带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "带有非吸收窗口的高性能InGaAs/AlGaAs量子阱激光二极管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "刘", "givenname": "翠翠", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Cui-cui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "刘翠翠(1993-)，女，河北沧州人，博士，助理研究员，2020年于中国科学院半导体研究所获得博士学位，主要从事高功率半导体激光二极管、半导体器件可靠性分析等方面的研究。E-mail: sissiliu2020@163.com." ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777582&type=", "small": 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"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777599&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777604&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777607&type=" } ], "data": [ [ { "name": "text", "data": "林楠" }, { "name": "text", "data": "(1986-)，男，陕西渭南人，硕士，助理研究员，2012年于西安理工大学获得硕士学位，主要从事高功率半导体激光二极管及其组件的研究。E-mail: " }, { "name": "text", "data": "linnan@semi.ac.cn" } ] ] } ], "email": "linnan@semi.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "马", "givenname": "骁宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MA", "givenname": "Xiao-yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" }, { "rid": "aff4", "text": "4" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "zh", "text": "*E-mail: maxy@semi.ac.cn", "data": [ { "name": "text", "data": "*E-mail: maxy@semi.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "马骁宇(1963-)，男，吉林延吉人，硕士，研究员，博士生导师，1987年于吉林大学获得硕士学位，主要从事材料生长、高功率半导体激光二极管阵列及其组件的研究。E-mail: maxy@semi.ac.cn." ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777611&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777615&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777619&type=" } ], "data": [ [ { "name": "text", "data": "马骁宇" }, { "name": "text", "data": "(1963-)，男，吉林延吉人，硕士，研究员，博士生导师，1987年于吉林大学获得硕士学位，主要从事材料生长、高功率半导体激光二极管阵列及其组件的研究。E-mail: " }, { "name": "text", "data": "maxy@semi.ac.cn." } ] ] } ], "email": "maxy@semi.ac.cn.", "deceased": false }, { "name": [ { "lang": "zh", "surname": "井", "givenname": "红旗", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JING", "givenname": "Hong-qi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" }, { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "素平", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Su-ping", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" }, { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国原子能科学研究院　核物理所，北京　102413", "data": [ { "name": "text", "data": "中国原子能科学研究院　核物理所，北京　102413" } ] }, { "lang": "en", "label": "1", "text": "Institute of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413, China", "data": [ { "name": "text", "data": "Institute of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "国防科技工业抗辐照应用技术创新中心，北京　102413", "data": [ { "name": "text", "data": "国防科技工业抗辐照应用技术创新中心，北京　102413" } ] }, { "lang": "en", "label": "2", "text": "National Innovation Center of Radiation Application, Beijing 102413, China", "data": [ { "name": "text", "data": "National Innovation Center of Radiation Application, Beijing 102413, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "中国科学院半导体研究所　光电子器件国家工程中心，北京　100083", "data": [ { "name": "text", "data": "中国科学院半导体研究所　光电子器件国家工程中心，北京　100083" } ] }, { "lang": "en", "label": "3", "text": "National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China", "data": [ { "name": "text", "data": "National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "中国科学院大学，北京　100049", "data": [ { "name": "text", "data": "中国科学院大学，北京　100049" } ] }, { "lang": "en", "label": "4", "text": "University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "为了解决限制近红外单发射区InGaAs/AlGaAs量子阱半导体激光二极管失效阈值功率提升的腔面光学灾变损伤问题，研制了一种带有Si杂质诱导量子阱混杂非吸收窗口的新型激光二极管，并对其性能进行了测试分析。首先，对于带有非吸收窗口的二极管，在其谐振腔上方前后腔面附近的窗口区域覆盖50 nm Si/100 nm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层，在远离腔面的增益区域覆盖50 nm Si/100 nm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层，并采用875 ℃/90 s快速热处理工艺促进Si杂质扩散诱导量子阱混杂并去除非辐射复合中心。然后，基于相同外延结构、相同流片工艺制备了无非吸收窗口的激光二极管作对照组。测试结果显示，带有非吸收窗口的新型激光二极管平均峰值输出功率提升约33.6%，平均峰值输出电流提升约50.4%，腔面光学灾变损伤的发生概率和破坏程度均明显降低，且其阈值电流、斜率效率及半高全宽等特性也无任何退化。该研究证明，采用Si杂质诱导量子阱混杂技术制备的非吸收窗口，对近红外单发射区InGaAs/AlGaAs量子阱半导体激光二极管腔面光学灾变损伤有明显的抑制效果。