Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode Enhanced Publication

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"name": "text", "data": "太原理工大学　材料科学与工程学院，山西　太原　030024" } ] }, { "lang": "en", "label": "1", "text": "School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "航天科工防御技术研究试验中心，北京　100854", "data": [ { "name": "text", "data": "航天科工防御技术研究试验中心，北京　100854" } ] }, { "lang": "en", "label": "2", "text": "Aerospace Science and Technology Defense Technology Research and Experimental Center, Beijing 100854, China", "data": [ { "name": "text", "data": "Aerospace Science and Technology Defense Technology Research and Experimental Center, Beijing 100854, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "太原理工大学　新材料界面科学与工程教育部重点实验室，山西　太原　030024", "data": [ { "name": "text", "data": "太原理工大学　新材料界面科学与工程教育部重点实验室，山西　太原　030024" } ] }, { "lang": "en", "label": "3", "text": "Key Laboratory of Interface Science and Engineering of New Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China", "data": [ { "name": "text", "data": "Key Laboratory of Interface Science and Engineering of New Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "太原理工大学　轻纺工程学院，山西　太原　030024", "data": [ { "name": "text", "data": "太原理工大学　轻纺工程学院，山西　太原　030024" } ] }, { "lang": "en", "label": "4", "text": "College of Textile Engineering, Taiyuan University of Technology, Taiyuan 030024, China", "data": [ { "name": "text", "data": "College of Textile Engineering, Taiyuan University of Technology, Taiyuan 030024, China" } ] } ] }, { "id": "aff5", "intro": [ { "lang": "zh", "label": "5", "text": "陕西科技大学　材料原子·分子科学研究所，陕西　西安　710021", "data": [ { "name": "text", "data": "陕西科技大学　材料原子·分子科学研究所，陕西　西安　710021" } ] }, { "lang": "en", "label": "5", "text": "Institute of Atomic and Molecular Science of Materials, Shaanxi University of Science and Technology, Xi'an 710021, China", "data": [ { "name": "text", "data": "Institute of Atomic and Molecular Science of Materials, Shaanxi University of Science and Technology, Xi'an 710021, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "采用SiLENSe（Simulator of light emitters based on nitride semiconductors）软件仿真研究了Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N电子阻挡层（EBL）Al组分渐变方式对GaN基激光二极管（LD）光电性能的影响，实现了提高输出功率和电光转换效率的目的。文中提出的四种Al组分渐变方式分别是传统均匀组分、右阶梯渐变组分（0~0.07~0.16）、三角形渐变组分（0~0.16~0）、左阶梯渐变组分（0.16~0.07~0）。结果表明，与传统均匀组分EBL结构相比，Al组分阶梯渐变Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N EBL LD导带底的电子势垒显著提高，价带顶的空穴势垒降低。这主要是由于该结构能有效抑制电子泄漏和提高空穴注入效率，从而提高有源区载流子浓度，进而提高有源区辐射复合效率。当注入电流为0.48 A时，采用Al组分阶梯渐变Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N EBL结构能将器件开启电压从5.1 V降至4.9 V，光学损耗从3.4 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "降至3.29 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，从而使光输出功率从335 mW提高至352 mW，电光转换效率从12.5%提高至13.4%。此外，讨论了Al组分阶梯渐变EBL结构对GaN基蓝光LD光电性能的影响机制。该结构设计将为外延生长高功率GaN基LD提供实验数据和理论支撑。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The influence of Al composition-graded of Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N electron blocking layer(EBL) on the photoelectric performance of GaN-based laser diode was numerically investigated using SiLENSe(Simulator of light emitters based on nitride semiconductors) software to achieve high output power and high conversion efficiency. The four Al composition graded modes in this paper are traditional uniform composition, right step-graded composition(0-0.07-0.16), triangle-graded composition(0-0.16-0), and left-step graded composition(0.16-0.07-0) respectively. Comparing with the traditional homogeneous composition EBL, it was found that Al composition step-graded EBL not only could significantly enhance band offset of conduction band result in reducing the electron leakage, but also could decrease band offset of valence band in order to improve holes injection efficiency and enhance radiative recombination efficiency. This is mainly due to the fact that Al step-graded composition structure could effectively restrain the electron leakage to the p-side and improve holes injection efficiency, so as to increase the carrier concentration and radiation recombination in the active zone. The Al step-graded composition EBL could effectively reduce opening voltage from 5.1 V to 4.9 V and decrease optical loss from 3.4 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " to 3.29 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ", thus the output power was increased from 335 mW to 352 mW and the conversion efficiency was increased from 12.5% to 13.4% respectively at the current density of 6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ". In addition, the influence mechanism of Al step-graded composition EBL on the photoelectric performances of GaN-based laser diode was discussed. This structure will provide experimental data and theoretical support for the epitaxial growth of high-power GaN-based laser diode." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "GaN基蓝光激光二极管" } ], [ { "name": "text", "data": "电子阻挡层" } ], [ { "name": "text", "data": "Al组分" } ], [ { "name": "text", "data": "光电性能" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "GaN-based blue laser diodes" } ], [ { "name": "text", "data": "electron blocking layer" } ], [ { "name": "text", "data": "Al composition" } ], [ { "name": "text", "data": "photoelectric performance" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "1995年，第一支GaN基激光二极管(Laser diode,LD)问世，就此揭开了GaN基LD的序幕" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近几十年来，由于GaN基LD在激光显示、材料加工、信息存储、激光通讯等领域越来越广泛的应用，逐渐成为激光领域研究的热点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着外延材料的优化和生长技术不断提高，GaN基蓝光LD光电性能有了很大的提升，但是由于蓝光LD外延结构复杂，获得高性能GaN基蓝光LD在技术方面仍然面临着诸多挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，载流子泄漏对GaN基蓝光LD电光转换效率和输出功率有重要影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。极化效应是导致载流子泄漏的关键因素。极化效应由自发极化和压电极化两部分构成。LD结构中由于外延层材料之间晶格常数不同导致较大的压电极化，Ⅲ族氮化物在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面衬底上生长产生自发极化。首先，极化效应产生较强的内建电场，导致电子和空穴波函数分离，降低量子阱中的辐射复合效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；其次，InGaN与GaN之间存在的晶格失配产生大量位错，形成非辐射复合中心，从而导致载流子泄漏" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R7", "R8" ], "text": "7-8", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。由于电子和空穴的迁移速率不同，量子阱中电子和空穴浓度分布不均匀导致有源区非辐射复合效率提高，从而降低了蓝光LD的辐射复合效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R9", "R10", "R11", "R12" ], "text": "9-12", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过调控GaN基蓝光LD的电子阻挡层(EBL)来降低载流子泄漏，从而提高输出功率。诸多研究者提出不同的EBL结构降低极化效应和调控能带弯曲。1996年，Nakamura等将传统AlGaN EBL引入脊形发射LD外延结构中" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并得到了广泛应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R13", "R14", "R15" ], "text": "13-15", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。结果表明，AlGaN EBL结构减少了电子泄漏，提高了内量子效率(Internal quantum efficiency,IQE)。因此，EBL引入为抑制电子泄漏提供了解决思路。然而，随着应用需求提高对LD的输出功率提出了更高的要求，在大电流注入条件下，传统均匀组分AlGaN EBL抑制电子泄漏和促进空穴注入效率还需进一步提升，IQE有待提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这是因为Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N EBL和势垒的界面处带阶较大，导带带阶越大，越有利于阻挡电子，导致界面处积累了大量自由电子，形成极化电场，从而阻止空穴注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；另外，氮化物半导体也会不可避免地形成空穴势垒从而影响空穴注入。2008年，Chen等提出四元Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.144" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.606" } ] }, { "name": "text", "data": "N EBL，与传统Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N EBL相比明显提高了LD的光电性能，这主要是因为采用Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] } ] }, { "name": "text", "data": "N材料降低了极化效应，提高了空穴注入效率和降低了电子泄漏" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2011年，Zhang等提出阶梯渐变的Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N EBL，与传统均匀组分Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.18" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.82" } ] }, { "name": "text", "data": "N相比，阶梯渐变的Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N EBL降低了极化效应，减少了载流子泄漏和光子损耗，从而使阈值电流降至2.5 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",IQE从60%提高到92%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2012年，Morawiec等将Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] } ] }, { "name": "text", "data": "N应用在势垒中，调节InGaN量子阱中的极化效应，从而达到降低载流子泄漏和提高IQE的目的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，Alahyarizadeh等通过实验将AlGaN和AlInGaN EBL LD的光电性能进行了对比分析，结果表明，AlInGaN EBL结构LD的势垒与EBL的导带带阶较高，从而抑制了电子泄漏" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，Lin等提出Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.18" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.47" } ] }, { "name": "text", "data": "N EBL LED，与传统Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "N EBL相比，输出功率提高了31.38%，这是由于调控Al/In比率增加了导带带阶高度，减少了价带带阶高度，从而减少了电子泄漏和增加了空穴注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2018年，Xing等通过优化Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N EBL中的Al组分从而实现了抑制量子阱中载流子泄漏的目的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，通过调控Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N中的Al组分调节带隙范围可以抑制电子泄漏，但是还有待进一步改善。