Influence of Different O2 or N2 Plasma Powers to TiN<italic style="font-style: italic">x</italic> Anode Surface on OLEDs-on Silicon Performance

LI Xiang; LIU Hai; WEI Bin; ZHANG Jian-hua

doi:10.37188/CJL.20220046

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Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance

Luminescence Industry and Technology Frontier | Updated：2022-10-19

- Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance Enhanced Publication
- Chinese Journal of Luminescence Vol.43, Issue 6, (2022)
- Affiliations：
  
  School of Materials Science and Engineering， Shanghai University,Shanghai,China,200072;Key Laboratory of Advanced Display and System Applications of Ministry of Education， Shanghai University,Shanghai,China,200072
- Author bio：
- Funds：
  
  National Natural Science Foundation of China(51725505);Shanghai Science and Technology Commission(18JC1410402;15JC1402000);The Open Fund of Key Laboratory of Advanced Display and System Applications of Ministry of Education
- DOI：10.37188/CJL.20220046 CLC： TN383⁺.1
- Published：05 June 2022，
  
  Received：14 February 2022，
  
  Revised：06 March 2022，
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李祥,刘海,魏斌等.不同功率O₂或N₂等离子处理TiN_x阳极表面对硅基OLED发光性能的影响[J].发光学报,2022,43(06):934-943.

LI Xiang,LIU Hai,WEI Bin,et al.Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance[J].Chinese Journal of Luminescence,2022,43(06):934-943.
李祥,刘海,魏斌等.不同功率O₂或N₂等离子处理TiN_x阳极表面对硅基OLED发光性能的影响[J].发光学报,2022,43(06):934-943. DOI： 10.37188/CJL.20220046.

LI Xiang,LIU Hai,WEI Bin,et al.Influence of Different O₂ or N₂Plasma Powers to TiN_x Anode Surface on OLEDs-on Silicon Performance[J].Chinese Journal of Luminescence,2022,43(06):934-943. DOI： 10.37188/CJL.20220046.