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In order to solve catastrophic optical mirror damage(COMD), the problem of limiting the output power of near-infrared single-emitting InGaAs/AlGaAs quantum well semiconductor laser diodes(LD), a new-typed LD with a non-absorption window(NAW) based on Si impurity induced quantum well intermixing(QWI) technology was designed and fabricated, and its performance is tested and analyzed. Firstly, for the diode with NAW, a 50 nm Si/100 nm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " composite dielectric layer is covered in the window region near the front and rear cavity surfaces above the cavity, and a 50 nm Si/100 nm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " composite dielectric layer is covered in the gain region far away from the cavity surface. A rapid thermal annealing(RTA) process of 875 ℃/90 s is used to promote Si impurity diffusion induces QWI and remove non-radiation recombination centers. Then, based on the same epitaxial structure and preparation process, the traditional LD without NAW is prepared as the control group. Finally, the test results show that the catastrophic failure threshold power and the catastrophic failure threshold current of the new LD with NAW increase about 33.6% and 50.4%, respectively, and the occurrence probability and damage degree of COMD of the new LD are significantly reduced. Moreover, there is no degradation of the characteristics of threshold current, slope efficiency and full width half maximum of the new LD. This study proves that the NAW prepared by Si impurity induced QWI technology has a significant suppression effect on the COMD of near-infrared single-emitting InGaAs/AlGaAs quantum well semiconductor LD." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "半导体激光二极管" } ], [ { "name": "text", "data": "腔面光学灾变损伤" } ], [ { "name": "text", "data": "量子阱混杂" } ], [ { "name": "text", "data": "非吸收窗口" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "semiconductor lasers" } ], [ { "name": "text", "data": "catastrophic optical mirror damage" } ], [ { "name": "text", "data": "quantum well intermixing" } ], [ { "name": "text", "data": "non-absorption window" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "GaAs基高功率半导体激光器具有体积小、重量轻、散热好、光功率密度高等优点，可作为直接光源或固体激光器、光纤激光器的泵浦源使用，在医疗、工业、军事等领域有良好的应用前景" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但这些应用场景都对GaAs基高功率半导体二极管的输出功率有更高的需求。然而，半导体激光二极管输出功率的提升普遍受到光学灾变损伤(Catastrophic optical damage,COD)限制。对于InGaAs/AlGaAs量子阱半导体激光二极管，沿其谐振腔方向其光场强度在前腔面处达到峰值。而在实际情况下，因腔面氧化、界面态等因素会导致非辐射复合增加，因而在激光二极管腔面，尤其是前腔面处，更容易发生光学灾变损伤" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R3", "R4" ], "text": "3-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此也被称为腔面光学灾变损伤，即COMD。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "针对COMD的诱发机制，可通过降低腔面光吸收、抑制腔面非辐射复合、减少腔面处光子密度等手段来缓解COMD问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中，量子阱混杂是一种降低腔面光吸收的途径，可通过快速热退火诱导无序化(RTA)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、杂质诱导无序化(Impurity induced disordering,IID)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、无杂质空位诱导无序化(Impurity-free vacancy disordering,IFVD)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等方法实现。其中，IID相比其他方法操作更简单、成本更低、诱导效果更显著，因而受到广泛关注。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "从20世纪60年代开始，出现了针对COMD及其解决方法的研究并持续至今。COMD现象在1966年首次被Cooper在GaAs同质结半导体激光二极管上观测到" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。1977年，Chinone基于AlGaAs/GaAs双异质结半导体激光二极管，利用扫描电子显微镜(Scanning electron microscope,SEM)观测，认定导致COMD的关键因素是腔面处更高的功率密度和腔表面氧化所产生的强烈的非辐射复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。1986年，Deppe" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于AlGaAs/GaAs量子阱激光二极管，利用280 nm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜和90 nm Si" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "N" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "薄膜的IFVD作用，结合875 ℃/10 h热处理实现了约90 meV带隙展宽。1987年，Mei研究发现，Al元素的扩散系数会随Si杂质浓度的增加而上升，并得出Si杂质能有效促进AlAs/GaAs超晶格结构量子阱混杂的结论" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2013年，Morita采用IFVD技术在915 nm宽条形半导体激光二极管上制备了非吸收窗口，提升了该器件在20 ℃恒温测试下的输出功率以及长时间工作的稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年，Mengya" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在Si基InAs/GaAs量子点激光二极管选区波长调整方案研究中发现，经相同条件的热处理，被SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介质膜覆盖的区域波长蓝移达40 nm，被TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介质膜覆盖的区域波长蓝移仅3.4 nm。