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其中" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879925&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879923&type=", "width": "2.53999996", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "代表" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": " site离子半径；" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879930&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879928&type=", "width": "2.62466669", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "代表" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": " site离子半径；" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879934&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879932&type=", "width": "2.28600001", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "代表卤素离子半径。当" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879938&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879937&type=", "width": "19.30400085", "height": "2.70933342", "fontsize": "" } } } ] }, { "name": "text", "data": "时，形成八面体钙钛矿晶型；当" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879944&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879943&type=", "width": "1.10066664", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "值越接近1，八面体晶型稳定性越高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。计算得到CsPbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的八面体结构容忍因子" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879944&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879943&type=", "width": "1.10066664", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "为0.84，RbZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的容忍度因子" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879944&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879943&type=", "width": "1.10066664", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "为0.98，相比CsPbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "容忍度因子更接近1，八面体晶型结构稳定性显著提高。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文从钙钛矿离子晶型和八面体晶格稳定性出发，设计合成了在" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位掺杂与Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "同主族但电负性更小的Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "，" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "位掺杂与Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "具有相似电子结构但电负性更小的过渡金属离子Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "，最终在470 nm处实现了蓝色电致发光。Zn、Pb的电负性分别为1.65和1.80" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，形成的Zn—" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "键键长更短，键能更大，[" }, { "name": "italic", "data": [ { "name": "text", "data": "BX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "4-" } ] }, { "name": "text", "data": "八面体结构更加稳定。Cs、Rb的电负性分别为0.8和0.7，形成的Rb—" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "键键长更短，键能更大，" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶体结构更加稳定。此外，相比Cs—" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "、Pb—" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "键，Rb—" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "、Zn—" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "键共价键成分更高，因此形成的钙钛矿立方晶体共价成分增加，离子成分减少。这将有利于提高量子点材料的稳定性，并减弱在电场下掺杂卤素钙钛矿的离子迁移导致发光峰蓝移的现象。最终得到了PL发光峰为468 nm、半峰宽为19 nm的蓝光钙钛矿量子点，其实际化学组成为（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.93" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.07" } ] }, { "name": "text", "data": "）‐（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "）。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过对掺杂前后的钙钛矿量子点进行表征，发现Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺的量子点均一性最好，八面体晶型结构清晰完整，卤素空位缺陷少，相比未掺杂的钙钛矿量子点PLQY和辐射复合得到显著增强。基于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺的钙钛矿量子点制备了器件结构为ITO/PEDOT∶PSS/TFB/Pe-QDs/TPBi/LiF/Al的QLED器件，在470 nm处实现了蓝光发射，其EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "为3.55%。