Research Progress of High-speed 1 550 nm Vertical Cavity Surface Emitting Laser Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高速1 550 nm垂直腔面发射激光器研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Research Progress of High-speed 1 550 nm Vertical Cavity Surface Emitting Laser" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "韩", "givenname": "赛一", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAN", "givenname": "Sai-yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "韩赛一(1997-)，男，河南平顶山人，硕士研究生，2020年于吉林大学获得学士学位，主要从事垂直腔面发射激光器的研究。E-mail: hansaiyi@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28019981&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28019992&type=", "big": 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"givenname": "Li-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "BIMBERG", "givenname": "Dieter", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BIMBERG", "givenname": "Dieter", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "充", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Chong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff5", "text": "5" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学院长春光学精密机械与物理研究所　Bimberg中德绿色光子学研究中心，吉林　长春　130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所　Bimberg中德绿色光子学研究中心，吉林　长春　130033" } ] }, { "lang": "en", "label": "1", "text": "Bimberg Sino-German Green Photonics Research Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China", "data": [ { "name": "text", "data": "Bimberg Sino-German Green Photonics Research Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学，北京　100049", "data": [ { "name": "text", "data": "中国科学院大学，北京　100049" } ] }, { "lang": "en", "label": "2", "text": "University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "中国科学院长春光学精密机械与物理研究所　发光学及应用国家重点实验室，吉林　长春　130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所　发光学及应用国家重点实验室，吉林　长春　130033" } ] }, { "lang": "en", "label": "3", "text": "State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "柏林工业大学　固体物理研究所，纳米光学中心，德国　柏林　D-10623", "data": [ { "name": "text", "data": "柏林工业大学　固体物理研究所，纳米光学中心，德国　柏林　D-10623" } ] }, { "lang": "en", "label": "4", "text": "Center for Nano-Optics, Institute of Solid State Physics, Technical University of Berlin, Berlin D-10623, Germany", "data": [ { "name": "text", "data": "Center for Nano-Optics, Institute of Solid State Physics, Technical University of Berlin, Berlin D-10623, Germany" } ] } ] }, { "id": "aff5", "intro": [ { "lang": "zh", "label": "5", "text": "空军装备部驻长春地区军事代表室，吉林　长春　130033", "data": [ { "name": "text", "data": "空军装备部驻长春地区军事代表室，吉林　长春　130033" } ] }, { "lang": "en", "label": "5", "text": "Military Representative Office in Changchun of the Air Force Equipment Department, Changchun 130033, China", "data": [ { "name": "text", "data": "Military Representative Office in Changchun of the Air Force Equipment Department, Changchun 130033, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "垂直腔面发射激光器（VCSEL）具有生产成本低、调制速率高等优点，在光通信领域占有重要地位。随着数据需求量的飞速增长，在长距离信息传输中，具有低损耗的1 550 nm 波长的VCSEL引起了研究人员的兴趣。本文首先介绍了1 550 nm VCSEL的结构，然后讨论了其带宽限制因素以及相应的改进方法，接着从NRZ（不归零）调制和PAM4（四电平脉冲幅度）调制两方面对近年来高速1 550 nm VCSEL的研究进展进行了综述，最后展望了高速1 550 nm VCSEL在未来光通信领域的发展和应用。