Research Progress of Graphene Based Photodetectors Under Different Response Mechanisms Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "不同响应机制下的石墨烯基光电探测器研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Research Progress of Graphene Based Photodetectors Under Different Response Mechanisms" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "张", "givenname": "翼鹏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Yi-peng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "张翼鹏(1995-)，男，河北辛集人，硕士研究生，2017年于天津科技大学获得学士学位，主要从事二维材料器件制备的研究。E-mail: pz199572@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724753&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724756&type=", "big": 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"namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Jian", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "凯敏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Kai-min", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "睿", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Rui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "于", "givenname": "凯丞", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YU", "givenname": "Kai-cheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "田", "givenname": "昊", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TIAN", "givenname": "Hao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "马", "givenname": "雷", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MA", "givenname": "Lei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*E-mail: lei.ma@tju.edu.cn", "data": [ { "name": "text", "data": "*E-mail: lei.ma@tju.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "马雷(1976-)，男，新疆石河子人，博士，教授，2010年于南京大学获得博士学位，主要从事低温凝聚态及电子器件物理的研究。E-mail: lei.ma@tju.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724738&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724761&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724741&type=" } ], "data": [ [ { "name": "text", "data": "马雷" }, { "name": "text", "data": "(1976-)，男，新疆石河子人，博士，教授，2010年于南京大学获得博士学位，主要从事低温凝聚态及电子器件物理的研究。E-mail: " }, { "name": "text", "data": "lei.ma@tju.edu.cn" } ] ] } ], "email": "lei.ma@tju.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "天津大学　天津纳米颗粒与纳米系统国际研究中心，天津　300072", "data": [ { "name": "text", "data": "天津大学　天津纳米颗粒与纳米系统国际研究中心，天津　300072" } ] }, { "lang": "en", "label": "1", "text": "Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin 300072, China", "data": [ { "name": "text", "data": "Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin 300072, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "光电探测器因可将光信号转换为电信号而被广泛地应用于视频成像、光通信、生物医学成像和运动检测等方面。但由于所采用的传统光电探测器材料对其性能带来的局限性和日益增长的新需求之间的矛盾，使得寻找新的材料迫在眉睫。近年来新兴的二维材料为制备更高性能的探测器提供了全新的材料研究平台，其中石墨烯以其独特的电学、光学与热学特性成为下一代高性能光子学最有希望的候选材料之一。本文系统地综述了不同光响应机制下石墨烯基光电探测器研究现状，并在此基础上对当下不同石墨烯基光电器件发展前景进行了细致的讨论和展望。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Photodetectors are widely used in video imaging, optical communication, biomedical imaging and motion detection since their ability of converting optical signals to electrical signals. The limited performances of traditional photodetectors are mainly due to the intrinsic properties of materials which they are made of, therefore, it is pressingly needing to find new materials for developing new photodetectors with superior performances. In recent years, the emerging two-dimensional materials have provided a whole category of novel material platforms for fabricating higher-performance detectors. Among them, graphene is one of the most promising candidate material for the next generation high-performance photonics benefiting its unique electrical, optical and thermal properties. In this manuscript, we have systematically summarized the research progress and status on the graphene based photodetectors according to their light response mechanisms, and followed by a concise future prospect on different graphene photoelectric devices." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "石墨烯" } ], [ { "name": "text", "data": "光电探测器" } ], [ { "name": "text", "data": "响应机制" } ], [ { "name": "text", "data": "研究进展" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "graphene" } ], [ { "name": "text", "data": "photodetector" } ], [ { "name": "text", "data": "response mechanism" } ], [ { "name": "text", "data": "research progress" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器基于光电效应能够将光信号转换为电信号从而被广泛地应用于视频成像、光通信、生物医学成像和运动检测等方面。在传统硅基光子学中，光电探测器沟道材料多为硅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、锗" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R2", "R3" ], "text": "2-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "或Ⅲ-V化合物等半导体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然而这些材料在实际应用中都存在一定的局限性。以传统硅基光电探测器为例，其在电信波段的光子能量通常不足以直接进行光探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，人们通过掺杂制备了硅掺杂肖特基光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，相较于本征硅，该器件在1 550 nm(电信波段)入射光波长下的响应度有了较大的提高(超过1.2 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")。但由于同时产生的暗电流也较大，所以限制了它的探测度。对于Ⅲ-V半导体基探测器来说，虽然它们具有优良的工作特性，但由于器件制造中的晶格失配和材料热系数不同等问题，也限制了通过引入电复合中心或光散射中心来提高器件性能的方法在该体系的适用性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，在硅晶片上直接集成Ⅲ-V光电探测器仍面临很多困难，类似的问题也在锗光电探测器领域存在" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R2", "R3" ], "text": "2-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此，寻找更好的光电材料对高速光电探测器的发展尤为重要。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "二维材料作为一种极具潜力的光电子材料为高性能光电子器件的开发提供了新的材料平台" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R7", "R8" ], "text": "7-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中又以石墨烯最具代表性，其主要原因在于石墨烯具有很高的载流子迁移率(高达15 000 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "· s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")，所以原理上讲以它为工作介质的光电探测器相比于其他二维材料应该能够产生更强的电学信号以及具有更快的光电转化速率。此外，由于其独特的零带隙结构使得通过光激发电子从价带跃迁到导带所需的能量几乎为零" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此绝大部分波段的入射光都应该能在石墨烯中产生一定强度的光电流，从而可将石墨烯应用于包括紫外(" }, { "name": "text", "data": "<" }, { "name": "text", "data": "400 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、可视(400~760 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、近红外(760~1 100 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、短波红外(1 100~2 500 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、中波红外(3 000~5 000 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、长波红外(7 000~14 000 nm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和太赫兹(0.3~3.0 THz)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R16", "R17" ], "text": "16-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等多个波段。虽然石墨烯具有非常宽的吸收光谱范围，但是对不同波长光的吸收率差异性非常大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R18", "R19" ], "text": "18-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。所以，目前人们所制备的石墨烯基光电探测器往往只对某一段或者某几段波长的入射光较为敏感，由此在一定程度上限制了器件的应用范围。基于此，有研究人员想到了掺杂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R20", "R21" ], "text": "20-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "或器件结构设计" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的方法来尝试提高石墨烯对低吸收率光波段的响应，并取得了一定程度的成功。此外，由于石墨烯具有化学钝化的特性，可以与已经颇为成熟的硅基电子学和光子学技术相兼容，所以在大规模集成电路方面有着较为广阔的应用前景" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这也为光电转换的后续处理奠定了基础。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "综上所述，石墨烯基光电探测器的性能具有很大的提升空间，但同时也面临着一系列技术问题。除了可探测的波长范围较窄外，由于单层石墨烯本身只有一个原子层的厚度，所以对入射光吸收率也只有2.3%，因此在一些情况下无法达到光电探测器所需要的基本指标" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，虽然利用掺杂的方式可以在很大程度上提高对某些波段的吸收效率，但也同样会降低石墨烯的载流子迁移率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R20", "R21" ], "text": "20-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因而对石墨烯光电探测器的响应速度带来了不利的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } } ], "rid": [ "R25", "R26" ], "text": "25-26", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于新兴的太赫兹波段入射电磁波而言，外界的温度还会对太赫兹器件的响应度及噪声等效功率产生显著的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，如果在石墨烯基光电探测器的设计上过于依赖传统的光电晶体管结构，也会不可避免地出现比半导体基源极栅极还要大的漏电情况，由此而产生的器件暗电流所带来的自加热也会进一步降低此类器件的可靠性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。所以，为了优化上述光电探测器的“固有”指标，研究者通常需要从器件结构改进方面入手，但同时还必须考虑石墨烯基光电探测器的制造成本问题。一般来说，作为一个有效的石墨烯基光电探测器，必须要满足低成本、环境友好、可快速大量制备等要求，其次器件还必须能够小型化且具有和其他半导体集成的能力。对于光电探测器而言，小型化在一定程度上意味着“固有”指标的降低，比如光响应度等。如下文所述，小型化也会对于特定响应机制下的器件其他的功能造成影响。特别是对于需要靠波导来增强光吸收的器件而言，小型化也意味着更低的吸收度和更为复杂的加工工艺，这无疑会进一步增加制造成本。因此，在制备石墨烯基探测器过程中需要合理设计结构以保证其性能和成本需求。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "如大家所熟知的，不同的响应机制影响到器件结构的设计。当前石墨烯基光电探测器主要有五种结构：传统单栅控结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R20", "R21" ], "text": "20-21", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、双栅控结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、石墨烯悬浮结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、量子点混合结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R29", "R30" ], "text": "29-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和基于等离子体共振的阵列集成结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } } ], "rid": [ "R31", "R32", "R33", "R34", "R35", "R36", "R37", "R38", "R39", "R40", "R41", "R42", "R43", "R44", "R45", "R46", "R47", "R48", "R49", "R50", "R51", "R52", "R53", "R54", "R55" ], "text": "31-55", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。此外，还有除上述五种结构的其他结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但无论何种设计，其原则都是为了尽可能发挥主要响应机制，抑制非主要响应机制" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在实际工作中，研究者往往会在同一结构设计中引入多种机制来满足实际需要" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。比如，就提升响应度对结构依赖性很强的光栅控机制和等离子体辅助机制的光探测器设计而言" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，不论是引入量子点还是加入集成阵列方式的应用，虽然都能够提高器件的响应度，但也都不可避免地在一定程度上对石墨烯结构造成破坏，所以也降低了石墨烯的载流子迁移率和石墨烯基光电探测器响应速度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，对于能量较低、波长较长的中波红外、长波红外、太赫兹光而言，这种牺牲响应速度来换取响应度地设计也反映了当前石墨烯光电探测器的局限性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在光伏效应、光热电效应、光辐射热效应这三种相对不依赖于器件结构的响应机制中，光伏效应是能最大限度保证除响应度以外其他各类指标的响应机制" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。主要原因在于光伏效应是石墨烯最基本的光电响应机制，在无人为加工的前提下，光伏效应总是占主导地位，而其余效应的应用则需要同其竞争" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在利用光伏效应的器件开发中，通过栅控来调节费米能级以便形成稳定的光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，光伏效应较低的响应度又往往限制了其应用，尤其是在高波段范围" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。为此，研究者将目光投向了光生热机制的应用，寄希望于利用光生热来提高响应度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2011年，研究人员首次研制出了利用光辐射热和光热电效应的石墨烯基光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，无论是采用双栅控结构打开带隙从而最大限度地利用光辐射热效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，还是采用石墨烯悬浮结构来尽量减少衬底对热载流子的影响从而最大限度地利用光热电效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，对响应度的提高作用都很有限。