将本工作与已报道的器件性能进行对比（表S1）发现，超过了当前报道的掺杂制备蓝光钙钛矿量子点器件的最高效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1.1　化学药品" } ], "level": "3", "id": "s2a1" } }, { "name": "p", "data": [ { "name": "text", "data": "溴化铅（Lead bromide，PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，99.99%，购自西安宝莱特）；氯化铅（Lead chloride，PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，99.99%，购自西安宝莱特）；碳酸铯（Cesium carbonate，Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，99.99%，购自sigma Aldrich）；碳酸铷（Rubidium carbonate，Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，99.99%，购自sigma Aldrich）；溴化锌（Zinc bromide，ZnBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，99.99%，购自Macklin）；油胺（Oleylamine，Oam，90%，购自Aladdin）；油酸（Oleic acid，OA，90%，购自Aladdin）；1-十八烯（1-octadecene，ODE，90%，购自Aladdin）；三辛基膦（Trioctylphosphine，TOP，99.99%，购自sigma Aldrich）；正辛烷（Octane，90%，购自Aladdin）；甲苯（Toluene，90%，购自Aladdin）；乙酸乙酯（Ethyl acetate，90%，购自Aladdin）；PEDOT∶PSS 4083（购自西安宝莱特）。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1.2　量子点材料合成" } ], "level": "3", "id": "s2a2" } }, { "name": "p", "data": [ { "name": "text", "data": "采用热注入方法合成制备了Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺的蓝光钙钛矿量子点发光材料。合成实际化学组成为（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.93" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.07" } ] }, { "name": "text", "data": "）（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "） 的钙钛矿量子点（（Cs/Rb/Zn）-QDs）：在超净室称量Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（0.651 6 g）和Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（0.011 54 g）于25 mL三颈烧瓶中，并用移液枪移取0.5 mL OA、5 mL ODE注入烧瓶；在120 ℃条件下抽真空30 min，然后在氮气（N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）氛围下以10 ℃/min匀速升温到140 ℃得到（Cs/Rb）-OA前驱体溶液待用。在超净室中称量ZnBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.030 40 g）、PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.002 8 g）和PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.022 94 g）于25 mL三颈烧瓶中，并用移液枪移取1.5 mL OA、1.5 mL OAm、1.5 mL TOP和5 mL ODE注入烧瓶，在120 ℃条件下抽真空30 min。然后在氮气（N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）氛围下以10 ℃/min匀速升温到180 ℃；用1 mL注射器取0.6 mL上述制备的（Cs/Rb）-OA前驱体溶液快速注入，反应60 s后快速冰水浴冷却，得到（Cs/Rb/Zn）-QDs粗溶液。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Cs（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.93" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.07" } ] }, { "name": "text", "data": "）（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "）蓝光钙钛矿量子点材料（（Cs/Zn）-QDs）合成：称量Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（0.081 46 g）、 ZnBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.030 40 g）、PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.002 8 g）和PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.022 94 g）；（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）Pb（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "） 蓝光钙钛矿量子点材料（（Cs/Rb）-QDs）的合成：称量Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（0.651 6 g）、 PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.052 30 g）和PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.022 94 g）；CsPb（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "） 钙钛矿量子点（Cs-QDs）的合成：称量Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（0.081 46 g）、PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.052 30 g）和PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（0.022 94 g）。其他合成实验条件与（Cs/Rb/Zn）-QDs保持一致。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "将上述得到的量子点粗溶液进行纯化。首先将粗溶液和乙酸乙酯按体积比1∶1进行离心提纯（8 000 r/min，3 min）；取沉淀物滴加3 mL甲苯溶解，按甲苯∶ 乙酸乙酯体积比3 ∶ 1进行离心提纯（8 000 r/min，3 min）；最后将提纯得到的量子点沉淀物均匀分散到1.5 mL正辛烷中，得到Cs-、（Cs/Rb）-、（Cs/Zn）-和（Cs/Rb/Zn）-QDs溶液（如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）~ （f）所示），并在氮气氛围的手套箱中密封保存。