通过调节合金组分，Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N EBL可以调控势垒和EBL之间导带和价带的带阶，但是不能调节导带和价带的带阶比，即无法在提高导带带阶高度的同时降低价带带阶高度，从而实现更好抑制电子泄漏和提高空穴注入的目的。2021年，He等提出了p-AlInGaN/AlGaN超晶格EBL，降低了能带弯曲效应，减少了电子泄漏，提高了空穴注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过以上分析可知严重的电子泄漏和低的空穴注入效率导致IQE降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N被认为是最具有发展潜力的EBL材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } } ], "rid": [ "R26", "R27", "R28" ], "text": "26-28", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。调控四元Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N中Al/In的比率，相比Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N材料带隙，其调节范围更大，调节Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N与量子阱的晶格匹配，可降低极化效应，从而提高空穴注入效率。因此，Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] } ] }, { "name": "text", "data": "N EBL结构不仅能够降低电子泄漏，而且还能提高空穴注入效率，从而提高IQE。因此，将四元Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N材料应用在GaN基LD的EBL中，并对Al组分渐变方式进行优化能够降低极化效应，增加带隙，从而提高阻挡电子泄漏的导带势垒高度和降低空穴注入的价带势垒高度，实现抑制电子泄漏和提高空穴注入的目的。优化四元化合物Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N的Al组分渐变方式是提高LD性能的重要方法之一。然而，四元化合物AlInGaN由于其生长窗口小和制作难度大，制备高质量AlInGaN晶体成为一大难题。这是因为AlN、GaN和InN之间互溶性差，所以采用金属有机化学气相沉积生长高质量四元AlGaInN比生长GaN和InGaN更困难" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文采用SiLENSe计算模拟软件对四元Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] } ] }, { "name": "text", "data": "N EBL中Al组分渐变方式进行优化。其中一种为传统均匀组分Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.16" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "N EBL结构LD，即Al组分保持不变；另外两个LD的EBL是Al组分阶梯渐变EBL结构，Al组分渐变方式分别是(0~0.07~0.16)和(0.16~0.07~0)；还有一个是Al组分三角形渐变的EBL结构LD，即(0~0.16~0)。对四种LD的光电性能进行了分析和表征。能带图表明Al组分阶梯渐变EBL(0~0.07~0.16)相对于传统EBL阻碍电子泄漏的导带势垒高度明显提高，有利于空穴注入的价带势垒高度降低，提高了载流子注入效率和辐射复合效率，从而提高了LD的IQE；光场分布图表明Al组分阶梯渐变EBL结构能够将光场限制在有源区内，降低了光子损耗，从而降低了阈值电流。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "LD结构和模拟参数" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "传统均匀Al组分Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.16" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "N EBL LD作为参考" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。本文研究的GaN基蓝光LD外延层结构从n侧到p侧顺序依次为：700 nm厚的GaN接触层(Si掺杂浓度为5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ");550 nm厚的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.92" } ] }, { "name": "text", "data": "N GaN激射层(Si掺杂浓度为5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ")；由100 nm GaN层和40 nm厚的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.99" } ] }, { "name": "text", "data": "N层组成的双波导(Waveguide layer,WG)(Si掺杂浓度为5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ");5个3 nm厚的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.22" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.78" } ] }, { "name": "text", "data": "N量子阱(Quantum well,QW);4个12 nm厚的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.99" } ] }, { "name": "text", "data": "N的量子垒层(Quantum barrier,QB)，量子阱与量子垒间隔堆叠构成有源区；20 nm厚的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.16" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "N EBL(Si掺杂浓度为5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ");70 nm厚的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.99" } ] }, { "name": "text", "data": "N p波导层(UWG)(Mg掺杂为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ");400 nm厚的GaN激射层(Mg掺杂浓度为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ");100 nm厚的接触层(Mg掺杂浓度为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ")。如" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a)GaN基蓝光LD外延结构示意图；(b)四种不同Al组分渐变方式EBL结构示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "(a)The schematic diagrams of the GaN-based blue LD epitaxial structure. (b)Four different Al composition graded EBL structures." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020138&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020140&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020139&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "理论研究了GaN基蓝光LD的物理性能。LD的腔长和条宽分别为800 μm和10 μm，工作温度为300 K。电流密度在6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，GaN基蓝光LD获得的IQE和电光转化效率都接近最高值，器件的可靠性最好。