为此， 2012年研究人员发明了采用量子点混合结构产生电子-空穴对的方法，通过该方法的应用实现了光响应度的显著提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并在此基础上又通过引入等离子辅助阵列集成结构成功地部分解决了长波段光响应的问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } } ], "rid": [ "R31", "R32", "R33", "R34", "R35", "R36", "R37", "R38", "R39", "R40", "R41", "R42", "R43", "R44", "R45", "R46", "R47", "R48", "R49", "R50", "R51", "R52", "R53", "R54", "R55" ], "text": "31-55", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "无论是器件本身性能指标上的不足，还是生产工艺上的高成本，都对石墨烯基光电探测器的发展提出了重大挑战。而问题的根本原因还是在于实际开发中基于某一需求所开发的石墨烯基光电探测器往往存在多种光响应机制，恰恰是这些响应机制的互相竞争反而会导致产品无法达到所需性能要求。尽管目前已有许多关于改善石墨烯基光电探测器总体性能的报道，但基于不同响应机制来提升整体光电探测器性能的综述却不多见。所以，本文从光伏、光热电、光辐射热、等离子波辅助、光栅控效应和光电导效应六种基本的物理机制入手，总结了不同响应机制下石墨烯光电探测器的最新进展，并对等离子波辅助、光栅控效应的器件结构设计进行深入探讨。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "石墨烯基光电探测器" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "由于石墨烯具有独特的光学吸收特性、高迁移率等优点，在光电器件领域具有非常大的应用潜力。根据石墨烯基光电探测器的不同响应机制，我们可以制备出具有不同性能的光电器件从而更好地适应于不同领域。如上所述，石墨烯基光电探测器的响应机制主要有光伏效应、光辐射热效应、光热电效应、等离子波辅助、光栅控效应和光电导效应等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，下面我们将详细地介绍不同响应机制对应的石墨烯基光电探测器的研究进展。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "基于光伏效应的石墨烯基光电探测器" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "光伏效应是指一种材料在光照下产生电流或者电压的过程。石墨烯具有静电掺杂后的可调性、大电荷载流子浓度、低耗散率、高迁移率以及可将电磁能量限制在前所未有的小体积内等优点。因此，相较于其他二维材料，它在光伏应用方面应具有较大的优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "典型的基于光伏效应的石墨烯基光电探测器结构由两个电极搭载中间的石墨烯沟道组成，其中沟道材料可以采用机械剥离的石墨烯。在此基础上通过电子束曝光和真空金属蒸镀以及标准的剥离工艺制备出金属电极(0.5 nm/20 nm/30 nm: Ti/Pd/Au)，最后由反应离子刻蚀图案化石墨烯沟道。背栅介质层为90 nm厚的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层，一般在测试之前需要通过真空50 ℃退火消除吸附" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在石墨烯沟道中，由于入射光子激发产生光生电子-空穴对" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R20", "R21" ], "text": "20-21", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，然后电子-空穴对在内电场作用下分离形成光生电子，光生电子在外部偏置电压的调制下形成光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } } ], "rid": [ "R66", "R67" ], "text": "66-67", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "具有不对称金属电极的金属-石墨烯-金属(MGM)光电探测器。中心：MGM光电探测器的三维示意图，右下角：MGM光电探测器扫描电子显微镜图片。插指电极之间的间隙为1 mm，插指宽度为250 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Metal-graphene-metal(MGM) photodetectors with asymmetric metal contacts. Main panel: three-dimensional schematic of the MGM photodetector. Bottom right: scanning electron micrograph of the MGM photodetector. Scale bar, 5 mm. The spacing between the metal fingers is 1 mm and the finger width is 250 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724743&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724745&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724766&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2009年，Xia等提出了利用光照下石墨烯-金属结界面处产生的p-n结来实现光伏效应的设计思路" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并在2010年成功地设计出基于该原理能在近红外和可视光范围内工作的光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其中在1 550 nm入射光波长下响应度为6.1 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。为了克服响应度低的缺点，Svechnikov等提出采用双层石墨烯作为沟道来增强其吸光率进而提高响应度的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但使用双层石墨烯在提高器件吸光度的同时也降低了载流子迁移率，进而减小了光电流和响应度(光电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "AVqμ" } ] }, { "name": "text", "data": "Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，响应度" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "in" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "为作用层的横截面积，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "为施加偏压，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "为单位电子电荷，" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "text", "data": "为电荷载流子迁移率，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "为光致载流子密度)。光电探测器的工作原理一般是通过半导体材料吸收光子产生额外的自由载流子(即光生载流子)，载流子吸收能量发生移动从而提高了材料的电导率。这里响应度的定义为：单位入射功率下产生的光电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "或者光电压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "与入射光功率" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "in" } ] }, { "name": "text", "data": "的比值。由此可知提高材料的吸光率可在一定程度上提高器件的响应度。Wang等在2013年设计了单层石墨烯/硅异质结波导光电探测器，该设计的特点是在保证载流子迁移率的同时通过引入波导来提升吸收率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。实验结果为：对于1 550 nm入射光波长，探测器响应度为0.13 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，这一结果比之前提高了至少一个量级，表明了增强吸收率对增强响应度的重要性。本实验中悬浮薄膜波导和聚焦亚波长光栅耦合器是在SOI晶圆上制备完成的，其制造工艺同CMOS工艺兼容。其中制作流程主要包括周期孔和光栅耦合器的全刻蚀以及rib波导的浅刻蚀工艺获得响应的图形化。最后，在5∶1的水∶HF(48%~51%浓度)溶液中搅拌90 min，去除埋氧层从而制备悬浮膜结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了通过提高吸收率来增强光响应度外，调节费米能级的高低同样可以有效地调节光伏效应，因此采用局域掺杂来调节费米能级以增强其光伏特性的方法近年来被广泛地使用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Nan等通过对石墨烯不同部分进行N型掺杂和P型掺杂，在整个石墨烯覆盖区域形成一个较大的“P-N结”" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。利用扩大光电流在整个器件的产生区域提高器件的利用效率。在此基础上，通过调控不同类型掺杂区域面积比、栅压大小、掺杂层厚度等方法，在不需要牺牲响应速度的前提下，实现了器件在入射光为300 nm~6 μm波段均可工作的目标。需要注意的是，这项工作中同时应用了三种效应，即光伏效应、光热电效应、光辐射热效应，并且光伏效应和光热电效应均对响应度、响应速度指标的提升作用显著。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为实现光伏效应零偏压下的光子检测，需要极高的归一化光电流与暗电流之比(NPDR)、低能耗以及极低的暗电流引起的暗电流散粒噪声。利用石墨烯同其他二维材料形成的异质结可以制备出暗电流极低(这意味着更好的探测度)的光电传感器，而这也正是近年来在光伏效应下石墨烯基光电探测器领域研究者工作的重点之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } } ], "rid": [ "R70", "R71" ], "text": "70-71", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。2021年，Feng等通过将单层石墨烯集成在硅基纳米柱阵列上，成功地实现了暗电流有效抑制，同时在接近零偏压时做到了尽量小的光电流衰减，为此成功地显著提高了比探测率(" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "基于单层石墨烯覆盖的硅纳米柱阵列光电探测器简图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Schematic diagram of silicon nano column array photodetector covered by single-layer graphene" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724767&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724778&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724747&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "光伏效应是这六种机制中最早被应用于石墨烯光电探测器的机制，然而由于其响应不仅依赖于入射光激发形成的电子空穴对，而且还依赖于外加栅压对光生电子空穴对的分离效果，所以对入射光波段要求很高，这就在很大程度上限制了其在大波段范围内的应用。尽管2014年Nan等采用静电掺杂的方案兼顾了响应波段范围、响应度及响应速度等因素，但也引入了其他响应机制，而这正反映了基于纯光伏效应的石墨烯基光电探测器的局限性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此后，研究人员将目光转到优化光伏效应下石墨烯基光电探测器的其他性能指标，如光暗电流比、等效噪声功率等。这些研究成果有望被应用于同其他机制并存的光电探测器结构的设计中。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "基于光辐射热效应下的石墨烯基光电探测器" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "由入射光子产生的热量导致沟道电导发生变化的现象称为光辐射热效应。2013年，Freitag等尝试制备了室温下基于光辐射热效应的石墨烯基光电探测器(如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其工作原理是在石墨烯场效应晶体管的一个漏电极上施加" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "=-1 V电压的同时，再通过施加背栅静电调控石墨烯掺杂程度。当样品上扫描波长为690 nm的斩波和聚焦激光束时，使用参考斩波频率的锁相放大器可以同时获得光电流幅度和相位(" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": ")。虽然波段范围覆盖了可视光和全波段红外光，但是即使在可见光波段(690 nm)，其响应度也只有0.13 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，甚至比最初开发的基于光伏效应的光电探测器还至少要小一个量级。2012年，Yan等受到石墨烯-铝隧道结测辐射热计结构的启发，发现在低温下(5 K)采用双栅控结构的双层石墨烯不但可以提高在可见光波段(658 nm)下的响应度(10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " V·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，还能降低等效噪声功率(33 fW·Hz" }, { "name": "sup", "data": [ { "name": "text", "data": "-1/2" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且响应波段宽，即使在长红外波段依旧具备良好的光响应度。该结构对超导隧道结的开发具有参考价值" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中双层石墨烯采用机械剥离法制备，并转移到具有300 nm厚的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "硅片上，电子束曝光和热蒸镀图案化金属电极(5 nm Cr/100 nm Au)，在溅射SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为顶栅介质之前，使用电子束曝光的氢硅氧烷保护石墨烯" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "激光波长为690 nm的光电探测器设置示意图。激光强度" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "=220 mW，束斑直径" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "≈700 nm，斩波频率" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "=1.1 kHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "Schematic of the photoconductivity measurement set-up with a laser wavelength of " }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "=690 nm, laser power of " }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "=220 mW, spot diameter of " }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "≈700 nm, and chopping frequency of " }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": " =1.1 kHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724781&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724774&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724771&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "传统的红外光电探测器是由Ⅲ-V族半导体构成，吸收光子的能量与其带隙相匹配，吸收光的强度大小决定了输出电流的强弱。而下一代红外光电探测器系统需要具有宽的吸收带、快速响应和易于与硅集成的新材料的特点以满足宽带检测的需要。同时，越来越多的领域要求光电探测器满足轻质、可弯曲、柔性和透明的要求，从而能够更好地应用于手机、曲面数码相机、大面积可折叠显示器和其他电子系统等方面。由于具有机械强度大、拉伸性高的特点，石墨烯可以很好地用于制作柔性材料，并且由于单层石墨烯的厚度仅有0.35 nm，所以非常适合用于电子和光电子器件领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "然而，该类设计并没有解决器件光响应面积小的问题，由于他们所采用的是全覆盖的NiGr/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/graphene/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Si叠层结构，所以能够暴露在入射光下的石墨烯的面积非常小。如前文所述，响应面积小的问题同样存在于光伏效应机制下" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，尽管为了增强对入射光的吸收，研究人员已经尝试性地引入了微腔集成结构，但该方法需要外延生长缓冲层，存在着工艺复杂以及无法有效利用石墨烯层等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。直到2016年，Wang等开发了一种集成波导的石墨烯基光电探测器，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。研究者通过引入光波导微腔来增加光生电子寿命，从而很好地提高了响应度。因为在光伏效应下，光生电子空穴会在其寿命内被电极吸收，从而使得在光照下光电流会显著提升。而本项工作中并没有出现该现象，因此这一结果说明该器件响应度的提高并非由于光伏效应和光热电效应所导致。另外，根据Mott公式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(热电功率" }, { "name": "italic", "data": [ { "name": "text", "data": "S=" } ] }, { "name": "text", "data": " " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724784&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724788&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724786&type=" } } } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "为热能，" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "text", "data": "为电导率)，光热电效应下的光电流大小比实际值小了三个数量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。除此之外，通过对比光辐射热效应系数" }, { "name": "italic", "data": [ { "name": "text", "data": "β" } ] }, { "name": "text", "data": "(即电阻随着焦耳热的变化率)，可以证实为金属输运特性，而吸收系数也证明其为光辐射热效应。此外，计算结果表明，在室温下入射光为1 550 nm的近红外光照射时，理论响应度可达到4.6 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。然而，器件的实际响应度为0.11 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，这表明通过引入光波导能够增强对入射光的吸收率，从而有效提高器件的响应度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该工作有效地利用了石墨烯，最大限度地增加了石墨烯对光的吸收度。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "器件的彩色SEM俯视图，紫色部分为石墨烯，黄色部分为金属电极，粉色部分为未刻蚀硅，比例尺为10 μm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Color SEM image of the device top view. The purple part is graphene, the yellow part is metal electrode, the pink part is nonetched silicon, and the scale bar is 10 μm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724795&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724808&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724790&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2019年，Abdel等进一步阐释了辐射热效应，并提出栅控的作用是为了在狄拉克点处打开带隙，进而使得热阻值随着电子温度变化而变化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，进而加深了人们对光栅控效应的理解。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "综上，基于光辐射热效应下的石墨烯基光电探测器的优势在于响应波段宽、高灵敏度及低等效噪声功率，这得益于其小的热容和弱电子-声子耦合作用。