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "发光器件结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Schematic diagram of the structure of the light-emitting device" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879945&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879947&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879946&type=", "width": "54.52532959", "height": "45.04266357", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "Cs-、（Cs/Rb）-、（Cs/Zn）-、（Cs/Rb/Zn）-QDs XRD曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "XRD diffraction patterns of Cs-， （Cs/Rb）-， （Cs/Zn）-， （Cs/Rb/Zn）-QDs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879948&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879951&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879950&type=", "width": "64.17500305", "height": "56.27670288", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "Cs-QDs（a）、（Cs/Zn）-QDs（b）、（Cs/Rb）-QDs（c）、（Cs/Rb/Zn）-QDs（d）的TEM图像（左）和HRTEM图像（右）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "TEM images（left） and HRTEM images（right） of Cs-QDs（a）， （Cs/Zn）-QDs（b）， （Cs/Rb）-QDs（c）， （Cs/Rb/Zn）-QDs（d）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879952&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879955&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879954&type=", "width": "107.96228027", "height": "145.47906494", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "Cs-QDs、（Cs/Zn）-QDs、（Cs/Rb）-QDs、（Cs/Rb/Zn）-QDs 的Pb 4f能级XPS谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Pb 4f level XPS spectra of Cs-QDs， （Cs/Zn）-QDs， （Cs/Rb）-QDs， （Cs/Rb/Zn）-QDs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879956&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879960&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879958&type=", "width": "65.58612061", "height": "56.90194702", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）Cs-、（Cs/Zn）-、（Cs/Rb）-、（Cs/Rb/Zn）-QDs溶液（4 mg/mL）PL谱；（b）Cs-、（Cs/Zn）-、（Cs/Rb）-、（Cs/Rb/Zn）-QDs溶液（4 mg/mL）、薄膜样品PLQY；（c）Cs-QDs溶液PL谱和吸收谱；（d）（Cs/Zn）-QDs溶液PL谱和吸收谱；（e）（Cs/Rb）-QDs溶液PL谱和吸收谱；（f）（Cs/Rb/Zn）-QDs 溶液PL谱和吸收谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "（a）PL spectra of Cs-， （Cs/Zn）-， （Cs/Rb）-， （Cs/Rb/Zn）-QDs solution（4 mg/mL）. （b）Cs-， （Cs/Zn）-， （Cs/Rb）-， （Cs/Rb/Zn）-QDs solution（4 mg/mL）， thin film sample PLQY. （c）Cs-QDs solution PL spectrum and absorption spectrum. （d）PL spectrum and absorption spectrum of （Cs/Zn）-QDs solution. （e）PL spectrum and absorption spectrum of （Cs/Rb）-QDs solution. （f）PL spectrum and absorption spectrum of （Cs/Rb/Zn）-QDs solution." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879962&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879968&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879966&type=", "width": "140.23829651", "height": "143.21249390", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "制备蓝光钙钛矿QLEDs的器件结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示：ITO/PEDOT∶PSS/TFB/Pe-QDs/TPBi/LiF/Al。其中ITO和Al分别作为器件的阴极和阳极。其器件制备流程如下：" } ] }, { "name": "p", "data": [ { "name": "text", "data": "ITO基板的清洗：分别用四氢呋喃、异丙醇、洗液、去离子水和异丙醇超声清洗15 min后放至烘箱烘干备用，在超净室中进行该步骤。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "空穴注入层（PEDOT∶PSS）的制备：将清洗干净的ITO基板进行紫外UV处理12 min；在超净室大气氛围中，用旋涂的方式制备PEDOT∶PSS薄膜，旋涂前用0.45 μm水相滤嘴过滤，旋涂转速为5 000 r/min，持续时间为30 s；然后转移到氮气氛围的手套箱中，置于加热台上以150 ℃的温度加热15 min，冷却5 min。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "空穴传输层（TFB）的制备：在氮气氛围的手套箱中，用旋涂的方式在PEDOT∶PSS薄膜上制备TFB薄膜，TFB浓度为4 mg/mL（溶剂为甲苯），旋涂转速为3 000 r/min，持续时间为30 s，置于加热台上以120 ℃的温度加热15 min，冷却5 min。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "发光层的制备：在氮气氛围的手套箱中，使用2.1.2中合成制备的量子点溶液（浓度为40 mg/mL），采用旋涂的方式在TFB薄膜上制膜，旋涂转速为1 500 r/min，持续时间为30 s；然后在60 ℃下加热15 min，冷却5 min。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "其他功能层的制备都是采用真空蒸镀工艺，其中TPBi作为电子传输层，LiF作为电子注入层。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　样品表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "薄膜厚度测量使用台阶扫描仪（Dektak 150，Veeco公司）。薄膜及溶液的紫外-可见吸收光谱采用紫外-可见分光光度计（UV-2600，苏州岛津仪器有限公司）。器件光电性能的表征使用四合一数字源表（Keithley2400，美国Keithley公司）和分光色度计（CS200，日本Konica Minolta公司）。荧光寿命采用时间分辨荧光寿命光谱仪（C11367-11，日本滨松光子学株式会社）。量子点形态和尺寸变化采用透射电子显微镜（TEM）、高分辨透射电子显微镜（HRTEM）（Titan Themis 200，美国FEI公司）。元素价态分析和功函数测定采用X射线光电子能谱分析（XPS）、紫外光电子能谱分析（UPS）（K-ALPHA+，美国Thermo Fisher Scientific公司）。量子点晶格变化情况采用X射线衍射分析（XRD）（Empyrean DY1577，荷兰PANA lytical公司）。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "选择Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的主要原因：（1）Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "半径比Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "半径小，与Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "适配形成稳定的八面体晶型需要更小离子半径的" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "B " } ] }, { "name": "text", "data": "位阳离子；Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "相比Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "具有更小的离子半径。 （2）掺杂离子需要与原来的" }, { "name": "italic", "data": [ { "name": "text", "data": "A " } ] }, { "name": "text", "data": "位（Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）和" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": " 位（Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "）具有相似的电子结构和化学性质，有利于形成稳定的钙钛矿八面体晶型。Rb与Cs处于同一主族，具有相近的化学性质，并且Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "离子半径更小，是较好的" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位掺杂离子。 （3）Zn处于过渡金属元素区，其常见价态与Pb一致，并且Zn—Cl键也可以形成与[PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "4-" } ] }, { "name": "text", "data": "八面体结构相似的[ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "4-" } ] }, { "name": "text", "data": "八面体结构。 （4）Zn、Pb的电负性分别为1.65和1.8" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，形成的Zn—Cl键相比Pb—Cl键共价键成分更多，同时Zn—Cl键键长更短，形成的Zn—Cl键键能更大，得到的 [ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "4-" } ] }, { "name": "text", "data": "八面体结构更加稳定，减少了Cl空位缺陷的形成。 （5）Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂实现量子点VBM上移了0.31 eV，这将降低从空穴传输层（HTL）到发光层（EML）的空穴注入势垒，有利于空穴注入。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　掺杂Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "对量子点稳定性的影响" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "在探究掺杂Rb、Zn对量子点稳定性的影响之前，首先需要确定Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "是否进入晶格。从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": " 的X光衍射数据可知，（Cs/Rb）-QDs、（Cs/Rb/Zn）-QDs的（100）、（200）晶面衍射峰相比Cs-QDs向较大的衍射角度方向移动。这是由于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "的离子半径比Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "的小，以及由此产生的晶格收缩" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而导致了向衍射角增大的方向移动，同时也为Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂进入晶格提供了证据。（Cs/Zn）-QDs的（200）晶面衍射峰相比Cs-QDs具有更高的强度，这是由于Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂进入晶格导致其薄膜取向发生变化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "因此，量子点结构稳定性的主要影响因素有：量子点的尺寸大小、量子点的粒径分布均匀性和量子点立方晶型的规整程度。尺寸越小，比表面积越大，表面能越高，量子点稳定性越差；在高温热注入合成条件下，反应主要由热力学因素控制，量子点倾向于形成更稳定、均匀的晶体结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在制备的蓝光钙钛矿量子点中，未掺杂的Cs-QDs八面体晶型稳定性差，这将导致出现如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）（右）中HRTEM图像中立方晶相不明显、规整程度差的现象，同时在" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）（左）的TEM图像中发现粒径分布均匀性差。对比（Cs/Rb）-QDs、（Cs/Zn）-QDs、（Cs/Rb/Zn）-QDs的尺寸均匀性和晶型规整程度，发现（Cs/Rb/Zn）-QDs尺寸均匀性最好，同时可以观察到规整的立方体晶型和清晰的晶格条纹。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步探究Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂对量子点稳定性的影响，并确定其掺杂的实际含量，对Cs-、（Cs/Rb）-、（Cs/Zn）-、（Cs/Rb/Zn）-QDs进行了XPS元素分析测试，并对Pb元素的高分辨谱进行了分析，结果如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示（不同量子点的Pb 4f能级XPS单独拟合谱见图S1）。Pe-QDs中的Pb元素有两种不同化学环境，考虑到Pb—Cl键和Pb—Br键的结合能非常接近，将高结合能区归属为卤化铅，将低结合能区归属为油酸铅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对比发现（Cs/Zn）-QDs的卤化铅∶油酸铅的相对比值高于Cs-QDs，（Cs/Rb/Zn）-QDs相比（Cs/Rb）-QDs表现出同样的趋势。这说明Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂导致了卤化铅含量增加，即卤化物阴离子空位缺陷减少，Pb-卤化物（Pb-Cl，Pb-Br）八面体的完整性提高。通过定量XPS分析计算掺杂前后卤化物的含量变化，发现（Cs/Zn）-QDs相比Cs-QDs的卤化物与Pb含量比值从3.17增加到3.77，（Cs/Rb/Zn）-QDs相比（Cs/Rb）-QDs卤化物与Pb含量比值从 3.37增加到3.97，进一步验证了Pb-卤化物八面体在（Cs/Rb/Zn）-QDs条件下具有更好的完整性和更低的卤化物阴离子缺陷密度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在图S2~S5中分别给出了Br 3d、Cs 3d、Rb 3d和Cl 2p的XPS元素分析谱图。可以发现Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "有效结合在一起形成了钙钛矿晶体。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂对量子点光学性能的影响" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "蓝光钙钛矿量子点溶液的PL光谱如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）所示，Cs-QDs的PL发光峰位于474 nm处，其PL强度相对最弱；当掺杂Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后PL发光峰红移5 nm，PL相对强度变化不明显。这是因为掺杂Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的量子点相比未掺杂平均粒径增大了5 nm，PL峰在量子尺寸效应的影响下红移到479 nm处。当掺杂Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "后PL发光峰相比Cs-QDs蓝移8 nm，同时PL相对强度显著增强。