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1.School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China
2.Aerospace Science and Technology Defense Technology Research and Experimental Center, Beijing 100854, China
3.Key Laboratory of Interface Science and Engineering of New Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
4.College of Textile Engineering, Taiyuan University of Technology, Taiyuan 030024, China
5.Institute of Atomic and Molecular Science of Materials, Shaanxi University of Science and Technology, Xi'an 710021, China
Published:2022-05,
Received:13 January 2022,
Revised:11 February 2022,
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Xiao-juan DU, Jing LIU, Hai-liang DONG, et al. Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode. [J]. Chinese Journal of Luminescence 43(5):773-785(2022)
Xiao-juan DU, Jing LIU, Hai-liang DONG, et al. Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode. [J]. Chinese Journal of Luminescence 43(5):773-785(2022) DOI: 10.37188/CJL.20220016.
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