当前对于该机制的机理有待进一步探究。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "基于光热电效应下的石墨烯基光电探测器" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "光热电效应可拆分为光热转换和热电效应。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，入射光照射在器件的某一侧，器件在吸收这一侧的光子后升温，与另外一侧形成温差(Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": ")，从而驱动电荷载流子从热端到冷端发生定向扩散，形成电位差(Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "U" } ] }, { "name": "text", "data": ")。这个过程被称为塞贝克(Seebeck)效应(热电效应)，其中塞贝克系数被定义为Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "U" } ] }, { "name": "text", "data": "与Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "的比值" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "光热电效应下光电转化过程示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "Schematic diagram of photoelectric conversion process under photothermoelectric effect" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724810&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724814&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724798&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2011年，Lemme等首次制备出了基于光热电效应的光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。他们利用顶栅电极条带将石墨烯分为左右两个部分，通过施加栅压来调控顶栅左右两边的塞贝克系数差异，再通过可见光扫描光束产生温度差异(如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示)。结果显示其最高响应度只有不到1 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。相比于2009年Xia等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备出的首个基于光伏效应的光电探测器，其在响应度方面较低(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "=6.1 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，但是在量子效率方面(内量子效率(IQE)=35%，外量子效率(EQE)=2.5%)要比前者(IQE=10%,EQE=0.5%)高出数倍，这表明基于光热电效应的石墨烯基光电探测器仍具有很大的发展空间。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "基于光热电效应下的顶栅石墨烯光电探测器器件简图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Schematic diagram of top grid graphene photodetector based on photo-thermoelectric effect" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724801&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724805&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724803&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了保证不同区域的温度免受基底的干扰， 2013年，Freitag等将事先对不同区域进行不同类型掺杂的石墨烯作为沟道材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并将石墨烯悬空以减少基底对石墨烯光电特性的影响。结果发现，响应度最高值出现在P掺和N掺区域的结合部分，约为7.5 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，相比于之前Lemme等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的结果有了显著的提高，但响应范围还仍局限于可见光波段。为了提升在长波段的响应度，研究者们又提出了使用混合结构来提升增益的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该结构在后文提到的光栅控效应中得到了广泛应用，但不可避免地会牺牲载流子迁移率，降低响应速度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2014年，马里兰大学Cai等采用非对称电极结构成功地将石墨烯光热电探测器的室温光谱响应扩展到太赫兹波段，并兼顾了响应度和响应速度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过设计能带不同的弯曲程度，得到不对称的塞贝克系数分布。金属电极可以作为冷端，产生温度梯度，最后可以得出一个非零的开路光电压。在波长为119 μm的光照下，光响应度为10 V·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，同时测量了1.54 μm红外辐射的光响应。尽管由于热载流子能量弛豫过程中光学声子散射的缘故，其响应度相对较低(~0.25 V·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，但仍然表明探测器在该波长下可以工作。此外，研究人员在完全悬浮石墨烯的基础上，施加双栅控电压，实现了基于光热电效应下的石墨烯基光电探测器在微波" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "到近红外波段" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "有效响应的目标。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了利用石墨烯不同区域的塞贝克系数差异产生光电流外，从微观上来看，当石墨烯的沟道长度远大于热载流子冷却所需的长度时，热载流子的扩散也可由晶格中的温差驱动，进而产生光电流。2014年，麻省理工学院Herring等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "证明，当沟道长度约为200 μm时，晶格梯度光热电效应起主要作用。在这种情况下，可以使用具有高光吸收度和低热导率的衬底来提高石墨烯热电偶的响应度。为此，Hsu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "设计了一种石墨烯热电堆，具体方法是使用STS-PECVD法在300 ℃下沉积了由100 nm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/500 nm SiN/100 nm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组成的电介质结，沉积膜的总应变保持在100 MPa以下。然后使用电子束曝光将PMMA在125 keV下进行曝光，使用热蒸镀在1.33×10" }, { "name": "sup", "data": [ { "name": "text", "data": "- 7" } ] }, { "name": "text", "data": " Pa(1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "- 6" } ] }, { "name": "text", "data": " mtorr)蒸发10 nm Ti/20 nm Pt，使用光刻胶硬掩膜(OCG-825)和CF" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "等离子体对释放通孔进行了图案化。其中沟道材料是采用LP-CVD法在铜箔上生长的石墨烯，并采用含FeCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "溶液湿法转移石墨烯" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中氮化硅(SiN)膜用于吸收辐射并加热石墨烯同质结的中心以产生电压输出。在波长为10.6 μm时，入射辐射的一半可以被SiN膜吸收。通过优化石墨烯同质结的掺杂分布和热隔离设计，热电堆的响应度高达7~9 V·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2020年，纽约大学Gosciniak等基于石墨烯的光热电效应，设计了长程介质加载表面等离子体激元(LR-DLSPP)结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示，通过将器件与波导耦合增加了石墨烯沟道长度，进而大大地提高了响应度。在1 550 nm入射光下" }, { "name": "italic", "data": [ { "name": "text", "data": "T=" } ] }, { "name": "text", "data": " 4 510 K，实现了200 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的响应度，为石墨烯基光电探测器在高温领域的应用提供了宝贵经验。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "(a)基于长程介质加载表面等离子体激元(LR-DLSPP)结构的石墨烯基光电探测器原理图，其中Semiconductor 1同Semiconductor 2的材质均为硅；(b)器件结构的横截面，显示出坡印廷矢量" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "X" } ] } ] }, { "name": "text", "data": "在外电极方向上的电场分布；(c)长程介质加载表面等离子体激元(LR-DLSPP)结构下的平面内电场分量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram of graphene photodetector based on long-range dielectric loaded surface plasmon polariton(LR-DLSPP) structure. Here Semiconductor 1 and Semiconductor 2 are taken as Si. (b)Cross section of the device structure, showing the electric field distribution in the direction of the external electrode displayed by the Boyntin vector " }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "X" } ] } ] }, { "name": "text", "data": ". (c)In plane electric field component of long range dielectric loaded surface plasmon polariton(LR-DLSPP) structure" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724825&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724831&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724821&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "基于光热电效应下的石墨烯基光电探测器要求不同区域具有不同的塞贝克系数来产生所需要的电势差。尽管研究人员一度通过栅控、掺杂的方法实现了对宏观石墨烯沟道内、石墨烯-电极之间的电势差的调控，以及通过悬空石墨烯减少基底产生热传导的方法来保证不同区域内的温差，但总体而言响应度仍处在偏低的水平。直到研究人员从更为微观的热载流子冷却的角度来考虑，提出了通过增加石墨烯沟道的长度来实现对热载流子晶格冷却梯度的构建以增大热载流子和晶格之间的温差的方法后，终于实现了响应度的大幅提高。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.4" } ], "title": [ { "name": "text", "data": "基于等离子体辅助探测的研究进展" } ], "level": "2", "id": "s2d" } }, { "name": "p", "data": [ { "name": "text", "data": "等离子体技术的应用在这里是指应用光子和电子耦合时，电磁波与等离子体材料、介电介质界面之间发生相互作用，从而产生表面等离子体激元(" }, { "name": "italic", "data": [ { "name": "text", "data": "SPPs" } ] }, { "name": "text", "data": ")并引发的表面等离子体共振(" }, { "name": "italic", "data": [ { "name": "text", "data": "SPR" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。等离子体技术的应用可以超过衍射极限" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，进而有效提高光电探测器性能，这些现象在生物学领域、化学、气体传感中的图像传感和光通信设备等领域得到了广泛的应用。对于等离子波辅助效应主导的光电探测器中沟道材料的选择，除了石墨烯外还有诸如" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "InSe" } ] }, { "name": "text", "data": "等二维材料。然而到目前为止，在器件结构多样性方面，" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "InSe" } ] }, { "name": "text", "data": "一般与金属周期性结构耦合，而石墨烯则可以和纳米带、金属周期性结构、金属-绝缘-金属(" }, { "name": "italic", "data": [ { "name": "text", "data": "MIM" } ] }, { "name": "text", "data": ")单元等多种结构耦合；同时，当前" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "InSe" } ] }, { "name": "text", "data": "只限于部分可见光波段，且响应度相比于同波段光电探测器优势并不明显，因此基于这两种材料的光电探测器易被替代" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。相比之下，在等离子波辅助机制主导下的石墨烯基光电探测器可探测到太赫兹波段的入射光，这是其独特的优势。基于等离子波辅助机制的石墨烯基光电探测器不仅在太赫兹光探测领域发挥重要的作用，还可用于对谷电子学、石墨烯等离子体和" }, { "name": "italic", "data": [ { "name": "text", "data": "Moiré" } ] }, { "name": "text", "data": "超晶格方向的理论探究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.4.1" } ], "title": [ { "name": "text", "data": "基于石墨烯纳米带的等离子体辅助光电探测器" } ], "level": "3", "id": "s2d1" } }, { "name": "p", "data": [ { "name": "text", "data": "由于入射光不能直接有效地同大面积石墨烯表面等离子体激元耦合，人们利用石墨烯纳米带(" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": ")或微型阵列结构来激发石墨烯的表面等离子体激元，进而提高" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "基光电探测器的响应度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。这里石墨烯是利用甲烷通过化学气相沉积在铜箔上生长得到的。由于碳在铜中的溶解度低，这一过程具有自限性，可以得到单层石墨烯的覆盖率超过95%。在" }, { "name": "italic", "data": [ { "name": "text", "data": "PMMA" } ] }, { "name": "text", "data": "沉积后，用刻蚀剂" }, { "name": "italic", "data": [ { "name": "text", "data": "CE" } ] }, { "name": "text", "data": "200湿法对铜进行溶解，附着在" }, { "name": "italic", "data": [ { "name": "text", "data": "PMMA" } ] }, { "name": "text", "data": "上的石墨烯被转移到具有90 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "厚 " }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "覆盖的硅片上；随后利用电子束光刻技术在石墨烯顶部制备了" }, { "name": "italic", "data": [ { "name": "text", "data": "Ti/Pd/Au" } ] }, { "name": "text", "data": "电极；最后，利用电子束光刻、剥离和氧等离子体将石墨烯刻蚀成纳米带" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "通过来自可调谐量子级联激光器的中红外(脉冲为100 " }, { "name": "italic", "data": [ { "name": "text", "data": "kHz" } ] }, { "name": "text", "data": ")打到由" }, { "name": "italic", "data": [ { "name": "text", "data": "ZnSe" } ] }, { "name": "text", "data": "物镜聚焦到以" }, { "name": "italic", "data": [ { "name": "text", "data": "GNR" } ] }, { "name": "text", "data": "阵列探测器为中心的20 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "text", "data": "光斑中。在漏电极上施加V" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "D" } ] } ] }, { "name": "text", "data": "=-8 " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "的直流偏压。直流和交流电信号在源极由偏压三通分离，并传输到前置放大器(" }, { "name": "italic", "data": [ { "name": "text", "data": "DC" } ] }, { "name": "text", "data": ") 或锁相放大器(" }, { "name": "italic", "data": [ { "name": "text", "data": "AC" } ] }, { "name": "text", "data": ")分别测量直流传输电流或交流光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "Mid-IR radiation from a tunable quantum cascade laser, pulsed at 100 kHz, is focused by a ZnSe objective into a 20 μm spot centered on the GNR array detector. A DC bias on the order of V" }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "=-8 V is applied at the drain contact. DC and AC electrical signals are separated on the source side by a bias tee and sent to either a preamplifier(DC) or a lock-in amplifier(AC) to measure the DC transport current or AC photocurrent, respectively" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724838&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724853&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724837&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "转移在" }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "Si" } ] }, { "name": "text", "data": "衬底上的" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "可以通过二氧化硅产生的声子激元与石墨烯表面等离子体激元耦合，利用二氧化硅声子模式中反交叉现象，能够实现二氧化硅声子-石墨烯等离子体相互作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } } ], "rid": [ "R34", "R35" ], "text": "34-35", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这种耦合引起的升温幅度是传统石墨烯红外探测器的四倍。