这是因为Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂导致钙钛矿八面体晶型倾斜，带隙增大而造成发光峰蓝移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；同时在如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示的TEM图像中可知，相比Cs-QDs，（Cs/Rb）-QDs平均粒径减小了4 nm，在量子尺寸效应影响下，PL发光峰进一步发生蓝移。在两者共同作用下，（Cs/Rb）-QDs的PL发光峰蓝移到466 nm处。Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺后PL发光峰相比Cs-QDs蓝移6 nm。这是因为一方面Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂导致的八面体倾斜而造成发光峰蓝移；另一方面是造成量子点粒径减小的Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂和造成量子点粒径增大的Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂相互竞争下，（Cs/Rb/Zn）-QDs平均粒径相比Cs-QDs减小1 nm。在两者共同作用下，（Cs/Rb/Zn）-QDs 的PL发光峰蓝移到468 nm，相比Cs-QDs蓝移6 nm。同时，（Cs/Rb/Zn）-QDs具有最大的PL相对强度。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）则表征了溶液和薄膜形态样品的PLQY变化情况，（Cs/Rb/Zn）-QDs溶液和薄膜样品具有最高的PLQY，分别为52%和40%。这是因为Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂提高了晶格的稳定性，减少了卤化物阴离子空位缺陷的形成，进一步抑制了非辐射复合，从而PLQY得到了显著提高。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）可知，（Cs/Rb/Zn）-QDs的激子吸收峰约为459 nm，发光峰位468 nm，半峰宽19 nm（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（f）），较窄的半峰宽表明Pe-QDs尺寸均匀。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了探究Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂对Pe-QDs的激子动力学影响，对样品进行了TRPL测试来表征激子的复合情况。发现拟合的数据分为三个部分，第一部分是单分子复合（" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "），第二部分是双分子辐射复合（" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "），第三部分是非辐射复合。而影响钙钛矿量子点发光性能的主要是双分子辐射复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中发现，（Cs/Rb/Zn）-QDs相比Cs-QDs实现了" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "从11.38 ns到23.89 ns超过一倍的提升，平均寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "av" } ] }, { "name": "text", "data": "从14.56 ns到33.10 ns的127%提升。从PL瞬态寿命曲线可知，Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂使得双分子辐射复合得到了显著增强，非辐射复合受到抑制。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "掺杂前后Pe-QDs的PL衰减曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "PL decay curves of Pe-QDs before and after doping" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879973&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879980&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879977&type=", "width": "66.77313232", "height": "53.31063843", "fontsize": "" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "掺杂前后Pe⁃QDs 的PL 衰减寿命汇总" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Summary of PL decay lifetime of Pe-QDs before and after doping" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Pe⁃QDs种类" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "/ns" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/ns" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ns" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "av" } ] }, { "name": "text", "data": "/ns" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "Cs⁃QDs" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.89" } ] }, { "align": "center", "data": [ { "name": "text", "data": "11.38" } ] }, { "align": "center", "data": [ { "name": "text", "data": "64.98" } ] }, { "align": "center", "data": [ { "name": "text", "data": "14.56" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "（Cs/Zn）⁃QDs" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.14" } ] }, { "align": "center", "data": [ { "name": "text", "data": "13.55" } ] }, { "align": "center", "data": [ { "name": "text", "data": "74.05" } ] }, { "align": "center", "data": [ { "name": "text", "data": "16.87" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "（Cs/Rb）⁃QDs" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.09" } ] }, { "align": "center", "data": [ { "name": "text", "data": "14.96" } ] }, { "align": "center", "data": [ { "name": "text", "data": "89.12" } ] }, { "align": "center", "data": [ { "name": "text", "data": "20.17" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "（Cs/Rb/Zn）⁃QDs" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "7.04" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "23.89" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "135.44" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "33.10" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879985&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879982&type=", "width": "77.69583130", "height": "27.71034241", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究掺杂前后量子点材料能带变化情况，进行了UPS测试。