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{ "lang": "zh", "surname": "李", "givenname": "祥", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Xiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "李祥（1996-），男，安徽安庆人，硕士研究生，2019年于安徽理工大学获得学士学位，主要从事硅基微显示器件阳极表面处理方面的研究。Email: 2575154029@shu. edu. cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879465&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879472&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879469&type=", "width": "24.89200020", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "李祥" }, { "name": "text", "data": "（1996-），男，安徽安庆人，硕士研究生，2019年于安徽理工大学获得学士学位，主要从事硅基微显示器件阳极表面处理方面的研究。Email: " }, { "name": "text", "data": 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"lang": "zh", "text": "2575154029@shu.edu.cn张建华（1972-），女，湖北恩施人，博士，教授，1999年于上海大学获得博士学位，主要从事半导体机电、微制造与微系统集成技术等方面的研究。", "data": [ { "name": "text", "data": "2575154029@shu.edu.cn张建华（1972-），女，湖北恩施人，博士，教授，1999年于上海大学获得博士学位，主要从事半导体机电、微制造与微系统集成技术等方面的研究。" } ] } ], "bio": [ { "lang": "zh", "text": [ "张建华（1972-），女，湖北恩施人，博士，教授，1999 年于上海大学获得博士学位，主要从事半导体机电、微制造与微系统集成技术等方面的研究。Email: jhzhang@oa.shu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879481&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879481&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879481&type=", "width": "24.89200020", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "张建华" }, { "name": "text", "data": "（1972-），女，湖北恩施人，博士，教授，1999 年于上海大学获得博士学位，主要从事半导体机电、微制造与微系统集成技术等方面的研究。Email: " }, { "name": "text", "data": "jhzhang@oa.shu.edu.cn" } ] ] } ], "email": "jhzhang@oa.shu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "上海大学材料科学与工程学院，上海　200444", "data": [ { "name": "text", "data": "上海大学材料科学与工程学院，上海　200444" } ] }, { "lang": "en", "label": "1", "text": "School of Materials Science and Engineering， Shanghai University， Shanghai 200444， China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering， Shanghai University， Shanghai 200444， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "上海大学新型显示技术及应用集成教育部重点实验室，上海　200072", "data": [ { "name": "text", "data": "上海大学新型显示技术及应用集成教育部重点实验室，上海　200072" } ] }, { "lang": "en", "label": "2", "text": "Key Laboratory of Advanced Display and System Applications of Ministry of Education， Shanghai University， Shanghai 200072， China", "data": [ { "name": "text", "data": "Key Laboratory of Advanced Display and System Applications of Ministry of Education， Shanghai University， Shanghai 200072， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "硅基有机发光二极管是微显示领域的一个重要研究方向。本文以硅基微显示器件中阳极与有机层关键界面材料氮化钛为研究对象，通过研究不同条件的等离子处理引起的表面微结构形貌、功函数、载流子浓度、载流子迁移率、反射率以及X射线光电子能谱变化，探究有机发光性能的表面处理方法。结果显示，合适功率的等离子处理（O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "：60 W或N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "：80 W）能够显著提升硅基显示器件的发光亮度（O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "：70%，N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "：128%）；同时，电流效率和功率效率分别提高了35%和58%。通过比较各个参数，等离子处理改变的Ti和 N元素的价态被认为可提高界面载流子浓度和迁移率从而优化发光性能。该研究细化了一种新颖的硅基显示器件性能提升方法，为相关研究提供了方向。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Organic light emitting diode on silicon is an important research topic in the microdisplay field. In the paper， we present a systematic study about the influence of plasma treatment to the titanium nitride， which is the key interface between the anode and organic layers. The changes of characteristic parameters， including the morphology of surface microstructure， work function， carrier concentration， carrier mobility， reflectance， and the X-ray photoelectron spectroscopy after plasma treatments， are summarized to optimize the performance of integrated organic light emitting diodes. The results show that the plasma treatment with appropriate power（60 W for O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " or 80 W for N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "） can significantly improve the luminance（70% for O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and 128% for N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "） of display device on silicon. Meanwhile， the current and power efficiency are increased by 35% and 58%， respectively. It was revealed that the valence states of Ti and N are changed during the plasma treatment， which are considered to improve the interfacial carrier concentration and mobility for an enhanced luminescence performance. This study elaborates an approach to improve the performance of a typical microdisplay device on silicon and provides a guide for related researches." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "等离子处理" } ], [ { "name": "text", "data": "硅基OLED" } ], [ { "name": "text", "data": "氮化钛" } ], [ { "name": "text", "data": "载流子浓度及迁移率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "plasma treatment" } ], [ { "name": "text", "data": "organic light emitting diode（OLED）-on silicon" } ], [ { "name": "text", "data": "titanium nitride" } ], [ { "name": "text", "data": "carrier concentration and mobility" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "有机发光二极管（Organic light emitting diode，OLED）微显示器因分辨率高、重量轻、体积小、功耗低、响应时间快、对比度高、色彩丰富等特点，在军事和商业产品中的潜在应用受到了广泛关注，能够解决可穿戴电子设备大视图尺寸需求和小物理设备尺寸之间的矛盾" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。作为一种新兴显示器件，OLED微显示器不仅涉及光电技术，还涉及微电路领域，相关工艺研究具有较高复杂度。其中集成电路标准化制造与有机材料蒸镀的工艺连接是制约OLED微显示器件的发光性能和生产良率的主要瓶颈，集中体现在处于集成电路（IC）制造流程末端、有机材料蒸镀工艺初始步骤的、作为半导体与有机材料界面的合金薄膜氮化钛（TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该薄膜在IC制造工艺中面向显示应用一般由物理气相沉积（PVD）技术形成，主要起阻挡材料扩散作用，其形貌一般未做处理，表面较为粗糙" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R7", "R8", "R9" ], "text": "7-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "阳极和有机材料的表面特性差异会导致形态和电学特性的非一致性，在OLED微显示器中阳极一般选取高功函数、反射率、载流子浓度与迁移率的材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过各种物理化学处理可改善阳极表面的微观结构，从而改变其应用特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。