Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode Cover Article Enhanced Publication

School of Materials Science and Engineering, Taiyuan University of Technology,Taiyuan,China,030024;Aerospace Science and Technology Defense Technology Research and Experimental Center,Beijing,China,100854;Key Laboratory of Interface Science and Engineering of New Materials, Ministry of Education, Taiyuan University of Technology,Taiyuan,China,030024;College of Textile Engineering, Taiyuan University of Technology,Taiyuan,China,030024;Institute of Atomic and Molecular Science of Materials, Shaanxi University of Science and Technology,Xi'an,China,710021