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Vertical cavity surface emitting laser(VCSEL) has the advantages of low production cost and high modulation rate, and plays an important role in the field of optical communication. With the rapid growth of data demand, the 1 550 nm wavelength VCSEL with low loss has aroused the interest of researchers in long-distance information transmission. In this paper, the structure of 1 550 nm VCSEL is introduced firstly, the bandwidth limitation factors and corresponding improvement methods are then discussed, and then the research progress of high-speed 1 550 nm VCSEL in recent years is reviewed from the aspects of NRZ(Non-zero) modulation and PAM4(Four-level pulse amplitude) modulation. Finally the development and application of high-speed 1 550 nm VCSEL in the field of optical communication in the future are prospected." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "1 550 nm" } ], [ { "name": "text", "data": "高速垂直腔面发射激光器(VCSEL)" } ], [ { "name": "text", "data": "不归零调制(NRZ)" } ], [ { "name": "text", "data": "四电平脉冲幅度调制(PAM4)" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "1 550 nm" } ], [ { "name": "text", "data": "high-speed vertical cavity surface emitting laser(VCSEL)" } ], [ { "name": "text", "data": "non-return to zero modulation(NRZ)" } ], [ { "name": "text", "data": "four-level pulse amplitude modulation(PAM4)" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "随着5G时代的到来，高速数据通信、大数据量和低功耗绿色通信成为通信领域的目标。为满足互联网、高清电视、云计算机、工业、机构以及家庭的固定和移动终端对宽带需求的不断增长，光互连在高速数据传输领域得到广泛的应用。作为光通信系统的光源需要有以下特性：足够的输出功率、好的温度稳定性、与光纤的耦合效率高、调制特性好、可靠性高、寿命长、尺寸紧凑质量小等。而垂直腔面发射激光器(VCSEL)由于腔长很短而具有高调制速率，且VCSEL输出的光斑为圆形光斑因而与光纤的耦合特性很好。此外，VCSEL还具有能耗低、生产成本低等优点，非常适合作为光通信领域的光源。目前，基于GaAs基材料的短波850 nm VCSEL的制备技术已经很成熟，传输速率超过100 Gb/s的850 nm VCSEL器件相继被报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ",850 nm VCSEL也已经成为数据中心内部短距离光模块的核心光芯片。但在基于短波长如850 nm VCSEL的光通信系统中，信息的传输距离被模态色散限制在数百米" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与之相比，符合光纤低损耗窗口的长波长VCSEL能实现长距离的信息传输。目前常用的长波长波段为具有低色散特性但损耗较高的1 310 nm波段和具有低损耗特性但色散较大的1 550 nm波段，为了解决模态色散的限制，目前长距离光通信系统已转向单模光源与单模光纤的组合。在相同的光纤长度下，1 550 nm VCSEL在光纤上的传输损耗约为850 nm VCSEL在光纤上传输损耗的1/10左右，因此更加适合长距离传输，本文也主要论述高速1 550 nm 波段VCSEL的相关研究进展。目前1 550 nm VCSEL的制备工艺仍不完善，基于InP基的具有高折射率和高热导率的分布式布拉格反射镜(DBR)难以制备、长波长VCSEL的热问题较为显著以及1 550 nm VCSEL的有效电流限制结构很难形成" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此在长距离数据传输中，量子阱(QW)激光器和分布反馈(DFB)激光器仍是主要的光源。但随着研究不断增多，1 550 nm VCSEL的高速性能进一步优化。此外，先进的调制方式如PAM4调制，以及各种电子技术如均衡、前向纠错(FEC)、预加重等被应用于数据传输过程中，进一步提高了VCSEL的传输速率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文首先介绍了1 550 nm VCSEL的器件结构以及一些器件的改进方法，接着从传递函数出发讨论了VCSEL的带宽限制因素以及相应的解决方法，然后综述了近年来在改善器件结构和应用PAM4调制格式以及相应的电子技术来提高1 550 nm VCSEL传输速率方面的研究进展，最后对高速1 550 nm VCSEL未来的发展趋势进行了展望。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "高速1 550 nm VCSEL器件结构" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "VCSEL通常由上、下DBR和有源区构成。DBR一般由两种折射率差较大的材料组成，为了在μm量级的VCSEL腔内实现激射，DBR的反射率一般大于99%。VCSEL常用量子阱结构作为有源区，可以很有效地将载流子和光子限制在有源区中，减少泄露。不同于完善的850 nm VCSEL制备工艺，目前1 550 nm VCSEL的研究多在于器件结构的优化，主要是高折射率、高热导率的DBR的制备、热问题的解决以及有效的电流限制结构的形成。