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，可以通过改变外加栅压来改变" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "载流子浓度，从而调控其费米能级，提高输出光电流。并且外加栅压还有助于提高增益带宽。" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "的表面等离子体激元还表现出极化依赖性。在该工作中，研究人员仅使用垂直于" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "轴的电场分量有效地实现了光电流的增强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "理论上讲，基于" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "的光电探测器也可以在太赫兹波段有着不错的表现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。覆盖" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "的氧化铪具有很高的k值，在氧化铪的覆盖下石墨烯载流子散射降低，使得石墨烯中载流子持续保持高迁移率，进而可以在室温下进行从可见区域到中红外区域的光电探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。并且在室温、中红外波段下，基于表面等离子体辅助效应，采用" }, { "name": "italic", "data": [ { "name": "text", "data": "GNRs" } ] }, { "name": "text", "data": "与纳米盘结合结构的光电探测器同样具备优异的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.4.2" } ], "title": [ { "name": "text", "data": "石墨烯与基于微周期结构集成的光电探测器" } ], "level": "3", "id": "s2d2" } }, { "name": "p", "data": [ { "name": "text", "data": "通过石墨烯与微周期结构的集成，如周期性金属图案和金属-绝缘-金属(" }, { "name": "italic", "data": [ { "name": "text", "data": "MIM" } ] }, { "name": "text", "data": ")单元的集成，可以显著增强石墨烯基光电探测器的响应度以及实现波长和偏振选择功能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } } ], "rid": [ "R39", "R40", "R41" ], "text": "39-41", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些周期性金属图案包括一维金属条纹" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } } ], "rid": [ "R42", "R43" ], "text": "42-43", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": ")、二维金属微块、七聚体、金属分形图案、" }, { "name": "italic", "data": [ { "name": "text", "data": "Si" } ] }, { "name": "text", "data": "量子点等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } } ], "rid": [ "R44", "R45", "R46" ], "text": "44-46", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于石墨烯在等离子体结构附近的局域电磁共振受到限制，这些结构使石墨烯的光吸收性得到了显著增强，其响应度最大可提高800%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。金属纳米结构诱导的表面等离子体共振可以有效提高石墨烯基光电探测器的响应度。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "具有等离子体纳米结构的石墨烯器件扫描电子显微镜显微照片。(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")器件的整体图像，石墨烯：蓝色，" }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(300 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": ")：紫色，" }, { "name": "italic", "data": [ { "name": "text", "data": "Ti/Au" } ] }, { "name": "text", "data": "电极：黄色，比例尺，20 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "text", "data": ";(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")~(" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ")测试不同电极旁等离子体纳米结构，标出L和" }, { "name": "italic", "data": [ { "name": "text", "data": "TR" } ] }, { "name": "text", "data": "入射光偏振，比例尺1 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 9" } ], "title": [ { "name": "text", "data": "Scanning electron microscopy micrographs of the graphene devices with plasmonic nanostructures. (a)An overall image of one of our devices(in false colors). Blue, graphene; purple, SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(300 nm); yellow, Ti/Au electrodes. Scale bar, 20 μm. (b)-(d)Blow up of contacts with various tested plasmonic nanostructures(in false colors). L and TR incident light polarizations are indicated. Scale bar, 1 μm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724855&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724846&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724845&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "除了通过局域表面等离子体共振增强石墨烯的吸光率外，室温下金属纳米结构引起的热电效应同样可以提高响应度。使用基于等离子体结构来提高石墨烯响应度的另一种方法是将等离子体波导" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } } ], "rid": [ "R47", "R48" ], "text": "47-48", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "或纳米隙结构集成到传感器中" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。具有窄间隙的等离子体结构可以诱导间隙共振模式，以增强吸收。目前，大多数基于石墨烯的光学传感器都是单像素器件。尽管仍存在一些挑战，但在不久的将来，上述技术有望被广泛用于图像传感器方面" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } } ], "rid": [ "R50", "R51", "R52" ], "text": "50-52", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.4.3" } ], "title": [ { "name": "text", "data": "用于探测太赫兹波段的其他结构" } ], "level": "3", "id": "s2d3" } }, { "name": "p", "data": [ { "name": "text", "data": "无论是石墨烯纳米带还是石墨烯-周期性集成结构，其可探测范围都在中红外波段。为了进一步探测更低频率的波段，可以引入等离子体波辅助机制。" }, { "name": "italic", "data": [ { "name": "text", "data": "Dyakonov" } ] }, { "name": "text", "data": "等于1996年发现，纳米级场效应晶体管能够通过等离子体波整流检测到太赫兹辐射，直流输出信号是对集体载流子浓度振荡(等离子体波)的响应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这是因为源和栅极之间的电磁波耦合(在源发射的等离子体波)沿通道驱动产生了纵向电场" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "为基于" }, { "name": "italic", "data": [ { "name": "text", "data": "Dyakonov" } ] }, { "name": "text", "data": "等提出的机制在室温下进行的太赫兹波段光电探测器示意图，器件结构是基于周期性天线耦合的石墨烯场效应晶体管。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "单层石墨烯上等离子天线示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 10" } ], "title": [ { "name": "text", "data": "Schematic diagram of plasma antenna on single-layer graphene" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724848&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724851&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724849&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "　2014年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Spirito" } ] }, { "name": "text", "data": "等成功地制备了基于等离子体波辅助机制的光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，通过采用埋栅结构，在太赫兹波段(1 000 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "text", "data": ")，器件响应度达到了1.2 " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，等效噪声功率(" }, { "name": "italic", "data": [ { "name": "text", "data": "NEP" } ] }, { "name": "text", "data": ")为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-9" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "Hz" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1/2" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在利用双层石墨烯进行太赫兹波段探测方面，" }, { "name": "italic", "data": [ { "name": "text", "data": "Bandurin" } ] }, { "name": "text", "data": " 等做了综述" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "所示，研究者采用天线耦合石墨烯晶体管结构，通过法布里-珀罗腔和整流元件辅助等离子体激元共振检测太赫兹辐射，并比对了在不同温度下响应度随着栅极电压的变化情况。" }, { "name": "xref", "data": { "text": "图11(a)、(b)", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")、(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")" } ] } }, { "name": "text", "data": "分别代表不同频率入射光的探测结果，清楚地显示出宽带和共振检测机制之间的差异。该结果也同时证明了共振响应是石墨烯器件中的一种普遍现象，且与将交流电场整流为直流光电压背后的物理机制无关。通过非线性校正可以进一步确定响应度的增加情况，研究者们利用该结构发现了在双层石墨烯/" }, { "name": "italic", "data": [ { "name": "text", "data": "hBN" } ] }, { "name": "text", "data": "超晶格内" }, { "name": "italic", "data": [ { "name": "text", "data": "Moiré" } ] }, { "name": "text", "data": "微带上的低能等离子激元" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这种方法对研究磁微带中的集体模式有很大的帮助，近年来受到了广泛关注。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "双层石墨烯的太赫兹光波段探测。(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")在入射光频f=130 " }, { "name": "italic", "data": [ { "name": "text", "data": "GHz" } ] }, { "name": "text", "data": "时，3种温度(300,77,10 " }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": ")下测量的响应度。橙色矩形框显示了一个响应度的变化，该变化源于" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "掺杂石墨烯通道和靠近触点的" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "掺杂区域之间的" }, { "name": "italic", "data": [ { "name": "text", "data": "p-n" } ] }, { "name": "text", "data": "结处入射辐射的整流。右上插图：" }, { "name": "italic", "data": [ { "name": "text", "data": "FET" } ] }, { "name": "text", "data": "系数F作为同一温度T下顶栅电压V" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "g" } ] } ] }, { "name": "text", "data": "的函数；左下插图：最大响应度R" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "max" } ] } ] }, { "name": "text", "data": "作为温度T的函数。(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")入射光频率f=2 " }, { "name": "italic", "data": [ { "name": "text", "data": "THz" } ] }, { "name": "text", "data": "时，温度为10 " }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "时，响应度同顶栅电压之间的函数关系。右上插图：显示了电子掺杂的光电电压的放大区域，其中共振用黑色箭头表示；左下插图：液氮温度下的共振响应率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 11" } ], "title": [ { "name": "text", "data": "Terahertz optical band detection of bilayer graphene. (a)The responsivity is measured at three temperatures(300, 77, 10 K) at incident light frequency f=130 GHz. The orange rectangle shows a shift in response due to the rectification of incident radiation at the p-n junction between the p-doped graphene channel and the n-doped region near the contact. Upper right inset: FET coefficient F as a function of V" }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": " at the same temperature T. Below left inset: maximum response R" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": " as a function of temperature T. (b)When the incident light frequency f=2 THz and the temperature is 10 K, the functional relationship between the response and the top grid voltage. Upper right inset: shows the amplified region of electron doped photovoltaic voltage, in which the resonance is represented by a black arrow. Below left inset: resonance response rate at liquid nitrogen temperature" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724884&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724876&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724886&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "　总之，对于基于等离子辅助机制的石墨烯基光电探测器而言，其主要指标依赖于器件结构，无论是纳米带结构、微周期耦合结构还是用于探测太赫兹波段的其他结构，其本质都是将入射光转换为等离子体共振。这同时反映了其局限性，即只能在器件结构的共振波长下提高响应度，然而共振波长可通过改变器件的几何结构来调控，所以其探测波长是单一的。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.5" } ], "title": [ { "name": "text", "data": "基于光栅控效应的进展" } ], "level": "2", "id": "s2e" } }, { "name": "p", "data": [ { "name": "text", "data": "光栅控效应是光致电导效应的特例，是指由于空穴或者电子被局域态所束缚时，产生一个额外的电场而表现出的和栅极电压一样对材料电导(电阻)较强的调控效应，因此光栅控效应是一种通过光致栅压来调节器件沟道电导的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } } ], "rid": [ "R85", "R86", "R87", "R88", "R89", "R90", "R91", "R92", "R93" ], "text": "85-93", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "光栅控效应的机理示意图如" }, { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。图中硅作为背栅电极，" }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为介电层。当硅栅极中的光激发电荷导致 " }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 界面处的电势(δV" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "PV" } ] } ] }, { "name": "text", "data": ")发生变化时，就会发生光栅控。