同时，2020年，刘建平等在注入电流密度为6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，对高功率GaN基蓝光LD进行了光电性能分析" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，背反射率和镜面反射率分别为0.75和0.85。考虑到固定缺陷和其他接口电荷对内置极化的部分补偿，设置屏蔽因子为0.25,GaN/In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "N异质结的带偏比(Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "/Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": ")=0.7/0.3。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "四元AlInGaN较三元/二元化合物通过调控Al和In使带隙在一个大的范围变化，从而调节极化效应，同时，组分渐变也是降低极化效应的方法之一。因此，研究了Al组分渐变的四元Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N EBL的性能变化。" }, { "name": "xref", "data": { "text": "图1(b)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(b)" } ] } }, { "name": "text", "data": "为传统Al均匀组分、右阶梯渐变组分(0~0.07~0.16)、三角形渐变组分(0~0.16~0)、左阶梯渐变组分(0.16~0.07~0)的EBL结构示意图，分别标记为LD1、LD2、LD3、LD4,Al组分渐变时，EBL中其他组分都保持不变，除了EBL Al组分渐变方式不同，其他结构参数相同。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过仿真模拟对GaN基蓝光LD进行模拟计算，通过求解泊松方程、电流连续性方程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } } ], "rid": [ "R32", "R33" ], "text": "32-33", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、电荷输运方程和产生-复合速率方程等来模拟LD的光学和电学性能。四元化合物Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N的禁带宽度随组分变化的关系为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020150&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020144&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020154&type=" } } } ], "id": "DF1" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020155&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020163&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020158&type=" } } } ], "id": "DF2" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020166&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020169&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020173&type=" } } } ], "id": "DF3" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020181&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020177&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020184&type=" } } } ], "id": "DF4" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020186&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020187&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020188&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "z=" } ] }, { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] }, { "name": "text", "data": "分别是AlInGaN中的Al、In和Ga组分。AlInN、InGaN 和 AlGaN 的能带参数分别是2.5,1.4,0.7 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "根据Fiorentini理论" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "P=P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sp" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "+P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "pz" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sp" } ] }, { "name": "text", "data": "是自发极化，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "pz" } ] }, { "name": "text", "data": "是压电极化，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sp" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "pz" } ] }, { "name": "text", "data": "对GaN基蓝光LD具有重要影响。强静电场会产生内置极化，电子和空穴在量子阱中分离。自发极化可以通过下列公式表示：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(6)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020201&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020203&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020212&type=" } } } ], "id": "DF6" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(7)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020207&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020217&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020220&type=" } } } ], "id": "DF7" } }, { "name": "text", "data": "AlInGaN、InGaN和AlGaN的压电极化可以通过下述公式计算：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(8)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020229&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020239&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020242&type=" } } } ], "id": "DF8" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(9)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020245&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020254&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020256&type=" } } } ], "id": "DF9" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(10)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020252&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