证明了SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介质膜能促进该结构的量子阱混杂，而TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介质膜则有抑制量子阱混杂的作用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文选用Si杂质作为量子阱混杂技术的诱导源，设计并制备了带有非吸收窗口的新型InGaAs/AlGaAs量子阱半导体激光二极管，并对其光电性能进行测试分析。选择Si杂质作诱导源的原因是Si常作为InGaAs/AlGaAs量子阱半导体激光二极管芯片外延过程中使用的施主杂质，容易获得且不易造成污染；同时，p型GaAs常采用C掺杂，引入Si杂质可部分中和C掺杂，基于载流子复合效应在窗口微区也形成低浓度载流子注入区，有助于减少窗口区载流子非辐射复合产生的热量，进一步抑制COMD现象。但是，由于IID会引入杂质诱导缺陷产生，再进行长时间热处理可能会引起材料内部应力释放，进而影响材料表面及内部的晶体质量。与之相比，RTA技术热处理时间较短，对于材料内部晶体质量影响较小，因此本文选择RTA技术来激活杂质并促进其扩散。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "采用金属氧化物化学气相沉积(Metal organic chemical vapor deposition,MOCVD)设备制备了InGaAs/AlGaAs量子阱半导体激光二极管的初级外延片。外延生长时的载气为氢气(H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ");Ⅲ族源为三甲基铟(TMIn)、三甲基镓(TMGa)和三甲基铝(TMAl);V族源为砷烷(AsH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ");P型和N型掺杂剂分别源于四氯化碳(CCl" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")和硅烷(SiH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")。设备反应室内温度为550~700 ℃，压力为5 000 Pa，衬底选用(100)偏[111]A15°的n-GaAs，包含外延片信息的器件结构示意图及初级外延片的光致发光谱如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "InGaAs/AlGaAs量子阱激光二极管的外延结构(a)和光致发光谱(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Epitaxial structure of InGaAs/AlGaAs quantum well laser diode(a) and photoluminescenc spectrum(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777624&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777634&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777629&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "仿真计算" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "因为GaAs表面的压应力有助于更多Ga空位缺陷的产生" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，同时促进Si向结构内部扩散，进而产生更强烈的量子阱混杂效果。因此，首先研究了不同介质层对GaAs界面产生的应力作用。实际初级外延片的GaAs衬底层厚度为450 μm，外延层总厚度约4.5 μm，且每层均含高比例的Ga及As元素。为了避免相对误差过大引起的计算错误，在模拟中以厚度为25 μm、长度为100 μm的GaAs代替激光二极管外延片。模拟中所使用的物理参数如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，模拟结果如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "COMSOL模拟的带有Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(a)、Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(b)介质层的外延片退火后的形变。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Simulation of annealing deformation of epitaxial wafers with Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(a) and Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(b) dielectric layer by COMSOL" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777640&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777651&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777644&type=" } ] } }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "相关材料的杨氏模量、泊松比、密度及热膨胀系数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Young's modulus, Poisson's ratio, density and coefficient of thermal expansion of related materials" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "介质材料" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "杨氏模量/Pa" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "泊松比" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "密度/(kg·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "热膨胀系数/K" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "8.50E10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.31" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5 500" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "6.40E-06" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "Si" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.77E11" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.29" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2 328" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2.60E-06" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "data": [ { "name": "text", "data": "SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "7.31E10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.17" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2 203" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5.50E-07" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "left", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "7.50E10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.22" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4 200" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "9.90E-06" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了更明显地展示形变趋势，" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中展示的是放大20倍后的形变量。