因此要产生光栅控效应，就需要" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 界面处 " }, { "name": "italic", "data": [ { "name": "text", "data": "Si" } ] }, { "name": "text", "data": " 发生能带弯曲。" }, { "name": "italic", "data": [ { "name": "text", "data": "Si" } ] }, { "name": "text", "data": "能带的弯曲会提供一个电场，该电场将光激发所产生的电子-空穴对分开，并提供了一个势阱来捕获电子或空穴，从而产生电势差。" }, { "name": "xref", "data": { "text": "图12(a)", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")" } ] } }, { "name": "text", "data": "为器件制备完成后硅衬底能带弯曲示意图，初始能带弯曲为ϕ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "so" } ] } ] }, { "name": "text", "data": "=100~200 " }, { "name": "italic", "data": [ { "name": "text", "data": "mV" } ] }, { "name": "text", "data": ";" }, { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": " (" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")为在激光照射下，正氧化物电荷被束缚在界面处的光生电子部分屏蔽，从而降低了表面电势ϕ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "so" } ] } ] }, { "name": "text", "data": "→ϕ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "sΛ" } ] } ] }, { "name": "text", "data": "，产生光电压δV" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "PV" } ] } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "光栅控能带变化示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 12" } ], "title": [ { "name": "text", "data": "Schematic band diagrams showing band bending by photogating" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724890&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724894&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724893&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "当前基于光栅控效应主导的光电探测器材料主要有" }, { "name": "italic", "data": [ { "name": "text", "data": "ZnO" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "GaS" } ] }, { "name": "text", "data": "等，这些材料相比于石墨烯而言，具有可探测波段范围较窄且多仅限于紫外和可见光波段的问题。而该类石墨烯型器件则具有从可见光波段至中红外波段的较大响应范围，并且由于石墨烯能与量子点等其他二维材料进行有效的耦合，所以可以实现响应度大幅度提升等特点和优势，这都是传统光栅控效应材料所不具备的。再加上近年来石墨烯在大面积工业化制备工艺上的长足进步，使得基于光栅控效应下的石墨烯基光电探测器在成像装置方面的广泛应用未来可期" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.5.1" } ], "title": [ { "name": "text", "data": "基于纯石墨烯结构的应用进展" } ], "level": "3", "id": "s2e1" } }, { "name": "p", "data": [ { "name": "text", "data": "尽管早在2009年" }, { "name": "italic", "data": [ { "name": "text", "data": "Xia" } ] }, { "name": "text", "data": "等便在石墨烯基光电探测器光栅控领域进行了初步尝试" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是同传统的材料相比较，效果并不理想，响应度只有5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。这主要是因为石墨烯作为一种厚度只有0.35 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "的二维材料并不具备强的光吸收能力。而胶体量子点的宽带吸收可以补偿石墨烯有限的响应波段，从而增强石墨烯的吸光度，同时石墨烯的高载流子迁移率也一定程度上弥补了量子点迁移率低的不足" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "95", "type": "bibr", "rid": "R95", "data": [ { "name": "text", "data": "95" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } } ], "rid": [ "R95", "R96" ], "text": "95-96", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.5.2" } ], "title": [ { "name": "text", "data": "基于量子点/石墨烯混合结构的进展" } ], "level": "3", "id": "s2e2" } }, { "name": "p", "data": [ { "name": "text", "data": "2012年初，" }, { "name": "italic", "data": [ { "name": "text", "data": "Konstantatos" } ] }, { "name": "text", "data": "等开发了一种基于" }, { "name": "italic", "data": [ { "name": "text", "data": "PbS" } ] }, { "name": "text", "data": "量子点/石墨烯混合结构光电探测器，响应度达到了10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中单层/双层石墨烯的制备是通过机械剥离热解石墨获得，然后转移到" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(285 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": ")晶圆上，80 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "厚的" }, { "name": "italic", "data": [ { "name": "text", "data": "PbS" } ] }, { "name": "text", "data": "量子点薄膜是利用" }, { "name": "italic", "data": [ { "name": "text", "data": "PbS" } ] }, { "name": "text", "data": "胶体量子点通过逐层法旋涂涂膜方式制备的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图13", "type": "fig", "rid": "F13", "data": [ { "name": "text", "data": "图13" } ] } }, { "name": "text", "data": "所示，量子点中产生电子-空穴对，空穴被转移到石墨烯上，而电子被聚集在量子点层中，以此调节石墨烯的电导，这样即使在50 " }, { "name": "italic", "data": [ { "name": "text", "data": "fW" } ] }, { "name": "text", "data": "弱入射功率的情况下，也可以获得10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "的超高增益；并且增益带宽积也达到10" }, { "name": "sup", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "Hz" } ] }, { "name": "text", "data": "，整体性能可与通过苛刻而昂贵的分子束外延(" }, { "name": "italic", "data": [ { "name": "text", "data": "MBE" } ] }, { "name": "text", "data": ")生长的" }, { "name": "italic", "data": [ { "name": "text", "data": "Ⅲ-V" } ] }, { "name": "text", "data": "族材料光晶体管相媲美" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年" }, { "name": "italic", "data": [ { "name": "text", "data": "Sun" } ] }, { "name": "text", "data": "等报道了一种基于化学气相沉积(" }, { "name": "italic", "data": [ { "name": "text", "data": "CVD" } ] }, { "name": "text", "data": ")的石墨烯/量子点光电探测器，尽管响应度同样为10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，但由于该器件的基底是柔性材料，所以实现了器件可弯曲和耐磨的特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。凭借" }, { "name": "italic", "data": [ { "name": "text", "data": "CVD" } ] }, { "name": "text", "data": "法制备的优势，光栅控效应下的石墨烯光电柔性探测器原则上讲已经可以进行大规模工业化制备。" } ] }, { "name": "fig", "data": { "id": "F13", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图13" } ], "title": [ { "name": "text", "data": "石墨烯-量子点复合光电探测器。(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")石墨烯-量子点混合光电晶体管示意图，其中石墨烯薄片沉积在" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "结构上并涂有" }, { "name": "italic", "data": [ { "name": "text", "data": "PbS" } ] }, { "name": "text", "data": "量子点；(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")使用聚焦在 532 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "、功率为 1.7 " }, { "name": "italic", "data": [ { "name": "text", "data": "pW" } ] }, { "name": "text", "data": " 的激光束的空间光电流分布。当激光束扫过检测器表面时，记录光电流。空间分布图显示了在与石墨烯薄片重叠的量子点薄膜区域(V" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "SD" } ] } ] }, { "name": "text", "data": "=10 " }, { "name": "italic", "data": [ { "name": "text", "data": "mV" } ] }, { "name": "text", "data": ")处光电晶体管的大面积激发。插图：本研究中使用的石墨烯薄片与金电极接触形成光电晶体管的光学图像" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 13" } ], "title": [ { "name": "text", "data": "Hybrid graphene-quantum dot phototransistor. (a)Schematic of the graphene-quantum dot hybrid phototransistor, in which a graphene flake is deposited onto a Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " structure and coated with PbS quantum dots. (b)Spatial photocurrent profile using a laser beam focused at 532 nm with a power of 1.7 pW. The photocurrent was recorded as the laser beam being scanned across the surface of the detector. The spatial profile shows the large-area excitation of the phototransistor at the area of the quantum-dot film overlapping with the graphene flake(V" }, { "name": "sub", "data": [ { "name": "text", "data": "SD" } ] }, { "name": "text", "data": "=10 mV). Inset: optical image of the graphene flake used in this study in contact with the gold electrodes, forming the phototransistor" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724901&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724917&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724904&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2017年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Goossens" } ] }, { "name": "text", "data": "等基于光栅控增强机制开发了一种集成的量子点-石墨烯互补金属氧化物半导体(" }, { "name": "italic", "data": [ { "name": "text", "data": "CMOS" } ] }, { "name": "text", "data": ")图像传感器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这是首次将大面积二维材料与硅读取电路相结合，实现了具有388×288阵列光检测像素的" }, { "name": "italic", "data": [ { "name": "text", "data": "NIR-SWIR" } ] }, { "name": "text", "data": "数码相机。这一结果证明了光栅控效应下石墨烯基光电探测器在显像领域的重要应用价值。同时为了进一步拓宽探测波段范围，研究者随后又在量子点/石墨烯混合结构在宽波段检测方向做了大量的工作" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "99", "type": "bibr", "rid": "R99", "data": [ { "name": "text", "data": "99" } ] } } ], "rid": [ "R98", "R99" ], "text": "98-99", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.5.3" } ], "title": [ { "name": "text", "data": "以石墨烯为沟道的异质结构进展" } ], "level": "3", "id": "s2e3" } }, { "name": "p", "data": [ { "name": "text", "data": "由载流子寿命τ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] } ] }, { "name": "text", "data": "及载流子跃迁时长τ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] } ] }, { "name": "text", "data": "所决定的增益在很大程度上取决于载流子跃迁时长τ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] } ] }, { "name": "text", "data": "。而缩短沟道长度、增大偏置电压、提高载流子迁移率均能有效地缩短载流子跃迁时长τ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] } ] }, { "name": "text", "data": "。石墨烯具有非常高的迁移率，所以可以预测通过将石墨烯做成混合结构光电探测器的沟道能够有效地缩短跃迁时长 τ" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "t" } ] } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "103", "type": "bibr", "rid": "R103", "data": [ { "name": "text", "data": "103" } ] } } ], "rid": [ "R100", "R101", "R102", "R103" ], "text": "100-103", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。而量子点异质结构的高响应度与量子点的寿命密切相关，因此使用不同量子点的器件可能得到不同的响应速度。所以同时使用石墨烯和量子点的异质结构原则上可以同时实现高增益和响应速度的有效控制。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2013年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Roy" } ] }, { "name": "text", "data": "等将石墨烯作为沟道层、" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为栅控层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，通过施加负向背栅电压使" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/石墨烯界面处的能带对齐，从而使光生电子转移到石墨烯而空穴留在" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。结果显示，当入射光波长为635 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "时，在130 " }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "的温度下，该异质结构的响应度最高达到了10" }, { "name": "sup", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，即使是在室温下也可达到5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" }, { "name": "italic", "data": [ { "name": "text", "data": "Zhang" } ] }, { "name": "text", "data": "等也做了类似的基于石墨烯/" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的异质结构，光增益超过了10" }, { "name": "sup", "data": [ { "name": "text", "data": "8[" }, { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，显示出该方案良好的可重复性。2015年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Liu" } ] }, { "name": "text", "data": "等制作了碳纳米管-石墨烯异质结构光电探测器，实现了波段400~1 550 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "的有效光谱探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，光照之后I" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "ds" } ] } ] }, { "name": "text", "data": "-V" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "g" } ] } ] }, { "name": "text", "data": "曲线负向偏移，说明碳纳米管作为空穴陷阱层留住了大量的光生空穴从而实现了对石墨烯电导率的有效调节。该碳纳米管/石墨烯异质光电探测器的增益优于10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "。同年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Lee" } ] }, { "name": "text", "data": "等将石墨烯与光吸收材料" }, { "name": "italic", "data": [ { "name": "text", "data": "CH" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "NH" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "PBI" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿层结合起来" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "101", "type": "bibr", "rid": "R101", "data": [ { "name": "text", "data": "101" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，尽管该异质结构的有效探测范围仅限于可见光波段，但其具有优异的响应度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "石墨烯极薄的厚度限制了其对于入射光波长大于可见光波段的吸收能力，于是2014年" }, { "name": "italic", "data": [ { "name": "text", "data": "Liu" } ] }, { "name": "text", "data": "等尝试构建了石墨烯/" }, { "name": "italic", "data": [ { "name": "text", "data": "Ta" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "/石墨烯堆叠层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "103", "type": "bibr", "rid": "R103", "data": [ { "name": "text", "data": "103" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以增加石墨烯结构对光的吸收。