020260&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020264&type=" } } } ], "id": "DF10" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(11)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020266&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020279&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020287&type=" } } } ], "id": "DF11" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(12)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020292&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020294&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020302&type=" } } } ], "id": "DF12" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了说明极化匹配情况，对半导体外延层与衬底之间的失配度进行计算。设外延薄膜晶格常数为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "，无应力时衬底的晶格常数为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "，晶格失配度为" }, { "name": "italic", "data": [ { "name": "text", "data": "δ" } ] }, { "name": "text", "data": "，四元AlInGaN化合物的晶格常数计算公式与失配度计算方法为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(13)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020304&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020306&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020321&type=" } } } ], "id": "DF13" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(14)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020312&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020330&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020334&type=" } } } ], "id": "DF14" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "z=" } ] }, { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] }, { "name": "text", "data": "分别是AlInGaN中的Al、In和Ga组分。AlN、InN和GaN的晶格常数分别是0.311 2,0.354 0,0.318 8 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R38", "R39" ], "text": "38-39", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。由公式可得Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.16" } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "N EBL与In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.01" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.99" } ] }, { "name": "text", "data": "N之间的失配度为0.38%，说明EBL与波导层和势垒之间失配度较小，极化效应降低。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "电学性能" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究不同Al组分渐变方式EBL对LD能带结构的影响，对不同Al组分渐变方式EBL LD的能带结构进行分析，从而揭示不同EBL能带带阶变化的规律。四元化合物较三元化合物对能带的影响更复杂，四元化合物通过调节Al和In增加带隙，改变了导带和价带，提高了EBL阻碍电子泄漏的势垒高度，降低了空穴注入的势垒高度，这主要是由于极化电场变小，能带图中能带弯曲减小。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "是四种LD的能带结构图，研究结果表明，当注入电流密度为6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，在极化效应作用下，EBL层与InGaN势垒层界面处导带向下弯曲至费米能级以下，导致在界面处电子容易发生累积。在正向大电流条件下，获得能量的电子很容易从量子阱中溢出，越过EBL外延层进入p侧区域，引起电子泄漏，从而导致LD阈值电流增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。PD" }, { "name": "sub", "data": [ { "name": "text", "data": "n-InGaN WG-cond" } ] }, { "name": "text", "data": "或PD" }, { "name": "sub", "data": [ { "name": "text", "data": "EBL-cond" } ] }, { "name": "text", "data": "分别是电子费米能级与n-InGaN WG或AlInGaN EBL的导带(Conduction band)之间的电位差(Potential difference,PD)，阻碍电子泄漏的势垒高度为PD" }, { "name": "sub", "data": [ { "name": "text", "data": "n-InGaN WG-cond" } ] }, { "name": "text", "data": "和PD" }, { "name": "sub", "data": [ { "name": "text", "data": "EBL-cond" } ] }, { "name": "text", "data": "之间的差值。PD" }, { "name": "sub", "data": [ { "name": "text", "data": "n-InGaN WG-Vale" } ] }, { "name": "text", "data": "是n-InGaN WG层价带费米能级与AlInGaN EBL的价带(Valence band)之间的电位差；PD" }, { "name": "sub", "data": [ { "name": "text", "data": "EBL-Vale" } ] }, { "name": "text", "data": "是AlGaN-EBL层价带费米能级与AlInGaN势垒层(Barrier)价带之间的电位差。空穴注入势垒的高度为PD" }, { "name": "sub", "data": [ { "name": "text", "data": "n-InGaN WG-Vale" } ] }, { "name": "text", "data": "和PD" }, { "name": "sub", "data": [ { "name": "text", "data": "EBL-Vale" } ] }, { "name": "text", "data": "之和。由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "四种EBL能带电势可知，LD1、LD2、LD3和LD4形成的导带电子势垒高度分别是2.10,2.15,2.05,2.07 eV。同时，在EBL与InGaN势垒层界面处，分别形成约2.80,2.70,2.78,2.72 eV的空穴价带注入势垒高度。阻碍电子泄漏势垒高度从均匀组分LD1的2.10 eV提高到2.15 eV，空穴注入势垒高度从均匀组分LD1的2.80 eV降低至2.70 eV，阶梯渐变EBL的LD2导带电子势垒高度最高，价带空穴势垒高度最低。这说明Al组分阶梯渐变EBL LD2能有效阻止电子泄漏，提高了空穴注入。这主要是由于空穴注入价带势垒越低越有利于空穴注入，导带电子泄漏势垒高度增加有利于减少电子泄漏，从而增加了量子阱中的电子和空穴辐射复合的几率。