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "1 550 nm VCSEL对应的DBR材料为四元系材料，InGaAsP/InP、AlGaInAs/InP等四元系材料的折射率差很小，因此需要更多的DBR对才能实现超高的反射率，这增大了VCSEL的有效尺寸。而折射率差大、反射性能好的AlGaAsSb/AlAsSb DBR外延难度大，难以制备。此外，四元系材料的导热性能很差，更多的DBR对使得VCSEL的热问题更加严重。虽然介质材料仅用几对DBR就可实现高折射率，但介质材料不能导电，因此需要配上更加复杂的工艺。为解决这一难题，晶圆熔合(Wafer-fusion,WF)技术得到了广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在InP衬底上生长有源区，在GaAs衬底上生长热性能好的DBR，如GaAs/AlGaAs材料的 DBR，然后通过晶圆熔合技术将它们结合在一起，从而获得腔长较短、散热性能较好的1 550 nm VCSEL。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "相对于电子来说，空穴的相对质量大，迁移率低，因此p区材料的串联电阻必然会大于n区材料的电阻，从而产生更多热量。为解决这一难题，掩埋隧道结(BTJ)得到了应用。BTJ结构可以选择性刻蚀孔径外的高掺杂n++和p++型层，然后在二次外延生长时用轻掺杂n型材料覆盖剩余的p型层来实现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这一方法很大程度上减小了p区的热效应。此外，通过晶圆熔合技术制备的1 550 nm VCSEL具有散热性能优异的DBR，对解决器件的热问题也有帮助。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为限制注入的电流，VCSEL常采用各种电流限制结构，如氧化限制型、离子注入型、掩埋异质结型等结构，其中氧化限制型结构是VCSEL最常用的电流限制结构。选择高Al含量的材料，通过氧化工艺形成低折射率的绝缘氧化物区域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而可以实现对光和电的限制。但对于1 550 nm VCSEL来说，InP衬底上含Al材料的氧化温度比较高、氧化速率比较低以及氧化选择性比较差，因而采用氧化限制型结构难以实现好的电流限制作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而二次外延BTJ结构可以在BTJ区域外形成一个阻塞的pn结层，而在BTJ区域内，由于隧道效应，p++n++结具有较低的电阻" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此电流被限制在重掺杂区，从而实现对电流的限制，但需要对BTJ采用光刻、刻蚀形成电流限制孔径图形，再二次外延生长完成整个VCSEL结构，工艺较为复杂。有研究组采用侧向腐蚀隧道结的方法来限制电流，虽然工艺上容易实现，但存在一定的不确定因素" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，通过BTJ结构来进行侧向限制是制备1 550 nm VCSEL时最常用的方法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "制备1 550 nm VCSEL通常采用以下两种方法：一种方法是通过晶圆熔合技术将GaAs基DBR和InP基有源区结合起来，通过这种方法可以在大的BTJ孔径下制备单模且散热性能良好的短腔1 550 nm VCSEL。Blokhin等通过这种方法制备了BTJ孔径为8 μm的单模1 550 nm VCSEL，且具有6 mW的高输出功率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另一种方法是直接在InP衬底上生长VCSEL结构，包括有源区和DBR，随后形成BTJ结构。相比于第一种方法，这种方法制备的1 550 nm VCSEL可以达到更高的带宽和传输速率，但只有在BTJ孔径小于5 μm时才能实现单模且输出功率较小，在2 mW 左右。Spiga等采用这种方法设计出了带宽达到21 GHz的1.5 μm VCSEL，但输出功率为2.2 mW" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，两种方法各有优缺点。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为带有BTJ结构的高速1 550 nm VCSEL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "InP基BTJ结构的1 550 nm高速VCSEL结构图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Structure diagram of 1 550 nm high-speed VCSEL for InP-based BTJ structure" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020004&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020020&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020007&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "高速VCSEL带宽限制因素" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "要制备具有高调制带宽的高速VCSEL，首先要了解限制VCSEL调制带宽的因素。VCSEL的小信号调制特性的理论基础为传递函数，公式(1)为常用的VCSEL传递函数表达式：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020009&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020011&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020024&type=" } } } ], "id": "DF1" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "是弛豫振荡频率，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "是寄生截止频率，" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "是阻尼因子，" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "为常数。