不同种类量子点价带边和二次电子截止边变化情况如图S6、S7所示。Cs-、（Cs/Zn）-、（Cs/Rb）和（Cs/Rb/Zn）-QDs的价带顶（VBM）分别为6.83，6.75，6.74，6.52 eV。根据吸收谱图计算得到其带隙分别为2.56，2.51，2.60，2.53 eV，可以计算得到其导带底（CBM）分别为4.27，4.24，4.14，3.99 eV。发现Cs/Rb/Zn-QDs相比Cs-QDs的VBM上移了0.31 eV，这将降低从空穴传输层（HTL）到发光层（EML）的空穴注入势垒，促进空穴载流子的注入。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂量子点发光二极管器件" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿量子点电致发光器件能级结构如" }, { "name": "xref", "data": { "text": "图 7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图 7" } ] } }, { "name": "text", "data": "（a）所示，基于该结构制备了Cs-QLEDs、（Cs/Zn）-QLEDs、（Cs/Rb）-QLEDs、（Cs/Rb/Zn）-QLEDs电致发光器件以进一步探究Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂对电致发光的影响。发现基于Cs-QDs的器件电致发光出现了强烈的空穴侧寄生峰发射，主发射峰在438 nm处，为空穴传输层（TFB）电致发光峰；基于（Cs/Rb）-QDs的器件相比Cs-QDs寄生峰发射有所降低，主发光峰在468 nm处，为发光层（Pe-QDs EML）电致发光峰；而（Cs/Zn）-QLEDs、（Cs/Rb/Zn）-QLEDs的寄生峰发射得到了显著降低，主发光峰分别为478 nm和470 nm，如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）所示。对于空穴侧寄生发光现象，通过更换其他HTL材料（如PVK、Poly-TPD和PTAA等）或者在HTL、EML层之间插入5 nm的PFI薄层的方式来实现抑制或者消除，见图S8、S9和表S2、S3。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）蓝光钙钛矿QLED器件能级结构示意图；Cs-QDs、（Cs/Zn）-QDs、（Cs/Rb）-QDs、（Cs/Rb/Zn）-QDs在0.5 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下的器件电致发光光谱（b）、器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J⁃V⁃L" } ] }, { "name": "text", "data": "特性（c）、" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-CE特性（d）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "（a）Schematic diagram of the energy level structure of blue perovskite QLED devices. Electroluminescence spectra（b）， " }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": " characteristics（c）， " }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-CE characteristics（d） of the devices under the current of 0.5 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "of Cs-QDs， （Cs/Zn）-QDs， （Cs/Rb）-QDs， （Cs/Rb/Zn）-QDs ." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879988&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879994&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879991&type=", "width": "147.98083496", "height": "104.93406677", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "器件的电流密度和亮度随电压变化（" }, { "name": "italic", "data": [ { "name": "text", "data": "J⁃V⁃L" } ] }, { "name": "text", "data": "）特性以及电流效率曲线如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（c）、（d）所示。从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（c）中可以发现，器件启亮前，（Cs/Rb）-QLEDs相比Cs-QLEDs具有更大的漏电流。这可能是由于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂导致了钙钛矿八面体倾斜，量子点的晶型规整性变差，晶格与晶格之间出现孔洞所致；而（Cs/Rb/Zn）-QLEDs由于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺的作用，八面体晶型稳定，得到了比较稳定和规整的量子点颗粒，漏电流相比Cs-QLEDs有了一定程度的降低。与Cs-QLEDs在4.6 V启亮相比，（Cs/Zn）-QLEDs 的启亮电压降低到3.9 V，（Cs/Rb/Zn）-QLEDs的启亮电压降低了1.0 V。这可能是因为Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂降低了VBM，提高了空穴载流子注入和传输能力，同时掺杂后辐射复合得到显著增强也进一步降低了启亮电压。而Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂的QLED器件启亮电压相比Cs-QLEDs降低了1.5 V，相比（Cs/Rb/Zn）-QLEDs降低了0.5 V。为了探究（Cs/Rb）-QLEDs启亮电压并不随着VBM规律变化的原因，制备了器件结构为ITO/QDs/TPBi/LiF/Al的单载流子器件。在支撑材料图S10中，（Cs/Rb）-QDs的单载流子器件在相同电压下相比（Cs/Rb/Zn）-QDs的单载流子器件具有更高的载流子注入，这将进一步降低（Cs/Rb）-QLEDs的启亮电压。与Cs-QLEDs器件相比，（Cs/Rb）-QLEDs的电流密度有较大的提高，（Cs/Rb/Zn）-QLEDs有所降低，这说明电流密度不是制约器件效率的关键原因。与其他三种Pe-QLEDs相比，在相同的电压下，（Cs/Rb/Zn）-QLEDs具有更低的电流密度和更大的亮度，因而实现了电流效率（CE）和EQE的提高。这可能是因为Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的QDs辐射复合显著增强，载流子利用率大大提高。对比器件的亮度和电流效率，Cs-QLEDs、（Cs/Zn）-QLEDs最大亮度不超过3 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大电流效率仅0.04 cd/A和0.14 cd/A。相比未掺杂的Cs-QLEDs，掺杂Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的（Cs/Rb/Zn）-QLEDs器件最大亮度从1 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "提高到了205 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大电流效率从0.04 cd/A提高到了3.29 cd/A，最大EQE达到3.55%，CIE色坐标为（0.15,0.11），如图S11所示。