比如，湿法处理中的酸洗处理可去除Fe掺杂TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表面的氧化铁污染层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；紫外臭氧处理可提高MoTe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的电导性能，空穴浓度和迁移率提高了近100倍" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；等离子处理能够提高Cu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "ZnSnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "太阳能电池的开路电压" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在发光器件电极表面处理方面，O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理能够减少氧化铟锡（ITO）表面污染，提升载流子迁移率并恢复In—O键合，以及提高或调制其功函数等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；而N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理能够降低氮化铝（AlN）薄膜粗糙度，提高其稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，降低银纳米线的薄层电阻等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些处理在改变功函数、表面粗糙度、反射率、载流子传输等方面具有明显效果，从而调制OLED器件发光性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在本研究中，我们应用不同功率的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子体处理，研究处理后的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面结构与其对OLED器件发光性能的调制作用。结合不同条件处理后TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面特性以及相应的电学和光学性能测量结果，建立TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面特性与以其为阳极材料的硅基OLED器件的构性关系。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　阳极处理方法" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面处理与OLED发光性能之间的联系，实验中首先制备TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "基片。以尺寸为24 mm×24 mm、厚度为0.8 mm的二氧化硅作为衬底，在表面依次通过磁控溅射（CME-200E，ULVAC）沉积粘附层Mo、反射层Al和界面层TiN" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "形成阳极，腔体压力为1.33×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " Pa（10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " torr），沉积速率为0.3 nm/s。形成的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "阳极依次在丙酮、无水乙醇和去离子水中各超声清洗1 h后热烘20 min，然后进行紫外臭氧处理去除残留有机物。最后，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示，将基片放置于等离子处理腔室，压力控制在3.2 Pa（0.024 torr），气体流量设定为30 mL/min，分别用20，40，60，80，100，150 W功率的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面，时间设置为300 s。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "等离子处理示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagram of plasma treatment" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879484&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879491&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879487&type=", "width": "67.94683838", "height": "69.81103516", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　发光器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "本工作所采用的OLED器件结构为SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Mo（50 nm）/Al（100 nm）/TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（15 nm）/MoO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "（5 nm）/TAPC（30 nm）/NPB（20 nm）/Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（50 nm）/Liq（0.5 nm）/Mg∶Ag（1∶9）（25 nm）/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（25 nm），如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。该器件为顶发射器件，其中关键膜层TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "作为OLED阳极，4,4'-环己基二[N,N-二（4-甲基苯基）苯胺（TAPC）和N,N'-二苯基-N,N'-（1-萘基）-1,1'-联苯-4,4'-二胺（NPB）作为空穴传输材料，8-羟基喹啉铝（Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）作为发光层和电子传输材料，8-羟基喹啉锂（Liq）作为电子注入材料，Mg∶Ag（1∶9）作为阴极材料，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为封装材料。有机发光和金属电极材料通过热蒸发技术（Sineva,G2）沉积，腔体压力保持在1.33×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " Pa（10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": " torr），用石英晶体微天平控制薄膜的沉积速率和厚度，MoO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "和有机材料的蒸发速率约为0.02～0.1 nm/s，Mg和Ag的沉积速率分别为0.02 nm/s和0.18 nm/s。沉积完成的基片直接于真空环境下送入ALD设备中进行Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "封装后取出进行测试。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "OLED器件。（a）器件结构图；（b）能级图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "OLED device. （a）Schematic diagram of device. （b）Diagram of energy level." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879495&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879504&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879499&type=", "width": "142.07067871", "height": "50.37666321", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　测试分析" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "实验通过SpectraScan PR670光谱辐射亮度计测试和记录电压、亮度、电流效率和功率效率等数据。原子力显微镜用于测量处理前后TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面粗糙度，功函数仪（SNS FJ-1008 M8×1.25）测试TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面的功函数，霍尔效应测试仪（HMS-7000）测试电子载流子浓度和迁移率，X射线光电子能谱（X-ray Photoelectron Spectroscopy，XPS，Thermo Scientific K-Alpha）验证薄膜表面成分并进行电子状态分析，使用紫外-可见-近红外光谱仪（PE lambda 750）测量TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的光学反射率。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　电学特性和粗糙度变化" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "OLED 阳极金属层TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面粗糙度和功函数对于器件的性能非常重要" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。功函数的测试基于金属连接时会形成接触电位差，其值等于功函数之差除以电子电荷。为了阐明TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面特性对OLED性能的影响，本工作首先测试了不同等离子处理前后TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面粗糙度（RMS）及功函数的变化（Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "φ" } ] }, { "name": "text", "data": "）并示于" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "。经O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的表面粗糙度随着等离子体发生功率的增加而逐渐下降，而功函数随着功率的增加呈现逐渐上升的趋势。N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的TiN" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "表面测量结果与之相反，在功率较低时，相较于未处理的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面粗糙度下降，但随着功率的增加，粗糙度逐渐上升；在功函数方面，所有功率下的N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理都会降低TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的功函数，并且幅度随着功率的增加而增加。