从公式(1)中可以看出，调制带宽的大小与" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "这三个参数有关。要想增大调制带宽，需要增大" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "、减小" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "。下面我们将分析如何调整这三个参数的值。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "阻尼限制" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "阻尼因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "也称为内部限制因子，可表示为" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020026&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020031&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020044&type=" } } } ], "id": "DF2" } }, { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为阻尼补偿因子。" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "text", "data": "因子可用如下公式表示：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020046&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020035&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020037&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "为光子寿命，" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "为增益压缩因子，" }, { "name": "italic", "data": [ { "name": "text", "data": "χ" } ] }, { "name": "text", "data": "为传输因子，" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "为群速度，∂" }, { "name": "italic", "data": [ { "name": "text", "data": "g/" } ] }, { "name": "text", "data": "∂" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "是微分增益。要减小阻尼因子" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "，需要减小" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "text", "data": "因子，而这可以通过刻蚀或氮化硅沉积调制顶部DBR减小光子寿命以及应用压缩应变量子阱增大微分增益等方法来实现。Blokhin等通过沉积SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Ta" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "改变顶部DBR的反射率来改变光子寿命，经过测试，1 550 nm VCSEL的带宽从9.2 GHz增加到11.5 GHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";Babichev等通过顶部DBR的蚀刻增加了镜面损耗，减少了光子寿命，成功地将调制带宽从7 GHz增加到9 GHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但通过" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "的表达式可以看出，随着" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "的减小，" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "也会减小，因此" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "的值并非越小越好。应找到一个折中的值，使得VCSEL的调制带宽达到最大。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "热限制" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "弛豫振荡频率" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "是一个温度相关的参数，也称为热限制。当VCSEL工作时会有热量产生，使得有源区的温度升高，随着注入电流的增大，当温度过高时，有源区会出现载流子泄露，使得" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "减小。因此，热限制是制约高速VCSEL带宽的一个重要因素。" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "是激光腔内载流子和光子之间的本征振荡频率，其通过激光腔中的受激发射相互作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可用下式表示：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020049&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020040&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020041&type=" } } } ], "id": "DF4" } }, { "name": "text", "data": "其中" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020053&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020054&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020059&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "为内量子效率，" }, { "name": "italic", "data": [ { "name": "text", "data": "Γ" } ] }, { "name": "text", "data": "为光学限制因子，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "为阈值电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "为有源区体积。" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "因子代表了弛豫振荡频率随电流变化的关系，可通过增大" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "因子来增大弛豫振荡频率。从" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "因子的表达式中可以看出，增大" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "因子的方法有：(1)采用短腔或半波长腔来提高光学限制因子" }, { "name": "italic", "data": [ { "name": "text", "data": "Γ" } ] }, { "name": "text", "data": "。Müller等使用介质DBR来缩短有效腔长，并结合其他优化技术制备了带宽为17 GHz的1 550 nm VCSEL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";Spiga等制备了一种腔长为1.5" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "的1.5 μm短腔VCSEL，调制带宽达到了22 GHz，也是当时长波长VCSEL的最大带宽" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。(2)减小有源区体积" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "，但太小的有源区难以完全限制光子和载流子。(3)增大微分增益，一般通过多对应变量子阱来实现。Müller、Spiga和Karinou等制备的器件中都采用了这一结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R14", "R15", "R16" ], "text": "14-16", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。目前在制备高速VCSEL时，用来增大微分增益的压缩应变量子阱已经成为基本结构之一。以上这些方法都在一定程度上缓解了1 550 nm VCSEL的热限制。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "寄生限制" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "VCSEL的寄生效应是影响器件调制带宽的另一个重要因素，包括寄生电容和寄生电阻，它们会影响注入电流进入有源区，从而限制VCSEL的高速调制性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一般将VCSEL的寄生效应产生的影响等效为一阶低通滤波器，而" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "就是一阶低通滤波器的截止频率。要消除器件中的寄生效应需要尽可能地减小VCSEL器件中的电容和电阻，如改变DBR的掺杂分布将吸收损耗降到最小来减小电阻" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，或通过缓变结降低异质结处的势垒尖峰和改善势垒形状从而减小电阻。苯并环丁烯(BCB)是一种新型的活性树脂，具有低介电常数、高热导率和优异的电绝缘性能，因此常用BCB平坦化技术来减小寄生电容。Kanakis等将VCSEL完全封装在BCB中，减少了寄生效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于氧化限制型VCSEL，研究发现薄氧化层引起的寄生电容大于厚氧化限制层引起的寄生电容，此外采用多个氧化层的方法也可以降低电学寄生效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而对于BTJ结构来说，在制备BTJ结构进行二次生长时降低掺杂浓度，可以减小高掺杂p+n+区的寄生电容，从而减小寄生效应的影响。Müller等采用这种方法制备了调制带宽达到17 GHz的1 550 nm VCSEL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "高速1 550 nm VCSEL研究进展" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "随着研究的发展，1 550 nm高速VCSEL的器件结构不断完善，传输速率也在不断提升。但受制于热效应和寄生效应，通过改善器件结构来提升VCSEL 传输速率的方法有一定的上限。因此，为了实现更高速率的传输，在传输链路中使用更加先进、有效的调制格式来代替传统的调制格式将成为必然。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "传统的 VCSEL 调制一般使用 NRZ 调制格式，它采用高、低两种信号电平来表示所要传输的数字逻辑信号0和1，每个符号能够传输 1 bit 的逻辑信息，具有简单易操作和可靠等特性。考虑到技术和设备的复杂性，在不降低数据速率下降低波特率的最简单且具有最低实现复杂性的方法是四脉冲幅度调制(PAM4)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。PAM4 信号采用 4 个不同的信号电平(00)、(01)、(10)、(11)来进行信号传输，因此每个符号上能传输的信息增加为2 bit。这代表着在与NRZ调制相同的符号率下，PAM4调制在理论上可以提高一倍的传输速率，因此对链路的带宽需求大大降低。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "PAM4调制提高传输速率的同时会引起误码率(BER)劣化的问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Karinou等在实验中比较了在不同光纤长度下，对1 550 nm VCSEL分别进行传输速率为10.9 Gbps 的NRZ调制和10 Gbps 的PAM4调制时器件的性能，结果如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从图中可以看出，在相同功率和相同速率下使用PAM4调制时的误码率高于使用NRZ调制时的误码率。