Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er³⁺ Doping Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂对ZnO/GaN发光二极管电致发光性能的调控" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Regulation of Electroluminescent Properties of ZnO/GaN Light Emitting Diodes by Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " Doping" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "刘", "givenname": "威", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Wei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "刘威(1993-)，男，湖北孝感人，博士研究生，2017年于武汉科技大学获得硕士学位，主要从事氧化锌微腔电致发光器件设计与制备的研究。E-mail: liu12345wei@sina.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351357&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351358&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351361&type=" } ], "data": [ [ { "name": "text", "data": "刘威" }, { "name": "text", "data": "(1993-)，男，湖北孝感人，博士研究生，2017年于武汉科技大学获得硕士学位，主要从事氧化锌微腔电致发光器件设计与制备的研究。E-mail: " }, { "name": "text", "data": "liu12345wei@sina.com" } ] ] } ], "email": "liu12345wei@sina.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "竹新", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Zhu-xin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "俊洁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jun-jie", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "石", "givenname": "增良", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Zeng-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "zh", "text": "Corresponding Author, E-mail: zlshi@seu.edu.cn", "data": [ { "name": "text", "data": "Corresponding Author, E-mail: zlshi@seu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "石增良(1979-)，男，山东临沂人，博士，讲师，2008年于吉林大学获得博士学位，主要从事纳米光电功能材料与器件与生物传感技术的研究。E-mail: zlshi@seu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351364&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351367&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351374&type=" } ], "data": [ [ { "name": "text", "data": "石增良" }, { "name": "text", "data": "(1979-)，男，山东临沂人，博士，讲师，2008年于吉林大学获得博士学位，主要从事纳米光电功能材料与器件与生物传感技术的研究。E-mail: " }, { "name": "text", "data": "zlshi@seu.edu.cn" } ] ] } ], "email": "zlshi@seu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "东南大学生物科学与医学工程学院 生物电子学国家重点实验, 江苏 南京 　 210096", "data": [ { "name": "text", "data": "东南大学生物科学与医学工程学院 生物电子学国家重点实验, 江苏 南京 　 210096" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China", "data": [ { "name": "text", "data": "State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "采用水热法制备了Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂的ZnO纳米棒阵列，通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明，掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变，Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "被均匀地掺杂至ZnO纳米棒中，并未发现形成Er" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ";掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少，其可见光占比减少归因于Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "填补了一部分锌空位缺陷，同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长，表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管，与未掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的样品相比，其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " doped ZnO nanorod arrays were prepared by hydrothermal method, the morphology and luminescence properties were characterized by field emission scanning electron microscopy, X-ray single crystal diffraction, transmission electron microscopy and micro spectrometer. The experimental results show that Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " is successfully and uniformly doped into ZnO nanorods, and the formation of Er" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " is not found. After Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " doped, the photoluminescence spectrum shows a broad band peaked at 400 nm. With the increasing of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " concentration, the proportion of the blue part decreases, which indicates that Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " fills part of the Zn vacancy defects and suppresses part of the O vacancy defects. At the same time, combined with the fluorescence lifetime spectrum, it can also be found that the lifetime of the radiative part is prolonged, which indicates that the fluorescence radiation efficiency is improved. Finally, ZnO nanorod contented Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " with a mass concentration of 30% was selected to fabricate ZnO/GaN light-emitting diodes. Compared with the samples without Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ", the electroluminescence intensity of ZnO/GaN light-emitting diodes increased by five times. This paper provides a simple and feasible method to improve the performance of ZnO based electroluminescent devices." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "ZnO纳米棒阵列" } ], [ { "name": "text", "data": "Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂" } ], [ { "name": "text", "data": "缺陷调控" } ], [ { "name": "text", "data": "电致发光器件" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "ZnO nanorod array" } ], [ { "name": "text", "data": "Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " doping" } ], [ { "name": "text", "data": "defect control" } ], [ { "name": "text", "data": "electroluminescence device" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "金属元素是半导体工艺中常见的掺杂元素" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，通常会根据功能性需求掺杂一些不同的金属元素。以ZnO为例，掺杂Ga" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "及Al" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等元素可调控其禁带宽度，掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Yb" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "及Ho" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等稀土元素可获得可见或者红外发光，从而拓展ZnO的发光范围。ZnO是一种非极性晶体，极易形成n型掺杂，最高载流子浓度可达到10" }, { "name": "sup", "data": [ { "name": "text", "data": "21" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ";但由于无法有效解决掺杂受主的稳定性问题，稳定以及高质量的p型掺杂工艺却十分困难" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。ZnO在掺杂Ga和Er等金属元素后，由于掺杂元素和Zn元素的电荷不匹配，很容易形成游离电荷，以充当半导体内部可移动的载流子。因此，掺杂金属元素不仅是拓宽ZnO禁带宽度的方法，同时也是提高ZnO电导率的有效方法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "提高电致发光器件中ZnO本征发光效率是ZnO基紫外发射器件的重要目标。提高器件中ZnO本征发光效率的方法主要有引入电子阻挡层将器件中的载流子局域至ZnO侧" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、等离激元共振增强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R19", "R20", "R21" ], "text": "19-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等，但是这些方法都需引入外部结构或者外部能量场耦合等，而不是从ZnO自身寻求提高发光效率的方法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过水热法制备了Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂ZnO(ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ")纳米棒阵列，未产生Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的可见发光，不会影响ZnO纳米棒的本征发光，但可有效地提高ZnO纳米棒的电导率。ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒基电致发光器件的本征发光强度较未掺杂时提高了5倍，其开启电压也低于未掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的ZnO纳米棒基电致发光器件。这些结果为ZnO基紫外电致发光器件的性能改善提供了一种可靠的方法。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　样品制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "通过水热法制备ZnO纳米棒和ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒，并构建异质结电致发光器件。其具体制备流程如下:(1)使用丙酮和酒精将硅片洗净，用氮气吹干备用;(2)利用磁控溅射在备用的硅片上沉积ZnO种子层，沉积时间为30 min，其中氩气和氧气的气体流量比为50∶5，溅射功率为100 mW;(3)配制浓度均为50 mmol/mL的六次甲基四氨和醋酸锌溶液，在制备ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒过程中，需在该步骤中加入5,10,15,20 mmol/mL的硝酸铒溶液(添加质量浓度为10%、20%、30%和40%)，所有的溶剂均为水;(4)将配好的待反应溶液以及溅射好种子层的硅片放入四氟乙烯反应釜中，在90 ℃下反应9 h;(5)取出反应好的硅片样品，用去离子水洗净后备用。电致发光器件的制备具体如下:(1)将Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "∶ZnO纳米棒置于GaN的外延片上，放置于旋涂机上，滴入8%的PMMA苯甲醚溶液，其中旋涂参数为600 r/min、时间为6 s,3 000 r/min、时间为30 s;(2)将旋涂后的外延片放置于加热台上100 ℃烘干5 min，使PMMA薄膜成型，反应完成后将外延片放入样品盒内保存备用;(3)利用反应离子刻蚀将PMMA刻蚀至ZnO微米棒或者纳米棒露出;(4)将刻蚀后的外延片放入磁控溅射反应室内，制备Ag电极，氩气流量为50 mL/min，溅射时间2 min;(5)待反应舱室冷却至室温后将器件取出。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　样品表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "利用荷兰公司的Ultra Plus型场发射扫描电子显微镜、ThermoFisher Scientific公司的EscaLab250Xi的能谱仪和日立公司JP-2000透射电子显微镜进行形貌结构表征，采用显微荧光系统进行荧光及荧光寿命分析，显微荧光系统包括飞秒激光系统(脉宽100 fs、 重复频率1 000 Hz)、成像相机、光谱仪(美国普林斯顿仪器公司 Acton SP2500i型光学多通道分析仪，600刻线光栅)、条纹相机(德国Optronis GmbH SC-10，时间分辨率小于2 ps)，电学测量部分采用美国Instec公司的变温探针台和是德科技公司B2961A程控恒流源作为电流注入装置，显微荧光系统作为接收装置。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "通过水热法引入Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "制备ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒阵列，其制备过程及结构示意图如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "在ZnO纳米线阵列生长的过程中掺杂至ZnO纳米线内部。为了验证Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的存在形式以及对ZnO纳米棒的影响，通过场发射扫描电镜(SEM)、透射电镜(TEM)以及光电子能谱仪(XPS)分析了掺杂前后ZnO纳米棒的形貌、晶格以及元素存在形式。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒阵列制备过程及结构示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Preparation and structure of ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " nanoarrays" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351378&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351385&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351381&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了分析Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入对ZnO纳米棒中Zn和O原子电子态的影响，利用XPS对ZnO纳米棒进行了测试。