氮化钛的光电性质很大程度受Ti/N比、晶粒尺寸、杂质、缺陷的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而功函数主要取决于晶粒尺寸和晶体取向" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，等离子处理能够改变Ti/N的比值，从而影响晶体尺寸，最终导致功函数的变化。根据结果可知，O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理都将导致粗糙度和功函数的变化，进而调制OLED器件稳定性及效率等方面的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R23", "R24" ], "text": "23-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同功率等离子处理的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " parameters after different plasma treatments with various powers" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "等离子功率/W" } ] 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"data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] ], "body": [ [ { "rowspan": "7", "align": "center", "data": [ { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] }, { "align": "center", "data": [ { "name": "text", "data": "未经处理" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.211" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.99" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.63" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.05" } ] }, { "align": "center", "data": [ { "name": "text", "data": 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"name": "text", "data": "150" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "-0.43" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "2.676" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "2.16" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "6.15" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879511&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879508&type=", "width": "77.69583130", "height": "70.99497986", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "在器件的工作过程中，TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "电极的高载流子注入能力至关重要。样品放入压片机后形成直径为1 cm的圆片并测得厚度，随后放入霍尔效应测试仪（探针深度5 nm）进行测试，结果如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。经过不同功率的等离子处理，载流子浓度（" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "）和迁移率（" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "）均得到有效提升，特别是载流子迁移率有大约两到三倍的提升。载流子浓度和迁移率的增加可能与缺陷和空隙率的降低有关，等离子处理能够降低材料表面的缺陷，进而提升载流子浓度和迁移率，导致薄层电阻降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。上述效应将提高TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "与有机层之间的空穴注入效率，加速载流子向后续有机层的迁移，通过提高电荷传输能力最终促进OLED的电荷在发射层中复合以提高发光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } } ], "rid": [ "R26", "R27", "R28", "R29" ], "text": "26-29", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　XPS分析" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "为了深入研究等离子处理调制TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面电子状态及最终对发光性能的影响，选择通过X射线光电子能谱研究薄膜C1s、O1s、N1s和Ti2p的电子结构特性，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。与未经O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜相比，O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "处理后的C1s和O1s结合能没有发生明显变化，N1s结合能向低结合能方向偏移表明元素得到电子，而Ti2p结合能向高结合能方向偏移表明元素失去电子，这可能是由于Ti元素上的电子转移到N元素上面，致使N元素价态进一步减小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同功率O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜的XPS谱图。（a）C1s；（b）O1s；（c）N1s；（d）Ti2p。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "XPS spectra of TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " films treated with different power O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " plasma. （a）C1s. （b）O1s. （c）N1s. （d）Ti2p." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879515&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879526&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879521&type=", "width": "141.04165649", "height": "109.85314941", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步分析等离子处理对薄膜的影响，分别对不同处理条件下N1s和Ti2p进行分峰拟合，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中可以看出，未经等离子处理的薄膜显示396.8 eV（N1）、399 eV（N2）和402 eV（N3），其中N1为TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的N1s能级，N2为TiO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的N1s能级，N3为N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的N1s能级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；而经过O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的薄膜显示出396.5 eV（N1）、397.2 eV（N2）,399 eV（N3）和402 eV（N4），其中N1、N2都为TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的N1s能级，N3为TiO" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的N1s能级，N4为吸附N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的N1s能级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } } ], "rid": [ "R32", "R33" ], "text": "32-33", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着等离子处理功率的增加，402 eV峰值强度随之增大，这导致氮化钛中更高的Ti/N比，从而导致载流子迁移率增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同功率O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理条件下TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜中N元素不同价态结合能。（a）未经等离子处理；（b）20 W；（c）60 W；（d）150 W。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "XPS spectra in the binding energies of different valence states of N element in TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " films for different power O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " treatment condition. （a）None（untreated）. （b）20 W. （c）60 W. （d）150 W." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879532&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879540&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879536&type=", "width": "134.63165283", "height": "94.20053864", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同功率O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理条件下TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜中Ti元素不同价态结合能。