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同光纤长度下使用PAM4调制与NRZ调制时的BER-P曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "BER-P curve when using PAM4 modulation and NRZ modulation under different fiber lengths" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020056&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020073&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020061&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了解决这一问题，PAM4 链路之中常会使用均衡或前向纠错等电子技术。均衡技术常通过滤波器来实现，根据信号经过时的被衰减的情况，将信号的高频成分适当增强，信号的高、低频成分因此被“均衡”到同一个水平，从而减少码间干扰的影响。最常用的均衡技术为前反馈均衡(FFE)，具有降低频率啁啾从而使频谱变窄的有益效果。前向纠错(FEC)是指信号在被送入传输信道之前预先按一定的算法进行编码处理，加入带有信号本身特征的冗码，在接收端按照相应算法对接收到的信号进行解码，从而找出在传输过程中产生的错误码并将其纠正的技术。由于增加了一些额外的冗码，前向纠错技术要付出一定的带宽代价，但可以获得很大的误码率改善" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了均衡和前向纠错技术外，波分复用(WDM)也是光通信系统中常用的技术。WDM技术在光纤通信中占有非常重要的地位。它能够在一根光纤上传输不同波长的多个光信号，从而使通信容量随着可重复使用的波长的数量呈指数级增长。根据信道间隔的不同，WDM可分为粗波分复用(CWDM信道间隔小于50 nm)、密集波分复用(DWDM信道间隔小于等于1 000 GHz)、超密集波分复用(SDWDM信道间隔小于等于25 GHz)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "下面从NRZ调制和PAM4调制两方面对近年来高速1 550 nm VCSEL的研究进展进行综述。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4.1" } ], "title": [ { "name": "text", "data": "基于NRZ调制的1 550 nm VCSEL传输速率" } ], "level": "2", "id": "s4a" } }, { "name": "p", "data": [ { "name": "text", "data": "2010年，Müller等制备了具有BTJ结构的1 550 nm短腔VCSEL。他们使用压缩应变量子阱提高微分增益，用电介质顶部DBR和混合底部DBR代替半导体DBR减短腔长和光子寿命提高弛豫振荡频率，并在二次生长时降低掺杂浓度，使高掺杂p+n+区的寄生电容大大降低，减小寄生效应的影响，制备的VCSEL调制带宽达到了17 GHz，并在55 ℃下实现了25 Gbps的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2011年，他们进一步优化器件，制备了微分量子效率高达40%、热阻低至1.6 K/mW的1 550 nm高速VCSEL，小信号调制带宽超过17 GHz。室温下，在背对背(BTB)时的数据传输速率为35 Gbps，在4.2 km的单模光纤上传输速率可达25 Gbps" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2015年，Malacarne等采用BTJ结构减少热的产生，使用介质DBR代替半导体DBR减短腔长，并优化外延结构、台面尺寸和键合衬垫等以最小化寄生电容，从而制备了调制带宽为18 GHz的1 550 nm VCSEL。在NRZ调制下，在1 km的单模光纤上实现了高达40 Gbps数据速率下的无错误操作(误码率" }, { "name": "text", "data": "<" }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "-9" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，Karinou等采用BTJ结构并在二次生长时用n型材料代替p型材料成功制备了1 550 nm VCSEL，器件的3 dB带宽达到了18 GHz。在使用均衡技术的情况下，最终在10 km的单模光纤(SMF)上实现了28 Gbps的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，Kuchta等使用BTJ结构、BCB平坦化技术和介质DBR等优化了器件的电、热性能以及腔长，制备了一个1 530 nm的VCSEL，器件的带宽达到了18 GHz。在使用前反馈均衡(FFE)进行预补偿时，该VCSEL可以BTB情况下进行56 Gbps的速率传输并在2 km的SMF 上实现50 Gbps的无误码传输。这是当时1 550 nm波段VCSEL所演示的最高数据速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，Spiga等设计制备了一种腔长为1.5" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "的1.5 μm短腔VCSEL，这是当时InP 基VCSEL中最短的半导体腔。在室温下，该VCSEL的小信号调制带宽超过21 GHz，通过NRZ调制在BTB条件下实现了速率高达50 Gbps的数据传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，Babichev等基于分子束外延(MBE)生长了高性能的InP基的有源区和热导性优异的GaAs基DBR，并通过晶圆熔合技术将它们熔合在一起制备了具有8 μm BTJ孔径的单模1 550 nm VCSEL。通过顶部DBR的蚀刻增加了镜面损耗，减小了光子寿命和阻尼，并将调制带宽增加到9 GHz，在NRZ调制下实现了高达30 Gbps的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年，Blokhin等研究了输出光损耗对WF-VCSEL的影响，通过减小光子寿命增加光损耗，在常温下将1 550 nm VCSEL的带宽从9.2 GHz提高到了11.5 GHz，在85 ℃的高温下器件带宽也能达到8.5 GHz，通过增加光损耗进一步提高了1 550 nm WF-VCSEL的带宽" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。本课题组与 Babichev 团队合作，在1 550 nm高速VCSEL方面也开展了一些工作。