其中使用的是转移到" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "衬底上通过" }, { "name": "italic", "data": [ { "name": "text", "data": "CVD" } ] }, { "name": "text", "data": "法制备在铜箔上的石墨烯。该工作中为制备石墨烯/" }, { "name": "italic", "data": [ { "name": "text", "data": "Ta" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "/石墨烯异质结，首先将石墨烯转移到具有285 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": " 厚" }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的" }, { "name": "italic", "data": [ { "name": "text", "data": "Si" } ] }, { "name": "text", "data": "片上，采用光刻法、石墨烯等离子体蚀刻法和金属剥离法制备背栅石墨烯晶体管；然后在样品上通过射频溅射5 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "厚的" }, { "name": "italic", "data": [ { "name": "text", "data": "Ta" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜，将石墨烯转移到作为隧穿势垒的" }, { "name": "italic", "data": [ { "name": "text", "data": "Ta" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "薄膜的顶部，再经过光刻、蚀刻和金属剥离工艺制备顶栅石墨烯晶体管" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "103", "type": "bibr", "rid": "R103", "data": [ { "name": "text", "data": "103" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在光照下，顶部单层石墨烯产生的光生电子进入底层，而光生空穴留在顶层，这对以" }, { "name": "italic", "data": [ { "name": "text", "data": "Ta" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "为材料的沟道层电导产生了很强的光栅控效应。在室温下，该结构对近红外-中红外(1.3~3.2 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "text", "data": ")波段的响应度高于1 " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。该结果说明光栅控效应在石墨烯基光电探测器的红外光检测方面仍具有较大的探索空间。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2021年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Yang" } ] }, { "name": "text", "data": "等采用" }, { "name": "italic", "data": [ { "name": "text", "data": "Ge/Graphene/CdS" } ] }, { "name": "text", "data": "结构，在保证高响应度的同时实现了双色光探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。具体结构如" }, { "name": "xref", "data": { "text": "图14", "type": "fig", "rid": "F14", "data": [ { "name": "text", "data": "图14" } ] } }, { "name": "text", "data": "所示。这一成果显示出基于石墨烯为沟道混合结构的光电探测器具备研究前景。" } ] }, { "name": "fig", "data": { "id": "F14", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图14" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "Ge/Graphene/CdS" } ] }, { "name": "text", "data": "结构的石墨烯基光电探测器简图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 14" } ], "title": [ { "name": "text", "data": "Schematic diagram of graphene photodetector with Ge/graphene/CdS structure" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724920&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724930&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724912&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.5.4" } ], "title": [ { "name": "text", "data": "基于界面栅/门控效应的混合结构进展" } ], "level": "3", "id": "s2e4" } }, { "name": "p", "data": [ { "name": "text", "data": "利用界面栅(门)控效应是这几年研究的热点，它是指利用界面效应对光响应的调控。一般这样的器件中光响应区域限于层与层交界处，虽然器件利用率下降，但是光响应度却可以大大提高。2016年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Guo" } ] }, { "name": "text", "data": "等使用" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "型轻掺杂的硅作为单层石墨烯的衬底和栅极" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "105", "type": "bibr", "rid": "R105", "data": [ { "name": "text", "data": "105" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图15", "type": "fig", "rid": "F15", "data": [ { "name": "text", "data": "图15" } ] } }, { "name": "text", "data": "所示。利用在" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "界面处向下弯曲的能带聚集大量空穴，从而在界面附近形成内建电场，这就相当于在石墨烯沟道上施加了一个负向栅压，进而可以实现对光生电子-空穴对的有效分离。结果表明，该光电探测器具有优异的性能，它能够对小于1 " }, { "name": "italic", "data": [ { "name": "text", "data": "nW" } ] }, { "name": "text", "data": "的光信号进行高灵敏度探测。这里选择轻" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "掺杂硅原因在于重掺硅会有效地缩短过量电子的寿命" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F15", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图15" } ], "title": [ { "name": "text", "data": "基于界面栅/门效应下的石墨烯基光电探测器。(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")具有正局域态(qΦ" }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": ")的" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "型轻掺杂" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "衬底上的界面能带图。光生电子(蓝点)在界面处的累积导致在光照下产生额外的负电压，将费米能级(E" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "Gr" } ] }, { "name": "text", "data": ")" } ] }, { "name": "text", "data": ")降低到新位置(E'" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "Gr" } ] }, { "name": "text", "data": ")" } ] }, { "name": "text", "data": ")，从而在石墨烯中形成光诱导的" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "型掺杂；(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "型轻掺杂" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "衬底上石墨烯基光电探测器的剖面图以及载流子迁移方向" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "105", "type": "bibr", "rid": "R105", "data": [ { "name": "text", "data": "105" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 15" } ], "title": [ { "name": "text", "data": "Graphene photodetector based on interface gating effect. (a)With positive local state(qΦ" }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": ") on light p-doped Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " substrate. The accumulation of photogenerated electrons(blue dots) at the interface leads to the generation of additional negative voltage under light, which lower the Fermi level(E" }, { "name": "sub", "data": [ { "name": "text", "data": "F(Gr)" } ] }, { "name": "text", "data": ")to its new position(E'" }, { "name": "sub", "data": [ { "name": "text", "data": "F(Gr)" } ] }, { "name": "text", "data": "), so as to form photoinduced p-type doping in graphene. (b)Cross section of graphene photodetector on light p-doped Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " substrate and carrier migration direction" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "105", "type": "bibr", "rid": "R105", "data": [ { "name": "text", "data": "105" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724932&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724938&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724935&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究基于光栅控效应下的石墨烯基光电探测器对于可见光以外波段的探测情况， 同时尽可能消除由于施加栅压带来的暗电流， 2019年，日本科学家" }, { "name": "italic", "data": [ { "name": "text", "data": "Shoichiro" } ] }, { "name": "text", "data": "等探究了位于正硅酸乙酯/锑化铟上的单层石墨烯在中红外波段的光电特性(" }, { "name": "xref", "data": { "text": "图16", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "图16" } ] } }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。实现了石墨烯基光电探测器的中红外波段光响应14.9 " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，比之前结果大两个数量级。同时显示在150 " }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "以及低于该温度的条件下该器件均有显著的光响应，如" }, { "name": "xref", "data": { "text": "图16(a)", "type": "fig", "rid": "F16", "data": [ { "name": "text", "data": "图16(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F16", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图16" } ], "title": [ { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")在黑暗和4.6 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "text", "data": "脉冲激光辐照下，器件的漏电流和漏电压(I" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "d" } ] } ] }, { "name": "text", "data": "-V" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "d" } ] } ] }, { "name": "text", "data": ")特性曲线；(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")器件在4.6 " }, { "name": "italic", "data": [ { "name": "text", "data": "μm" } ] }, { "name": "text", "data": "脉冲激光辐照下的漏电流-时间(I" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "d" } ] } ] }, { "name": "italic", "data": [ { "name": "text", "data": "-time" } ] }, { "name": "text", "data": ")特性曲线，脉冲周期：开启时间0.8 " }, { "name": "italic", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "，关闭时间1.2 " }, { "name": "italic", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": ";(" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": ")开/关比(I" }, { "name": "sub", "data": [ { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "photo" } ] } ] }, { "name": "text", "data": "/I" }, { "name": "sub", "data": [ { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "dark" } ] } ] }, { "name": "text", "data": ")与漏电压V" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "d" } ] } ] }, { "name": "text", "data": "的函数关系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 16" } ], "title": [ { "name": "text", "data": "(a)Drain current and drain voltage(I" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "-V" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ") characteristic curves of the device under dark and 4.6 μm pulse laser irradiation conditions. (b)Drain current-time(I" }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "-time) characteristics of the device under 4.6 μm pulsed laser irradiation. Pulse periods: 0.8 s ON, 1.2 s OFF. (c)ON/OFF ratio(I" }, { "name": "sub", "data": [ { "name": "text", "data": " photo" } ] }, { "name": "text", "data": "/I" }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": ") of the device as a function of drain voltage V" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "d" } ] } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724944&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724960&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724946&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "相较于其他类型的石墨烯光电探测器，高响应度是光栅控效应石墨烯基光电探测器最大的优势，但可探测的波长却仍然局限于可见光到中红外波段。值得说明的是，即便在近红外-中红外波段，要想同时得到高的响应度和较大的增益，对该类探测器而言也需要借助低维复合结构才能实现。一部分原因在于单层石墨烯本身并不具备较好的宽波段范围吸收率，而增加石墨烯的层数又势必会降低其载流子迁移率。无论是量子点掺杂还是基于界面栅/门控效应的异质结构掺杂均可带来较高的响应度，但却会使得石墨烯载流子迁移率降低，从而牺牲了响应速度。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.6" } ], "title": [ { "name": "text", "data": "基于光电导效应的石墨烯光电探测器" } ], "level": "2", "id": "s2f" } }, { "name": "p", "data": [ { "name": "text", "data": "与光伏效应中由于内电场实现电子-空穴对分离不同，光电导效应是通过外加偏压来使电子-空穴对分离" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在入射光照射下，探测器吸收光子产生电子-空穴对，并在外加偏压的作用下使其分离，这时获得的光电流大于暗电流。光照后，器件电导会增加一段时间，该时间称为持续时间。光电导与暗电导之间的差异反映着光照水平。如果持续时间超过载流子通过器件的传输时间，则被吸收的光子所产生的电荷都会对光电流有所贡献" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "108", "type": "bibr", "rid": "R108", "data": [ { "name": "text", "data": "108" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而持续时间本身是由电子-空穴对复合时间所决定，因此缺陷存在有助于延长持续时间。