（a）未经等离子处理；（b）20 W；（c）60 W；（d）150 W。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "XPS spectra in the binding energies of different valence states of Ti element in TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " films for different power O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " treatment condition. （a）None（untreated）. （b）20 W. （c）60 W. （d）150 W." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879544&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879550&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879547&type=", "width": "136.41723633", "height": "95.61218262", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中可以看出，对于Ti2p，未经等离子处理的器件显示出455 eV（Ti1）、457 eV（Ti2）和462 eV（Ti3），其中Ti1、Ti2分别是TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "、Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的Ti2p 3/2能级，Ti3是TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的Ti2p 1/2能级；而经过O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的薄膜显示出455.4 eV（Ti1）、457.5 eV（Ti2）、460.8 eV（Ti3）和463 eV（Ti4），其中Ti1、Ti2分别是TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "、Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的Ti2p 3/2能级，Ti3、Ti4分别是TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "、TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的Ti2p 1/2能级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Ti价态出现一定程度的增强，峰位移伴随着峰强度的变化，可能是由于TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "中电子的转移、氧掺入和其他亚结构造成的，使Ti的结合能增强，有助于形成稳定化学计量的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } } ], "rid": [ "R35", "R36" ], "text": "35-36", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示，随着等离子处理功率的增加，Ti/N比增加，当O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理功率达到60 W时，Ti/N接近于1，此时电阻率最低，载流子迁移率最高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同功率下等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜的Ti/N比值。（a）O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理；（b）N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Ti/N ratios of TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " films after different plasma treatments with varied power. （a）O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ". （b）N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879553&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879563&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879559&type=", "width": "126.12080383", "height": "46.47654724", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的TiN" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "薄膜显示出与O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理类似的变化，从图S1中可以看出，处理后的C1s和O1s结合能也未发生明显变化，N1s向低结合能偏移，而Ti2p向高结合能偏移。图S2、S3为不同条件下N1s和Ti2p分峰拟合图。经过N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的薄膜N1s显示出396.5 eV（N1）、397.2 eV（N2）、399.5 eV（N3）和402.5 eV（N4），Ti2p显示出455.4 eV（Ti1）、457.5 eV（Ti2）、460.8 eV（Ti3）和463.5 eV（Ti4），说明N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理对N元素的偏移量相较于O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理较低，而Ti元素偏移量较大。这可能是由于N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理导致TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "中N元素含量的变化，减少了表面氧化物，并减少了TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜表面杂质和缺陷，同样也提高了Ti/N比值，形成更多稳定化学计量的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "，最终提高了TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "载流子迁移率电学方面的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　反射率变化" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "顶发射OLED器件的底部阳极反射率越高，器件发光性能越好" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } } ], "rid": [ "R37", "R38" ], "text": "37-38", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。我们研究了不同功率等离子处理对TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "阳极金属层的光反射性能的影响机制，" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）、（b）分别显示了O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理后的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "金属层在可见光范围内的光学发射率。经O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理后，TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "阳极反射率呈现上升趋势且功率为60 W时达到峰值，当功率超过60 W后反射率逐渐下降；N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理结果类似，反射率峰值出现在功率为80 W。TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的反射率可能与元素组成和晶体大小以及完整性有关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而在本实验中，经过一定的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理，反射率的变化与Ti、N元素组成的变化可能性较大，特别是Ti/N比的升高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } } ], "rid": [ "R40", "R41" ], "text": "40-41", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当Ti/N升高时，TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "含量增大, Ti与N充分反应进而反射率增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同功率下等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面反射率特性。（a）O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理；（b）N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Reflectance of TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " after different plasma treatments with varied power. （a）O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ". （b）N" }, { "name": "sub", "data": [ { "name": "text", "data": "2." } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879566&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879572&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879569&type=", "width": "126.99786377", "height": "47.30981445", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　器件发光性能" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（a）、（b）分别展示了不同功率O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "基底的器件电压-亮度和电压-电流密度特性曲线。