同时，在模拟中将介质层的厚度相比于实际情况放大了100倍，" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "中样品的介质层为5 μm Si/10 μm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "中样品的介质层为5 μm Si/10 μm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。假设样品升温至875 ℃后产生稳定形变，由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "可见，GaAs表面因受Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层带来的压应力而产生明显弯曲，这种形变会导致在表面GaAs层内形成更多的Ga空位缺陷。又因为在该类量子阱体系内，Si元素及Al元素的扩散程度与Ga空位浓度正相关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可知Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层有利于促进量子阱混杂的进行。而在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层拉伸应力作用下，Si形变带来的压应力被减弱，GaAs表面Ga空位缺陷的产生较少，进而减缓了量子阱区域的元素互扩散，因此Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层对量子阱混杂有抑制作用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基于菲克第二定律及其叠加原理，可推导在原子单向扩散过程中InGaAs/AlGaAs量子阱结构组分及禁带宽度随时间和空间变化的方程。以量子阱的中心位置为" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "轴原点，设量子阱宽度为2" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ",Ⅲ族及Ⅴ族原子的扩散系数" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "近似独立且各向同性，且量子阱界面上各组分的初始浓度呈阶梯分布。当量子阱中Al元素沿一维" }, { "name": "italic", "data": [ { "name": "text", "data": "Z" } ] }, { "name": "text", "data": "方向扩散一定长度" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "=" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777656&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777666&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777661&type=" } } } ] }, { "name": "text", "data": "后，各组分原子浓度" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "随时间" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "的变化遵从菲克第二定律方程:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777670&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777675&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777678&type=" } } } ], "id": "DF1" } }, { "name": "text", "data": "假设量子阱、垒中Al元素浓度分别为" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，如下所示:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777682&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777684&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777688&type=" } } } ], "id": "DF2" } }, { "name": "text", "data": "联合公式(1)、(2)可推导出该结构中各位点Al元素的浓度:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777692&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777694&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777695&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "同时，In" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x-y" } ] } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As四元化合物半导体的禁带宽度可通过公式(4)计算" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777697&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777699&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777701&type=" } } } ], "id": "DF4" } }, { "name": "text", "data": "本文所用的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.267" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.733" } ] }, { "name": "text", "data": "As/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.255" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.745" } ] }, { "name": "text", "data": "As量子阱外延片，Al元素将不断从浓度较高的区域向中心量子阱区扩散。假设Al元素从势垒区向阱区的扩散长度" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "分别为0,1,2,3 nm，联合公式(1)~(4)可计算出Al元素在量子阱中的分布和对应的能带结构，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。随着Al元素的扩散，量子阱区域内Al元素不断增加，使其从原始的三元化合物InGaAs逐渐变成四元化合物InAlGaAs，量子阱区域禁带宽度随之变化。结合公式(5)所示波长和禁带宽度之间的关系:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777703&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777705&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777707&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "是波长，" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "是普朗克常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "是光速，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "是量子阱禁带宽度。