结果表明Zn 2p的轨道位置随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂浓度的增加先向低能态聚集后回归高能态" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "所示。说明Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入对Zn空位缺陷有一定的填充作用，可以弥补一部分Zn原子相关的缺陷，但同时会增加一部分Zn间隙缺陷。随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的掺杂浓度增加，Zn原子回归高能态，说明过量的Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂会造成Zn相关的缺陷增多。如" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "所示，对O原子的聚集态进行分峰拟合，可以发现代表氧空位位于530 meV的特征峰和代表晶格氧的532 meV的特征峰。Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入对O原子的聚集态有很大的影响，在掺杂浓度较低时，Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "填补Zn空位缺陷同时与间隙O原子结合，造成O相关的缺陷减少，位于高能态的氧空位占比减少;随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂浓度的增加，游离的Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "会对O原子有一定的吸附作用，从而提高了缺陷氧的存在比例，造成其位于高能态的O元素占比增多，即向缺陷氧的方向转变" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": "所示，可以明显地发现位于168.52 eV的Er 4d轨道的峰位逐渐增强，从而直接证明Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "在ZnO纳米棒中的掺杂含量逐渐提高。通过XPS测试结果可知，添加质量浓度为10%、20%、30%和40%的Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的实际掺杂浓度为0.2%、0.67%、1.62%和1.77%。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同样品中不同元素的XPS图谱。(a)Zn元素;(b)O元素;(c)Er元素。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "XPS spectra of different elements in different samples. (a)Zn. (b)O. (c)Er." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351390&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351398&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351394&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示，利用SEM和EDS分析了未掺杂和Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂投料比为30%的ZnO纳米棒的形貌、元素分布和晶体结构参数。如" }, { "name": "xref", "data": { "text": "图3(a)、(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)、(b)" } ] } }, { "name": "text", "data": "所示，掺杂前后ZnO纳米棒均呈现明显的六棱柱结构，Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入并未对ZnO纳米棒的形貌产生影响，仍明显属于六方晶系。" }, { "name": "xref", "data": { "text": "图3(c)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(c)" } ] } }, { "name": "text", "data": "展示了相同样品中ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒的元素含量。从插图中可以得知，Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "已经掺杂至ZnO纳米棒中，重量比只有0.33%，原子比只有0.08%，这与XPS的结果1.62%差异较大，归因于Er元素的含量已经超出了SEM的EDS的检测极限，因此并不能做出精确判断。为此，后续用TEM对单根ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒进行了元素分布的分析。" }, { "name": "xref", "data": { "text": "图3(d)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(d)" } ] } }, { "name": "text", "data": "展示了未掺杂和ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒阵列的XRD谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，发现掺杂前后ZnO纳米棒阵列的XRD结果均与ZnO晶体的标准卡片完美吻合，其(101)衍射峰位置从36.1°变化至36.0°，同时(002)衍射峰的位置从34.3°变化至34.2°。根据布拉格方程" }, { "name": "italic", "data": [ { "name": "text", "data": "nλ" } ] }, { "name": "text", "data": "=2" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "sin" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "可得，衍射峰向低角度移动，其晶面间距" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "增大，这是因为掺入的Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的直径较Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "大(Er的原子半径为0.176 nm,Zn的为0.134 nm)。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)ZnO纳米棒阵列的SEM图;(b)ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒阵列的SEM图;(c)ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒阵列的EDS谱，插表为各元素的质量占比和原子占比;(d)Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂前后ZnO纳米棒阵列的XRD谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "(a)SEM of the ZnO nanorod array without Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". (b)SEM of the ZnO nanorod array doped with Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". (c)EDS spectra of the ZnO nanorod array with Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ", and the insert table shows the weight and atom proportion of each element. (d)XRD spectrum of the ZnO nanorod array with and without Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351402&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351407&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351404&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了更清楚地了解Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "在ZnO晶体内的掺杂形式，分析了未掺杂和Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂为30%的单根ZnO纳米棒的TEM图、高分辨透射电镜(HRTEM)图和各元素的分布图，后续的光致发光、荧光寿命以及电致发光测试也均选用相同掺杂的ZnO纳米棒。如" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "4(c)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "4(c)" } ] } }, { "name": "text", "data": "所示，ZnO纳米棒的形貌并没有因掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "发生改变。如" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "中ZnO纳米棒的HRTEM图所示，具有明显的晶格条纹，可以测得其晶格间距为0.261 nm，与ZnO的(002)面吻合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } } ], "rid": [ "R26", "R27" ], "text": "26-27", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对比" }, { "name": "xref", "data": { "text": "图4(d)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(d)" } ] } }, { "name": "text", "data": "中ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒的HRTEM图，其晶格间距为0.263 nm，晶格间距变大，这与XRD中(002)面衍射峰位置向低角度移动的结果相匹配，进一步表明Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂至ZnO的晶格中。为了进一步探究Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "在ZnO纳米棒中的分布，分析了" }, { "name": "xref", "data": { "text": "图4(c)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(c)" } ] } }, { "name": "text", "data": "中ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒的元素分布。如" }, { "name": "xref", "data": { "text": "图4(e)~(h)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(e)~(h)" } ] } }, { "name": "text", "data": "所示，可以明显地发现Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "均匀地分布于整根纳米棒，这进一步表明Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "已被掺杂至ZnO纳米棒内。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)ZnO纳米棒TEM图;(b)ZnO纳米棒HRTEM图;(c)ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒TEM图;(d)ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒HRTEM图;ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒元素分布图:(e)总谱，(f)O元素，(g)Zn元素，(h)Er元素。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "(a)TEM images of ZnO nanorods without Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". (b)HRTEM images of ZnO nanorods without Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". (c)TEM images of ZnO nanorods with Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". (d)HRTEM images of ZnO nanorods with Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". Mapping of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "∶ZnO nanowire: (e)total spectrum, (f)O, (g)Zn, (h)Er." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351411&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351421&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351415&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步了解Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂对ZnO发光性能的影响，我们分析了其归一化的光致发光光谱和荧光寿命，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的掺杂，其在400 nm附近的发光增强，而该波段的发光来源于Zn间隙缺陷的相关发光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这说明ZnO中的Zn间隙缺陷的占比增多;而且其与O缺陷相关的可见发光占比减少，说明O缺陷占比减少，在Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂投料比为30%时，其在400 nm和500 nm附近的可见发光占比均减少。如" }, { "name": "xref", "data": { "text": "图5(b)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(b)" } ] } }, { "name": "text", "data": "所示，未掺杂ZnO纳米棒的寿命符合单指数拟合，随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入，其寿命符合双指数拟合，以非辐射复合(缺陷捕获、电子转移等)为主的短寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "和以辐射复合为主的长寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂浓度的增加，" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "先增大后基本不变，同时" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "先增大后减小，说明随着Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入，其辐射复合先增强后减弱。这与缺陷有关的可见发光部分的强度先减弱后增强是一致的，与荧光发光中400 nm波段和可见发光的变化也是一致的，进一步表明Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入是通过调控ZnO的缺陷来增强其本征发光。由于纳米线的光致发光强度在同一功率的激发下其发光强度变化较小，因此可以推测Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂并不会影响其整体发光强度，但会增强其本征发光的比例。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "(a)不同Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂浓度的ZnO纳米棒的归一化光致发光谱;(b)不同Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂浓度的ZnO纳米棒的归一化荧光寿命谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "(a)Normalized photoluminescence spectra of ZnO nanorods with different concentrations of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ". (b)Normalized fluorescence lifetime spectra of ZnO nanorods with different concentrations of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351426&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351436&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351431&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "选取单根的ZnO和ZnO∶Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "纳米棒制备ZnO/GaN异质结发光二极管，系统研究了其电致发光的变化，其电致发光明场成像如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。