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "当注入电流480 mA(电流密度为6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")时，EBL不同Al组分渐变的能带变化曲线(图(b)是图(a)1 350 ~1 500 nm的放大图；图(d)是图(c)1 350 ~1 500 nm的放大图)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "The energy band " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " position of different Al composition-graded EBL structure at injection current 480 mA(injection density 6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")(Fig.(b) is the magnification of the Fig.(a) from 1 350 nm to 1 500 nm, Fig.(d) is the magnification of the Fig.(c) from 1 350 nm to 1 500 nm)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020335&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020338&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020345&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过分析电流泄漏密度与注入电流的关系验证四种不同Al组分渐变EBL能带结构对LD电子泄漏的影响规律。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "是泄漏电流密度与注入电流关系曲线，随着注入电流的增加。泄漏电流密度增加。在电流为480 mA时，LD2的泄漏电流密度最低，这主要是由于Al组分阶梯渐变EBL LD2有源区中的电子准费米能级提高，有效抑制了电子进入p侧" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从而减少了电子泄漏；LD3的泄漏电流密度最高，这是因为LD3抑制电子泄漏的导带势垒高度最低，空穴注入价带势垒高度最高，从而导致泄漏电流密度的增加；Al组分阶梯渐变EBL的LD4的泄漏电流密度略高于传统均匀组分EBL的LD1，这是由于LD4的阻碍电子泄漏的导带势垒高度小于LD1，同时LD1小于LD2，从而泄漏电流密度低于LD2和LD1。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同Al组分渐变EBL下LD泄漏电流密度与注入电流关系曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "Leakage current density of LD " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " the injected current for different Al composition EBL structure" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020340&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020351&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020349&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "载流子注入效率是影响LD电学性能的重要参数之一。载流子注入效率变化对工作电压有着重要影响，载流子注入效率越高，工作电压越低。因此，需要进一步分析注入电流对电压和载流子注入效率的影响规律。" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "是不同Al组分渐变EBL结构电压与注入电流的关系曲线，结果表明，随着注入电流增加，电压增加。当注入电流480 mA时，四种LD的工作电压从低到高的顺序是LD4、LD2、LD1、LD3。LD2的工作电压低于LD3和LD1，这主要是因为Al组分阶梯渐变的LD2的导带电子泄漏势垒高度增加和价带空穴注入势垒高度降低，降低了载流子泄漏，提高了载流子注入效率，从而降低了工作电压。当注入电流480 mA时，LD4的工作电压最低。这主要是由于Al组分阶梯渐变EBL的LD4导带电子泄漏势垒高度降低，然而空穴注入势垒高度增加，但是空穴注入势垒高度的提高补偿了导带电子泄漏势垒高度降低带来的影响，从而降低了载流子注入效率，进而导致工作电压升高。" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "是载流子注入效率与注入电流关系曲线，结果表明，随着注入电流增加，载流子注入效率提高。当注入电流为480 mA时，LD2的载流子注入效率最高，这主要是由于Al组分渐变EBL的LD2通过调节带隙宽度和Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1" }, { "name": "italic", "data": [ { "name": "text", "data": "-x-y" } ] } ] }, { "name": "text", "data": "N EBL与p侧量子阱之间的晶格匹配，减少了电子泄漏，提高了空穴注入有源区，进而减少了界面缺陷和界面载流子损耗，从而降低了工作电压和提高了载流子注入效率。由于LD4的泄露电流密度高于LD2和LD1，从而导致LD4的注入效率低于LD2。当注入电流为480 mA时，LD3的注入效率最低，这主要是由于LD3电子泄漏的导带势垒高度降低和空穴注入的势垒高度增加，造成电子泄漏增加和空穴注入效率降低，导致载流子注入效率降低。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同Al组分渐变EBL下LD电压(a)、注入效率(b)与注入电流关系曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Voltage(a), injection efficiency(b) of LD " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " the injected current for different Al composition-graded EBL structure." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020353&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020357&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020354&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过分析IQE与注入电流之间的关系探究Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N EBL Al组分渐变方式对GaN基蓝光LD IQE的影响。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "是四个不同Al组分渐变EBL结构LD的IQE与注入电流关系曲线，结果表明，注入电流小于500 mA时，IQE逐渐增加。当注入电流为480 mA时，LD2的IQE最高达到95.6%,LD1、LD3和LD4的IQE分别是91%、73.5%和93.2%。这是因为泄漏电流密度和非辐射复合共同影响IQE，而LD2的泄漏电流密度最低，从而导致LD2的IQE最高。LD2的非辐射复合将在下面章节进行分析。因此，阶梯渐变EBL结构LD2在该注入电流下能够有效抑制载流子泄漏，三角形渐变和传统均匀组分EBL结构不能抑制电子从有源区进入p侧，造成载流子泄漏严重，泄漏电流密度增加；同时LD4泄漏电流密度低于LD2，载流子注入效率低于LD2，从而降低了IQE。因此，LD2的阶梯渐变EBL结构降低了材料的极化效应，提高了空穴注入效率，使空穴在量子阱有源区中的分布更加均匀" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；同时该结构能抑制电子从有源区进入p侧，载流子注入效率提高，从而提高了IQE。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同Al组分渐变EBL下LD IQE与注入电流关系曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "IQE of LD " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " the injected current for different Al composition EBL structure" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020374&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020365&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020376&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究非辐射复合对有源区IQE的影响，分别对非辐射复合电流密度、俄歇复合电流密度和SRH复合电流密度与注入电流的关系进行了分析，如" }, { "name": "xref", "data": { "text": "图6(a)~(c)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)~(c)" } ] } }, { "name": "text", "data": "。