我们通过继续优化晶圆熔合技术，制备出了BTJ 孔径为6 μm 的1 550 nm VCSEL，测试结果表明该器件输出功率约为3.4 mW，带宽为13 GHz。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": " 为在常温和BTB条件下测得的1 550 nm VCSEL 的眼图，可以看出该器件在NRZ 调制下实现了高达37 Gbps 的传输速率。在使用晶圆熔合技术制备的1 550 nm VCSEL中，这一结果处于领先地位(Under assessment)。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "1 550 nm VCSEL传输速率为37 Gbit/s时的NRZ眼图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "NRZ eye diagram at a 1 550 nm VCSEL transmission rate of 37 Gbit/s" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020064&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020068&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020066&type=" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "NRZ调制下高速1 550 nm VCSEL的发展" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Development of high-speed 1 550 nm VCSEL under NRZ modulation" } ] } ], "note": [], 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Gbps)的传输速率，为未来波分复用技术进一步应用于光通信领域实现更高传输速率提供了可能性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2015年，Karinou等对带宽为18 GHz的1 530 nm VCSEL(BTJ结构)进行PAM4调制，在7%硬判决前向纠错与均衡技术的综合运用下，在2 km的光纤上实现了56 Gbps的传输速率。这是当时使用长波长VCSEL(PAM4)实现的最大传输距离和每波长的最大数据速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，Eiselt等对基于BTJ设计的1 525 nm VCSEL进行PAM4调制，器件的带宽为18 GHz，在使用简单的均衡技术进行均衡下，实现了在15 km的SSMF上56 Gbps和1 km 的SSMF上84 Gbps的传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，该研究组优化器件结构，将VCSEL的调制带宽提升至20 GHz，通过使用不同的均衡方式，最终在1.6 km的SSMF上演示了84 Gbps的速率传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2018 年，Isoe 等通过PAM4 调制技术，将两个10 Gbps的OOK 数据流差分调制到单个 VCSEL 上，因此产生20 Gbps 的OOK 信号聚合数据速率，在8 GHz 带宽的 VCSEL 上实现在 24.7 km 范围内20 Gbps 的无误差传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，Isoe 团队利用 PAM4 调制技术、密集波分复用(DWDM)和拉曼放大技术，实现了60 Gbps 的数据传输速率。他们将3 个10 G 级别的 VCSEL 通道用20 Gbps 的 PAM4 数据信号直接调制，然后这些通道通过DWDM 技术以0.4 nm 的间距汇聚到单个光纤链路上，总聚合数据速率达到60(3×20) Gbps。利用正向拉曼泵浦的8.6 dB 平坦增益，实验实现了77.12 km 的标准单模光纤传输。在当时，这是基于PAM4 调制的VCSEL 的传输速率达到60 Gbps 报告的最长无错误光纤传输距离" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年，Kanakis等基于双台地短腔设计制备出了单偏振、单模1.5 μm VCSEL。该器件通过BCB包裹双台面VCSEL减少寄生限制，结合介质DBR减短腔长以及优化BTJ外反偏结的掺杂浓度等方法，将调制带宽提高到了20.6 GHz。在500 m单模光纤上使用PAM4调制实现了80 Gbps的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "PAM4调制下高速1 550 nm VCSEL的发展" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 2" } ], "title": [ { 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VCSEL常采用BTJ结构。而晶圆熔合技术的应用解决了高折射率差、高热导率的长波长VCSEL的DBR难以制备的问题，然而通过这种技术制备出的器件的高速性能不如直接在InP基上生长的器件的高速性能好，但却具有更高的输出光功率。早期，研究人员通过优化器件结构来提高1 550 nm高速VCSEL的带宽，并在NRZ调制下进行信息数据传输。但随着器件的带宽难以再明显提升，采用更为先进的PAM4调制成为提高VCSEL传输速率的必然选择。PAM4调制在相同的VCSEL带宽下，传输速率可以比NRZ调制下提高近一倍，大大降低了对带宽的需求。虽然目前1 550 nm VCSEL制备工艺仍不成熟，但随着研究的进一步发展，通过改进器件结构和使用更加先进的调制格式，1 550 nm高速VCSEL的带宽和传输速率将进一步提高。可以预见，面对数据需求量的爆炸性增长，1 550 nm VCSEL将会在长距离光通信中起到重要作用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220048." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LAVRENCIK J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "VARUGHESE S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEDENTSOV N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { 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