结果表明，随着电流增大，两个器件的发光光斑均逐渐变大并且变亮，对比同一电流的两个器件，Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂后的器件具有更强的亮度。为了更加细致地分析Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂前后器件电致发光的变化，测试了其" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": "特性和电致发光光谱。如" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "所示，从" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": "曲线中可以看出，掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的器件与未掺杂的器件具有相同形状的" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": "曲线，这是因为两个器件除了ZnO纳米棒的不同，其他结构均相同。但掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的器件在相同电压下明显比未掺杂的器件具有更大的电流， Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂能有效地提高ZnO的电导率。如" }, { "name": "xref", "data": { "text": "图7(b)、(c)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)、(c)" } ] } }, { "name": "text", "data": "所示，两个器件在不同电流下均具有相似的电致发光光谱，其具有367 nm和405 nm两个发射峰。一个归因于GaN的本征发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，一个归因于ZnO的本征发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但由于电场和器件发热的影响，ZnO的电致发光发射峰与光致发光相比会有少许的红移。从图中可以明显地看出，在相同的注入电流条件下，掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的器件具有更强的电致发光强度。为了对比两个器件的强度差异，计算其电致发光谱的积分强度与注入电流的关系，如" }, { "name": "xref", "data": { "text": "图7(d)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(d)" } ] } }, { "name": "text", "data": "所示。可以看出掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "后，器件的电致发光谱积分强度随着注入电流的增加上升得更快，且在3 mA时，其强度大约是未掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "器件的5倍。综上所述，Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂是一种有效提高ZnO晶体电导率的方法，同时也是一种制备高发光效率和高亮度ZnO基发光二极管的方法，为后续ZnO基激光二极管的制备提供了有益参考。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "ZnO/GaN异质结发光二极管电致发光明场照片。未掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ":(a)0.1 mA,(b)0.5 mA,(c)1 mA,(d)2 mA,(e)3 mA;掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": ":(f)0.1 mA,(g)0.5 mA,(h)1 mA,(i)2 mA,(j)3 mA。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Bright field photo of undoped sample: (a)0.1 mA, (b)0.5 mA, (c)1 mA, (d)2 mA, (e)3 mA. Doped sample: (f)0.1 mA, (g)0.5 mA, (h)1 mA, (i)2 mA, (j)3 mA." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351441&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351448&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351446&type=" } ] } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "(a)未掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "和掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": "曲线;(b)未掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "器件的电致发光光谱随注入电流的变化;(c)掺入Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "器件的电致发光光谱随注入电流的变化;(d)两个器件的电致发光光谱积分强度随注入电流的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": " curves of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " undoped and doped devices. (b)Variation of electroluminescence spectra of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " undoped devices with injection current. (c)Electroluminescence spectra of Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " doped devices with variation injection current. (d)Integral intensity of electroluminescence spectra of two devices with variation injection current." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351452&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351462&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351457&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂对ZnO纳米棒形貌结构及发光性能的影响，并获得了更高发光效率和亮度的ZnO纳米棒基蓝紫光发光二极管。研究结果表明，掺杂前后ZnO纳米棒的形貌及晶型结构并未发生改变，且Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "成功均匀地掺杂于ZnO纳米棒上。Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入使Zn元素的电子态先向低能态转变，随Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "浓度的增加向高能态转变，说明Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的引入可以消除一部分Zn相关的缺陷;但是随着掺杂浓度的增加，Zn相关的缺陷会增多，同样O相关的缺陷也出现了相同的现象。对于异质结电致发光器件，通过分析其" }, { "name": "italic", "data": [ { "name": "text", "data": "I-V" } ] }, { "name": "text", "data": "特性发现，掺杂Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "后器件的整体电流得到提升，但器件的电致发光光谱线形并未发生明显改变，其强度提高了大约5倍，这主要归因于Er" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "掺杂可有效提高ZnO纳米棒的电导率。该工作为ZnO基紫外电致发光器件的性能改善提供了一种可靠的方法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210125." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "JACOBS I E" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MOULÉ A J" }, { "name": "text", "data": ". 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