功函数常用于解释器件开启电压的变化，但从" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（a）中可以看出，经表面等离子处理后开启电压无明显变化，说明在本实验中功函数调制并未对器件的开启电压造成明显影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在器件亮度和电流密度特性方面，加载电压为10 V时，未经等离子处理的器件亮度为3 807 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，电流密度为0.21 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "；而60 W的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的器件亮度达到了6 546 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，电流密度为0.32 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，亮度和电流密度分别提高70%和52%。该结果可归因于器件的电子-空穴平衡，在60 W的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "阳极的器件中，发射层（EML）复合区的空穴比电子更多，因为该处理条件下能有效地将空穴从阳极注入到有机层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（c）中可以看出，在给定的2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "恒定亮度下，60 W的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的器件电流效率和功率效率为2.55 cd/A和1.01 lm/W，相较于未处理的器件（1.99 cd/A和0.71 lm/W）分别提高了28%和41%。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同功率O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "制成的器件特性。（a）电压-亮度；（b）电压-电流密度；（c）2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "恒定亮度下，不同功率与电流效率及功率效率；（d）归一化EL 光谱（插图：发光器件实物图）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Characteristics of the devices made with TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " treated by different power O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " plasmas. （a）" }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": ". （b）" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": ". （c）Under 2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "， current efficiency and power efficiency " }, { "name": "italic", "data": [ { "name": "text", "data": "vs" } ] }, { "name": "text", "data": ". power curves of devices. （d）Normalized EL spectra（inset： device luminance actual picture）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879573&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879580&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879576&type=", "width": "131.68817139", "height": "95.49084473", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "OLED的性能受有机层和电极电荷传输特性以及TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面成膜性能的影响较为明显，两种材料之间良好的电接触有望增强通过界面的电荷载流子注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } } ], "rid": [ "R44", "R45" ], "text": "44-45", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从上述分析表征及" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（c）可以看出，60 W的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理使器件的电流及功率效率最高，说明O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理提高载流子迁移率是有效的，空穴和电子复合效率提高，两者之间的平衡得到改善，使OLED器件的性能得到提高。在OLED器件当中，空穴的迁移率大于电子的迁移率，电子-空穴复合区域靠近阴极，导致电荷载流子分布发生了变化，由于载流子浓度增加以致形成更多的激子，最终导致发光效率提升" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（d）显示了器件在1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "处的归一化电致发光（EL）光谱，对于不同功率的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面，每个器件的EL发射峰和半峰全宽（FWHM）几乎没有差别，表明等离子处理对表面形态没有产生明显的影响。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理也显示出类似的发光性能变化。如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "所示，80 W的等离子处理显示出最佳的OLED性能。从图中可以发现，当加载电压为10 V时，亮度达到了8 700 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，电流密度为0.38 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，在给定的 2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "恒定亮度下，器件的电流效率和功率效率为2.55 cd/A和1.05 lm/W，相较于未处理的器件性能都有明显提高。根据以上结果，N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "处理与O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "处理得到的OLED性能变化类似，虽然功函数和粗糙度在大多数情况下对OLED性能影响尤为重要，但在本实验中，功函数和粗糙度的变化对器件的性能并未产生明显的影响，而载流子的变化在本实验中有着决定性作用。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "不同功率N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理的TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "制成的器件特性。（a）电压-亮度；（b）电压-电流密度；（c）2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "恒定亮度下,不同功率与电流效率及功率效率；（d）归一化EL 光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Characteristics of the devices made with TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " treated by different power N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " plasmas. （a）" }, { "name": "italic", "data": [ { "name": "text", "data": "L-V" } ] }, { "name": "text", "data": ". （b）" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": ". （c）Under 2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ", current efficiency and power efficiency " }, { "name": "italic", "data": [ { "name": "text", "data": "vs" } ] }, { "name": "text", "data": ". power curves of devices. （d）Normalized EL spectra." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879582&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879590&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35879586&type=", "width": "133.53598022", "height": "96.64207458", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了不同功率的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子处理对TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "特性和OLED器件性能的影响。通过对TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面的功函数、粗糙度、载流子浓度及迁移率、反射率系统分析，TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的参数随着不同功率的等离子处理表现出较大差异，从而导致OLED器件性能的变化。其中TiN" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的功函数和粗糙度对器件的性能并未产生显著的影响，而载流子的浓度和迁移率变化起着关键性作用，结果表明60 W的O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子和80 W的N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等离子对OLED性能提高最为显著。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文补充文件及专家审稿意见和作者回复信下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10. 37188/CJL.20220046." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220046." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LEE H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "CHO H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BYUN C W" 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