在0.5 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流下的器件发光如图S12（b）所示，图S12和图S13给出了器件光谱稳定性和器件寿命变化情况。不同掺杂的Pe-QLEDs器件性能数据汇总在" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "，基于（Cs/Rb/Zn）-QLEDs器件对TFB厚度和发光层厚度的优化数据见表S4、S5。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "Cs⁃QDs、（Cs/Zn）⁃QDs、（Cs/Rb）⁃QDs、（Cs/Rb/Zn）⁃QDs器件性能汇总" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Device performance of the Cs-QDs， （Cs/Zn）-QDs， （Cs/Rb）-QDs， （Cs/Rb/Zn）-QDs" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Pe-QDs种类" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "V" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "CE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "/%" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "Cs-QDs" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.60" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.04" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "（Cs/Zn）-QDs" } ] }, { "align": "center", "data": [ { "name": "text", "data": "3.90" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.14" } ] }, { "align": "center", "data": [ { "name": "text", "data": "3" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "（Cs/Rb）-QDs" } ] }, { "align": "center", "data": [ { "name": "text", "data": "3.10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.26" } ] }, { "align": "center", "data": [ { "name": "text", "data": "369" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.21" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "（Cs/Rb/Zn）-QDs" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "3.60" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "3.29" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "205" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "3.55" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35880001&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879998&type=", "width": "77.69583130", "height": "31.06796646", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "最后，制备了单空穴载流子器件以探究掺杂前后量子点材料的缺陷密度变化情况，如图S10所示。器件结构为：ITO/PEDOT∶PSS/TFB/QDs/MoO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "/Al。从图中可以发现，（Cs/Rb/Zn）-QDs具有最小的" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "TFL" } ] }, { "name": "text", "data": "，相比Cs-QDs从1.33 V降低到了0.89 V。而" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "TFL" } ] }, { "name": "text", "data": "与量子点材料的缺陷态密度呈正相关。因此，掺杂Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "可以有效降低量子点的缺陷态密度，提高相应器件的发光性能。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "通过共掺Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "设计合成了一种蓝光钙钛矿量子点材料，在470 nm处实现蓝光发射，与未掺杂相比其发光性能得到了显著提升。主要原因是小粒径Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "与Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "具有更高的容忍度因子 （" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "=0.98），形成的（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "Rb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "）（Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.93" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "0.07" } ] }, { "name": "text", "data": "）（Br" }, { "name": "sub", "data": [ { "name": "text", "data": "1.8" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "1.2" } ] }, { "name": "text", "data": "）钙钛矿晶体具有更规整的晶型结构，提高了量子点的稳定性；同时Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂导致晶格收缩和Zn—Cl键相比Pb—Cl键更稳定而卤素空位缺陷得到显著降低（Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "空位），实现了辐射复合相比掺杂前110%的显著提升。基于Rb" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂制备的（Cs/Rb/Zn）-QLEDs器件启亮电压为3.60 V，最大亮度为205 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最高电流效率为3.29 cd/A，最大EQE为3.55%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文补充文件及专家审稿意见和作者回复信的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220097." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220097." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PROTESESCU L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YAKUNIN S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BODNARCHUK M I" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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