此外，这些缺陷不仅可以延迟带间复合还能够捕获电荷，因此对光电导增益提高尤为重要(" }, { "name": "xref", "data": { "text": "图17", "type": "fig", "rid": "F17", "data": [ { "name": "text", "data": "图17" } ] } }, { "name": "text", "data": ")。" } ] }, { "name": "fig", "data": { "id": "F17", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图17" } ], "title": [ { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")在光电二极管中利用电子和空穴的漂移和扩散，其中电子-空穴对通过由带空间弯曲表示的内置电场的作用而分离。在光吸收时，光子的能量转移到半导体中的电子(实心圆圈)，将其提升到导带(上黑线)并在价带(下黑线)留下一个空穴(空心圆圈)。(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")在光电导体中，一种类型的载流子被捕获，而另一种在电场的影响下循环(在该描述中，电子被捕获)。红色箭头描绘了电子从导带捕获到相关陷阱状态。如果空穴寿命超过空穴穿过器件所需的时间，那么被束缚电子的持续时间确保空穴可以通过外部电路多次循环，从而获得增益" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "108", "type": "bibr", "rid": "R108", "data": [ { "name": "text", "data": "108" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 17" } ], "title": [ { "name": "text", "data": "(a)Drift and diffusion of both electrons and holes are exploited in photodiodes, in which electron-hole pairs are separated by the action of a built-in electric field represented by the spatial bending of the bands. On light absorption, the energy of the photon is transferred to an electron(filled circles) in the semiconductor, elevating it to the conduction band(upper black line) and leaving behind a hole(open circles) in the valence band(lower black line). (b)In a photoconductor, one type of carrier is trapped while the other circulates under the influence of an electric field(electrons are trapped in this depiction). Red arrows depict the capture of electrons from the conduction band into associated trap states. If the hole lifetime exceeds the time it takes for the hole to transit the device, then the long lifetime of the trapped electrons ensures that holes can circulate through an external circuit many times, resulting in gain" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "108", "type": "bibr", "rid": "R108", "data": [ { "name": "text", "data": "108" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724947&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724965&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724949&type=" } ] } }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "Giovannetti" } ] }, { "name": "text", "data": "等在2008年试图从理论上解释石墨烯沟道内的光电导效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "109", "type": "bibr", "rid": "R109", "data": [ { "name": "text", "data": "109" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，他们认为在石墨烯沟道区域内发生的光电转换效应同金属-石墨烯结之间的空间距离有特定的关系，即距离金属-石墨烯结越近光电转换效应越强，反之距离金属-石墨烯结越远则该效应就越弱。同一年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Lee" } ] }, { "name": "text", "data": "等使用扫描光电流显微镜从实验上分析了石墨烯沟道内光电流空间分布情况" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "110", "type": "bibr", "rid": "R110", "data": [ { "name": "text", "data": "110" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并验证了" }, { "name": "italic", "data": [ { "name": "text", "data": "Giovannetti" } ] }, { "name": "text", "data": "等的结论。2010年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Peter" } ] }, { "name": "text", "data": "和他的同事对石墨烯沟道进行分区掺杂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，部分石墨烯通过氧离子进行" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "掺杂，另外一部分通过聚乙基亚胺水溶液进行" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "掺杂，在波长为633 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "的激光下获得了扫描光电流图像，并发现在外部偏压为零的情况下通过光照得到了与金属位置相依赖的异常高的光电流。他们将这种光响应归因于不同掺杂区域的费米能级差在" }, { "name": "italic", "data": [ { "name": "text", "data": "p-n" } ] }, { "name": "text", "data": "结界面中形成的内置偏压。除了通过分区掺杂形成能级差进而产生内置电压外，研究人员还尝试了利用异质结结构来实现石墨烯的光电导效应。2012年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Lee" } ] }, { "name": "text", "data": "等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "111", "type": "bibr", "rid": "R111", "data": [ { "name": "text", "data": "111" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用石墨烯" }, { "name": "italic", "data": [ { "name": "text", "data": "-CdS" } ] }, { "name": "text", "data": "纳米线异质结实现了石墨烯的光电导效应。如" }, { "name": "xref", "data": { "text": "图18", "type": "fig", "rid": "F18", "data": [ { "name": "text", "data": "图18" } ] } }, { "name": "text", "data": "所示，作者通过在石墨烯沟道表面垂直生长大量" }, { "name": "italic", "data": [ { "name": "text", "data": "CdS" } ] }, { "name": "text", "data": "纳米线，在石墨烯沟道内产生垂直的内置电场，相比于之前在石墨烯水平方向分区掺杂，该方法显著提高了光电流。除了具备良好的响应度外，还具备较高的响应速度，有望在高速光电设备方向应用。" } ] }, { "name": "fig", "data": { "id": "F18", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图18" } ], "title": [ { "name": "text", "data": "基于石墨烯" }, { "name": "italic", "data": [ { "name": "text", "data": "-CdS NW" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "Nano-wire" } ] }, { "name": "text", "data": ")混合结构的高性能光电导通道制备过程示意图。(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")将单层石墨烯片转移到" }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 衬底上；(" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": ")在石墨烯上沉积金催化剂层；(" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": ")使用真空炉在金催化剂上生长 " }, { "name": "italic", "data": [ { "name": "text", "data": "CdS" } ] }, { "name": "text", "data": " 纳米线；(" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ")制备沉积在石墨烯片的两个边缘上的金属电极" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "111", "type": "bibr", "rid": "R111", "data": [ { "name": "text", "data": "111" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 18" } ], "title": [ { "name": "text", "data": "Schematic diagram depicting the fabrication process of high performance photoconductive channels based on graphene-CdS NW hybrid structures. (a)Transferring of a single-layer graphene sheet onto a SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " substrate. (b)Deposition of an Au catalyst layer on the graphene. (c)Growth of CdS NWs on the Au catalyst using a vacuum furnace. (d)Fabrication of metal electrodes which were deposited on the both edges of a graphene sheet" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "111", "type": "bibr", "rid": "R111", "data": [ { "name": "text", "data": "111" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724966&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724969&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724953&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "除了在石墨烯沟道表面进行改性外，人们还尝试采用不同的衬底来调节石墨烯的光电导效应。 2018年，" }, { "name": "italic", "data": [ { "name": "text", "data": "Gorecki" } ] }, { "name": "text", "data": "等设计了将石墨烯沟道置于掺铁铌酸锂衬底之上的结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "112", "type": "bibr", "rid": "R112", "data": [ { "name": "text", "data": "112" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，该器件相比于传统的" }, { "name": "italic", "data": [ { "name": "text", "data": "Si/SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "衬底结构其电流密度得到了显著的提高。在保证良好的响应度的基础上，研究人员还着手优化其他光电导效应下石墨烯光电探测器的参数。如" }, { "name": "xref", "data": { "text": "图19", "type": "fig", "rid": "F19", "data": [ { "name": "text", "data": "图19" } ] } }, { "name": "text", "data": "所示， 2019年" }, { "name": "italic", "data": [ { "name": "text", "data": "Li" } ] }, { "name": "text", "data": "等采用裁剪石墨烯沟道的方案" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "113", "type": "bibr", "rid": "R113", "data": [ { "name": "text", "data": "113" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使用" }, { "name": "italic", "data": [ { "name": "text", "data": "Ga" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶" }, { "name": "italic", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "作为衬底， 充分利用石墨烯同" }, { "name": "italic", "data": [ { "name": "text", "data": "Ga" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶" }, { "name": "italic", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "之间能级差带来的内置电场。 这样不仅保证了高响应度，同时还在5 " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "外加栅压下获得了暗电流仅为1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-11" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "的结果，显示出其卓越的开关比。" } ] }, { "name": "fig", "data": { "id": "F19", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图19" } ], "title": [ { "name": "text", "data": "器件制备过程示意图。通过常用的湿转移方法将石墨烯(" }, { "name": "italic", "data": [ { "name": "text", "data": "Gr" } ] }, { "name": "text", "data": ")转移到" }, { "name": "italic", "data": [ { "name": "text", "data": "Si" } ] }, { "name": "text", "data": "衬底的" }, { "name": "italic", "data": [ { "name": "text", "data": "SiO" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表面；再在标准光刻工艺之后，通过磁控溅射将用于探针测试的" }, { "name": "italic", "data": [ { "name": "text", "data": "Ti/Au" } ] }, { "name": "text", "data": "电极沉积在" }, { "name": "italic", "data": [ { "name": "text", "data": "Gr" } ] }, { "name": "text", "data": "上；最后，金属和" }, { "name": "italic", "data": [ { "name": "text", "data": "Gr" } ] }, { "name": "text", "data": "电极都通过" }, { "name": "italic", "data": [ { "name": "text", "data": "PMMA" } ] }, { "name": "text", "data": "的简便方法转移到" }, { "name": "italic", "data": [ { "name": "text", "data": "Ga" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "O" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶" }, { "name": "italic", "data": [ { "name": "text", "data": "Zn" } ] }, { "name": "text", "data": "薄膜上" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "113", "type": "bibr", "rid": "R113", "data": [ { "name": "text", "data": "113" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 19" } ], "title": [ { "name": "text", "data": "Schematic illustration of the preparation process. In the first step, graphene(Gr) is transferred onto the SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " surface of the Si substrate by a commonly used wet transfer method. Ti/Au electrodes which are used for probe testing are deposited on Gr by magnetron sputtering after a standard photolithography process. Finally, both metal and Gr electrodes are transferred onto a Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶Zn film by a facile method with PMMA" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "113", "type": "bibr", "rid": "R113", "data": [ { "name": "text", "data": "113" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724955&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724974&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724973&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于光电导效应多发生在金属接触区域外，因此在缺少异质结内置电场的条件下只能通过石墨烯改性来实现局域内置电场的调控，从而达到对光生电子-空穴对分离的目的。其他二维材料如" }, { "name": "italic", "data": [ { "name": "text", "data": "WS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "MoS" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，也可以被用来制备基于光电导效应的光电探测器，但由于这二者的带隙约为0.8 " }, { "name": "italic", "data": [ { "name": "text", "data": "eV" } ] }, { "name": "text", "data": "，相比于零带隙的石墨烯而言光生电子-空穴对的激发更加困难，所以响应度很低。