非辐射复合主要包括俄歇复合和SRH复合。非辐射复合、俄歇复合和SRH复合可以分别通过非辐射复合电流密度、俄歇复合电流密度和SRH复合电流密度表征。当注入电流为480 mA时，LD2的非辐射复合电流密度最低，LD1最高，这主要是由于Al组分渐变EBL结构降低俄歇复合和SRH复合，三角形渐变EBL结构不能有效降低俄歇复合和SRH复合；LD2的俄歇复合电流密度最低，LD1最高，这主要是由于Al组分渐变EBL结构提高了载流子空穴注入效率，从而降低了俄歇复合电流密度；LD2的SRH复合电流密度最低，LD3最高，这主要是由于通过采用四元Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "N EBL降低了与靠近p侧量子阱之间的晶格失配，降低了极化效应，减少了界面处的缺陷，从而降低了SRH辐射复合。其中LD4的非辐射复合电流密度、俄歇复合电流密度和SRH复合电流密度高于LD3和LD1，但低于LD2，这主要是由于LD2比LD4的量子阱中载流子浓度更高、极化效应更低和界面处缺陷更少，从而降低了辐射复合电流密度。阶梯渐变EBL结构非辐射复合最低，俄歇复合最低，SRH复合最低。LD2俄歇复合电流密度和SRH复合电流密度最低，从而导致LD2非辐射复合电流密度最低。因此，LD2的IQE最高主要由于其低非辐射复合率和低泄漏电流密度导致的。非辐射复合电流密度主要受俄歇复合电流密度的影响，当有源区载流子浓度高时，俄歇复合又受有源区载流子浓度的影响。" }, { "name": "xref", "data": { "text": "图6(d)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(d)" } ] } }, { "name": "text", "data": "是有源区载流子浓度与注入电流的关系曲线，结果表明，LD2的有源区载流子浓度最高，LD2的俄歇复合最低，从而降低了LD2的非辐射复合电流密度。这是由于Al组分阶梯渐变的EBL结构LD2能够有效缓减极化效应，提高了载流子注入效率和有源区载流子浓度，使空穴和电子在有源区分布更加均匀，从而降低了非辐射复合电流密度。LD1的非辐射电流密度最高是因为其俄歇复合电流密度和SRH复合电流密度高导致。因此，Al组分阶梯渐变EBL的LD2能够有效降低泄漏电流密度，增加了注入效率，降低了俄歇复合，增加了有源区载流子浓度，降低了非辐射复合电流密度，从而提高了IQE。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同Al组分渐变方式EBL下LD非辐射复合电流密度(a)、俄歇复合电流密度(b)、SRH复合电流密度(c)、有源区载流子密度(d)与注入电流关系曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "The curves of non-radiative current density(a), Auger current density(b), SRH current density(c) and active region carrier concentration(d) " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " injected current at different Al composition EBL structure." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020370&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020382&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020380&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "综上所述，Al组分阶梯渐变EBL结构LD2的抑制电子泄漏的导带势垒高度最高，阻碍空穴有效注入的价带势垒高度最低；Al组分阶梯渐变EBL结构LD4抑制电子泄漏势垒高度低于均匀组分EBL结构LD1，但是其空穴注入势垒高度低于LD1；综合分析，LD2电学性能最佳，LD4电学性能低于LD2优于LD3和LD1。因此，Al组分阶梯渐变EBL结构提高了电子泄漏的导带势垒高度，降低了空穴注入的价带势垒高度，有效抑制了电子泄漏，促进空穴注入有源区，降低了非辐射复合和俄歇复合，增加了有源区载流子浓度，提高了载流子注入效率，从而提高了有源区辐射复合效率，进而提高了IQE。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "光学性能" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "由于LD外延层中电子和空穴对光子的吸收系数不同，因此光场分布是影响光子损耗的主要因素之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } } ], "rid": [ "R42", "R43" ], "text": "42-43", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。通过分析不同Al组分渐变EBL LD的光场分布讨论了不同Al组分渐变EBL结构对LD光学性能的影响。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "是四个LD器件的折射率分布和模拟光场分布。结果表明，在相同的波导模式下，LD1、LD2、LD3、LD4的光学限制因子分别是3.29%、3.50%、3.30%、3.43%，其中LD2的光学限制因子最高，LD2的光场强度也就最高。LD光学限制因子的不同是由于采用了不同Al组分渐变方式EBL导致。由" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "可知，阶梯渐变EBL结构LD2和LD4能将光场限制在量子阱内，减少光场泄漏，从而提高了光场强度和光增益。因此，Al组分阶梯渐变EBL的LD光学限制因子最高，将光场限制在有源区量子阱中，减少了光场泄漏，从而提高了输出功率。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同Al组分渐变EBL下TE-模的折射率分布和强度分布(图(b)是图(a)1 200~1 650 nm的放大图)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "The refractive index profiles and the corresponding optical-field distributions of different Al composition-graded EBL structure(Fig.(b) is the magnification of the Fig.(a) from 1 200 nm to 1 650 nm)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020389&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020385&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020383&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "光子损耗是影响LD性能的因素之一，光子内损耗越高，LD的阈值电流越高，输出功率越低。这主要是由于自由载流子能够吸收量子阱内外的光子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了分析不同Al组分渐变EBL对LD光学损耗的影响，对外损耗、内损耗和总损耗与注入电流的关系进行了对比分析。" }, { "name": "xref", "data": { "text": "图8(a)~(c)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)~(c)" } ] } }, { "name": "text", "data": "分别是四种不同Al组分渐变方式下外损耗(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": ")、内损耗(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "QW" } ] }, { "name": "text", "data": ")和总损耗(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Total" } ] }, { "name": "text", "data": ")与注入电流的关系曲线。由" }, { "name": "xref", "data": { "text": "图8(a)~(c)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)~(c)" } ] } }, { "name": "text", "data": "可知，当注入电流为480 mA(电流密度为6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")时，阶梯渐变EBL结构LD2和LD4的外损耗明显低于均匀组分EBL结构LD1和三角形组分EBL结构LD3,LD2和LD4的内损耗低于LD1和LD3,LD2和LD4的总损耗也明显低于LD1和LD3。