公式(5)结合" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "可见，随量子阱带隙变大，激光器发光波长变短，即发生蓝移。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "Al扩散不同距离后，InGaAs/AlGaAs量子阱内Al元素的浓度(a)和量子阱的带隙结构(b)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "Composition concentration(a) and band gap(b) of InGaAs/AlGaAs quantum well after Al diffusion at different distances" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777709&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777712&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777711&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "样品表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "将同一片激光二极管初级外延片表面划分为4个区域，一区域生长50 nm Si/100 nm SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层，二区域生长50 nm Si/100 nm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层，三区域生长50 nm Si单介质层，四区域生长100 nm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "单介质层。经875 ℃/90 s RTA处理，测试这4个区域的光致发光谱，并与原始初级外延片的光致发光谱对比。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示，带有Si单介质层及带有Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层的区域都产生了较大的波长蓝移。其中，带有Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层区域的中心波长移至约935 nm，与原始外延片中心波长的蓝移差约67 nm。而带有TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "单介质层及带有Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层区域的波长蓝移都受到明显抑制，与带有Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介质层区域的波长蓝移差约60 nm。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "激光二极管外延片不同区域覆盖的介质层(a)及对应区域的光致发光谱(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "The dielectric layer covered different region of laser diode epitaxial wafer(a) and photoluminescenc spectra of different regions(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777715&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777719&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777717&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "至此，应力应变的软件模拟结果、杂质扩散的数学计算结果，以及实验测试结果趋于一致，都显示出Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层与单独TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层均可起到较好的抑制波长蓝移效果，而Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层也和单独Si层一样可起到较好的促进波长蓝移效果。同时，与生长单层介质层相比，生长Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "或Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层有利于减少光刻步骤、降低流片难度，也能在RTA过程中更好地保护外延片表层。综合考虑后，分别用Si/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层、Si/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "组合介质层来实现促进、抑制量子阱混杂的目标。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "优化后的流片工艺如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示:(a)在样品表面利用MOCVD外延生长一层50 nm厚的Si层；(b)在样品表面利用等离子体增强化学气相沉积(Plasma enhanced chemical vapor deposition, PECVD)设备外延生长一层100 nm厚SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层，然后按照芯片出光面的条宽刻蚀出100 μm的条形区域；(c)刻蚀掉非窗口区的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层；(d)在样品表面利用Ebeam淀积一层100 nm厚TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ";(e)刻蚀掉窗口区域上方的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ";(f)在带有介质层的外延片上面覆盖GaAs盖片，下面垫Si片，并进行875 ℃/90 s快速热处理；(g)去除所有介质层；(h)将外延片解理、镀膜，并封装成器件。同时，在激光二极管前腔面镀透过率高于95%的增透膜，后腔面镀反射率高于95%的高反膜，以实现高效率的前腔面激光输出。该激光器的光发射区宽度为100 μm，谐振腔腔长为4 500 μm，量子阱宽度为7.4 nm。该非吸收窗口区域在激光二极管谐振腔前后腔面处，长度均为50 μm。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "带有非吸收窗口的激光二极管流片流程" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "The tape-out process of laser diode with non-absorption window" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777721&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777727&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777723&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "基于Si杂质诱导量子阱混杂技术，成功制备了4只带有非吸收窗口的新型半导体激光二极管(以下简称新型二极管)。同时，也在相同流片工艺下制备了4只不带非吸收窗口的常规半导体激光二极管(以下简称常规二极管)，这两种二极管除去非吸收窗口其他规格完全一样。不带非吸收窗口的常规二极管编号为:Normal-1、Normal-2、Normal-3、Normal-4，带有非吸收窗口的新型二极管编号为:New-1、New-2、New-3、New-4。分别测试了两种二极管的功率-电流-电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": ")曲线、激光光谱和电致发光图像特性。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "功率-电流-电压输出曲线" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "分别展示了两种二极管的" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": "测试曲线。