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.7" } ], "title": [ { "name": "text", "data": "其他" } ], "level": "2", "id": "s2g" } }, { "name": "p", "data": [ { "name": "text", "data": "除上述器件结构外，研究者们还制备出一些其他类型的光电探测器，为光电探测器的发展拓宽了道路。" }, { "name": "italic", "data": [ { "name": "text", "data": "Pataniya" } ] }, { "name": "text", "data": "等利用电泳沉积技术制备出一种基于二硫化钨/石墨烯异质结结构，它可用于柔性、大面积、高灵敏度的光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图20", "type": "fig", "rid": "F20", "data": [ { "name": "text", "data": "图20" } ] } }, { "name": "text", "data": "所示，该二硫化钨/石墨烯光电探测器制备过程兼具节能与环保的优点，并且在390~1 080 " }, { "name": "italic", "data": [ { "name": "text", "data": "nm" } ] }, { "name": "text", "data": "的宽光谱范围内表现出良好的光响应。此外，该器件的光响应度达0.439 " }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，比探测率为1.41×10" }, { "name": "sup", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "Jones" } ] }, { "name": "text", "data": "。通过结构优化其外部量子效率更是达到了81.39%。该探测器的响应时间为2.1 " }, { "name": "italic", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "，比之前的报道要短很多。在经过500多次弯曲形变后，光电探测器仍然能够维持良好的性能，表现出优异的柔性特性。" } ] }, { "name": "fig", "data": { "id": "F20", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图20" } ], "title": [ { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": ")~(" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": ")二硫化钨/石墨烯异质结光电探测器制作工艺示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 20" } ], "title": [ { "name": "text", "data": "(a)-(g)Schematic diagram of manufacturing process of WS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " /graphene heterojunction photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724976&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724979&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724978&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "我们总结了以上不同响应机制制备的石墨烯光电器件的性能参数，如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同响应机制对应器件的性能指标" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Performance indicators of devices corresponding to different response mechanisms" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "响应机制" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "器件" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "波段" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "响应度" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "引用" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "4", "align": "center", "data": [ { "name": "text", "data": "光伏效应" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "石墨烯-金属pn结" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 550 nm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "6.1 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": 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"name": "text", "data": "石墨烯/Ta" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "/石墨烯" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.3~3.2 μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "103", "type": "bibr", "rid": "R103", "data": [ { "name": "text", "data": "103" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "石墨烯-正硅酸乙酯-锑化铟" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3~5 μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "14.9 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "colspan": "1", "rowspan": "2", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "光电导效应" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "石墨烯-CdS纳米线" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "White light" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.62~276 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "111", "type": "bibr", "rid": "R111", "data": [ { "name": "text", "data": "111" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "石墨烯-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶Zn" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "200~300 nm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.05 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "113", "type": "bibr", "rid": "R113", "data": [ { "name": "text", "data": "113" } ] } }, { "name": "text", "data": "]" } ] } ] ], "foot": [] } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "目前存在的挑战及未来展望" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "本文简要地总结了基于不同响应机制的石墨烯基光电探测器的研究现状和进展，并着重讨论了六种不同石墨烯基光电探测器的响应机制及应用。在过去近二十年里，基于石墨烯光电探测器的结构设计、制备工艺及性能进展迅速，这些发展为未来光电器件广泛应用于各个领域提供了更多的可能性和新的发展路线。但石墨烯基光电探测器的制备和应用仍存在一定的局限性，例如单层石墨烯的吸收率过低，因此限制了器件的小型化，但双层及更厚的石墨烯的迁移率则较低，并且多层石墨烯对于入射光波长大于可见光波段的吸收能力也非常有限。此外，由于基于光栅控效应的石墨烯基光电探测器仅在可见光到中红外波段有效，因此为实现高响应度、大增益的石墨烯基光电探测器往往需要设计低维复合或异质结构。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过对六种响应机制对石墨烯基光电探测器性能影响方面的分析和展望，我们不难看到，在实际开发过程中利用好这些机制仍具有一定的挑战。(1)基于光伏效应的石墨烯光电探测器由于其响应机制简单，制备工艺和成本较低，可广泛应用于一些造价成本不高、精度要求较低以及有大规模制备需求的器件中，但无法满足精度更高需求的进一步开发和应用。(2)光热电效应下的石墨烯光电探测器由于当前研究多从晶格热梯度产生温差进而产生电势差的角度入手来提升响应度，因此基于该机理来提升器件性能的方法对加工工艺提出了更高的要求。 (3)等离子体辅助机制下的石墨烯光电探测器尽管能探测到远红外、太赫兹波段的入射光，且响应度可维持在一个相对较高的水平，但是其可探测波段单一，且只能在石墨烯表面周期性结构的共振波段工作，因此不适合应用于宽波段探测。并且器件加工成本高，限制了其在工业制备领域的发展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "114", "type": "bibr", "rid": "R114", "data": [ { "name": "text", "data": "114" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "118", "type": "bibr", "rid": "R118", "data": [ { "name": "text", "data": "118" } ] } } ], "rid": [ "R114", "R115", "R116", "R117", "R118" ], "text": "114-118", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。(4)光栅控效应下的石墨烯光电探测器可以通过掺杂来提高响应度，但掺杂会造成响应速度降低，并且由于每次掺杂的量子点数目有限，导致基于该效应下的石墨烯光电探测器无法长时间工作。(5)光辐射热效应下的石墨烯光电探测器对其具体理论机理尚不明确，器件的响应度相较于其他效应下的光电探测器响应度较低。(6)在长波段范围内，光电导效应需要和周期性结构耦合来完成对入射光的探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "119", "type": "bibr", "rid": "R119", "data": [ { "name": "text", "data": "119" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "120", "type": "bibr", "rid": "R120", "data": [ { "name": "text", "data": "120" } ] } } ], "rid": [ "R119", "R120" ], "text": "119-120", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在短波段方面，无论是石墨烯还是其他二维材料，响应度均距离工业化应用需求有较大差距。比如，以Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "∶Zn为衬底的石墨烯基光电探测器在深紫外波段响应度只有1.05 A· W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "119", "type": "bibr", "rid": "R119", "data": [ { "name": "text", "data": "119" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，以MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为沟道材料的光电导效应光电探测器在可见光波段最大不超过7.5 mA· W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "121", "type": "bibr", "rid": "R121", "data": [ { "name": "text", "data": "121" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；相比之下，同样基于光电导机制，相同的入射光波段ZnO纳米线沟道响应度可以达到1.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " A· W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "122", "type": "bibr", "rid": "R122", "data": [ { "name": "text", "data": "122" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",Si纳米线沟道响应度可以达到10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " A· W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "123", "type": "bibr", "rid": "R123", "data": [ { "name": "text", "data": "123" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "其次，除上述问题外，石墨烯材料也面临其他新型二维材料的挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "124", "type": "bibr", "rid": "R124", "data": [ { "name": "text", "data": "124" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "126", "type": "bibr", "rid": "R126", "data": [ { "name": "text", "data": "126" } ] } } ], "rid": [ "R124", "R125", "R126" ], "text": "124-126", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如金属硫系纳米片，以MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为代表的一些金属硫系化合物是半导体，其带隙取决于其层数，对特定波长具有更高的光吸收度，并且比石墨烯具有更好的波长选择性，纯金属硫系纳米片显示出比纯金属更高的光响应性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "127", "type": "bibr", "rid": "R127", "data": [ { "name": "text", "data": "127" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "128", "type": "bibr", "rid": "R128", "data": [ { "name": "text", "data": "128" } ] } } ], "rid": [ "R127", "R128" ], "text": "127-128", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，二维氧化物、氢氧化物、碳化物和氮化物晶体正受到越来越多的关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "126", "type": "bibr", "rid": "R126", "data": [ { "name": "text", "data": "126" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "129", "type": "bibr", "rid": "R129", "data": [ { "name": "text", "data": "129" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "131", "type": "bibr", "rid": "R131", "data": [ { "name": "text", "data": "131" } ] } } ], "rid": [ "R129", "R130", "R131" ], "text": "129-131", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然还面临许多挑战，但众多研究已经证明基于上述六种机制的石墨烯光电探测器在电子、机械装备、电化学和生物等领域具有巨大的应用前景" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "132", "type": "bibr", "rid": "R132", "data": [ { "name": "text", "data": "132" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "141", "type": "bibr", "rid": "R141", "data": [ { "name": "text", "data": "141" } ] } } ], "rid": [ "R132", "R133", "R134", "R135", "R136", "R137", "R138", "R139", "R140", "R141" ], "text": "132-141", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如，对于电子领域而言，基于上述六种机制开发的光电探测器的研究成果和思路还可以用于光发射器、气体传感器、光电池的开发" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "132", "type": "bibr", "rid": "R132", "data": [ { "name": "text", "data": "132" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这主要得益于石墨烯光电探测器的高响应度和高外部量子效率。在电化学领域，高稳定性的石墨烯基光电探测器被用于纳米机电系统(NEMS)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "134", "type": "bibr", "rid": "R134", "data": [ { "name": "text", "data": "134" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、DNA传感器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "135", "type": "bibr", "rid": "R135", "data": [ { "name": "text", "data": "135" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、光电化学传感器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "136", "type": "bibr", "rid": "R136", "data": [ { "name": "text", "data": "136" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和太阳能电池" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "137", "type": "bibr", "rid": "R137", "data": [ { "name": "text", "data": "137" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在生物领域，石墨烯基光电探测器也被用于荧光传感器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "138", "type": "bibr", "rid": "R138", "data": [ { "name": "text", "data": "138" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、细胞蛋白检测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "139", "type": "bibr", "rid": "R139", "data": [ { "name": "text", "data": "139" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，尤其是在光电探测器领域对于长波段入射光的探测成果已被大量地应用在生物医药方面" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "140", "type": "bibr", "rid": "R140", "data": [ { "name": "text", "data": "140" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，对其响应机制进行进一步理论探究对其他领域的发展具有非常重要的借鉴意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210359." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { 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