这是由于阶梯渐变EBL结构提高了载流子注入效率，降低了阱外非辐射复合，有效降低了阱外的光子损耗，同时将光子限制在量子阱内，降低了量子阱内光子损耗，从而降低了总损耗。阈值电流是影响GaN基蓝光LD性能的重要技术参数之一。内部光子损耗高和非辐射复合效率高会导致阈值电流提高，从而降低了光输出功率和电光转换效率。因此，对阈值电流进行分析讨论具有很重要的意义。" }, { "name": "xref", "data": { "text": "图8(d)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(d)" } ] } }, { "name": "text", "data": "是四种LD的阈值电流，四种不同EBL结构LD的阈值电流分别是43.5,32.4,77.2,45.1 mA。其中LD2的阈值电流最小，这主要是由于其量子阱的内和外光损耗以及俄歇复合最小，从而减少了光损耗和载流子损耗。LD3的阈值电流最大，这主要由于内部光子损耗最大，非辐射复合也较大导致的。这是由于LD的阈值电流与内部光子损耗和非辐射复合有关，内部光子损耗越大，非辐射复合越高，阈值电流越大。LD2的非辐射复合效率和内部光子损耗最低，从而降低了LD2的阈值电流。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "不同Al组分渐变EBL下LD的多量子阱外(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": ")(a)、内(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "QW" } ] }, { "name": "text", "data": ")(b)、总损耗(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Total" } ] }, { "name": "text", "data": ")(c)和阈值电流(d)随注入电流的变化曲线(箭头所指0.48 A)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "The optical loss outside multiple quantum wells(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": ")(a), optical loss in multiple quantum wells(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "QW" } ] }, { "name": "text", "data": ")(b), total optical loss(" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Total" } ] }, { "name": "text", "data": ")(c), threshold current(d) of LD with different Al composition-graded EBL structure " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " the injected current(The arrow indicates 0.48 A)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020391&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020387&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020393&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究不同Al组分渐变EBL对输出功率和转换效率的影响，对功率和转换效率与注入电流的关系曲线进行分析，" }, { "name": "xref", "data": { "text": "图9(a)、(b)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(a)、(b)" } ] } }, { "name": "text", "data": "分别是输出功率、转换效率与注入电流的关系曲线。由" }, { "name": "xref", "data": { "text": "图9(a)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(a)" } ] } }, { "name": "text", "data": "可知，EBL不同渐变方式下，注入电流增加，输出功率随之增加。在注入电流为480 mA时，LD1、LD2、LD3、LD4的输出功率分别为335,352,264,350 mW,LD2的输出功率最高，LD3的输出功率最低。这是由于LD2的电子泄漏低和空穴注入效率高，增加了有源区载流子浓度，提高了有源区辐射复合效率和IQE，从而提高了LD2输出功率。转换效率是衡量GaN基蓝光LD性能的重要指标。" }, { "name": "xref", "data": { "text": "图9(b)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(b)" } ] } }, { "name": "text", "data": "是转换效率与注入电流关系曲线，结果表明，随着注入电流增加，转换效率先快速增加，然后缓慢降低。这是因为随着注入电流增加，LD的损耗增加，功率会逐渐饱和。当注入电流为480 mA时，LD2光电转换效率最高达13.4%,LD2和LD4转换效率相同，LD1为12.5%,LD3的最低为9.97%。这是因为LD2泄漏电流密度最低，有源区辐射复合效率最好，IQE最高，输出功率最高，所以LD2的功率转化效率最高。LD4价带空穴注入势垒高度增加补偿了电子泄漏的问题，提高了IQE，从而提高了输出功率。LD1和LD3功率转化效率降低相对LD2和LD4来说不明显，这是由于LD1和LD3损耗严重，导致转换效率明显下降。因此，采用阶梯渐变EBL结构可以明显提高LD的电光转换效率。外延层的等效电阻主要是由p侧外延层电阻决定，p侧空穴迁移速度低于n侧。因此，EBL对LD工作电压有着重要影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。基于以上分析可知，工作电压越大，光电转换效率就越小。因此，Al组分阶梯渐变EBL LD2能够通过调控能带结构和光场分布，减少电子泄漏和光子损耗，提高载流子注入效率和辐射复合效率，达到降低阈值电流的目的，最终实现高输出功率和高电光转换效率。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "不同Al组分渐变EBL下LD的功率(a)、转换功率(b)与注入电流关系曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 9" } ], "title": [ { "name": "text", "data": "Simulated power(a) and conversion efficiency(b) of LD with different Al composition-graded EBL structure " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " injected current" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020404&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020408&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020406&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过调控量子阱的能带结构降低极化效应，提高了载流子注入效率，从而提高了量子阱中的辐射复合。Al组分阶梯渐变EBL结构通过调节能带结构有效降低空穴注入的价带势垒高度和提高电子泄漏的导带势垒高度，抑制了载流子泄漏，提高了载流子的注入效率，降低了有源区的非辐射复合电流密度，从而提高了IQE。同时，Al组分阶梯渐变EBL结构通过调节光场分布增加了光场限制，减少了光子损耗，从而降低了阈值电流。其中，Al组分阶梯渐变(0~0.07~0.16)EBL结构相对于另外一种Al组分阶梯渐变(0.16~0.07~0)EBL结构具有更优的光电性能。当注入电流为480 mA(6 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")时，Al组分阶梯渐变(0~0.07~0.16)EBL结构LD输出功率和电光转换效率分别从335 mW、12.5%提高至352 mW、13.4%。因此，Al组分右阶梯渐变(0~0.07~0.16)EBL的LD具有最优的光电性能。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220016." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NAKAMURA S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SENOH M" }, { "name": "text", "data": ", " }, { "name": "text", "data": 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