对比" }, { "name": "xref", "data": { "text": "图6(a)、(b)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)、(b)" } ] } }, { "name": "text", "data": "可知，4只常规二极管的平均峰值电流为12.3 A,4只新型二极管的平均峰值电流为18.5 A，比常规二极管提高了50.4%;4只常规二极管的平均峰值输出功率为10.5 W,4只新型二极管的平均峰值输出功率为14.1 W，比常规二极管提高了33.6%左右，可见新型二极管的电学性能显著提高。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "常规二极管(a)和新型二极管(b)的" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": "特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "The " }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": " characteristics of normal lasers(a) and new lasers(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777730&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777735&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777732&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "然而，新型二极管的偏置电压在大于1.8 V时出现了突变性升高。分析这个现象的原因是Si扩散进入GaAs层上表面后改变了其掺杂特性，当工作电压达到一定值后的COMD瞬间，电流增大、产热也骤增，故引发了电压的瞬间抖动。并且4只新型二极管" }, { "name": "italic", "data": [ { "name": "text", "data": "P-I-V" } ] }, { "name": "text", "data": "曲线的统一性劣于4只常规二极管，因此未来需要对该工艺下新型二极管的稳定性和可靠性进行更深入全面的研究。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "激光光谱" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "为两种二极管的实测激光光谱，对比光谱的高度可以看出，新型二极管的峰值光强显著提高，这是因为非吸收窗口结构改善了二极管腔面处的界面态，降低了腔面处光吸收，也减少了热生成导致的半导体材料带隙变窄所引起的光吸收；同时，Si杂质在GaAs中具有n型掺杂特性，再结合热处理工艺，可复合GaAs中的部分p型载流子，降低二极管腔面处的载流子注入浓度。因此，利用Si杂质诱导量子阱混杂技术制备的非吸收窗口可以在降低腔表面光吸收产热的同时，降低载流子的非辐射复合，故可进一步提高二极管的光输出功率。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "常规二极管(a)和新型二极管(b)的激光光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "The laser spectra of normal lasers(a) and new lasers(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777739&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777743&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777742&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "同时，常规二极管光谱的对称性较差，杂峰数量也更多，甚至出现了比中心波长更强的杂峰；而新型二极管的光谱对称性较好，且大都只有一个较强的主峰。这说明制备非吸收窗口的过程中也消除了部分陷阱能级，降低了由陷阱能级所激发的其他波长杂峰。然而，新型二极管光谱主峰左侧大都会有一个较弱的杂峰，这可能是由非吸收窗口区域量子阱混杂导致的带隙展宽和波长蓝移所致。不过，这也体现出利用该技术可以很方便地可控实现单一芯片上的光子集成。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "电致发光图像" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "进行电致发光图像测试时，是利用探针对样品进行加电，电流约为200~300 mA，大小在器件的阈值电流以下，并记录电致发光图像。经过筛选、磨抛、测试等过程，最终得到4只常规二极管及4只新型二极管的电致发光图像结果，如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。该图像经显微镜放大50倍，完整展示了激光器前腔面附近的电致发光图像。图中，红色区域展示的是加电之后发光的区域，红色区域内部的黑色区域则是由于发生COD而不能电致发光的区域。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "常规二极管(a)和新型二极管(b)的电致发光图像(50 Px)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "The electroluminescence images of normal lasers(a) and new lasers(b)(50 Px)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777747&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777751&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777749&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "xref", "data": { "text": "图8(a)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)" } ] } }, { "name": "text", "data": "可见，4只常规二极管全部在前腔面处发生了COMD，并最终导致了器件失效；而由" }, { "name": "xref", "data": { "text": "图8(b)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(b)" } ] } }, { "name": "text", "data": "可见，4只新型二极管中只有2只在前腔面处发生了COMD,1只在谐振腔内其他地方发生了COD，还有1只未检测到COD现象。由此可见，在新型二极管腔面处，尤其是前腔面处，COMD发生概率明显降低；并且COMD也仅破坏了新型二极管谐振腔内小块区域，从发生COMD损伤的源头向谐振腔内部的延伸受到了明显抑制，这表明非吸收窗口能显著减少COMD的破坏程度。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步提高InGaAs/AlGaAs高功率量子阱半导体激光二极管峰值功率，针对COMD这一限制其输出功率提升的关键问题，本文设计了一种利用Si杂质诱导量子阱混杂方法制备非吸收窗口的技术方案，并在相同的工艺条件下同时制备了不带有非吸收窗口的常规二极管以及带有非吸收窗口的新型二极管。两者的电学和光学输出特性显示，新型二极管的COMD峰值输出功率和峰值输出电流相比常规二极管分别增加了33.6%和50.4%；电致发光图像测试结果显示，新型二极管COMD发生概率和损伤程度均明显降低。综合多种测试结果可知，通过Si杂质诱导量子阱混杂制备非吸收窗口，可显著改善InGaAs/AlGaAs高功率量子阱半导体激光二极管COMD问题。但是，新型二极管的稳定性仍存疑问，其长期应用的可靠性还需要进一步研究。同时，该研究也证明量子阱混杂技术可应用于光子集成，未来在光子集成领域具有广泛的应用前景。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210306." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "胡雪莹" }, { "name": "text", "data": ", " }, { "name": "text", "data": "董海亮" }, { "name": "text", "data": ", " }, { "name": "text", "data": "贾志刚" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". 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