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1.Institute of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413, China
2.National Innovation Center of Radiation Application, Beijing 102413, China
3.National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4.University of Chinese Academy of Sciences, Beijing 100049, China
Published:2022-01,
Received:22 September 2021,
Revised:11 October 2021,
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Cui-cui LIU, Nan LIN, Xiao-yu MA, et al. High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window. [J]. Chinese Journal of Luminescence 43(1):110-118(2022)
Cui-cui LIU, Nan LIN, Xiao-yu MA, et al. High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window. [J]. Chinese Journal of Luminescence 43(1):110-118(2022) DOI: 10.37188/CJL.20210306.
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